Sensing device and method of manufacturing a sensing device

Abstract

The present disclosure provides a sensing device, comprising a substrate, a circuit layer, a photosensitive component, a light-shielding layer, and a conductive layer. The circuit layer is disposed on the substrate. The photosensitive component is disposed on the substrate and electrically connected to the circuit layer. The light-shielding layer is disposed on the photosensitive component and has an opening. The opening overlaps the photosensitive component. The conductive layer is disposed on the light-shielding layer and electrically connected to the photosensitive component through the opening. The present disclosure also provides a manufacturing method of a sensing device.

Description

Technical Field

[0001] This disclosure relates to a sensing device and a method for manufacturing the sensing device, and more particularly to a method for manufacturing a sensing device that simplifies the manufacturing process. Background Technology

[0002] Optical sensing devices are widely used in consumer electronics products such as smartphones and wearable devices, and have become an indispensable necessity in modern society. With the booming development of these consumer electronics products, consumers have high expectations for their quality, functionality, and price.

[0003] The photosensitive component in an optical sensing device can convert the received light into electrical signals. The generated electrical signals can be transmitted to the driving components and logic circuits in the optical sensing device for processing and analysis.

[0004] To improve the performance of sensing devices, developing manufacturing methods that can further simplify the manufacturing process or reduce costs (e.g., reducing the number of photomasks and steps used) remains one of the topics that the industry is currently focusing on researching. Summary of the Invention

[0005] According to some embodiments of this disclosure, a sensing device is provided, comprising a substrate, a circuit layer, a photosensitive component, a light-shielding layer, and a conductive layer. The circuit layer is disposed on the substrate, the photosensitive component is disposed on the substrate and electrically connected to the circuit layer, the light-shielding layer is disposed on the photosensitive component and has an opening that overlaps with the photosensitive component, and the conductive layer is disposed on the light-shielding layer and passes through the opening and is electrically connected to the photosensitive component.

[0006] According to some embodiments of this disclosure, a method for manufacturing a sensing device is provided, comprising: providing a substrate; forming a circuit layer on the substrate; forming a photosensitive component on the circuit layer; forming a first insulating layer on the photosensitive component; forming a light-shielding layer on the first insulating layer; forming an opening in the light-shielding layer, the opening overlapping with the photosensitive component; patterning the first insulating layer through the opening to expose the photosensitive component; and forming a conductive layer on the light-shielding layer, wherein the conductive layer passes through the opening and is electrically connected to the photosensitive component.

[0007] To make the features or advantages of this disclosure more apparent and understandable, some embodiments are described below in conjunction with the accompanying drawings. Attached Figure Description

[0008] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings, wherein: Figures 1A to 1C This diagram shows a cross-sectional structural schematic of a sensing device at different process stages according to some embodiments of the present disclosure; Figure 2 This diagram shows a cross-sectional structural schematic of a sensing device according to some embodiments of the present disclosure; Figures 3A to 3C This diagram shows a cross-sectional structural schematic of a sensing device at different process stages according to some embodiments of the present disclosure; Figures 4A to 4C This diagram shows a cross-sectional view of some components of a sensing device at different process stages according to some embodiments of the present disclosure. Figures 5A to 5C This diagram shows cross-sectional structural schematics of some components of a sensing device at different process stages according to some embodiments of the present disclosure.

[0009] Figure 1A-5C The annotations in the attached figures are explained as follows: 10A, 10B, 10C: Sensing devices 100A: Circuit Layer 100a: First-type semiconductor layer 100b: Intrinsic Semiconductor Layer 100c: Second-type semiconductor layer 100u: Photosensitive element 101: Transparent conductive layer 102:Substrate 104a, 104a1, 104b: Conductive layers 106a, 106a1, 106a2, 106b, 106c, 106d: Insulation layer 106P: Opening 108a, 108a1, 108b, 108c: Insulation layer 110a, 110b, 110c: Light-shielding layers 130: Microlens d1: First distance d2: Second distance E1, e1: First edge E2, e2: Second edge P1, P2, P3: Openings RS: Groove TR1, TR2, TR3: Thin-film transistors V1, V2: Through holes Detailed Implementation

[0010] The following provides a detailed description of the sensing device and its manufacturing method according to embodiments of the present disclosure. It should be understood that the following description provides many different embodiments for implementing various forms of some embodiments of the present disclosure. The specific components and arrangements described below are merely for simple and clear description of some embodiments of the present disclosure. Of course, these are only examples and not limitations of the present disclosure. Furthermore, similar and / or corresponding reference numerals may be used in different embodiments to identify similar and / or corresponding components for clear description of the present disclosure. However, the use of these similar and / or corresponding reference numerals is only for simple and clear description of some embodiments of the present disclosure and does not represent any association between the different embodiments and / or structures discussed.

[0011] It should be understood that relative terms, such as "lower," "bottom," "higher," or "top," may be used in the embodiments to describe the relative relationship of one component to another in the figures. It is understood that if the apparatus in the figures is flipped upside down, the component described as being on the "lower" side will become the component on the "higher" side. The embodiments of this disclosure should be understood in conjunction with the accompanying drawings, which are also considered part of the disclosure. It should be understood that the drawings of this disclosure are not drawn to scale; in fact, the dimensions of components may be arbitrarily enlarged or reduced to clearly show the features of this disclosure.

[0012] Furthermore, when it is mentioned that a first material layer is located on or above a second material layer, it may include situations where the first material layer and the second material layer are in direct contact, or situations where the first material layer and the second material layer are not in direct contact, that is, situations where there may be one or more other material layers between the first material layer and the second material layer. However, if the first material layer is located directly on the second material layer, it indicates that the first material layer and the second material layer are in direct contact.

[0013] Furthermore, it should be understood that the ordinal numbers used in the specification and claims, such as "first," "second," etc., to modify components, do not in themselves imply any prior ordinal number for that (or these) components, nor do they represent the order of one component with another, or the order of manufacturing processes. The use of these ordinal numbers is solely to clearly distinguish one named component from another component with the same name. The claims and specification may not use the same terminology; for example, the first component in the specification may be the second component in the claims.

[0014] In some embodiments of this disclosure, terms such as "connection" and "interconnection," unless specifically defined, may refer to two structures being in direct contact, or to two structures not being in direct contact, wherein another structure is disposed between the two structures. Furthermore, these terms regarding engagement and connection may also include cases where both structures are movable or both structures are fixed. In addition, the terms "electrical connection" or "electrical coupling" include any direct and indirect electrical connection means.

[0015] In this text, the terms "about" and "substantially" typically indicate that a given value or range is within 10%, 5%, 3%, 2%, 1%, or 0.5%. The phrase "range between a first value and a second value" indicates that the range includes the first value, the second value, and other values ​​in between.

[0016] It should be understood that the features described below can be replaced, reorganized, or combined in several different embodiments to complete other embodiments without departing from the spirit of this disclosure. Features between embodiments can be arbitrarily combined and used as long as they do not violate the spirit of the invention or conflict with it.

[0017] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It is understood that such terms, for example, as defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the relevant art and the background or context of this disclosure, and should not be interpreted in an idealized or overly formal manner, unless specifically defined in embodiments of this disclosure.

[0018] Sensing devices typically integrate thin-film transistors, photosensitive components (e.g., photodiodes), and optical components (e.g., components with collimator functions) into a single device. The manufacturing process requires the use of a large number of photomasks and is quite complex.

[0019] According to embodiments of this disclosure, the method for manufacturing a sensing device can integrate a portion of the structure of components in the sensing device. For example, it can integrate a portion of the structure of a photosensitive component and an optical component, or integrate a portion of the structure of a photosensitive component and a circuit layer, reducing the number of photomasks and steps used in the manufacturing process, thus simplifying the process or improving yield. According to embodiments of this disclosure, the sensing device manufactured by the aforementioned method can reduce the equivalent capacitance of the photosensitive component, thereby improving the sensitivity of the sensing device or enhancing its overall performance. Furthermore, according to some embodiments, the structural design of the photosensitive component can further reduce the probability of leakage current or lower the capacitance value, thereby improving the performance of the photosensitive component.

[0020] Please refer to Figures 1A to 1C , Figures 1A to 1C The figures show cross-sectional structural schematics of the sensing device 10A at different process stages according to some embodiments of the present disclosure. It should be understood that, according to some embodiments, additional operational steps may be provided before, during, and / or after the manufacturing process of the sensing device 10A. According to some embodiments, some of these operational steps may be replaced or omitted. According to some embodiments, the order of some of these operational steps is interchangeable. Furthermore, it should be understood that, for clarity, some components of the sensing device 10A are omitted from the figures, and only some components are schematically shown. According to some embodiments, additional features may be added to the sensing device 10A described below. According to other embodiments, some features of the sensing device 10A described below may be replaced or omitted.

[0021] First, please refer to Figure 1A A substrate 102 is provided. Next, a circuit layer 100A can be formed on the substrate 102. According to some embodiments, the circuit layer 100A may include a buffer layer (not shown) and thin-film transistors, such as thin-film transistors TR1, TR2, and TR3 shown in the figures. The circuit layer 100A may also include conductive components electrically connected to the thin-film transistors, signal lines, insulating layers formed between the conductive components, and planarization layers. According to some embodiments, the signal lines may include, for example, current signal lines, voltage signal lines, high-frequency signal lines, and low-frequency signal lines. The signal lines may transmit component operating voltage (VDD), common ground voltage (VSS), or drive component terminal voltage; this disclosure is not limited thereto.

[0022] According to some embodiments, a thin-film transistor may include a switching transistor, a driving transistor, a reset transistor, a transistor amplifier, or other suitable thin-film transistors. Specifically, according to some embodiments, thin-film transistor TR1 may be a reset transistor, thin-film transistor TR2 may be a transistor amplifier or a source follower, and thin-film transistor TR3 may be a switching transistor, but is not limited thereto.

[0023] It should be understood that the number of thin-film transistors is not limited to those shown in the figures. Depending on the embodiment, the sensing device 10A may have other suitable numbers or types of thin-film transistors. Furthermore, the types of thin-film transistors may include top-gate thin-film transistors, bottom-gate thin-film transistors, dual-gate thin-film transistors, or combinations thereof. According to some embodiments, the thin-film transistors may be further electrically connected to a capacitor assembly, but are not limited thereto. Furthermore, the thin-film transistor may include at least one semiconductor layer, a gate dielectric layer, and a gate electrode layer. According to some embodiments, the material of the semiconductor layer may include amorphous silicon, polycrystalline silicon, or metal oxide, and different thin-film transistors may contain different semiconductor materials. For example, the semiconductor material of thin-film transistor TR1 or TR3 is metal oxide, and the semiconductor material of thin-film transistor TR2 is polycrystalline silicon, but this is not a limitation. According to some embodiments, the semiconductor materials of thin-film transistors TR1, TR2, and TR3 are all polycrystalline silicon. Thin-film transistors can exist in various forms well known to those skilled in the art, and detailed structures of thin-film transistors will not be described here.

[0024] According to some embodiments, substrate 102 may comprise a flexible substrate, a rigid substrate, or a combination thereof, but is not limited thereto. According to some embodiments, the material of substrate 102 may comprise glass, quartz, sapphire, ceramic, polyimide (PI), polycarbonate (PC), polyethylene terephthalate (PET), polypropylene (PP), other suitable materials, or combinations thereof, but is not limited thereto. Furthermore, according to some embodiments, substrate 102 may comprise a metal-glass fiber composite board or a metal-ceramic composite board, but is not limited thereto. In addition, the light transmittance of substrate 102 is not limited; that is, substrate 102 may be a transparent substrate, a semi-transparent substrate, or an opaque substrate.

[0025] like Figure 1A As shown, according to some embodiments, circuit layer 100A may include a conductive layer 104a, which may serve as the source electrode or drain electrode of a thin-film transistor. The source electrode or drain electrode may be further electrically connected to a subsequently formed photosensitive component. More specifically, according to some embodiments, a portion of the gate dielectric layer and dielectric layer in circuit layer 100A may be removed by a patterning process to form a via V1, and then the conductive layer 104a is formed in the via V1.

[0026] According to some embodiments, the conductive layer 104a may comprise a conductive material, such as a metallic material, a transparent conductive material, other suitable conductive materials, or combinations thereof, but is not limited thereto. The metallic material may include, for example, copper (Cu), silver (Ag), gold (Au), tin (Sn), aluminum (Al), molybdenum (Mo), tungsten (W), chromium (Cr), nickel (Ni), platinum (Pt), titanium (Ti), alloys of the aforementioned metals, other suitable materials, or combinations thereof, but is not limited thereto. Transparent conductive materials may include transparent conductive oxides (TCOs), such as indium tin oxide (ITO), antimony zinc oxide (AZO), tin oxide (SnO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO), antimony tin oxide (ATO), other suitable transparent conductive materials, or combinations thereof, but are not limited thereto.

[0027] According to some embodiments, the conductive layer 104a can be formed by chemical vapor deposition (CVD), physical vapor deposition (PVD), electroplating, electroless plating, other suitable processes, or combinations thereof. CVD processes may include, for example, low-pressure chemical vapor deposition (LPCVD), low-temperature chemical vapor deposition (LTCVD), rapid-rise chemical vapor deposition (RTCVD), plasma-assisted chemical vapor deposition (PECVD), or atomic layer deposition (ALD), but are not limited thereto. Physical vapor deposition processes may include, for example, sputtering, evaporation, pulsed laser deposition, etc., but are not limited thereto. Furthermore, a portion of the gate dielectric layer and dielectric layer can be removed by one or more photolithography and / or etching processes to form the via V1. According to some embodiments, the photolithography process may include photoresist coating (e.g., spin coating), soft baking, hard baking, shielding alignment, exposure, post-exposure baking, photoresist development, cleaning, and drying, but is not limited thereto. The etching process may include dry etching or wet etching, but is not limited to these.

[0028] Next, a photosensitive component 100u can be formed on the circuit layer 100A. According to some embodiments, the photosensitive component 100u may overlap with the source or drain electrode (e.g., conductive layer 104a) of a thin-film transistor (e.g., thin-film transistor TR1) in the normal direction of the substrate 102 (e.g., the Z direction in the figures). The photosensitive component 100u can be electrically connected to the thin-film transistor of the circuit layer 100A via the conductive layer 104a. The photosensitive component 100u can receive light, convert it into an electrical signal, and transmit the generated electrical signal to the circuit layer 100A for processing and analysis by circuit components (e.g., thin-film transistors TR1, TR2, and TR3) in the circuit layer 100A. According to some embodiments, the photosensitive component 100u may include a photodiode, other components capable of converting light signals and electrical signals, or combinations thereof, but is not limited thereto.

[0029] In detail, the photosensitive component 100u may include a first type semiconductor layer 100a, a second type semiconductor layer 100c, and an intrinsic semiconductor layer 100b. The first type semiconductor layer 100a may be formed first on the circuit layer 100A, the intrinsic semiconductor layer 100b may be formed on the first type semiconductor layer, and then the second type semiconductor layer 100c may be formed on the intrinsic semiconductor layer 100b. According to some embodiments, the first type semiconductor layer 100a of the photosensitive component 100u may be formed directly on the conductive layer 104a, and the first type semiconductor layer 100a may be electrically connected to the conductive layer 104a. For example, the photosensitive component 100u may be in contact with the source electrode or drain electrode of a thin-film transistor (e.g., thin-film transistor TR1), but this disclosure is not limited thereto. In some embodiments, there may be, for example, multiple photosensitive components 100u electrically connected to the conductive layer 104a, but this is not a limitation. It is worth noting that, with the aforementioned structural configuration, the photosensitive component 100u can contact the thin-film transistor of the circuit layer 100A and be directly electrically connected. The photosensitive component 100u and the thin-film transistor can be electrically connected without the need for additional conductive and insulating layers, thus simplifying the process and reducing manufacturing costs.

[0030] The photosensitive element 100u may have a PIN structure, a NIP structure, or other suitable structures. When light shines on the photosensitive element 100u, electron-hole pairs can be generated to form a photocurrent, but it is not limited thereto. According to some embodiments, the first type semiconductor layer 100a may be, for example, an N-type doped semiconductor layer, and the second type semiconductor layer 100c may be, for example, a P-type doped semiconductor layer, forming a NIP structure from bottom to top together with the intrinsic semiconductor layer 100b, but this disclosure is not limited thereto. According to other embodiments, the first type semiconductor layer 100a may be, for example, a P-type doped semiconductor layer, and the second type semiconductor layer 100c may be, for example, an N-type doped semiconductor layer, forming a PIN structure from bottom to top together with the intrinsic semiconductor layer 100b, but this disclosure is not limited thereto.

[0031] According to some embodiments, the materials of the first type semiconductor layer 100a, the intrinsic semiconductor layer 100b, and the second type semiconductor layer 100c may include semiconductor materials, such as silicon (e.g., amorphous silicon), germanium, indium gallium arsenide (InGaAs), or other suitable materials. According to some embodiments, the first type semiconductor layer 100a, the intrinsic semiconductor layer 100b, and the second type semiconductor layer 100c may be formed by epitaxial growth processes, ion implantation processes, chemical vapor deposition processes, physical vapor deposition processes, other suitable processes, or combinations thereof.

[0032] Furthermore, a transparent conductive layer 101 may be formed on the second type semiconductor layer 100c of the photosensitive component 100u. According to some embodiments, the transparent conductive layer 101 may serve as an electrode of the photosensitive component 100u. According to some embodiments, the edge of the transparent conductive layer 101 is recessed relative to the edge of the photosensitive component 100u (e.g., the edge of the second type semiconductor layer 100c), but this is not a limitation. Detailed structure of the photosensitive component 100u will be further described below.

[0033] According to some embodiments, the material of the transparent conductive layer 101 may include a transparent conductive material, which may include a transparent conductive oxide (TCO), such as indium tin oxide (ITO), antimony zinc oxide (AZO), tin oxide (SnO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO), antimony tin oxide (ATO), other suitable transparent conductive materials, or combinations thereof, but not limited thereto.

[0034] According to some embodiments, the transparent conductive layer 101 can be formed by chemical vapor deposition, physical vapor deposition, electroplating, electroless plating, other suitable processes, or combinations thereof. Furthermore, the transparent conductive layer 101 can be patterned by one or more photolithography and / or etching processes.

[0035] Next, insulating layers 106a and / or 108a can be formed on the photosensitive element 100u. Specifically, insulating layer 106a can be conformally formed on the circuit layer 100A, the photosensitive element 100u, and the transparent conductive layer 101, and insulating layer 106a can cover conductive layer 104a. Insulating layer 108a can be formed on the circuit layer 100A, the photosensitive element 100u, and the transparent conductive layer 101, and insulating layer 106a can cover conductive layer 104a, or may be further formed on top of insulating layer 106a. Insulating layer 108a can serve as a planarization layer.

[0036] The insulating layer 106a may have a single-layer or multi-layer structure. According to some embodiments, the material of the insulating layer 106a may comprise inorganic materials, organic materials, or combinations thereof, but is not limited thereto. For example, inorganic materials may comprise silicon nitride, silicon oxide, silicon oxynitride, other suitable materials, or combinations thereof, but are not limited thereto. For example, organic materials may comprise polyethylene terephthalate (PET), polyethylene (PE), polyethersulfone (PES), polycarbonate (PC), polymethyl methacrylate (PMMA), polyimide (PI), other suitable materials, or combinations thereof, but are not limited thereto.

[0037] According to some embodiments, the insulating layer 106a can be formed by coating, chemical vapor deposition, physical vapor deposition, printing, evaporation, sputtering, other suitable processes, or combinations thereof. In some embodiments, the insulating layer 106a can be patterned by one or more photolithography and / or etching processes as needed, but is not limited thereto.

[0038] According to some embodiments, the material of the insulating layer 108a may comprise organic materials, inorganic materials, other suitable materials, or combinations thereof, but is not limited thereto. For example, inorganic materials may comprise silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, other suitable materials, or combinations thereof, but are not limited thereto. For example, organic materials may comprise epoxy resins, silicone resins, acrylic resins (e.g., polymethyl methacrylate (PMMA), polyimide, perfluoroalkoxy alkane (PFA), other suitable materials, or combinations thereof, but are not limited thereto).

[0039] According to some embodiments, the insulating layer 108a can be formed by chemical vapor deposition, physical vapor deposition, coating, printing, other suitable processes, or combinations thereof. Furthermore, the insulating layer 108a can be planarized to give it a generally flat top surface. According to some embodiments, the planarization process may include grinding, chemical-mechanical polishing (CMP), other suitable planarization processes, or combinations thereof. In some embodiments, the insulating layer 108a may be patterned as needed by one or more photolithography and / or etching processes, but is not limited thereto.

[0040] Please refer to Figure 1B Next, an insulating layer 106b and a light-shielding layer 110a can be formed on the insulating layer 108a. According to some embodiments, the insulating layer 106b can be formed on the insulating layer 108a first, and then the light-shielding layer 110a can be formed on the insulating layer 106b. Furthermore, an opening P1 can be formed in the light-shielding layer 110a, and the opening P1 can overlap with the photosensitive element 100u in the normal direction of the substrate 102 (e.g., the Z direction in the figure). Then, the insulating layers 106a, 108a, and 106b can be patterned through the opening P1 to expose the photosensitive element 100u. In detail, a portion of the light-shielding layer 110a can be removed to form an opening P1. Then, using the light-shielding layer 110a as a shield, a patterning process is performed on the insulating layers 106a, 108a, and 106b. The insulating layers 106a, 108a, and 106b located below the opening P1 are removed to form a hole that exposes a portion of the photosensitive component 100u (e.g., the transparent conductive layer 101 that serves as an electrode of the photosensitive component 100u).

[0041] It is worth noting that the light-shielding layer 110a can serve as a shield for the patterning process, reducing the number of photomasks used in the process and lowering production costs. Furthermore, the light-shielding layer 110a also has optical functions; for example, it can reduce light reflection and absorb light reflected back and forth between the metal conductive layers, achieving anti-reflection or reducing optical noise. Moreover, the opening P1 can collimate light, functioning as a pinhole. Through the aforementioned structural configuration, part of the structure of the photosensitive component 100u and the optical component can be integrated, thereby simplifying the process or improving yield.

[0042] According to some embodiments, the material of the insulating layer 106b may be the same as or similar to the material of the aforementioned insulating layer 106a, and the method of forming the insulating layer 106b may be the same as or similar to the process of forming the aforementioned insulating layer 106a, which will not be repeated here.

[0043] According to some embodiments, the light-shielding layer 110a may comprise a metallic material, such as copper (Cu), aluminum (Al), molybdenum (Mo), indium (In), ruthenium (Ru), tin (Sn), gold (Au), platinum (Pt), zinc (Zn), silver (Ag), titanium (Ti), lead (Pb), nickel (Ni), chromium (Cr), magnesium (Mg), palladium (Pd), alloys of the above materials, other suitable metallic materials, or combinations thereof, but not limited thereto. In these embodiments, the impedance of the transparent conductive material in contact with it can be effectively reduced or the miniaturization of the opening can be improved, achieving a good light collimation effect. According to other embodiments, the light-shielding layer 110a may comprise an organic material, such as black resin, other suitable organic light-shielding materials, or combinations thereof, but not limited thereto.

[0044] According to some embodiments, the light-shielding layer 110a can be formed by chemical vapor deposition, physical vapor deposition, electroplating, electroless plating, other suitable processes, or combinations thereof. Furthermore, the light-shielding layer 110a can be patterned by one or more photolithography and / or etching processes to form the opening P1.

[0045] Please refer to Figure 1C Next, a conductive layer 104b can be formed on the light-shielding layer 110a, and the conductive layer 104b passes through the opening P1 and is electrically connected to the photosensitive element 100u. Specifically, the conductive layer 104b can be compliantly formed on the light-shielding layer 110a and can extend into the hole exposing the photosensitive element 100u. The conductive layer 104b can also be further formed on the side surfaces of the insulating layers 106a, 108a, 106b, and the light-shielding layer 110a, but is not limited thereto. The conductive layer 104b can, for example, contact the transparent conductive layer 101, such that the transparent conductive layer 101 can be disposed between the photosensitive element 100u and the conductive layer 104b, but is not limited thereto. In this embodiment, the conductive layer 104b can be electrically connected to the transparent conductive layer 101, that is, the conductive layer 104b can be electrically connected to the electrodes of the photosensitive element 100u. According to some embodiments, the conductive layer 104b can be used to provide a common voltage to the photosensitive component 100u, but is not limited thereto.

[0046] According to some embodiments, the conductive layer 104b may comprise a transparent conductive material, which may comprise a transparent conductive oxide (TCO), such as indium tin oxide (ITO), antimony zinc oxide (AZO), tin oxide (SnO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO), antimony tin oxide (ATO), other suitable transparent conductive materials, or combinations thereof, but not limited thereto.

[0047] According to some embodiments, the conductive layer 104b can be formed by chemical vapor deposition, physical vapor deposition, electroplating, electroless plating, other suitable processes, or combinations thereof. In some embodiments, the conductive layer 104b can be patterned by one or more photolithography and / or etching processes as needed, but is not limited thereto.

[0048] Next, an insulating layer 106c can be formed on the conductive layer 104b. The insulating layer 106c can be compliantly formed on the conductive layer 104b and can extend into the aforementioned hole that exposes the photosensitive component 100u.

[0049] According to some embodiments, the material of insulating layer 106c may be the same as or similar to the material of insulating layer 106a or insulating layer 106b, and the method of forming insulating layer 106c may be the same as or similar to the process of forming insulating layer 106a or insulating layer 106b, which will not be repeated here.

[0050] Next, an insulating layer 108b can be formed on the insulating layer 106c. A portion of the insulating layer 108b can also extend into the aforementioned hole exposing the photosensitive element 100u. Subsequently, a light-shielding layer 110b, an insulating layer 108c, a light-shielding layer 110c, and a microlens 130 can be sequentially formed above the insulating layer 108b. In this embodiment, an insulating layer 106d can be further included, disposed above the insulating layer 108c and the light-shielding layer 110c, and a microlens 130 is formed above the insulating layer 106d. The insulating layers 108b and 108c can serve as planarization layers. According to some embodiments, the microlens 130 can partially overlap with the light-shielding layer 110c in the normal direction of the substrate 102 (e.g., the Z direction in the figures).

[0051] Light-shielding layers 110b and 110c can reduce light reflection. For example, they can absorb light reflected back and forth between the metal conductive layers, achieving anti-reflection or reducing optical noise. Light-shielding layers 110b and 110c can also block large-angle light, thus reducing the signal-to-noise ratio. Figure 1C As shown, a light-shielding layer 110b may be disposed on a light-shielding layer 110a. The light-shielding layer 110b has an opening P2, and the opening P2 overlaps with the opening P1. Specifically, the opening P2 of the light-shielding layer 110b may overlap with the opening P1 of the light-shielding layer 110a in the normal direction of the substrate 102 (e.g., the Z direction in the figures). According to some embodiments, the light-shielding layer 110b may have a plurality of openings P2, and the plurality of openings P2 overlap with a plurality of openings P1 respectively. Furthermore, a light-shielding layer 110c may be disposed on a light-shielding layer 110b. The light-shielding layer 110c has an opening P3, and the opening P3 overlaps with the opening P2. Specifically, the opening P3 of the light-shielding layer 110c may overlap with the opening P2 of the light-shielding layer 110b in the normal direction of the substrate 102. According to some embodiments, the light-shielding layer 110c may have a plurality of openings P3, and the plurality of openings P3 overlap with a plurality of openings P2 respectively.

[0052] Furthermore, the width of opening P2 may, for example, be greater than or equal to the width of opening P1, and the width of the third opening P3 may, for example, be greater than or equal to the width of the second opening P2. According to some embodiments, the width of opening P1 may be between 1 micrometer (μm) and 5 micrometers (μm) (i.e., 1 μm ≤ width of opening P1 ≤ 5 μm), but is not limited thereto. According to some embodiments, the width of opening P2 may be between 5 micrometers (μm) and 10 micrometers (μm) (i.e., 5 μm ≤ width of opening P2 ≤ 10 μm), but is not limited thereto. According to some embodiments, the width of opening P3 may be between 10 micrometers (μm) and 20 micrometers (μm) (i.e., 10 μm ≤ width of opening P3 ≤ 20 μm), but is not limited thereto.

[0053] According to embodiments of this disclosure, the widths of openings P1, P2, and P3 refer to the maximum width of the bottommost portion of each opening in a direction perpendicular to the normal direction of the substrate 102 (e.g., the X direction in the figures). It should be understood that, according to embodiments of this disclosure, the width, thickness, or height of each component, or the spacing or distance between components, can be measured using an optical microscope (OM), a scanning electron microscope (SEM), an alpha-step thickness gauge, an ellipsometry, or other suitable methods. More specifically, according to some embodiments, a scanning electron microscope can be used to obtain any cross-sectional image of the component to be measured, and the width, thickness, or height of each component, or the spacing or distance between components, can be measured.

[0054] Furthermore, the microlens 130 helps to focus light on a specific area, such as focusing light on the photosensitive element 100u. Figure 1C As shown, the microlens 130 is disposed on the photosensitive element 100u and overlaps with the openings P1, P2, and P3 in the normal direction of the substrate 102 (e.g., the Z direction in the figure). According to some embodiments, using the microlens 130 in conjunction with the openings P1, P2, and P3, which have collimation capabilities, helps to miniaturize the photosensitive element 100u and reduces the influence of stray capacitance on the photocurrent of the photosensitive element 100u.

[0055] According to some embodiments, the materials of insulating layer 108b and insulating layer 108c may be the same as or similar to the material of insulating layer 108a, and the methods of forming insulating layer 108b and insulating layer 108c may be the same as or similar to the process of forming insulating layer 108a, which will not be repeated here.

[0056] According to some embodiments, the materials of light-shielding layers 110b and 110c may be the same as or similar to the material of the aforementioned light-shielding layer 110a, and the methods for forming light-shielding layers 110b and 110c may be the same as or similar to the process for forming the aforementioned light-shielding layer 110a, which will not be repeated here. Furthermore, light-shielding layers 110b and 110c may be patterned by one or more photolithography processes and / or etching processes to form openings P2 and P3, respectively.

[0057] According to some embodiments, the material of the microlens 130 may include silicon dioxide, polymethyl methacrylate (PMMA), cycloolefin polymer (COP), polycarbonate (PC), other suitable materials, or combinations thereof, but is not limited thereto.

[0058] According to some embodiments, the microlens 130 can be formed by chemical vapor deposition, physical vapor deposition, coating, printing, other suitable processes, or combinations thereof. Furthermore, the microlens 130 can be patterned to have a suitable shape and profile by photolithography and / or etching processes.

[0059] like Figure 1C As shown, the formed sensing device 10A may include a substrate 102, a circuit layer 100A, a photosensitive component 100u, a light-shielding layer 110a, and a conductive layer 104b. The circuit layer 100A may be disposed on the substrate 102. The photosensitive component 100u may be disposed on the substrate 102 and electrically connected to the circuit layer 100A. The light-shielding layer 110a may be disposed on the photosensitive component 100u and has an opening P1 that overlaps with the photosensitive component 100u. The conductive layer 104b is disposed on the light-shielding layer 110a and passes through the opening P1 and is electrically connected to the photosensitive component 100u. According to some embodiments, the light-shielding layer 110a may contain a metallic material and may be electrically connected to the conductive layer 104b. According to some embodiments, the light-shielding layer 110a may contain an organic material and may be in contact with the conductive layer 104b. According to some embodiments, circuit layer 100A may include a thin-film transistor (e.g., thin-film transistor TR1), and photosensitive component 100u may overlap with the source electrode or drain electrode of thin-film transistor TR1 (e.g., conductive layer 104a). According to some embodiments, photosensitive component 100u may contact the source electrode or drain electrode of thin-film transistor (e.g., thin-film transistor TR1) (e.g., conductive layer 104a). According to some embodiments, sensing device 10A may further include a transparent conductive layer 101, which may be disposed between photosensitive component 100u and conductive layer 104b.

[0060] Next, please refer to Figure 2 , Figure 2The diagram shows a cross-sectional view of the sensing device 10B according to other embodiments of this disclosure. It should be understood that, for clarity, some components of the sensing device 10B are omitted from the diagram, and only some components are schematically shown. According to some embodiments, additional features may be added to the sensing device 10B described below. According to other embodiments, some features of the sensing device 10B described below may be replaced or omitted. Furthermore, it should be understood that components that are the same or similar to those described above will be indicated by the same or similar reference numerals, and their materials, manufacturing methods, and functions are the same or similar to those described above; therefore, this part will not be repeated hereafter.

[0061] Figure 2 The sensing device 10B shown is generally similar to the sensing device 10A. The differences between them include that the sensing device 10B further includes a conductive layer 104a1, an insulating layer 106a1, and an insulating layer 108a1 disposed between the circuit layer 100A and the photosensitive component 100u. The photosensitive component 100u can be electrically connected to the thin-film transistor of the circuit layer 100A via the additional conductive layer 104a1. Specifically, in this embodiment, after the conductive layer 104a and the insulating layer 106a are formed, an insulating layer 108a1 can be formed over the conductive layer 104a and the insulating layer 106a. The insulating layer 108a1 can cover the aforementioned conductive layer 104a and the insulating layer 106a, and the insulating layer 108a1 can cover the thin-film transistors TR1, TR2, and TR3. Next, a portion of the insulating layer 108a1 can be removed using a patterning process to form a via V2. Then, an insulating layer 106a1 and a conductive layer 104a1 are formed on the insulating layer 108a1 and in the via V2. For example... Figure 2 As shown, a portion of the conductive layer 104a1 can be electrically connected to the conductive layer 104a through the insulating layer 108a1, and the conductive layer 104a can be electrically connected to the semiconductor layer of the thin-film transistor TR1, for example, through the gate dielectric layer and the dielectric layer. Next, a photosensitive component 100u can be formed on the conductive layer 104a1, and the photosensitive component 100u can be electrically connected to the thin-film transistor of the circuit layer 100A via the conductive layer 104a1 and the conductive layer 104a.

[0062] Furthermore, the sensing device 10B may include a plurality of photosensitive elements 100u electrically connected to the conductive layer 104a1, and the conductive layer 104a1 may serve as electrodes of the photosensitive elements 100u. Moreover, the conductive layer 104b may be electrically connected to a plurality of transparent conductive layers 101 disposed on the photosensitive elements 100u. The sensing device 10B also has a plurality of openings P1, a plurality of openings P2, and a plurality of openings P3 corresponding to the plurality of photosensitive elements 100u. Furthermore, as... Figure 2As shown, according to some embodiments, the microlens 130 can be directly disposed on the insulating layer 108c and the light-shielding layer 110c, and the insulating layer 106d can be selectively omitted. Furthermore, in the normal direction of the substrate 102 (e.g., the Z direction in the figures), the microlens 130 can partially overlap with the light-shielding layer 110c. In some embodiments, the number of photosensitive elements 100u can be, for example, one, but is not limited thereto.

[0063] According to some embodiments, the materials of the conductive layer 104a1 and the insulating layer 106a1 may be the same as or similar to the materials of the aforementioned conductive layer 104a and the insulating layer 106a, and the method of forming the conductive layer 104a1 and the insulating layer 106a1 may be the same as or similar to the process of forming the aforementioned conductive layer 104a and the insulating layer 106a, which will not be repeated here.

[0064] Next, please refer to Figures 3A to 3C , Figures 3A to 3C The figures show cross-sectional structural schematics of the sensing device 10C at different process stages according to other embodiments of the present disclosure. It should be understood that, according to some embodiments, additional operational steps may be provided before, during, and / or after the manufacturing method of the sensing device 10C. According to some embodiments, some of these operational steps may be replaced or omitted. According to some embodiments, the order of some of these operational steps is interchangeable. Furthermore, it should be understood that, for clarity, some components of the sensing device 10C are omitted from the figures, and only some components are schematically shown. According to some embodiments, additional features may be added to the sensing device 10C described below. According to other embodiments, some features of the sensing device 10C described below may be replaced or omitted.

[0065] First, please refer to Figure 3A A substrate 102 is provided. Next, a circuit layer 100A can be formed on the substrate 102. It should be understood that although only the thin-film transistor TR1 is shown in the figures, the circuit layer 100A of the sensing device 10B may further include other thin-film transistors. The circuit layer 100A may include a conductive layer 104a. Specifically, according to some embodiments, a portion of the gate dielectric layer and dielectric layer in the circuit layer 100A can be removed by a patterning process to form a via V1, and then the conductive layer 104a is formed in the via V1. Next, a first-type semiconductor layer 100a of the photosensitive component 100u can be formed on the conductive layer 104a. More specifically, the first-type semiconductor layer 100a can be compliantly formed on the conductive layer 104a. Furthermore, the first-type semiconductor layer 100a and the conductive layer 104a can, for example, be patterned together to form a discontinuous structure.

[0066] Please refer to Figure 3BNext, an insulating layer 106a1 can be formed on the first type semiconductor layer 100a, and a portion of the insulating layer 106a1 can be removed by a patterning process to form a plurality of openings 106P, which expose a portion of the first type semiconductor layer 100a. Then, an intrinsic semiconductor layer 100b and a second type semiconductor layer 100c can be sequentially formed on the first type semiconductor layer 100a. The insulating layer 106a1 has a plurality of openings 106P, through which the intrinsic semiconductor layer 100b can contact the first type semiconductor layer 100a. Specifically, the photosensitive component 100u may include a first type semiconductor layer 100a, a second type semiconductor layer 100c, and an intrinsic semiconductor layer 100b disposed between the first type semiconductor layer 100a and the second type semiconductor layer 100c, and a portion of the insulating layer 106a1 may be disposed between the first type semiconductor layer 100a and the intrinsic semiconductor layer 100b.

[0067] Next, please refer to Figure 3C Next, a transparent conductive layer 101 can be formed on the second type semiconductor layer 100c of the photosensitive component 100u. For example, multiple transparent conductive layers 101 can be formed on the second type semiconductor layer 100c. Then, an insulating layer 106a2 and an insulating layer 108a can be formed on the photosensitive component 100u. The insulating layer 106a2 can be compliantly formed on the circuit layer 100A, the photosensitive component 100u, and the transparent conductive layer 101. The insulating layer 106a2 can cover the conductive layer 104a and the first type semiconductor layer 100a or can further contact the insulating layer 106a1. Then, an insulating layer 108a can be formed on top of the insulating layer 106a2.

[0068] Next, a light-shielding layer 110a can be formed on the insulating layer 108a. Furthermore, an opening P1 can be formed in the light-shielding layer 110a, which overlaps with the photosensitive element 100u in the normal direction of the substrate 102 (e.g., the Z direction in the figures). Then, the insulating layers 106a and 108a can be patterned through the opening P1 to expose the photosensitive element 100u. Specifically, a portion of the light-shielding layer 110a can be removed to form the opening P1. Then, using the light-shielding layer 110a as a shield, a patterning process is performed on the insulating layers 106a and 108a, and the insulating layers 106a and 108a located below the opening P1 are removed to form a hole exposing a portion of the photosensitive element 100u (e.g., the transparent conductive layer 101 serving as an electrode of the photosensitive element 100u). A conductive layer 104b can then be formed on the light-shielding layer 110a, and the conductive layer 104b passes through the opening P1 and is electrically connected to the photosensitive component 100u.

[0069] Next, an insulating layer 106c can be formed on the conductive layer 104b. The insulating layer 106c can be compliantly formed on the conductive layer 104b and can extend into the aforementioned hole exposing the photosensitive element 100u. Next, an insulating layer 108b can be formed on the insulating layer 106c. A portion of the insulating layer 108b can also extend into the aforementioned hole exposing the photosensitive element 100u. Subsequently, a light-shielding layer 110b, an insulating layer 108c, a light-shielding layer 110c, and an insulating layer 106d can be sequentially formed above the insulating layer 108b. An insulating layer 106d is formed above the insulating layer 108c and the light-shielding layer 110c, and a microlens 130 is formed above the insulating layer 106d.

[0070] It is worth noting that in this embodiment, multiple transparent conductive layers 101 can contact the same photosensitive component 100u (e.g., the second type semiconductor layer 100c). Therefore, the photosensitive component 100u has fewer edges, which can reduce the occurrence of structural defects or leakage current at the edges.

[0071] Next, please refer to Figures 4A to 4C , Figures 4A to 4C This diagram shows cross-sectional structural schematics of some components of a sensing device at different process stages according to some embodiments of the present disclosure. Specifically, Figures 4A to 4C A partial cross-sectional schematic diagram of the display sensing device is shown to further illustrate the detailed structure of the photosensitive element 100u.

[0072] like Figure 4A As shown, after the first type semiconductor layer 100a, the intrinsic semiconductor layer 100b, and the second type semiconductor layer 100c are sequentially formed on the conductive layer 104a, a transparent conductive layer 101 can be formed on the second type semiconductor layer 100c. The transparent conductive layer 101 can be patterned using one or more photolithography and / or etching processes, such that the edge of the transparent conductive layer 101 is recessed relative to the edge of the photosensitive element 100u (e.g., the edge of the second type semiconductor layer 100c). Following the foregoing, an insulating layer 106a, an insulating layer 108a, an insulating layer 106b, and a light-shielding layer 110a can then be formed on the photosensitive element 100u and the transparent conductive layer 101.

[0073] like Figure 4BAs shown, insulating layers 106b, 108, and 106a can be patterned through opening P1 of the light-shielding layer 110a. In this embodiment, when patterning the insulating layer 106a, a portion of the photosensitive element 100u (e.g., the second-type semiconductor layer 100c and the intrinsic semiconductor layer 100b) can be further removed. Specifically, the width of the transparent conductive layer 101 is smaller than the width of the opening P1, and the transparent conductive layer 101 can act as a shield. A portion of the second-type semiconductor layer 100c and the intrinsic semiconductor layer 100b are removed to form a groove RS in the photosensitive element 100u. The groove RS at least partially surrounds the transparent conductive layer 101. The groove RS can extend downwards from the transparent conductive layer 101 to the intrinsic semiconductor layer 100b.

[0074] Please refer to Figure 4C Next, a conductive layer 104b can be formed on the light-shielding layer 110a, and the conductive layer 104b passes through the opening P1 to be electrically connected to the photosensitive element 100u. The conductive layer 104b is formed on and electrically connected to the transparent conductive layer 101, and a portion of the conductive layer 104b is formed in the groove RS. In detail, the conductive layer 104b can be compliantly formed on the light-shielding layer 110a and can extend into the holes exposing the photosensitive element 100u and the groove RS. The conductive layer 104b can be formed on the side surfaces of the insulating layers 106a, 108a, 106b and the light-shielding layer 110a, and the conductive layer 104b can partially extend into the second type semiconductor layer 100c and the intrinsic semiconductor layer 100b of the photosensitive element 100u.

[0075] like Figure 4C As shown, according to some embodiments, in a cross-section of the sensing device, an edge of the transparent conductive layer 101 and an edge of the photosensitive component are adjacent to each other and separated by a distance. For example, the first edge e1 of the transparent conductive layer 101 and the first edge E1 of the photosensitive component 100u (e.g., the edge of the second type semiconductor layer 100c) are separated by a first distance d1, and the second edge e2 of the transparent conductive layer 101 and the second edge E2 of the photosensitive component 100u (e.g., another edge of the second type semiconductor layer 100c) are separated by a second distance d2. The first edge e1 and the second edge e2 of the transparent conductive layer 101 are opposite each other, and the first edge E1 and the second edge E2 of the photosensitive component 100u are opposite each other. In this embodiment, the second distance d2 may be different from the first distance d1, but is not limited thereto.

[0076] Next, please refer to Figures 5A to 5C , Figures 5A to 5C This diagram shows cross-sectional structural schematics of some components of a sensing device at different process stages according to other embodiments of the present disclosure. Specifically, Figures 5A to 5CA partial cross-sectional schematic diagram of the display sensing device is shown to further illustrate the detailed structure of the photosensitive element 100u.

[0077] like Figure 5A As shown, according to some embodiments, after forming the first type semiconductor layer 100a and the intrinsic semiconductor layer 100b of the photosensitive component 100u on the conductive layer 104a, insulating layers 106a, 108a, 106b, and a light-shielding layer 110a can be formed on the first type semiconductor layer 100a and the intrinsic semiconductor layer 100b of the photosensitive component 100u. Then, a portion of the photosensitive component 100u, insulating layers 106a, 108a, and 106b can be patterned through the opening P1 of the light-shielding layer 110a to expose the photosensitive component 100u. Specifically, a portion of the insulating layers 106a, 108a, and 106b can be removed by a patterning process to expose a portion of the intrinsic semiconductor layer 100b.

[0078] Please refer to Figure 5B Next, a portion of the exposed intrinsic semiconductor layer 100b can be doped to form a second type semiconductor layer 100c. In this embodiment, the light-shielding layer 110a can be patterned first to form an opening P1, and then an ion implantation process can be performed on the intrinsic semiconductor layer 100b through the opening P1 to form the second type semiconductor layer 100c. Since the second type semiconductor layer 100c is formed after the opening P1, in this embodiment, the range of the second type semiconductor layer 100c approximately corresponds to the opening P1, and the width of the second type semiconductor layer 100c can be smaller than the width of the intrinsic semiconductor layer 100b.

[0079] Please refer to Figure 5C Next, a conductive layer 104b can be formed on the light-shielding layer 110a, and the conductive layer 104b passes through the opening P1 to be electrically connected to the photosensitive element 100u. The conductive layer 104b can contact the second type semiconductor layer 100c. In this embodiment, the conductive layer 104b can further contact the intrinsic semiconductor layer 100b, but is not limited thereto. Furthermore, in this embodiment, it is not necessary to form a transparent conductive layer 101 on the photosensitive element 100u.

[0080] In summary, according to the embodiments of this disclosure, the method for manufacturing a sensing device can integrate a portion of the structure of the components in the sensing device. For example, it can integrate a portion of the structure of the photosensitive component and the optical component, or integrate a portion of the structure of the photosensitive component and the circuit layer, thereby reducing the number of photomasks and steps used in the manufacturing process, simplifying the process, or improving the yield. According to the embodiments of this disclosure, the sensing device manufactured by the aforementioned method can reduce the equivalent capacitance of the photosensitive component, thereby improving the sensitivity of the sensing device or enhancing the overall performance of the sensing device. Furthermore, according to some embodiments, the probability of leakage current or the capacitance value can be further reduced by the structural design of the photosensitive component, thereby improving the performance of the photosensitive component.

[0081] While the embodiments and advantages of this disclosure have been disclosed above, it should be understood that any person skilled in the art can make modifications, substitutions, and refinements without departing from the spirit and scope of this disclosure. Features between embodiments of this disclosure can be freely combined and used as long as they do not violate the spirit of the invention or conflict with it. Furthermore, the scope of protection of this disclosure is not limited to the processes, machines, manufacturing, material composition, apparatus, methods, and steps described in the specific embodiments of the specification. Any person skilled in the art can understand from the disclosure of this disclosure that current or future developed processes, machines, manufacturing, material composition, apparatus, methods, and steps can be used according to this disclosure as long as they can perform substantially the same function or obtain substantially the same results in the embodiments described herein. Therefore, the scope of protection of this disclosure includes the aforementioned processes, machines, manufacturing, material composition, apparatus, methods, and steps. The scope of protection of this disclosure shall be determined by the scope of the appended claims. No embodiment or claim of this disclosure needs to achieve all the purposes, advantages, and features disclosed in this disclosure.

Claims

1. A sensing device, characterized in that, include: One substrate; A circuit layer is disposed on the substrate; A photosensitive component is disposed on the substrate and electrically connected to the circuit layer; A light-shielding layer is disposed on the photosensitive component and has an opening that overlaps with the photosensitive component; A conductive layer is disposed on the light-shielding layer, and the conductive layer passes through the opening and is electrically connected to the photosensitive component; and An insulating layer is disposed on the circuit layer; The photosensitive component includes a first type semiconductor layer, a second type semiconductor layer, and an intrinsic semiconductor layer disposed between the first type semiconductor layer and the second type semiconductor layer. A portion of the insulating layer is disposed between the first type semiconductor layer and the intrinsic semiconductor layer. The insulating layer has multiple openings, and the intrinsic semiconductor layer contacts the first type semiconductor layer through the multiple openings.

2. The sensing device as claimed in claim 1, characterized in that, The light-shielding layer includes a metallic material and is electrically connected to the conductive layer.

3. The sensing device as claimed in claim 1, characterized in that, The light-shielding layer comprises an organic material and is in contact with the conductive layer.

4. The sensing device as claimed in claim 1, characterized in that, The circuit layer includes a thin-film transistor, and the photosensitive component overlaps with a source electrode or a drain electrode of the thin-film transistor.

5. The sensing device as claimed in claim 4, characterized in that, The photosensitive component is in contact with the source electrode or the drain electrode of the thin-film transistor.

6. The sensing device as claimed in claim 1, characterized in that, It also includes a transparent conductive layer disposed between the photosensitive component and the conductive layer.

7. The sensing device as claimed in claim 6, characterized in that, In a cross-section of the sensing device, a first edge of the transparent conductive layer and a first edge of the photosensitive component are adjacent to each other and separated by a first distance.

8. The sensing device as claimed in claim 6, characterized in that, The photosensitive component has a groove that at least partially surrounds the transparent conductive layer.

9. The sensing device as claimed in claim 8, characterized in that, The conductive layer is disposed on the transparent conductive layer and electrically connected to the transparent conductive layer, and a portion of the conductive layer is disposed in the groove.

10. A method for manufacturing a sensing device, characterized in that, include: Provide a substrate; A circuit layer is formed on the substrate; A photosensitive component is formed on the circuit layer; A first insulating layer is formed on the photosensitive component; A light-shielding layer is formed on the first insulating layer; An opening is formed in the light-shielding layer, and the opening overlaps with the photosensitive component; The first insulating layer is patterned through the opening to expose the photosensitive component; as well as A conductive layer is formed on the light-shielding layer, and the conductive layer passes through the opening and is electrically connected to the photosensitive component; The step of forming the photosensitive component on the circuit layer includes: A first-type semiconductor layer is formed on the circuit layer; A second insulating layer is formed on the first type of semiconductor layer; A portion of the second insulating layer is removed to form multiple openings; An intrinsically semiconductor layer is formed on the second insulating layer and the first type semiconductor layer, and the intrinsically semiconductor layer contacts the first type semiconductor layer through the plurality of openings; and A second type semiconductor layer is formed on the intrinsic semiconductor layer.

11. The method for manufacturing the sensing device as described in claim 10, characterized in that, Including: A transparent conductive layer is formed on the second type semiconductor layer; and A portion of the second-type semiconductor layer and a portion of the intrinsic semiconductor layer are removed to form a groove in the photosensitive component.

12. The method for manufacturing the sensing device as described in claim 11, characterized in that, The conductive layer is formed on the transparent conductive layer, and a portion of the conductive layer is formed in the groove.

13. The method for manufacturing the sensing device as described in claim 10, characterized in that, After forming the intrinsic semiconductor layer on the first type of semiconductor layer, the method further includes: Remove a portion of the first insulating layer to expose a portion of the inherently semiconductor layer; and This portion of the intrinsic semiconductor layer is doped to form the second type of semiconductor layer.

Images