Low-dimensional material device based on metal nanoparticle electrode and manufacturing method and application thereof

Abstract

The application discloses a low-dimensional material device based on a metal nanoparticle electrode, a manufacturing method and application. The low-dimensional material device with the metal nanoparticle electrode is obtained by transferring a low-dimensional nanomaterial to a substrate layer, spin-coating a polymer precursor solution to the substrate layer, adding a metal salt-acetonitrile solution dropwise, and performing a laser direct writing operation. The low-dimensional material device manufactured by the method has simple process, and the photoetching, developing and sputtering steps in the processing of traditional low-dimensional material micro-nano devices are omitted, so that the method is convenient and simple, and can be applied to the processing of various micro-nano devices and has universality.

Description

Technical Field

[0001] This invention relates to the field of advanced electronic component design and manufacturing, and in particular to a low-dimensional material device based on metal nanoparticle electrodes, its manufacturing method, and its application. Background Technology

[0002] With the development of micro-nano technology, low-dimensional material micro-nano devices have been widely used in many fields. The research and fabrication of metal micro-nano structures and devices has also become one of the hot topics in low-dimensional materials research, with the fabrication of micro-nano devices being the most fundamental and important aspect. Technologies related to the fabrication of metal micro-nano structures and devices include traditional processing techniques such as photolithography, focused ion beam (FIB), electron beam lithography (EBL), and magnetron sputtering. While these methods can achieve the fabrication of metal micro-nano structures, they have certain shortcomings. First, the fabrication process is complex, requiring the use of various instruments and equipment, and is costly. Second, the micro-nano fabrication process can cause some damage to the material surface, easily introducing impurities and defects, which can affect the material's properties. Traditional micro-nano fabrication methods require multiple steps to fabricate electrodes, resulting in long fabrication cycles, low production efficiency, and difficulty in large-scale application.

[0003] Currently, most low-dimensional material micro / nano devices on the market are fabricated using micro / nano fabrication methods and require rigid substrates; it is not possible to directly fabricate micro / nano devices on flexible substrates. Metal nanoparticles, as materials with high stability, excellent electrical properties, and unique optical properties, have wide applications in materials science, electronics, and optics, attracting considerable research interest. Nanocomposite materials containing metal nanoparticles have always been of great interest due to their unique properties. By precisely controlling the distribution, morphology, and geometry of metal nanoparticles in polymers through laser direct writing, metal nanoparticle composite electrodes can be directly written onto flexible substrates, enabling the rapid fabrication of low-dimensional flexible devices. Summary of the Invention

[0004] To address the problems and shortcomings of the prior art, this invention provides a low-dimensional material device based on metal nanoparticle electrodes, its manufacturing method, and its application. It solves the problems caused by existing micro / nano fabrication techniques, such as damage to the material surface and the easy introduction of impurities and defects. This invention enables the rapid fabrication of metal nanoparticle electrodes, facilitating the simple preparation of low-dimensional material devices.

[0005] The technical solution adopted in this invention is:

[0006] I. A method for fabricating low-dimensional material devices based on metal nanoparticle electrodes

[0007] The method includes the following steps:

[0008] 1) Transferring low-dimensional nanomaterials onto a substrate layer to obtain a substrate layer with low-dimensional nanomaterials;

[0009] 2) After mixing the photoresist and polyetheramine, a polymer precursor solution is obtained. The metal salt is dissolved in the organic solvent acetonitrile to obtain a metal salt-acetonitrile solution.

[0010] 3) After spin-coating the polymer precursor solution onto the substrate layer with low-dimensional nanomaterials, a metal salt-acetonitrile solution was added dropwise to obtain sample I;

[0011] 4) Perform laser direct writing on sample I to obtain sample II with metal nanoparticle electrodes. Place sample II in acetonitrile to obtain a low-dimensional material device with metal nanoparticle electrodes.

[0012] In step 1), the low-dimensional nanomaterial is a one-dimensional or two-dimensional nanomaterial at the micrometer level. The one-dimensional nanomaterial includes one-dimensional CdSSe nanowires, one-dimensional CdS nanowires, and one-dimensional CdSe nanowires. The two-dimensional material includes few-layer molybdenum disulfide (MoS2), molybdenum selenide (MoSe2), and two-dimensional tellurium (Te). The substrate material is one of polyimide, polyethylene terephthalate, and glass. The diameter of the one-dimensional nanomaterial ranges from 450 nm to 550 nm, and the thickness of the two-dimensional nanomaterial ranges from 5 to 30 nm.

[0013] Step 1) specifically involves transferring one-dimensional nanomaterials onto a substrate layer via optical fiber transfer or transferring two-dimensional nanomaterials onto a substrate layer via liquid dissociation, thereby obtaining a substrate layer containing low-dimensional nanomaterials.

[0014] In step 2), the photoresist is one of SU8 2000.5 photoresist, SU-8 2002 photoresist, and SU82005 photoresist; the polyetheramine is one of polyetheramine D230 and polyetheramine D2000; the mass ratio of the photoresist to the polyetheramine is 150–300:1; and the solubility range of the metal salt-acetonitrile solution is 25 × 10⁻⁶. -3 mol / L~100×10 -3 mol / L.

[0015] Step 3) specifically involves: spin-coating the polymer precursor solution onto a substrate layer containing low-dimensional nanomaterials, performing a spin coating operation with spin coating parameters set to 500 rpm for 10 seconds and 3000 rpm for 40 seconds, and then heating and curing at 90 degrees Celsius to obtain a substrate layer containing the polymer precursor and low-dimensional nanomaterials. A metal salt-acetonitrile solution is then added dropwise to the polymer precursor on the substrate layer and left for 5 minutes to allow the metal salt-acetonitrile solution to diffuse into the polymer precursor, resulting in sample I. The structure of sample I, from top to bottom, consists of a polymer layer containing the metal salt-acetonitrile solution, a low-dimensional material layer, and a substrate layer.

[0016] Step 4) specifically involves: placing sample I on the laser operating stage, locating the polymer layer containing the metal salt-acetonitrile solution using a microscope, and performing laser direct writing on the polymer layer containing the metal salt-acetonitrile solution in sample I according to a preset pattern to obtain sample II. The metal salt-acetonitrile solution is reduced to metal nanoparticles in the laser focusing area, and the metal nanoparticles are fixed in the polymer precursor to form metal nanoparticle electrodes. The shape of the electrodes can be directly drawn in the laser operating system, or the required pattern can be designed in advance and transferred to the operating system for operation. Sample II is placed in acetonitrile to wash away the unwanted chloroauric acid solution, resulting in a low-dimensional material device with metal nanoparticle electrodes.

[0017] In step 2), the metal in the metal salt solution is one of gold, silver, or copper.

[0018] II. Low-dimensional material devices fabricated using methods based on metal nanoparticle electrodes

[0019] The device has a layered structure, consisting of a polymer layer with embedded metal nanoparticle electrodes, a low-dimensional material layer, and a substrate layer from top to bottom.

[0020] III. The low-dimensional material devices prepared by the method of fabricating low-dimensional material devices based on metal nanoparticle electrodes are used for the application of photoelectric detectors.

[0021] Metal nanoparticle electrodes can be directly written onto low-dimensional materials using laser direct writing. As the laser scans, the metal nanoparticles are positioned and assembled into the desired shapes and patterns, connecting together through physical contact and chemical bonds to form continuous conductive paths. This method allows for more uniform electrode formation on low-dimensional material surfaces, providing a larger contact area, effectively reducing contact resistance, and improving contact performance. Laser direct writing avoids the complexity of multi-step fabrication and subsequent electrode processing required in traditional micro / nano fabrication methods, enabling rapid in-situ electrode fabrication. It also solves the problems of complex processes, surface damage, and the introduction of impurities and defects inherent in traditional methods.

[0022] The beneficial effects of this invention are:

[0023] 1. This invention can produce different patterns at different positions by adjusting the laser, with a minimum line width of 3μm, and is innovative, highly precise and controllable.

[0024] 2. It is easy to operate and the process is simple. It eliminates the steps of photolithography, development, sputtering and other processes in the traditional low-dimensional material micro-nano device processing. It is convenient and simple and can be applied to the processing of various micro-nano devices, and has universality.

[0025] 3. Improve device stability and electrical performance. The prepared metal nanoparticle electrodes have good reliability, flexibility and protection, effectively improve the device's resistance to wear and aging, extend its service life, effectively reduce contact resistance, improve the device's conductivity, and have better application prospects. Attached Figure Description

[0026] Figure 1 This is a schematic diagram of the structure of the low-dimensional material device of the present invention;

[0027] Figure 2 This is a structural design diagram of the low-dimensional material device of the present invention;

[0028] Figure 3 This is a diagram illustrating the specific implementation process of a low-dimensional material device based on nanoparticle electrodes.

[0029] Figure 4 This is a schematic diagram of a cross-section of a low-dimensional material device based on nanoparticle electrodes.

[0030] Figure 5 The photoresponse curve of the nanowire device based on nanoparticle electrodes prepared in Example 1 is shown.

[0031] Among them, 1. laser, 2. gold nanoparticle electrode, 3. polymer layer embedded with gold nanoparticle electrode, 4. substrate layer, and 5. low-dimensional material layer. Detailed Implementation

[0032] The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0033] In the following embodiments, the substrate can be made of either a flexible or rigid material, including but not limited to PI (polyimide), PET (polyethylene terephthalate), and SiO2 (glass). The electrodes are metal nanoparticle electrodes, and the metals include, but are not limited to, Au (gold), Ag (silver), and Cu (copper).

[0034] In the following embodiments, the methods used to prepare the metal nanoparticle electrode pairs include, but are not limited to, laser direct writing. In addition, heating methods can also be used to prepare the electrode pairs.

[0035] Example 1

[0036] Step 1: Preparation of polymer precursor solution. Mix Su-8 2000.5 photoresist and polyetheramine D230 at a ratio of 1g SU-82000.5 photoresist: 5mg polyetheramine D230 in an opaque reagent bottle. Stir with a magnetic stirrer at room temperature for 15 minutes to ensure thorough mixing. Degas using a vacuum degassing machine for 15 minutes to obtain the polymer precursor solution.

[0037] Step 2: Preparation of chloroauric acid-acetonitrile solution. The metal salt is dissolved in an organic solution. Taking gold nanoparticles as an example, the molar mass of chloroauric acid (AuCl3·HCl·3H2O) is 393.83 g / mol. 0.788 g of chloroauric acid is weighed and fully dissolved in 10 ml of acetonitrile to prepare a solution with a concentration of 200 × 10⁻⁶ ppm. -3 A mol / L chloroauric acid-acetonitrile solution was prepared and refrigerated.

[0038] Step 3: Cleaning the substrate. In this embodiment, the substrate is made of a rigid material. The substrate is ultrasonically cleaned sequentially with acetone, isopropanol, and alcohol. After rinsing with water, it is dried with a nitrogen gun. The substrate is made of a high-dielectric material, which includes, but is not limited to, rigid glass substrates, SiO2 / Si substrates, and flexible polyimide.

[0039] Step 4: Transfer of Low-Dimensional Materials. The low-dimensional materials are transferred onto the substrate layer obtained in Step 3. One-dimensional nanowires are transferred via optical fiber; the optical fiber is stretched to obtain a very fine diameter, facilitating nanowire transfer. Two-dimensional materials are grown directly on the substrate layer or transferred to the target substrate via mechanical exfoliation or liquid dissociation. Taking one-dimensional CdSe nanowires as an example, the nanowires are transferred to the substrate layer using an optical fiber transfer method.

[0040] Step 5: Spin-coating the polymer precursor. Spin-coat the polymer precursor solution onto the substrate containing the low-dimensional material. Set the spin coating parameters to 500 rpm for 10 seconds and 3000 rpm for 40 seconds. Then heat the substrate at 90°C for 3 minutes to cure. The resulting polymer precursor has a thickness of approximately 1 μm.

[0041] Step Six: Add chloroauric acid-acetonitrile solution. Add chloroauric acid-acetonitrile solution dropwise onto the substrate layer containing the polymer precursor obtained in Step Five, and let it stand for 5 minutes to allow the chloroauric acid-acetonitrile solution to diffuse into the polymer precursor.

[0042] Step 7: Fabrication of gold nanoparticle electrode 2. The sample obtained in Step 6 is placed on the laser operating stage. Using a microscope, the position of the one-dimensional CdSe nanowire is located, and the electrode is fabricated by laser direct writing. The chloroauric acid-acetonitrile solution forms a patterned gold nanoparticle electrode 2 after laser direct writing. The gold nanoparticle electrode 2 is embedded in the polymer precursor. The electrode pattern can be drawn directly within the laser operating system, or the required pattern can be designed in advance and transferred to the operating system for processing. Unwanted chloroauric acid-acetonitrile solution is washed away with acetonitrile, resulting in a CdSe nanowire device based on a metal nanoparticle electrode with good morphology and excellent performance. The laser power is set to 4.5 W, and the laser scanning speed is set to 5 mm / s.

[0043] The low-dimensional material device structure obtained in Example 1 is as follows: Figure 1 As shown, it comprises, from top to bottom, a polymer layer (embedded with metal nanoparticle electrodes), a low-dimensional material layer, and a substrate layer. The gold nanoparticle electrode 2 includes a pair of electrode pairs with indeterminate shapes, each electrode pair being positioned at both ends of the low-dimensional material to form a complete semiconductor device.

[0044] Structural design of low-dimensional material devices, such as Figure 2 As shown, the middle part is a low-dimensional material, and the two ends are electrodes. Taking a one-dimensional nanowire as an example, the device includes a central nanowire and a pair of gold nanoparticle electrodes. In this embodiment, the electrode pair preferably adopts a square structure with a side length of 500 μm and an electrode spacing and width of 30 μm. In other embodiments of the present invention, the shape of the electrode pair is not limited and can be designed and modified according to actual needs, such as double semi-circular electrodes. The material is not limited to nanowires and can be a two-dimensional material thin film such as TDMS family.

[0045] The specific implementation process of the low-dimensional material device based on metal nanoparticle electrodes prepared in Example 1 is as follows: Figure 3 As shown, the low-dimensional material 5 was first transferred onto the substrate layer 4, and then the prepared polymer precursor solution was spin-coated. The spin coating parameters were set to 500 rpm for 10 s and 3000 rpm for 40 s. The solution was then cured by heating at 90°C on a hot plate for 3 min. The thickness of the obtained polymer precursor was about 1 μm.

[0046] A chloroauric acid-acetonitrile solution was then added dropwise, and laser 1 was emitted using a laser direct writing control device. The laser power was set to 4.5 W, and the laser scanning speed was set to 5 mm / s. When laser 1 was focused onto a point on the polymer precursor, the temperature at that point would rise rapidly due to the absorption properties of the metal. When the temperature reached a certain value, gold ions underwent electron transfer under the action of amine, and were reduced to gold nanoparticles in the laser-focused region. These nanoparticles were then fixed in the polymer precursor to form gold nanoparticle electrode 2, ultimately yielding a CdSe nanowire device based on a metal nanoparticle electrode.

[0047] These gold nanoparticles are positioned and assembled into the desired shape and pattern as the laser sweeps across them, and are connected together through physical contact and chemical bonds to form a continuous conductive path.

[0048] By controlling the laser, the target image at the target location can be directly drawn, and the cross-sectional diagram of the low-dimensional material device can be shown as follows. Figure 4 As shown, multiple metal nanoparticles cluster together to form a metal nanoparticle electrode 2, which is then embedded into a polymer precursor under the control of laser energy, ultimately resulting in a polymer layer 3 with embedded metal nanoparticle electrodes. The internal structure of the low-dimensional material device, from top to bottom, consists of a polymer layer 3 with embedded metal nanoparticle electrodes, a low-dimensional material layer 5, and a substrate layer 4.

[0049] The photoelectric response of the nanowire device prepared in Example 1 was tested, and the data obtained are as follows: Figure 5 As shown, the nanowire device exhibits good light response and has a small dark current in the dark. However, after irradiation with a laser with a wavelength of 532 nm and a power of 1 mW, it shows a significant increase in current. The device has good light response, and this method can be applied to the fabrication of photodetectors.

[0050] Example 2

[0051] Step 1: Preparation of polymer precursor solution. Mix Su-8 2000.5 photoresist and polyetheramine D230 at a ratio of 10g SU-82000.5 photoresist: 50mg polyetheramine D230 in an opaque reagent bottle. Stir with a magnetic stirrer at room temperature for 15 minutes to ensure thorough mixing. Degas using a vacuum degassing machine for 15 minutes to obtain the polymer precursor solution.

[0052] Step 2: Preparation of chloroauric acid-acetonitrile solution. The metal salt is dissolved in an organic solution. Taking gold nanoparticles as an example, the molar mass of chloroauric acid (AuCl3·HCl·3H2O) is 393.83 g / mol. 0.394 g of chloroauric acid is weighed and fully dissolved in 10 ml of acetonitrile to prepare a solution with a concentration of 100 × 10⁻⁶ ppm. -3 A mol / L chloroauric acid-acetonitrile solution was prepared and refrigerated.

[0053] Step 3: Clean the substrate. In this embodiment, the substrate is made of flexible polyimide. The substrate is ultrasonically cleaned with acetone, isopropanol and alcohol in sequence. After being cleaned with water, it is dried with a nitrogen gun.

[0054] Step 4: Transferring nanowires. One-dimensional nanowires are transferred via optical fiber. Taking one-dimensional CdSe nanowires as an example, one-dimensional CdSe nanowires are transferred onto the substrate using an optical fiber transfer method.

[0055] Step 5: Spin-coating the polymer precursor. Spin-coat the polymer precursor solution onto the substrate containing the low-dimensional material. Set the spin coating parameters to 500 rpm for 10 seconds and 3000 rpm for 40 seconds. Then heat the substrate at 90°C for 3 minutes to cure. The resulting polymer precursor has a thickness of approximately 1 μm.

[0056] Step Six: Add chloroauric acid-acetonitrile solution. Add chloroauric acid-acetonitrile solution dropwise onto the substrate layer containing the polymer precursor obtained in Step Five, and let it stand for 5 minutes to allow the chloroauric acid-acetonitrile solution to diffuse into the polymer precursor.

[0057] Step 7: Fabrication of gold nanoparticle electrode 2. The sample obtained in Step 6 is placed on the laser operating stage. Using a microscope, the position of the one-dimensional CdSe nanowire is located, and the electrode is fabricated by laser direct writing. The chloroauric acid-acetonitrile solution forms a patterned gold nanoparticle electrode 2 after laser direct writing. The gold nanoparticle electrode 2 is embedded in the polymer precursor. The electrode pattern can be drawn directly within the laser operating system, or the required pattern can be designed in advance and transferred to the operating system for processing. Unwanted chloroauric acid-acetonitrile solution is washed away with acetonitrile, resulting in a flexible CdSe nanowire device based on a metal nanoparticle electrode with good morphology and excellent performance. The laser power is set to 4.5 W, and the laser scanning speed is set to 5 mm / s.

[0058] The difference from Example 1 is that the substrate is changed to a flexible PI substrate.

[0059] Example 2: By replacing the rigid substrate with flexible polyimide, the nanowire device has a certain degree of flexibility. The metal nanoparticles are fixed in the polymer precursor, and the surface polymer can protect the electrodes and materials from damage, providing good protection. Metal nanoparticle electrodes can be fabricated on any flexible substrate. Low-dimensional material devices are more convenient to combine with biological detection and can be flexibly applied to various scenarios.

[0060] Experiments have shown that a concentration of 100 × 10⁻⁶ on a flexible substrate is effective. -3 A mol / L chloroauric acid-acetonitrile solution provides better electrode conductivity.

[0061] Example 3

[0062] Step 1: Preparation of polymer precursor solution. Mix Su-8 2000.5 photoresist and polyetheramine D230 at a ratio of 10g SU-82000.5 photoresist: 50mg polyetheramine D230 in an opaque reagent bottle. Stir with a magnetic stirrer at room temperature for 15 minutes to ensure thorough mixing. Degas using a vacuum degassing machine for 15 minutes to obtain the polymer precursor solution.

[0063] Step 2: Preparation of chloroauric acid-acetonitrile solution. The metal salt is dissolved in an organic solution. Taking gold nanoparticles as an example, the molar mass of chloroauric acid (AuCl3·HCl·3H2O) is 393.83 g / mol. 0.394 g of chloroauric acid is weighed and fully dissolved in 10 ml of acetonitrile to prepare a solution with a concentration of 100 × 10⁻⁶ ppm. -3 A mol / L chloroauric acid-acetonitrile solution was prepared and refrigerated.

[0064] Step 3: Clean the substrate. In this embodiment, the substrate is made of flexible polyimide. The substrate is ultrasonically cleaned with acetone, isopropanol and alcohol in sequence. After being cleaned with water, it is dried with a nitrogen gun.

[0065] Step 4: Transferring the two-dimensional material. The two-dimensional nanomaterial MoS2 is grown directly on the substrate, or transferred to the target substrate by mechanical exfoliation or liquid dissociation. In this example, the two-dimensional nanomaterial MoS2 is obtained by mechanical exfoliation.

[0066] Step 5: Spin-coating the polymer precursor. Spin-coat the polymer precursor solution onto the substrate containing the two-dimensional nanomaterial MoS2. Set the spin coating parameters to 500 rpm for 10 s and 3000 rpm for 40 s. Cur the polymer precursor by heating it at 90°C for 3 min. The resulting polymer precursor has a thickness of about 1 μm.

[0067] Step Six: Add chloroauric acid-acetonitrile solution. Add chloroauric acid-acetonitrile solution dropwise onto the substrate layer containing the polymer precursor obtained in Step Five, and let it stand for 5 minutes to allow the chloroauric acid-acetonitrile solution to diffuse into the polymer precursor.

[0068] Step 7: Fabrication of metal nanoparticle electrodes. The sample obtained in Step 6 is placed on the laser operating stage. Using a microscope, the position of the two-dimensional nanomaterial MoS2 is located, and the electrode is fabricated by laser direct writing. The chloroauric acid-acetonitrile solution is directly written by the laser to form a patterned gold nanoparticle electrode 2. The gold nanoparticle electrode 2 is embedded in the polymer precursor. The electrode pattern can be drawn directly within the laser operating system, or the required pattern can be designed in advance and transferred to the operating system for processing. Unwanted chloroauric acid-acetonitrile solution is washed away with acetonitrile, resulting in a two-dimensional material device based on metal nanoparticle electrodes with good morphology and excellent performance. The laser power is set to 5.0 W, and the laser scanning speed is set to 5 mm / s.

[0069] The difference from Example 2 is that the low-dimensional material used is the two-dimensional nanomaterial MoS2.

Claims

1. A method for fabricating low-dimensional material devices based on metal nanoparticle electrodes, characterized in that, The method includes the following steps: 1) Transferring low-dimensional nanomaterials onto a substrate layer to obtain a substrate layer with low-dimensional nanomaterials; 2) After mixing the photoresist and polyetheramine, a polymer precursor solution is obtained. The metal salt is dissolved in acetonitrile to obtain a metal salt-acetonitrile solution. The metal in the metal salt solution is gold. 3) After spin-coating the polymer precursor solution onto the substrate layer with low-dimensional nanomaterials, a metal salt-acetonitrile solution was added dropwise to obtain sample I; Step 3) specifically involves: spin-coating the polymer precursor solution onto a substrate layer containing low-dimensional nanomaterials, heating and curing to obtain a substrate layer containing polymer precursor and low-dimensional nanomaterials, and then adding a metal salt-acetonitrile solution to the polymer precursor on the substrate layer to obtain sample I. The structure of sample I from top to bottom consists of a polymer layer containing metal salt-acetonitrile solution, a low-dimensional material layer, and a substrate layer. 4) Perform laser direct writing on sample I to obtain sample II with metal nanoparticle electrodes. Place sample II in acetonitrile to obtain a low-dimensional material device with metal nanoparticle electrodes. Step 4) specifically involves: performing laser direct writing on the polymer layer containing the metal salt-acetonitrile solution in sample I according to a preset pattern to obtain sample II; the metal salt-acetonitrile solution is reduced to metal nanoparticles; the metal nanoparticles are fixed in the polymer precursor to form a metal nanoparticle electrode; sample II is placed in acetonitrile to obtain a low-dimensional material device with a metal nanoparticle electrode.

2. The method for manufacturing a low-dimensional material device based on a metal nanoparticle electrode according to claim 1, characterized in that: In step 1), the low-dimensional nanomaterial is a one-dimensional nanomaterial or a two-dimensional nanomaterial. The one-dimensional nanomaterial includes one-dimensional CdSSe nanowires, one-dimensional CdS nanowires, and one-dimensional CdSe nanowires. The two-dimensional material includes few-layer molybdenum disulfide (MoS2), molybdenum selenide (MoSe2), and two-dimensional tellurium (Te). The substrate material is one of polyimide, polyethylene terephthalate, and glass. The diameter of the one-dimensional nanomaterial ranges from 450 nm to 550 nm, and the thickness of the two-dimensional nanomaterial ranges from 5 to 30 nm.

3. The method for manufacturing a low-dimensional material device based on a metal nanoparticle electrode according to claim 2, characterized in that: Step 1) specifically involves transferring one-dimensional nanomaterials onto a substrate layer via optical fiber transfer or transferring two-dimensional nanomaterials onto a substrate layer via liquid dissociation, thereby obtaining a substrate layer containing low-dimensional nanomaterials.

4. The method for manufacturing a low-dimensional material device based on a metal nanoparticle electrode according to claim 1, characterized in that: In step 2), the photoresist is one of SU8 2000.5 photoresist, SU-8 2002 photoresist, and SU8 2005 photoresist; the polyetheramine is one of polyetheramine D230 and polyetheramine D2000; the mass ratio of the photoresist to the polyetheramine is 150~300:1; and the solubility range of the metal salt-acetonitrile solution is 25×10⁻⁶. -3 mol / L ~ 100×10 -3 mol / L.

5. The low-dimensional material device prepared by the method for manufacturing low-dimensional material devices based on metal nanoparticle electrodes as described in any one of claims 1-4, characterized in that: The device has a layered structure, consisting of a polymer layer with embedded metal nanoparticle electrodes, a low-dimensional material layer, and a substrate layer from top to bottom.

6. The low-dimensional material device prepared by the method for manufacturing low-dimensional material devices based on metal nanoparticle electrodes as described in any one of claims 1-4 is used for the fabrication of photodetectors.

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