Silicon-based microcavity anode structure for OLED microdisplay and method for manufacturing the same

Abstract

The application discloses a preparation method of a microcavity anode structure of a silicon-based OLED micro display, which comprises the following steps: preparing a CMOS substrate; preparing a metal anode layer and a transparent anode layer; forming a first PR glue layer on the transparent anode layer; preparing a first anode structure on the transparent anode layer; forming a second PR glue layer on the transparent anode layer and the first anode structure; preparing a second anode structure and a third anode structure; forming a third PR glue layer on the transparent anode layer, the first anode structure and the second anode structure; etching a first groove and a second groove on the transparent anode layer, and removing the third PR glue layer. The preparation method of the microcavity anode structure of the silicon-based OLED micro display has the advantages of simple process flow, less film forming and etching times, and reduced yield loss caused by multiple film forming and etching. The application further discloses a microcavity anode structure of a silicon-based OLED micro display.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor technology. Specifically, this invention relates to a silicon-based OLED microdisplay microcavity anode structure and its fabrication method. Background Technology

[0002] Organic light-emitting diode (OLED) display technology features self-illumination, high contrast, and high response speed, making it widely suitable for application in mobile products.

[0003] Traditional R / G / B sub-pixels with the same anode thickness can no longer meet the requirements of high brightness and high color gamut. In order to further improve the performance and color of OLED devices, a device structure with strong microcavity resonance is generally adopted, that is, the anode thickness of R / G / B sub-pixels is different.

[0004] The existing silicon-based OLED microdisplay microcavity anode structure requires multiple ITO film depositions and etching processes during fabrication, which results in problems such as numerous film types and number of depositions, complex processes, many masks, low yield, and a large number of equipment required to meet production capacity. Summary of the Invention

[0005] This invention aims to at least solve one of the technical problems existing in the prior art. To this end, this invention provides a method for fabricating a microcavity anode structure for a silicon-based OLED microdisplay, with the purpose of reducing the number of film deposition and etching steps and improving product yield.

[0006] To achieve the above objectives, the technical solution adopted by the present invention is: a method for fabricating a silicon-based OLED microdisplay microcavity anode structure, comprising: Fabrication of CMOS substrate; A metal anode layer is fabricated on a CMOS substrate, and a transparent anode layer is fabricated on the metal anode layer; The first cleaning, coating, exposure, development and curing are performed to form the first PR adhesive layer on the transparent anodized layer; A first anode structure is fabricated on a transparent anode layer; A second cleaning, coating, exposure, development and curing process is performed to form a second PR adhesive layer on the transparent anode layer and the first anode structure; A second anode structure and a third anode structure are fabricated on a transparent anode layer; A third cleaning, coating, exposure, development and curing process is performed to form a third PR adhesive layer on the transparent anode layer, the first anode structure and the second anode structure; A first trench and a second trench are etched on the transparent anode layer. The first trench is located between the first anode structure and the second anode structure, and the second trench is located between the second anode structure and the third anode structure. The first trench and the second trench extend to the CMOS substrate, and the third PR adhesive layer is removed.

[0007] The height dimensions of the third anode structure, the second anode structure, and the first anode structure change in a step-like manner.

[0008] A CMOS driving circuit is fabricated on a silicon wafer substrate to form the CMOS substrate.

[0009] After cleaning the CMOS substrate, the metal anode layer and the transparent anode layer are prepared on the CMOS substrate using a metal sputtering machine.

[0010] When fabricating the first anode structure on the transparent anode layer, the process involves first patterning, then dry etching, and finally removing the first PR adhesive layer to form the first anode structure.

[0011] The thickness of the transparent anode layer is controlled by using either time-etching mode or EPD mode during dry etching.

[0012] After a second cleaning, coating, exposure, development and curing, the second PR adhesive layer formed on the first anode structure completely covers the first anode structure, while the second PR adhesive layer formed on the transparent anode layer does not completely cover the transparent anode layer.

[0013] When fabricating the second anode structure and the third anode structure on the transparent anode layer, the process involves first patterning, then dry etching, and finally removing the second PR adhesive layer to form the second anode structure and the third anode structure.

[0014] The thickness of the transparent anode layer is controlled by using either time-etching mode or EPD mode during dry etching.

[0015] The present invention also provides a silicon-based OLED microdisplay microcavity anode structure, which is formed using the above method.

[0016] The method for preparing the silicon-based OLED microdisplay microcavity anode structure of the present invention has a simple process flow, fewer film formation and etching steps, reduces yield loss caused by multiple film formation and etching steps, and improves product yield; in addition, it can greatly increase equipment capacity. Attached Figure Description

[0017] This manual includes the following figures, which illustrate the following: Figure 1 This is a schematic diagram of the microcavity anode structure of a silicon-based OLED microdisplay; Figures 2a-2h This is a schematic diagram of the fabrication process of the microcavity anode structure for a silicon-based OLED microdisplay; The following labels are used in the diagram: 1. CMOS substrate; 2. Metal anode layer; 3. Transparent anode layer; 4. First PR adhesive layer; 5. Second PR adhesive layer; 6. Third PR adhesive layer; 7. First anode structure; 8. Second anode structure; 9. Third anode structure; 10. First trench; 11. Second trench. Detailed Implementation

[0018] The specific embodiments of the present invention will be further described in detail below with reference to the accompanying drawings, in order to help those skilled in the art to have a more complete, accurate and in-depth understanding of the concept and technical solutions of the present invention, and to facilitate its implementation.

[0019] It should be noted that in the following embodiments, the terms "first," "second," and "third" do not represent an absolute distinction in structure and / or function, nor do they represent the order of execution; they are merely for the convenience of description.

[0020] like Figures 2a to 2h As shown, the present invention provides a method for fabricating a microcavity anode structure for a silicon-based OLED microdisplay, comprising the following steps: S1. Fabrication of CMOS substrate 1; S2. Prepare a metal anode layer 2 on the CMOS substrate 1, and prepare a transparent anode layer 3 on the metal anode layer 2; S3. Perform the first cleaning, coating, exposure, development and curing to form the first PR adhesive layer 4 on the transparent anode layer 3; S4. Prepare the first anode structure 7 on the transparent anode layer 3; S5. Perform a second cleaning, coating, exposure, development and curing to form a second PR adhesive layer 5 on the transparent anode layer 3 and the first anode structure 7; S6. Prepare a second anode structure 8 and a third anode structure 9 on the transparent anode layer 3; S7. Perform a third cleaning, coating, exposure, development and curing to form a third PR adhesive layer 6 on the transparent anode layer 3, the first anode structure 7 and the second anode structure 8. S8. A first trench 10 and a second trench 11 are etched on the transparent anode layer 3. The first trench 10 is located between the first anode structure 7 and the second anode structure 8, and the second trench 11 is located between the second anode structure 8 and the third anode structure 9. The first trench 10 and the second trench 11 extend to the CMOS substrate 1, and the third PR adhesive layer 6 is removed.

[0021] Specifically, such as Figure 2hAs shown, the heights of the third anode structure 9, the second anode structure 8, and the first anode structure 7 change in a stepped manner. The height of the third anode structure 9 is greater than the height of the second anode structure 8, and the height of the second anode structure 8 is greater than the height of the first anode structure 7. The second anode structure 8 is located between the first anode structure 7 and the third anode structure 9. The first anode structure 7, the second anode structure 8, and the third anode structure 9 are made of ITO.

[0022] like Figure 2a As shown, in step S1 above, a CMOS driving circuit is fabricated on a silicon wafer substrate to form a CMOS substrate 1.

[0023] like Figure 2b As shown, in step S2 above, after cleaning the CMOS substrate 1, a metal anode layer 2 and a transparent anode layer 3 are fabricated on the CMOS substrate 1 using a metal sputtering machine. The metal anode layer 2 is made of Al, and the transparent anode layer 3 is made of ITO.

[0024] In step S3 above, after the coating is completed, a first cleaning, coating, exposure (mask1), development, and curing are performed to form a first PR adhesive layer 4 on the transparent anode layer 3, resulting in the following: Figure 2c In the structure shown, the first PR adhesive layer 4 does not completely cover the transparent anode layer 3.

[0025] like Figure 2d As shown, in step S4 above, when the first anode structure 7 is prepared on the transparent anode layer 3, it is first patterned, then dry etched, and then the first PR adhesive layer 4 is removed to form the first anode structure 7.

[0026] In step S3 above, the patterning is completed using the PH process.

[0027] In step S3 above, during dry etching, the thickness of the transparent anode layer 3 is controlled using either time-etching mode or EPD mode, leaving the required thickness of the transparent anode layer 3 for the structural requirements. Then, the first PR adhesive layer 4 (photoresist) is stripped. After the adhesive stripping is complete, the wafer is cleaned to remove the polymer, ultimately yielding the patterned pattern.

[0028] In step S5 above, after the second cleaning, coating, exposure, development, and curing, the second PR adhesive layer 5 formed on the first anode structure 7 completely covers the first anode structure 7, while the second PR adhesive layer 5 formed on the transparent anode layer 3 does not completely cover the transparent anode layer 3. For example... Figure 2e As shown, the second PR adhesive layer 5 completely covers the top surface of the first anode structure 7, and another second PR adhesive layer 5 covers a portion of the top surface of the transparent anode layer 3. The height of the top surface of the transparent anode layer 3 is greater than the height of the top surface of the first anode structure 7.

[0029] like Figure 2f As shown, in step S6 above, when the second anode structure 8 and the third anode structure 9 are prepared on the transparent anode layer 3, patterning is first performed, then dry etching is performed, and then the second PR adhesive layer 5 is removed to form the second anode structure 8 and the third anode structure 9.

[0030] In step S6 above, the patterning is completed using the PH process.

[0031] In step S6 above, during dry etching, the thickness of the transparent anode layer 3 is controlled using either time-etching mode or EPD mode, leaving the required thickness of the transparent anode layer 3 for the structural requirements. Then, the second PR adhesive layer 5 (photoresist) is stripped. After the adhesive stripping is complete, the wafer is cleaned to remove the polymer, ultimately yielding the patterned pattern.

[0032] In step S7 above, after the third cleaning, coating, exposure, development, and curing, the third PR adhesive layer 6 formed on the first anode structure 7 completely covers the first anode structure 7, the third PR adhesive layer 6 formed on the second anode structure 8 completely covers the second anode structure 8, and the third PR adhesive layer 6 formed on the third anode structure 9 completely covers the third anode structure 9. For example... Figure 2g As shown, the third PR adhesive layer 6 covers a portion of the top surface of the first anode structure 7, another third PR adhesive layer 6 covers a portion of the top surface of the transparent anode layer 3, another third PR adhesive layer 6 covers a portion of the top surface of the second anode structure 8, and another third PR adhesive layer 6 covers a portion of the top surface of the third anode structure 9. The height of the top surface of the third anode structure 9 is greater than the height of the top surface of the second anode structure 8, and the height of the top surface of the second anode structure 8 is greater than the height of the top surface of the first anode structure 7.

[0033] like Figure 2h As shown, in step S8 above, patterning is first performed, followed by dry etching to create the first trench 10 and the second trench 11. Finally, the third PR adhesive layer 6 is removed. After the adhesive is removed, the wafer is cleaned to remove the polymer, ultimately yielding the patterned pattern.

[0034] In step S8 above, the patterning is completed using the PH process.

[0035] like Figure 2hAs shown, during dry etching, by etching the portion of the top surface of the first anode structure 7, the second anode structure 8, and the third anode structure 9 that is not covered by the third PR adhesive layer 6, trenches extending downward to the CMOS substrate 1 are formed on both sides of the first anode structure 7, trenches extending downward to the CMOS substrate 1 are formed on both sides of the second anode structure 8, and trenches extending downward to the CMOS substrate 1 are formed on both sides of the third anode structure 9.

[0036] The present invention also provides a silicon-based OLED microdisplay microcavity anode structure, which is formed using the above method.

[0037] The present invention has been described above by way of example with reference to the accompanying drawings. Obviously, the specific implementation of the present invention is not limited to the above-described manner. Any non-substantial improvements made using the inventive concept and technical solution; or the direct application of the inventive concept and technical solution to other situations without modification, are all within the protection scope of the present invention.

Claims

1. A method for fabricating a microcavity anode structure for a silicon-based OLED microdisplay, characterized in that, include: Fabrication of CMOS substrate; A metal anode layer is fabricated on a CMOS substrate, and a transparent anode layer is fabricated on the metal anode layer; The first cleaning, coating, exposure, development and curing are performed to form the first PR adhesive layer on the transparent anodized layer; A first anode structure is fabricated on a transparent anode layer; A second cleaning, coating, exposure, development and curing process is performed to form a second PR adhesive layer on the transparent anode layer and the first anode structure; A second anode structure and a third anode structure are fabricated on a transparent anode layer; A third cleaning, coating, exposure, development and curing process is performed to form a third PR adhesive layer on the transparent anode layer, the first anode structure and the second anode structure; A first trench and a second trench are etched on the transparent anode layer. The first trench is located between the first anode structure and the second anode structure, and the second trench is located between the second anode structure and the third anode structure. The first trench and the second trench extend to the CMOS substrate, and the third PR adhesive layer is removed.

2. The method for fabricating the microcavity anode structure of a silicon-based OLED microdisplay according to claim 1, characterized in that, The height dimensions of the third anode structure, the second anode structure, and the first anode structure change in a step-like manner.

3. The method for fabricating the microcavity anode structure of a silicon-based OLED microdisplay according to claim 1, characterized in that, A CMOS driving circuit is fabricated on a silicon wafer substrate to form the CMOS substrate.

4. The method for fabricating the silicon-based OLED microdisplay microcavity anode structure according to any one of claims 1 to 3, characterized in that, After cleaning the CMOS substrate, the metal anode layer and the transparent anode layer are prepared on the CMOS substrate using a metal sputtering machine.

5. The method for fabricating the silicon-based OLED microdisplay microcavity anode structure according to any one of claims 1 to 3, characterized in that, When fabricating the first anode structure on the transparent anode layer, the process involves first patterning, then dry etching, and finally removing the first PR adhesive layer to form the first anode structure.

6. The method for fabricating the microcavity anode structure of a silicon-based OLED microdisplay according to claim 5, characterized in that, The thickness of the transparent anode layer is controlled by using either time-etching mode or EPD mode during dry etching.

7. The method for fabricating the silicon-based OLED microdisplay microcavity anode structure according to any one of claims 1 to 3, characterized in that, After a second cleaning, coating, exposure, development and curing, the second PR adhesive layer formed on the first anode structure completely covers the first anode structure, while the second PR adhesive layer formed on the transparent anode layer does not completely cover the transparent anode layer.

8. The method for fabricating the silicon-based OLED microdisplay microcavity anode structure according to any one of claims 1 to 3, characterized in that, When fabricating the second anode structure and the third anode structure on the transparent anode layer, the process involves first patterning, then dry etching, and finally removing the second PR adhesive layer to form the second anode structure and the third anode structure.

9. The method for fabricating the microcavity anode structure of a silicon-based OLED microdisplay according to claim 8, characterized in that, The thickness of the transparent anode layer is controlled by using either time-etching mode or EPD mode during dry etching.

10. A silicon-based OLED microdisplay microcavity anode structure, characterized in that, Formed using the method described in any one of claims 1 to 9.

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