Calibration methods for CVD equipment and CVD equipment, storage media, and electronic devices

Abstract

This invention discloses a calibration method for CVD equipment, as well as the CVD equipment, storage medium, and electronic device. The method includes acquiring a target capacitance value collected by a level sensor on the chemical vapor deposition (CVD) equipment. The CVD equipment includes a stage and a spray head. The level sensor is embedded in the stage and connected to a capacitor, whose two plates are respectively disposed on the stage and the spray head. The method determines whether there is a positional deviation between the stage and the spray head based on the target capacitance value. If a positional deviation exists, the stage is calibrated according to the target capacitance value. This invention solves the technical problem of low efficiency in adjusting the position between the stage and the spray head in CVD equipment, improves accuracy compared to manual measurement, enhances the quality of thin film deposition in mass production, ensures deposition uniformity, and is suitable for ultra-large-scale mass production.

Description

Technical Field

[0001] This invention relates to the field of chemical vapor deposition (CVD) equipment technology, and more specifically, to a calibration method for CVD equipment, as well as CVD equipment, storage media, and electronic equipment. Background Technology

[0002] In related technologies, within CVD equipment, the shower head directs the deposition gas towards the wafer surface. The wafer is typically placed on a susceptor, so the distance between the susceptor and the shower head must be maintained at the required level for the process, ideally keeping them parallel to ensure uniform film deposition. However, in actual processes, the susceptor may tilt due to repeated mechanical movements, causing shifts in the distance and parallelism between it and the shower head, thus affecting the uniformity of film deposition.

[0003] Existing technologies typically address this issue by cooling the cavity to open it, manually checking the tilt of the stage with a level, measuring the distance between them, and then manually making adjustments. This process is cumbersome and time-consuming, and it cannot be monitored or adjusted in real time during the process; it can only be monitored at fixed intervals, resulting in low efficiency.

[0004] There are currently no effective solutions to the aforementioned problems in the relevant technologies. Summary of the Invention

[0005] To address the technical problem of low efficiency when adjusting the position between the stage and the spray head in a CVD device, this invention provides a calibration method for a CVD device, as well as the CVD device, storage medium, and electronic equipment.

[0006] According to one aspect of the embodiments of this application, a calibration method for a CVD (Chemical Vapor Deposition) device is provided, comprising: acquiring a target capacitance value collected by a level sensor on a chemical vapor deposition (CVD) device, wherein the CVD device includes a wafer stage and a spray head, the level sensor is embedded in the wafer stage, the level sensor is connected to a capacitor, and the two plates of the capacitor are respectively disposed on the wafer stage and the spray head; determining whether there is a positional deviation between the wafer stage and the spray head based on the target capacitance value; and if there is a positional deviation between the wafer stage and the spray head, calibrating the position of the wafer stage based on the target capacitance value.

[0007] Further, determining whether there is a positional deviation between the wafer stage and the spray head based on the target capacitance value includes: determining the reference capacitance value of the CVD equipment, wherein the reference capacitance value corresponds to the height between the wafer stage and the spray head required by the process of the CVD equipment; determining whether the difference between the target capacitance value and the reference capacitance value is less than a first threshold; if the difference between the target capacitance value and the reference capacitance value is less than the first threshold, determining that there is no height deviation between the wafer stage and the spray head; if the difference between the target capacitance value and the reference capacitance value is greater than or equal to the first threshold, determining that there is a height deviation between the wafer stage and the spray head, wherein the positional deviation includes the height deviation.

[0008] Furthermore, if there are multiple capacitors, before determining whether the difference between the target capacitance value and the reference capacitance value is less than a first threshold, the method further includes: determining a set of capacitance values ​​of multiple capacitors collected by the horizontal sensor; calculating the average capacitance value of the set of capacitance values; and determining the average capacitance value as the target capacitance value.

[0009] Furthermore, the number of capacitors is multiple, and these capacitors are distributed at different mounting points on the substrate stage. Determining whether there is a positional deviation between the substrate stage and the spray head based on the target capacitance value includes: determining the set of capacitance values ​​of the multiple capacitors collected by the level sensor; calculating the absolute value of the difference between every two capacitance values ​​in the set of capacitance values ​​to obtain a set of absolute values; determining whether there is a specified absolute value in the set of absolute values ​​that is greater than a second threshold; if there is a specified absolute value in the set of absolute values ​​that is greater than the second threshold, determining that there is a tilt deviation between the substrate stage and the spray head; if there is no specified absolute value in the set of absolute values ​​that is greater than the second threshold, determining that there is no tilt deviation between the substrate stage and the spray head, wherein the positional deviation includes the tilt deviation.

[0010] Further, the positional deviation includes the height deviation. If there is a positional deviation between the wafer stage and the spray head, calibrating the position of the wafer stage according to the target capacitance value includes: if there is a height deviation between the wafer stage and the spray head, calculating a first difference between the target capacitance value and a reference capacitance value, wherein the reference capacitance value corresponds to the height between the wafer stage and the spray head required by the process of the CVD equipment; calculating a first plate height difference of the capacitor based on the first difference, wherein the plate height of the capacitor is negatively correlated with the capacitance value; and outputting first calibration information based on the first plate height difference, wherein the first calibration information is used to indicate that the wafer stage relative to the spray head should be adjusted as a whole in the vertical direction according to the first plate height difference.

[0011] Further, if there is a positional deviation between the substrate stage and the spray head, the position calibration of the substrate stage according to the target capacitance value includes: if there is a tilt deviation between the substrate stage and the spray head, calculating a second difference between the specified absolute value and the second threshold, and locating the mounting point of the capacitor corresponding to the specified absolute value on the substrate stage; calculating the second plate height difference of the capacitor according to the second difference, wherein the plate height of the capacitor is negatively correlated with the capacitance value; and outputting second calibration information based on the second plate height difference, wherein the second calibration information is used to indicate that the mounting point of the substrate stage relative to the spray head should be adjusted in the vertical direction to adjust the second plate height difference.

[0012] Furthermore, before calculating the second difference between the specified absolute value and the second threshold, the method further includes: selecting the largest absolute value from the set of absolute values; and determining the largest absolute value as the specified absolute value.

[0013] According to another aspect of the embodiments of this application, a CVD apparatus is also provided, comprising: an acquisition module for acquiring a target capacitance value collected by a level sensor on a chemical vapor deposition CVD apparatus, wherein the CVD apparatus includes a wafer stage and a spray head, the level sensor is embedded in the wafer stage, the level sensor is connected to a capacitor, and the two plates of the capacitor are respectively disposed on the wafer stage and the spray head; a judgment module for judging whether there is a positional deviation between the wafer stage and the spray head based on the target capacitance value; and a calibration module for calibrating the position of the wafer stage based on the target capacitance value if there is a positional deviation between the wafer stage and the spray head.

[0014] Further, the determination module includes: a first determining unit, configured to determine a reference capacitance value of the CVD equipment, wherein the reference capacitance value corresponds to the height between the wafer stage and the spray head as required by the process of the CVD equipment; a first determining unit, configured to determine whether the difference between the target capacitance value and the reference capacitance value is less than a first threshold; a second determining unit, configured to determine that there is no height deviation between the wafer stage and the spray head if the difference between the target capacitance value and the reference capacitance value is less than the first threshold; and to determine that there is a height deviation between the wafer stage and the spray head if the difference between the target capacitance value and the reference capacitance value is greater than or equal to the first threshold, wherein the positional deviation includes the height deviation.

[0015] Furthermore, if there are multiple capacitors, the judgment module further includes: a third determining unit, used to determine the set of capacitance values ​​of multiple capacitors collected by the horizontal sensor before the first determining unit determines whether the difference between the target capacitance value and the reference capacitance value is less than a first threshold; a first calculation unit, used to calculate the average capacitance value of the set of capacitance values; and a fourth determining unit, used to determine the average capacitance value as the target capacitance value.

[0016] Furthermore, the number of capacitors is multiple, and the multiple capacitors are distributed at different mounting points on the substrate stage. The judgment module includes: a fifth determining unit, used to determine the set of capacitance values ​​of the multiple capacitors collected by the horizontal sensor; a second calculation unit, used to calculate the absolute value of the difference between every two capacitance values ​​in the set of capacitance values ​​to obtain a set of absolute values; a second judging unit, used to judge whether there is a specified absolute value in the set of absolute values ​​that is greater than a second threshold; a sixth determining unit, used to determine that there is a tilt deviation between the substrate stage and the spray head if there is a specified absolute value in the set of absolute values ​​that is greater than the second threshold; and to determine that there is no tilt deviation between the substrate stage and the spray head if there is no specified absolute value in the set of absolute values ​​that is greater than the second threshold, wherein the positional deviation includes the tilt deviation.

[0017] Further, the positional deviation includes the height deviation, and the calibration module includes: a first calculation unit, configured to calculate a first difference between the target capacitance value and the reference capacitance value if there is a height deviation between the wafer stage and the spray head, wherein the reference capacitance value corresponds to the height between the wafer stage and the spray head required by the process of the CVD equipment; a second calculation unit, configured to calculate the first plate height difference of the capacitor based on the first difference, wherein the plate height of the capacitor is negatively correlated with the capacitance value; and a first control unit, configured to output first calibration information based on the first plate height difference, wherein the first calibration information is used to instruct the wafer stage to be adjusted as a whole relative to the spray head in the vertical direction to adjust the first plate height difference.

[0018] Further, the calibration module includes: a third calculation unit, configured to calculate a second difference between a specified absolute value and a second threshold if there is a tilt deviation between the stage and the spray head, and to locate the mounting point of the capacitor corresponding to the specified absolute value on the stage; a fourth calculation unit, configured to calculate the second plate height difference of the capacitor based on the second difference, wherein the plate height of the capacitor is negatively correlated with the capacitance value; and a second control unit, configured to output second calibration information based on the second plate height difference, wherein the second calibration information is used to instruct the mounting point of the stage relative to the spray head in the vertical direction to adjust the second plate height difference.

[0019] Furthermore, the calibration module further includes: a fifth calculation unit, configured to select the largest absolute value from the set of absolute values ​​before the third calculation unit calculates the second difference between the specified absolute value and the second threshold; and a determination unit, configured to determine the largest absolute value as the specified absolute value.

[0020] According to another aspect of the embodiments of this application, a storage medium is also provided, the storage medium including a stored program, wherein the program executes the above-described method steps when it runs.

[0021] According to another aspect of the embodiments of this application, an electronic device is also provided, including a processor, a communication interface, a memory, and a communication bus, wherein the processor, the communication interface, and the memory communicate with each other through the communication bus; wherein: the memory is used to store computer programs; and the processor is used to execute the above-described method steps by running the programs stored in the memory.

[0022] This application also provides a computer program product containing instructions that, when run on a computer, cause the computer to perform the steps in the above-described method.

[0023] This invention obtains the target capacitance value collected by a horizontal sensor on a chemical vapor deposition (CVD) device. The CVD device includes a stage and a spray head. The horizontal sensor is embedded in the stage and connected to a capacitor, whose two plates are respectively positioned on the stage and the spray head. The invention determines whether there is a positional deviation between the stage and the spray head based on the target capacitance value. If a positional deviation exists, the stage is calibrated according to the target capacitance value. This allows for real-time detection of the distance between the stage and the spray head, as well as the tilt of the stage itself, and real-time adjustment of the stage height and tilt. This solves the technical problem of low efficiency in adjusting the position between the stage and the spray head in CVD equipment, compared to manual measurement, while improving accuracy, enhancing the film deposition quality in mass production, ensuring deposition uniformity, and making it suitable for ultra-large-scale mass production. Attached Figure Description

[0024] The accompanying drawings, which are included to provide a further understanding of the invention and form part of this application, illustrate exemplary embodiments of the invention and, together with their description, serve to explain the invention and do not constitute an undue limitation thereof. In the drawings:

[0025] Figure 1 This is a hardware structure block diagram of a CVD device according to an embodiment of the present invention;

[0026] Figure 2 This is a flowchart of a calibration method for a CVD device according to an embodiment of the present invention;

[0027] Figure 3 This is a schematic diagram of the CVD equipment according to an embodiment of the present invention;

[0028] Figure 4 This is a structural block diagram of a CVD device according to an embodiment of the present invention. Detailed Implementation

[0029] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, and not all of them. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present application. It should be noted that, unless otherwise specified, the embodiments and features in the embodiments of the present application can be combined with each other.

[0030] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0031] Example 1

[0032] The method embodiment provided in Embodiment 1 of this application can be executed in a CVD device, industrial console, control device, or similar computing device. Taking its operation on a CVD device as an example, Figure 1This is a hardware structure block diagram of a CVD device according to an embodiment of the present invention. Figure 1 As shown, a CVD device may include one or more ( Figure 1 Only one is shown in the diagram. A processor 102 (which may include, but is not limited to, a microprocessor MCU or a programmable logic device FPGA, etc.) and a memory 104 for storing data are also shown. Optionally, the CVD equipment may further include a transmission device 106 for communication functions and an input / output device 108. Those skilled in the art will understand that... Figure 1 The structure shown is for illustrative purposes only and does not limit the structure of the CVD equipment described above. For example, the CVD equipment may also include components that are larger than... Figure 1 The more or fewer components shown, or having the same Figure 1 The different configurations shown.

[0033] The memory 104 can be used to store programs for operating the CVD equipment, such as application software programs and modules, like the monitoring program corresponding to a calibration method for a CVD equipment in this embodiment of the invention. The processor 102 executes various functional applications and data processing by running the monitoring program stored in the memory 104, thereby implementing the aforementioned method. The memory 104 may include high-speed random access memory and may also include non-volatile memory, such as one or more magnetic storage devices, flash memory, or other non-volatile solid-state memory. In some instances, the memory 104 may further include memory remotely located relative to the processor 102, and these remote memories can be connected to the CVD equipment via a network. Examples of such networks include, but are not limited to, the Internet, corporate intranets, local area networks, mobile communication networks, and combinations thereof.

[0034] The transmission device 106 is used to receive or send data via a network. Specific examples of the network described above may include a wireless network provided by the communication provider of the CVD equipment. In one example, the transmission device 106 includes a Network Interface Controller (NIC), which can connect to other network devices via a base station to communicate with the Internet. In another example, the transmission device 106 may be a Radio Frequency (RF) module used for wireless communication with the Internet.

[0035] This embodiment provides a calibration method for CVD equipment. Figure 2 This is a flowchart of a calibration method for a CVD device according to an embodiment of the present invention, such as... Figure 2 As shown, the process includes the following steps:

[0036] Step S202: Obtain the target capacitance value collected by the horizontal sensor on the chemical vapor deposition (CVD) equipment. The CVD equipment includes a slide stage and a spray head. The horizontal sensor is embedded in the slide stage and connected to a capacitor. The two plates of the capacitor are respectively set on the slide stage and the spray head.

[0037] In this embodiment, the spray head of the CVD equipment directs the gas used for deposition to the wafer surface, so it is necessary to keep the two parallel and within a certain distance. A level sensor is embedded in the wafer stage of the CVD equipment. The level sensor senses the levelness between the wafer and the spray head on the wafer stage in real time through a capacitor, confirming that the distance between the two is the distance required by the process and whether they are parallel.

[0038] In this embodiment, there can be one or more capacitors. If there are multiple capacitors, the different capacitors are installed at different mounting points on the wafer stage.

[0039] Step S204: Determine whether there is a positional deviation between the stage and the spray head based on the target capacitance value;

[0040] Optionally, positional deviations include height deviations and tilt deviations (levelness deviations).

[0041] Step S206: If there is a positional deviation between the stage and the spray head, the stage is calibrated according to the target capacitance value.

[0042] If there is a height deviation, the height of the stage needs to be calibrated. If there is a tilt deviation (level deviation), the tilt of the stage needs to be calibrated. If both exist, the height deviation can be adjusted first, and then the tilt deviation can be adjusted.

[0043] Through the above steps, the target capacitance value collected by the horizontal sensor on the chemical vapor deposition (CVD) equipment is obtained. The CVD equipment includes a stage and a spray head. The horizontal sensor is embedded in the stage and connected to a capacitor, whose two plates are respectively located on the stage and the spray head. The target capacitance value is used to determine if there is a positional deviation between the stage and the spray head. If a positional deviation exists, the stage is calibrated based on the target capacitance value. This allows for real-time detection of the distance between the stage and the spray head, as well as the tilt of the stage itself, enabling real-time adjustment of the stage height and tilt. This solves the technical problem of low efficiency in adjusting the position between the stage and the spray head in CVD equipment, improving accuracy compared to manual measurement, enhancing the quality of thin film deposition in mass production, ensuring deposition uniformity, and making it suitable for ultra-large-scale mass production.

[0044] In this embodiment, the positional deviation includes height deviation and tilt (levelness) deviation. In one embodiment of calibrating the height deviation, determining whether there is a positional deviation between the stage and the spray head based on the target capacitance value includes: determining the reference capacitance value of the CVD equipment, wherein the reference capacitance value corresponds to the height between the stage and the spray head required by the process of the CVD equipment; determining whether the difference between the target capacitance value and the reference capacitance value is less than a first threshold; if the difference between the target capacitance value and the reference capacitance value is less than the first threshold, determining that there is no height deviation between the stage and the spray head; if the difference between the target capacitance value and the reference capacitance value is greater than or equal to the first threshold, determining that there is a height deviation between the stage and the spray head, wherein the positional deviation includes the height deviation.

[0045] Optionally, the first threshold can be selected as 1% to 2% of the reference capacitance value.

[0046] In one implementation scenario, if there are multiple capacitors, before determining whether the difference between the target capacitance value and the reference capacitance value is less than a first threshold, the method further includes: determining the set of capacitance values ​​of multiple capacitors collected by the horizontal sensor; calculating the average capacitance value of the set of capacitance values; and determining the average capacitance value as the target capacitance value.

[0047] Figure 3 This is a schematic diagram of a CVD apparatus according to an embodiment of the present invention. Within the chamber of the CVD apparatus, there is a wafer stage and a spray head. The gas used for film deposition is directed from the spray head to the wafer on the wafer stage. A level sensor is embedded in the wafer stage. The spray head is located above the wafer stage. Three sensing nodes are embedded in the wafer stage, each corresponding to a capacitor (capacitors A, B, and C). Each capacitor corresponds to a mounting point. Each sensing node detects the capacitance value formed between its location and the spray head. All capacitance values ​​can also be displayed on the CVD apparatus's UI interface. On the CVD apparatus's UI interface, the left and right sides of each row display the capacitance value corresponding to the sensing node and the capacitance difference between two sensing nodes, respectively.

[0048] Based on the distance h between the stage and the spray head given in the process, a reference capacitance value is predetermined. This distance is the distance required by the process. The average capacitance value is obtained by averaging each capacitance value. The average capacitance value is compared with this reference capacitance value to determine whether the difference 1 is within a first threshold. If it is within the first threshold, the distance between the stage and the spray head does not need to be adjusted; if it exceeds the first threshold, the distance between the stage and the spray head needs to be adjusted.

[0049] In one embodiment of calibrating tilt deviation, there are multiple capacitors distributed at different mounting points on the substrate stage. Determining whether there is a positional deviation between the substrate stage and the spray head based on the target capacitance value includes: determining a set of capacitance values ​​of multiple capacitors collected by a level sensor; calculating the absolute value of the difference between every two capacitance values ​​in the set of capacitance values ​​to obtain a set of absolute values; determining whether there is a specified absolute value in the set of absolute values ​​that is greater than a second threshold; if there is a specified absolute value in the set of absolute values ​​that is greater than the second threshold, determining that there is a tilt deviation between the substrate stage and the spray head; if there is no specified absolute value in the set of absolute values ​​that is greater than the second threshold, determining that there is no tilt deviation between the substrate stage and the spray head, wherein the positional deviation includes the tilt deviation.

[0050] For all capacitors, compare the values ​​of every two capacitors to obtain multiple differences. For example, for capacitors A, B, and C, calculate the absolute values ​​of the differences between A and B, B and C, and A and C to obtain a set of absolute values. Taking the capacitance difference between capacitors A and B (whose positions are also referred to as A and B) as an example, the height relationship and vertical height difference between A and B can be determined based on this difference. Determine if the absolute value of each difference is less than a second threshold. If any difference is greater than the second threshold, the level of the stage needs to be adjusted; if the absolute value of each difference is less than the second threshold, the level of the stage does not need to be adjusted. This method is used to determine the level of the stage. Optionally, the second threshold can be 0.05μF or a capacitance value accurate to three decimal places, such as 0.001μF-0.009μF.

[0051] In one embodiment of calibrating height deviation, the position deviation includes the height deviation. If there is a position deviation between the wafer stage and the spray head, calibrating the position of the wafer stage according to the target capacitance value includes: if there is a height deviation between the wafer stage and the spray head, calculating a first difference between the target capacitance value and a reference capacitance value, wherein the reference capacitance value corresponds to the height between the wafer stage and the spray head required by the process of the CVD equipment; calculating the first plate height difference of the capacitor based on the first difference, wherein the plate height of the capacitor is negatively correlated with the capacitance value; and outputting first calibration information based on the first plate height difference, wherein the first calibration information is used to indicate that the wafer stage relative to the spray head is adjusted as a whole in the vertical direction to adjust the first plate height difference.

[0052] The capacitance value is calculated using the formula C = εS / 4πkd, where ε is the dielectric constant (a fixed quantity), S is the area of ​​the plates facing each other (a fixed quantity), k is the electrostatic force (a constant), and d is the plate height, which is negatively correlated with the capacitance value. For cases requiring adjustment, the overall height of the substrate stage is adjusted. The adjusted height is determined based on the first difference between the target capacitance value and the reference capacitance value. This adjustment can be automatic, such as by inputting the first plate height difference into the motor to control the motor to adjust the overall height of the substrate stage. Alternatively, the height can be manually adjusted using the screws at the bottom of the substrate stage, referencing the first plate height difference. This ensures that the actual distance between the substrate stage and the spray head is within the error range required by the process, h, and does not require adjustment.

[0053] In one embodiment of calibrating tilt deviation, if there is a positional deviation between the stage and the spray head, calibrating the position of the stage according to the target capacitance value includes:

[0054] S11, If ​​there is a tilt deviation between the tray stage and the spray head, calculate the second difference between the specified absolute value and the second threshold, and locate the installation point of the capacitor corresponding to the specified absolute value on the tray stage;

[0055] Optionally, before calculating the second difference between the specified absolute value and the second threshold, the method further includes: selecting the largest absolute value from the set of absolute values; and determining the largest absolute value as the specified absolute value.

[0056] In one example, if a specified absolute value with a difference greater than the second threshold appears in the set of absolute values ​​of capacitors A and B, B and C, and A and C (there may be one or more such values), then the combination with the largest absolute value of the difference can be selected, such as capacitors B and C. By adjusting the height of the mounting points of capacitors B and / or C, the overall tilt of the wafer stage can be adjusted. Since the wafer stage is a whole, adjusting the height of capacitor B will synchronously change the height of other capacitors (A and C). For example, if the mounting points of capacitors B and A are on opposite sides of the wafer stage, if the height of capacitor B is increased, the height of capacitor A will also decrease accordingly, achieving coordinated adjustment.

[0057] S12, calculate the height difference of the second plate of the capacitor based on the second difference, wherein the plate height of the capacitor is negatively correlated with the capacitance value;

[0058] Optionally, when calculating the height difference of the second plate of the capacitor, if the absolute value of the capacitance difference between capacitor B and capacitor A has the largest difference with respect to the second threshold, the first capacitance value (capacitance value of capacitor B) and the second capacitance value (capacitance value of capacitor A) corresponding to the second difference are determined. The third difference between the first capacitance value and the second capacitance value is calculated, and half of the third difference is taken to obtain the fourth difference. The fourth difference is converted into the capacitor plate height to obtain the second plate height difference. Then, the mounting point of the higher capacitor among the two capacitors can be adjusted to lower the second plate height difference, or the mounting point of the lower capacitor among the two capacitors can be adjusted to raise the second plate height difference.

[0059] S13, output second calibration information based on the height difference of the second electrode plate, wherein the second calibration information is used to indicate the adjustment of the height difference of the second electrode plate relative to the spray head in the vertical direction of the mounting point of the slide stage.

[0060] If the stage level needs adjustment, adjust the height of one or more positions on the stage based on their relative elevations and vertical height differences. Adjustments can also be made automatically via the application or manually.

[0061] By first adjusting the height of the slide stage to achieve coarse adjustment, and then adjusting the tilt to achieve fine adjustment, the distance between the slide stage and the spray head will not deviate from h after fine adjustment.

[0062] The solution in this embodiment embeds a level sensor in the wafer stage of the CVD equipment. The level sensor detects multiple capacitance values ​​and compares these values ​​with first and second thresholds to determine in real time whether the distance between the wafer stage and the spray head meets process requirements, as well as the wafer tilt angle, and makes adaptive adjustments, including adjusting the overall wafer stage height and / or tilt angle. This allows for real-time detection of the distance between the wafer stage and the spray head, as well as the wafer stage's tilt angle, enabling real-time adjustment of the stage height and tilt. This improves the film deposition quality in mass production, ensures deposition uniformity, and is suitable for ultra-large-scale production.

[0063] Through the above description of the embodiments, those skilled in the art can clearly understand that the methods according to the above embodiments can be implemented by means of software plus necessary general mechanical equipment, and of course, they can also be implemented by hardware, but in many cases the former is a better implementation method. Based on this understanding, the technical solution of the present invention, in essence, or the part that contributes to the related technology, can be embodied in the form of software controlling mechanical equipment. This software is stored in a storage medium (such as ROM / RAM, magnetic disk, optical disk) and includes several instructions to cause a mechanical device (CVD equipment, etc.) to execute the methods described in the various embodiments of the present invention.

[0064] Example 2

[0065] This embodiment also provides a CVD device for implementing the above embodiments and preferred embodiments; details already described will not be repeated. As used below, the term "module" can refer to a combination of software and / or hardware that performs a predetermined function. Although the apparatus described in the following embodiments is preferably implemented in software, hardware implementation, or a combination of software and hardware, is also possible and contemplated.

[0066] Figure 4 This is a structural block diagram of a CVD device according to an embodiment of the present invention, such as... Figure 4 As shown, the device includes: an acquisition module 40, a judgment module 42, and a calibration module 44, wherein,

[0067] The acquisition module 40 is used to acquire the target capacitance value collected by the horizontal sensor on the chemical vapor deposition (CVD) equipment. The CVD equipment includes a slide stage and a spray head. The horizontal sensor is embedded in the slide stage and connected to a capacitor. The two plates of the capacitor are respectively disposed on the slide stage and the spray head.

[0068] The judgment module 42 is used to determine whether there is a positional deviation between the substrate stage and the spray head based on the target capacitance value;

[0069] The calibration module 44 is used to calibrate the position of the slide stage according to the target capacitance value if there is a positional deviation between the slide stage and the spray head.

[0070] Optionally, the determination module includes: a first determining unit, configured to determine a reference capacitance value of the CVD equipment, wherein the reference capacitance value corresponds to the height between the wafer stage and the spray head as required by the process of the CVD equipment; a first determining unit, configured to determine whether the difference between the target capacitance value and the reference capacitance value is less than a first threshold; and a second determining unit, configured to determine that there is no height deviation between the wafer stage and the spray head if the difference between the target capacitance value and the reference capacitance value is less than the first threshold; and to determine that there is a height deviation between the wafer stage and the spray head if the difference between the target capacitance value and the reference capacitance value is greater than or equal to the first threshold, wherein the positional deviation includes the height deviation.

[0071] Optionally, if there are multiple capacitors, the judgment module further includes: a third determining unit, used to determine the set of capacitance values ​​of multiple capacitors collected by the horizontal sensor before the first determining unit determines whether the difference between the target capacitance value and the reference capacitance value is less than a first threshold; a first calculation unit, used to calculate the average capacitance value of the set of capacitance values; and a fourth determining unit, used to determine the average capacitance value as the target capacitance value.

[0072] Optionally, the number of capacitors is multiple, and the multiple capacitors are distributed at different mounting points on the substrate stage. The judgment module includes: a fifth determining unit, used to determine the set of capacitance values ​​of the multiple capacitors collected by the horizontal sensor; a second calculation unit, used to calculate the absolute value of the difference between every two capacitance values ​​in the set of capacitance values ​​to obtain a set of absolute values; a second judging unit, used to judge whether there is a specified absolute value in the set of absolute values ​​that is greater than a second threshold; a sixth determining unit, used to determine that there is a tilt deviation between the substrate stage and the spray head if there is a specified absolute value greater than the second threshold in the set of absolute values; and to determine that there is no tilt deviation between the substrate stage and the spray head if there is no specified absolute value greater than the second threshold in the set of absolute values, wherein the positional deviation includes the tilt deviation.

[0073] Optionally, the positional deviation includes the height deviation, and the calibration module includes: a first calculation unit, configured to calculate a first difference between the target capacitance value and the reference capacitance value if there is a height deviation between the wafer stage and the spray head, wherein the reference capacitance value corresponds to the height between the wafer stage and the spray head required by the process of the CVD equipment; a second calculation unit, configured to calculate the first plate height difference of the capacitor based on the first difference, wherein the plate height of the capacitor is negatively correlated with the capacitance value; and a first control unit, configured to output first calibration information based on the first plate height difference, wherein the first calibration information is used to instruct the wafer stage to be adjusted relative to the spray head in the vertical direction to adjust the first plate height difference.

[0074] Optionally, the calibration module includes: a third calculation unit, configured to calculate a second difference between a specified absolute value and a second threshold if there is a tilt deviation between the stage and the spray head, and locate the mounting point of the capacitor corresponding to the specified absolute value on the stage; a fourth calculation unit, configured to calculate the second plate height difference of the capacitor based on the second difference, wherein the plate height of the capacitor is negatively correlated with the capacitance value; and a second control unit, configured to output second calibration information based on the second plate height difference, wherein the second calibration information is used to instruct the mounting point of the stage relative to the spray head in the vertical direction to adjust the second plate height difference.

[0075] Optionally, the calibration module further includes: a fifth calculation unit, configured to select the largest absolute value from the set of absolute values ​​before the third calculation unit calculates the second difference between the specified absolute value and the second threshold; and a determination unit, configured to determine the largest absolute value as the specified absolute value.

[0076] It should be noted that the above modules can be implemented by software or hardware. For the latter, they can be implemented in the following ways, but are not limited to: all the above modules are located in the same processor; or, the above modules are located in different processors in any combination.

[0077] Example 3

[0078] Embodiments of the present invention also provide a storage medium storing a computer program, wherein the computer program is configured to execute the steps in any of the above method embodiments when running.

[0079] Optionally, in this embodiment, the storage medium may be configured to store a computer program for performing the following steps:

[0080] S1, acquire the target capacitance value collected by the horizontal sensor on the chemical vapor deposition (CVD) equipment, wherein the CVD equipment includes a wafer stage and a spray head, the horizontal sensor is embedded in the wafer stage, the horizontal sensor is connected to a capacitor, and the two plates of the capacitor are respectively disposed on the wafer stage and the spray head.

[0081] S2, determine whether there is a positional deviation between the stage and the spray head based on the target capacitance value;

[0082] S3, if there is a positional deviation between the slide stage and the spray head, the position of the slide stage is calibrated according to the target capacitance value.

[0083] Optionally, in this embodiment, the storage medium may include, but is not limited to, various media capable of storing computer programs, such as USB flash drives, read-only memory (ROM), random access memory (RAM), portable hard drives, magnetic disks, or optical disks.

[0084] Embodiments of the present invention also provide an electronic device, including a memory and a processor, wherein the memory stores a computer program and the processor is configured to run the computer program to perform the steps in any of the above method embodiments.

[0085] Optionally, the electronic device may further include a transmission device and an input / output device, wherein the transmission device is connected to the processor and the input / output device is connected to the processor.

[0086] Optionally, in this embodiment, the processor can be configured to perform the following steps via a computer program:

[0087] S1, acquire the target capacitance value collected by the horizontal sensor on the chemical vapor deposition (CVD) equipment, wherein the CVD equipment includes a wafer stage and a spray head, the horizontal sensor is embedded in the wafer stage, the horizontal sensor is connected to a capacitor, and the two plates of the capacitor are respectively disposed on the wafer stage and the spray head.

[0088] S2, determine whether there is a positional deviation between the stage and the spray head based on the target capacitance value;

[0089] S3, if there is a positional deviation between the slide stage and the spray head, the position of the slide stage is calibrated according to the target capacitance value.

[0090] Optionally, specific examples in this embodiment can refer to the examples described in the above embodiments and optional implementations, and will not be repeated here.

[0091] The sequence numbers of the embodiments in this application are for descriptive purposes only and do not represent the superiority or inferiority of the embodiments.

[0092] In the above embodiments of this application, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0093] In the several embodiments provided in this application, it should be understood that the disclosed technical content can be implemented in other ways. The device embodiments described above are merely illustrative; for example, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the displayed or discussed mutual coupling, direct coupling, or communication connection may be through some interfaces; the indirect coupling or communication connection between units or modules may be electrical or other forms.

[0094] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0095] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0096] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to related technologies, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, read-only memory (ROM), random access memory (RAM), portable hard drives, magnetic disks, or optical disks.

[0097] The above description is only a preferred embodiment of this application. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of this application, and these improvements and modifications should also be considered within the scope of protection of this application.

Claims

1. A calibration method for a CVD device, characterized in that, include: The target capacitance value collected by the horizontal sensor on the chemical vapor deposition (CVD) equipment is obtained. The CVD equipment includes a slide stage and a spray head. The horizontal sensor is embedded on the slide stage and connected to a capacitor. The two plates of the capacitor are respectively disposed on the slide stage and the spray head. There are multiple capacitors, which are distributed at different mounting points on the slide stage. Based on the target capacitance value, it is determined whether there is a positional deviation between the stage and the spray head, the positional deviation including tilt deviation and height deviation; specifically including: A set of capacitance values ​​of multiple capacitors collected by the horizontal sensor is determined; the absolute value of the difference between every two capacitance values ​​in the set of capacitance values ​​is calculated to obtain a set of absolute values; the maximum absolute value is selected from the set of absolute values; the maximum absolute value is determined as a specified absolute value; it is determined whether there is a specified absolute value in the set of absolute values ​​that is greater than a second threshold; if there is a specified absolute value in the set of absolute values ​​that is greater than the second threshold, it is determined that there is a tilt deviation between the stage and the spray head. If there is a positional deviation between the slide stage and the spray head, the slide stage is calibrated according to the target capacitance value. First, the height of the slide stage is adjusted, and then the tilt of the slide stage is adjusted. Specifically, this includes: If the height deviation exists between the wafer stage and the spray head, calculate a first difference between the target capacitance value and the reference capacitance value, wherein the reference capacitance value corresponds to the height between the wafer stage and the spray head required by the process of the CVD equipment; calculate the first plate height difference of the capacitor based on the first difference, wherein the plate height of the capacitor is negatively correlated with the capacitance value; output first calibration information based on the first plate height difference, wherein the first calibration information is used to indicate that the wafer stage relative to the spray head should be adjusted as a whole in the vertical direction to adjust the first plate height difference; If there is a tilt deviation between the wafer stage and the spray head, calculate a second difference between the specified absolute value and the second threshold, and locate the mounting point of the capacitor corresponding to the specified absolute value on the wafer stage; calculate the second plate height difference of the capacitor based on the second difference, wherein the plate height difference of the capacitor is negatively correlated with the capacitance value; output second calibration information based on the second plate height difference, wherein the second calibration information is used to indicate that the mounting point of the wafer stage relative to the spray head should be adjusted in the vertical direction to adjust the second plate height difference; The calculation of the second plate height difference of the capacitor based on the second difference includes: determining the first capacitance value and the second capacitance value corresponding to the two capacitors in the second difference; calculating the third difference between the first capacitance value and the second capacitance value; taking half of the third difference to obtain the fourth difference; and converting the fourth difference into the capacitor plate height to obtain the second plate height difference.

2. The method according to claim 1, characterized in that, Determining whether there is a positional deviation between the stage and the spray head based on the target capacitance value includes: Determine the reference capacitance value of the CVD equipment, wherein the reference capacitance value corresponds to the height between the slide stage and the spray head as required by the process of the CVD equipment; Determine whether the difference between the target capacitance value and the reference capacitance value is less than a first threshold. If the difference between the target capacitance value and the reference capacitance value is less than a first threshold, it is determined that there is no height deviation between the substrate stage and the spray head; if the difference between the target capacitance value and the reference capacitance value is greater than or equal to the first threshold, it is determined that there is a height deviation between the substrate stage and the spray head, wherein the positional deviation includes the height deviation.

3. The method according to claim 2, characterized in that, If there are multiple capacitors, before determining whether the difference between the target capacitance value and the reference capacitance value is less than a first threshold, the method further includes: Determine the set of capacitance values ​​of multiple capacitors collected by the horizontal sensor; Calculate the average capacitance value of the set of capacitance values; The average capacitance value is determined as the target capacitance value.

4. A CVD device, characterized in that, include: The acquisition module is used to acquire the target capacitance value collected by the horizontal sensor on the chemical vapor deposition (CVD) equipment. The CVD equipment includes a slide stage and a spray head. The horizontal sensor is embedded in the slide stage and connected to a capacitor. The two plates of the capacitor are respectively disposed on the slide stage and the spray head. There are multiple capacitors, which are distributed at different mounting points on the slide stage. The judgment module is used to determine whether there is a positional deviation between the slide stage and the spray head based on the target capacitance value. The positional deviation includes tilt deviation and height deviation. The calibration module is used to calibrate the position of the slide stage according to the target capacitance value if there is a positional deviation between the slide stage and the spray head. First, the height of the slide stage is adjusted, and then the tilt of the slide stage is adjusted. The judgment module is further configured to: determine a set of capacitance values ​​of multiple capacitors collected by the horizontal sensor; calculate the absolute value of the difference between every two capacitance values ​​in the set of capacitance values ​​to obtain a set of absolute values; select the maximum absolute value in the set of absolute values; determine the maximum absolute value as a specified absolute value; determine whether there is a specified absolute value in the set of absolute values ​​that is greater than a second threshold; if there is a specified absolute value in the set of absolute values ​​that is greater than the second threshold, determine that there is a tilt deviation between the stage and the spray head. The calibration module is further configured to: first adjust the height of the slide stage, then adjust the tilt of the slide stage; if there is a height deviation between the slide stage and the spray head, calculate a first difference between the target capacitance value and the reference capacitance value, wherein the reference capacitance value corresponds to the height between the slide stage and the spray head required by the process of the CVD equipment; calculate the first plate height difference of the capacitor based on the first difference, wherein the plate height of the capacitor is negatively correlated with the capacitance value; output first calibration information based on the first plate height difference, wherein the first calibration information is used to indicate that the slide stage relative to the spray head should be adjusted vertically to adjust the first plate height difference; if there is a tilt deviation between the slide stage and the spray head, calculate the ratio of the specified absolute value to the second threshold value. The second difference between the two capacitors is used to locate the mounting point of the capacitor corresponding to the specified absolute value on the wafer stage; the second plate height difference of the capacitor is calculated based on the second difference, wherein the plate height difference of the capacitor is negatively correlated with the capacitance value; second calibration information is output based on the second plate height difference, wherein the second calibration information is used to indicate that the mounting point of the wafer stage is adjusted relative to the spray head in the vertical direction to adjust the second plate height difference; wherein, calculating the second plate height difference of the capacitor based on the second difference includes: determining the first capacitance value and the second capacitance value corresponding to the two capacitors in the second difference, calculating the third difference between the first capacitance value and the second capacitance value, taking half of the third difference to obtain a fourth difference, converting the fourth difference into the capacitor plate height to obtain the second plate height difference.

5. A storage medium, characterized in that, The storage medium includes a stored program, wherein the program, when executed, performs the method steps of any one of claims 1 to 3.

6. An electronic device comprising a processor, a communication interface, a memory, and a communication bus, wherein, The processor, communication interface, and memory communicate with each other via a communication bus; among which: Memory, used to store computer programs; A processor for executing the method steps of any one of claims 1 to 3 by running a program stored in memory.

Images