Perovskite solar cell and preparation method thereof, and photovoltaic module

Abstract

The application discloses a perovskite solar cell and a preparation method and a photovoltaic module thereof. The perovskite solar cell comprises a substrate with a surface of a rough structure, the rough structure having valley tips and valley bottoms; a perovskite layer, the perovskite layer comprising a perovskite quantum dot layer and a two-dimensional-three-dimensional perovskite layer, the perovskite quantum dot layer comprising perovskite quantum dots and ligands distributed on surfaces of the perovskite quantum dots, the ligands being one or a combination of L-type ligands, S-type ligands and Z-type ligands, the L-type ligands comprising Lewis bases, the S-type ligands comprising one or more of ammonium salts, free radicals or zwitterion molecules, and the Z-type ligands comprising Lewis acids, the two-dimensional-three-dimensional perovskite layer comprising a two-dimensional perovskite layer and a three-dimensional perovskite layer, the two-dimensional perovskite layer being obtained by reacting a lead halide skeleton layer with a cation solution, and the three-dimensional perovskite layer being obtained by reacting the lead halide skeleton layer with the cation solution. The perovskite layer has a three-dimensional-two-dimensional-three-dimensional structure and has the advantages of high stability and low lead iodide residue.

Description

Technical Field

[0001] This invention relates to the field of solar cells, and more particularly to a perovskite solar cell, its preparation method, and a photovoltaic module. Background Technology

[0002] The perovskite layer is an important component of perovskite solar cells. Currently, the perovskite layer produced in industrial perovskite solar cells is mainly prepared by vapor deposition-solution method. That is, a lead halide framework layer is first vapor deposited on a substrate with a textured surface, and then a cationic solution is coated on the lead halide framework layer. The cationic solution diffuses into the lead halide framework layer to react and form perovskite.

[0003] However, the high density of the vapor-deposited lead halide framework layer makes it difficult for the cation solution to diffuse to the valleys of the pyramid substrate, leading to incomplete lead iodide reaction at the valleys. Furthermore, the perovskite layer at the valleys is a site of charge accumulation. This charge accumulation easily disrupts the internal crystal structure of the perovskite at the valleys, causing perovskite decomposition and the production of lead overiodide. The lead iodide produced by perovskite decomposition further induces charge accumulation at the perovskite valleys, accelerating perovskite aging and decomposition, severely compromising perovskite stability, and resulting in a rapid decline in device performance. Summary of the Invention

[0004] To improve the stability of perovskite and solve the problem of rapid performance degradation in devices, this application provides a perovskite solar cell, its fabrication method, and a photovoltaic module.

[0005] In one aspect, this application provides a perovskite solar cell.

[0006] This perovskite solar cell includes:

[0007] The base has a velvety surface structure, which has valley peaks and valley bottoms;

[0008] The perovskite layer comprises a perovskite quantum dot layer and a two-dimensional to three-dimensional perovskite layer. The perovskite quantum dot layer fills the valley bottom. The perovskite quantum dot layer comprises perovskite quantum dots ABX3, where A is one of formamidinium, methylamine, or cesium, B is Pb, and X is one of I, Br, or Cl. Ligands are distributed on the surface of the perovskite quantum dots. The ligands are one or more combinations of L-type ligands, S-type ligands, and Z-type ligands. The L-type ligands include Lewis bases, the S-type ligands include one or more of ammonium salts, free radicals, or zwitterionic molecules, and the Z-type ligands include Lewis acids. The two-dimensional to three-dimensional perovskite layer comprises a two-dimensional perovskite layer stacked on the perovskite quantum dot layer and a three-dimensional perovskite layer stacked on the two-dimensional perovskite layer. The two-dimensional perovskite layer is obtained by reacting a lead halide framework layer, ligands, and a cation solution. The three-dimensional perovskite layer is obtained by reacting a lead halide framework layer and a cation solution.

[0009] As an optional implementation, in embodiments of the present invention, the L-type ligand includes one or both of trioctylphosphine and trioctylphosphine oxide; and / or,

[0010] The S-type ligands include one or more of the following: polyetheramine, polyphthalamide, 4-trifluoromethylphenethylamine iodide, bis(dodecyl dimethyl ammonium halide), dodecenyl succinic anhydride, hexadecyl trimethyl ammonium bromide, 5,5'-dithiobis(2-nitrobenzoic acid), 4-dibutylaminoketone acid, bis(2,4,4-trimethylpentyl)phosphonic acid, phthalaldehyde, dodecylbenzenesulfonic acid, nonenyl succinic anhydride, diethylenetriamine hydrochloride, 1,3-adamantanediamine, 2,3-anthracitedicarboxaldehyde, iminodiacetic acid, ethylenediaminetetraacetic acid, ammonium thiocyanate, sodium thiocyanate, 3,5-diamino-1,2,4-triazole, carboxyl, phosphate, sulfonic acid, and thiol groups; and / or,

[0011] The Z-type ligand includes Na + Alkali metal salts and K + One or two of the alkali metal salts.

[0012] As an optional implementation, in an embodiment of the present invention, the two-dimensional-three-dimensional perovskite layer covers the perovskite quantum dot layer and the valley tip, the textured structure is a pyramid structure, the perovskite quantum dot layer filling the valley bottom has an inverted pyramid shape, the two-dimensional-three-dimensional perovskite layer includes alternating peaks and flat sections, the peaks are correspondingly located above the valley tip and the shape of the peaks matches the shape of the valley tip, and the flat sections are correspondingly located above the perovskite quantum dot layer.

[0013] As an optional implementation, in the embodiments of the present invention, the thickness of the perovskite quantum dot layer is 100nm to 500nm, and the thickness of the two-dimensional to three-dimensional perovskite layer is 500nm to 1000nm.

[0014] As an optional implementation, in an embodiment of the present invention, the lead halide framework layer includes alternating sharp framework portions and flat framework portions, the sharp framework portions being located above the valley tips and matching the shape of the valley tips, the flat framework portions being located above the perovskite quantum dot layer; and / or, the thickness of the lead halide framework layer is 350 nm to 800 nm.

[0015] As an optional implementation, in an embodiment of the present invention, the two-dimensional perovskite layer is located in the flattened portion, and the film thickness of the two-dimensional perovskite layer is 10 nm to 100 nm.

[0016] As an optional implementation, in embodiments of the present invention, the perovskite solar cell is in the form of a nip structure or a pin structure.

[0017] As an optional implementation, in embodiments of the present invention, the lead halide framework layer comprises lead iodide and cesium bromide; and / or,

[0018] The solute in the cationic solution includes one or more of iodoformamidine, bromoformamidine, chloroformamidine, iodoformamine, bromoformamine, and chloroformamine; and / or,

[0019] The solvent for the cationic solution includes one or both of anhydrous ethanol and isopropanol.

[0020] As an optional implementation, in an embodiment of the present invention, the concentration of iodoformamidine in the cation solution is 0.3 mol / L to 0.6 mol / L, the concentration of bromomethylamine is 0 mol / L to 0.2 mol / L, the concentration of chloromethylamine is 0 mol / L to 0.15 mol / L, the concentration of bromoformamidine is 0 mol / L to 0.6 mol / L, the concentration of chloroformamidine is 0 mol / L to 0.2 mol / L, and the concentration of iodoformamidine is 0 mol / L to 0.2 mol / L.

[0021] As an optional implementation, in an embodiment of the present invention, the perovskite solar cell is a perovskite-silicon tandem solar cell, the substrate includes a texturized silicon substrate cell and a composite layer and a first transport layer sequentially stacked on the texturized silicon substrate cell, the perovskite layer being stacked on the surface of the first transport layer, and the perovskite solar cell further includes:

[0022] A second transport layer stacked on the perovskite layer on the side of the texturized silicon substrate cell away from the cell.

[0023] A transparent electrode layer stacked on the side of the second transport layer facing away from the textured silicon substrate cell;

[0024] One of the first transport layer and the second transport layer is an electron transport layer, and the other is a hole transport layer;

[0025] It also includes a positive electrode and a negative electrode, wherein the positive electrode forms an ohmic contact with the transparent electrode layer and the negative electrode forms an ohmic contact with the texturized silicon bottom cell.

[0026] As an optional implementation, in embodiments of the present invention, the texturized silicon bottom cell includes one or more of the following: emitter passivation and back contact cell, tunnel oxide passivation contact cell, heterojunction cell, heterojunction back contact crystalline silicon cell, and tunnel oxide passivation back contact cell; and / or,

[0027] The composite layer is made of one or both of indium tin oxide and indium zinc oxide; the hole transport layer is made of one or more of nickel oxide, cuprous oxide, Spiro-TTB, and cuprous thiocyanate; and / or,

[0028] The material of the electron transport layer includes C. 60 ; and / or,

[0029] The material of the transparent electrode layer includes one or both of indium tin oxide and indium zinc oxide.

[0030] As an optional implementation, in embodiments of the present invention, the thickness of the composite layer is 20 nm to 30 nm; and / or,

[0031] The thickness of the hole transport layer is 20nm to 30nm; and / or,

[0032] The thickness of the electron transport layer is 10 nm to 30 nm; and / or,

[0033] The thickness of the transparent electrode layer is 80nm to 120nm.

[0034] As an optional implementation, in an embodiment of the present invention, the perovskite solar cell further includes:

[0035] A hole-modifying layer, wherein the hole-modifying layer is located between the hole transport layer and the perovskite layer; and / or,

[0036] A passivation layer, wherein the passivation layer is located between the perovskite layer and the electron transport layer; and / or,

[0037] A buffer layer, wherein the buffer layer is located between the electron transport layer and the transparent electrode layer; and / or,

[0038] An antireflection layer is located on the side of the transparent electrode layer opposite to the fabrication of the texturized silicon substrate cell.

[0039] As an optional implementation, in embodiments of the present invention, the material of the hole-modifying layer includes 2PACz, 4PACz, Meo-2PACz, Meo-4PACz; and / or,

[0040] The passivation layer is made of lithium fluoride; and / or,

[0041] The buffer layer is made of tin dioxide; and / or,

[0042] The antireflective layer is made of one or both of magnesium fluoride and lithium fluoride.

[0043] As an optional implementation, in embodiments of the present invention, the hole-modifying layer is a monolayer; and / or,

[0044] The passivation layer has a thickness of 1 nm to 5 nm; and / or,

[0045] The thickness of the buffer layer is 20nm to 30nm; and / or,

[0046] The thickness of the antireflective layer is 80nm to 120nm.

[0047] As an optional implementation, in an embodiment of the present invention, the perovskite solar cell is a single-junction perovskite solar cell, the substrate includes a textured transparent electrode layer and a first transport layer stacked on the textured transparent electrode layer, the perovskite layer is stacked on the surface of the first transport layer, and the perovskite solar cell further includes:

[0048] A second transport layer is stacked on the side of the perovskite layer away from the textured transparent electrode layer, wherein one of the first transport layer and the second transport layer is an electron transport layer and the other is a hole transport layer;

[0049] It also includes a positive electrode and a negative electrode, wherein the positive electrode forms an ohmic contact with the second transport layer and the negative electrode forms an ohmic contact with the textured transparent electrode layer.

[0050] Secondly, this application provides a method for preparing a perovskite solar cell.

[0051] The fabrication method of this perovskite solar cell includes the following steps:

[0052] Provide a substrate: the surface of the substrate has a velvety structure, the velvety structure having valley peaks and valley bottoms;

[0053] Preparation of perovskite quantum dot layer: Perovskite quantum dots ABX3 are filled into the valley bottom, and the perovskite quantum dot layer is obtained after annealing;

[0054] Preparation of two-dimensional-three-dimensional perovskite layer: A lead halide framework layer is prepared on the perovskite quantum dot layer and the valley tip, a cationic solution is coated on the lead halide framework layer, and a two-dimensional-three-dimensional perovskite layer is formed after annealing.

[0055] As an optional implementation, in embodiments of the present invention, the perovskite quantum dot layer is deposited by a solution method, which includes any one of spin coating, blade coating, spray coating, or slot coating, followed by annealing; and / or,

[0056] The lead halide framework layer is prepared by a dual-source co-evaporation process to deposit lead iodide and cesium bromide, wherein the evaporation rate ratio of lead iodide to cesium bromide is 5:1 to 10:1; and / or,

[0057] Methods for applying the cationic solution include spin coating and slot coating;

[0058] The annealing temperature for preparing the perovskite quantum dot layer is 80℃~120℃, and the annealing time is 10min~30min; and / or,

[0059] The coating environment for the cationic solution requires a humidity of less than 10% RH and a temperature of 25°C; and / or,

[0060] The annealing process for preparing the two-dimensional to three-dimensional perovskite layer was carried out at a humidity of 5%RH to 40%RH and an annealing temperature of 100℃ to 170℃ for 15 min to 30 min.

[0061] As an optional implementation, in embodiments of the present invention, the solution method for preparing the perovskite quantum dot layer includes any one of spin coating, blade coating, spray coating, or slot coating; and / or,

[0062] The annealing temperature for preparing the perovskite quantum dot layer is 80℃~120℃, and the annealing time is 10min~30min; and / or,

[0063] The evaporation rate ratio of lead iodide to cesium bromide in the preparation of the lead halide framework layer is 5:1 to 10:1; and / or,

[0064] The coating environment for the cationic solution requires a humidity of less than 10% RH and a temperature of 25°C; and / or,

[0065] The annealing process for preparing the two-dimensional to three-dimensional perovskite layer was carried out at a humidity of 5%RH to 40%RH and an annealing temperature of 100℃ to 170℃ for 15 min to 30 min.

[0066] As an optional implementation, in an embodiment of the present invention, the perovskite solar cell is a perovskite-silicon tandem solar cell, and the method for preparing the perovskite solar cell further includes the following steps:

[0067] Preparation of the substrate: A texturized silicon substrate cell is provided, a composite layer is prepared on the texturized silicon substrate cell, and a first transport layer is prepared on the composite layer;

[0068] Preparation of the perovskite layer: The perovskite layer is prepared on the substrate, and the perovskite layer is stacked on the surface of the first transport layer;

[0069] Fabrication of a second transport layer: A second transport layer is fabricated on the perovskite layer, wherein one of the first transport layer and the second transport layer is an electron transport layer and the other is a hole transport layer;

[0070] Fabrication of a transparent electrode layer: The transparent electrode layer is fabricated on the second transport layer;

[0071] A positive electrode and a negative electrode are prepared to obtain the perovskite solar cell.

[0072] As an optional implementation, in the embodiments of the present invention, the composite layer is prepared by magnetron sputtering; and / or, the hole transport layer is prepared by physical vapor deposition or evaporation; and / or, the electron transport layer is prepared by evaporation; and / or, the transparent electrode layer is prepared by magnetron sputtering, and the positive electrode is prepared by evaporation; and / or, the negative electrode is prepared by evaporation.

[0073] As an optional implementation, in an embodiment of the present invention, the hole transport layer and the perovskite layer are provided with a hole modification layer, which is prepared by a solution method; and / or, a passivation layer is further prepared between the perovskite layer and the electron transport layer, which is prepared by an evaporation method; and / or, a buffer layer is further prepared between the electron transport layer and the transparent electrode layer, which is prepared by an atomic deposition method; and / or, an antireflection layer is prepared on the side of the transparent electrode layer away from the textured silicon substrate, which is prepared by an evaporation method.

[0074] As an optional implementation, in an embodiment of the present invention, the perovskite solar cell is a single-junction perovskite solar cell, and the method for preparing the perovskite solar cell further includes the following steps:

[0075] Preparation of the substrate: A textured transparent electrode layer is provided, and a first transport layer is prepared on the textured transparent electrode layer;

[0076] Preparation of the perovskite layer: The perovskite layer is prepared on the substrate, and the perovskite layer is stacked on the surface of the first transport layer;

[0077] Fabrication of a second transport layer: A second transport layer is fabricated on the perovskite layer, wherein one of the first transport layer and the second transport layer is an electron transport layer and the other is a hole transport layer;

[0078] Fabrication of a transparent electrode layer: The transparent electrode layer is fabricated on the second transport layer;

[0079] A positive electrode and a negative electrode are prepared to obtain the perovskite solar cell.

[0080] Thirdly, embodiments of the present invention provide a photovoltaic module, which includes the perovskite solar cell described in the first aspect or the perovskite solar cell prepared by the preparation method described in the second aspect.

[0081] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0082] This invention provides a perovskite solar cell, wherein the perovskite quantum dot material is a three-dimensional perovskite material, and the stability of perovskite quantum dots is higher than that of conventional three-dimensional bulk perovskite. This application deposits the perovskite quantum dot layer at the valley bottom, avoiding the use of lead iodide material at the valley bottom, which significantly reduces the lead iodide content at the valley bottom. This solves the problem of lead iodide residue at the valley bottom in conventional two-step perovskite layer preparation methods, improving the perovskite layer's interfacial contact performance and charge transport performance. Furthermore, the perovskite quantum dot material itself has excellent stability, and the perovskite layer at the valley bottom is less prone to rapid decomposition due to charge accumulation, significantly improving the stability of the perovskite quantum dot layer at the valley bottom.

[0083] Furthermore, since the surface of perovskite quantum dots is distributed with one or more L-type, S-type, and Z-type ligands, these ligands can not only induce the orientation and growth of perovskite grains in the upper two-dimensional to three-dimensional perovskite layer, but also enter the lead halide framework layer and participate in the reaction between the lead halide framework layer and the cation solution during the subsequent reaction process. This allows the lead halide framework layer near the surface of the perovskite quantum dot layer to react with the ligands and the cation solution to form a two-dimensional bulk perovskite layer. The remaining lead halide framework layer reacts with the cation solution to form a conventional three-dimensional bulk perovskite layer. Finally, a perovskite layer with a three-dimensional-two-dimensional-three-dimensional structure is obtained. The stability of this three-dimensional-two-dimensional-three-dimensional perovskite layer from high to low is as follows: three-dimensional perovskite quantum dot layer, two-dimensional perovskite layer, and three-dimensional perovskite layer. This is consistent with the concentration direction of charge accumulation distribution, which is beneficial to further reduce the decomposition of perovskite caused by charge accumulation. Compared to the conventional three-dimensional perovskite layer formed by the reaction of the lead halide framework layer with the cation solution, the aforementioned two-dimensional perovskite layer exhibits superior thermal stability, chemical stability, and environmental stability, thereby enhancing the stability of the two-dimensional to three-dimensional perovskite layer. Attached Figure Description

[0084] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0085] Figure 1 This is a schematic diagram illustrating a two-step method combining vapor deposition and solution processing to prepare perovskite layers in related technologies.

[0086] Figure 2 This is a schematic diagram of the preparation of the perovskite layer disclosed in the embodiments of the present invention;

[0087] Figure 3 This is a schematic diagram of a perovskite solar cell disclosed in an embodiment of the present invention;

[0088] Figure 4 This is a schematic diagram of a perovskite solar cell with an added hole modification layer, passivation layer, buffer layer and antireflection layer disclosed in an embodiment of the present invention;

[0089] Figure 5 This is a schematic diagram of the perovskite layer preparation steps disclosed in the embodiments of the present invention;

[0090] Figure 6 This is a schematic diagram of the preparation steps of the perovskite quantum dot layer disclosed in the embodiments of the present invention.

[0091] Icons: 100, Substrate; 11, Texturized Silicon Substrate; 12, Composite Layer; 13, First Transport Layer; 14, Hole Modification Layer; 200, Perovskite Layer; 21, Perovskite Quantum Dot Layer; 211, Perovskite Quantum Dot Precursor Solution; 22, Two-Dimensional to Three-Dimensional Perovskite Layer; 221, Lead Halide Framework Layer; 2211, Sharp Framework Section; 2212, Flat Framework Section; 222, Cation Solution; 223, Two-Dimensional Perovskite Layer; 224, Three-Dimensional Perovskite Layer; 225, Sharp Section; 226, Flat Section; 300, Passivation Layer; 400, Second Transport Layer; 500, Buffer Layer; 600, Transparent Electrode Layer; 700, Positive Electrode; 800, Negative Electrode; 900, Antireflection Layer. Detailed Implementation

[0092] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0093] Texturized silicon-based solar cells can form pyramidal structures on their surface to reduce light reflection, thereby improving the solar cell's light conversion efficiency. However, this also introduces new challenges to the integration of silicon-based solar cells and perovskite solar cells.

[0094] There are two common methods for preparing perovskite layers on pyramid substrates. The first is a one-step solution method, where a perovskite precursor solution is coated onto the pyramid substrate. This method maintains the uniformity of the perovskite layer composition, with no local lead iodide residue or impurities. However, this one-step solution method is suitable for preparing perovskite layers on polished silicon substrates or on pyramids with a height less than 1 μm. When the pyramid height exceeds 1 μm, especially greater than 2 μm, the perovskite layer prepared by the one-step solution method is difficult to completely cover the pyramid's apex, leading to short circuits or low efficiency in the device. The second method is a two-step method combining vapor deposition and solution preparation. Figure 1 The diagram shows a two-step method for preparing a perovskite layer: first, a lead halide framework layer 221 with shape retention is deposited on a pyramidal substrate 100; then, a cationic solution 222 is coated onto the lead halide framework layer 221, thereby obtaining a perovskite layer with better textured shape retention. This method does not require a specific pyramid height and can achieve better shape retention on a relatively tall pyramidal substrate 100.

[0095] Commercially available texturized silicon substrate solar cells typically have a pyramid height greater than 2 μm. Therefore, a two-step method combining vapor deposition and solution processing is commonly used to fabricate the perovskite layer on these cells. However, the valleys of the perovskite layer prepared using this two-step method tend to retain unreacted lead iodide, and these valleys are often where charge accumulates. This charge accumulation disrupts the internal crystal structure of the perovskite at the valleys, making it more susceptible to decomposition. The lead iodide produced during this decomposition further induces charge accumulation at the valleys, accelerating the aging and decomposition of the perovskite layer and leading to a rapid degradation of the device. Therefore, the residual lead iodide at the valleys generally results in lower stability for perovskite solar cells fabricated using the two-step method on commercially available texturized silicon substrates compared to perovskite solar cells fabricated using the one-step method on a polished silicon substrate.

[0096] Furthermore, when a higher thickness is required for the perovskite layer, the thickness of the lead halide framework layer needed for conformal performance also needs to be increased accordingly. To achieve better conformal performance on the pyramid substrate, the lead halide framework layer prepared by vapor deposition needs to be highly dense. However, when the lead halide framework layer is thick, the cation solution has difficulty diffusing to the valleys of the dense lead halide framework layer. This results in more lead iodide remaining at the valleys of the perovskite layer as the lead halide framework layer thickness increases. Since lead iodide has low conductivity, its residue in the perovskite layer can easily hinder interfacial charge transport and lead to low device efficiency.

[0097] Therefore, this application provides a perovskite solar cell and its preparation method, as well as a photovoltaic module, to solve the problem of poor stability of perovskite at the bottom of the pyramid, and further solve the problem of insufficient lead iodide reaction leading to excess.

[0098] The technical solution of the present invention will be further described below with reference to the embodiments and accompanying drawings.

[0099] In a first aspect, embodiments of this application provide a perovskite solar cell.

[0100] This perovskite solar cell includes:

[0101] A substrate 100 with a velvety surface structure, wherein the velvety surface structure has valley peaks and valley bottoms;

[0102] Perovskite layer 200 comprises a perovskite quantum dot layer 21 and a two-dimensional / three-dimensional perovskite layer 22. The perovskite quantum dot layer 21 fills the valley bottom and includes perovskite quantum dots ABX3, where A is one of formamidinium, methylamine, or cesium, B is Pb, and X is one of I, Br, or Cl. Ligands are distributed on the surface of the perovskite quantum dots; the ligands are one or more combinations of L-type, S-type, and Z-type ligands. L-type ligands include Lewis bases, and S-type ligands include… The perovskite layer 22 includes one or more of ammonium salts, free radicals, or zwitterionic molecules. The Z-type ligand includes Lewis acids. The two-dimensional-three-dimensional perovskite layer 22 includes a two-dimensional perovskite layer 223 stacked on the perovskite quantum dot layer 21 and a three-dimensional perovskite layer 224 stacked on the two-dimensional perovskite layer 223. The two-dimensional perovskite layer 223 is obtained by reacting the lead halide framework layer 221, the ligand, and the cation solution 222. The three-dimensional perovskite layer 224 is obtained by reacting the lead halide framework layer 221 and the cation solution 222.

[0103] Perovskite quantum dots are a type of three-dimensional perovskite material. The stability of perovskite quantum dots is higher than that of conventional three-dimensional bulk perovskites. See also... Figure 2 This application deposits the perovskite quantum dot layer 21 at the valley bottom, avoiding the use of lead iodide material at the valley bottom. This significantly reduces the lead iodide content at the valley bottom, solving the problem of lead iodide residue at the valley bottom during conventional two-step preparation of the perovskite layer 200. This improves the interfacial contact performance and charge transport performance of the perovskite layer 200. Furthermore, the perovskite quantum dot material itself has excellent stability; the perovskite layer 200 at the valley bottom is less prone to rapid decomposition due to charge accumulation, significantly enhancing the stability of the perovskite quantum dot layer 21 at the valley bottom.

[0104] Furthermore, since the surface of the perovskite quantum dots is distributed with one or more L-type, S-type, and Z-type ligands, these ligands can not only induce the orientation and growth of perovskite grains in the upper two-dimensional to three-dimensional perovskite layer 22, but also, during the subsequent reaction between the lead halide framework layer 221 and the cation solution 222, these ligands enter the lead halide framework layer 221 and participate in the reaction between the lead halide framework layer 221 and the cation solution 222, so that the lead halide framework layer 221 near the surface of the perovskite quantum dot layer 21, together with the ligands and the cation solution 222, can work together. The reaction forms a two-dimensional bulk perovskite layer 200. The remaining lead halide framework layer 221 reacts with the cation solution 222 to form a conventional three-dimensional bulk perovskite layer 200. Finally, a perovskite layer 200 with a three-dimensional-two-dimensional-three-dimensional structure is obtained. The stability of this three-dimensional-two-dimensional-three-dimensional perovskite layer 200, from highest to lowest, is as follows: three-dimensional perovskite quantum dot layer 21, two-dimensional perovskite layer 223, and three-dimensional perovskite layer 224. This stability aligns with the concentration direction of charge accumulation, which is beneficial for further reducing charge accumulation leading to perovskite decomposition. Compared to the conventional three-dimensional bulk perovskite layer 200 formed by the reaction of lead halide framework layer 221 with cation solution 222, the aforementioned two-dimensional perovskite layer 223 exhibits superior thermal stability, chemical stability, and environmental stability, thus enhancing the stability of the two-dimensional-three-dimensional perovskite layer 22.

[0105] For example, the perovskite quantum dot ABX3 is FAPbI3.

[0106] The textured substrate 100 described above can be provided by a textured silicon substrate or other textured conductive substrate. The specific type of substrate 100 is not specifically limited. For example, when the substrate 100 is selected as a textured silicon substrate, the resulting solar cell is a perovskite silicon tandem solar cell. When the substrate 100 is selected as a textured transparent conductive glass substrate, the resulting solar cell is a single-junction perovskite solar cell.

[0107] Preferably, the L-type ligand includes one or both of trioctylphosphine and trioctylphosphine oxide; and / or,

[0108] S-type ligands include one or more of the following: polyetheramine, polyphthalamide, 4-trifluoromethylphenethylamine iodide, bis(dodecyl dimethyl ammonium halide), dodecenyl succinic anhydride, hexadecyl trimethyl ammonium bromide, 5,5'-dithiobis(2-nitrobenzoic acid), 4-dibutylaminoketone acid, bis(2,4,4-trimethylpentyl)phosphonic acid, phthalaldehyde, dodecylbenzenesulfonic acid, nonenyl succinic anhydride, diethylenetriamine hydrochloride, 1,3-adamantanediamine, 2,3-anthracitedicarboxaldehyde, iminodiacetic acid, ethylenediaminetetraacetic acid, ammonium thiocyanate, sodium thiocyanate, 3,5-diamino-1,2,4-triazole, carboxyl, phosphate, sulfonic acid, and thiol groups; and / or,

[0109] Z-type ligands include Na + Alkali metal salts and K + One or two of the alkali metal salts.

[0110] The abbreviation for trioctylphosphine is TOP, and its English name is TRI-N-OCTYLPHOSPHINE. The abbreviation for trioctylphosphine oxide is TOPO, and its English name is Trioctylphosphine oxide.

[0111] The abbreviation for polyetheramine is PEA, and its English name is amino-terminated polyoxypropylene. The abbreviation for polyphthalamide is PPA, and its English name is polyphthalamide. The abbreviation for 4-trifluoromethylphenethylamine iodide is CF3PEAI, and the abbreviation for didodecyl dimethyl ammonium halide is DDAX, such as didodecyl dimethyl ammonium bromide, which is abbreviated as DDAB, and its English name is Didodecyldimethylammonium bromide. The abbreviation for dodeceny succinic anhydride is DDAS, and its English name is dodeceny succinicanhydride. The abbreviation for hexadecyl trimethyl ammonium bromide is CTAB, and its English name is Hexadecyl trimethyl ammonium bromide. The abbreviation for 5,5'-dithiobis-(2-nitrobenzoic acid) is DTDB, and its English name is 5,5'-Dithiobis-(2-nitrobenzoic acid). The abbreviation for 4-dibutylaminoketo acid is BBA, and its English name is 2-[4-(Dibutylamino)-2-hydroxybenzoyl]benzoic acid. The abbreviation for bis(2,4,4-trimethylpentyl)phosphonic acid is TMPPA, and its English name is diisooctylphosphinic acid. The abbreviation for o-phthalalaldehyde is OPA, and its English name is o-Phthalaldehyde. The abbreviation for dodecylbenzenesulfonic acid is DBSA, and its English name is dodecyl benzene sulfonic acid. The abbreviation for nonenylsuccinic anhydride is NSA, and its English name is 2-Nonen-1-ylsuccinic anhydride; Nonnylsuccinic anhydride. The English name for diethylenetriamine hydrochloride is N-(2-aminoethyl)ethane-1,2-diamine hydrochloride (1:1). The abbreviation for 1,3-adamantanediamine is ADDA, and its English name is 1,3-Adamantanediamine. 2,3-Anthracene-2,3-dialdehyde is abbreviated as ADA. Iminodiacetic acid is abbreviated as IDA. Ethylenediaminetetraacetic acid is abbreviated as EDTA. Ammonium thiocyanate is abbreviated as Ammonium thiocyanate.The English name for sodium thiocyanate is Sodium sulfocyanate, and the English abbreviation for 3,5-diamino-1,2,4-triazole is DAT, with the English name 1H-1,2,4-Triazole-3,5-diamine.

[0112] The aforementioned ligands have a better effect on inducing the orientation growth of newly formed perovskite grains, which helps to reduce grain boundary defects in the two-dimensional-three-dimensional perovskite layer 22 above the perovskite quantum dot layer 21, and effectively participates in the formation of the two-dimensional perovskite layer 223, thereby improving the stability of the two-dimensional-three-dimensional perovskite layer 22.

[0113] In some embodiments, a two-dimensional to three-dimensional perovskite layer 22 covers the perovskite quantum dot layer 21 and the valley tips. The textured structure is a pyramid structure. The perovskite quantum dot layer 21, which fills the valley bottom, has an inverted pyramid shape. The two-dimensional to three-dimensional perovskite layer 22 includes alternating peaks 225 and flattened portions 226. The peaks 225 are located above the valley tips and their shapes match those of the valley tips. The flattened portions 226 are located above the perovskite quantum dot layer 21.

[0114] The perovskite quantum dot layer 21 fills the valley bottom of the substrate 100. When the two-dimensional to three-dimensional perovskite layer 22 is subsequently prepared, the surface and valley tips of the perovskite quantum dot layer 21 together serve as the growth substrate 100 of the lead halide framework layer 221. The substrate reacts with the cationic solution 222 coated on the lead halide framework layer 221 to finally obtain the perovskite layer 200.

[0115] Compared to the conventional two-step method for preparing the perovskite layer 200, replacing the lead halide framework layer 221 with the perovskite quantum dot layer 21 to fill the valley not only avoids lead iodide deposition at the valley, but also relatively shortens the thickness of the flat portion 226 on the surface of the perovskite quantum dot layer 21. This shortens the diffusion path of the cation solution 222 in the lead halide framework layer 221, reduces the difficulty of the reaction between the cation solution 222 and lead iodide, thereby reducing the residual lead iodide reaction, solving the problem of incomplete and insufficient lead iodide reaction, improving the charge transport effect of the perovskite layer 200, and at the same time, the perovskite layer 200 is less likely to induce excessive charge accumulation due to the presence of lead iodide, thus improving the stability of the perovskite layer 200.

[0116] Furthermore, compared to the pyramid structure of the substrate 100, the perovskite layer 200 is not a traditional fully conformal structure, possessing unique structural advantages: the peak 225 of the second perovskite sublayer matches the shape of the valley tip. This conformal structure allows the perovskite layer 200 to retain the light-trapping advantage of the textured structure, which helps reduce light reflection. It also has a flat portion 226 located above the perovskite quantum dot layer 21. This flat portion 226 is not conformal to the shape of the valley bottom, improving the uniformity of the functional film layer grown above this flat portion 226, which helps reduce the tendency for functional film layer materials to accumulate at the bottom of the pyramid. For example, the passivation layer 300, grown conformally along the structure of the perovskite layer 200, has a more uniform coverage and more thorough passivation. Similarly, the positive electrode 700, compared to contacting the pyramid-shaped transparent electrode layer 600, has a larger and flatter contact surface with the transparent electrode layer 600 grown conformally along the structure of the perovskite layer 200, resulting in higher contact stability. Therefore, preparing subsequent film layers on the perovskite layer 200 with the above structure can improve the passivation effect of the passivation layer 300 and improve the collection efficiency of electrode charge, thereby improving the energy conversion efficiency of the battery.

[0117] In some embodiments, the thickness of the perovskite quantum dot layer 21 is 100 nm to 500 nm, and the thickness of the two-dimensional to three-dimensional perovskite layer 22 is 500 nm to 1000 nm.

[0118] Limiting the thickness of the perovskite quantum dot layer 21 to the aforementioned range improves the effectiveness of the perovskite quantum dot ligand-induced reaction in generating the two-dimensional perovskite layer 223. Furthermore, this thickness of the perovskite quantum dot layer 21 effectively shortens the diffusion distance of the cation solution 222 within the lead halide framework layer 221. Excessive thickness of the perovskite quantum dot layer 21 results in an excessive amount of perovskite quantum dot ligands, reducing electron transport efficiency. Insufficient thickness of the perovskite quantum dot layer 21 leads to an insufficient amount of perovskite quantum dot ligands, making it difficult to form a two-dimensional bulk perovskite layer 200.

[0119] For example, the thickness of the two-dimensional-three-dimensional perovskite layer 22 is 500nm, 530nm, 550nm, 570nm, 600nm, 650nm, 700nm, 720nm, 850nm and 1000nm, etc.; the thickness of the perovskite quantum dot layer 21 is 100nm, 150nm, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm and 500nm, etc.

[0120] In some embodiments, the lead halide framework layer 221 includes alternating sharp framework portions 2211 and flat framework portions, the sharp framework portions 2211 being located above the valley tips and matching the shape of the valley tips, and the flat framework portions 2212 being located above the perovskite quantum dot layer 21; and / or, the thickness of the lead halide framework layer 221 is 350 nm to 800 nm.

[0121] Furthermore, the lead halide framework layer 221 used in the subsequent preparation of the two-dimensional-three-dimensional perovskite layer 22 grows along the surface of the perovskite quantum dot layer 21 and the valley tip surface, so that the lead halide framework layer 221 forms a structure in which the pointed framework portion 2211 and the flat framework portion are alternately connected. The pointed framework portion 2211 is located above the valley tip and the shape of the pointed framework portion 2211 matches the valley tip. The flat framework portion 2212 is located above the perovskite quantum dot layer 21. The cation solution 222 reacts with the lead halide framework layer 221 with this structure, and the structure of the obtained two-dimensional-three-dimensional perovskite layer 22 has a better shape preservation effect with the structure of the lead halide framework layer 221.

[0122] For example, the thickness of the lead halide framework layer 221 is 300nm, 350nm, 400nm, 450nm, 500nm, 550nm, 600nm, 650nm, 700nm, 750nm and 800nm, etc.

[0123] It should be noted that, as Figure 2 As shown, the thickness of the perovskite quantum dot layer 21 is h1, which is the distance from the bottom of the valley of the substrate 100 to the top of the perovskite quantum dot layer 21. The thickness of the lead halide framework layer 221 is h2, which is the distance from the tip of the valley of the substrate 100 to the top of the framework portion of the lead halide framework layer 221. The thickness of the two-dimensional-three-dimensional perovskite layer 22 is h3, which is the distance from the tip of the valley of the substrate 100 to the top of the peak portion 225 of the two-dimensional-three-dimensional perovskite layer 22.

[0124] Preferably, the two-dimensional perovskite layer 223 is located in the flattened portion 226, and the thickness of the two-dimensional perovskite layer 223 is 10 nm to 100 nm.

[0125] When the thickness of the two-dimensional perovskite layer 223 is within the aforementioned range, it exhibits both superior electron transport performance and stability, thereby simultaneously improving the conductivity and stability of the perovskite solar cell. If the thickness of the two-dimensional perovskite layer 223 is too high, electron transport is impaired, resulting in a decrease in electron transport performance; if the thickness is too low, the stability of the perovskite layer 200 decreases. For example, the thickness of the two-dimensional perovskite layer 223 can be 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, or 100nm.

[0126] In some embodiments, the perovskite solar cell is in the form of a nip structure or a pin structure.

[0127] The solution proposed in this application has good versatility and can be applied to perovskite solar cells with nip or pin structures.

[0128] In some embodiments, the lead halide framework layer 221 comprises lead iodide and cesium bromide; and / or, the cation solution 222 comprises one or more combinations of formamidine iodoformidium, formamidine bromoformidium, formamidine chloroformidium, methylamine iodoformidium, methylamine bromoformidium, and methylamine chloroformidium, which may be a mixed solution of formamidine iodoformidium, formamidine bromoformidium, formamidine chloroformidium, methylamine iodoformidium, methylamine bromoformidium, and methylamine chloroformidium in different proportions. The solvent for the cation solution 222 includes anhydrous ethanol and isopropanol, etc. The proportions and concentrations of the above-mentioned cationic components can be adjusted appropriately according to the requirements of the usage environment. Specifically, the concentrations of formamidinium iodoformide are 0.3 mol / L to 0.6 mol / L, methyl bromide are 0 mol / L to 0.2 mol / L, methyl chloroformide are 0 mol / L to 0.15 mol / L, formamidinium iodoformide are 0 mol / L to 0.6 mol / L, methyl bromide are 0 mol / L to 0.2 mol / L, and methyl bromide are 0 mol / L to 0.2 mol / L.

[0129] For example, the concentration of iodoformamide can be 0.3 mol / L, 0.4 mol / L, 0.5 mol / L, and 0.6 mol / L, etc.; the concentration of bromomethylamine can be 0 mol / L, 0.1 mol / L, 0.13 mol / L, 0.15 mol / L, and 0.2 mol / L, etc.; the concentration of chloromethylamine can be 0 mol / L, 0.05 mol / L, 0.08 mol / L, 0.12 mol / L, and 0.15 mol / L, etc.; the concentration of bromoformamide can be 0 mol / L, 0.2 mol / L, 0.4 mol / L, and 0.6 mol / L, etc.; the concentration of chloroformamide can be 0 mol / L, 0.05 mol / L, 0.1 mol / L, and 0.2 mol / L, etc.; and the concentration of iodoformamide can be 0 mol / L, 0.05 mol / L, 0.1 mol / L, and 0.2 mol / L, etc.

[0130] The two-dimensional to three-dimensional perovskite layer 22 prepared by reacting the lead halide framework layer 221 prepared by the above materials with the cation solution 222 has a band gap between 1.63 eV and 1.72 eV, which can cooperate with the perovskite quantum dot layer 21 to improve the energy conversion efficiency of the device.

[0131] In some embodiments, the perovskite solar cell is a perovskite-silicon tandem solar cell, as shown in the reference. Figure 3 The substrate 100 includes a texturized silicon substrate 11 and a composite layer 12 and a first transport layer 13 sequentially stacked on the texturized silicon substrate 11. A perovskite layer 200 is stacked on the surface of the first transport layer 13. The perovskite solar cell also includes:

[0132] A second transport layer 400 is stacked on the side of the perovskite layer 200 facing away from the texturized silicon substrate cell 11;

[0133] A transparent electrode layer 600 is stacked on the side of the second transport layer 400 facing away from the texturized silicon bottom cell 11;

[0134] One of the first transport layer 13 and the second transport layer 400 is an electron transport layer, and the other is a hole transport layer;

[0135] It also includes a positive electrode 700 and a negative electrode 800, wherein the positive electrode 700 forms an ohmic contact with the transparent electrode layer 600, and the negative electrode 800 forms an ohmic contact with the texturized silicon bottom battery 11.

[0136] It should be noted that one of the first transport layer 13 and the second transport layer 400 is an electron transport layer and the other is a hole transport layer. That is, when the first transport layer 13 is an electron transport layer, the second transport layer 400 is a hole transport layer, and when the first transport layer 13 is a hole transport layer, the second transport layer 400 is an electron transport layer.

[0137] The aforementioned textured silicon substrate 11 has a pyramid structure. The composite layer 12 and hole transport layer stacked on the textured silicon substrate 11 are both conformally grown films following the pyramid shape of the textured silicon substrate 11. The perovskite layer 200 stacked on the hole transport layer has reduced lead iodide residue and improved crystallinity. However, it is not completely conformally grown relative to the textured silicon substrate 11, composite layer 12, and hole transport layer (see the structure of the not completely conformally grown perovskite layer 200 for details). Figure 2 , Figure 3 The stacked structure of the various film layers in the perovskite solar cell (the structure that is not fully conformal is not shown). Compared to the fully conformal perovskite layer 200 with its pyramidal structure, the light-trapping effect of this not fully conformal perovskite layer 200 is reduced to some extent, but it has the advantages of better contact stability and contact effect. Therefore, the defects of the electron transport layer and the transparent electrode layer 600 grown along the structure of the perovskite layer 200 are reduced, the electron transport effect is improved, and the electron collection effect is improved. Overall, the energy conversion efficiency of the final perovskite solar cell is improved.

[0138] In some embodiments, the texturized silicon bottom cell 11 includes one or more of the following: emitter passivation and back contact cell, tunnel oxide passivation contact cell, heterojunction cell, heterojunction back contact crystalline silicon cell, and tunnel oxide passivation back contact cell; and / or,

[0139] The composite layer 12 is made of one or both of indium tin oxide and indium zinc oxide; the hole transport layer is made of one or more of nickel oxide, cuprous oxide, Spiro-TTB, and cuprous thiocyanate; and / or,

[0140] The materials of the electron transport layer include C 60 ; and / or,

[0141] The transparent electrode layer 600 is made of one or both of indium tin oxide and indium zinc oxide.

[0142] In some embodiments, the thickness of the composite layer 12 is 20 nm to 30 nm; and / or,

[0143] The hole transport layer has a thickness of 20 nm to 30 nm; and / or,

[0144] The thickness of the electron transport layer is 10 nm to 30 nm; and / or,

[0145] The thickness of the transparent electrode layer 600 is 80nm to 120nm.

[0146] In some embodiments, reference is made to Figure 4 Perovskite solar cells also include:

[0147] Hole modification layer 14, which is located between the hole transport layer and the perovskite layer 200; and / or,

[0148] Passivation layer 300, the passivation layer 300 is located between perovskite layer 200 and electron transport layer; and / or,

[0149] Buffer layer 500, located between electron transport layer and transparent electrode layer 600; and / or,

[0150] Antireflection layer 900 is located on the side of transparent electrode layer 600 opposite to the fabricated textured silicon substrate cell 11.

[0151] In some embodiments, the material of the hole-modified layer 14 includes one or more combinations of 2PACz, 4PACz, Meo-2PACz, and Meo-4PACz; and / or,

[0152] The material of the passivation layer 300 includes lithium fluoride; and / or,

[0153] The material of the buffer layer 500 is tin dioxide; and / or,

[0154] The antireflective layer 900 is made of one or both of magnesium fluoride and lithium fluoride.

[0155] In some embodiments, the hole-modified layer 14 is a monolayer; and / or,

[0156] The passivation layer 300 has a thickness of 1 nm to 5 nm; and / or,

[0157] The thickness of the buffer layer 500 is 20nm to 30nm; and / or,

[0158] The thickness of the antireflective layer 900 is 100nm to 120nm.

[0159] In the above-mentioned film layers, the hole modification layer 14 on the heterojunction bottom cell grows conformally along the pyramid shape of the heterojunction bottom cell. Since the structure of the perovskite layer 200 is similar to the pyramid structure, but not completely conformally, the passivation layer 300, buffer layer 500 and antireflection layer 900 prepared subsequently grow conformally along the structure of the perovskite layer 200.

[0160] In some embodiments, the perovskite solar cell is a single-junction perovskite solar cell, the substrate 100 includes a textured transparent electrode layer and a first transport layer 13 stacked on the textured transparent electrode layer, the perovskite layer 200 is stacked on the surface of the first transport layer 13, and the single-junction perovskite solar cell further includes:

[0161] A second transport layer 400 is stacked on the side of the perovskite layer 200 away from the textured transparent electrode layer. One of the first transport layer 13 and the second transport layer 400 is an electron transport layer, and the other is a hole transport layer.

[0162] It also includes a positive electrode 700 and a negative electrode 800. The positive electrode 700 forms an ohmic contact with the second transport layer 400, and the negative electrode 800 forms an ohmic contact with the textured transparent electrode layer.

[0163] For example, the textured transparent electrode layer is textured conductive glass.

[0164] It should be noted that one of the first transport layer 13 and the second transport layer 400 is an electron transport layer and the other is a hole transport layer. That is, when the first transport layer 13 is an electron transport layer, the second transport layer 400 is a hole transport layer, and when the first transport layer 13 is a hole transport layer, the second transport layer 400 is an electron transport layer.

[0165] Secondly, embodiments of this application provide a method for preparing a perovskite solar cell.

[0166] The fabrication method of this perovskite solar cell includes the following steps:

[0167] Substrate 100 is provided: The surface of substrate 100 has a velvety structure, the velvety structure having valley peaks and valley bottoms;

[0168] Preparation of perovskite quantum dot layer 21: Perovskite quantum dots ABX3 are filled into the valley bottom to obtain perovskite quantum dot layer 21;

[0169] Preparation of two-dimensional-three-dimensional perovskite layer 22: A lead halide framework layer 221 is prepared on the perovskite quantum dot layer 21, a cationic solution 222 is coated on the lead halide framework layer 221, and after annealing, a two-dimensional-three-dimensional perovskite layer 22 is formed.

[0170] This application fills the valley bottom with perovskite quantum dots ABX3, and the perovskite quantum dot layer 21 grows along the shape of the valley bottom of the substrate 100 to obtain a perovskite quantum dot layer 21 that matches the shape of the valley bottom of the substrate 100. The perovskite quantum dot layer 21 has an inverted pyramid structure and its size matches the valley bottom. A lead halide framework layer 221 is deposited on the alternating perovskite quantum dot layer 21 surface and the valley tip surface not covered by the perovskite quantum dot layer 21. The lead halide framework layer 221 covers the surface jointly composed of the perovskite quantum dot layer 21 and the pyramid base 100, resulting in a lead halide framework layer 221 with a shape adapted to the surface. The diffusion path of the cation solution 222 in this shape of lead halide framework layer 221 is shorter, making it easier to diffuse to the bottom of the lead halide framework layer 221. Therefore, the lead iodide reaction at the bottom of the lead halide framework layer 221 is sufficient, and the lead iodide reaction residue is less likely to occur, thereby reducing the interfacial recombination of the perovskite layer 200, reducing the electron loss of the perovskite layer 200, and further improving the stability of the perovskite layer 200.

[0171] By pre-depositing a perovskite quantum dot layer 21 at the valley bottom before depositing the lead halide framework layer 221, the perovskite quantum dot material has high stability and is not easily decomposed, which is beneficial to improving the stability of the perovskite at the interface. Moreover, the perovskite quantum dot layer 21 replaces the lead halide framework layer 221 to fill the valley bottom, which can effectively prevent the deposition of residual lead iodide at the valley bottom of the substrate 100, and improve the charge transport efficiency and stability of the interface between the perovskite layer 200 and the substrate 100. At the same time, during the thermal annealing process, the ligands on the surface of the perovskite quantum dot layer 21 penetrate into the lead halide framework layer 221 at the interface and participate in the reaction between the lead halide framework layer 221 and the cation solution 222 to form a two-dimensional perovskite with a more stable structure. The remaining lead halide framework layer 221 that has not been in contact with the ligands still reacts with the cation solution 222 to generate a three-dimensional perovskite, and finally forms a perovskite layer 200 with a three-dimensional-two-dimensional-three-dimensional structure, thereby improving the stability of the perovskite layer 200 at the valley bottom of the pyramid.

[0172] In some embodiments, the perovskite quantum dot layer 21 is deposited by a solution method, including any one of spin coating, blade coating, spray coating, or slot coating, followed by annealing; and / or,

[0173] The lead halide framework layer 221 is prepared by a dual-source co-evaporation process, in which lead iodide and cesium bromide are deposited at a rate of 5:1 to 10:1; and / or,

[0174] Methods for coating cationic solution 222 include spin coating and slot coating.

[0175] The annealing temperature for step 21 of the perovskite quantum dot layer preparation is 80℃~120℃, and the annealing time is 10min~30min; and / or,

[0176] The coating environment for cationic solution 222 requires a humidity of less than 10% RH and a temperature of 25°C; and / or,

[0177] The annealing process for preparing the two-dimensional-three-dimensional perovskite layer in step 22 was carried out at a humidity of 5%RH to 40%RH and an annealing temperature of 100℃ to 170℃ for 15 min to 30 min.

[0178] Reference Figure 6 The perovskite quantum dot layer 21 is deposited by solution method. Specifically, on the surface of the pyramid base 100, the perovskite quantum dot precursor solution 211 is coated at the bottom of the pyramid valley by solution methods such as inkjet printing, spraying, spin coating, blade coating, slot coating or screen printing. Taking advantage of the fluidity of the perovskite quantum dot precursor solution 211, the solution accumulates autonomously at the bottom of the pyramid base 100. After annealing, the perovskite quantum dots ABX3 are filled at the bottom of the valley, thus obtaining the perovskite quantum dot layer 21.

[0179] In the step of preparing the perovskite quantum dot layer 21, the annealing treatment is performed at 80℃~150℃ for 10min~30min. The annealing treatment causes the solvent in the perovskite quantum dot precursor solution 211 to evaporate, forming the perovskite quantum dot layer 21. This annealing treatment helps to maintain the structural stability between the perovskite quantum dot material and the ligands distributed on its surface, and avoids damage to the structure of the perovskite quantum dot material.

[0180] The lead halide framework layer 221 prepared by the above-mentioned evaporation rate ratio has a high degree of density. The perovskite quantum dot layer 21 replaces the lead halide framework layer 221 to fill the valley bottom. The cation solution 222 can also easily diffuse to the valley bottom of the lead halide framework layer 221, effectively reducing the residual lead iodide reaction at the bottom of the highly dense lead halide framework layer 221, improving the reaction degree of the lead halide framework layer 221, and thus improving the crystal quality of the perovskite layer 200.

[0181] Using a perovskite quantum dot layer 21 and valley tips as the substrate 100 for preparing the lead halide framework layer 221, a dual-source co-evaporation process was employed to co-deposit lead iodide and cesium bromide on the surface of the substrate 100. The deposition rate ratio of lead iodide to cesium bromide was 5:1 to 10:1. The lead halide framework layer 221 grew conformally along the surface of the substrate 100. Then, controlling the ambient humidity to be less than 5%RH to 40%RH and the temperature to be 25°C, a cationic solution 222 was coated onto the surface of the lead halide framework layer 221 using spin coating or slot coating. After reaction, the aforementioned two-dimensional to three-dimensional perovskite layer 22 was obtained.

[0182] In some embodiments, the perovskite solar cell is a perovskite-silicon tandem solar cell, and the method for preparing the perovskite solar cell further includes the following steps:

[0183] Substrate 100: A texturized silicon bottom cell 11 is provided, a composite layer 12 is prepared on the texturized silicon bottom cell 11, and a first transport layer 13 is prepared on the composite layer 12;

[0184] Preparation of perovskite layer: A perovskite layer 200 is prepared on substrate 100, and the perovskite layer 200 is stacked on the surface of the first transport layer 13.

[0185] Fabrication of the second transport layer 400: The second transport layer 400 is fabricated on the perovskite layer 200, wherein one of the first transport layer 13 and the second transport layer 400 is an electron transport layer and the other is a hole transport layer.

[0186] Fabrication of transparent electrode layer 600: A transparent electrode layer 600 is fabricated on the second transport layer 400;

[0187] A perovskite solar cell was obtained by preparing a positive electrode 700 and a negative electrode 800.

[0188] It should be noted that one of the first transport layer 13 and the second transport layer 400 is an electron transport layer and the other is a hole transport layer. That is, when the first transport layer 13 is an electron transport layer, the second transport layer 400 is a hole transport layer, and when the first transport layer 13 is a hole transport layer, the second transport layer 400 is an electron transport layer.

[0189] In some embodiments, the composite layer 12 is fabricated by magnetron sputtering; and / or, the hole transport layer is fabricated by physical vapor deposition or evaporation; and / or, the electron transport layer is fabricated by evaporation; and / or, the transparent electrode layer 600 is fabricated by magnetron sputtering, and the positive electrode 700 is fabricated by evaporation; and / or, the negative electrode 800 is fabricated by evaporation.

[0190] In some embodiments, a hole-modifying layer 14 is prepared between the hole transport layer and the perovskite layer 200, and the hole-modifying layer 14 is prepared by a solution method; and / or, a passivation layer 300 is also prepared between the perovskite layer 200 and the electron transport layer, and the passivation layer 300 is prepared by an evaporation method; and / or, a buffer layer 500 is also prepared between the electron transport layer and the transparent electrode layer 600, and the buffer layer 500 is prepared by an atomic deposition method; and / or, an antireflection layer 900 is prepared on the side of the transparent electrode layer 600 away from the textured silicon bottom cell 11, and the antireflection layer 900 is prepared by an evaporation method.

[0191] In some embodiments, the perovskite solar cell is a single-junction perovskite solar cell, and the fabrication method of the perovskite solar cell further includes the following steps:

[0192] Fabrication of substrate 100: Provide a textured transparent electrode layer, and fabricate a first transport layer 13 on the textured transparent electrode layer;

[0193] Preparation of perovskite layer 200: The perovskite layer 200 is prepared on substrate 100, and the perovskite layer 200 is stacked on the surface of the first transport layer 13.

[0194] Fabrication of the second transport layer 400: The second transport layer 400 is fabricated on the perovskite layer 200, wherein one of the first transport layer 13 and the second transport layer 400 is an electron transport layer and the other is a hole transport layer.

[0195] Positive electrode 700 and negative electrode 800 were prepared to obtain a perovskite solar cell.

[0196] It should be noted that one of the first transport layer 13 and the second transport layer 400 is an electron transport layer and the other is a hole transport layer. That is, when the first transport layer 13 is an electron transport layer, the second transport layer 400 is a hole transport layer, and when the first transport layer 13 is a hole transport layer, the second transport layer 400 is an electron transport layer.

[0197] Thirdly, embodiments of the present invention provide a photovoltaic module, which includes the perovskite solar cell described in the first aspect or the perovskite solar cell prepared by the preparation method described in the second aspect.

[0198] The technical solution of the present invention will be further described below with reference to more specific embodiments and accompanying drawings.

[0199] Example 1

[0200] A perovskite solar cell, comprising:

[0201] Substrate 100: A heterojunction base cell with a pyramid textured surface, the height of which is 2-3 μm. A composite layer 12 is stacked on the front side of the heterojunction base cell. The composite layer 12 is made of indium tin oxide and has a thickness of 25 nm. A hole transport layer is stacked on the side of the composite layer 12 away from the textured silicon base cell 11. The hole transport layer is made of nickel oxide and has a thickness of 25 nm. A hole modification layer 14 is stacked on the side of the hole transport layer away from the textured silicon base cell 11. The hole modification layer 14 is made of 2PACz and is a monolayer. The heterojunction base cell has a pyramid textured structure. The composite layer 12, hole transport layer, and hole modification layer 14 on the heterojunction base cell are all grown conformally along the pyramid shape of the heterojunction base cell, so that the substrate has valleys and troughs.

[0202] Perovskite layer 200: Perovskite layer 200 is stacked on the surface of hole-modified layer 14, including perovskite quantum dot layer 21 and two-dimensional-three-dimensional perovskite layer 22. The material of perovskite quantum dot layer 21 is perovskite quantum dots MAPbI3 with ligands distributed on the surface. The ligand is trioctylphosphine. The thickness of perovskite quantum dot layer 21 is 250 nm. Perovskite quantum dot layer 21 has an inverted pyramid structure and fills the valley bottoms. Two-dimensional-three-dimensional perovskite layer 22 covers perovskite quantum dot layer 21 and valley peaks. Two-dimensional-three-dimensional perovskite layer 22 includes two-dimensional perovskite layer 223 and three-dimensional perovskite layer 224. Two-dimensional perovskite layer 223 is formed by reacting the surface ligands of quantum dot perovskite layer 200, lead iodide framework layer and cation solution 222. Three-dimensional perovskite layer 224 is formed by reacting lead iodide framework layer and cation solution 222. The thickness of the two-dimensional-three-dimensional perovskite layer 22 is 700 nm. The thickness of the two-dimensional perovskite layer 223 is located in the flat part 226 and is 50 nm. The thickness of the lead iodide framework layer is 480 nm. In the cation solution 222, the concentrations of formamidine iodoformin are 0.45 mol / L, methyl bromide is 0.15 mol / L, methyl chloroformide is 0.1 mol / L, formamidine iodoformin is 0.3 mol / L, methyl chloroformin is 0.1 mol / L, and methyl bromide is 0.1 mol / L. The solvent of the cation solution 222 is anhydrous ethanol.

[0203] Passivation layer 300: Stacked on the side of the perovskite layer 200 away from the textured silicon bottom cell 11. The material of the passivation layer 300 is lithium fluoride, and the thickness is 1nm.

[0204] Electron transport layer: Stacked on the side of passivation layer 300 away from the textured silicon substrate 11, the electron transport layer is made of C. 60 The thickness is 22.5nm.

[0205] Buffer layer 500: Stacked on the side of the electron transport layer away from the textured silicon bottom cell 11, the material of buffer layer 500 is tin dioxide and the thickness is 25nm.

[0206] Transparent electrode layer 600: Stacked on the side of buffer layer 500 away from the textured silicon bottom cell 11. The material of transparent electrode layer 600 is indium tin oxide and the thickness is 100nm.

[0207] Antireflection layer 900: Stacked on the side of transparent electrode layer 600 away from the textured silicon bottom cell 11. The material of antireflection layer 900 is magnesium fluoride, and the thickness is 110nm.

[0208] The perovskite layer 200 is not completely shape-preserving. The passivation layer 300, electron transport layer, buffer layer 500, transparent electrode layer 600 and antireflection layer 900 that are subsequently prepared grow shape-preservingly along the structure of the perovskite layer 200.

[0209] Positive electrode 700 and negative electrode 800: Both positive electrode 700 and negative electrode 800 are silver electrodes. The thickness of positive electrode 700 and negative electrode 800 is 275nm. Positive electrode 700 forms an ohmic contact with transparent electrode layer 600, and negative electrode 800 forms an ohmic contact with heterojunction bottom cell.

[0210] This application also provides a method for preparing the above-mentioned perovskite solar cell, including the following steps:

[0211] Preparation of substrate 100: Provide a heterojunction bottom cell with a pyramidal textured surface, prepare a composite layer 12 on the front side of the heterojunction bottom cell by magnetron sputtering, prepare a hole transport layer on the composite layer 12 by physical vapor deposition, and prepare a hole modification layer 14 on the hole transport layer by solution spin coating to obtain a substrate with valley bottom and valley top.

[0212] Preparation of perovskite layer 200: Perovskite layer 200 includes titanium quantum dot layer 21 and two-dimensional-three-dimensional perovskite layer 22. The above-mentioned substrate 100 is used as the growth substrate of perovskite layer 200. The preparation method of titanium quantum dot layer 21 is as follows: Take perovskite quantum dot precursor solution 211 and use the slit coating method to coat perovskite quantum dot precursor solution 211 on the side of hole modification layer 14 away from the heterojunction bottom cell. Utilizing the fluidity of perovskite quantum dot precursor solution 211, perovskite quantum dot precursor solution 211 accumulates autonomously at the bottom of the hole modification layer 14. Then, anneal at 115°C for 22 min to obtain perovskite quantum dot layer 21. This perovskite quantum dot layer 21 fills the bottom of the valley and does not cover the top of the valley.

[0213] The preparation method of the two-dimensional-three-dimensional perovskite layer 22 is as follows: Using the surface of the perovskite quantum dot layer 21 and the valley tip surface as substrate 100, lead iodide and cesium bromide are deposited using a dual-source co-evaporation process, with the evaporation rate ratio controlled at 5:1 to 10:1, to obtain a lead iodide framework layer covering the surface of the perovskite quantum dot layer 21 and the valley tip surface. Under controlled ambient humidity of 10% and temperature of 25℃, the aforementioned cationic solution 222 is spin-coated onto the lead iodide framework layer. The ambient humidity is then controlled at 10%, and the layer is annealed at 150℃ for 22 minutes. This allows the ligands on the surface of the quantum dot perovskite layer 200 to penetrate into the lead iodide framework layer at the interface. These ligands react with the lead iodide framework layer and the cationic solution 222 to form a two-dimensional perovskite. The remaining lead iodide framework layer and the cationic solution 222 react to form a three-dimensional perovskite, ultimately yielding the desired result. Figure 5 The two-dimensional-three-dimensional perovskite layer 22 is shown;

[0214] Preparation of passivation layer 300: Passivation layer 300 is prepared on perovskite layer 200 by vapor deposition;

[0215] Preparation of electron transport layer: An electron transport layer was prepared on passivation layer 300 by vapor deposition;

[0216] Preparation of buffer layer 500: Buffer layer 500 is prepared on the electron transport layer by atomic deposition.

[0217] Preparation of transparent electrode layer 600: Transparent electrode layer 600 is prepared on buffer layer 500 by magnetron sputtering;

[0218] Preparation of positive electrode 700 and negative electrode 800: positive electrode 700 is deposited on transparent electrode layer 600 to form ohmic contact between positive electrode 700 and transparent electrode layer 600; negative electrode 800 is deposited on the back of heterojunction bottom cell to form ohmic contact between negative electrode 800 and heterojunction bottom cell.

[0219] Preparation of antireflection layer 900: Antireflection layer 900 is prepared on transparent electrode layer 600 by vapor deposition.

[0220] Example 2

[0221] This application provides a perovskite solar cell, which differs from Embodiment 1 in that the thickness of the perovskite quantum dot layer 21 is 100 nm, while the rest remains the same as Embodiment 1.

[0222] Example 3

[0223] This application provides a perovskite solar cell, which differs from Embodiment 1 in that the thickness of the perovskite quantum dot layer 21 is 200 nm, the thickness of the two-dimensional perovskite layer 223 is 10 nm, and the rest is the same as Embodiment 1.

[0224] Example 4

[0225] This application provides a perovskite solar cell, which differs from Embodiment 1 in that the thickness of the perovskite quantum dot layer 21 is 350 nm and the thickness of the two-dimensional perovskite layer 223 is 30 nm, while the rest remains the same as Embodiment 1.

[0226] Example 5

[0227] This application provides a perovskite solar cell, which differs from Embodiment 1 in that the thickness of the perovskite quantum dot layer 21 is 500 nm and the thickness of the two-dimensional perovskite layer 223 is 80 nm, while the rest remains the same as Embodiment 1.

[0228] Comparative Example 1

[0229] This application provides a perovskite solar cell, which differs from Embodiment 1 in that: no perovskite quantum dot layer 21 is prepared, such as... Figure 1 As shown, the preparation method of the perovskite layer 200 is as follows:

[0230] Preparation of perovskite layer 200: Lead iodide and cesium bromide were deposited by dual-source co-evaporation process, and the evaporation rate ratio was controlled at 5:1 to 10:1 to obtain a 480 nm lead iodide framework layer. Under the control of 10% humidity and 25°C, the above-mentioned cationic solution 222 was spin-coated on the lead iodide framework layer. The humidity was then controlled at 10%, and the layer was annealed at 150°C for 22 min to obtain a perovskite layer 200 with a thickness of 700 nm. The rest was the same as in Example 1.

[0231] Comparative Example 2

[0232] This application provides a perovskite solar cell, which differs from Embodiment 1 in that a 250nm ordinary perovskite layer is used instead of the 250nm perovskite quantum dot layer 21. The rest remains the same as in Embodiment 1. The preparation method of the ordinary perovskite layer is as follows:

[0233] Take perovskite precursor solution FA 0.5 MA 0.5 Pb 0.4 Sn 0.6 (I 0.1 Br 0.9 3. Using the slit coating method, the perovskite precursor solution is coated on the side of the hole modification layer 14 away from the heterojunction bottom cell. Taking advantage of the fluidity of the perovskite precursor solution, the perovskite precursor solution accumulates autonomously at the bottom of the hole modification layer 14. Then, it is annealed at 115°C for 22 min to obtain a common perovskite layer.

[0234] Experiment 1

[0235] The performance of perovskite solar cells was tested using the Wavelabs solar simulator under the following conditions: AM1.5, 1000 W / m. 2 The test environment temperature was 25℃. Before testing, the light source was calibrated to simulate sunlight intensity using a standard silicon cell. Performance tests included energy conversion efficiency, open-circuit voltage, short-circuit current, and fill factor.

[0236] The test results of the above embodiments and comparative perovskite solar cells are shown in Table 1.

[0237] Table 1

[0238]

[0239] As can be seen from the data in Table 1, the short-circuit current of Example 1 is 0.21 mA / cm higher than that of Comparative Example 1. 2The open-circuit voltage was 0.023V higher than that of the control group, the fill factor was 8.45% higher, and the energy conversion efficiency was 3.64% higher, proving that the material of the pre-deposited perovskite layer was perovskite quantum dot material. The overall quality of the perovskite layer was improved, which led to a significant improvement in the short-circuit current, open-circuit voltage, fill factor, and energy conversion efficiency of the perovskite solar cell.

[0240] Compared to Comparative Example 2, the short-circuit current of Example 1 is 0.13 mA / cm lower. 2 The open-circuit voltage was 0.038V lower than that of the control group, the fill factor was 4.83% higher, and the energy conversion efficiency was 0.98% higher. This demonstrates that pre-depositing a perovskite quantum dot layer during the preparation of the perovskite layer can reduce defects in the perovskite layer and improve electron transport. Although the short-circuit current and open-circuit voltage of the perovskite solar cell are reduced to some extent, the fill factor is significantly improved, and the energy conversion efficiency is significantly enhanced.

[0241] A comparison of the data from Examples 1, 2, 3, 4, and 5 shows that the energy conversion efficiency of Examples 3 and 4 is further improved, while that of Examples 1, 2, and 5 is relatively lower. This demonstrates that when the thickness of the perovskite quantum dots and the thickness of the two-dimensional perovskite layer are within a specific range, the perovskite layer can balance stability and electron transport performance.

[0242] The perovskite solar cells, their fabrication methods, and photovoltaic modules disclosed in the embodiments of this invention have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this invention. The descriptions of the embodiments above are only for the purpose of helping to understand the perovskite solar cells, their fabrication methods, and photovoltaic modules of this invention, as well as their core ideas. Furthermore, for those skilled in the art, based on the ideas of this invention, there will be changes in the specific implementation methods and application scope. Therefore, the content of this specification should not be construed as a limitation of this invention.

Claims

1. A perovskite solar cell, characterized in that: This perovskite solar cell includes: The base has a velvety surface structure, which has valley peaks and valley bottoms; The perovskite layer comprises a perovskite quantum dot layer and a two-dimensional to three-dimensional perovskite layer. The perovskite quantum dot layer fills the valley bottom. The perovskite quantum dot layer comprises perovskite quantum dots ABX3, where A is one of formamidinium, methylamine, or cesium, B is Pb, and X is one of I, Br, or Cl. Ligands are distributed on the surface of the perovskite quantum dots. The ligands are one or more combinations of L-type ligands, S-type ligands, and Z-type ligands. The L-type ligands include Lewis bases, the S-type ligands include one or more of ammonium salts, free radicals, or zwitterionic molecules, and the Z-type ligands include Lewis acids. The two-dimensional to three-dimensional perovskite layer comprises a two-dimensional perovskite layer stacked on the perovskite quantum dot layer and a three-dimensional perovskite layer stacked on the two-dimensional perovskite layer. The two-dimensional perovskite layer is obtained by reacting a lead halide framework layer, ligands, and a cation solution. The three-dimensional perovskite layer is obtained by reacting a lead halide framework layer and a cation solution.

2. The perovskite solar cell according to claim 1, characterized in that: The L-type ligand includes one or both of trioctylphosphine and trioctylphosphine oxide; and / or The S-type ligands include one or more of the following: polyetheramine, polyphthalamide, 4-trifluoromethylphenethylamine iodide, bis(dodecyl dimethyl ammonium halide), dodecenyl succinic anhydride, hexadecyl trimethyl ammonium bromide, 5,5'-dithiobis(2-nitrobenzoic acid), 4-dibutylaminoketone acid, bis(2,4,4-trimethylpentyl)phosphonic acid, phthalaldehyde, dodecylbenzenesulfonic acid, nonenyl succinic anhydride, diethylenetriamine hydrochloride, 1,3-adamantanediamine, 2,3-anthracitedicarboxaldehyde, iminodiacetic acid, ethylenediaminetetraacetic acid, ammonium thiocyanate, sodium thiocyanate, 3,5-diamino-1,2,4-triazole, carboxyl, phosphate, sulfonic acid, and thiol groups. And / or, the Z-type ligand includes Na + Alkali metal salts and K + One or two of the alkali metal salts.

3. The perovskite solar cell according to claim 1, characterized in that: The two-dimensional-three-dimensional perovskite layer covers the perovskite quantum dot layer and the valley tip. The textured structure is a pyramid structure. The perovskite quantum dot layer filling the valley bottom has an inverted pyramid shape. The two-dimensional-three-dimensional perovskite layer includes alternating peaks and flat sections. The peaks are located above the valley tips and their shapes match those of the valley tips. The flat sections are located above the perovskite quantum dot layer.

4. The perovskite solar cell according to claim 1, characterized in that: The thickness of the perovskite quantum dot layer is 100 nm to 500 nm, and the thickness of the two-dimensional to three-dimensional perovskite layer is 500 nm to 1000 nm.

5. The perovskite solar cell according to claim 1, characterized in that: The lead halide framework layer includes alternating sharp and flat framework portions, the sharp framework portions being located above the valley tips and matching the shape of the valley tips, and the flat framework portions being located above the perovskite quantum dot layer; and / or, the thickness of the lead halide framework layer is 350 nm to 800 nm.

6. The perovskite solar cell according to claim 3, characterized in that: The two-dimensional perovskite layer is located in the flattened portion, and the thickness of the two-dimensional perovskite layer is 10 nm to 100 nm.

7. The perovskite solar cell according to claim 1, characterized in that: The perovskite solar cell has a nip structure or a pin structure.

8. The perovskite solar cell according to claim 1, characterized in that: The lead halide framework layer comprises lead iodide and cesium bromide; and / or, The solute in the cationic solution includes one or more of iodoformamidine, bromoformamidine, chloroformamidine, iodoformamine, bromoformamine, and chloroformamine; and / or, The solvent for the cationic solution includes one or both of anhydrous ethanol and isopropanol.

9. The perovskite solar cell according to claim 8, characterized in that: In the cationic solution, the concentration of formamidinium iodoformide is 0.3 mol / L to 0.6 mol / L, the concentration of methyl bromide is 0 mol / L to 0.2 mol / L, the concentration of methyl chloroformide is 0 mol / L to 0.15 mol / L, the concentration of formamidinium iodoformide is 0 mol / L to 0.6 mol / L, the concentration of methyl bromide is 0 mol / L to 0.2 mol / L, and the concentration of methyl bromide is 0 mol / L to 0.2 mol / L.

10. The perovskite solar cell according to claim 1, characterized in that: The perovskite solar cell is a perovskite-silicon tandem solar cell. The substrate includes a texturized silicon substrate cell and a composite layer and a first transport layer sequentially stacked on the texturized silicon substrate cell. The perovskite layer is stacked on the surface of the first transport layer. The perovskite solar cell further includes: A second transport layer stacked on the perovskite layer on the side of the texturized silicon substrate cell away from the cell. A transparent electrode layer stacked on the side of the second transport layer facing away from the textured silicon substrate cell; One of the first transport layer and the second transport layer is an electron transport layer, and the other is a hole transport layer; It also includes a positive electrode and a negative electrode, wherein the positive electrode forms an ohmic contact with the transparent electrode layer and the negative electrode forms an ohmic contact with the texturized silicon bottom cell.

11. The perovskite solar cell according to claim 10, characterized in that: The texturized silicon substrate solar cell includes one or more of the following: emitter passivation and back contact cell, tunnel oxide passivation contact cell, heterojunction cell, heterojunction back contact crystalline silicon cell, and tunnel oxide passivation back contact cell; and / or, The composite layer is made of one or both of indium tin oxide and indium zinc oxide; the hole transport layer is made of one or more of nickel oxide, cuprous oxide, Spiro-TTB, and cuprous thiocyanate; and / or, The material of the electron transport layer includes C. 60 ; and / or, The material of the transparent electrode layer includes one or both of indium tin oxide and indium zinc oxide.

12. The perovskite solar cell according to claim 11, characterized in that: The thickness of the composite layer is 20 nm to 30 nm; and / or, The thickness of the hole transport layer is 20 nm to 30 nm; and / or, The thickness of the electron transport layer is 10 nm to 30 nm; and / or, The thickness of the transparent electrode layer is 80 nm to 120 nm.

13. The perovskite solar cell according to claim 11, characterized in that: The perovskite solar cell also includes: A hole-modifying layer, wherein the hole-modifying layer is located between the hole transport layer and the perovskite layer; and / or, A passivation layer, wherein the passivation layer is located between the perovskite layer and the electron transport layer; and / or, A buffer layer, wherein the buffer layer is located between the electron transport layer and the transparent electrode layer; and / or, An antireflection layer is located on the side of the transparent electrode layer opposite to the fabrication of the texturized silicon substrate cell.

14. The perovskite solar cell according to claim 13, characterized in that: The hole-modifying layer is made of nickel oxide, 2PACz, 4PACz, Meo-2PACz, Meo-4PACz; and / or, The passivation layer is made of lithium fluoride; and / or, The buffer layer is made of tin dioxide; and / or, The antireflective layer is made of one or both of magnesium fluoride and lithium fluoride.

15. The perovskite solar cell according to claim 13, characterized in that: The hole-modified layer is a monolayer; and / or, The passivation layer has a thickness of 1 nm to 5 nm; and / or, The thickness of the buffer layer is 20 nm to 30 nm; and / or, The thickness of the antireflective layer is 80 nm to 120 nm.

16. The perovskite solar cell according to claim 1, characterized in that: The perovskite solar cell is a single-junction perovskite solar cell. The substrate includes a textured transparent electrode layer and a first transport layer stacked on the textured transparent electrode layer. The perovskite layer is stacked on the surface of the first transport layer. The perovskite solar cell further includes: A second transport layer is stacked on the side of the perovskite layer away from the textured transparent electrode layer, wherein one of the first transport layer and the second transport layer is an electron transport layer and the other is a hole transport layer; It also includes a positive electrode and a negative electrode, wherein the positive electrode forms an ohmic contact with the second transport layer and the negative electrode forms an ohmic contact with the textured transparent electrode layer.

17. A method for preparing a perovskite solar cell, characterized in that: Includes the following steps: Provide a substrate: the surface of the substrate has a velvety structure, the velvety structure having valley peaks and valley bottoms; Preparation of perovskite quantum dot layer: Perovskite quantum dots ABX3 are filled into the valley bottom, and the perovskite quantum dot layer is obtained after annealing; Preparation of two-dimensional-three-dimensional perovskite layer: A lead halide framework layer is prepared on the perovskite quantum dot layer and the valley tip, a cationic solution is coated on the lead halide framework layer, and a two-dimensional-three-dimensional perovskite layer is formed after annealing.

18. The method for preparing a perovskite solar cell according to claim 17, characterized in that: The perovskite quantum dot layer is deposited via a solution method, including any one of spin coating, blade coating, spray coating, or slot coating, followed by annealing; and / or The lead halide framework layer is prepared by a dual-source co-evaporation process using lead iodide and cesium bromide, wherein the evaporation rate ratio of lead iodide to cesium bromide is 5:1 to 10:1; and / or, Methods for applying the cationic solution include spin coating and slot coating; The annealing temperature for preparing the perovskite quantum dot layer is 80℃~120℃, and the annealing time is 10 min~30 min; and / or, The coating environment for the cationic solution requires a humidity of less than 10% RH and a temperature of 25°C; and / or, The annealing process for preparing the two-dimensional to three-dimensional perovskite layer was carried out at a humidity of 5%RH~40%RH and an annealing temperature of 100℃~170℃ for 15min~30min.

19. The method for preparing a perovskite solar cell according to claim 17, characterized in that: The perovskite solar cell is a perovskite-silicon tandem solar cell, and the preparation method of the perovskite solar cell further includes the following steps: Preparation of the substrate: A texturized silicon substrate cell is provided, a composite layer is prepared on the texturized silicon substrate cell, and a first transport layer is prepared on the composite layer; Preparation of the perovskite layer: The perovskite layer is prepared on the substrate, and the perovskite layer is stacked on the surface of the first transport layer; Fabrication of a second transport layer: A second transport layer is fabricated on the perovskite layer, wherein one of the first transport layer and the second transport layer is an electron transport layer and the other is a hole transport layer; Fabrication of a transparent electrode layer: The transparent electrode layer is fabricated on the second transport layer; A positive electrode and a negative electrode are prepared to obtain the perovskite solar cell.

20. The method for preparing a perovskite solar cell according to claim 19, characterized in that: The composite layer is prepared by magnetron sputtering; and / or, the hole transport layer is prepared by physical vapor deposition or evaporation; and / or, the electron transport layer is prepared by evaporation; and / or, the transparent electrode layer is prepared by magnetron sputtering and the positive electrode is prepared by evaporation; and / or, the negative electrode is prepared by evaporation.

21. The method for preparing a perovskite solar cell according to claim 19, characterized in that: A hole-modifying layer is prepared between the hole transport layer and the perovskite layer, and the hole-modifying layer is prepared by a solution method; and / or, a passivation layer is further prepared between the perovskite layer and the electron transport layer, and the passivation layer is prepared by an evaporation method; and / or, a buffer layer is further prepared between the electron transport layer and the transparent electrode layer, and the buffer layer is prepared by an atomic deposition method; and / or, an antireflection layer is prepared on the side of the transparent electrode layer away from the textured silicon substrate, and the antireflection layer is prepared by an evaporation method.

22. The method for preparing a perovskite solar cell according to claim 17, characterized in that: The perovskite solar cell is a single-junction perovskite solar cell, and the preparation method of the perovskite solar cell further includes the following steps: Preparation of the substrate: A textured transparent electrode layer is provided, and a first transport layer is prepared on the textured transparent electrode layer; Preparation of the perovskite layer: The perovskite layer is prepared on the substrate, and the perovskite layer is stacked on the surface of the first transport layer; Fabrication of a second transport layer: A second transport layer is fabricated on the perovskite layer, wherein one of the first transport layer and the second transport layer is an electron transport layer and the other is a hole transport layer; Fabrication of a transparent electrode layer: The transparent electrode layer is fabricated on the second transport layer; A positive electrode and a negative electrode are prepared to obtain the perovskite solar cell.

23. A photovoltaic module, characterized in that, This includes the perovskite solar cell according to any one of claims 1-16 or the perovskite solar cell prepared by any one of claims 17-22.

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