Immersion cooling system

Abstract

This invention provides an immersion cooling system comprising a working tank, a wafer assembly, a microfluidic device, a first connecting pipe, and a first heat exchange device. The working tank includes a fluid zone. The wafer assembly is located within the fluid zone and has an inlet and an outlet. The wafer assembly includes a motherboard, a wafer, and a cap. The motherboard has a main surface substantially parallel to a vertical line. The cap is located on the motherboard. The wafer is located between the cap and the motherboard. The microfluidic device is located within the wafer assembly, with a first end connected to the inlet and a second end connected to the outlet. The first connecting pipe is located within the fluid zone, with a first end connected to the outlet. The first heat exchange device is located within the fluid zone and connected to the second end of the first connecting pipe. In this invention, the immersion cooling system achieves cooling efficiency equivalent to existing technologies by using shorter cooling pipes located within the system, thus requiring only lower pumping power.

Description

Technical Field

[0001] This invention relates to an immersion cooling system, and more particularly to an immersion cooling system having a microfluidic device. Background Technology

[0002] In existing immersion cooling systems, the element to be cooled is typically placed in a working fluid and connected to a cooling device located outside the system (or its working tank) to cool the element. Summary of the Invention

[0003] Cooling devices typically connect from the outside of the system (or its working tank) to the components to be cooled located inside the system (or its working tank). Therefore, cooling devices require relatively long connecting pipes, and consequently, consume higher pumping power to enable the system to achieve the desired cooling performance.

[0004] In view of this, some embodiments propose an immersion cooling system comprising a working tank, a wafer assembly, a microfluidic device, a first connecting pipe, and a first heat exchange device. The working tank includes a fluid zone. The wafer assembly is located within the fluid zone, having an inlet and an outlet, and includes a motherboard, a wafer, and a cap. The motherboard has a main surface substantially parallel to a vertical line. The cap is located on the motherboard. The wafer is located between the cap and the motherboard. The microfluidic device is located within the wafer assembly, with a first end connected to the inlet and a second end connected to the outlet. The first connecting pipe is located within the fluid zone, with a first end connected to the outlet. The first heat exchange device is located within the fluid zone and connected to the second end of the first connecting pipe. Attached Figure Description

[0005] Figure 1 The diagram illustrates the structure of an immersion cooling system according to some embodiments.

[0006] Figure 2 Drawing basis as follows Figure 1 A schematic diagram of the structure of a second embodiment of an immersion cooling system, specifically a portion A.

[0007] Figure 3 Drawing basis as follows Figure 1 A schematic diagram of the third embodiment of an immersion cooling system, specifically a portion A.

[0008] Figure 4 Drawing basis as follows Figure 1 A schematic diagram of the fourth embodiment of an immersion cooling system, specifically a portion A.

[0009] Figure 5 Drawing basis as follows Figure 1A schematic diagram of the fifth embodiment of an immersion cooling system, specifically a portion A.

[0010] Figure 6 Drawing basis as follows Figure 1 A schematic diagram of the sixth embodiment of an immersion cooling system, specifically a portion A.

[0011] Figure 7 Drawing basis as follows Figure 1 A schematic diagram of the structure of a seventh embodiment of an immersion cooling system, specifically a portion A.

[0012] Figure 8A The diagram illustrates a cross-sectional structure of the first connecting tube according to some embodiments.

[0013] Figure 8B The diagram illustrates a cross-sectional structure of the first connecting tube according to some embodiments.

[0014] Figure 8C The diagram illustrates a cross-sectional structure of the first connecting tube according to some embodiments.

[0015] Figure 9A The diagram illustrates a cross-sectional structural schematic of the cooling device according to some embodiments.

[0016] Figure 9B The diagram illustrates a cross-sectional structural schematic of the cooling device according to some embodiments.

[0017] Figure 9C The diagram illustrates a cross-sectional structural schematic of the cooling device according to some embodiments.

[0018] Explanation of symbols in the attached drawings:

[0019] 1: Immersion cooling system;

[0020] 10: Working slot;

[0021] 101: Liquid working fluid;

[0022] 102: Mixed gas phase fluid;

[0023] 103: Air bubbles;

[0024] 11: Microfluidic devices;

[0025] 110,110': First microfluidic tube;

[0026] 111,111': Second microfluidic tube;

[0027] 12: First connecting tube;

[0028] 120: Circulating fluid;

[0029] 121: Air bubble;

[0030] 122: Inner wall;

[0031] 123: Disturbance part of the connecting pipe;

[0032] 124: Grid;

[0033] 125: Metal particles;

[0034] 126: Fins;

[0035] 127: First mainstream tube;

[0036] 128, 128': First flow tube;

[0037] 13: First heat exchange device;

[0038] 130: partition;

[0039] 131: Heat exchange channel;

[0040] 14: Second connecting tube;

[0041] 140: Second mainstream tube;

[0042] 141,141': Secondary flow tube;

[0043] 15: Pump;

[0044] 16: Third connecting tube;

[0045] 17: Cooling device;

[0046] 170: Cooling surface;

[0047] 171: Cooling disturbance section;

[0048] 172: Grid;

[0049] 173: Metal particles;

[0050] 174: Fins;

[0051] 18: Second heat exchange device;

[0052] 180: Condenser;

[0053] 181: First condenser tube;

[0054] 182: Condensate pump;

[0055] 183: Second condenser tube;

[0056] 184: Heat exchanger;

[0057] 185: Third condenser tube;

[0058] 2: Chip device;

[0059] 20: Motherboard;

[0060] 200,200': Entry point;

[0061] 201,201': Export;

[0062] 202: Main surface;

[0063] 21: Chip;

[0064] 22: Cap;

[0065] A: Partial area;

[0066] D0, D0': Inflow direction;

[0067] D1: Stacking direction;

[0068] D2, D2': Flow direction;

[0069] L: Fluid region;

[0070] V: Steam zone;

[0071] X: The X-axis of the coordinate system;

[0072] Y: The y-axis of the coordinate system;

[0073] Z: The Z-axis of the coordinate system. Detailed Implementation

[0074] Please refer to Figure 1 , Figure 1 A schematic diagram of the immersion cooling system 1 is shown according to some embodiments. Figure 1 An immersion cooling system 1 includes a working tank 10, a wafer device 2, a microfluidic device 11, a first connecting pipe 12, and a first heat exchange device 13. The working tank 10 is adapted to contain a working fluid (described in detail later) and includes a fluid zone L and a vapor zone V. The fluid zone L contains a liquid working fluid 101, and the vapor zone V contains a mixed gaseous fluid 102 (containing the gaseous working fluid and / or doped water vapor) (described in detail later). The wafer device 2 is located within the fluid zone L and has an inlet 200 and an outlet 201 (described in detail later). The wafer device 2 includes a motherboard 20, a wafer 21, and a cap 22. The motherboard 20 has a main surface 202, which is perpendicular to a vertical line (e.g., Figure 1 The Z-direction is substantially parallel (i.e., the main surface 202 is parallel to the vertical line (e.g.) Figure 1An acute angle is formed between the wafers 21 and the Z-direction, and the acute angle is, for example, less than 45°. The wafer 21 may be one or more wafers 21, without limitation; wherein, the plurality of wafers 21 may also be, for example, a 3D stack (e.g., along a direction perpendicular to the main surface 202 (e.g., along the Z-direction)). Figure 1 The chip stack structure is formed by the stacking direction D1. A cap 22 is located on the motherboard 20 (described in detail later). The chip 21 is located between the cap 22 and the motherboard 20; for example, the cap 22 and the motherboard 20 can form a closed space to accommodate the chip 21. A microfluidic device 11 is located within the chip device 2, with its first end connected to the inlet 200 and its second end connected to the outlet 201 (described in detail later). A first connecting pipe 12 is located within the fluid region L, with its first end connected to the outlet 201 (described in detail later). The material of the first connecting pipe 12 can be metal, alloy, ceramic, plastic, rubber, or a combination of one or more of the aforementioned materials, and is not limited thereto. A first heat exchange device 13 is located within the fluid region L, and the first heat exchange device 13 is connected to the second end of the first connecting pipe 12 (described in detail later). Therefore, by connecting the chip device 2 to the microfluidic device 11 and the liquid working fluid 101, the chip device 2 can be sufficiently cooled. Furthermore, by using the first connecting pipe 12 and the first heat exchange device 13, which are also located in the fluid zone L of the working tank 10 and connected to the wafer device 2, the immersion cooling system 1 can avoid the problems caused by existing cooling devices located outside the system (such as the need for longer connecting pipes or even higher pumping power to achieve the expected cooling performance).

[0075] Please continue to refer to this. Figure 1 In some embodiments, the working tank 10 is adapted to contain the working fluid and the component to be cooled, which may be a variety of components having a temperature higher than that of the working fluid, for example... Figure 1 The wafer device 2. The aforementioned working fluid (or heat transfer fluid) is a non-conductive fluid. Under normal conditions (i.e., below the boiling point of the working fluid), the working fluid is a liquid (i.e., liquid working fluid 101); and the boiling point of the working fluid is lower than or slightly equal to the temperature of the element to be cooled. Therefore, when the element to be cooled is immersed in the liquid working fluid 101, the liquid working fluid 101 will rapidly reach its critical boiling point by absorbing heat from the element to be cooled, and then vaporize into a gaseous working fluid.

[0076] Please continue to refer to this. Figure 1In some embodiments, the first heat exchange device 13 includes a partition 130 and a plurality of heat exchange channels 131, the partition 130 being used to separate the plurality of heat exchange channels 131. The plurality of heat exchange channels 131 correspond to the second end of the first connecting pipe 12. The microfluidic device 11, the first heat exchange device 13, and their heat exchange channels 131 are adapted to be supplied with circulating fluid 120, the circulating fluid 120 being the same as or different from the liquid phase working fluid 101, without limitation. In some embodiments, the diameters of the plurality of heat exchange channels 131 are respectively smaller than the diameter of the second end of the first connecting pipe 12, therefore, the circulating fluid 120 inside the first connecting pipe 12 can be dispersed in the plurality of heat exchange channels 131, so that the circulating fluid 120 can perform heat exchange synchronously and more fully. The materials of the partition 130 and the heat exchange channels 131 can be various materials with thermal conductivity, without limitation; for example, they can be metals, alloys, or combinations thereof.

[0077] In some embodiments, the immersion cooling system 1 further includes a second heat exchange device 18 located within the vapor zone V. For example, please refer to... Figure 1 The second heat exchange device 18 includes a condenser 180 located within the vapor zone V (e.g., above the surface of the liquid working fluid 101). The condenser 180 is supplied with a cooling fluid, and both the condenser 180 and its cooling fluid have a lower temperature than the mixed gaseous fluid 102, for example, below the dew point or boiling point of the working fluid. Therefore, when the gaseous working fluid in the mixed gaseous fluid 102 comes into contact with the condenser 180, heat exchange occurs between the gaseous working fluid and the condenser 180. The gaseous working fluid is cooled and condensed into liquid working fluid 101, and returns to the fluid zone L to continue cooling components (e.g., [missing information]). Figure 1 (2) The wafer device. Therefore, by using a working fluid that can be repeatedly recycled in a closed environment, it is possible to avoid unnecessary increases in the amount of working fluid required, thereby improving the cooling efficiency that each unit of working fluid can provide.

[0078] Please continue to refer to this. Figure 1 In some embodiments, the second heat exchange device 18 further includes a condenser pump 182 and a heat exchanger 184. The condenser pump 182 and the heat exchanger 184 are located independently inside or outside the working tank 10, without limitation. For example, in Figure 1The condenser pump 182 and heat exchanger 184 are both located outside the working tank 10, while only the condenser 180 is located inside the working tank 10 (e.g., within the vapor zone V). The condenser pump 182 can be any device with a pressurizing function, without limitation. The first end of the condenser pump 182 (e.g., through the first condenser tube 181) is connected to the first end of the condenser 180, the second end of the condenser pump 182 (e.g., through the second condenser tube 183) is connected to the first end of the heat exchanger 184, and the second end of the heat exchanger 184 (e.g., through the third condenser tube 185) is connected to the second end of the condenser 180. The materials of the first condenser tube 181, the second condenser tube 183, and the third condenser tube 185 can be independently metal, alloy, ceramic, plastic, rubber, or a combination of one or more of the aforementioned materials, without limitation. Therefore, the condensation circuit formed by condenser 180, condensation pump 182, and heat exchanger 184 can cool the cooling fluid (at a higher temperature) from condenser 180 to a temperature below the dew point or boiling point of the working fluid, and then pump it back to condenser 180 to condense the gaseous working fluid. Thus, the liquid working fluid 101 in the working tank 10 can be recycled for continued cooling of components to be cooled (e.g., ...). Figure 1 2) chip device.

[0079] In some embodiments, the inlet 200 is selectively located at at least one of the motherboard 20 and the cover 22; the outlet 201 is selectively located at at least one of the motherboard 20 and the cover 22. That is, in some embodiments, the inlet 200 is selectively located on the motherboard 20, or on the cover 22, or on both the motherboard 20 and the cover 22; the outlet 201 is selectively located on the motherboard 20, or on the cover 22, or on both the motherboard 20 and the cover 22.

[0080] For example, please also refer to Figure 1 and Figure 4 , Figure 4 Drawing basis as follows Figure 1 A schematic diagram of the fourth embodiment of the immersion cooling system 1, specifically a portion A. Figure 4 The inlet 200 is located on the motherboard 20, and the outlet 201 is also located on the motherboard 20. The microfluidic device 11 includes a first microfluidic tube 110 and a second microfluidic tube 111. Circulating fluid 120 can enter the second microfluidic tube 111 from the inlet 200 (along the inflow direction D0) and exit from the first microfluidic tube 110, thereby effectively cooling the wafer device 2 (see...). Figure 1 ) and its chip 21.

[0081] For details, please continue to refer to Figure 1 and Figure 4The first microfluidic tube 110 can be one or more first microfluidic tubes 110, and the first connecting tube 12 is connected to the plurality of first microfluidic tubes 110 through the outlet 201. For example, the first end of the first microfluidic tube 110 is connected to the wafer 21, the second end of the first microfluidic tube 110 is connected to the outlet 201, and the diameter of the first microfluidic tube 110 is smaller than the diameter of the first connecting tube 12. In addition, the first end of each first microfluidic tube 110 can be arranged between one or more wafers 21 according to the pattern of the wafer 21 and / or its stacking method. The second microfluidic tube 111 can be one or more second microfluidic tubes 111, and each second microfluidic tube 111 is connected to the inlet 200. For example, the first end of the second microfluidic tube 111 is connected to the wafer 21, and the second end of the second microfluidic tube 111 is connected to the inlet 200. In addition, the first end of each second microfluidic tube 111 can also be arranged between one or more wafers 21 according to the pattern of the wafer 21 and / or its stacking method.

[0082] The first microfluidic tube 110 and the second microfluidic tube 111 located in the wafer device 2 are substantially in communication with each other, so that the circulating fluid 120 can flow through the first microfluidic tube 110 and the second microfluidic tube 111. The materials of the first microfluidic tube 110 and the second microfluidic tube 111 can be plastic, rubber or a combination thereof, and are not limited thereto. Therefore, the circulating fluid 120 inside the first microfluidic tube 110 and the second microfluidic tube 111 can effectively cool the plurality of wafers 21. In this embodiment, the circulating fluid 120 can be the same as the liquid working fluid 101 (see Figure 1 The fluid in the working tank 10 is such that cross-contamination between fluids within the working tank 10 can be avoided. Therefore, in some embodiments, the inlet 200 does not need to be connected to other connecting pipes (e.g., the second connecting pipe 14) and / or the pump 15 (described in detail later). The circulating fluid 120 (i.e., the liquid working fluid 101 in this embodiment) can also enter the second microfluidic tube 111 from the inlet 200 through capillary action and / or thermal convection, thereby effectively cooling the wafer device 2 (see...). Figure 1 ) and its chip 21.

[0083] For another example, please refer to the following: Figure 1 and Figure 3 , Figure 3 Drawing basis as follows Figure 1 A schematic diagram of the third embodiment of the immersion cooling system 1, specifically a portion A. Figure 3 The inlet 200 is located on the motherboard 20, and the outlet 201 is also located on the motherboard 20. Furthermore, the immersion cooling system 1 also includes a second connecting pipe 14, which is located in the fluid zone L (see...). Figure 1Within the first connecting pipe 12, the second connecting pipe 14 connects to the inlet 200, and the diameter of the second microfluidic tube 111 is smaller than the diameter of the second connecting pipe 14. The material of the second connecting pipe 14 can be metal, alloy, ceramic, plastic, rubber, or a combination of one or more of the aforementioned materials, and can be the same as or different from the material of the first connecting pipe 12; there is no limitation. In this embodiment, the circulating fluid 120 is the same as the liquid phase working fluid 101 (see...). Figure 1 The fluid in the working tank 10 is such that cross-contamination between fluids within the working tank 10 can be avoided. Therefore, in some embodiments, the inlet 200 and the second connecting pipe 14 do not need to be connected to other pumps 15 (described in detail later). The circulating fluid 120 (i.e., the liquid working fluid 101 in this embodiment) can also enter the second microfluidic tube 111 from the second connecting pipe 14 and the inlet 200 through capillary action and / or thermal convection, thereby effectively cooling the wafer device 2 (see...). Figure 1 ) and its wafer 21. In addition, a fluid zone L (see also located in the working tank 10) is provided. Figure 1 The second connecting pipe 14, which connects to the wafer device 2, also allows the immersion cooling system 1 to avoid the problems caused by existing cooling devices located outside the system.

[0084] For another example, please refer to the following: Figure 1 and Figure 2 , Figure 2 Drawing basis as follows Figure 1 A schematic diagram of the structure of a second embodiment of an immersion cooling system 1, specifically a portion A. Figure 2 The inlet 200 is located on the motherboard 20, and the outlet 201 is also located on the motherboard 20. Furthermore, the immersion cooling system 1 includes a pump 15, which is located in the fluid zone L (see...). Figure 1 Within, pump 15 is connected to the second connecting pipe 14. For example, in Figure 2 The two ends of the second connecting pipe 14 are respectively connected to the pump 15 and the inlet 200. In this embodiment, the circulating fluid 120 is the same as the liquid working fluid 101 (see...). Figure 1 The circulating fluid 120 (i.e., the liquid working fluid 101 in this embodiment) can be pumped from the second connecting pipe 14 and inlet 200 into the second microfluidic tube 111 by the pressurized pump 15, in addition to capillary action and / or thermal convection, thereby cooling the wafer device 2 (see...) more quickly and effectively. Figure 1 ) and its wafer 21. In addition, a fluid zone L (see also located in the working tank 10) is provided. Figure 1 The immersion cooling system 1, which connects the chip device 2 and the second connecting pipe 14 to the pump 15, can also avoid the problems caused by existing cooling devices located outside the system.

[0085] In some embodiments, the wafer device 2 is electrically connected to the pump 15 to supply power to the pump 15 and can send control signals to the pump 15 to control the pump 15 (e.g., actuate the pump 15 to pressurize and circulate the fluid 120). In some embodiments, the pump 15 is located on the motherboard 20 of the wafer device 2 to be electrically connected to the motherboard 20 and to receive control signals from the wafer device 2 and its wafer 21. Therefore, the pump 15 does not need to be electrically connected to an additional power supply and / or control device (e.g., IPC), thus avoiding increased cooling costs due to contamination of the liquid working fluid 101.

[0086] For another example, please refer to [link / reference]. Figure 1 .exist Figure 1 The inlet 200 is located on the motherboard 20, and the outlet 201 is also located on the motherboard 20. Furthermore, the immersion cooling system 1 includes a third connecting pipe 16, located within the fluid zone L. The first end of the third connecting pipe 16 is connected to the first heat exchange device 13, and the second end is connected to the pump 15. In this embodiment, since a closed loop is formed between the wafer device 2, the microfluidic device 11, the first connecting pipe 12, the first heat exchange device 13, the third connecting pipe 16, the pump 15, and the second connecting pipe 14, the circulating fluid 120 can be the same as or different from the liquid working fluid 101, without limitation. Therefore, the circulating fluid 120 can be independently discharged from the outlet 201, and then pumped back through the heat exchange device 13 and the pump 15, and then returned to the second microfluidic pipe 111 from the second connecting pipe 14 and the inlet 200, thereby effectively cooling the wafer device 2 and its wafer 21. Therefore, in addition to the pump 15 and the second connecting pipe 14, the immersion cooling system 1 can also avoid the problems caused by existing cooling devices located outside the system by supplementing the third connecting pipe 16, which is also located in the fluid zone L of the working tank 10 and connects the pump 15 and the first heat exchange device 13.

[0087] For another example, please refer to the following: Figure 1 and Figure 6 , Figure 6 Drawing basis as follows Figure 1 A schematic diagram of the sixth embodiment of the immersion cooling system 1, specifically a portion A. Figure 6The inlet 200 is located at the cover 22, and the outlet 201 is also located at the cover 22. The material of the cover 22 can be various thermally conductive materials, such as metals, alloys, or combinations thereof, and is not limited. Furthermore, this embodiment may optionally include a second connecting pipe 14, a pump 15, and a third connecting pipe 16; specific implementations can be found as described above and will not be detailed here. Therefore, by different configurations of the inlet 200 and outlet 201, more immersion cooling systems 1 can be provided that avoid the problems caused by existing external cooling devices. Additionally, the wafer device 2 (see...) Figure 1 The heat from the wafer assembly 2 can be discharged through the heat-conducting cap 22, which is also located within the fluid region L, and exchange heat with the liquid working fluid 101 in the fluid region L, thereby cooling the wafer assembly 2 (see [reference needed]). Figure 1 ) and its chip 21.

[0088] For another example, please refer to the following: Figure 1 and Figure 7 , Figure 7 Drawing basis as follows Figure 1 A schematic diagram of the structure of a seventh embodiment of an immersion cooling system 1, specifically a portion A. Figure 7 The inlet (including inlet 200 and inlet 200') is located simultaneously on the motherboard 20 and the cover 22 (i.e., inlet 200 is located on the motherboard 20 and inlet 200' is located on the cover 22), and the outlet (including outlet 201 and outlet 201') is located simultaneously on the motherboard 20 and the cover 22 (i.e., outlet 201 is located on the motherboard 20 and outlet 201' is located on the cover 22). The microfluidic device 11 includes a plurality of first microfluidics 110, 110' and a plurality of second microfluidics 111, 111'. Circulating fluid 120 can enter the second microfluidics 111, 111' from inlet 200, 200' (along the inflow direction D0, D0') and exit from the first microfluidics 110, 110', thereby effectively cooling the wafer device 2 (see Figure 1 ) and its chip 21.

[0089] For details, please continue to refer to Figure 1 and Figure 7The first connecting tube 12 is connected to the plurality of first microfluidic tubes 110, 110' via outlets 201, 201'. For example, the first end of each first microfluidic tube 110, 110' is connected to the wafer 21, and the second end of each first microfluidic tube 110, 110' is connected to outlets 201, 201', respectively. The diameter of each first microfluidic tube 110, 110' is smaller than the diameter of the first connecting tube 12. Furthermore, the first end of each first microfluidic tube 110, 110' can be arranged between one or more wafers 21 according to the pattern of the wafer 21 and / or its stacking arrangement. Each second microfluidic tube 111, 111' is connected to inlets 200, 200', respectively. For example, the first end of each second microfluidic tube 111, 111' is connected to the wafer 21, and the second end of each second microfluidic tube 111, 111' is connected to inlets 200, 200', respectively. Furthermore, the first ends of each of the second microfluidic tubes 111, 111' can also be arranged between one or more wafers 21 according to the pattern of the wafer 21 and / or its stacking method. The materials of the first microfluidic tube 110' and the second microfluidic tube 111' can be the same as or different from the materials of the first microfluidic tube 110 and the second microfluidic tube 111, and there is no limitation. In addition, this embodiment may also selectively include a second connecting pipe 14, or include a second connecting pipe 14 and a pump 15, or include a second connecting pipe 14, a pump 15 and a third connecting pipe 16, as described above, and will not be detailed here. Therefore, through the above different configurations of the inlets 200, 200' and outlets 201, 201', more immersion cooling systems 1 (see Figure 1 ).

[0090] For example, in Figure 7The first connecting pipe 12 includes a first main flow pipe 127 and a plurality of first flow pipes 128, 128'. The first end of each first flow pipe 128, 128' is connected to the first main flow pipe 127 to connect to the first heat exchange device 13. The second ends of the first flow pipes 128, 128' are respectively connected to outlets 201, 201' to connect to the first microfluidic pipes 110, 110'. The diameter of the first main flow pipe 127 and the first flow pipes 128, 128' is not limited; for example, the diameter of each first flow pipe 128, 128' is smaller than the diameter of the first main flow pipe 127. The materials of the first main flow pipe 127 and the first flow pipes 128, 128' can be metal, alloy, ceramic, plastic, rubber, or a combination of one or more of the aforementioned materials, and the materials of the first main flow pipe 127 and the first flow pipes 128, 128' can be the same or different from each other, without limitation. Furthermore, this embodiment may optionally include a second connecting pipe 14, or include a second connecting pipe 14 and a pump 15, or include a second connecting pipe 14, a pump 15, and a third connecting pipe 16, as described above, and will not be elaborated further here. Therefore, through the different configurations of the inlets 200, 200' and outlets 201, 201' described above, more immersion cooling systems 1 (see [reference needed]) can be provided that avoid the problems caused by existing external cooling devices. Figure 1 ).

[0091] For another example, in Figure 7 The immersion cooling system 1 further includes a second connecting pipe 14 located within the fluid region L, and the second connecting pipe 14 includes a second main flow pipe 140 and a plurality of secondary flow pipes 141, 141'. The secondary flow pipes 141, 141' are respectively connected to inlets 200, 200', to connect to second microfluidics 111, 111' through inlets 200, 200' respectively. The diameter of the second main flow pipe 140 and the secondary flow pipes 141, 141' is not limited; for example, the diameter of each secondary flow pipe 141, 141' is smaller than the diameter of the second main flow pipe 140. The materials of the second main flow pipe 140 and the secondary flow pipes 141, 141' can be metal, alloy, ceramic, plastic, rubber, or a combination of one or more of the aforementioned materials, and the materials of the second main flow pipe 140 and the secondary flow pipes 141, 141' can be the same or different from each other, without limitation. Furthermore, this embodiment may optionally include pump 15, or include pump 15 and third connecting pipe 16, as described above, and will not be elaborated further here. Therefore, through the different configurations of the inlets 200, 200' and outlets 201, 201' described above, more immersion cooling systems 1 (see [reference needed]) can be provided that avoid the problems caused by existing external cooling devices. Figure 1 ).

[0092] Please also refer to Figure 1 and Figure 5 , Figure 5 Drawing basis as follows Figure 1 A schematic diagram of the fifth embodiment of the immersion cooling system 1, specifically a portion A. The heat exchange channel 131 of the first heat exchange device 13 has a flow direction D2 (see...). Figure 1 ; or flow direction D2', see Figure 5 The flow directions D2, D2' can be set to be perpendicular to the vertical line (e.g., depending on different requirements). Figure 1 and Figure 5 There are different angular relationships between them (in the Z direction). For example, in Figure 1 The first heat exchange device 13 is disposed adjacent to the wafer device 2, and the flow direction D2 of the heat exchange channel 131 is substantially parallel to the vertical line (that is, the flow direction D2 and the vertical line form an angle, for example, less than 45°). Therefore, the circulating fluid 120 (or the liquid working fluid 101) can directly enter the interior of the heat exchange channel 131 after being discharged from the outlet 201, so as to quickly perform heat exchange. Or, for example, in Figure 5 The first connecting pipe 12 is relatively long, causing the first heat exchange device 13 to be positioned away from the wafer device 2, and the flow direction D2' of the heat exchange channel 131 is substantially perpendicular to the vertical line (that is, the flow direction D2' and the vertical line form an angle, for example, 90°±45°). Therefore, the circulating fluid 120 (or liquid working fluid 101) can be discharged from the outlet 201 and undergo more sufficient heat exchange in the relatively long first connecting pipe 12, and enter the first heat exchange device 13 at a lower temperature (i.e., a larger temperature difference between the circulating fluid 120 and the first heat exchange device 13), thereby reducing the workload of the first heat exchange device 13.

[0093] Please also refer to Figure 1 , Figures 8A to 8C , Figures 8A to 8C Cross-sectional structural schematic diagrams of the first connecting pipe 12 according to some embodiments are shown. Figure 1 The interior of the first connecting pipe 12 has an inner wall 122 (see...). Figures 8A to 8C The first connecting pipe 12 includes a connecting pipe disturbance part 123, which is located on the inner wall 122 (see...). Figures 8A to 8C The perturbation part 123 of the connecting pipe is, for example, a mesh 124 (see...). Figure 8A ), metal particles 125 (see Figure 8B ), fin 126 (see Figure 8C(or a combination thereof, as detailed later). That is, the connecting pipe disturbance part 123 may be a combination of two or three of the above, such as a combination of mesh 124 and metal particles 125, a combination of mesh 124 and fins 126, a combination of metal particles 125 and fins 126, or a combination of mesh 124, metal particles 125 and fins 126. Through the connecting pipe disturbance part 123 located on the inner wall 122 of the first connecting pipe 12, when the circulating fluid 120 flows through the first connecting pipe 12, it will further undergo heterogeneous nucleation (or heterogeneous nucleation) at the heterogeneous interface (e.g., between the liquid surface and the solid surface) between the circulating fluid 120 (liquid) and the connecting pipe disturbance part 123 (e.g., solid) and form bubbles 121 (i.e., gaseous circulating fluid 120). The more bubbles 121 are formed, the more heat is removed from the circulating fluid 120 in the liquid phase, thus better cooling the circulating fluid 120 in the liquid phase.

[0094] For example, in Figure 8A The aforementioned perturbation section 123 of the connecting pipe is a grid 124. The grid 124 can be one or more layers of grid 124, without limitation; for example, in... Figure 8A The grid 124 consists of four to five layers. The sieve openings and mesh count (i.e., the number of openings per unit area) of the grid 124 are not limited and can be configured according to various needs. The material of the grid 124 can be metal, alloy, or a combination thereof, and is also not limited. Therefore, through the grid 124 located on the inner wall 122 of the first connecting pipe 12, more rough surfaces and voids can be created on the inner wall 122. The circulating liquid fluid 120 can thus form more heterogeneous interfaces on these rough surfaces and voids, which is more conducive to heterogeneous nucleation and the formation of more bubbles 121.

[0095] For another example, in Figure 8B The aforementioned perturbation section 123 of the connecting pipe is composed of metal particles 125. The particle size and distribution of the metal particles 125 are not limited and can be configured according to various requirements; furthermore, the particle sizes of each metal particle 125 can be substantially the same or different from each other, which is also not limited. The material of the metal particles 125 can be metal, alloy, or a combination thereof, and is not limited; for example, copper. Therefore, through the metal particles 125 located on the inner wall 122 of the first connecting pipe 12, more rough surfaces and voids can be created on the inner wall 122. The circulating fluid 120 of the liquid phase can thus form more heterogeneous interfaces on the plurality of rough surfaces and voids, which is more conducive to heterogeneous nucleation and the formation of more bubbles 121. Furthermore, in some embodiments, the stacking height of the metal particles 125 (e.g., ...) is... Figure 8B The Y direction can also be configured according to various needs; for example, in Figure 8B The inner wall 122 near the outlet 201 (see Figure 1 one side of ) (i.e. Figure 8B The side closest to the -Z direction has metal particles 125 with a high stacking height, causing more of the liquid circulating fluid 120 to undergo heterogeneous nucleation upon entering the first connecting pipe 12. Therefore, the liquid circulating fluid 120 can then rapidly form bubbles 121, and better cool the material from the wafer device 2 (see...). Figure 1 The circulating fluid is 120.

[0096] For another example, in Figure 8C The aforementioned perturbation section 123 of the connecting pipe is a fin 126. The fin 126 can be one or more fins 126, and is not limited thereto; for example, it can be an array of fins 126 (e.g., Figure 8C (As shown). The direction of extension of fin 126 is also not limited. For example, in Figure 8C Multiple fins 126 are arranged along the direction (e.g.) Figure 8C The fins are arranged in the +Z direction or flow direction D2), and the extension direction of each fin 126 is (e.g., Figure 8C The +Y direction is substantially perpendicular to the flow direction D2 of the circulating fluid 120. Or, for example, a plurality of fins 126 are arranged along an arrangement direction (e.g., the circumferential direction of the inner wall 122 of the first connecting pipe 12), and the extension direction of each fin 126 (e.g., the +Y direction) is substantially perpendicular to the flow direction D2 of the circulating fluid 120. Figure 8C The +Z direction is substantially parallel to the flow direction of the circulating fluid 120 (e.g., for example, the +Z direction). Figure 8C The +Z direction or flow direction D2). That is, the length of fin 126 (e.g., the +Z direction or flow direction D2). Figure 8C (Z direction), thickness (e.g.) Figure 8C (X direction) and height (e.g.) Figure 8C The fins 126 are not limited in the Y direction and can be configured according to various needs; the length, thickness, and height of each fin 126 can be substantially the same or different from each other, and are also not limited. The pitch between each fin 126 is also not limited. The material of the fins 126 can be metal, alloy, or a combination thereof, and is not limited. Therefore, by means of the fins 126 located on the inner wall 122 of the first connecting pipe 12, more rough surfaces and voids can be created on the inner wall 122. The circulating fluid 120 of the liquid phase can thus form more heterogeneous interfaces on the plurality of rough surfaces and voids, which is more conducive to heterogeneous nucleation and the formation of more bubbles 121. In addition, in some embodiments, the height of the fins 126 can be configured according to various needs; for example, in Figure 8C The inner wall 122 near the outlet 201 (see Figure 1 one side of ) (i.e. Figure 8C The side closest to the -Z direction has a height (e.g., Figure 8CThe higher fins 126 (in the Y direction) allow more liquid-phase circulating fluid 120 to undergo heterogeneous nucleation upon entering the first connecting pipe 12. Therefore, the liquid-phase circulating fluid 120 can form bubbles 121 more quickly and better cool the material from the wafer device 2 (see...). Figure 1 The circulating fluid is 120.

[0097] Please refer to this again. Figure 1 According to some embodiments, the immersion cooling system 1 further includes a cooling device 17 located on the side of the wafer device 2 away from the motherboard 20, for example, the cooling device 17 is located on the side of the cover 22 away from the motherboard 20. The cooling device 17 can be any device with heat exchange function, such as a boiler plate. The material of the cooling device 17 can be any material with thermal conductivity and is not limited; for example, it can be a metal, alloy, or a combination thereof. Therefore, by substantially contacting the cooling device 17 with the wafer device 2 and / or its wafer 21, the cooling device 17 can more fully exchange heat with the wafer device 2 and / or its wafer 21. Even more, in some embodiments, one side of the cooling device 17 (e.g., the side closer to the motherboard 20) substantially contacts the wafer device 2 and / or its wafer 21, while the other side of the cooling device 17 (e.g., the side away from the motherboard 20) is simultaneously substantially in contact with the liquid phase working fluid 101. Therefore, the cooling device 17 can remove the heat of the wafer device 2 and / or its wafer 21 more directly and quickly to the liquid working fluid 101, so as to cool the wafer device 2 and / or its wafer 21 more effectively.

[0098] For example, please also refer to Figure 1 , Figures 9A to 9C , Figures 9A to 9C Cross-sectional structural schematic diagrams of the cooling device 17 according to some embodiments are shown. Figure 1 The cooling device 17 has a cooling surface 170 (see Figures 9A to 9C The cooling surface 170 is located on the side of the cooling device 17 furthest from the motherboard 20. The cooling device 17 includes a cooling disturbance part 171, which is located on the cooling surface 170 (see...). Figures 9A to 9C The cooling disturbance part 171 is, for example, a mesh 172 (see...). Figure 9A ), metal particles 173 (see Figure 9B ), fin 174 (see Figure 9C(or a combination thereof, as detailed later). That is, the cooling disturbance section 171 may be a combination of two or three of the aforementioned elements, such as a combination of mesh 172 and metal particles 173, a combination of mesh 172 and fins 174, a combination of metal particles 173 and fins 174, or a combination of mesh 172, metal particles 173 and fins 174. Through the cooling disturbance section 171 located on the cooling surface 170 of the cooling device 17, when the liquid working fluid 101 flows near the cooling surface 170, it will further undergo heterogeneous nucleation and form bubbles 103 (i.e., gaseous working fluid) at the heterogeneous interface (e.g., between the liquid surface and the solid surface) between the liquid working fluid 101 (liquid) and the cooling disturbance section 171 (e.g., solid), thereby better cooling the liquid working fluid 101.

[0099] For example, in Figure 9A The aforementioned cooling disturbance section 171 is a grid 172. The grid 172 can be one or more layers of grid 172, without limitation; for example, in... Figure 9A The grid 172 consists of four to five layers. The mesh size and mesh count (i.e., the number of openings per unit area) of the grid 172 are not limited and can be configured according to various needs. The material of the grid 172 can be metal, alloy, or a combination thereof, and is also not limited. Therefore, by using the grid 172 located on the cooling surface 170 of the cooling device 17, more rough surfaces and voids can be created on the cooling surface 170. The liquid working fluid 101 can thus form more heterogeneous interfaces on these multiple rough surfaces and voids, which is more conducive to heterogeneous nucleation and the formation of more bubbles 103.

[0100] For another example, in Figure 9B The aforementioned cooling disturbance part 171 is metal particles 173. The particle size and distribution of the metal particles 173 are not limited and can be configured according to various needs; furthermore, the particle sizes of each metal particle 173 can be substantially the same or different from each other, which is also not limited. The material of the metal particles 173 can be metal, alloy, or a combination thereof, which is not limited; for example, copper. Therefore, by using the metal particles 173 located on the cooling surface 170 of the cooling device 17, more rough surfaces and voids can be created on the cooling surface 170. The liquid working fluid 101 can thus form more heterogeneous interfaces on the plurality of rough surfaces and voids, which is more conducive to heterogeneous nucleation and the formation of more bubbles 103. Furthermore, in some embodiments, the stacking height of the metal particles 173 (e.g., ...) is... Figure 9B The Y direction can also be configured according to various needs; for example, in Figure 9B The cooling surface 170 is closer to the direction of gravity (e.g.) Figure 9BMetal particles 173 with a high stacking height are disposed on one side of the cooling surface 170 (in the -Z direction), allowing the liquid working fluid 101 to undergo heterogeneous nucleation on the side of the cooling surface 170 closer to the direction of gravity (i.e., away from the direction of movement of the bubbles 103). Therefore, the liquid working fluid 101 can further form more bubbles 103; even moreover, these bubbles 103 can combine with each other as they move to the surface of the liquid working fluid 101, thereby removing even more heat. Based on this, the cooling disturbance section 171 can cool the liquid working fluid 101 over a wider area and more effectively.

[0101] For another example, in Figure 9C The aforementioned cooling disturbance part 171 is a fin 174. The fin 174 can be one or more fins 174, and is not limited thereto; for example, it can be an array of fins 174 (e.g., Figure 9C (As shown). The direction of extension of fin 174 is also not limited. For example, in Figure 9C Multiple fins 174 are arranged along the direction (e.g.) Figure 9C The fins are arranged in the +Z direction, and the extension direction of each fin 174 is (e.g., the direction of extension). Figure 9C The +Y direction is substantially perpendicular to the flow direction of the liquid working fluid 101 (e.g., Figure 9C (in the +Z direction); or for example, multiple fins 174 along the arrangement direction (e.g., in the +Z direction); Figure 9C The fins are arranged in the X direction, and the extension direction of each fin 174 is (e.g., in the X direction). Figure 9C The +Z direction is substantially parallel to the flow direction of the liquid working fluid 101 (e.g., for example, the +Z direction). Figure 9C (in the +Z direction). That is, the length of the fin 174 (e.g., in the +Z direction). Figure 9C (Z direction), thickness (e.g.) Figure 9C (X direction) and height (e.g.) Figure 9C The fins 174 are not limited in the Y direction and can be configured according to various needs; the length, thickness, and height of each fin 174 can be substantially the same or different from each other, and are also not limited. The spacing between each fin 174 is also not limited. The material of the fins 174 can be metal, alloy, or a combination thereof, and is not limited. Therefore, by means of the fins 174 located on the cooling surface 170 of the cooling device 17, more rough surfaces and voids can be created on the cooling surface 170. The liquid working fluid 101 can thus form more heterogeneous interfaces on the plurality of rough surfaces and voids, which is more conducive to heterogeneous nucleation and the formation of more bubbles 103. In addition, in some embodiments, the height of the fins 174 can be configured according to various needs; for example, in Figure 9C The cooling surface 170 is closer to the direction of gravity (e.g.) Figure 9C A height (e.g., in the -Z direction) is provided on one side. Figure 9CThe fins 174 (in the Y direction) are higher, allowing the liquid working fluid 101 to undergo heterogeneous nucleation on the side of the cooling surface 170 closer to the direction of gravity (i.e., away from the direction of movement of the bubbles 103). Therefore, the liquid working fluid 101 can form more bubbles 103; furthermore, these bubbles 103 can combine to form larger bubbles 103 as they move to the surface of the liquid working fluid 101, thereby removing more heat. Based on this, the cooling disturbance section 171 can cool the liquid working fluid 101 over a wider area and more effectively.

[0102] In summary, in some embodiments, by connecting the wafer device to cooling pipes (e.g., microfluidic devices, first connecting pipes, and first heat exchange devices) also located inside the system (or its working tank), the immersion cooling system avoids connecting the cooling pipes outside the system (or its working tank). Therefore, in some embodiments, the immersion cooling system achieves cooling performance equivalent to (or even superior to) that of the prior art through shorter cooling pipes located inside the system (thus requiring less pumping power).

Claims

1. An immersion cooling system, characterized in that, Include: The working tank contains the fluid zone; A wafer apparatus, located within the fluid region, having an inlet and an outlet, comprises: A motherboard having a main surface that is substantially parallel to a vertical line; Chips; and A cover is located on the motherboard, and the chip is located between the cover and the motherboard; A microfluidic device is located within the wafer device, with a first end connected to the inlet and a second end connected to the outlet; A first connecting pipe is located within the fluid region, and a first end of the first connecting pipe is connected to the outlet; and A first heat exchange device is located within the fluid region and is connected to the second end of the first connecting pipe.

2. The immersion cooling system as described in claim 1, characterized in that, The inlet is selectively located on the motherboard, or on the cover, or on both the motherboard and the cover, and the outlet is selectively located on the motherboard, or on the cover, or on both the motherboard and the cover.

3. The immersion cooling system as described in claim 2, characterized in that: The inlet is located on the motherboard or the cover; The outlet is located on the motherboard or the cover; and The microfluidic device comprises: A first microfluidic tube, wherein a first end of the first microfluidic tube is connected to the wafer, a second end of the first microfluidic tube is connected to the outlet, and the diameter of the first microfluidic tube is smaller than the diameter of the first connecting tube. and A second microfluidic tube, the first end of which is connected to the wafer, and the second end of which is connected to the inlet.

4. The immersion cooling system as described in claim 2, characterized in that: The inlet is located on the motherboard and the cover; The outlet is located on the motherboard and the cover; and The microfluidic device comprises: A plurality of first microfluidic tubes, wherein a first end of each first microfluidic tube is connected to the wafer, a second end of each first microfluidic tube is connected to the outlet, and the diameter of each first microfluidic tube is smaller than the diameter of the first connecting tube. and Multiple second microfluidic tubes, each second microfluidic tube having a first end connected to the wafer and a second end connected to the inlet.

5. The immersion cooling system as described in claim 3 or 4, characterized in that, It also includes a second connecting pipe, which is located within the fluid zone and connects to the inlet.

6. The immersion cooling system as described in claim 5, characterized in that, It also includes a pump located within the fluid zone, the pump being connected to the second connecting pipe.

7. The immersion cooling system as described in claim 6, characterized in that, The wafer device is electrically connected to the pump to supply power and control the pump.

8. The immersion cooling system as described in claim 7, characterized in that, The pump is located on the main board and is electrically connected to the main board.

9. The immersion cooling system as described in claim 6, characterized in that, It also includes a third connecting pipe located within the fluid zone, with a first end connected to the first heat exchange device and a second end connected to the pump.

10. The immersion cooling system as described in claim 3 or 4, characterized in that, It also includes a cooling device located on the side of the wafer assembly away from the motherboard.

11. The immersion cooling system as described in claim 10, characterized in that, The cooling device is located on the side of the cover away from the motherboard.

12. The immersion cooling system as described in claim 11, characterized in that, The cooling device has a cooling surface located on the side of the cooling device away from the motherboard, and the cooling device includes a cooling disturbance part located on the cooling surface.

13. The immersion cooling system as described in claim 12, characterized in that, The cooling disturbance part is a mesh, metal particles, fins, or a combination thereof.

14. The immersion cooling system as described in claim 3 or 4, characterized in that, The first connecting pipe has an inner wall and includes a connecting pipe disturbance portion located on the inner wall.

15. The immersion cooling system as described in claim 14, characterized in that, The disturbance part of the connecting pipe is a mesh, metal particles, fins, or a combination thereof.

16. The immersion cooling system as described in claim 3 or 4, characterized in that, The first heat exchange device includes a plurality of heat exchange channels, and the flow direction of each heat exchange channel is substantially perpendicular to the vertical line.

17. The immersion cooling system as described in claim 3 or 4, characterized in that, The first heat exchange device includes multiple heat exchange channels, and the flow direction of each heat exchange channel is substantially parallel to the vertical line.

18. The immersion cooling system as described in claim 3 or 4, characterized in that, The working tank also includes a steam zone, and the immersion cooling system also includes a second heat exchange device located within the steam zone.

19. The immersion cooling system as described in claim 3 or 4, characterized in that, The working tank further includes a steam zone, and the immersion cooling system further includes a second heat exchange device, the second heat exchange device comprising: The condenser is located within the vapor zone; Condensate pump; and A heat exchanger, wherein a first end of the condenser pump is connected to a first end of the condenser, a second end of the condenser pump is connected to a first end of the heat exchanger, and a second end of the heat exchanger is connected to a second end of the condenser.

20. The immersion cooling system as described in claim 19, characterized in that, The condensate pump is located outside the working tank.

21. The immersion cooling system as described in claim 19, characterized in that, The heat exchanger is located outside the working tank.

22. The immersion cooling system as described in claim 3 or 4, characterized in that, The first heat exchange device includes a partition and a plurality of heat exchange channels, wherein the partition separates the plurality of heat exchange channels.

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