Circuit board assembly and method of manufacturing the same

Abstract

The present application provides a circuit board assembly and a manufacturing method thereof. The circuit board assembly includes a circuit board, an embedded die, a heat dissipation module and a temperature switch. The embedded die is embedded and electrically connected to the circuit board. The heat dissipation module is disposed on the circuit board and has first and second electrical contacts. The heat dissipation module is thermally coupled to the embedded die, and the first electrical contact is electrically connected to the circuit board. The temperature switch is located between at least a portion of the circuit board and the second electrical contact. The temperature switch includes first and second metal layers that are stacked on each other. The first metal layer is electrically connected to the circuit board and thermally coupled to the embedded die, and the first metal layer has a thermal expansion coefficient that is different from a thermal expansion coefficient of the second metal layer, so that the temperature switch deforms to contact or separate from the second electrical contact of the heat dissipation module due to a temperature change of the embedded die.

Description

Technical Field

[0001] This invention relates to a circuit board assembly and a method for manufacturing the same, and more particularly to a circuit board assembly including a temperature switch and a method for manufacturing the same. Background Technology

[0002] In circuit board assemblies, chips on the circuit board generate a significant amount of heat, so heat dissipation modules are typically installed on the circuit board to cool the chips. Generally, regardless of whether the chip requires cooling, the heat dissipation module is always electrically connected to the circuit board and in an active state, cooling the chip. To prevent the heat dissipation module from continuing to operate when the chip does not require cooling, thus causing unnecessary power consumption and reducing the lifespan of the heat dissipation module, some manufacturers use temperature control systems to detect the chip temperature and control the activation and deactivation of the heat dissipation module based on the detected temperature.

[0003] However, such a temperature control system requires not only a temperature sensor but also a complex control system to control the activation and deactivation of the heat dissipation module based on the chip temperature detected by the temperature sensor. In other words, traditional circuit board assemblies cannot use a simple mechanism to control the activation and deactivation of the heat dissipation module based on the chip temperature. Summary of the Invention

[0004] The present invention provides a circuit board assembly and a method for manufacturing the same, which uses a simple mechanism to control the activation and deactivation of a heat dissipation module based on the temperature of the chip.

[0005] An embodiment of the present invention discloses a circuit board assembly comprising a circuit board, an embedded chip, a heat dissipation module, and a temperature switch. The embedded chip is embedded and electrically connected to the circuit board. The heat dissipation module is disposed on the circuit board and has a first electrical contact and a second electrical contact. The heat dissipation module is thermally coupled to the embedded chip, and the first electrical contact of the heat dissipation module is electrically connected to the circuit board. The temperature switch is located between at least a portion of the circuit board and the second electrical contact. The temperature switch comprises a first metal layer and a second metal layer stacked on top of each other. The first metal layer of the temperature switch is electrically connected to the circuit board and thermally coupled to the embedded chip, and the coefficient of thermal expansion of the first metal layer is different from that of the second metal layer, causing the temperature switch to deform in response to temperature changes in the embedded chip to contact or separate from the second electrical contact of the heat dissipation module.

[0006] In one embodiment of the present invention, the circuit board includes a substrate and a first add-on structure. The first add-on structure includes a dielectric layer, a heat dissipation layer, and a circuit layer. The dielectric layer is disposed on the substrate. The heat dissipation layer, the circuit layer, and the first metal layer of the temperature switch are stacked on the side of the dielectric layer away from the substrate. The bonding force between the first metal layer of the temperature switch and the dielectric layer is less than the bonding force between the circuit layer and the dielectric layer and the heat dissipation layer. An embedded chip is embedded in the substrate. A heat dissipation module is thermally coupled to the heat dissipation layer, and the first electrical contact of the heat dissipation module is electrically connected to the circuit layer.

[0007] In one embodiment of the present invention, the first added-layer structure further includes an interface bonding layer. The interface bonding layer is located between the heat dissipation layer and the dielectric layer, and between the circuit layer and the dielectric layer, but not between the temperature switch and the dielectric layer.

[0008] In one embodiment of the present invention, the temperature switch further includes at least one thermally conductive blind via structure. The at least one thermally conductive blind via structure is disposed on the dielectric layer and connected to the first metal layer.

[0009] In one embodiment of the present invention, the circuit board further includes a heat sink. The opposite sides of the heat sink are in thermal contact with the heat sink layer of the first added-layer structure and the heat sink module, respectively.

[0010] In one embodiment of the present invention, the circuit board further includes a heat sink. The heat sink penetrates the heat dissipation layer, the interface bonding layer, and the dielectric layer of the first add-on structure, and the opposite sides of the heat sink are in thermal contact with the embedded chip and the heat dissipation module, respectively.

[0011] In one embodiment of the present invention, the substrate includes an insulating portion, a first thermally conductive portion, and a conductive portion. The insulating portion has a groove. An embedded wafer is located in the groove. The first thermally conductive portion is located on one side of the groove and is in thermal contact with the embedded wafer. The conductive portion is disposed on the insulating portion, and the circuit layer, temperature switch, embedded wafer, and heat dissipation module are electrically connected to the conductive portion.

[0012] In one embodiment of the present invention, the above-mentioned at least one thermally conductive blind hole structure is connected to a portion of the conductive portion, and the portion of the conductive portion is in direct contact with the embedded wafer.

[0013] In one embodiment of the present invention, the at least one thermally conductive blind hole structure is connected to a portion of the conductive portion, and the portion of the conductive portion is separated from the embedded wafer.

[0014] In one embodiment of the present invention, the substrate further includes a second thermally conductive portion. The second thermally conductive portion is connected to the first thermally conductive portion, and the first thermally conductive portion and the second thermally conductive portion are respectively in thermal contact with opposite sides of the embedded wafer.

[0015] In one embodiment of the present invention, the circuit board further includes a heat sink. The heat sink penetrates the heat dissipation layer, dielectric layer, and interface bonding layer of the first add-on structure, and the opposite sides of the heat sink are in thermal contact with the first thermally conductive portion and the heat dissipation module, respectively.

[0016] In one embodiment of the present invention, the heat sink is separated from the temperature switch.

[0017] In one embodiment of the present invention, the first metal layer of the temperature switch is closer to the substrate than the second metal layer of the temperature switch, and the coefficient of thermal expansion of the first metal layer of the temperature switch is greater than the coefficient of thermal expansion of the second metal layer of the temperature switch.

[0018] In one embodiment of the present invention, the temperature switch further includes a third electrical contact. The third electrical contact protrudes from the side of the second metal layer away from the first metal layer. The temperature switch deforms due to temperature changes in the embedded chip, causing the third electrical contact of the temperature switch to contact or separate from the second electrical contact of the heat dissipation module.

[0019] In one embodiment of the present invention, the third electrical contact is cone-shaped or columnar.

[0020] Another embodiment of the present invention discloses a method for manufacturing a circuit board assembly, comprising providing a circuit board with an embedded chip, forming a temperature switch on one side of the circuit board, and disposing a heat dissipation module on one side of the circuit board. The temperature switch includes a first metal layer and a second metal layer stacked on top of each other. The first metal layer of the temperature switch is electrically connected to the circuit board and thermally coupled to the embedded chip, and the coefficient of thermal expansion of the first metal layer is different from that of the second metal layer. The heat dissipation module is thermally coupled to the embedded chip. A first electrical contact of the heat dissipation module is electrically connected to the circuit board. The temperature switch is located between a second electrical contact of the heat dissipation module and at least a portion of the circuit board.

[0021] In one embodiment of the present invention, the steps of providing a circuit board with an embedded wafer include: configuring the embedded wafer within a substrate of the circuit board; forming a dielectric layer on the substrate and defining a first region and a second region on the dielectric layer; performing an adhesion enhancement process on the first region of the dielectric layer; and providing a heat dissipation layer and a circuit layer on the first region of the dielectric layer. The step of forming a temperature switch on one side of the circuit board includes forming a temperature switch on the second region.

[0022] In one embodiment of the present invention, the above-described bonding enhancement process includes forming an interface adhesion layer in a first region of the dielectric layer.

[0023] In one embodiment of the present invention, the above-mentioned bonding strength enhancement process includes surface processing of a first region of the dielectric layer to increase the surface roughness of the first region.

[0024] In one embodiment of the present invention, the first metal layer of the temperature switch is closer to the substrate than the second metal layer of the temperature switch, and the coefficient of thermal expansion of the first metal layer of the temperature switch is greater than the coefficient of thermal expansion of the second metal layer of the temperature switch.

[0025] According to the circuit board assembly and manufacturing method disclosed in the above embodiments, since the coefficient of thermal expansion of the first metal layer is different from that of the second metal layer, and the first metal layer is thermally coupled to the embedded chip, the temperature switch deforms in response to the temperature change of the embedded chip to contact or separate from the second electrical contact of the heat dissipation module. Specifically, the temperature switch contacts the second electrical contact when the embedded chip is at a high temperature, thereby activating the heat dissipation module and dissipating heat from the embedded chip; and separates from the second electrical contact when the embedded chip is at a low temperature, thereby activating the heat dissipation module and stopping heat dissipation from the embedded chip. In this way, the heat dissipation module does not require an additional temperature sensor and a complex control system, and can be activated and deactivated solely based on the temperature change of the embedded chip, thereby achieving the effects of reducing costs, saving energy, and extending the service life of the heat dissipation module. Attached Figure Description

[0026] Figures 1 to 19 This is a cross-sectional schematic diagram of a method for manufacturing a circuit board assembly according to a first embodiment of the present invention.

[0027] Figure 20 for Figure 19 A partially enlarged cross-sectional view of the circuit board assembly.

[0028] Figure 21 For along Figure 20 The cross-sectional diagram of the third electrical junction is shown by the secant line 21-21 in the figure.

[0029] Figure 22 for Figure 19 A cross-sectional view of the second electrical contact of the heat dissipation module caused by the deformation of the temperature switch of the circuit board assembly.

[0030] Figure 23 This is a cross-sectional schematic diagram of a circuit board assembly according to a second embodiment of the present invention.

[0031] Figure 24 This is a cross-sectional schematic diagram of a circuit board assembly according to a third embodiment of the present invention.

[0032] Figure 25 This is a cross-sectional schematic diagram of a circuit board assembly according to a fourth embodiment of the present invention.

[0033] Figure 26 This is a cross-sectional view of a circuit board assembly according to a fifth embodiment of the present invention.

[0034] Figure 27This is a cross-sectional view of a circuit board assembly according to a sixth embodiment of the present invention.

[0035] Figure 28 This is a partially enlarged cross-sectional view of a circuit board assembly according to a seventh embodiment of the present invention.

[0036] Figure 29 This is a partially enlarged cross-sectional view of a circuit board assembly according to the eighth embodiment of the present invention.

[0037] Figure 30A This is a cross-sectional schematic diagram of a circuit board assembly according to a ninth embodiment of the present invention.

[0038] Figure 30B For along Figure 30A The cross-sectional diagram of the third electrical contact is shown by the secant lines 30B-30B.

[0039] Figure 31 This is a cross-sectional schematic diagram of a circuit board assembly according to the tenth embodiment of the present invention.

[0040] Figure 32 This is a cross-sectional schematic diagram of a circuit board assembly according to the eleventh embodiment of the present invention. Detailed Implementation

[0041] The following detailed description of the embodiments of the present invention outlines its features and advantages, sufficient to enable any person skilled in the art to understand the technical content of the embodiments and implement them accordingly. Based on the disclosure of this specification, the claims, and the accompanying drawings, any person skilled in the art can easily understand the related objectives and advantages of the present invention. The following embodiments further illustrate the viewpoints of the present invention in detail, but are not intended to limit the scope of the invention in any way.

[0042] The foregoing and other technical contents, features, and effects of the present invention will be clearly presented in the following detailed description of the various embodiments with reference to the accompanying drawings. The directional terms mentioned in the following embodiments, such as "up," "down," "front," "back," "left," and "right," are only for reference to the directions in the accompanying drawings. Therefore, the directional terms used are for illustrative purposes and not for limiting the present invention.

[0043] In the detailed descriptions of the various embodiments, terms such as "first," "second," and "third" can be used to describe different elements. These terms are only used to distinguish components or layers from each other, but in the structure, these components or layers should not be limited by these terms. For example, without departing from the scope of the inventive concept, a first component or layer can be referred to as a second component or layer, and similarly, a second component or layer can be referred to as a first component or layer. Furthermore, in the manufacturing method, the order in which these components or layers are formed should not be limited by these terms, except for specific process flows. For example, the first component or layer may be formed before the second component or layer. Or, the first component or layer may be formed after the second component or layer. Or, the first component or layer and the second component or layer may be formed in the same process or step.

[0044] Furthermore, the thickness of the layers and regions in the accompanying drawings will be enlarged for clarity. Identical or similar reference numerals denote identical or similar components, which will not be elaborated upon further in the following paragraphs.

[0045] Please see Figures 1 to 19 , Figures 1 to 19 This is a cross-sectional schematic diagram of a method for manufacturing a circuit board assembly according to a first embodiment of the present invention. Circuit board assembly 10 (e.g.) Figure 19 The manufacturing method shown includes the following steps.

[0046] like Figure 1 As shown, a substrate 20 is provided, and two conductive material layers 1130 are formed on opposite sides of the substrate 20. The substrate 20 includes a core layer 21, two conductive material layers 22, and two release layers 23. The two conductive material layers 22 are respectively stacked on opposite sides of the core layer 21. The two release layers 23 are respectively stacked on the side of the two conductive material layers 22 away from the core layer 21. The two conductive material layers 1130 are respectively stacked on the side of the two release layers 23 away from the core layer 21. In some embodiments, the core layer 21 may include a polymer glass fiber composite substrate, a glass substrate, a ceramic substrate, an insulating silicon substrate, or a polyimide (PI) glass fiber composite substrate. However, the invention is not limited to these, as long as the core layer 21 is suitable for carrying a film layer formed thereon or a component disposed thereon in subsequent processes. On the other hand, the conductive material layers 22 and the release layers 23 may be any suitable release material and conductive material.

[0047] like Figure 2 As shown, an insulating layer 1112 and a conductive material layer 1132 are sequentially formed on each of the two conductive material layers 1130.

[0048] like Figure 3 As shown, Figure 2 The conductive material layer 1132 is patterned into a circuit layer 1133.

[0049] like Figure 4 As shown, an insulating layer 1113 and a conductive material layer 1131 are sequentially formed on the circuit layer 1133 and the insulating layer 1112.

[0050] like Figure 5 As shown, substrate 20 is removed to form two circuit boards 11 and 12. Each of the two circuit boards 11 and 12 includes a conductive material layer 1130, an insulating layer 1112, a circuit layer 1133, an insulating layer 1113, and a conductive material layer 1131.

[0051] Since the subsequent processes of the two circuit boards 11 and 12 are the same or similar, the following only illustrates the subsequent steps performed on one of the circuit boards 11.

[0052] like Figure 6 As shown, the conductive material layer 1130 is patterned into a circuit layer 1134. The conductive material layer 1131 is patterned into a circuit layer 1135. A first thermally conductive portion 112 is formed on the insulating layer 1112. Circuit layers 1133, 1134, and 1135 can be collectively referred to as conductive portion 113. Insulating layers 1112 and 1113 can be collectively referred to as insulating portion 111. In this embodiment, conductive portion 113 is disposed on insulating portion 111. In other embodiments, it may also be disposed on... Figure 5 Before the steps shown for removing the substrate are performed, a conductive material layer is first formed, and then... Figure 6 The conductive material layer is patterned into circuit layers 1134 and 1135 as shown in the diagram.

[0053] like Figure 7 As shown, a groove 1111 is formed in the insulating portion 111. The substrate 110 includes the insulating portion 111, the first thermally conductive portion 112, and the conductive portion 113. The first thermally conductive portion 112 is located on one side of the groove 1111, and the groove 1111 exposes the upper surface 1121 of the first thermally conductive portion 112.

[0054] like Figure 8 As shown, an embedded wafer 200 is embedded in a groove 1111 of the substrate 110, that is, the embedded wafer 200 is disposed within the substrate 110. The embedded wafer 200 is in thermal contact with the upper surface 1121 of the first heat-conducting portion 112. In this invention, thermal contact refers to thermal coupling and direct contact. Thus, the fabrication of the substrate 110 is completed.

[0055] like Figure 9 As shown, a dielectric layer 121 and a conductive material layer 125 are sequentially formed on the circuit layer 1134 and the first heat-conducting portion 112 of the substrate 110, and a dielectric layer 131 and a conductive material layer 132 are sequentially formed on the circuit layer 1135. The dielectric layer 121 defines a first region 1212 and a second region 1213.

[0056] like Figure 10 As shown, a plurality of blind vias 126 are formed in the dielectric layer 121 and the conductive material layer 125, and a plurality of blind vias 133 are formed in the dielectric layer 131 and the conductive material layer 132. Some of the blind vias 126 expose the first heat-conducting portion 112, and the other blind vias 126 expose the circuit layer 1134. Some of the blind vias 133 expose a plurality of electrical contacts 201 of the embedded chip 200, and the other blind vias 133 expose the circuit layer 1135.

[0057] like Figure 11 As shown, remove Figure 10 The conductive material layer 125 is used. A mask 30 is placed over the conductive material layer 132. A mask 31 is placed over the second region 1213 of the dielectric layer 121. It should be noted that... Figure 11 The portion of the dielectric layer 121 that is not covered by the mask 31 and is exposed is the first region 1212.

[0058] like Figure 12 As shown, an adhesion enhancement process is performed on the first region 1212 of the dielectric layer 121. In this embodiment, the adhesion enhancement process includes forming an interface bonding layer 122 on the first region 1212 of the dielectric layer 121 and on the sidewall 1260 of the blind via 126 exposing the circuit layer 1134. In this embodiment, the interface bonding layer 122 is, for example, an adhesive or interface bonding agent.

[0059] like Figure 13 As shown, the process involves stripping to remove the mold after the molding, exposure, and electroplating. Figure 12 Masks 30 and 31 are included. A heat dissipation layer 123, a conductive material layer 1240, a first metal layer 410, a thermally conductive blind via structure 440, and a conductive blind via structure 350 are formed on the dielectric layer 121. A conductive blind via structure 351 and a conductive material layer 1340 are formed on the dielectric layer 131. The heat dissipation layer 123 and the conductive material layer 1240 are disposed on the first region 1212 via an interface bonding layer 122. The first metal layer 410 is located on the second region 1213 of the dielectric layer 121. The thermally conductive blind via structure 440 is located in a blind via 126 that exposes the first thermally conductive portion 112. The conductive blind via structure 350 is located in a blind via 126 that exposes the circuit layer 1134. The conductive blind via structure 351 is located in a blind via 133. The conductive material layer 1340 is located on the dielectric layer 131.

[0060] like Figure 14As shown, a mask 33 is applied over the conductive material layer 1340, and a mask 34 is applied over the heat dissipation layer 123 and the conductive material layer 1240, exposing the first metal layer 410. A second metal layer 420 is formed on the first metal layer 410. In this embodiment, the first metal layer 410 of the temperature switch 400 is closer to the substrate 110 than the second metal layer 420, and the coefficient of thermal expansion of the first metal layer 410 is greater than that of the second metal layer 420.

[0061] like Figure 15 As shown, remove Figure 14 The shields 33 and 34 are then applied, followed by shield 35 covering the conductive material layer 1340 and shield 36 covering the heat dissipation layer 123, the conductive material layer 1240, and a portion of the second metal layer 420. A third electrical contact 430 is formed on another portion of the second metal layer 420 exposed by shield 36. This forms a temperature switch 400 comprising a first metal layer 410, a second metal layer 420, a third electrical contact 430, and a thermally conductive blind hole structure 440. In this embodiment, the third electrical contact 430 protrudes from the side of the second metal layer 420 away from the first metal layer 410.

[0062] like Figure 16 As shown, remove Figure 15 The shielding layers 35 and 36, and partially conductive material layers 1240 and 1340 are used to form circuit layers 134 and 124, thereby forming a first add-on structure 120 and a second add-on structure 130. The first add-on structure 120 includes a dielectric layer 121, an interface bonding layer 122, a heat dissipation layer 123, a circuit layer 124, and a conductive blind via structure 350. The second add-on structure 130 includes a dielectric layer 131, a circuit layer 134, and a conductive blind via structure 351.

[0063] like Figure 17 As shown, a first insulating protective layer 500 and a second insulating protective layer 550 are formed. The first insulating protective layer 500 is located on the exposed portion of the dielectric layer 121, the exposed portion of the interface bonding layer 122, and a portion of the second metal layer 420. The second insulating protective layer 550 is located on the exposed portion of the dielectric layer 131.

[0064] like Figure 18 As shown, a heat sink 140 is formed on the heat dissipation layer 123. The heat sink 140 is separated from the temperature switch 400.

[0065] In this embodiment, Figures 1 to 13 and Figures 16 to 18 The steps of providing a circuit board 100 with an embedded chip 200 are presented. Figures 13 to 15The process of forming the temperature switch 400 on one side of the circuit board 100 is presented. In this embodiment, the detailed steps of providing the circuit board 100 with the embedded chip 200 are alternated with the detailed steps of forming the temperature switch 400 on one side of the circuit board 100, and some of the detailed steps of providing the circuit board 100 with the embedded chip 200 are performed simultaneously with some of the detailed steps of forming the temperature switch 400 on one side of the circuit board 100. However, the present invention is not limited thereto. In other embodiments, all the steps of providing the circuit board 100 with the embedded chip 200 may be completed first, and then all the steps of forming the temperature switch 400 on one side of the circuit board 100 may be completed.

[0066] In this embodiment, the circuit board 100 includes a substrate 110, a first layered structure 120, a second layered structure 130, a heat sink 140, a first insulating protective layer 500, and a second insulating protective layer 550.

[0067] In this embodiment, the temperature switch 400 includes a first metal layer 410, a second metal layer 420, a third conductive contact 430, and a thermally conductive blind via structure 440. The first metal layer 410 of the temperature switch 400 is electrically connected to the circuit board 100 and thermally coupled to the embedded chip 200. In this invention, thermal coupling refers to any heat transfer connection, such as a heat transfer connection achieved through heat conduction, heat convection, heat radiation, or any combination of the above three methods.

[0068] like Figure 19 As shown, a heat dissipation module 300 is disposed on one side of the circuit board 100. This completes the manufacturing method of the circuit board assembly 10. The circuit board assembly 10 includes the circuit board 100, an embedded chip 200, a heat dissipation module 300, and a temperature switch 400. The heat dissipation module 300 is in thermal contact with the heat sink 140 and is thermally coupled to the embedded chip 200 through the heat sink 140, the heat dissipation layer 123, the dielectric layer 121, and the first thermally conductive portion 112. The first electrical contact 310 of the heat dissipation module 300 is electrically connected to the circuit layer 124 of the first add-on structure 120 of the circuit board 100 via solder balls 301, such as solder balls. The temperature switch 400 is located between the second electrical contact 320 of the heat dissipation module 300 and a portion of the circuit board 100. In this embodiment, the opposite sides of the heat sink 140 are in thermal contact with the heat dissipation layer 123 of the first add-on structure 120 and the heat dissipation module 300, respectively. In this embodiment, the circuit layer 124, temperature switch 400, embedded chip 200 and heat dissipation module 300 are electrically connected to the conductive part 113.

[0069] This invention provides a circuit board assembly 10, which includes a circuit board 100, an embedded chip 200, a heat dissipation module 300, and a temperature switch 400. The embedded chip 200 is embedded and electrically connected to the circuit board 100. The heat dissipation module 300 is disposed on the circuit board 100 and has a first electrical contact 310 and a second electrical contact 320. The heat dissipation module 300 is thermally coupled to the embedded chip 200, and the first electrical contact 310 of the heat dissipation module 300 is electrically connected to the circuit board 100. The temperature switch 400 is located between at least a portion of the circuit board 100 and the second electrical contact 320. The temperature switch 400 includes a first metal layer 410 and a second metal layer 420 stacked on top of each other. The first metal layer 410 of the temperature switch 400 is electrically connected to the circuit board 100 and thermally coupled to the embedded chip 200. The coefficient of thermal expansion of the first metal layer 410 is different from that of the second metal layer 420, so that the temperature switch 400 is deformed by the temperature change of the embedded chip 200, so that the third electrical contact 430 of the temperature switch 400 contacts or separates from the second electrical contact 320 of the heat dissipation module 300.

[0070] In this embodiment, the circuit board 100 includes a substrate 110, a first layered structure 120, a second layered structure 130, a heat sink 140, a first insulating protective layer 500, and a second insulating protective layer 550. In this embodiment, the first thermally conductive portion 112 is electrically connected to the conductive portion 113. That is, the first thermally conductive portion 112 has both thermal conductivity and electrical conductivity functions. In this embodiment, the heat sink 140 is stacked on the side of the heat sink layer 123 away from the first layered structure 120.

[0071] In this embodiment, the first heat-conducting part 112 is located on the side of the insulating layer 1112 away from the insulating layer 1113, but this is not a limitation. In other embodiments, the first heat-conducting part may also be located between the two insulating layers of the insulating part.

[0072] In this embodiment, the heat sink 140 is separated from the temperature switch 400, thus providing two independent heat conduction paths between the embedded chip 200 and the heat dissipation module 300. This increases the heat transfer efficiency between the embedded chip 200 and the heat dissipation module 300 without affecting the deformation of the temperature switch 400 (i.e., the action of the temperature switch 400 to start or stop the heat dissipation module 300). However, the present invention is not limited thereto. In other embodiments, the heat sink may also contact a portion of the temperature switch.

[0073] In this embodiment, the first add-on structure 120 includes a heat dissipation layer 123, but is not limited thereto. In other embodiments, the first add-on structure may not need to include a heat dissipation layer, and the heat dissipation block may also be in thermal contact with the interface bonding layer.

[0074] In this embodiment, the temperature switch 400 includes a first metal layer 410, a second metal layer 420, a third electrical contact 430, and a thermally conductive blind via structure 440. In this embodiment, the thermally conductive blind via structure 440 is disposed on the dielectric layer 121 of the first add-on structure 120 and connected to the first metal layer 410. Specifically, in this embodiment, the thermally conductive blind via structure 440 is in thermal contact with the first metal layer 410. Furthermore, in this embodiment, the thermally conductive blind via structure 440 is in thermal contact with the first thermally conductive portion 112, which is in direct contact with the embedded wafer 200, and is electrically connected to the conductive portion 113 through the first thermally conductive portion 112. In this embodiment, the heat dissipation layer 123, the circuit layer 124, and the first metal layer 410 are stacked on the side of the dielectric layer 121 away from the substrate 110.

[0075] In this embodiment, the dielectric layer 121 has a surface 1211 on the side away from the substrate 110. The surface 1211 includes a first region 1212 and a second region 1213. Through the interface bonding layer 122 of the first add-on structure 120, the bonding force of the first metal layer 410 disposed on the second region 1213 of the dielectric layer 121 is less than the bonding force of the circuit layer 124 disposed on the first region 1212 of the dielectric layer 121 and the bonding force of the heat dissipation layer 123 disposed on the first region 1212 of the dielectric layer 121.

[0076] In this embodiment, the interface bonding layer 122 is disposed in the first region 1212. Therefore, the interface bonding layer 122 is located between the heat dissipation layer 123 and the dielectric layer 121, and between the circuit layer 124 and the dielectric layer 121, but not between the temperature switch 400 and the dielectric layer 121. That is, a portion of the interface bonding layer 122 is located between the heat dissipation layer 123 and the dielectric layer 121, and a portion of the interface bonding layer 122 is located between the circuit layer 124 and the dielectric layer 121, but no portion of the interface bonding layer 122 is located between the temperature switch 400 and the dielectric layer 121.

[0077] In this embodiment, the materials of insulating layers 1112, 1113 and dielectric layers 121, 131 can be resin or ceramic, such as prepreg. In some embodiments, insulating layers 1112, 1113 and dielectric layers 121, 131 can be formed, for example, by a lamination process using resin (such as epoxy resin or other similar thermosetting crosslinked resin), silane (such as hexamethyldisiloxane (HMDSN), tetraethoxysilane (TEOS), bis(dimethylamino)dimethylsilane (BDMADMS)) or other suitable dielectric materials, but the invention is not limited thereto.

[0078] In one embodiment, the embedded chip 200 can be adhesively attached to the recess 1111, thus avoiding the problem of cracking caused by aging of the intermetallic compound (IMC) when the embedded chip 200 is connected by solder, thereby effectively improving the yield and reliability of the circuit board assembly 10. The material of the adhesive layer is, for example, a photosensitive adhesive. However, the present invention is not limited to this, and the embedded chip 200 can also be disposed in the recess 1111 in other suitable ways.

[0079] Please see Figure 20 and Figure 21 , Figure 20 for Figure 19 A partially enlarged cross-sectional view of the circuit board assembly. Figure 21 For along Figure 20 The cross-sectional view of the third electrical contact is shown by facet lines 21-21. In this embodiment, as... Figure 20 As shown, the third electrical contact 430 is, for example, cylindrical in shape. Furthermore, as... Figure 21 As shown, the cross-sectional shape of the columnar third electrical contact 430 is rectangular. That is, in this embodiment, the shape of the third electrical contact 430 is, for example, a rectangular column.

[0080] The following describes how to control the start-up or shutdown of the heat dissipation module 300 via the temperature switch 400. Please refer to [link / reference needed]. Figure 22 , Figure 22 for Figure 19 A cross-sectional view of the second electrical contact of the heat dissipation module caused by the deformation of the temperature switch in the circuit board assembly. (See diagram below.) Figure 22As shown, when the temperature switch 400 receives heat from the embedded chip 200 and its temperature exceeds a critical temperature, the first metal layer 410 and the second metal layer 420 expand to different degrees, causing the temperature switch 400 to bend along direction A, so that the third electrical contact 430 contacts the second electrical contact 320 of the heat dissipation module 300. Furthermore, the first electrical contact 310 of the heat dissipation module 300 is electrically connected to the circuit layer 124 via solder balls 700. In this way, the heat dissipation module 300 is activated and heats the embedded chip 200 by being electrically connected to the conductive part 113 of the circuit board 100 via the first thermally conductive part 112. It should be noted that since the bonding force of the first metal layer 410 on the dielectric layer 121 is less than the bonding force of the circuit layer 124 on the dielectric layer 121 and the bonding force of the heat dissipation layer 123 on the dielectric layer 121, when the temperature switch 400 bends in direction A and causes part of the first metal layer 410 to detach from the dielectric layer 121, the circuit layer 124 and the heat dissipation layer 123 will still be firmly disposed on the dielectric layer 121, thereby improving the reliability of the circuit board assembly 10 according to the present invention.

[0081] like Figure 19 As shown, when the heat dissipation module 300 cools the embedded chip 200, causing the embedded chip 200 to cool down, the temperature of the temperature switch 400 also decreases. When the temperature of the temperature switch 400 is below the critical temperature, the first metal layer 410 and the second metal layer 420 contract to different degrees, causing the temperature switch 400 to reset and the third electrical contact 430 to separate from the second electrical contact 320 of the heat dissipation module 300. In this way, the heat dissipation module 300 will be de-energized from the conductive part 113 of the circuit board 100, shut down, and stop dissipating heat from the embedded chip 200.

[0082] At Figure 19 In the circuit board assembly 10 according to the first embodiment of the present invention, the thermally conductive blind via structure 440 is in thermal contact with the first thermally conductive portion 112 that is in direct contact with the embedded wafer 200, but the present invention is not limited thereto. Please refer to Figure 23 , Figure 23 This is a schematic cross-sectional view of a circuit board assembly according to a second embodiment of the present invention. It should be noted that the circuit board assembly 10A according to the second embodiment of the present invention is... Figure 19 The differences between the circuit board assemblies 10 according to the first embodiment of the present invention lie only in the location of the thermally conductive blind via structure 440. The circuit board assembly 10A according to the second embodiment of the present invention may also include... Figure 19 The circuit board 100, embedded chip 200, and heat dissipation module 300 according to the first embodiment of the present invention are described herein, and can be referenced. Figure 19The description of the temperature switch 400 in the second embodiment of the present invention will help to understand other features of the temperature switch 400A. Specifically, in this embodiment, the circuit board 100 includes a substrate 110, a first layered structure 120, a second layered structure 130, and a heat sink 140. The substrate 110 includes an insulating portion 111, a first thermally conductive portion 112, and a conductive portion 113. The insulating portion 111 includes insulating layers 1112 and 1113 and has a groove 1111. The conductive portion 113 includes circuit layers 1133, 1134, and 1135. The first layered structure 120 includes a dielectric layer 121, an interface bonding layer 122, a heat dissipation layer 123, and a circuit layer 124. The heat dissipation module 300 includes a second electrical contact 320 and a first electrical contact 310 electrically connected to the circuit layer 124 via solder balls 700. The temperature switch 400A includes a first metal layer 410, a second metal layer 420, a third electrical contact 430, and a thermally conductive blind via structure 440A. The following only details the location of the thermally conductive blind via structure 440A, without repeating other similar details. In this embodiment, the thermally conductive blind via structure 440A is connected to a portion of the conductive part 113 (i.e., a portion of the circuit layer 1134), and this portion of the conductive part 113 is separated from the embedded wafer 200. Furthermore, the portion of the conductive part 113 (i.e., a portion of the circuit layer 1134) is in thermal contact with the thermally conductive blind via structure 440A and is separated from the embedded wafer 200. In this way, the portion of the circuit layer 1134 in thermal contact with the thermally conductive blind via structure 440A transfers heat to the first thermally conductive part 112 through the dielectric layer 121, which has a lower thermal conductivity than the first thermally conductive part 112, and then to the embedded wafer 200. Therefore, the heat transfer efficiency between the temperature switch 400B and the chip 200 will be reduced, thereby reducing the sensitivity of the heat dissipation module 300 in starting and stopping.

[0083] At Figure 19 In the circuit board assembly 10 according to the first embodiment of the present invention, the thermally conductive blind via structure 440 is in thermal contact with the first thermally conductive portion 112 that is in direct contact with the embedded wafer 200, and the conductive portion 113 (line layer 1134) is separated from the embedded wafer 200, but the present invention is not limited thereto. Please refer to Figure 24 , Figure 24 This is a schematic cross-sectional view of a circuit board assembly according to a third embodiment of the present invention. It should be noted that the circuit board assembly 10B according to the third embodiment of the present invention is... Figure 19 The differences between the circuit board assemblies 10 according to the first embodiment of the present invention lie only in the placement positions of the thermally conductive blind via structure 440B, the conductive portion 113B (line layer 1134B), and the first thermally conductive portion 112B. The circuit board assembly 10B according to the third embodiment of the present invention may also include... Figure 19 The embedded chip 200 and heat dissipation module 300 according to the first embodiment of the present invention are described, and can be referred to as well. Figure 19The descriptions of the temperature switch 400B and circuit board 100B according to the third embodiment of the present invention will help you understand other features of the temperature switch 400B and circuit board 100B. In this embodiment, the circuit board 100B includes a substrate 110B, a first layered structure 120, a second layered structure 130, and a heat sink 140. The substrate 110B includes an insulating portion 111, a first thermally conductive portion 112B, and a conductive portion 113B. The insulating portion 111 includes insulating layers 1112 and 1113 and has a groove 1111. The conductive portion 113B includes circuit layers 1133, 1134B, and 1135. The first layered structure 120 includes a dielectric layer 121, an interface bonding layer 122, a heat dissipation layer 123, and a circuit layer 124. The heat dissipation module 300 includes a second electrical contact 320 and a first electrical contact 310 electrically connected to the circuit layer 124 via solder balls 700. The temperature switch 400B includes a first metal layer 410, a second metal layer 420, a third electrical contact 430, and a thermally conductive blind via structure 440B. The following only details the locations of the thermally conductive blind via structure 440B, the conductive portion 113B (circuit layer 1134B), and the first thermally conductive portion 112B; other similar details will not be repeated. In this embodiment, the thermally conductive blind via structure 440B is separated from the first thermally conductive portion 112B. In this embodiment, the thermally conductive blind via structure 440B is connected to a portion of the conductive portion 113B (a portion of the circuit layer 1134B), and a portion of the conductive portion 113B directly contacts the embedded wafer 200. Furthermore, a portion of the conductive part 113B (a portion of the circuit layer 1134B) is in thermal contact with the thermally conductive blind via structure 440B and directly in contact with the embedded chip 200, thereby improving the heat transfer efficiency between the temperature switch 400B and the chip 200, and thus making the start-up and shutdown of the heat dissipation module 300 more sensitive.

[0084] The heat sink is not limited to being stacked on the side of the heat sink layer away from the first add-on structure. Please refer to [link / reference]. Figure 25 , Figure 25 This is a schematic cross-sectional view of a circuit board assembly according to a fourth embodiment of the present invention. It should be noted that the circuit board assembly 10C according to the fourth embodiment of the present invention is... Figure 24 The difference between the circuit board assemblies 10B according to the third embodiment of the present invention lies only in the location of the heat sink. The circuit board assembly 10C according to the fourth embodiment of the present invention may also include... Figure 19 The embedded chip 200 and heat dissipation module 300 according to the first embodiment of the present invention and Figure 24 The temperature switch 400B according to the third embodiment of the present invention is described above, and may be referred to in the following text. Figure 19 Circuit board 100 and Figure 24The description of the circuit board 100B in the text helps to understand other features of the circuit board 100C according to the fourth embodiment of the present invention. In this embodiment, the circuit board 100C includes a substrate 110B, a first layered structure 120, a second layered structure 130, and a heat sink 140C. The substrate 110B includes an insulating portion 111, a first thermally conductive portion 112B, and a conductive portion 113B. The insulating portion 111 includes insulating layers 1112 and 1113 and has a groove 1111. The conductive portion 113B includes circuit layers 1133, 1134B, and 1135. The first layered structure 120 includes a dielectric layer 121, an interface bonding layer 122, a heat dissipation layer 123, and a circuit layer 124. The heat dissipation module 300 includes a second electrical contact 320 and a first electrical contact 310 electrically connected to the circuit layer 124 via solder balls 700. The temperature switch 400B includes a first metal layer 410, a second metal layer 420, a third electrical contact 430, and a thermally conductive blind via structure 440B. The following only details the location of the heat sink 140C, without repeating other similar details. In this embodiment, the heat sink 140C penetrates the heat dissipation layer 123, the interface bonding layer 122, and the dielectric layer 121 of the first add-on structure 120, and the opposite sides of the heat sink 140C are in thermal contact with the first thermally conductive portion 112 and the heat dissipation module 300, thereby improving the heat transfer efficiency between the embedded chip 200 and the heat dissipation module 300. Furthermore, in this embodiment, the heat sink 140C is separated from the temperature switch 400B, so that the heat sink 140C and the temperature switch 400B provide two independent heat conduction paths between the embedded chip 200 and the heat dissipation module 300. This can increase the heat transfer efficiency between the embedded chip 200 and the heat dissipation module 300 without affecting the deformation degree of the temperature switch 400B (i.e., the action of the temperature switch 400B to start or stop the heat dissipation module 300).

[0085] Alternatively, please see Figure 26 , Figure 26 This is a schematic cross-sectional view of a circuit board assembly according to a fifth embodiment of the present invention. It should be noted that the circuit board assembly 10D according to the fifth embodiment of the present invention is... Figure 24 The difference between the circuit board assemblies 10B according to the third embodiment of the present invention lies only in the location of the heat sink. The circuit board assembly 10D according to the fifth embodiment of the present invention may also include... Figure 19 The embedded chip 200 and heat dissipation module 300 according to the first embodiment of the present invention and Figure 24 The temperature switch 400B according to the third embodiment of the present invention is described above, and may be referred to in the following text. Figure 19 Circuit board 100 and Figure 24The description of the circuit board 100B in the text helps to understand other features of the circuit board 100D according to the fourth embodiment of the present invention. In this embodiment, the circuit board 100D includes a substrate 110D, a first add-in structure 120, a second add-in structure 130, and a heat sink 140D. The substrate 110D includes an insulating portion 111 and a conductive portion 113B. The insulating portion 111 includes insulating layers 1112 and 1113 and has a groove 1111. The conductive portion 113B includes circuit layers 1133, 1134B, and 1135. The first add-in structure 120 includes a dielectric layer 121, an interface bonding layer 122, a heat dissipation layer 123, and a circuit layer 124. The heat dissipation module 300 includes a second electrical contact 320 and a first electrical contact 310 electrically connected to the circuit layer 124 via solder balls 700. The temperature switch 400B includes a first metal layer 410, a second metal layer 420, a third electrical contact 430, and a thermally conductive blind via structure 440B. The following only details the location of the heat sink 140D; other similar details will not be repeated. In this embodiment, the substrate 110D of the circuit board 100D does not include... Figure 19 The first heat-conducting part 112 in the first heat-conducting part 112, the heat sink 140D penetrates the heat sink layer 123, the interface bonding layer 122 and the dielectric layer 121 of the first layered structure 120, and the opposite sides of the heat sink 140D are in thermal contact with the embedded chip 200 and the heat sink module 300 respectively.

[0086] Please see Figure 27 , Figure 27 This is a schematic cross-sectional view of a circuit board assembly according to a sixth embodiment of the present invention. It should be noted that the circuit board assembly 10E according to the sixth embodiment of the present invention is... Figure 25 The difference between the circuit board assemblies 10C according to the fourth embodiment of the present invention lies only in that the substrate 110E of the circuit board assembly 10E according to the sixth embodiment of the present invention further includes a second heat-conducting portion 114E. The circuit board assembly 10E according to the sixth embodiment of the present invention may also include... Figure 19 The embedded chip 200 and heat dissipation module 300 according to the first embodiment of the present invention Figure 24 Temperature switch 400B according to the third embodiment of the present invention Figure 25 The circuit board 100C according to the sixth embodiment of the present invention, and may be referred to Figure 19 Circuit board 100 and Figure 25The description of the circuit board 100C in the text helps to understand other features of the circuit board 100E according to the sixth embodiment of the present invention. In this embodiment, the circuit board 100E includes a substrate 110E, a first layering structure 120, a second layering structure 130, and a heat sink 140. The substrate 110E includes an insulating portion 111, a first thermally conductive portion 112B, a conductive portion 113B, and a second thermally conductive portion 114E. The insulating portion 111 includes insulating layers 1112 and 1113 and has a groove 1111. The conductive portion 113B includes circuit layers 1133, 1134B, and 1135. The first layering structure 120 includes a dielectric layer 121, an interface bonding layer 122, a heat dissipation layer 123, and a circuit layer 124. The heat dissipation module 300 includes a second electrical contact 320 and a first electrical contact 310 electrically connected to the circuit layer 124 via solder balls 700. The temperature switch 400B includes a first metal layer 410, a second metal layer 420, a third electrical contact 430, and a thermally conductive blind via structure 440B. Only the second thermally conductive part 114E will be described in detail below; other similar details will not be repeated. In this embodiment, the second thermally conductive part 114E is connected to the first thermally conductive part 112, specifically, it is in thermal contact with the first thermally conductive part 112. Furthermore, the first thermally conductive part 112 and the second thermally conductive part 114E are in thermal contact with opposite sides of the embedded chip 200, thereby increasing the thermal contact area between the circuit board 100E and the embedded chip 200, and thus enabling more efficient heat transfer from the embedded chip 200 to the first thermally conductive part 112 and the second thermally conductive part 114E.

[0087] The temperature switch according to the present invention is not limited to including a third electrical contact. See also... Figure 28 , Figure 28 This is a partially enlarged cross-sectional view of a circuit board assembly according to a seventh embodiment of the present invention. It should be noted that the circuit board assembly 10F according to the seventh embodiment of the present invention is... Figure 19 The only difference between the circuit board assemblies 10 according to the first embodiment of the present invention is that the temperature switch 400F according to the seventh embodiment of the present invention does not include Figure 19 The third electrical contact 430. The circuit board assembly 10F according to the seventh embodiment of the present invention may also include... Figure 19 The circuit board 100, embedded chip 200, and heat dissipation module 300 according to the first embodiment of the present invention are described herein, and can be referenced. Figure 19 The description of the temperature switch 400F according to the seventh embodiment of the present invention will help you understand other features of the temperature switch 400F. In this embodiment, the circuit board 100 includes a circuit layer 1134 and a first heat-conducting portion 112. The heat dissipation module 300 includes a second electrical contact 320. The temperature switch 400F includes a first metal layer 410, a second metal layer 420, and a heat-conducting blind via structure 440. The following only details the temperature switch 400F without... Figure 19The third electrical contact 430 and related contents are not described in detail here, nor are other similar contents. In this embodiment, the temperature switch 400F does not include... Figure 19 The third electrical contact 430 in the heat dissipation module 300. In addition, in this embodiment, the side of the second metal layer 420 away from the first metal layer 410 is used to contact or separate from the second electrical contact 320 of the heat dissipation module 300.

[0088] The shape of the third electrical contact of the temperature switch according to the present invention is not limited to being cylindrical. Please refer to... Figure 29 , Figure 29 This is a partially enlarged cross-sectional view of a circuit board assembly according to the eighth embodiment of the present invention. It should be noted that the circuit board assembly 10G according to the eighth embodiment of the present invention is... Figure 19 The only difference between the circuit board assemblies 10 according to the first embodiment of the present invention is the shape of the third electrical contact 430 of the temperature switch 400. The circuit board assembly 10G according to the eighth embodiment of the present invention may also include... Figure 19 The circuit board 100, embedded chip 200, and heat dissipation module 300 according to the first embodiment of the present invention are described herein, and can be referenced. Figure 19 The description of the temperature switch 400G according to the eighth embodiment of the present invention will help you understand other features of the temperature switch 400G. In this embodiment, the circuit board 100 includes a circuit layer 1134 and a first heat-conducting portion 112. The heat dissipation module 300 includes a second electrical contact 320. The temperature switch 400G includes a first metal layer 410, a second metal layer 420, a third electrical contact 430G, and a heat-conducting blind via structure 440. The following only describes the shape of the third electrical contact 430G of the temperature switch 400G in detail, and other similar contents will not be repeated. In this embodiment, the shape of the third electrical contact 430G of the temperature switch 400G is, for example, conical.

[0089] The cross-sectional shape of the columnar third electrical contact of the temperature switch according to the present invention is not limited to rectangular. See also... Figure 30A and Figure 30B , Figure 30A This is a cross-sectional schematic diagram of a circuit board assembly according to the ninth embodiment of the present invention. Figure 30B For along Figure 30A The cross-sectional view of the third electrical contact is shown by cut lines 30B-30B. It should be noted that the circuit board assembly 10H according to the ninth embodiment of the present invention... Figure 19 The only difference between the circuit board assemblies 10 according to the first embodiment of the present invention is the cross-sectional shape of the columnar third electrical contact 430 of the temperature switch 400. The circuit board assembly 10H according to the ninth embodiment of the present invention may also include... Figure 19 The circuit board 100, embedded chip 200, and heat dissipation module 300 according to the first embodiment of the present invention are described herein, and can be referenced. Figure 19 The description of the temperature switch 400 according to the ninth embodiment of the present invention will help to understand other features of the temperature switch 400H. In this embodiment, the circuit board 100 includes a circuit layer 1134 and a first heat-conducting portion 112. The heat dissipation module 300 includes a second electrical contact 320. The temperature switch 400H includes a first metal layer 410, a second metal layer 420, a third electrical contact 430H, and a heat-conducting blind via structure 440. The following only describes in detail the cross-sectional shape of the columnar third electrical contact 430H of the temperature switch 400H, and will not repeat other similar contents. In this embodiment, the cross-sectional shape of the columnar third electrical contact 430H of the temperature switch 400H is, for example, circular. That is, in this embodiment, the shape of the third electrical contact 430H is cylindrical.

[0090] Please see Figure 31 , Figure 31 This is a schematic cross-sectional view of a circuit board assembly according to the tenth embodiment of the present invention. It should be noted that the circuit board assembly 10I according to the tenth embodiment of the present invention is... Figure 19 The difference between the circuit board assemblies 10 according to the first embodiment of the present invention is that the circuit board assembly 10I according to the tenth embodiment of the present invention further includes an external chip 600I. The circuit board assembly 10I according to the tenth embodiment of the present invention may also include Figure 19 According to a first embodiment of the present invention, a circuit board 100, an embedded chip 200, a heat dissipation module 300, and a temperature switch 400 are disclosed. In this embodiment, the circuit board 100 includes a substrate 110, a first layered structure 120, a second layered structure 130, and a heat sink 140. The substrate 110 includes an insulating portion 111, a first thermally conductive portion 112, and a conductive portion 113. The insulating portion 111 includes insulating layers 1112 and 1113 and has a groove 1111. The conductive portion 113 includes circuit layers 1133, 1134, and 1135. The first layered structure 120 includes a dielectric layer 121, an interface bonding layer 122, a heat dissipation layer 123, and a circuit layer 124. The heat dissipation module 300 includes a second electrical contact 320 and a first electrical contact 310 electrically connected to the circuit layer 124 via solder balls 700. The temperature switch 400 includes a first metal layer 410, a second metal layer 420, a third electrical contact 430, and a thermally conductive blind via structure 440. The following only describes the external chip 600I in detail, without repeating other similar details. In this embodiment, the external chip 600I is disposed on the side of the second add-on structure 130 away from the substrate 110. Furthermore, in this embodiment, the external chip 600I includes a plurality of solder balls 601I, such as solder balls, and the external chip 600I is electrically connected to the circuit layer 134 of the second add-on structure 130 through these solder balls 601I.

[0091] Please refer to it again. Figure 12 and Figure 19In the first embodiment, the bonding strength enhancement process includes forming an interface bonding layer 122 on a first region 1212 of the dielectric layer 121, so that the bonding strength of the first metal layer 410 on the dielectric layer 121 is less than the bonding strength of the circuit layer 124 on the dielectric layer 121 and the bonding strength of the heat dissipation layer 123 on the dielectric layer 121. However, the present invention is not limited to increasing bonding strength by forming an interface bonding layer 122. In other embodiments, the bonding strength enhancement process may also include surface processing on the first region of the dielectric layer to increase the surface roughness of the first region, thereby making the bonding strength of the first metal layer on the dielectric layer less than the bonding strength of the circuit layer on the dielectric layer and the bonding strength of the heat dissipation layer on the dielectric layer. For example, in addition to... Figure 12 Except for the step of setting the interface after layer 122, which replaces the step of surface processing in the first region of the dielectric layer, all other steps are performed in the same or similar manner. Figures 1 to 19 The method for manufacturing a circuit board assembly according to the first embodiment of the present invention will yield... Figure 32 Circuit board assembly 10J. Please refer to [link / reference]. Figure 32 , Figure 32 This is a schematic cross-sectional view of a circuit board assembly according to the eleventh embodiment of the present invention. It should be noted that the circuit board assembly 10J according to the eleventh embodiment of the present invention is... Figure 19 The only difference between the circuit board assemblies 10 according to the first embodiment of the present invention is that the first add-on structure 120J according to the eleventh embodiment of the present invention does not include Figure 19 The interface bonding layer 122 is included. The circuit board assembly 10J according to the eleventh embodiment of the present invention may also include... Figure 19 The embedded chip 200, heat dissipation module 300, and temperature switch 400 according to the first embodiment of the present invention are described herein, and can be referred to as well. Figure 19 The description of the circuit board 100 in the text will help you understand other features of the circuit board 100J according to the eleventh embodiment of the present invention. In this embodiment, the circuit board 100 includes a substrate 110, a first layered structure 120J, a second layered structure 130, and a heat sink 140. The substrate 110 includes an insulating portion 111, a first thermally conductive portion 112, and a conductive portion 113. The insulating portion 111 includes insulating layers 1112 and 1113 and has a groove 1111. The conductive portion 113 includes circuit layers 1133, 1134, and 1135. The first layered structure 120J includes a dielectric layer 121J, a heat sink layer 123, and a circuit layer 124. The heat sink module 300 includes a second electrical contact 320 and a first electrical contact 310 electrically connected to the circuit layer 124 via solder balls 700. Temperature switch 400 includes a first metal layer 410, a second metal layer 420, a third electrical contact 430, and a thermally conductive blind via structure 440. The following only details the first layer structure of circuit board 100J; 120J does not include this layer. Figure 19The interface connecting layer 122 and related content are not described in detail here. Other similar content will not be repeated. In this embodiment, the first add-on structure 120J of the circuit board 100J does not include... Figure 19 The interface bonding layer 122 is used. Furthermore, in this embodiment, the surface roughness of the first region 1212J of the dielectric layer 121J is greater than the surface roughness of the second region 1213J of the dielectric layer 121J, resulting in the bonding force of the first metal layer 410 disposed on the second region 1213J of the dielectric layer 121J being less than the bonding force of the circuit layer 124 disposed on the first region 1212J of the dielectric layer 121J and the bonding force of the heat dissipation layer 123 disposed on the first region 1212J of the dielectric layer 121J.

[0092] According to the circuit board assembly and manufacturing method disclosed in the above embodiments, since the coefficient of thermal expansion of the first metal layer is different from that of the second metal layer, and the first metal layer is thermally coupled to the embedded chip, the temperature switch deforms in response to the temperature change of the embedded chip to contact or separate from the second electrical contact of the heat dissipation module. Specifically, the temperature switch contacts the second electrical contact when the embedded chip is at a high temperature, thereby activating the heat dissipation module and dissipating heat from the embedded chip; and separates from the second electrical contact when the embedded chip is at a low temperature, thereby activating the heat dissipation module and stopping heat dissipation from the embedded chip. In this way, the heat dissipation module does not require an additional temperature sensor and a complex control system, and can be activated and deactivated solely based on the temperature change of the embedded chip, thereby achieving the effects of reducing costs, saving energy, and extending the service life of the heat dissipation module.

[0093] [Symbol Explanation]

[0094] 10, 10A, 10B, 10C, 10D, 10E, 10F, 10G, 10H, 10I, 10J: Circuit board assemblies

[0095] 11, 12: Circuit board

[0096] 100, 100B, 100C, 100D, 100J: Circuit boards

[0097] 110,110D,110E:Substrate

[0098] 111: Insulation section

[0099] 1111: Groove

[0100] 1112, 1113: Insulation layer

[0101] 112, 112B: First heat-conducting part

[0102] 1121: Upper surface

[0103] 113, 113B: Conductive parts

[0104] 1130, 1131, 1132: Conductive material layers

[0105] 1133, 1134, 1134B, 1135: Line layer

[0106] 114E: Second heat-conducting part

[0107] 120,120J: First layered structure

[0108] 121,121J: Dielectric layer

[0109] 1211: Set Surface

[0110] 1212,1212J: First region

[0111] 1213, 1213J: Second region

[0112] 122: Interface Adhesion Layer

[0113] 123: Heat dissipation layer

[0114] 124: Line Layer

[0115] 125: Conductive material layer

[0116] 1240: Conductive material layer

[0117] 126: Blind hole

[0118] 1260: Sidewall

[0119] 130: Second layered structure

[0120] 131: Dielectric layer

[0121] 132: Conductive material layer

[0122] 133: Blind Hole

[0123] 134: Line Layer

[0124] 1340: Conductive material layer

[0125] 140, 140C, 140D: Heatsink

[0126] 200: Embedded chip

[0127] 201: Electrical contacts

[0128] 300: Heat dissipation module

[0129] 301: Solder ball

[0130] 310: First electrical contact

[0131] 320: Second electrical contact

[0132] 350, 351: Conductive blind via structure

[0133] 400, 400A, 400B, 400F, 400G, 400H: Temperature switches

[0134] 410: First metal layer

[0135] 420: Second metal layer

[0136] 430, 430G, 430H: Third electrical contact

[0137] 440, 440A, 440B: Thermally conductive blind hole structure

[0138] 500: First insulating protective layer

[0139] 550: Second insulating protective layer

[0140] 600I: External chip

[0141] 601I: Solder Ball

[0142] 20: Base

[0143] 21: Core Layer

[0144] 22: Conductive material layer

[0145] 23: Release layer

[0146] 30,31,33,34,35,36: Masking

[0147] A: Direction.

Claims

1. A circuit board assembly, comprising: Circuit board; An embedded chip is embedded and electrically connected to the circuit board; A heat dissipation module, disposed on the circuit board, having a first electrical contact and a second electrical contact, thermally coupled to the embedded chip, and the first electrical contact of the heat dissipation module electrically connected to the circuit board; and A temperature switch is located between at least a portion of the circuit board and the second electrical contact. The temperature switch includes a first metal layer and a second metal layer stacked on top of each other. The first metal layer of the temperature switch is electrically connected to the circuit board and thermally coupled to the embedded chip. The coefficient of thermal expansion of the first metal layer is different from that of the second metal layer, so that the temperature switch deforms in response to temperature changes of the embedded chip to contact or separate from the second electrical contact of the heat dissipation module.

2. The circuit board assembly according to claim 1, wherein the circuit board includes a substrate and a first add-on structure, the first add-on structure including a dielectric layer, a heat dissipation layer and a circuit layer, the dielectric layer is disposed on the substrate, the heat dissipation layer, the circuit layer and the first metal layer of the temperature switch are stacked on the side of the dielectric layer away from the substrate, the bonding force of the first metal layer of the temperature switch disposed on the dielectric layer is less than the bonding force of the circuit layer disposed on the dielectric layer and the bonding force of the heat dissipation layer disposed on the dielectric layer, the embedded chip is embedded in the substrate, the heat dissipation module is thermally coupled to the heat dissipation layer, and the first electrical contact of the heat dissipation module is electrically connected to the circuit layer.

3. The circuit board assembly of claim 2, wherein the first add-on structure further comprises an interface bonding layer, the interface bonding layer being located between the heat dissipation layer and the dielectric layer, and between the circuit layer and the dielectric layer, but not between the temperature switch and the dielectric layer.

4. The circuit board assembly of claim 3, wherein the temperature switch further comprises at least one thermally conductive blind via structure disposed on the dielectric layer and connected to the first metal layer.

5. The circuit board assembly according to claim 3, wherein the circuit board further comprises a heat sink, the opposite sides of which are in thermal contact with the heat sink layer and the heat sink module of the first added-layer structure, respectively.

6. The circuit board assembly of claim 3, wherein the circuit board further includes a heat sink penetrating the heat dissipation layer, the interface bonding layer and the dielectric layer of the first add-on structure, and the opposite sides of the heat sink are in thermal contact with the embedded chip and the heat dissipation module, respectively.

7. The circuit board assembly according to claim 4, wherein the substrate includes an insulating portion, a first thermally conductive portion and a conductive portion, the insulating portion having a groove, the embedded chip being located in the groove, the first thermally conductive portion being located on one side of the groove and in thermal contact with the embedded chip, the conductive portion being disposed in the insulating portion, and the circuit layer, the temperature switch, the embedded chip and the heat dissipation module being electrically connected to the conductive portion.

8. The circuit board assembly of claim 7, wherein the at least one thermally conductive blind via structure is connected to a portion of the conductive portion, and the portion of the conductive portion is in direct contact with the embedded wafer.

9. The circuit board assembly of claim 7, wherein the at least one thermally conductive blind via structure is connected to a portion of the conductive portion, and the portion of the conductive portion is separated from the embedded wafer.

10. The circuit board assembly of claim 7, wherein the substrate further includes a second thermally conductive portion connected to the first thermally conductive portion, and the first thermally conductive portion and the second thermally conductive portion are respectively in thermal contact with opposite sides of the embedded wafer.

11. The circuit board assembly of claim 7, wherein the circuit board further includes a heat sink penetrating the heat dissipation layer, the dielectric layer and the interface bonding layer of the first added-layer structure, and the opposite sides of the heat sink are in thermal contact with the first thermally conductive portion and the heat dissipation module, respectively.

12. The circuit board assembly according to claim 5, 6 or 11, wherein the heat sink is detached from the temperature switch.

13. The circuit board assembly of claim 2, wherein the first metal layer of the temperature switch is closer to the substrate than the second metal layer of the temperature switch, and the coefficient of thermal expansion of the first metal layer of the temperature switch is greater than the coefficient of thermal expansion of the second metal layer of the temperature switch.

14. The circuit board assembly of claim 1, wherein the temperature switch further includes a third electrical contact protruding from the second metal layer on the side away from the first metal layer, and the temperature switch is deformed by temperature changes of the embedded chip so that the third electrical contact of the temperature switch contacts or separates from the second electrical contact of the heat dissipation module.

15. The circuit board assembly of claim 14, wherein the third electrical contact is cone-shaped or columnar.

16. A method for manufacturing a circuit board assembly, comprising: Provide circuit boards with embedded chips; A temperature switch is formed on one side of the circuit board. The temperature switch includes a first metal layer and a second metal layer stacked on top of each other. The first metal layer of the temperature switch is electrically connected to the circuit board and thermally coupled to the embedded chip, and the coefficient of thermal expansion of the first metal layer is different from that of the second metal layer. A heat dissipation module is disposed on one side of the circuit board. The heat dissipation module is thermally coupled to the embedded chip. The first electrical contact of the heat dissipation module is electrically connected to the circuit board. The temperature switch is located between the second electrical contact of the heat dissipation module and at least a portion of the circuit board.

17. The method of manufacturing a circuit board assembly according to claim 16, wherein the step of providing the circuit board with the embedded wafer includes: An embedded chip is configured within the substrate of the circuit board; A dielectric layer is formed on the substrate, and the dielectric layer is defined to have a first region and a second region; A bonding strength enhancement process is performed in the first region of the dielectric layer; and A heat dissipation layer and a circuit layer are disposed in the first region of the dielectric layer; in, The steps for forming this temperature switch on one side of the circuit board include: This temperature setting is established in the second region.

18. The method of manufacturing a circuit board assembly according to claim 17, wherein the bonding strength enhancement process comprises: An interface bonding layer is formed in the first region of the dielectric layer.

19. The method of manufacturing a circuit board assembly according to claim 17, wherein the bonding strength enhancement process comprises: Surface processing is performed on the first region of the dielectric layer to increase the surface roughness of the first region.

20. The method of manufacturing a circuit board assembly according to claim 17, wherein the first metal layer of the temperature switch is closer to the substrate than the second metal layer of the temperature switch, and the coefficient of thermal expansion of the first metal layer of the temperature switch is greater than the coefficient of thermal expansion of the second metal layer of the temperature switch.

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