Probes and probe cards
By using a multi-layer probe structure with alternating low-resistance and high-resistance components, the problems of thermal expansion and reduced mechanical strength of the probe under high current are solved, and stable electrode contact under high current is achieved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- NIHON DENSHIZAIRYO
- Filing Date
- 2023-02-20
- Publication Date
- 2026-07-31
AI Technical Summary
Existing probes are prone to failure at the contact point due to thermal expansion and reduced mechanical strength under high current, and when vertically configured, the conductors are prone to contact due to thermal expansion and bending deformation.
The structure employs alternating low-resistance and high-resistance components to form a multi-layered structure with slits spaced apart to prevent heat conduction, and is manufactured using MEMS technology to maintain mechanical strength.
This improved the mechanical strength and allowable current value of the probe, avoiding contact problems caused by thermal expansion and bending deformation, and ensuring stable contact between the probe and the electrode.
Smart Images
Figure CN117616289B_ABST
Abstract
Description
Technical Field
[0001] This application relates to probes and probe cards. Background Technology
[0002] A probe card is a card (substrate) with probe pins mounted on it. The probe card connects the electrodes (power input electrode, signal output electrode, and ground electrode) of the electronic circuit of the semiconductor device formed on the semiconductor wafer to the testing device through the probes.
[0003] The electrical characteristics of a semiconductor device's electronic circuit are checked by supplying current to the semiconductor device to make it operate and confirming whether the semiconductor device outputs a predetermined signal. In this check, a large current flows through the power supply probe (power pin) and the ground probe (ground pin).
[0004] When inspecting semiconductor devices, if a large current flows through the power supply pins or ground pins, it can sometimes cause probe burn-out. Therefore, probes with a higher allowable current value are desirable.
[0005] To improve the allowable current value while maintaining the mechanical strength of the probe, a method is proposed to arrange high-resistance conductors and low-resistance conductors side by side. The high-resistance conductor maintains the mechanical strength of the probe, while the low-resistance conductor forms the current path through which a large current flows (see Patent Document 1). Existing technical documents Patent documents
[0006] Patent Document 1: Japanese Patent No. 5995953 Summary of the Invention The technical problem that the invention aims to solve
[0007] However, as shown in Patent Document 1, even when multiple conductors with different resistivities are arranged side by side with gaps, there is a problem: the low-resistivity conductor heats up and expands, and heat is transferred to the high-resistivity conductor through contact with it, resulting in a decrease in mechanical strength. Furthermore, in the case of vertically arranged probes, to ensure contact between the probes and the electrodes of the electronic circuit, the probe clips are pressed onto the semiconductor wafer until the probes are bent. Therefore, if conductors with different conductivity are arranged along the bending direction, there is a problem that the conductors can easily come into contact with each other due to thermal expansion and displacement caused by bending.
[0008] This application discloses a technology for solving the above-mentioned problems, the purpose of which is to provide a probe and probe card that can maintain mechanical strength and improve the allowable current value. Technical means for solving technical problems
[0009] The probe disclosed in this application has a contact portion at one end in the long side direction that contacts the electrode of the object being inspected, and a terminal portion at the other end in the long side direction that contacts the circuit board. The probe is constructed using a low-resistance member made of a first conductive metal and a high-resistance member made of a second conductive metal with a higher resistivity than the low-resistance member. Between the contact portion and the terminal portion, in a first direction different from the bending direction of the probe when inspecting the object, there is a multi-layered portion arranged in the order of the high-resistance member, the slit as a gap, and the low-resistance member. When the multi-layered portion is viewed from the bending direction, the low-resistance member and the high-resistance member are arranged in a non-overlapping manner. In addition, the probe card disclosed in this application includes a plurality of the aforementioned probes. Invention Effects
[0010] According to the probe and probe card disclosed in this application, probes and probe cards that can maintain mechanical strength and improve allowable current values can be provided. Attached Figure Description
[0011] Figure 1 This is a diagram that briefly illustrates the inspection status of the electronic circuitry of the probe card according to Embodiment 1. Figure 2 middle, Figure 2 A is Figure 1 Enlarged view of the main parts. Figure 2 B is a 3D view of the probe. Figure 2 C is Figure 2 Sectional views of B, A1-A1 and A2-A2. Figure 2 D is Figure 2 Sectional views of B1-B1 and B2-B2. Figure 2 E is Figure 2 CC section view of B. Figure 3 This is a diagram showing the allowable range in the configuration of the 5 layers involved in Embodiment 1. Figure 4 middle, Figure 4 A is a diagram showing the structure of the low-resistance component of the probe according to Embodiment 2. Figure 4 B is a diagram of the probe involved in Embodiment 2 as viewed from the bending direction Z. Figure 4 C is Figure 4 DD section view of B. Figure 4 D is Figure 4 Sectional views of B along lines E1-E1 and E2-E2. Figure 4 E is Figure 4 FF section view of B. Figure 5 It is a cross-sectional view perpendicular to the long side direction of the five layers of the probe involved in Embodiment 3. Figure 6 middle, Figure 6 A is a diagram of the probe involved in Embodiment 4 as viewed from the bending direction Z. Figure 6 B is Figure 6 DD section view of A. Figure 6 C is Figure 6 Sectional views of A at E1-E1, E2-E2, and GG. Figure 6 D is Figure 6 FF section view of A. Figure 7 middle, Figure 7 A is a diagram showing the structure of the high-resistance component of the probe according to Embodiment 5. Figure 7 B is a diagram of the probe involved in Embodiment 5 as viewed from the bending direction Z. Figure 7 C is Figure 7 DD section view of B. Figure 7 D is Figure 7 Sectional views of B along lines E1-E1 and E2-E2. Figure 7 E is Figure 7 FF section view of B. Figure 8 middle, Figure 8 A is a diagram of the probe involved in Embodiment 6 as viewed from the bending direction Z. Figure 8 B is Figure 8 Sectional views of A along lines E1-E1 and E2-E2. Figure 8 C is Figure 8 FF section view of A. Detailed Implementation
[0012] Implementation method 1. The probe and probe card involved in Embodiment 1 will be described below using figures. Figure 1 This is a diagram that briefly illustrates the inspection status of the electronic circuitry of the probe card 100 according to Embodiment 1. In this instruction manual, Figure 1 The top of the paper is designated as "top," and the bottom of the paper as "bottom." That is, when observing from probe card 100, the side of the object being inspected is designated as "bottom." Additionally, for convenience, [the text continues with further details about labeling and labeling]. Figure 1 The left and right directions of the paper surface are defined as the bending direction Z. For convenience, the direction from the front of the paper surface toward the inside and its opposite direction are defined as the direction Y (first direction) perpendicular to the bending direction Z.
[0013] The probe card 100 is a device for inspecting the electrical characteristics of electronic circuits of semiconductor devices formed on a semiconductor wafer W. The probe card 100 includes a plurality of probes 20 that are in contact with electrodes C on the electronic circuits of the semiconductor devices formed on the semiconductor wafer W. The inspection of the electronic circuit characteristics is performed by bringing the semiconductor wafer W close to the probe card 100, bringing the tips of the probes 20 into contact with the electrodes C on the electronic circuit, and connecting a test device (not shown) to the test connection electrode TC of the wiring substrate 14 of the probe card 100 via the probes 20.
[0014] The probe card 100 includes a hollow frame 10, an upper guide 11 mounted on the upper end of the frame 10, a lower guide 12 mounted on the lower end of the frame 10, a fixing plate 13 for fixing the upper guide 11, and a wiring substrate 14. An intermediate guide may also be provided between the upper guide 11 and the lower guide 12.
[0015] The upper guide 11 has a plurality of guide holes 11H extending vertically, and the lower guide 12, located below the upper guide 11, also has a plurality of guide holes 12H extending vertically. Above the plurality of guide holes 11H on the upper guide 11 is an opening 13H on the fixing plate 13. A wiring substrate 14 is disposed on the upper surface of the fixing plate 13. The wiring substrate 14 includes a plurality of probe connection pads 14P on its lower surface that contact the terminal portion 20t at the upper end of the probe 20.
[0016] Furthermore, multiple probes 20 are inserted and guided through guide holes 12H and 11H, respectively. The probes 20 are vertical probes arranged perpendicular to the object being inspected (electronic circuits formed on the semiconductor wafer W).
[0017] Figure 2 A is Figure 1 An enlarged view of the main parts. It shows a probe 20, an upper guide 11, and a lower guide 12. Figure 2 The left and right directions of A are the bending direction Z of probe 20, that is, the direction of elastic deformation of probe 20 when probe card 100 is overdriven. Figure 2 B is a three-dimensional view of probe 20. The direction Y shown in the figure is perpendicular to the bending direction Z.
[0018] The probe 20 is elongated in shape. It is curved in the center, while the upper and lower portions extend straight in the vertical direction. The curved central portion is an elastically deformable portion 20m. A contact portion 20c is included at the lower end (one end) of the probe 20. A terminal portion 20t is formed at the upper end (the other end).
[0019] The contact portion 20c is the contact portion that abuts against the object being inspected. Additionally, the terminal portion 20t is provided at the upper end of the probe 20 and is pressed against the probe connection pad 14P of the wiring board 14 during inspection. The elastically deformable portion 20m is the portion that is prone to bending deformation when a compressive force is applied along its long side during overdrive. During overdrive, based on the reaction force from the object being inspected, the elastically deformable portion 20m bends in the bending direction Z, and the contact portion 20c retracts towards the terminal portion 20t.
[0020] The predetermined range of the portion above the elastically deformable part 20m is the inner storage portion 20U of the upper guide member. This portion is housed in the guide hole 11H of the upper guide member 11. Furthermore, the predetermined range of the portion below the elastically deformable part 20m is the inner storage portion 20D of the lower guide member. This portion is housed in the guide hole 12H of the lower guide member 12.
[0021] The probe 20 is constructed from two metals with different conductivity and resistivity. One is a metal (first metal) that constitutes a low-resistivity component L, made of metals with low resistivity such as copper, gold, or silver (Cu, Au, Ag). The other is a metal (second metal) that constitutes a high-resistivity component H, made of palladium alloys or similar metals, which has higher resistivity than the low-resistivity component L, lower conductivity, but higher mechanical strength. The low-resistivity component L has high conductivity and functions to increase the allowable current value. The high-resistivity component H is used to maintain mechanical strength.
[0022] Furthermore, since most of the current flows to the part with low resistance, the current flow in the high-resistivity component H is relatively small. Therefore, the heat generated in the high-resistivity component H is less than that in the low-resistivity component L. The resistivity of palladium alloy is about 35.8 μΩ·m, while that of Au is about 3 μΩ·m. If the cross-sectional area is the same, the heat generated by the low-resistivity component L is 12 times that of the high-resistivity component H.
[0023] Figure 2 C is Figure 2 The A1-A1 and A2-A2 sectional views of B are sectional views perpendicular to the long side direction of the single-layer portion T1 of probe 20. Figure 2 D is Figure 2 The B1-B1 and B2-B2 cross-sectional views of B are cross-sectional views perpendicular to the long side direction of the 3-layer portion T3 of probe 20. Figure 2 E is Figure 2 The CC cross-sectional view of B is a cross-sectional view perpendicular to the long side direction of the 5-layer section T5 (multi-layer section) of probe 20.
[0024] The low-resistance member L and the high-resistance member H are arranged differently in different parts of the probe 20 along its long side. The upper end containing the terminal portion 20t and the lower end containing the contact portion 20c are single-layer portions T1 consisting only of a single layer of the high-resistance member H. The number of "layers" refers to the number of layers of material constituting the probe 20 in the direction Y perpendicular to the bending direction Z, including voids (gas). The single-layer portion T1 is... Figure 2 In the cross section C, the high-resistivity component H consists of only a single layer in the direction Y, which is perpendicular to the buckling direction Z.
[0025] During inspection, the terminal portion 20t is repeatedly pressed onto the probe connection pad 14P of the wiring substrate 14, and the contact portion 20c is repeatedly pressed onto the electrode C of the electronic circuit formed on the semiconductor wafer W. Therefore, these parts require mechanical strength and are therefore constructed only with high-resistance components H that have high mechanical strength.
[0026] The probe 20, composed solely of the aforementioned high-resistance members H, includes high-resistance members H on both sides of the lower end in a direction Y perpendicular to the bending direction Z, below the upper end and above the lower end. A three-layer section T3 is formed by sandwiching a low-resistance member L between the two high-resistance members H. The three-layer section T3... Figure 2 In the cross-section of D, in the direction Y perpendicular to the bending direction Z, it consists of three layers: a high-resistance member H, a low-resistance member L, and another high-resistance member H. These three layers are fixed together in the Y direction. A portion of the upper three-layer section T3 becomes the aforementioned upper guide inner storage section 20U, and a portion of the lower three-layer section T3 becomes the lower guide inner storage section 20D.
[0027] The elastic deformation portion 20m between the three layers T3 at the top and bottom consists of two high-resistance members H on both sides of the direction Y perpendicular to the bending direction Z. A five-layer portion T5 is formed by clamping a low-resistance member L between these two high-resistance members H through slits S penetrating both sides of the bending direction Z. The five-layer portion T5... Figure 2 In the cross section of E, in the direction Y perpendicular to the buckling direction Z, it consists of five layers: a high-resistance member H, a slit S serving as a gap, a low-resistance member L, another slit S serving as a gap, and a high-resistance member H.
[0028] like Figure 2 As shown in Figure B, the high-resistance component H of probe 20 splits into two paths from the upper end of probe 20 downwards, and then converges into one again at the lower end. In addition, the low-resistance components L of the upper 3-layer section T3, the low-resistance component L of the 5-layer section T5, and the low-resistance component L of the lower 3-layer section T3 are all connected, and the cross-section perpendicular to its long side is a plate-shaped rectangle.
[0029] During inspection, the low-resistance component L generates 12 times more heat than the high-resistance component H. A portion of the three-layer section T3, namely the upper guide inner receiving portion 20U and the lower guide inner receiving portion 20D, is housed within the guide holes 11H and 12H of the upper guide 11 and lower guide 12, respectively. Since the outer peripheral surface is in contact with the upper guide 11 and lower guide 12, heat conducted from the low-resistance component L to the high-resistance component H in this portion is dissipated through the upper guide 11 and lower guide 12, preventing damage to the high-resistance component H due to heat. The heat dissipation effect achieved by the upper guide 11 and lower guide 12 ranges from 500μm to 1000μm. Therefore, the length of the three-layer section T3 from the upper guide 11 and lower guide 12 to the five-layer section T5 can be set to a range of 500μm to 1000μm.
[0030] On the other hand, in the elastic deformation section 20m, away from the upper guide member 11 and the lower guide member 12, in the same structure as the 3-layer section T3, the heat from the low-resistivity member L is conducted to the high-resistivity member H, which may cause a decrease in the strength of the high-resistivity member H. Therefore, a slit S is provided between the low-resistivity member L and the high-resistivity member H to dissipate the heat generated by the low-resistivity member L while preventing the high heat from the low-resistivity member L from being directly conducted to the high-resistivity member H, thereby reducing the mechanical strength of the high-resistivity member H.
[0031] In the characteristic inspection of electronic circuits, the probe is bent in the bending direction during overdrive. At this time, since the low-resistance component is much hotter than the high-resistance component, it expands more than the high-resistance component. As shown in Patent Document 1 in the prior art, when the high-resistance component and the low-resistance component are arranged side by side through slits on both sides in a direction perpendicular to the bending direction, due to the difference in the expansion rate of the high-resistance component and the deformation caused by bending, the high-temperature low-resistance component comes into contact with the adjacent high-resistance component in the bending direction, and the high heat of the low-resistance component is conducted to the high-resistance component. As a result, the high-resistance component undergoes plastic deformation, and the needle pressure at the contact point relative to the electrode of the electronic circuit decreases.
[0032] However, as shown in Embodiment 1, if a high-resistivity member H and a low-resistivity member L are arranged in a direction Y perpendicular to the bending direction Z via a slit S penetrating the bending direction Z, even if their respective expansion rates are different, the low-resistivity member L adjacent to each other via the slit S and the high-resistivity members H on both sides will not come into contact, thus avoiding the aforementioned problem. That is, when the multilayer portion composed of the low-resistivity member L and the high-resistivity member H is viewed from the bending direction, since the low-resistivity member L and the high-resistivity member H are arranged in a non-overlapping manner, even if there is thermal expansion and deformation caused by bending, the low-resistivity member L and the high-resistivity member H will not come into contact, thus eliminating the problem.
[0033] Figure 3 This is a diagram showing the allowable range of the configuration of the 5-layer section T5. In the figures described so far, a five-layer section T5 is shown, in which the low-resistivity member L, the high-resistivity member H, and the slit S are arranged in a direction Y perpendicular to the bending direction Z. However, this can be changed if the first direction is a different direction from the bending direction Z. Figure 3 As shown, when viewing the 5th layer T5 of probe 20 from the bending direction Z, the low-resistivity member L and the high-resistivity member H do not overlap. In this case, even if there is thermal expansion and deformation caused by bending, the low-resistivity member L will not come into contact with the high-resistivity member H.
[0034] The probe 20 is fabricated using so-called MEMS (Micro Electro Mechanical Systems) technology. MEMS technology is a technique for fabricating micro-scale three-dimensional structures using photolithography and sacrificial layer etching. Photolithography is a processing technique that uses photoresist to create micro-patterns in semiconductor manufacturing processes. Sacrificial layer etching involves forming a lower layer called a sacrificial layer, forming the layers constituting the structure on top of it, and then removing only the sacrificial layer by etching, thereby creating a three-dimensional structure.
[0035] In the formation of the layers including the sacrificial layer, known electroplating techniques can be used. For example, by immersing a substrate, which serves as the cathode, and a metal sheet, which serves as the anode, in an electrolyte and applying a voltage between the two electrodes, metal ions in the electrolyte can be deposited on the substrate surface. This process is called electroplating, and it is a wet process in which the substrate is immersed in an electrolyte; therefore, a drying process is performed after electroplating.
[0036] According to the probe 20 and probe card 100 of Embodiment 1, when inspecting electronic circuits formed on a semiconductor wafer W, the low-resistance member L adjacent to each other and the high-resistance members H on both sides are not arranged in the bending direction Z via the slit S of the probe 20. Even if there is thermal expansion and deformation caused by bending, they will not come into contact with each other. Therefore, the high heat of the low-resistance member L is not conducted to the high-resistance member H, and a probe and probe card with high heat dissipation and high allowable current value can be provided.
[0037] Implementation method 2. The following description focuses on the parts that differ from those in Embodiment 1, and describes the probe and probe card involved in Embodiment 2. Figure 4 A is a diagram showing the structure of the low-resistance component L of probe 220. Figure 4 B is from Figure 4 Figure A shows the bending direction Z of the probe 220.
[0038] Figure 4 C is Figure 4 The DD cross-sectional view of B is a cross-sectional view perpendicular to the long side direction of the single-layer portion T1 of probe 220. The cross-sectional shape of this portion is the same as that in Embodiment 1. Figure 4 D is Figure 4 The cross-sectional views E1-E1 and E2-E2 of B are perpendicular to the long side direction of the upper guide inner receiving portion 220U and the lower guide inner receiving portion 220D of probe 220. The cross-sectional shape of this part is different from that of Embodiment 1. The cross-sectional shape of the part corresponding to the 3-layer portion T3 in Embodiment 1 is... Figure 4 D. Figure 4 E is Figure 4 The FF cross-sectional view of B is a cross-sectional view perpendicular to the long side direction of the 5th layer portion T5 of probe 220. The cross-sectional shape of this part is the same as that in Embodiment 1.
[0039] like Figure 4 As shown in Figure A, at a position higher and lower than layer T5, the width of the low-resistivity member L in the bending direction Z narrows. Furthermore, in this section, the low-resistivity member L is embedded within the high-resistivity member H. That is, the entire outer periphery of the low-resistivity member L is covered by the high-resistivity member H.
[0040] According to Embodiment 2, the probe 220 and probe card 100 achieve the same effect as Embodiment 1 when inspecting electronic circuits formed on the semiconductor wafer W. Furthermore, the outer peripheral surfaces of the probe 220, specifically the upper guide inner receiving portion 220U that contacts the upper guide 11 and the lower guide inner receiving portion 220D that contacts the lower guide 12, are completely covered by a high-resistance member H that is harder than the low-resistance member L. Therefore, a probe 220 and probe card 100 with higher durability can be provided.
[0041] Implementation method 3. The following description focuses on the probes and probe cards involved in Embodiment 3, which differ from Embodiments 1 and 2. Figure 5 It is a cross-sectional view perpendicular to the long side direction of the 5th layer T5 of probe 320. As described above, the low-resistance member L and the high-resistance member H have different expansion rates during inspection. The low-resistance member L, which becomes hotter, expands more than the high-resistance member H, and the bending amount also increases. Therefore, in this embodiment 3, a thin plate-shaped high-resistance member H is also provided on the end face of the low-resistance member L in the bending direction Z of the 5-layer portion T5 to reduce the difference in expansion rates. As a result, the influence of the difference in expansion rates between the low-resistance member L and the high-resistance member H on the needle pressure of the probe 320 can be suppressed.
[0042] According to Embodiment 3, the probe 320 and probe card 100 achieve the same effect as Embodiment 1 when inspecting electronic circuits formed on the semiconductor wafer W. Furthermore, since the expansion rate of the low-resistance member L of the 5-layer portion T5 can be adjusted to stabilize the probe pressure of the probe 320, a probe 320 and probe card 100 with higher reliability can be provided.
[0043] Implementation method 4. Hereinafter, the probe and probe card involved in Embodiment 4 will be described, focusing on the parts that are different from Embodiments 1 to 3. Figure 6 A is a diagram of probe 420 observed from the bending direction Z. Figure 6 B is Figure 6 A DD cross-sectional view of probe 420 of A shows a section perpendicular to the long side direction of the single-layer portion T1 of probe 420. The cross-sectional shape of this portion is the same as that of embodiments 1 to 3. Figure 6 C is Figure 6 The cross-sectional views E1-E1, E2-E2, and GG of A show sections perpendicular to the long side direction of the upper guide inner storage portion 220U, the lower guide inner storage portion 220D, and the bridging portion Br of probe 420. Each guide inner storage portion is the same as in Embodiment 2, but in this Embodiment 4, the bridging portion Br is positioned midway along the long side direction of the 5-layer portion T5. The cross-sectional shape of this bridging portion Br is the same as the cross-sectional shape of the upper guide inner storage portion 220U and the lower guide inner storage portion 220D. Figure 6 D is Figure 6 The FF cross-sectional view of A shows a section perpendicular to the long side direction of the 5th layer portion T5 of probe 220. The cross-sectional shape of this portion is the same as that in Embodiment 1.
[0044] As described above, in the 5-layer section T5, the low-resistivity member L reaches a higher temperature than the high-resistivity member H. This is not only due to deformation caused by buckling, but also because of the difference in their expansion rates. Therefore, the low-resistivity member L buckles more and bends more. Thus, in this embodiment 4, a bridging section Br is disposed midway along the long side of the 5-layer section T5 in embodiment 2. The bridging section Br can be one location or multiple locations. By setting a bridging part Br and physically fixing the low-resistance member L and the high-resistance member H in the middle part of the entire length of the long side of the 5th layer, even if the low-resistance member L is bent significantly, it is possible to prevent it from coming into contact with the high-resistance member H in an unexpected part, thus preventing damage to the mechanical strength of the high-resistance member H.
[0045] According to Embodiment 4, the probe 420 and probe card 100 achieve the same effect as Embodiment 1 when inspecting electronic circuits formed on the semiconductor wafer W. Furthermore, by dispersing the expansion amount of the low-resistance member L of the 5th layer T5 through the bridging portion Br, the warping shape of the low-resistance member L and the high-resistance member H can be managed, thus providing a probe 320 and probe card 100 with higher reliability.
[0046] Implementation method 5. The following description focuses on the parts that differ from those in Embodiment 2, and describes the probe and probe card involved in Embodiment 5. Figure 7 A is a diagram showing the structure of the high-resistance component of probe 520. Figure 7 B is a diagram of probe 520 observed from the bending direction Z. Figure 7 C is Figure 7 DD section view of B. Figure 7 D is Figure 7 Sectional views of B along lines E1-E1 and E2-E2. Figure 7 E is Figure 7 FF section view of B. The probe 220 described in Embodiment 2 differs from the probe 520 of this embodiment in that the high-resistance member H and the low-resistance member L of the 5-layer portion T505 are reversed compared to Embodiment 2. That is, the high-resistance member H of the probe 220 described in Embodiment 2 is the low-resistance member L in this embodiment 5, and the low-resistance member L of the probe 220 described in Embodiment 2 is the high-resistance member H in this embodiment 5. All other structures are the same.
[0047] According to the probe 520 and probe card 100 of Embodiment 5, when inspecting electronic circuits formed on a semiconductor wafer W, the adjacent low-resistance member L and the high-resistance members H on both sides are not arranged in the bending direction Z via the slit S of the probe 20. Therefore, even if their expansion rates are different, they will not come into contact with each other. Thus, the high heat of the low-resistance member L is not conducted to the high-resistance member H, providing a probe and probe card with high heat dissipation and high allowable current value.
[0048] Implementation method 6. The following description focuses on the parts that differ from those in Embodiment 1, and describes the probe and probe card involved in Embodiment 6. Figure 8 A is a diagram of probe 620 observed from the bending direction Z. Figure 8 B is Figure 8 Sectional views of B along lines E1-E1 and E2-E2. Figure 8 C is Figure 8 FF section view of A.
[0049] In Embodiment 1, the elastically deformable portion 620m stitches the slits together to form a 5-layer portion T5. However, in Embodiment 6, a second 3-layer portion T603 (multi-layer portion) is formed sequentially in the direction Y perpendicular to the bending direction Z, consisting of a high-resistance member H, a slit S, and a low-resistance member L. Furthermore, the portion above and below the second 3-layer portion T603 forms the high-resistance member H. At a position above and below the second third layer T603, there may also be two layers, namely a high-resistance member H and a low-resistance member L, arranged sequentially in the direction Y perpendicular to the bending direction Z.
[0050] According to the probe 620 and probe card 100 of Embodiment 6, when inspecting electronic circuits formed on a semiconductor wafer W, the low-resistance member L and the high-resistance member H adjacent to each other via the slit S of the probe 620 are not arranged in the bending direction Z, so they will not come into contact with each other even if their expansion rates are different. Therefore, the high heat of the low-resistance member L is not conducted to the high-resistance member H, and a probe and probe card with high heat dissipation and high allowable current value can be provided.
[0051] Although this application describes various exemplary embodiments and examples, the various features, methods and functions described in one or more embodiments are not limited to the application of a particular embodiment and can be applied to the embodiment individually or in various combinations. Therefore, numerous variations not illustrated are conceivable within the scope of the technology disclosed in this application. For example, this could include variations, additions, or omissions of at least one constituent element, or the extraction of at least one constituent element and its combination with constituent elements of other embodiments. Label Explanation
[0052] 100 probe card, 10 frame, 11 upper guide, 12 lower guide, 11H and 12H guide holes, 13 fixing plate, 13H opening, 14 wiring substrate, 14P probe connection pad, 20, 220, 320, 420, 520, and 620 probes, 20c contact, 20m and 620m elastic deformation, 20t terminal, 20U and 220U upper guide inner storage, 20D and 220D lower guide inner storage, T1 single layer, T3 three-layer, T603 second three-layer, T5 and T505 five-layer, Br bridging, C electrode, H high resistance component, L low resistance component, S slit, TC test connection electrode, W semiconductor wafer, and Z bending direction.
Claims
1. A probe having a contact portion at one end along its long side that contacts an electrode of an object to be inspected, and a terminal portion at the other end along its long side that contacts a circuit board, characterized in that... The probe is constructed using a low-resistance component made of a first conductive metal and a high-resistance component made of a second conductive metal with a higher resistivity than the low-resistance component. Between the contact portion and the terminal portion, in a first direction different from the bending direction of the probe when inspecting the object being inspected, there is a multi-layered portion arranged in the order of the high-resistance member, the slit serving as a gap, and the low-resistance member. When viewed from the bending direction, the multilayer section is arranged in a non-overlapping manner, with the low-resistance member and the high-resistance member being arranged.
2. The probe as described in claim 1, characterized in that, The multi-layered section is a five-layered section consisting of five layers arranged in the order of the high-resistance member, the slit, the low-resistance member, the slit, and the high-resistance member.
3. The probe as described in claim 2, characterized in that, On both sides of the long side direction of the 5-layer portion, there is a 3-layer portion formed by sandwiching the low-resistance member between the two high-resistance members in the first direction. The low-resistance member of the 5-layer portion and the low-resistance member of the 3-layer portion are continuously connected in the long side direction. The high-resistance member of the 5-layer portion and the high-resistance member of the 3-layer portion are continuously connected in the long side direction. The contact portion and the terminal portion are composed only of the high-resistance member.
4. The probe as described in claim 3, characterized in that, The guide housing portion is located between the terminal portion and the 5-layer portion, and between the 5-layer portion and the contact portion, including the outer peripheral surface of the low-resistance member, which is completely covered by the high-resistance member.
5. The probe as described in claim 1, characterized in that, The low-resistance member of the multilayer portion has the high-resistance member on at least one end face in the bending direction.
6. The probe as described in claim 2, characterized in that, Between the upper and lower ends of the long side of the 5th layer, the area around the outer periphery of the low-resistance member is completely covered by the high-resistance member, and a bridging portion of the low-resistance member and the high-resistance member is fixed thereon.
7. The probe according to any one of claims 1 to 6, characterized in that, The first direction is the direction perpendicular to the bending direction.
8. The probe as claimed in claim 1, characterized in that, The multi-layered section is a three-layered section consisting of the high-resistance member, the slit, and the low-resistance member in that order.
9. The probe as claimed in claim 1, characterized in that, The multi-layered section is a five-layered section consisting of five layers arranged in the order of the low-resistance member, the slit, the high-resistance member, the slit, and the low-resistance member.
10. A probe card, characterized in that, It includes multiple probes as described in claim 1.
11. A probe card, characterized by, include: Multiple probes as described in claim 4; as well as A guide having a plurality of guide holes for inserting and guiding each of the probes, wherein a receiving portion of the guide is inserted into the guide holes.
12. The probe card as described in claim 11, characterized in that, The length of the third layer from the inner storage portion of the guide to the fifth layer is 500μm to 1000μm.