Friction control devices and systems based on structural superlubricity of semiconductor heterojunctions

Abstract

The application discloses a kind of friction control devices and systems based on structural superlubricity semiconductor heterojunction, the friction control device includes: the first control layer and the second control layer of laminated arrangement;First control layer and the second control layer contact, and first control layer and the second control layer can be relatively slid, the contact surface of first control layer and the second control layer is superlubricity contact surface;Semiconductor heterojunction is formed between first control layer and the second control layer;When different bias voltage is applied to first control layer and the second control layer, the friction force generated by the relative motion of first control layer and the second control layer is different.The technical scheme of the application, by changing the size of bias voltage applied between first control layer and the second control layer, the friction force thereof can be continuously changed from a very low state to a very high state, so that it can be applied to various application scenarios, and the friction force change of the friction control device provided by the application is reversible, and the service life is not limited.

Description

Technical Field

[0001] This invention relates to the technical field of friction control, and in particular to a friction control device and system based on a structurally superlubricating semiconductor heterojunction. Background Technology

[0002] Microelectromechanical systems, also known as MEMS systems, have internal structures that are typically on the micrometer or even nanometer scale. They are independent intelligent systems with advantages such as small size, light weight, low power consumption, and stable performance. They have a wide range of applications in fields such as aviation, aerospace, automotive, biomedicine, environmental monitoring, and military.

[0003] Microelectromechanical systems (MEMS) are miniature devices or systems that integrate microsensors, microactuators, micromechanical structures, micropower sources, signal processing and control circuits, high-performance integrated electronic devices, interfaces, and communication. Many devices within MEMS have moving parts, and the movement of any part must go through three processes: initiation, movement, and braking. The first two processes require the lowest possible friction, while braking requires high friction to achieve faster stopping, making friction control particularly important.

[0004] However, existing microelectromechanical devices (MEMS) inevitably suffer from wear. While friction control methods using liquid lubricants can reduce wear to some extent, they will fail under high external loads, high temperatures, or in environments with chemical contamination or vacuum, thus failing to meet the requirements for low wear. Furthermore, they can only reduce friction and cannot increase friction to accelerate braking. Summary of the Invention

[0005] This invention provides a friction control device and system based on a structurally superlubricating semiconductor heterojunction to meet the friction force requirements in different scenarios.

[0006] In a first aspect, the present invention provides a friction control device based on a structurally superlubricated semiconductor heterojunction, comprising: a first control layer and a second control layer stacked together;

[0007] The first control layer is in contact with the second control layer, and the first control layer and the second control layer can slide relative to each other. The contact surface between the first control layer and the second control layer is a super-slippery contact surface.

[0008] A semiconductor heterojunction is formed between the first control layer and the second control layer; when different bias voltages are applied to the first control layer and the second control layer, the frictional forces generated by the relative motion of the first control layer and the second control layer are different.

[0009] Optionally, one of the first control layer and the second control layer is a conductor, and the other is a semiconductor, and a Schottky junction is formed between the first control layer and the second control layer; or,

[0010] Both the first control layer and the second control layer are semiconductors, and a PN junction is formed between the first control layer and the second control layer.

[0011] Optionally, the friction control device based on the super-lubricated semiconductor heterojunction further includes a bias circuit, the two ends of which are respectively connected to the first control layer and the second control layer, and the bias circuit further includes a voltage output element that applies bias towards the first control layer and the second control layer.

[0012] Optionally, the friction control device based on the structurally superlubricated semiconductor heterojunction further includes: a first metal layer located on the side of the first control layer opposite to the second control layer; the first control layer is electrically connected to the first metal layer;

[0013] The conductivity of the first metal layer is greater than that of the first control layer.

[0014] Optionally, the friction control device based on the structurally superlubricated semiconductor heterojunction further includes: a second metal layer located on the side of the second control layer opposite to the first control layer; the second control layer is electrically connected to the second metal layer;

[0015] The conductivity of the second metal layer is greater than that of the second control layer.

[0016] Optionally, the first control layer includes a first contact surface that contacts the second control layer, and the second control layer includes a second contact surface that contacts the first control layer;

[0017] The first contact surface is a van der Waals interface, and the second contact surface is an atomically flat surface; or,

[0018] Both the first contact surface and the second contact surface are van der Waals interfaces; or,

[0019] The first contact surface is an atomically flat surface, and the second contact surface is a van der Waals interface.

[0020] Optionally, when one of the first control layer and the second control layer is a conductor and the other is a semiconductor, and the conductor includes the van der Waals interface and the semiconductor includes the atomically flat surface, the material of the conductor includes graphite or graphene, and the material of the semiconductor includes any one of silicon, gallium arsenide, indium gallium arsenide, zinc oxide, germanium, gallium nitride, and indium phosphide; or,

[0021] When one of the first control layer and the second control layer is a conductor and the other is a semiconductor, and both the conductor and the semiconductor include the van der Waals interface, the material of the conductor includes graphite or graphene, and the material of the semiconductor includes any one of molybdenum disulfide, tungsten diselenide, tungsten disulfide, and black phosphorus; or,

[0022] When one of the first control layer and the second control layer is a conductor and the other is a semiconductor, and the conductor includes the atomically flat surface and the semiconductor includes the van der Waals interface, the material of the conductor is a metallic material and the material of the semiconductor includes any one of molybdenum disulfide, tungsten diselenide, tungsten disulfide and black phosphorus.

[0023] Optionally, when both the first control layer and the second control layer are semiconductors, and the P-type semiconductor includes the van der Waals interface and the N-type semiconductor includes the atomically flat surface, the material of the P-type semiconductor includes any one of tungsten diselenide, tungsten disulfide, and black phosphorus, and the material of the N-type semiconductor includes any one of gallium arsenide, zinc oxide, gallium nitride, indium phosphide, silicon, and germanium; or,

[0024] When both the first control layer and the second control layer are semiconductors, and both the P-type semiconductor and the N-type semiconductor include the van der Waals interface, the material of the P-type semiconductor includes any one of tungsten diselenide, tungsten disulfide, and black phosphorus, and the material of the N-type semiconductor includes any one of molybdenum disulfide, tungsten diselenide, and tungsten disulfide; or...

[0025] When both the first control layer and the second control layer are semiconductors, and the P-type semiconductor includes the atomically flat surface and the N-type semiconductor includes the van der Waals interface, the material of the P-type semiconductor includes any one of silicon, gallium arsenide and germanium, and the material of the N-type semiconductor includes any one of molybdenum disulfide, tungsten diselenide and tungsten disulfide.

[0026] Optionally, when the bias voltage applied to the first control layer and the second control layer is within a preset bias voltage range, the friction force generated by the relative motion of the first control layer and the second control layer is the first friction force.

[0027] When the bias voltage applied to the first control layer and the second control layer is the second bias voltage, the frictional force generated by the relative motion of the first control layer and the second control layer is the second frictional force.

[0028] The second frictional force is greater than the first frictional force.

[0029] Optionally, the preset bias voltage range is [-8V, 8V].

[0030] Secondly, the present invention provides a friction control system based on a structurally superlubricated semiconductor heterojunction, comprising: any of the friction control devices based on a structurally superlubricated semiconductor heterojunction provided by the present invention.

[0031] The technical solution of this invention utilizes an ultra-slippery contact surface between the first and second control layers. Simultaneously, a semiconductor heterojunction is formed between the first and second control layers. When different bias voltages are applied to the first and second control layers, the frictional forces generated by their relative motion differ. This allows for continuous variation of the frictional force of the friction control device based on the ultra-slippery semiconductor heterojunction from an extremely low to an extremely high state, making it suitable for various application scenarios. Furthermore, the frictional force variation of the microelectromechanical device provided by this invention is reversible, and its service life is unlimited. Additionally, this friction control device does not require lubricant and has a strong load-bearing capacity.

[0032] It should be understood that the description in this section is not intended to identify key or essential features of the embodiments of the present invention, nor is it intended to limit the scope of the invention. Other features of the invention will become readily apparent from the following description. Attached Figure Description

[0033] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0034] Figure 1 A schematic diagram of a friction control device based on a structurally superlubricating semiconductor heterojunction provided in an embodiment of the present invention;

[0035] Figure 2 Friction test diagram of a friction control device based on a structurally superlubricating semiconductor heterojunction provided in an embodiment of the present invention;

[0036] Figure 3 An atomic force microscopy scan of the contact surface between the first control layer and the second control layer in a tribological control device based on a structurally superlubricated semiconductor heterojunction provided in an embodiment of the present invention.

[0037] Figure 4 The graph shows the relationship between frictional force and current under different bias voltages for a tribological control device based on a structurally superlubricated semiconductor heterojunction provided in an embodiment of the present invention.

[0038] Figure 5A schematic diagram of another tribological control device based on a structurally superlubricating semiconductor heterojunction provided in an embodiment of the present invention;

[0039] Figure 6 A schematic diagram of another friction control device based on a structurally superlubricating semiconductor heterojunction provided in an embodiment of the present invention;

[0040] Figure 7 This is a schematic diagram of another friction control device based on a structurally superlubricating semiconductor heterojunction provided in an embodiment of the present invention. Detailed Implementation

[0041] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.

[0042] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the invention described herein can be implemented in sequences other than those illustrated or described herein.

[0043] Figure 1 A schematic diagram of a friction control device based on a structurally superlubricating semiconductor heterojunction is provided in an embodiment of the present invention, as shown below. Figure 1 As shown, the friction control device based on a super-slip semiconductor heterojunction includes: a first control layer 100 and a second control layer 200 stacked together; the first control layer 100 and the second control layer 200 are in contact and can slide relative to each other, and the contact surface between the first control layer 100 and the second control layer 200 is a super-slip contact surface; a semiconductor heterojunction is formed between the first control layer 100 and the second control layer 200; when different bias voltages are applied to the first functional layer 100 and the second functional layer 200, the frictional forces generated by the relative movement of the first functional layer 100 and the second functional layer 200 are different.

[0044] The contact surface between the first control layer 100 and the second control layer 200 is a super-slippery contact surface, meaning that when no bias voltage is applied to the first control layer 100 and the second control layer 200, the frictional force generated by the relative movement of the first control layer 100 and the second control layer 200 is almost zero or even completely disappears, the coefficient of friction is less than one-thousandth, and the wear at the contact surface between the first control layer 100 and the second control layer 200 is zero.

[0045] Specifically, the contact surface between the first control layer 100 and the second control layer 200 is a super-slippery contact, and a semiconductor heterojunction is formed between the first control layer 100 and the second control layer 200. In this case, one of the first control layer 100 and the second control layer 200 is a semiconductor material, and the band gaps of the first control layer 100 and the second control layer 200 are different. When the energy-harvesting element drives the first control layer 100 or the second control layer 200 to move, different bias voltages can be applied to the first control layer 100 and the second control layer 200 to cause the frictional force at the contact surface of the first control layer 100 and the second control layer 200 to vary between extremely low and extremely high states. This variation can be continuous; for example, the frictional force in the extremely high state can be six times the frictional force in the extremely low state. Thus, when the microelectromechanical device (MEMS) requires a lower frictional force, a bias voltage corresponding to the lower frictional force can be applied to the first control layer 100 and the second control layer 200; and when the MEMS requires a higher frictional force, a bias voltage corresponding to the higher frictional force can be applied to the first control layer 100 and the second control layer 200, thereby making the frictional force in the friction control device controllable and realizing friction control of the friction control device.

[0046] At the same time, different bias voltages are applied to the first control layer 100 and the second control layer 200, causing the frictional force at the contact surface between the first control layer 100 and the second control layer 200 to change. After the bias voltages applied to the first control layer 100 and the second control layer 200 are removed, the first control layer 100 and the second control layer 200 can return to the super-slippery state, that is, return to the state of no friction.

[0047] For example, Figure 2 The friction test diagrams for the friction control device based on a structurally superlubricated semiconductor heterojunction provided in this embodiment of the invention are shown in the reference diagram. Figure 1 and Figure 2When the bias voltage alternates between 0V and 2V, the frictional force at the contact surface of the first control layer 100 and the second control layer 200 can also vary between small and large frictional forces. Specifically, when the applied bias voltage is 0V, the frictional force at the contact surface of the first control layer 100 and the second control layer 200 is 0.4μN, while when the applied bias voltage is 2V, the frictional force at the contact surface of the first control layer 100 and the second control layer 200 can reach 0.5μN. Furthermore, when the bias voltage alternates between 0V and 2V 1500 times, the change in frictional force at the contact surface of the first control layer 100 and the second control layer 200 remains essentially consistent. Thus, while the frictional force at the contact surface of the first control layer 100 and the second control layer 200 can vary as needed, the friction control device can be reused indefinitely, thereby improving its service life.

[0048] also, Figure 3 The atomic force microscopy (AFM) scan of the contact surface between the first control layer and the second control layer in the tribological control device based on a structurally superlubricated semiconductor heterojunction provided in this embodiment of the invention, in conjunction with reference to the reference. Figure 1-3 As shown, after performing a friction test on the friction control device using atomic force microscopy, the morphology of the contact surface between the first control layer 100 and the second control layer 200 is revealed. It can be seen that the sliding area of ​​the contact surface between the first control layer 100 and the second control layer 200 shows no wear or scratches, indicating that the contact surface between the first control layer 100 and the second control layer 200 is free from wear. Furthermore, since the contact between the first control layer 100 and the second control layer 200 is super-slippery, there is no need to add lubricants or other materials between them. Therefore, even if there is compressive force between the first control layer 100 and the second control layer 200, it will not affect the frictional state of the first control layer 100 and the second control layer 200, resulting in a high load-bearing capacity, for example, a load-bearing capacity exceeding 0.74 GPa.

[0049] As an optional embodiment, Figure 4 The graph showing the relationship between frictional force and current under different bias voltages for the tribological control device based on a structurally superlubricated semiconductor heterojunction provided in this embodiment of the invention, in conjunction with reference... Figure 1 and Figure 4As shown, when the bias voltage applied to the first control layer 100 and the second control layer 200 is within a preset bias voltage range, the frictional force generated by the relative movement of the first control layer 100 and the second control layer 200 is the first frictional force; when the bias voltage applied to the first control layer 100 and the second control layer 200 is the second bias voltage, the frictional force generated by the relative movement of the first control layer 100 and the second control layer 200 is the second frictional force, and the second frictional force is greater than the first frictional force. The preset bias voltage range can be [-8V, 8V].

[0050] Specifically, when the bias voltage applied to the first control layer 100 and the second control layer 200 is near 0V, the carrier concentration in the space charge region formed at the contact interface of the first control layer 100 and the second control layer 200 is relatively small, resulting in a smaller current flowing through the first control layer 100 and the second control layer 200. In other words, there are fewer free electrons in the first control layer 100 and the second control layer 200, and the contact surface of the first control layer 100 and the second control layer 200 has a smaller frictional force. Theoretically, when no bias voltage is applied between the first control layer 100 and the second control layer 200 or the bias voltage is 0, the frictional force at the contact surface of the first control layer 100 and the second control layer 200 is minimal. As the bias voltage applied to the first control layer 100 and the second control layer 200 moves further away from 0V, the carrier concentration in the space charge region formed at the contact interface of the first control layer 100 and the second control layer 200 increases. This leads to a gradual increase in the current flowing through the first control layer 100 and the second control layer 200, meaning there are more free electrons in the first control layer 100 and the second control layer 200. Consequently, the frictional force at the contact surface of the first control layer 100 and the second control layer 200 increases. In other words, whether the voltage on the first control layer 100 is greater than the voltage on the second control layer 200, or vice versa, the frictional force at their contact surface will increase accordingly. Thus, based on the relationship between bias voltage, current, and frictional force, frictional control of a tribological control device based on a structurally superlubricated semiconductor heterojunction can be achieved.

[0051] Optionally, one of the first control layer 100 and the second control layer 200 is a conductor and the other is a semiconductor, and a Schottky junction is formed between the first control layer 100 and the second control layer 200; or, both the first control layer 100 and the second control layer 200 are semiconductors, and a PN junction is formed between the first control layer 100 and the second control layer 200.

[0052] Specifically, when one of the first control layer 100 and the second control layer 200 is a conductor and the other is a semiconductor, the first control layer 100 and the second control layer 200 are in contact. At the interface, the energy band of the semiconductor bends, forming a Schottky junction. When a bias voltage is applied to the first control layer 100 and the second control layer 200, the majority carriers in the semiconductor enter the conductor, forming a corresponding current. For example, when the semiconductor is an N-type semiconductor, electrons cross the metal interface from the semiconductor into the conductor, forming a current between the semiconductor and the conductor; when the semiconductor is a P-type semiconductor, holes cross the metal interface from the semiconductor into the conductor, forming a current between the semiconductor and the conductor. The height of the Schottky barrier at the contact interface between the semiconductor and the conductor changes with the bias voltage applied between the first control layer 100 and the second control layer 200, resulting in different frictional forces generated by the relative movement of the first control layer 100 and the second control layer 200.

[0053] Similarly, when both the first control layer 100 and the second control layer 200 are semiconductors, one layer can be a P-type semiconductor and the other can be an N-type semiconductor. Since the first control layer 100 and the second control layer 200 are in contact, i.e., the P-type semiconductor and the N-type semiconductor are in contact, a space charge region is formed near the contact surface. An internal electric field exists in the space charge region, pointing from the N-type semiconductor to the P-type semiconductor. The presence of this internal electric field hinders the diffusion of charge carriers. When the bias voltage applied between the first control layer 100 and the second control layer 200 changes, the width of the space charge region changes, causing a change in the magnitude of the resistance of the internal electric field to the diffusion of charge carriers. This results in different frictional forces generated by the relative motion of the first control layer 100 and the second control layer 200.

[0054] It should be noted that, since the contact surface between the first control layer 100 and the second control layer 200 is an ultra-slippery contact surface, the frictional force at the contact surface between the first control layer 100 and the second control layer 200 is theoretically minimal when no bias voltage is applied or the applied bias voltage is 0V.

[0055] Optional, continue to refer to Figure 1 As shown, the friction control device based on the super-lubricating semiconductor heterojunction also includes a bias circuit 500, the two ends of which are respectively connected to the first control layer 100 and the second control layer 200, and the bias circuit 500 also includes a voltage output element (not shown in the figure) that applies a bias voltage to the first control layer 100 and the second control layer 200.

[0056] Specifically, the bias circuit 500 applies a bias voltage to the first control layer 100 and the second control layer 200 through a voltage output element. By changing the magnitude of the bias voltage, the frictional force at the contact surface between the first control layer 100 and the second control layer 200 changes. After the bias voltage applied to the first control layer 100 and the second control layer 200 is removed, the first control layer 100 and the second control layer 200 can return to a super-slippery state, that is, return to a frictionless state. This enables the frictional force in the friction control device to be controllable, realizing frictional control of the friction control device based on the super-slippery semiconductor heterojunction. The bias circuit 500 includes, but is not limited to, a bias source.

[0057] Optional, Figure 5 A schematic diagram of another friction control device based on a structurally superlubricated semiconductor heterojunction provided in an embodiment of the present invention is shown below. Figure 5 As shown, the friction control device based on the super-lubricating semiconductor heterojunction further includes: a first metal layer 300 located on the side of the first control layer 100 away from the second control layer 200; the first control layer 100 and the first metal layer 300 are electrically connected; wherein the conductivity of the first metal layer 300 is greater than the conductivity of the first control layer 100.

[0058] The first metal layer 300 is disposed on one side of the first control layer 100. The first metal layer 300 can form an ohmic contact or a Schottky contact with the first control layer 100. The conductivity of the first metal layer 300 is greater than that of the first control layer 100, so that when a bias voltage is applied, the bias signal can be introduced from the first metal layer 300 to the first control layer 100 more quickly. In addition, since the first metal layer 300 has a certain rigidity, it can support the first control layer 100 and prevent the first control layer 100 from deforming.

[0059] In an exemplary embodiment, the material of the first metal layer 300 may include at least one of gold, silver, copper, iron, tin, platinum, mercury, aluminum, zinc, titanium, tungsten, lead, nickel, etc., to ensure that the first metal layer 300 has high conductivity.

[0060] Optional, Figure 6 A schematic diagram of another friction control device based on a structurally superlubricated semiconductor heterojunction provided in this embodiment of the invention is shown below. Figure 6 As shown, the friction control device based on the super-lubricating semiconductor heterojunction further includes: a second metal layer 400 located on the side of the second control layer 200 opposite to the first control layer 100; the second control layer 200 and the second metal layer 400 are electrically connected; wherein the conductivity of the second metal layer 400 is greater than that of the second control layer 200.

[0061] The second metal layer 400 is disposed on one side of the second control layer 200. The second metal layer 400 can form an ohmic contact or a Schottky contact with the second control layer 200. The conductivity of the second metal layer 400 is greater than that of the second control layer 200, so that when a bias voltage is applied, the bias signal can be introduced from the second metal layer 400 to the second control layer 200 more quickly. In addition, since the second metal layer 400 has a certain degree of rigidity, it can support the second control layer 200 and prevent the second control layer 200 from deforming.

[0062] In one exemplary embodiment, the material of the second metal layer 400 includes at least one of gold, silver, copper, iron, tin, platinum, mercury, aluminum, zinc, titanium, tungsten, lead, nickel, etc., to ensure that the second metal layer 400 has high electrical conductivity.

[0063] As an optional embodiment, Figure 7 A schematic diagram of another friction control device based on a structurally superlubricated semiconductor heterojunction provided in this embodiment of the invention is shown below. Figure 7 As shown, the friction control device based on a structurally superlubricated semiconductor heterojunction provided in this embodiment may further include a first metal layer 300 located on the side of the first control layer 100 facing away from the second control layer 200, and a second metal layer 400 located on the side of the second control layer 200 facing away from the first control layer 100. The first control layer 100 and the first metal layer 300 are electrically connected, and the conductivity of the first metal layer 300 is greater than that of the first control layer 100. The second control layer 200 and the second metal layer 400 are also electrically connected, and the conductivity of the second metal layer 400 is greater than that of the second control layer 200. Its beneficial effects can be found in the description above.

[0064] Optionally, the first control layer 100 includes a first contact surface 110 that contacts the second control layer 200, and the second control layer 200 includes a second contact surface 210 that contacts the first control layer 100; the first contact surface 110 is a van der Waals interface, and the second contact surface 210 is an atomically flat surface; or, both the first contact surface 110 and the second contact surface 210 are van der Waals interfaces; or, the first contact surface 110 is an atomically flat surface, and the second contact surface 210 is a van der Waals interface.

[0065] Here, a van der Waals interface refers to a two-dimensional interface of a single crystal, that is, an interface of a material where electrons can only move freely in two nanoscale dimensions. Van der Waals forces exist only in these two dimensions and there are no dangling bonds. An atomically flat surface refers to a surface with a surface roughness of less than 1 nm. Of the first contact surface 110 and the second contact surface 210, one must be a van der Waals interface and the other must be either a van der Waals interface or an atomically flat surface. Therefore, the first contact surface 110 and the second contact surface 210 can exist in the following three forms: the first contact surface 110 is a van der Waals interface and the second contact surface 210 is an atomically flat surface; or both the first contact surface 110 and the second contact surface 210 are van der Waals interfaces; or the first contact surface 110 is an atomically flat surface and the second contact surface 210 is a van der Waals interface.

[0066] Optionally, when one of the first control layer 100 and the second control layer 200 is a conductor and the other is a semiconductor, and the conductor includes a van der Waals interface and the semiconductor includes an atomically flat surface, the material of the conductor includes graphite or graphene, and the material of the semiconductor includes any one of silicon, gallium arsenide, indium gallium arsenide, zinc oxide, germanium, gallium nitride and indium phosphide.

[0067] When one of the first control layer 100 and the second control layer 200 is a conductor and the other is a semiconductor, and both the conductor and the semiconductor include a van der Waals interface, the material of the conductor includes graphite or graphene, and the material of the semiconductor includes any one of molybdenum disulfide, tungsten diselenide, tungsten disulfide and black phosphorus.

[0068] When one of the first control layer 100 and the second control layer 200 is a conductor and the other is a semiconductor, and the conductor includes an atomically flat surface and the semiconductor includes the van der Waals interface, the material of the conductor is a metallic material and the material of the semiconductor includes any one of molybdenum disulfide, tungsten diselenide, tungsten disulfide and black phosphorus.

[0069] Optionally, when both the first control layer 100 and the second control layer 200 are semiconductors, and the P-type semiconductor includes a van der Waals interface and the N-type semiconductor includes an atomically flat surface, the material of the P-type semiconductor includes any one of tungsten diselenide, tungsten disulfide and black phosphorus, and the material of the N-type semiconductor includes any one of gallium arsenide, zinc oxide, gallium nitride, indium phosphide, silicon and germanium.

[0070] When both the first control layer 100 and the second control layer 200 are semiconductors, and both the P-type semiconductor and the N-type semiconductor include van der Waals interfaces, the material of the P-type semiconductor includes any one of tungsten diselenide, tungsten disulfide, and black phosphorus, and the material of the N-type semiconductor includes any one of molybdenum disulfide, tungsten diselenide, and tungsten disulfide.

[0071] When both the first control layer 100 and the second control layer 200 are semiconductors, and the P-type semiconductor includes an atomically flat surface and the N-type semiconductor includes a van der Waals interface, the material of the P-type semiconductor includes any one of silicon, gallium arsenide and germanium, and the material of the N-type semiconductor includes any one of molybdenum disulfide, tungsten diselenide and tungsten disulfide.

[0072] Based on the same inventive concept, embodiments of the present invention also provide a friction control system based on a structurally superlubricated semiconductor heterojunction, characterized in that it includes: a friction control device based on a structurally superlubricated semiconductor heterojunction provided in any embodiment of the present invention. Therefore, this friction control system possesses the technical features of the friction control device provided in the embodiments of the present invention and can achieve the beneficial effects of the friction control device provided in the embodiments of the present invention; similarities can be found in the above description.

[0073] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.

Claims

1. A friction control device based on a structurally superlubricating semiconductor heterojunction, characterized in that, include: A first control layer and a second control layer are stacked together; The first control layer is in contact with the second control layer, and the first control layer and the second control layer can slide relative to each other. The contact surface between the first control layer and the second control layer is a super-slippery contact surface. A semiconductor heterojunction is formed between the first control layer and the second control layer; when different bias voltages are applied to the first control layer and the second control layer, the frictional forces generated by the relative motion of the first control layer and the second control layer are different; One of the first control layer and the second control layer is a conductor, and the other is a semiconductor, and a Schottky junction is formed between the first control layer and the second control layer; or, Both the first control layer and the second control layer are semiconductors, and a PN junction is formed between the first control layer and the second control layer; When different bias voltages are applied to the first control layer and the second control layer, the frictional force generated by the relative motion of the first control layer and the second control layer can be continuously changed by adjusting the carrier concentration in the space charge region of the Schottky junction or PN junction. The first control layer and the second control layer are in direct contact.

2. The friction control device based on a structurally superlubricated semiconductor heterojunction according to claim 1, characterized in that, It also includes a bias circuit, the two ends of which are respectively connected to the first control layer and the second control layer, and the bias circuit also includes a voltage output element that applies bias towards the first control layer and the second control layer.

3. The friction control device based on a structurally superlubricated semiconductor heterojunction according to claim 2, characterized in that, It also includes: a first metal layer located on the side of the first control layer opposite to the second control layer; the first control layer is electrically connected to the first metal layer; The conductivity of the first metal layer is greater than that of the first control layer.

4. The friction control device based on a structurally superlubricated semiconductor heterojunction according to claim 2, characterized in that, It also includes: a second metal layer located on the side of the second control layer opposite to the first control layer; the second control layer is electrically connected to the second metal layer; The conductivity of the second metal layer is greater than that of the second control layer.

5. The friction control device based on a structurally superlubricated semiconductor heterojunction according to claim 1, characterized in that, The first control layer includes a first contact surface that contacts the second control layer, and the second control layer includes a second contact surface that contacts the first control layer; The first contact surface is a van der Waals interface, and the second contact surface is an atomically flat surface; or, Both the first contact surface and the second contact surface are van der Waals interfaces; or, The first contact surface is an atomically flat surface, and the second contact surface is a van der Waals interface.

6. The friction control device based on a structurally superlubricated semiconductor heterojunction according to claim 5, characterized in that, When one of the first control layer and the second control layer is a conductor and the other is a semiconductor, and the conductor includes the van der Waals interface and the semiconductor includes the atomically flat surface, the material of the conductor includes graphite or graphene, and the material of the semiconductor includes any one of silicon, gallium arsenide, indium gallium arsenide, zinc oxide, germanium, gallium nitride, and indium phosphide; or, When one of the first control layer and the second control layer is a conductor and the other is a semiconductor, and both the conductor and the semiconductor include the van der Waals interface, the material of the conductor includes graphite or graphene, and the material of the semiconductor includes any one of molybdenum disulfide, tungsten diselenide, tungsten disulfide, and black phosphorus; or, When one of the first control layer and the second control layer is a conductor and the other is a semiconductor, and the conductor includes the atomically flat surface and the semiconductor includes the van der Waals interface, the material of the conductor is a metallic material and the material of the semiconductor includes any one of molybdenum disulfide, tungsten diselenide, tungsten disulfide and black phosphorus.

7. The friction control device based on a structurally superlubricated semiconductor heterojunction according to claim 5, characterized in that, When both the first control layer and the second control layer are semiconductors, and the P-type semiconductor includes the van der Waals interface and the N-type semiconductor includes the atomically flat surface, the material of the P-type semiconductor includes any one of tungsten diselenide, tungsten disulfide, and black phosphorus, and the material of the N-type semiconductor includes any one of gallium arsenide, zinc oxide, gallium nitride, indium phosphide, silicon, and germanium; or, When both the first control layer and the second control layer are semiconductors, and both the P-type semiconductor and the N-type semiconductor include the van der Waals interface, the material of the P-type semiconductor includes any one of tungsten diselenide, tungsten disulfide, and black phosphorus, and the material of the N-type semiconductor includes any one of molybdenum disulfide, tungsten diselenide, and tungsten disulfide; or... When both the first control layer and the second control layer are semiconductors, and the P-type semiconductor includes the atomically flat surface and the N-type semiconductor includes the van der Waals interface, the material of the P-type semiconductor includes any one of silicon, gallium arsenide and germanium, and the material of the N-type semiconductor includes any one of molybdenum disulfide, tungsten diselenide and tungsten disulfide.

8. The friction control device based on a structurally superlubricated semiconductor heterojunction according to claim 1, characterized in that, When the bias voltage applied to the first control layer and the second control layer is within a preset bias voltage range, the frictional force generated by the relative motion of the first control layer and the second control layer is the first frictional force. When the bias voltage applied to the first control layer and the second control layer is the second bias voltage, the frictional force generated by the relative motion of the first control layer and the second control layer is the second frictional force. The second frictional force is greater than the first frictional force.

9. The tribological control device based on a structurally superlubricating semiconductor heterojunction according to claim 8, characterized in that, The preset bias voltage range is [-8V, 8V].

10. A friction control system based on a structurally superlubricated semiconductor heterojunction, characterized in that, include: The friction control device based on a structurally superlubricating semiconductor heterojunction as described in any one of claims 1-9.

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