一种多波长MicroLED芯片及制备方法
By forming a protrusion structure and a distributed Bragg reflector on the GaN layer, a multi-wavelength MicroLED chip was developed, solving the problem that traditional MicroLED chips can only emit monochromatic light. This enabled multi-wavelength light emission, simplified the process, and reduced costs.
CN117637956BActive Publication Date: 2026-07-17WUHAN UNIV
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- WUHAN UNIV
- Filing Date
- 2023-11-21
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
Traditional MicroLED chips can only emit monochromatic light. Existing methods for achieving full color have problems such as uneven chip luminous efficiency, difficulty in mass transfer, or poor stability of color conversion materials.
Method used
A multi-wavelength MicroLED chip was designed by forming a protrusion structure and a distributed Bragg mirror on a GaN layer to achieve multi-wavelength light emission in different slope regions, and the chip was fabricated using a single epitaxial growth process.
Benefits of technology
It achieves light emission of different wavelengths on a single chip, avoiding the problems of low transfer rate and poor consistency in traditional methods, and the process is simple and low-cost.
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Figure CN117637956B_ABST
Abstract
本申请涉及一种多波长M icroLED芯片及制备方法，其包括衬底，以及设于衬底上的外延结构，外延结构包括若干个发光单元，发光单元包括朝远离衬底方向依次布置的第一GaN层、I nGaN / GaN多量子阱有源层、第二GaN层、分布式布拉格反射镜和绝缘层，以及与第二GaN层和第一GaN层分别电连接的第一金属电极和第二金属电极；第一GaN层的表面形成有凸起，以使I nGaN / GaN多量子阱有源层呈起伏构造，起伏构造包括至少两个不同坡度以发出不同波长光的区域，每一区域均配置有一第一金属电极；第一GaN层和第二GaN层中，一个为n型GaN层，另一个为p型GaN层。本申请实现了单个芯片上不同波长的发光，工艺简单且成本较低，同时避免了传统MicroLED芯片在巨量转移工艺中易出现的转移率低、一致性差等问题。
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