Process chamber and in-chamber cleaning method for a process chamber

Abstract

A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support, and a shield. The substrate support has a support surface spaced apart from the target backing plate by a distance to form a process cavity. The shield forms an outer boundary of the process cavity. A method of in-chamber cleaning is also described. In one embodiment, the method includes closing a bottom gas flow path of the processing chamber to the process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity via an opening in the shield, and exhausting the reactant gas from the process cavity.

Description

Technical Field

[0001] Embodiments of this disclosure relate to the field of electronic device manufacturing, and particularly to integrated circuit (IC) manufacturing. Specifically, embodiments of this disclosure relate to physical vapor deposition (PVD) apparatus and a method for cleaning the chamber of a PVD apparatus. Background Technology

[0002] During physical vapor deposition (PVD), materials including particulate matter and contaminants accumulate on process accessories (e.g., shielding, edge rings). Material formed on these accessories can contaminate wafers for subsequent processing, necessitating the removal and / or replacement of accessory components. Consequently, depositing thick hard films via PVD is challenging due to frequent preventative maintenance (PM), impacting wafer throughput and cost. Furthermore, meeting low-specification requirements with small particulate contamination is extremely difficult using existing hardware.

[0003] Each opening of the PVD chamber introduces contamination opportunities and throughput issues. The PVD chamber is opened when the target material is depleted and needs replacement. For each target life cycle, the PVD chamber is frequently opened multiple times to replace process accessory components.

[0004] Other methods for increasing the time between preventative maintenance include using heated shielding, texturing process components, applying different material coatings to metal parts to improve thermal expansion coefficient matching, and causing high-stress films to crack. However, even these methods can only operate on wafers smaller than 2K and still require frequent replacement of process components.

[0005] Many chemical vapor deposition (CVD) chambers use a remote plasma source (RPS) to clean and coat the chamber before running the deposition process. However, remote plasma source cleaning is not yet performed in PVD chambers due to the difficulty of protecting all the metal components inside.

[0006] Therefore, there is a need in the art for methods and apparatus that allow process components to operate throughout the entire life cycle of the target material. Summary of the Invention

[0007] One or more embodiments of this disclosure relate to a processing chamber. In some embodiments, the processing chamber includes: a target backplate in a top portion of the processing chamber; a substrate support in a bottom portion of the processing chamber, the substrate support having a support surface spaced apart from the target backplate to form a process cavity; a deposition ring positioned at an outer periphery of the substrate support, wherein the deposition ring has an outer portion having a contoured shape; and a shield forming an outer boundary of the process cavity, wherein the shield has a shield top in the top portion of the processing chamber and a shield bottom in the bottom portion of the processing chamber, the top positioned around the periphery of the target backplate and the bottom positioned around the periphery of the substrate support, the bottom including a contoured surface having a shape complementary to the outer portion of the deposition ring.

[0008] In some embodiments, the top portion of the processing chamber includes a top gas flow path between the periphery of the target backplate and the top of the shield.

[0009] In some embodiments, the bottom portion of the processing chamber includes a bottom gas flow path between the shield and the deposition ring.

[0010] Another embodiment of this disclosure relates to a chamber cleaning method. In some embodiments, the method includes: closing a bottom gas flow path from the processing chamber to a process chamber, the process chamber being defined by a substrate support, a target backplate, and a shield, when the processing chamber is in a process position; allowing inert gas to flow into the chamber from an inert gas inlet, wherein the chamber is defined by the substrate support, a grounding bracket, the shield, an adapter, and a chamber body; allowing reactants to flow into the process chamber from a reactant inlet through an opening in the shield; and discharging the reactants from the process chamber via a top gas flow path, wherein the top gas flow path is located within a top portion of the processing chamber and passes over the shield. Attached Figure Description

[0011] To gain a more detailed understanding of the features described above, reference can be made to embodiments of the present disclosure, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings illustrate only typical embodiments of the present disclosure and should not be considered as limiting the scope of the disclosure, as the present disclosure allows for other equally effective embodiments. The embodiments described herein are illustrated in the accompanying drawings by way of example rather than limitation, and like reference numerals denote similar elements in the drawings.

[0012] Figure 1 A schematic cross-sectional view of a physical vapor deposition chamber according to one or more embodiments of the present disclosure is shown;

[0013] Figure 2 A schematic cross-sectional view of a physical vapor deposition chamber according to one or more embodiments of the present disclosure is shown;

[0014] Figure 3 A schematic cross-sectional view of a physical vapor deposition chamber according to one or more embodiments of the present disclosure is shown;

[0015] Figure 4 A schematic cross-sectional view of a physical vapor deposition chamber according to one or more embodiments of the present disclosure is shown;

[0016] Figure 5 A schematic cross-sectional view of a physical vapor deposition chamber according to one or more embodiments of the present disclosure is shown;

[0017] Figure 6 A schematic cross-sectional view of a physical vapor deposition chamber according to one or more embodiments of the present disclosure is shown;

[0018] Figure 7 A schematic diagram showing a process chamber and gas flow path according to one or more embodiments of this disclosure is provided; and

[0019] Figure 8 A method for cleaning a cavity is shown according to one or more embodiments of the present disclosure.

[0020] In the accompanying drawings, similar parts and / or features may have the same reference numerals. Furthermore, various parts of the same type may be distinguished by adding a letter after the reference numeral to differentiate between similar parts. If only a first reference numeral is used in the specification, the description applies to any one of the similar parts having the same first reference numeral, regardless of any second reference numerals. Detailed Implementation

[0021] Before describing several exemplary embodiments of this disclosure, it should be understood that this disclosure is not limited to the details of the construction or process steps set forth in the following description. This disclosure can be implemented in other ways and can be practiced or performed in various manner.

[0022] This disclosure includes methods and apparatus for extending the lifespan of target materials for process accessories. In some embodiments, the method for extending the lifespan of the target material includes cleaning built-up material from an internally treated chamber component (e.g., a process accessory component) using a reactive substance. In some embodiments, cleaning includes selectively etching and / or sputtering the accumulated material from the internal component. In some embodiments, the accumulated material includes a deposited metal film and / or a deposited dielectric film. In some embodiments, the accumulated dielectric film includes a SiN film.

[0023] In one or more embodiments, the processing chamber is configured to extend the lifespan of the processing accessory. In some embodiments, the processing chamber generally operates for the full target lifespan of the processing accessory. In some embodiments, the processing chamber operates for a full target lifespan of 3600 KWHR SiN process (1500 Å film greater than 10 K).

[0024] Figure 1 A schematic diagram of a processing chamber 100 according to one or more embodiments of the present disclosure is shown. The processing chamber 100 includes a top portion 101, a bottom portion 102, and at least one process cavity 103 therebetween.

[0025] The top portion 101 includes a target backplate 105 facing the at least one process cavity 103. In some embodiments, the target backplate 105 comprises copper-chromium (CuCr). In some embodiments, the target backplate 105 supports a target 107 facing the process cavity 103. In some embodiments, the target comprises silicon or a silicon derivative. In some embodiments, the top portion 101 further includes a target bond 106. The target bond 106 supports attachment of the target 107 to the target backplate 105. The target bond 106 is located between the target backplate 105 and the target 107. The target bond 106 can be any suitable bonding material known to those skilled in the art. In some embodiments, the target bond 106 comprises indium or an indium derivative.

[0026] The bottom portion 102 includes a substrate support 110 having a support surface 111 spaced apart from the target backplate 105 to form a process cavity 103. In some embodiments, the distance is in the range of 50 mm to 100 mm, 52.5 mm to 100 mm, 55.5 mm to 100 mm, 50 mm to 80 mm, 52.5 mm to 80 mm, 55.5 mm to 80 mm, 50 mm to 60 mm, 52.5 mm to 60 mm, 55.5 mm to 60 mm, or 52.5 mm to 55.5 mm. In some embodiments, the process cavity 103 has a height of 52.5 mm.

[0027] In some embodiments, the substrate support 110 includes a mounting plate that supports a base and an electrostatic chuck. The electrostatic chuck (ESC) is protected from reactive gases in the process chamber 103 by an electrostatic chuck cover. In some embodiments, the electrostatic chuck (ESC) has a cover including a protective wafer. In some embodiments, when in cleaning mode, the protective wafer acts to protect the electrostatic chuck (ESC) from damage caused by reactive substances in the process chamber 103.

[0028] In some embodiments, the deposition ring 115 is positioned at the outer periphery 112 of the substrate support 110. The deposition ring 115 has an outer portion 116 with a shape conforming to the contour. In some embodiments, the deposition ring 115 comprises alumina or an alumina derivative.

[0029] The bottom portion 102 includes a grounding bracket 125 located below the substrate support 110, the deposition ring 115, and the shield 130. In some embodiments, the grounding bracket 125 is made of stainless steel. In some embodiments, the grounding bracket 125 is made of nickel-plated stainless steel.

[0030] The processing chamber 100 includes a shield 130. The shield 130 forms the outer boundary of the process chamber 103. In some embodiments, the shield 130 includes a shield tip 131 in a top portion 101 and a shield bottom end 132 in a bottom portion 102. In some embodiments, the shield 130 is a single component. In some embodiments, the shield tip 131 and the shield bottom end 132 are separate components and are fastened together by fasteners.

[0031] The shield tip 131 includes a shape complementary to the groove 108 of the target backplate 105. The top portion 101 of the processing chamber 100 includes a top gas flow path 133 between the groove 108 at the periphery of the target backplate 105 and the shield tip 131. In some embodiments, as shown, the target material attachment 106 extends along the contour of the groove 108 of the backplate 105.

[0032] The bottom end 132 of the shield is positioned around the outer periphery 112 of the substrate support 110. The bottom end 132 of the shield includes a contour-conforming surface 134 having a shape complementary to the outer portion 116 of the deposition ring 115. The bottom end 132 of the shield and the deposition ring 115 form a bottom gas flow path 139. In other words, the bottom gas flow path 139 extends between the contour-conforming surface 134 of the bottom end 132 of the shield and the contour-conforming surface 116 of the deposition ring 115.

[0033] In some embodiments, the bottom portion 102 of the processing chamber 100 includes a bottom gas flow path 139 between the bottom end 132 of the shield and the deposition ring 115.

[0034] Process chamber 100 includes heater 140. In some embodiments, heater 140 acts as a large heat mass to maintain the temperature within process chamber 103. Heater 140 is located on the outer periphery of the bottom end 132 of the shield. Heater 140 functions to increase the heat mass capacity of process chamber 100. In some embodiments, heater 140 functions to maintain the temperature of shield 130 within the range of 150°C to 250°C or 200°C to 250°C.

[0035] Processing chamber 100 includes an adapter 145. The adapter 145 is located at the outer periphery of the top portion 101, contacting and optionally supporting the target backplate 105 and / or the target mating portion 106. In some embodiments, the adapter 145 extends to the heater 140. In some embodiments, the adapter 145 includes a plenum 146 fluidly connected to the process chamber 103 via a space 152 between the top portion 101 and the shield. In some embodiments, the adapter 145 comprises aluminum.

[0036] In one or more embodiments, the processing chamber 100 includes a roughing line 147 connected to a switching valve manifold 148. In some embodiments, a gas chamber 146 is operatively connected to the roughing line 147 having the switching valve manifold 148. The switching valve manifold 148 is connected to a roughing pump 162. The switching valve manifold 148 is configured to allow airflow from the process chamber 103 via a top flow path 133 and a space 152 to the roughing pump 162 when the switching valve manifold 148 is open, and to prevent flow to the roughing pump 162 when the switching valve manifold 148 is closed. In some embodiments, the processing chamber 100 is configured to allow airflow into the process chamber 103 via the top flow path 133 when the switching valve manifold 148 is closed. In some embodiments, the switching valve manifold 148 is open when in a cleaning mode.

[0037] In one or more embodiments, the processing chamber 100 includes a removal assembly 163 connected to a coarse pump 162. In a cleaning mode, the coarse pump 162 removes gas from the process chamber 103 toward the removal assembly 163 via a top gas flow path 133. In one or more embodiments, the processing chamber 100 includes a discharge assembly 164 connected to the removal assembly 163. In some embodiments, the discharge assembly 164 includes a housing discharge section. In a cleaning mode, the discharge assembly 164 removes gas from the removal assembly 163 and the processing chamber 100.

[0038] Processing chamber 100 includes a chamber body 150 that forms an internal volume 151 within the processing chamber. The top of the internal volume 151 is enclosed by a top portion 101, a bottom portion 102, and a process chamber 103. In some embodiments, the chamber body 150 supports an adapter 145 from below. The internal volume 151 houses a substrate support 110, a grounding bracket 125, a shield 130, and the adapter 145 within the chamber body 150. A bottom gas flow path 139 fluidly connects the process chamber 103 to the internal volume 151 via a space between the shield 130 and the deposition ring 115. In some embodiments, the chamber body 150 is made of stainless steel.

[0039] The processing chamber 100 includes a containment O-ring 155 located between the bottom end 132 of the shield and the adapter 145. The containment O-ring 155 serves to prevent any fluid contact between the top gas flow path 133 and the internal volume 151 and / or the heater 140 via the space between the shield 130 and the adapter 145. In some embodiments, the containment O-ring 155 resists fluorine radicals and / or fluorine sputtering.

[0040] The bottom portion 102 includes a shaft 153 and a hoop lift component 154. A base plate support 110 and a grounding bracket 125 are positioned on the shaft 153. The shaft 153 is operatively connected to the hoop lift component 154. In some embodiments, the hoop lift component 154 moves the bottom portion 102 up or down.

[0041] In one or more embodiments, the processing chamber 100 includes an inert gas inlet 157. The inert gas inlet 157 functions to maintain a positive pressure in the internal volume 151. This positive pressure prevents any gas from leaking from the process chamber 103 or the space between the shield 130 and the adapter 145 into the internal volume 151. In some embodiments, the inert gas includes argon, nitrogen (N2), or a combination of the above. In some embodiments, the inert gas further includes a protective gas. In some embodiments, the protective gas includes oxygen (O2) or hydrogen (H2).

[0042] In one or more embodiments, the processing chamber 100 includes a turbopump housing 168, which is in fluid communication with the process chamber 103 via a bottom flow path 139.

[0043] In one or more embodiments, the processing chamber 100 includes a process gas inlet 158. The process gas inlet 158 ​​includes a process gas inlet valve 149. In some embodiments, a process gas reservoir (not shown) is connected to the process gas inlet valve 149. When in deposition mode, the processing chamber 100 is configured to allow process gas flow through a top gas flow path 133, the process chamber 103, and a bottom gas flow path 139. In some embodiments, the process gas inlet 158 ​​may be used to deliver reactants to the process chamber 103 via the top gas flow path 133.

[0044] In one or more embodiments, the processing chamber 100 includes a reactant inlet 159, which includes a reactant inlet path 160 and a reactant inlet valve 161. The reactant inlet valve 161 is in fluid communication with the process chamber 103 via a top flow path 133. Figure 2 An embodiment of a processing chamber 100 is shown, wherein the processing chamber 100 includes a reactant inlet path 160. According to... Figure 2In one embodiment, the reactant inlet path 160 passes through the adapter 145 and leads to the process chamber 103 via a hole between the top end 131 and the bottom end 132 of the shield. In some embodiments, the processing chamber 100 includes more than one reactant inlet 159. In some embodiments, the processing chamber 100 includes at least two reactant inlets 159. In some embodiments, the processing chamber 100 includes two reactant inlets 159 spaced 90° apart. In some embodiments, the reactant inlets 159 are made of stainless steel.

[0045] In some embodiments, reactant inlet 159 is connected to a reactant gas reservoir (not shown). In some embodiments, reactant inlet path 160 is connected to the reactant gas reservoir via reactant inlet valve 161. In some embodiments, when in clean mode, reactant inlet valve 161 is opened, thereby establishing fluid communication between process chamber 103 and reactant gas reservoir. In some embodiments, when in deposition mode, reactant inlet valve is closed, thereby disconnecting fluid communication between process chamber 103 and reactant gas reservoir.

[0046] In another embodiment of this disclosure, reactant inlet 159 is connected to a remote plasma source (not shown). In some embodiments, reactant inlet path 160 is connected to the remote plasma source via reactant inlet valve 161. In some embodiments, reactant inlet valve 161 is opened in clean mode, thereby establishing fluid communication between process chamber 103 and the remote plasma source. In some embodiments, reactant inlet valve is closed in deposition mode, thereby disconnecting the fluid communication between process chamber 103 and the remote plasma source.

[0047] Figure 3 and Figure 4 This illustration shows embodiments of the present disclosure when the processing chamber 100 is in process mode and cleaning mode, respectively. Accordingly, in some embodiments, the bottom portion 102 includes a sealing bracket 120. The sealing bracket 120 is positioned on the side of the substrate support 110 opposite to the target backplate 105, such that the deposition ring 115 is between the target backplate 105 and the sealing bracket 120. In some embodiments, the sealing bracket 120 comprises nickel-plated stainless steel. In some embodiments, a grounding bracket 125 is located below the sealing bracket 120. In some embodiments, the sealing bracket 120 is fastened to the grounding bracket 125 via fasteners 126. In some embodiments, the fasteners 126 comprise stainless steel.

[0048] In some embodiments, the processing chamber 100 includes a bellows assembly 138 connected to or in contact with the shield 130. In some embodiments, the bellows assembly 138 is located on the outer periphery of the shield 130 and below the bottom end 132 of the shield. The bellows assembly 138 includes a top bellows flange 135, a bellows 136, and a bottom bellows flange 137. The top bellows flange 135 is located below the bottom end 132 of the shield, near a contour-conforming surface on the outer side of the bottom end 132 of the shield. The top bellows flange 135 and the bottom bellows flange 137 support the bellows 136 therebetween. In some embodiments, one or more of the top bellows flange 135 and the bottom bellows flange 137 comprise nickel-plated stainless steel.

[0049] In one or more embodiments, the processing chamber 100 includes an elastomeric sealant between a top bellows flange 135 and a shield bottom end 132. In some embodiments, the elastomeric sealant prevents reactants from leaking into the internal volume 151 via the space between the top bellows flange 135 and the shield bottom end 132. In some embodiments, the elastomeric sealant resists fluorine radicals and / or fluorine sputtering.

[0050] In some embodiments, the bottom gas flow path 139 further includes a gap 141 between the sealing support 120 and the bellows assembly 138. Accordingly, in some embodiments, the bottom gas flow path 139 fluidly connects the process chamber 103 to the internal volume 151 via the space between the shield 130 and the deposition ring 115 and the space between the sealing support 120 and the bellows assembly 138.

[0051] Figure 3 This illustration shows an embodiment where process chamber 103 is fluidly connected to internal volume 151 via bottom gas flow path 139. In some embodiments, deposition ring 115 and sealing support 120 are located at process positions (e.g., ...). Figure 3 (as shown) and cleaning locations (such as) Figure 4 The sealing support 120 and the deposition ring 115 are movable between the two parts (shown in the diagram). In the process position, a gap 141 exists between the sealing support 120 and the deposition ring 115, and in the clean position, the sealing support 120 contacts the bellows assembly 138. In some embodiments, the ring lifting member 154 moves its bottom portion 102 upward so that the sealing support 120 contacts the bottom bellows flange 135, thereby sealing the process cavity 103. The ring lifting member 154 moves its bottom portion 102 downward so that the sealing support 120 does not contact the bottom bellows flange 137, thereby opening the bottom gas flow path 139. Figure 4 A sealed process chamber 103 is shown, wherein fluid exchange between the process chamber 103 and the internal volume 151 via the bottom gas flow path 139 is prevented.

[0052] Accordingly, in some embodiments, when the sealing support 120 and the deposition ring 115 are in the process position, the turbopump housing 168 is in fluid communication with the process chamber 103 via the bottom flow path 139. When the sealing support 120 and the deposition ring 115 are in the clean position, the turbopump housing 168 is isolated from the process chamber 103 via the bottom gas flow path.

[0053] Figure 5 and Figure 6 Another embodiment of this disclosure is shown, wherein the process cavity includes a shutter disk 156. In some embodiments, the shutter disk 156 is located below the shield 130. In some embodiments, one or more of the substrate support 110, deposition ring 115, or electrostatic chuck (ESC) are movable between a process position and a clean position. In some embodiments, the shutter disk 156 acts to disconnect the fluid connection between the process cavity 103 and the internal volume 151 when the bottom portion 102 is in the internal volume 151. In some embodiments, the ring lifting member 154 moves one or more of the substrate support 110, deposition ring 115, or electrostatic chuck (ESC) downward into the internal volume 151. In some embodiments, the shutter disk 156 acts to disconnect the fluid connection between the process cavity 103 and the internal volume 151 when one or more of the substrate support 110, deposition ring 115, or electrostatic chuck (ESC) are in the internal volume 151. In some implementations, such as Figure 5 As shown, when in the process position, the baffle plate 156 moves horizontally outward to move the substrate support 110 upward and form the process cavity 103. In some embodiments, such as Figure 6 As shown, when in the clean position, the substrate support 110 moves downward to disconnect the fluid connection between the substrate support 110 and the process cavity 103 by the baffle plate 156. In some embodiments, the ring lifting member 154 moves its bottom portion 102 downward to disconnect the fluid connection between the substrate support 110 and the process cavity 103 by the baffle plate 156. In some embodiments, the baffle plate 156 slides horizontally to move the bottom portion 102 upward by the ring lifting member 154 so that the substrate support 110 forms the process cavity 103.

[0054] In some embodiments, one or more of the following components resist fluorine radicals and / or fluorine sputtering: shield 130, bellows assembly 138, target backplate 105, substrate support 110, deposition ring 115, sealing bracket 120, chamber body 150, electrostatic chuck (ESC), baffle plate 156, shaft 153, ring hoop lifting component 154, roughing line 160, target 107, target joint 106, O-ring 155, turbopump housing 168, elimination assembly 163, or emission assembly 164.

[0055] In some embodiments, one or more of the following components are made of aluminum, alumina, yttrium oxide and / or nickel plating (SSL): shield 130, bellows assembly 138, target backplate 105, substrate support 110, deposition ring 115, sealing bracket 120, chamber body 150, electrostatic chuck (ESC), baffle plate 156, shaft 153, ring lifting component 154, coarse extraction line 147, target 107, target joint 106, O-ring 155, turbopump housing 168, elimination assembly 163 or emission assembly 164.

[0056] Figure 7 A schematic diagram of a process chamber and gas flow path according to one or more embodiments of this disclosure is shown. In some embodiments, gas chamber 146 is fluidly connected to roughing pump 162 via upper gate valve 702 and throttle valve 704. In some embodiments, pressure gauge 703 and / or pressure gauge 707 are positioned along the flow path. When upper gate valve 702 and throttle valve 704 are open, gas flows to roughing pump 162 along outlet path 705. In some embodiments, the outlet path includes outlet valve 720. When upper gate valve 702 and / or throttle valve 704 are closed, gas flows to roughing pump 162 via roughing line 147 or turbopump housing 168. In some embodiments, internal volume 151 is operatively connected to turbopump housing 168 via lower gate valve 718. If lower gate valve 718 is closed, gas flows directly to roughing pump 162 via roughing line 147 and on / off valve manifold 148. When the lower gate valve 718 is open, gas flows through the lower gate valve 718 and the turbopump housing 168, then through the turbopump housing outlet 725 and the switching valve manifold 148 to the roughing pump 162. The switching valve manifold 148 can be used to control whether the gas flows to the roughing pump 162 through the roughing line 147 or through the turbopump housing 168 via the switching valve manifold connector path 730. The gas flows from the roughing pump 162 to the purging assembly 163. Subsequently, the gas flows from the purging assembly 163 to the discharge assembly 164 and is discharged. In some embodiments, the turbopump housing 168 includes a turbopump.

[0057] Another aspect of this disclosure provides a method for cleaning a cavity. Figure 8An embodiment of the chamber cleaning method 800 is shown. According to... Figure 8 Method 800 includes closing the bottom gas flow path 139 at block 801; allowing inert gas to flow from an inert gas inlet in the internal volume 151 at block 802 to maintain positive pressure in the internal volume 151; allowing reactants to flow from a reactant inlet into the process chamber 103 through an opening in the shield 130 at block 803; and discharging reactants from the process chamber through a top gas flow path 133 at block 804.

[0058] In one or more embodiments, during block 801, the sealing bracket 120 moves a certain distance (e.g., approximately 2.5 mm vertically) to contact the bellows assembly 138, thereby closing the bottom gas flow path 139. In some embodiments, after operation 801, the distance between the target 107 and the substrate support 110 is in the range of 50 mm to 100 mm, 52.5 mm to 100 mm, 55.5 mm to 100 mm, 50 mm to 80 mm, 52.5 mm to 80 mm, 55.5 mm to 80 mm, 50 mm to 60 mm, 52.5 mm to 60 mm, 55.5 mm to 60 mm, or 52.5 mm to 55.5 mm. In some embodiments, after operation 801, the distance between the target 107 and the substrate support 110 is 55.5 mm.

[0059] In one or more embodiments, during block 801, the bottom portion 102 is moved downward to the internal volume 151, and the baffle plate 156 is moved horizontally to disconnect the fluid connection between the process cavity 103 and the internal volume 151.

[0060] In one or more embodiments, operation 802 includes allowing Ar, N2, or a combination of the above to flow into the internal volume 151 to maintain positive pressure. In some embodiments, the positive pressure is in the range of 2 to 3 Torr.

[0061] In one or more embodiments, one or more operations of method 800 are performed within process cavity 103. -3 millitor to 3 to 10 -3 millitor to 2 tor, 10 -3 millitor to 1 tor, 10 -3 millitor to 800 millitor, 10 -3 milliton to 600 milliton, 10 -3 millitor to 400 millitor, 10 -3 millitor to 200 millitor, 10 -3 millitor to 100 millitor, 10 -3 millitor to 1 millitor, 10 -3 millitons to 10-2 50 mmol / L to 3 mmol / L, 50 mmol / L to 2 mmol / L, 50 mmol / L to 1 mmol / L, 50 mmol / L to 800 mmol / L, 50 mmol / L to 600 mmol / L, 50 mmol / L to 400 mmol / L, 50 mmol / L to 200 mmol / L, 50 mmol / L to 100 mmol / L, 100 mmol / L to 3 mmol / L, 100 mmol / L to 2 mmol / L, 100 mmol / L to 1 mmol / L, 100 mmol / L to 800 mmol / L, 100 mmol / L to 600 mmol / L, 100 mmol / L to 400 mmol / L, 100 mmol / L to 200 mmol / L, 200 mmol / L to 3 mmol / L, 200 mmol / L to 2 mmol / L, 200 mmol / L to 2 mmol / L, 200 mmol / L to 2 mmol / L The cleaning process is performed independently at pressures ranging from 1 to 1 to, 200 to 800 to, 200 to 600 to, 200 to 400 to, 400 to 3 to, 400 to 2 to, 400 to 1 to, 400 to 800 to, 400 to 600 to, 600 to 3 to, 600 to 2 to, 600 to 1 to, 600 to 800 to, 800 to 3 to, 800 to 2 to, 800 to 1 to, or 1 to 3 to. In some embodiments, during cleaning, the pressure in the chamber is greater than the pressure in process chamber 103. In some embodiments, during cleaning, the pressure in the chamber is greater than the pressure in process chamber 103 by an amount ranging from 1 to 3 to.

[0062] In some embodiments, during operation 803, the shield 130 is maintained at a temperature in the range of 150°C to 250°C or 200°C to 250°C. In some embodiments, the heater 140 acts to maintain the shield 130 at a temperature in the range of 150°C to 250°C or 200°C to 250°C. In some embodiments, a temperature of 150°C to 250°C for the shield 130 facilitates the removal of deposited material. In some embodiments, during operation 803, the substrate support 110 is maintained at a temperature in the range of 150°C to 250°C or 200°C to 250°C. In some embodiments, during operation 803, the target 107 is maintained at temperatures in the ranges of 30°C to 65°C, 40°C to 65°C, 50°C to 65°C, 30°C to 60°C, 40°C to 60°C, and 50°C to 60°C.

[0063] In one or more embodiments, operation 803 includes flowing reactants into process chamber 103. In some embodiments, the reactants include fluorine radicals. In some embodiments, fluorine radicals are generated by NF3. In some embodiments, operation 804 selectively etches the deposited material. In some embodiments, selective etching is performed with fluorine radicals. In some embodiments, fluorine radicals are generated by thermal methods from NF3 within process chamber 100. In some embodiments, fluorine radicals are formed by applying an RF bias to NF3. In some embodiments, the chamber cleaning method further includes applying a bias to a substrate support. In some embodiments, the chamber cleaning method further includes applying a bias to a base. In some embodiments, fluorine radicals are generated at 13.54 MHz (<1 kW) radio frequency (RF). In some embodiments, fluorine radicals are generated by applying a bias in the range of 500 W to 1000 W. In some embodiments, fluorine radicals are generated by applying a 1000 W bias.

[0064] In some embodiments, the reactants include a reactant gas. In some embodiments, the reactant gas flows into process chamber 103 at a dose of 1 to 3 liters. In some embodiments, the reactant gas includes one or more of NF3, oxygen (O2), hydrogen (H2), or argon (Ar). In some embodiments, when in clean mode, 1 liter of NF3 flows into process chamber 103. In some embodiments, when in clean mode, 3 liters of one or more of hydrogen (H2), oxygen (O2), or argon (Ar) flows into process chamber 103. In some embodiments, the reactant gas includes NF3 and one or more of O2, H2, or Ar. In some embodiments, the reactant gas includes NF3 and H2, wherein the NF3:H2 ratio is in the range of 1:1 to 1:3. In some embodiments, the reactant gas includes NF3 and O2, wherein the NF3:O2 ratio is in the range of 1:1 to 1:3. In some embodiments, argon co-flows with one or more of NF3, H2, or O2.

[0065] In one or more embodiments, the reactant gas further includes a carrier gas. In some embodiments, the carrier gas includes an inert gas. In some embodiments, the inert gas includes Ar. In some embodiments, the inert gas includes He.

[0066] In some embodiments, the reactants include fluorine radicals generated in a remote plasma source. In some embodiments, the method includes selectively sputtering deposited material. In some embodiments, selective sputtering is performed with fluorine radicals. In some embodiments, the fluorine radicals are injected via reactant inlet 159. In some embodiments, when in clean mode, reactant inlet valve 161 is opened, thereby establishing fluid communication between process chamber 103 and the remote plasma source. In some embodiments, when in deposition mode, reactant inlet valve 161 is closed.

[0067] In some embodiments, at block 804, the reactants exit the process chamber 103 via a top gas flow path 133 through a gas chamber 146. In some embodiments, the gas chamber 146 is operatively connected to an exhaust assembly 164 via a coarse pump 162 and / or a scavenging assembly 163.

[0068] In some embodiments, the chamber cleaning method further includes coating one or more of the following components with a coating material: shield 130, bellows assembly 138, target backplate 105, substrate support 110, deposition ring 115, sealing bracket 120, chamber body 150, electrostatic chuck (ESC) pad, shaft 175, ring lifting component 177, turbopump housing 180, roughing line 147, target 107, target joint 106, sealing O-ring 155, effluent assembly 164, or elimination assembly 163. In some embodiments, the coating material includes ZrO2, AlO2, etc. x Y2O3 or a combination of the above. In some embodiments, the coating material includes YF, YOF, AlOF, ZrO2F, ZrO2, AlO x Y2O3 or a combination of the above items.

[0069] In some embodiments, accumulated material in the treatment chamber 100 is removed by an intracavitary cleaning method. In some embodiments, the intracavitary cleaning method is performed once every 300 kWh. In some embodiments, the intracavitary cleaning method is performed 10 times per target. In some embodiments, the intracavitary cleaning method is performed every 3-4 days.

[0070] In some implementations, the chamber cleaning method reduces the particle size of the deposited material to the range of 20 nm to 10 μm.

[0071] In some embodiments, the chamber cleaning method extends the target lifespan of the process components. In some embodiments, the chamber cleaning method further includes adjusting process parameters. In some embodiments, process parameters include magnetoduct tuning, reactant injection, concentric gas conduction paths, or combinations thereof. In some embodiments, process parameters include the spacing between the target and the protective wafer (or substrate support), magnetoduct tuning, pressure within the process chamber, Ar to N2 ratio, or DC power.

[0072] In some implementations, the process chamber 103 is cleaned using in-situ RF NF3 cleaning and / or remote plasma source fluorine radical cleaning in PVD without opening the processing chamber 100 and maintaining good particle quality.

[0073] In the foregoing description, embodiments of the present disclosure have been described with reference to specific exemplary embodiments thereof. It will be apparent that various modifications may be made to embodiments of the present disclosure without departing from the broader spirit and scope of the embodiments set forth in the following claims. Accordingly, the description and drawings should be considered illustrative rather than restrictive.

Claims

1. A processing chamber, comprising: A target backplate, the target backplate being located in the top portion of the processing chamber; A substrate support is located in the bottom portion of the processing chamber, the substrate support having a support surface spaced apart from the target backplate to form a process cavity; A deposition ring is positioned at the outer periphery of the substrate support, the deposition ring having an outer portion having a shape conforming to the contour; A shielding material forms the outer boundary of the process chamber. The shielding material has a top shielding material in the top portion of the processing chamber and a bottom shielding material in the bottom portion of the processing chamber. The top shielding material is positioned around the periphery of the target backplate and the bottom shielding material is positioned around the periphery of the substrate support. The bottom shielding material includes a contour-conforming surface having a shape complementary to the outer portion of the deposition ring. and A baffle plate is positioned below the shielding material, wherein the substrate support and the baffle plate are movable between a process position and a cleaning position. In the process position, the baffle plate moves horizontally outward to move the substrate support upward and form the process cavity. In the cleaning position, the substrate support moves downward to disconnect the fluid connection between the substrate support and the process cavity. The top portion of the processing chamber includes a top gas flow path between the periphery of the target backplate and the top of the shield. The bottom portion of the processing chamber includes a bottom gas flow path between the shield and the deposition ring.

2. The processing chamber of claim 1, further comprising a turbopump housing, the turbopump housing being in fluid communication with the process chamber via the bottom gas flow path when in the process position, and isolated from the process chamber via the bottom gas flow path when in the clean position.

3. The processing chamber of claim 1, further comprising a coarse pump, the coarse pump being in fluid communication with the process chamber via the top gas flow path.

4. The processing chamber of claim 3, further comprising a coarse extraction valve between the coarse extraction pump and the process chamber, the coarse extraction valve being configured to allow airflow from the process chamber to the coarse extraction pump via the top gas flow path when the coarse extraction valve is opened, and to prevent flow to the coarse extraction pump when the coarse extraction valve is closed.

5. The processing chamber of claim 4, wherein the processing chamber is configured to allow gas flow into the process chamber via the top gas flow path when the coarse extraction valve is closed.

6. The processing chamber of claim 2, wherein one or more of the shield, the target backplate, the substrate support, the deposition ring, the baffle plate, or the turbopump housing resist fluorine radicals and / or fluorine sputtering.

7. A method for cleaning an interior chamber of the processing chamber according to claim 1, comprising the following steps: When the processing chamber is in the process position, the bottom gas flow path from the processing chamber to the process chamber is closed, wherein the processing chamber further includes a chamber body that forms the internal volume of the processing chamber; Inert gas is allowed to flow from the inert gas inlet into the internal volume of the processing chamber; The reactants flow from the reactant inlet into the process chamber through an opening in the shielding material; and The reactants are discharged from the process chamber via the top gas flow path. The step of closing the bottom gas flow path includes the following steps: The substrate support is moved downwards into the internal volume of the processing chamber; and The baffle plate is slid from below the shield into the process cavity to disconnect the internal volume from the process cavity.

8. The method of claim 7, wherein the reactants comprise fluorine radicals, hydrogen, oxygen, or a combination thereof.

9. The method of claim 7, wherein one or more of the following are maintained: the target material supported by the target backplate is maintained at a temperature in the range of 40°C to 65°C, the substrate support is maintained at a temperature in the range of 200°C to 250°C, or the shield is maintained at a temperature in the range of 200°C to 250°C.

10. The method of claim 8, wherein the fluorine radical is formed by applying an RF bias to NF3.

11. The method of claim 7, wherein introducing the reactant into the process chamber further comprises: The reactants are circulated in the process chamber at a pressure ranging from 100 mTorr to 1 Torr.

12. The method of claim 7, wherein allowing the inert gas to flow into the internal volume of the processing chamber further comprises: The inert gas is allowed to flow into the internal volume of the processing chamber at a pressure ranging from 2 to 3 Torr.

13. The method of claim 7, wherein the reactant comprises a fluorine radical, and the fluorine radical is generated by NF3 in a remote plasma source.

14. The method of claim 7, further comprising the following steps: One or more of the substrate support, the shielding material, the deposition ring, or the target backplate are coated with a coating material selected from the group consisting of: YOF, AlOF, ZrO2, AlO x Or Y2O3.

15. The method of claim 7, wherein the method removes accumulated material from the internal components of the processing chamber, and wherein the accumulated material comprises SiN or a derivative of SiN.

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