Sensor package structure

Abstract

A sensor package structure includes a substrate, a sensing chip mounted on the substrate, a support layer in a ring shape and disposed on a top surface of the sensing chip, a light-transmissive layer disposed on the support layer, and a trench-type shielding layer in a ring shape and disposed on a lower surface of the light-transmissive layer. The trench-type shielding layer includes an inner barrier wall and an outer barrier wall located on opposite sides of the support layer. An inner edge of the inner barrier wall is formed with an opening located directly above a sensing region of the sensing chip. The inner barrier wall, the outer barrier wall, and a portion of the lower surface of the light-transmissive layer collectively enclose a ring-shaped flow-blocking groove. The light-transmissive layer is disposed on the support layer with the portion of the lower surface such that a portion of the support layer is located within the ring-shaped flow-blocking groove. Accordingly, the trench-type shielding layer can prevent the support layer from being excessively deformed or displaced outward, thereby avoiding peeling of the light-transmissive layer.

Description

Technical Field

[0001] This application relates to a sensor packaging structure, and more particularly to a sensor packaging structure having a grooved shielding layer. Background Technology

[0002] Existing sensor packaging structures involve attaching a glass plate to a sensing chip via an adhesive layer, with the adhesive layer surrounding the sensing area of ​​the chip. However, since some light passing through the glass plate may be reflected by the adhesive layer, this can affect the sensing area of ​​the sensing chip (e.g., glare). Furthermore, during the curing process of the adhesive layer in existing sensor packaging structures, air inside the adhesive layer is easily heated and pushed against it, causing it to deform or shift outwards.

[0003] Therefore, the applicant believed that the above-mentioned defects could be improved, and thus devoted himself to research and applied scientific principles, and finally proposed this application with a reasonable design that effectively improves the above-mentioned defects. Summary of the Invention

[0004] This application aims to provide a sensor packaging structure that can effectively improve the defects that may arise from existing sensor packaging structures.

[0005] This application discloses a sensor packaging structure, comprising: a substrate; a sensing chip disposed on the substrate along a predetermined direction and electrically coupled to the substrate; wherein a sensing region and a support region surrounding the sensing region are included on one top surface of the sensing chip; a support layer, annular in shape and disposed on the support region of the sensing chip; a light-transmitting layer having a lower surface and an upper surface located on opposite sides, and the light-transmitting layer being located above the sensing chip via the support layer; wherein the sensing region faces the light-transmitting layer; and a trench-type shielding layer, annular in shape and disposed on the lower surface of the light-transmitting layer, for use in... The trench-type shielding layer blocks visible light from passing through. It comprises: an inner barrier wall located inside the support layer; an outer barrier wall located outside the support layer; and a connecting section connecting the inner and outer barrier walls to collectively enclose and form an annular flow-blocking groove. The trench-type shielding layer is disposed on the support layer via the connecting section, such that a portion of the support layer is located within the annular flow-blocking groove. An opening is formed on the inner edge of the inner barrier wall directly above the sensing area. The trench-type shielding layer, the light-transmitting layer, the support layer, and the sensing chip collectively enclose and form a closed space, with the inner barrier wall located within this closed space.

[0006] Optionally, the support layer has a support thickness in a predetermined direction, and the inner barrier wall has a thickness in a predetermined direction, which is between 10% and 30% of the support thickness.

[0007] Optionally, the support layer has a support thickness in a preset direction, and the outer barrier wall has a thickness in a preset direction, which is between 10% and 30% of the support thickness.

[0008] Optionally, the inner barrier wall has a thickness in a predetermined direction, which is 50% to 300% of the thickness of the outer barrier wall in the predetermined direction.

[0009] Optionally, the connecting section has a thickness in a predetermined direction, which is 10% to 80% of the thickness of the inner barrier wall.

[0010] Optionally, the support layer has an inner arc surface and an outer arc surface, and the radius of curvature of the inner arc surface is smaller than the radius of curvature of the outer arc surface.

[0011] Optionally, the contact area between the support layer and the inner barrier wall is smaller than the contact area between the support layer and the outer inner barrier wall.

[0012] Optionally, the trench-type shielding layer includes an extension connected to the outer barrier wall, and the edge of the extension is flush with the circumferential side of the light-transmitting layer.

[0013] Alternatively, the edge of the outer barrier wall is cut flush with the circumferential side of the light-transmitting layer.

[0014] Optionally, at least one of the inner barrier wall and the outer barrier wall is truncated cone-shaped and tapers towards the sensing chip along a preset direction.

[0015] This application also discloses a sensor packaging structure, comprising: a substrate; a sensing chip disposed on the substrate along a predetermined direction and electrically coupled to the substrate; wherein a top portion of the sensing chip includes a sensing region and a support region surrounding the sensing region; a support layer, annular in shape and disposed on the support region of the sensing chip; a light-transmitting layer having a lower surface and an upper surface located on opposite sides, and the light-transmitting layer being located above the sensing chip via the support layer; wherein the sensing region faces the light-transmitting layer; and a trench-type shielding layer, annular in shape and disposed on the lower surface of the light-transmitting layer, for... To block visible light from passing through; wherein, the trench-type shielding layer includes: an inner barrier wall located inside the support layer; and an outer barrier wall located outside the support layer; wherein, the inner barrier wall, the outer barrier wall, and a portion of the lower surface of the light-transmitting layer together surround and form an annular flow-blocking groove; wherein, a portion of the lower surface of the light-transmitting layer is disposed on the support layer so that a portion of the support layer is located within the annular flow-blocking groove; wherein, the inner edge of the inner barrier wall forms an opening located directly above the sensing area; the light-transmitting layer, the support layer, and the sensing chip together surround and form a closed space, and the inner barrier wall is located within the closed space.

[0016] Optionally, the support layer has a support thickness in a preset direction, and the inner barrier wall has a thickness in a preset direction, which is between 30% and 50% of the support thickness.

[0017] Optionally, the support layer has a support thickness in a preset direction, and the outer barrier wall has a thickness in a preset direction, which is between 30% and 50% of the support thickness.

[0018] Optionally, the inner barrier wall has a thickness in a predetermined direction, which is 50% to 300% of the thickness of the outer barrier wall in the predetermined direction.

[0019] Optionally, the support layer has an inner arc surface and an outer arc surface, and the radius of curvature of the inner arc surface is smaller than the radius of curvature of the outer arc surface.

[0020] Optionally, the contact area between the support layer and the inner barrier wall is smaller than the contact area between the support layer and the outer inner barrier wall.

[0021] Optionally, the trench-type shielding layer includes an extension connected to the outer barrier wall, and the edge of the extension is flush with the circumferential side of the light-transmitting layer.

[0022] Alternatively, the edge of the outer barrier wall is cut flush with the circumferential side of the light-transmitting layer.

[0023] Optionally, at least one of the inner barrier wall and the outer barrier wall is truncated cone-shaped and tapers towards the sensing chip along a preset direction.

[0024] Optionally, the sensor packaging structure includes a package formed on a substrate, and a sensing chip, a support layer, a light-transmitting layer, and a trench shielding layer are embedded in the package, while at least a portion of the upper surface of the light-transmitting layer is exposed outside the package; wherein, a portion of the annular choke groove located between the support layer and the outer barrier wall is filled with the package.

[0025] In summary, the sensor packaging structure disclosed in this application, through the structural combination of the support layer and the trench-type shielding layer, can simultaneously achieve (or realize) multiple technical effects (such as: while the trench-type shielding layer blocks visible light to reduce glare caused by reflection from the support layer, the trench-type shielding layer can also effectively prevent the support layer from excessively deforming or displacing outward, thereby avoiding peeling of the light-transmitting layer).

[0026] To further understand the features and technical content of this application, please refer to the following detailed description and drawings of this application. However, these descriptions and drawings are only used to illustrate this application and are not intended to limit the scope of protection of this application in any way. Attached Figure Description

[0027] Figure 1 This is a three-dimensional schematic diagram of the sensor packaging structure according to Embodiment 1 of this application.

[0028] Figure 2 for Figure 1 A schematic cross-sectional view along section line II-II.

[0029] Figure 3 for Figure 2 An enlarged schematic diagram of region III.

[0030] Figure 4 for Figure 3 A schematic diagram of another state.

[0031] Figure 5 This is a three-dimensional schematic diagram of the sensor packaging structure according to Embodiment 2 of this application.

[0032] Figure 6 for Figure 5 A cross-sectional view along section line VI-VI.

[0033] Figure 7 for Figure 6 An enlarged schematic diagram of region VII.

[0034] Figure 8 for Figure 7 A schematic diagram of another state. Detailed Implementation

[0035] The following specific embodiments illustrate the implementation of the "sensor packaging structure" disclosed in this application. Those skilled in the art can understand the advantages and effects of this application from the content disclosed in this specification. This application can be implemented or applied through other different specific embodiments, and the details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of this application. Furthermore, the accompanying drawings are for simple illustration only and are not depictions of actual dimensions, as stated in advance. The following embodiments will further describe the relevant technical content of this application in detail, but the disclosed content is not intended to limit the scope of protection of this application.

[0036] It should be understood that while terms such as "first," "second," and "third" may be used in this document to describe various components or signals, these components or signals should not be limited by these terms. These terms are primarily used to distinguish one component from another, or one signal from another. Furthermore, the term "or" as used herein should, as appropriate, include any combination of one or more of the related listed items.

[0037] Please refer to Example 1 Figures 1 to 4 As shown, this is an embodiment of this application. Figure 1As shown, this embodiment discloses a sensor packaging structure 100; that is, the internal structure is not any structure for packaging a sensor, and its structural design basis is different from the sensor packaging structure 100 referred to in this embodiment, so the two are not suitable for comparison.

[0038] like Figure 2 and Figure 3 As shown, the sensor packaging structure 100 includes a substrate 1, a sensing chip 2 disposed on the substrate 1 along a preset direction D, multiple metal lines 3 electrically coupled to the sensing chip 2 and the substrate 1, a support layer 4 disposed on the sensing chip 2, a light-transmitting layer 5 located above the sensing chip 2 through the support layer 4, a trench-type shielding layer 6 disposed on the light-transmitting layer 5, and a package 7 formed on the substrate 1.

[0039] In this embodiment, the sensor packaging structure 100 is described as including the aforementioned components, but it can be adjusted and varied according to design requirements. For example, in other embodiments not shown in this application, the sensor packaging structure 100 may omit multiple metal lines 3, and the sensing chip 2 may be fixed and electrically coupled to the substrate 1 via a flip-chip method; alternatively, the sensor packaging structure 100 may omit or replace the package body 7 with other structures. The structure and connection relationship of each component of the sensor packaging structure 100 in this embodiment will be described below.

[0040] In this embodiment, the substrate 1 is square or rectangular, but this application is not limited to this. The substrate 1 has a chip fixing area 111 approximately at the center of its upper surface 11, and a plurality of bonding pads 112 are formed on its upper surface outside the chip fixing area 111 (or the sensing chip 2). In this embodiment, the plurality of bonding pads 112 are generally arranged in a ring, but this application is not limited to this. For example, in other embodiments not shown in this application, the plurality of bonding pads 112 may also be arranged in two rows on opposite sides of the chip fixing area 111.

[0041] In addition, in this embodiment, the substrate 1 may also have a plurality of solder balls 8 on its lower plate surface 12, and the sensor packaging structure 100 can be soldered and fixed to an electronic component (not shown in the figure) by the plurality of solder balls 8, so that the sensor packaging structure 100 can be electrically connected to the electronic component.

[0042] In this embodiment, the sensing chip 2 is described as an image sensing chip, but is not limited thereto. The sensing chip 2 is fixed to the chip fixing area 111 of the substrate 1; that is, the sensing chip 2 is located inside the plurality of bonding pads 112. Furthermore, a top surface 21 of the sensing chip 2 includes a sensing area 211 and a support area 212 surrounding the sensing area 211 (in a ring shape), and the sensing chip 2 includes a plurality of connecting pads 213 located in the support area 212.

[0043] In this embodiment, the number and position of the plurality of connection pads 213 of the sensing chip 2 correspond to the number and position of the plurality of bonding pads 112 of the substrate 1, respectively. Furthermore, one end of each of the plurality of metal wires 3 is connected to one of the plurality of bonding pads 112, and the other end of each of the plurality of metal wires 3 is connected to one of the plurality of connection pads 213, thereby enabling the substrate 1 to be electrically coupled to the sensing chip 2 via the plurality of metal wires 3.

[0044] The support layer 4 is annular and disposed on the bearing area 212 of the sensing chip 2, and each connecting pad 213 can be selectively embedded within the support layer 4 or located on the outside of the support layer 4 according to design requirements. For example, Figure 2 As shown on the left, at least one of the connecting pads 213 and the metal wire 3 connected to it are located outside the support layer 4; or, as shown on the left. Figure 2 As shown on the right, at least one of the connecting pads 213 and a portion of the metal wire 3 connected to it are embedded in the support layer 4.

[0045] In this embodiment, the light-transmitting layer 5 is described as a transparent flat glass plate, but this application is not limited to this. In this embodiment, the light-transmitting layer 5 includes an upper surface 51, a lower surface 52 located opposite to the upper surface 51, and a ring-shaped side surface 53 connecting the upper surface 51 and the lower surface 52. The light-transmitting layer 5 is disposed above the sensing chip 2 via the support layer 4, and the lower surface 52 faces the sensing area 211.

[0046] The grooved shielding layer 6 is annular and disposed on the lower surface 52 of the light-transmitting layer 5 to block visible light from passing through. In this embodiment, the grooved shielding layer 6 may allow infrared light with wavelengths above 780 nanometers (nm) to pass through while blocking visible light with wavelengths between 365 nm and 780 nm, but this application is not limited thereto.

[0047] More specifically, in this embodiment, the grooved shielding layer 6 includes an annular connecting segment 61, an annular inner barrier wall 62 extending inward from the connecting segment 61, and an annular outer barrier wall 63 extending outward from the connecting segment 61. That is, the connecting segment 61 connects the inner barrier wall 62 and the outer barrier wall 63 to jointly surround and form an annular flow-blocking groove S.

[0048] The grooved shielding layer 6 is disposed on the support layer 4 with the connecting section 61, such that a portion of the support layer 4 is located within the annular flow-blocking groove S; that is, the connecting section 61 is sandwiched between the light-transmitting layer 5 and the support layer 4. Accordingly, the grooved shielding layer 6, the light-transmitting layer 5, the support layer 4, and the sensing chip 2 together form a closed space E.

[0049] Furthermore, the inner barrier wall 62 is located inside the support layer 4 (that is, the inner barrier wall 62 is located within the enclosed space E), and the inner edge of the inner barrier wall 62 forms an opening O directly above the sensing area 211. The outer barrier wall 63 is located outside the support layer 4, and the edge of the outer barrier wall 63 may be at least partially flush with the annular side surface 53 of the light-transmitting layer 5. In addition, the grooved shielding layer 6 may also include an extension 64 connected to the outer barrier wall 63, and the edge of the extension 64 is flush with the annular side surface 53 of the light-transmitting layer 5.

[0050] It should be noted that, in order to enable the grooved shielding layer 6 to have a better anti-glare effect and at the same time effectively prevent the air in the enclosed space E from being heated and expanding and pushing the support layer 4, causing it to deform or shift excessively to the outside, the connecting section 61, the inner barrier wall 62, and the outer barrier wall 63 preferably have at least some of the following technical features, but this application is not limited thereto.

[0051] At least one of the inner barrier wall 62 and the outer barrier wall 63 is truncated cone-shaped and tapers towards the sensing chip 2 along the preset direction D, but this application is not limited thereto. Further, in the preset direction D, the thickness T61 of the connecting segment 61 is 10% to 80% of the thickness T62 of the inner barrier wall 62 and is approximately equal to the thickness T64 of the extension segment 64, while the thickness T62 of the inner barrier wall 62 is 50% to 300% of the thickness T63 of the outer barrier wall 63, but the above thicknesses can be adjusted according to design requirements.

[0052] In other words, the support layer 4 has a support thickness T4 in the preset direction D, and the thickness T62 of the inner barrier wall 62 is preferably between 10% and 30% of the support thickness T4, while the thickness T63 of the outer barrier wall 63 is also between 10% and 30% of the support thickness T4.

[0053] Furthermore, such as Figure 4 As shown, when the support layer 4 has undergone excessive deformation or displacement outward, the outer barrier wall 63 will block the outward displacement of the support layer 4, thereby limiting the magnitude of its displacement. Therefore, the contact area between the support layer 4 and the inner barrier wall 62 will be smaller than the contact area between the support layer 4 and the outer and inner barrier walls 62. Furthermore, the support layer 4 forms an inner arc surface 41 and an outer arc surface 42, and the radius of curvature of the inner arc surface 41 is smaller than the radius of curvature of the outer arc surface 42. The center of curvature of the inner arc surface 41 may fall approximately within the enclosed space E, while the center of curvature of the outer arc surface 42 is located outside the sensor packaging structure 100.

[0054] like Figure 2 and Figure 3 As shown, the package 7 is formed on the upper surface 11 of the substrate 1, and its edges are flush with the edges of the substrate 1. The sensing chip 2, the support layer 4, the light-transmitting layer 5, and at least a portion of each metal line 3 are embedded within the package 7, and at least a portion of the upper surface 51 of the light-transmitting layer 5 (e.g., the portion of the upper surface 51 corresponding to the opening O) is exposed outside the package 7.

[0055] Furthermore, the encapsulation body 7 is connected to a portion of the trench-type shielding layer 6; that is, the outer barrier wall 63 of the trench-type shielding layer 6 is embedded within the encapsulation body 7. Additionally, a portion of the annular flow-blocking groove S located between the support layer 4 and the outer barrier wall 63 is filled with the encapsulation body 7 to enhance their bonding.

[0056] Furthermore, the package 7 in this embodiment is described as a liquid compound, but this application is not limited thereto. For example, in other embodiments not illustrated in this application, a molding compound may be further formed on the top surface of the liquid compound of the package 7; or, the package 7 may simply be a molding compound formed on the substrate 1.

[0057] Please refer to Example 2 Figures 5 to 8As shown, this is Embodiment 2 of this application. Since this embodiment is similar to Embodiment 1 above, the similarities between the two embodiments will not be repeated (such as: the substrate 1, the sensing chip 2, the multiple metal lines 3, the support layer 4, the light-transmitting layer 5, and the package 7). The main difference between this embodiment and Embodiment 1 above is the structure of the trench shielding layer 6 and the corresponding component connection relationship.

[0058] In this embodiment, as Figures 5 to 7 As shown, the trench-type shielding layer 6 does not have the connecting segment 61 described in Embodiment 1 (e.g., Figure 2 Therefore, the inner barrier wall 62 and the outer barrier wall 63 are part of the lower surface 52 of the light-transmitting layer 5, and together they surround and form the annular flow-blocking groove S. The light-transmitting layer 5 is partially disposed on the support layer 4 (that is, the support layer 4 is sandwiched between the light-transmitting layer 5 and the sensing chip 2), so that a portion of the support layer 4 is located within the annular flow-blocking groove S. Furthermore, the enclosed space E is formed by the light-transmitting layer 5, the support layer 4, and the sensing chip 2, and the inner barrier wall 62 is located within the enclosed space E.

[0059] Accordingly, since the support layer 4 is directly in contact with the light-transmitting layer 5 in this embodiment, the support layer 4 can receive light passing through the light-transmitting layer 5, thus allowing the support layer 4 to be made of a light-curing material (such as an ultraviolet light-curing material), thereby reducing the degree of heating of the air in the enclosed space E.

[0060] It should be noted that, in order to enable the grooved shielding layer 6 to have a better anti-glare effect and at the same time effectively prevent the air in the enclosed space E from being heated and expanding and pushing the support layer 4, causing it to deform or shift excessively to the outside, the inner barrier wall 62 and the outer barrier wall 63 preferably have at least some of the following technical features, but this application is not limited thereto.

[0061] At least one of the inner barrier wall 62 and the outer barrier wall 63 is truncated cone-shaped and tapers towards the sensing chip 2 along the preset direction D, but this application is not limited thereto. Further, in the preset direction D, the thickness T62 of the inner barrier wall 62 is 50% to 300% of the thickness T63 of the outer barrier wall 63, and preferably the thickness T62 of the inner barrier wall 62 is between 30% and 50% of the support thickness T4, while the thickness T63 of the outer barrier wall 63 is also between 30% and 50% of the support thickness T4. However, the above thicknesses can be adjusted and varied according to design requirements.

[0062] Furthermore, such as Figure 8 As shown, when the support layer 4 has undergone excessive deformation or displacement outward, the outer barrier wall 63 will block the outward displacement of the support layer 4, thereby limiting the magnitude of its displacement. Therefore, the contact area between the support layer 4 and the inner barrier wall 62 will be smaller than the contact area between the support layer 4 and the outer and inner barrier walls 62. Furthermore, the radius of curvature of the inner arc surface 41 of the support layer 4 is smaller than the radius of curvature of its outer arc surface 42. The center of curvature of the inner arc surface 41 can approximately fall within the enclosed space E, while the center of curvature of the outer arc surface 42 is located outside the sensor packaging structure 100.

[0063] In summary, the sensor packaging structure disclosed in this application, through the structural combination between the support layer and the trench-type shielding layer, can simultaneously achieve multiple technical effects (such as: while the trench-type shielding layer blocks visible light to reduce glare caused by reflection from the support layer, the trench-type shielding layer can also effectively prevent the support layer from excessively deforming or displacing outward, thereby avoiding peeling of the light-transmitting layer).

[0064] The content disclosed above is only an optional and feasible embodiment of this application, and is not intended to limit the patent scope of this application. Therefore, all equivalent technical changes made using the content of this application specification and drawings are included in the patent scope of this application.

Claims

1. A sensor packaging structure, characterized in that, The sensor packaging structure includes: One substrate; A sensing chip is disposed on the substrate along a predetermined direction and is electrically coupled to the substrate; wherein, a top portion of the sensing chip includes a sensing area and a bearing area surrounding the sensing area; A support layer, annular in shape, is disposed on the carrier area of ​​the sensing chip; a light-transmitting layer has a lower surface and an upper surface located on opposite sides, and the light-transmitting layer is located above the sensing chip through the support layer; wherein the sensing area faces the light-transmitting layer; and A grooved shielding layer, annular in shape and disposed on the lower surface of the light-transmitting layer, is used to block visible light from passing through; wherein the grooved shielding layer comprises: An inner barrier wall is located inside the support layer; An external barrier wall is located outside the supporting layer; and A connecting section connects the inner barrier wall and the outer barrier wall to jointly enclose and form an annular flow-blocking groove; wherein, the grooved shielding layer is disposed on the support layer with the connecting section, so that a portion of the support layer is located within the annular flow-blocking groove; The inner edge of the inner barrier wall has an opening located directly above the sensing area; the trench shielding layer, the light-transmitting layer, the support layer, and the sensing chip together form a closed space, and the inner barrier wall is located within the closed space.

2. The sensor packaging structure according to claim 1, characterized in that, The support layer has a support thickness in the preset direction, and the inner barrier wall has a thickness in the preset direction, which is between 10% and 30% of the support thickness.

3. The sensor packaging structure according to claim 1, characterized in that, The support layer has a support thickness in the preset direction, and the outer barrier wall has a thickness in the preset direction, which is between 10% and 30% of the support thickness.

4. The sensor packaging structure according to claim 1, characterized in that, The inner barrier wall has a thickness in the preset direction, which is 50% to 300% of the thickness of the outer barrier wall in the preset direction.

5. The sensor packaging structure according to claim 4, characterized in that, The connecting segment has a thickness in the preset direction, which is 10% to 80% of the thickness of the inner barrier wall.

6. The sensor packaging structure according to claim 1, characterized in that, The support layer has an inner arc surface and an outer arc surface, and the radius of curvature of the inner arc surface is smaller than the radius of curvature of the outer arc surface.

7. The sensor packaging structure according to claim 1, characterized in that, The contact area between the support layer and the inner barrier wall is smaller than the contact area between the support layer and the outer barrier wall.

8. The sensor packaging structure according to claim 1, characterized in that, The grooved shielding layer includes an extension connected to the outer barrier wall, and the edge of the extension is flush with the circumferential side of the light-transmitting layer.

9. The sensor packaging structure according to claim 1, characterized in that, The edge of the outer barrier wall is flush with the circumferential side of the light-transmitting layer.

10. The sensor packaging structure according to claim 1, characterized in that, At least one of the inner barrier wall and the outer barrier wall is truncated cone-shaped and tapers towards the sensing chip along the preset direction.

11. A sensor packaging structure, characterized in that, The sensor packaging structure includes: One substrate; A sensing chip is disposed on the substrate along a predetermined direction and is electrically coupled to the substrate; wherein, a top portion of the sensing chip includes a sensing area and a bearing area surrounding the sensing area; A support layer, annular in shape, is disposed on the carrier area of ​​the sensing chip; a light-transmitting layer has a lower surface and an upper surface located on opposite sides, and the light-transmitting layer is located above the sensing chip through the support layer; wherein the sensing area faces the light-transmitting layer; and A grooved shielding layer, annular in shape and disposed on the lower surface of the light-transmitting layer, is used to block visible light from passing through; wherein the grooved shielding layer comprises: An inner barrier wall is located inside the support layer; and An outer barrier wall is located outside the support layer; wherein the inner barrier wall, the outer barrier wall, and a portion of the lower surface of the light-transmitting layer together form an annular flow-blocking groove; wherein the light-transmitting layer is disposed on the support layer with a portion of its lower surface so that a portion of the support layer is located within the annular flow-blocking groove. The inner edge of the inner barrier wall has an opening located directly above the sensing area; the light-transmitting layer, the support layer, and the sensing chip together form a closed space, and the inner barrier wall is located within the closed space.

12. The sensor packaging structure according to claim 11, characterized in that, The support layer has a support thickness in the preset direction, and the inner barrier wall has a thickness in the preset direction, which is between 30% and 50% of the support thickness.

13. The sensor packaging structure according to claim 11, characterized in that, The support layer has a support thickness in the preset direction, and the outer barrier wall has a thickness in the preset direction, which is between 30% and 50% of the support thickness.

14. The sensor packaging structure according to claim 11, characterized in that, The inner barrier wall has a thickness in the preset direction, which is 50% to 300% of the thickness of the outer barrier wall in the preset direction.

15. The sensor packaging structure according to claim 11, characterized in that, The support layer has an inner arc surface and an outer arc surface, and the radius of curvature of the inner arc surface is smaller than the radius of curvature of the outer arc surface.

16. The sensor packaging structure according to claim 11, characterized in that, The contact area between the support layer and the inner barrier wall is smaller than the contact area between the support layer and the outer barrier wall.

17. The sensor packaging structure according to claim 11, characterized in that, The grooved shielding layer includes an extension connected to the outer barrier wall, and the edge of the extension is flush with the circumferential side of the light-transmitting layer.

18. The sensor packaging structure according to claim 11, characterized in that, The edge of the outer barrier wall is flush with the circumferential side of the light-transmitting layer.

19. The sensor packaging structure according to claim 11, characterized in that, At least one of the inner barrier wall and the outer barrier wall is truncated cone-shaped and tapers towards the sensing chip along the preset direction.

20. The sensor packaging structure according to claim 11, characterized in that, The sensor packaging structure includes a package formed on the substrate, and the sensing chip, the support layer, the light-transmitting layer, and the trench shielding layer are embedded in the package, while at least a portion of the upper surface of the light-transmitting layer is exposed outside the package; wherein, a portion of the annular choke groove located between the support layer and the outer barrier wall is filled with the package.

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