Wafer automatic scanning dicing method

Abstract

The application relates to the technical field of semiconductor substrate material manufacturing, and particularly discloses a wafer automatic scanning cutting method, which comprises the following steps: marking the cutting size of the cutting surface of an indium phosphide wafer to obtain a cutting track; acquiring the position and the cutting track of the indium phosphide wafer by laser scanning; rotating the indium phosphide wafer by using a vacuum adsorption assembly, bonding a diamond cutting head with the cutting track, and cutting according to the cutting track to form joint concaves on the cutting surface; configuring a material taking assembly to grab the part in the cutting track of the indium phosphide wafer, and breaking the part outside the cutting track along the joint concaves by using the vacuum adsorption assembly to obtain an indium phosphide wafer with a preset cutting size. The application can improve the cutting efficiency of the wafer and reduce the labor intensity of workers. The application can realize the automatic cutting of the wafer by reforming the manual breaking, greatly improves the cutting efficiency of the wafer, and reduces the labor intensity of workers.

Description

Technical Field

[0001] This invention relates to the field of semiconductor substrate material manufacturing technology, and in particular to an automatic scanning and dicing method for wafers. Background Technology

[0002] Indium phosphide (IP) substrates (wafers) have applications in the manufacture of high-frequency, high-power devices, fiber optic communications, wireless transmission, radio astronomy, and other radio frequency (RF) devices. RF devices manufactured using IPP substrates have demonstrated excellent performance in applications such as satellites and radar. They are highly competitive in the RF front-end of radar and communication systems and in analog / mixed-signal wide-bandwidth circuits, making them suitable for applications such as high-speed data processing and high-precision wide-bandwidth A / D conversion. Furthermore, IPP-based RF devices, such as low-noise amplifiers, modules, and receivers, are widely used in satellite communications, millimeter-wave radar, and active and passive millimeter-wave imaging equipment. At bandwidth levels above 100 GHz, IPP-based RF devices have significant advantages in backhaul networks and point-to-point communication networks for wireless transmission. In the future, IPP substrates are expected to become the mainstream substrate material for RF devices in 6G and even 7G wireless transmission networks. However, the dicing process is time-consuming and labor-intensive.

[0003] In existing technologies, indium phosphide substrates are manually cut into circles. Employees first use a diamond cutter to bend the irregular wafers into squares, then use the diamond cutter to straighten the edges of each wafer along the joint surface (forming an octagon) and place it in a chuck for cutting into circles before proceeding to the next wafer. This manual operation is difficult, labor-intensive, and inefficient, failing to meet the demands for high efficiency. Summary of the Invention

[0004] The technical problem to be solved by this invention is: how to improve the efficiency of wafer cutting and reduce the labor intensity of workers.

[0005] To address the aforementioned technical problems, this invention provides an automated wafer scanning and dicing method, comprising the following steps:

[0006] An indium phosphide wafer is provided, and the cutting surface of the indium phosphide wafer is marked with cutting dimensions to obtain a cutting trajectory;

[0007] The marked indium phosphide wafer is fixed on a vacuum adsorption assembly, and the position and cutting trajectory of the indium phosphide wafer are obtained by laser scanning.

[0008] The vacuum adsorption component drives the indium phosphide wafer to rotate, bringing the diamond cutting head into contact with the cutting trajectory and cutting according to the cutting trajectory to form joint grooves on the cutting surface;

[0009] The material handling component picks up a portion of the indium phosphide wafer within the cutting trajectory, and the vacuum adsorption component breaks off the portion outside the cutting trajectory along the joint groove to obtain an indium phosphide wafer of a preset cutting size.

[0010] More preferably, the vacuum adsorption assembly includes a first suction cup for adsorbing and fixing indium phosphide wafers and a suction cup rotation motor for driving the first suction cup to rotate.

[0011] More preferably, the vacuum adsorption assembly further includes an outer ring and a first cylinder. The outer ring is disposed on the outer periphery of the first suction cup, and the first cylinder is disposed at the bottom of the outer ring and can drive the outer ring to move up and down.

[0012] More preferably, the rotational speed of the first suction cup is divided into a first-stage rotational speed, a second-stage rotational speed, a third-stage rotational speed, and a fourth-stage rotational speed. The diamond cutting head contacts the cutting trajectory on the indium phosphide wafer when the rotational speed of the first suction cup is adjusted from the first-stage rotational speed to the second-stage rotational speed.

[0013] More preferably, the rotational speed in the first stage is 20-60 r / min, the rotational speed in the second stage is 50-80 r / min, the rotational speed in the third stage is 300-600 r / min, and the rotational speed in the fourth stage is 1000-2500 r / min.

[0014] More preferably, the rotational speed in the first stage is 40 r / min, the rotational speed in the second stage is 60 r / min, the rotational speed in the third stage is 500 r / min, and the rotational speed in the fourth stage is 1500 r / min.

[0015] More preferably, the duration of the first stage rotational speed is 5s, the duration of the second stage rotational speed is 10s, the duration of the third stage rotational speed is 20s, and the duration of the fourth stage rotational speed is 60s.

[0016] More preferably, the material handling mechanism includes a bending support arm and a support arm rotation motor for driving the bending support arm to rotate. The bending support arm is provided with a second suction cup, which is used to adsorb a portion of the indium phosphide wafer within the cutting trajectory. The lower surface of the second suction cup is provided with a detection sensor for identifying the cutting trajectory.

[0017] More preferably, the cutting size is marked as the preset center and diameter of the indium phosphide wafer.

[0018] More preferably, the thickness of the indium phosphide wafer is 450–660 μm.

[0019] Compared with the prior art, the automatic wafer scanning and dicing method of this invention has the following advantages:

[0020] This invention involves marking the cutting dimensions on the dicing surface of an indium phosphide wafer to obtain a cutting trajectory. Laser scanning is then used to acquire the position of the indium phosphide wafer and the cutting trajectory. A diamond cutting head is then attached to the cutting trajectory and cut according to it, forming joint grooves on the cut surface. Finally, a vacuum adsorption component is used to break off the portion outside the cutting trajectory along the joint grooves, obtaining an indium phosphide wafer of a preset cutting size. This invention, by modifying manual rounding, enables automated wafer cutting, significantly improving wafer rounding efficiency and reducing the labor intensity of workers. Attached Figure Description

[0021] Figure 1 This is a flowchart of an automatic wafer scanning and cutting method according to the present invention.

[0022] Figure 2 This is a cross-sectional view of the vacuum adsorption component described in this invention.

[0023] Figure 3 This is a structural diagram of the material handling component described in this invention.

[0024] In the picture:

[0025] 100. Vacuum adsorption assembly; 101. First suction cup; 102. Suction cup rotation motor; 103. Vacuum tube; 104. Rotary joint; 105. Outer ring; 106. First cylinder;

[0026] 200. Material handling assembly; 201. Bending support arm; 202. Support arm rotation motor; 203. Second suction cup; 204. Second cylinder. Detailed Implementation

[0027] The specific embodiments of the present invention will be described in further detail below with reference to the accompanying drawings and examples. The following examples are for illustrative purposes only and are not intended to limit the scope of the invention.

[0028] In the description of this invention, it should be understood that the terms "upper," "lower," "inner," "outer," "ascending," and "descending" used in this invention to indicate the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this invention and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this invention.

[0029] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance. Furthermore, unless otherwise explicitly specified and limited, the terms "installed," "connected," and "linked" should be interpreted broadly, for example, referring to a fixed connection, a detachable connection, or an integral connection; a mechanical connection or an electrical connection; a direct connection or an indirect connection via an intermediate medium; or a connection within two components. Those skilled in the art will understand the specific meaning of these terms in this invention based on the specific circumstances.

[0030] like Figure 1 As shown, this embodiment provides an automatic wafer scanning and cutting method, including the following steps:

[0031] S1: Provide an indium phosphide wafer, and mark the cutting dimensions on the cutting surface of the indium phosphide wafer to obtain the cutting trajectory;

[0032] S2: Fix the marked indium phosphide wafer onto the vacuum adsorption assembly, and use laser scanning to obtain the position and cutting trajectory of the indium phosphide wafer;

[0033] S3: The vacuum adsorption component is used to drive the indium phosphide wafer to rotate, so that the diamond cutting head is attached to the cutting trajectory and cuts according to the cutting trajectory to form joint grooves on the cutting surface.

[0034] S4: The material handling component is configured to grab the portion of the indium phosphide wafer within the cutting trajectory, and the portion outside the cutting trajectory is broken off along the joint groove using the vacuum adsorption component to obtain an indium phosphide wafer of a preset cutting size.

[0035] In step S1 above, the thickness of the indium phosphide wafer provided is 450-660 μm, and in this embodiment it is preferably 500 μm.

[0036] In step S1 above, the cutting size is marked as the preset center and diameter of the indium phosphide wafer.

[0037] In some implementations, such as Figure 2As shown, the vacuum adsorption assembly 100 includes a first suction cup 101 for adsorbing and fixing indium phosphide wafers and a suction cup rotation motor 102 for driving the first suction cup 101 to rotate. To ensure that the first suction cup 101 can be connected to an external vacuum source while rotating, a vacuum tube 103 is also provided on the first suction cup 101. The vacuum tube 103 is connected to the external vacuum source through a rotary joint 104. In this way, the first suction cup 101 can be rotated while ensuring the adsorption force of the first suction cup 101. Thus, the first suction cup 101 adsorbs and fixes the indium phosphide wafers. When the diamond cutting head descends and comes into contact with the cutting trajectory of the indium phosphide wafer, the suction cup rotation motor 102 drives the first suction cup 101 to rotate, thereby achieving circular cutting.

[0038] In the above embodiment, after the diamond cutting head forms joint grooves on the cutting surface of the indium phosphide wafer, the wafer portion does not fall off directly. In order to facilitate the material handling assembly 200 to pick up the indium phosphide wafer, when the material handling assembly 200 picks up the portion within the cutting trajectory, the vacuum adsorption assembly can break off the portion outside the cutting trajectory along the joint grooves to obtain an indium phosphide wafer of a preset cutting size, which is then sent to the next process by the material handling assembly 200. Therefore, the vacuum adsorption assembly 100 also includes an outer ring 105 and a first cylinder 106. The outer ring 105 is located outside the first suction cup 101. In this process, the first cylinder 106 is located at the bottom of the outer ring 105 and can drive the outer ring 105 to rise and fall. After the diamond cutting head cuts the indium phosphide wafer into a circle, the first cylinder 106 moves to drive the outer ring 105 to rise, thereby applying an upward force to the corner of the wafer, causing the corner to break at the joint indentation. The middle part of the indium phosphide wafer is still firmly adsorbed by the first suction cup 101. After the corner of the wafer is broken off, the first cylinder 106 drives the outer ring 105 to fall and reset. At this time, the picking mechanism 200 can grab the middle part of the wafer and transfer it to the next process.

[0039] In some embodiments, the rotational speed of the first suction cup 101 is divided into a first-stage rotational speed, a second-stage rotational speed, a third-stage rotational speed, and a fourth-stage rotational speed. The diamond cutting head contacts the cutting trajectory on the indium phosphide wafer when the rotational speed of the first suction cup is adjusted from the first-stage rotational speed to the second-stage rotational speed. In order to ensure the cutting accuracy and efficiency, the first-stage rotational speed, the second-stage rotational speed, the third-stage rotational speed, and the fourth-stage rotational speed gradually increase.

[0040] In the above embodiments, the rotational speed of the first stage is 20-60 r / min, the rotational speed of the second stage is 50-80 r / min, the rotational speed of the third stage is 300-600 r / min, and the rotational speed of the fourth stage is 1000-2500 r / min. In this embodiment, the rotational speed of the first stage is preferably 40 r / min, the rotational speed of the second stage is 60 r / min, the rotational speed of the third stage is 500 r / min, and the rotational speed of the fourth stage is 1500 r / min. The lower rotational speeds of the first and second stages ensure that the diamond cutting head is aligned with the cutting trajectory, thus guaranteeing the cutting accuracy of the wafer. The higher rotational speeds of the third and fourth stages improve the cutting efficiency.

[0041] In the above embodiment, the duration of the first stage rotational speed is 5s, the duration of the second stage rotational speed is 10s, the duration of the third stage rotational speed is 20s, and the duration of the fourth stage rotational speed is 60s.

[0042] In some implementations, such as Figure 3 As shown, the material handling mechanism 200 includes a bending support arm 201 and a support arm rotation motor 202 for driving the bending support arm 201 to rotate. A second suction cup 203 is provided on the bending support arm 201. The second suction cup 203 is used to adsorb a portion of the indium phosphide wafer within the cutting trajectory. A detection sensor for identifying the cutting trajectory is disposed on the lower surface of the second suction cup 203. A second cylinder 204 is also provided on the bending support arm 201. The second suction cup 203 is located at the piston end of the second cylinder 204. 04 is used to control the lifting and lowering of the second suction cup 203; thus, when the corner of the wafer is broken off by the outer ring 105 and the outer ring 105 is lowered and reset, the support arm rotation motor 202 can control the rotation angle of the bending support arm 201 according to the detection data fed back by the detection sensor, so that the second suction cup 203 can be positioned directly above the indium phosphide wafer, and the second cylinder 204 drives the second suction cup 203 to descend and adsorb the indium phosphide wafer to transfer it to the next process, ensuring the balance and integrity of the wafer during the transfer process.

[0043] In summary, this embodiment provides an automatic wafer scanning and cutting method. It involves marking the cutting dimensions on the cutting surface of an indium phosphide wafer to obtain a cutting trajectory, then using laser scanning to acquire the position and cutting trajectory of the indium phosphide wafer. A diamond cutting head is then attached to the cutting trajectory and cut according to the trajectory to form joint grooves on the cutting surface. Finally, a vacuum adsorption component is used to break off the portion outside the cutting trajectory along the joint grooves, obtaining an indium phosphide wafer of a preset cutting size. By modifying manual rounding, automatic wafer cutting can be achieved, significantly improving wafer rounding efficiency and reducing the labor intensity of workers.

[0044] The above description is merely a preferred embodiment of the present invention. It should be noted that those skilled in the art can make various improvements and substitutions without departing from the technical principles of the present invention, and these improvements and substitutions should also be considered within the scope of protection of the present invention. The basic principles, main features, and advantages of the present invention have been shown and described above. It is obvious to those skilled in the art that the present invention is not limited to the details of the above preferred embodiments. The embodiments should be considered exemplary and non-limiting. The scope of the present invention is defined by the appended claims rather than the foregoing description. Therefore, it is intended that all changes falling within the meaning and scope of the equivalents of the claims be included within the present invention.

[0045] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in the embodiments can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. A method for automatic scanning and cutting of wafers, characterized in that, Includes the following steps: An indium phosphide wafer is provided, and the cutting surface of the indium phosphide wafer is marked with cutting dimensions to obtain a cutting trajectory; The marked indium phosphide wafer is fixed on a vacuum adsorption assembly, and the position and cutting trajectory of the indium phosphide wafer are obtained by laser scanning. The vacuum adsorption component drives the indium phosphide wafer to rotate, bringing the diamond cutting head into contact with the cutting trajectory and cutting according to the cutting trajectory to form joint grooves on the cutting surface; The material handling component is configured to grab a portion of the indium phosphide wafer within the cutting trajectory, and the vacuum adsorption component is used to break off the portion outside the cutting trajectory along the joint groove to obtain an indium phosphide wafer of a preset cutting size. The vacuum adsorption assembly includes a first suction cup for adsorbing and fixing indium phosphide wafers and a suction cup rotation motor for driving the first suction cup to rotate. The rotational speed of the first suction cup is divided into a first stage rotational speed, a second stage rotational speed, a third stage rotational speed, and a fourth stage rotational speed. When the rotational speed of the first suction cup is adjusted from the first stage rotational speed to the second stage rotational speed, the diamond cutting head contacts the cutting trajectory on the indium phosphide wafer. The rotational speed in the first stage is 20-60 r / min, the rotational speed in the second stage is 50-80 r / min, the rotational speed in the third stage is 300-600 r / min, and the rotational speed in the fourth stage is 1000-2500 r / min.

2. The automatic wafer scanning and cutting method according to claim 1, characterized in that, The vacuum adsorption assembly also includes an outer ring and a first cylinder. The outer ring is located on the outer periphery of the first suction cup, and the first cylinder is located at the bottom of the outer ring and can drive the outer ring to move up and down.

3. The automatic wafer scanning and cutting method according to claim 1, characterized in that, The rotational speed is 40 r / min in the first stage, 60 r / min in the second stage, 500 r / min in the third stage, and 1500 r / min in the fourth stage.

4. The automatic wafer scanning and cutting method according to claim 1, characterized in that, The duration of the first stage rotational speed is 5 seconds, the duration of the second stage rotational speed is 10 seconds, the duration of the third stage rotational speed is 20 seconds, and the duration of the fourth stage rotational speed is 60 seconds.

5. The automatic wafer scanning and cutting method according to claim 1, characterized in that, The material handling assembly includes a bending support arm and a support arm rotation motor for driving the bending support arm to rotate. The bending support arm is provided with a second suction cup, which is used to adsorb a portion of the indium phosphide wafer within the cutting trajectory. The lower surface of the second suction cup is provided with a detection sensor for identifying the cutting trajectory.

6. The automatic scanning and cutting method for wafers according to claim 1, characterized in that, The cutting dimensions are marked as the preset center and diameter of the indium phosphide wafer.

7. The automatic wafer scanning and cutting method according to claim 1, characterized in that, The thickness of the indium phosphide wafer is 450–660 μm.

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