A hydrophilic diamond wire and a method for manufacturing the same

Abstract

The application discloses a hydrophilic diamond wire and a preparation method thereof, and the method comprises the following steps: pretreating a wire base material; electroplating the surface of the pretreated wire base material to form a plating layer with diamond particles; performing triple water washing on the wire body after electroplating; forming a hydrophilic layer on the surface of the wire body after triple water washing by using prepared infiltration liquid through infiltration or coating method, so as to reduce the contact angle between the diamond wire and the cutting liquid; and performing post-treatment on the wire body with the prepared hydrophilic layer to obtain the hydrophilic diamond wire. In the process of preparing the diamond wire, the infiltration liquid serving as a surfactant is adhered to the surface of the plating layer, so that the contact angle between the diamond wire and the cutting liquid can be reduced, the liquid carrying capacity of the diamond wire can be improved, the chip removal capacity of the diamond wire can be improved, the blank in the aspect of previously producing the diamond wire is filled, and the prepared diamond wire can be compatible with the existing diamond wire preparation process.

Description

Technical Field

[0001] This invention belongs to the field of diamond wire preparation technology, specifically relating to a hydrophilic diamond wire and its preparation method. Background Technology

[0002] The primary application of diamond wire is in the cutting and processing of high-hardness and brittle materials, with the cutting of photovoltaic crystalline silicon wafers accounting for the majority. Silicon is an extremely brittle material, and cutting silicon wafers is not a simple cutting process; it also involves other physical changes, such as silicon grain peeling and fragmentation, and plastic deformation. For these reasons, silicon wafers are prone to breakage during cutting, making it difficult to improve product quality. When silicon wafers are cut using diamond wire saws, the process has undergone a qualitative leap. Diamond wire saws offer high cutting efficiency, low silicon material loss, high wafer yield, and less environmental pollution, improving product quality while reducing operating costs. Because finer diamond wire saws and smaller dielectric particle sizes are more conducive to improving silicon wafer quality and further reducing cutting losses and production costs, in recent years, to meet the trend of thinner photovoltaic cell wafers, diamond wire has been continuously developing finer wires. Currently, the finest diamond wire can reach 30μm, meeting the market demand for ultra-thin silicon wafers. However, the thinning of diamond wire also presents certain problems, such as a decrease in the ability of diamond wire to carry liquid and a weakening of its chip removal ability. These issues need to be addressed from other perspectives. Summary of the Invention

[0003] To address the aforementioned problems in the prior art, this invention provides a hydrophilic diamond wire and its preparation method. The technical problem to be solved by this invention is achieved through the following technical solution:

[0004] In a first aspect, embodiments of the present invention provide a method for preparing hydrophilic diamond wire, the method comprising:

[0005] Pretreatment of busbar substrate;

[0006] Electroplating is performed on the surface of the pretreated busbar substrate to form a coating layer with diamond particles bonded together.

[0007] The electroplated line body undergoes a three-stage water wash.

[0008] Using the prepared wetting solution, a hydrophilic layer is formed on the surface of the wire after triple water washing by wetting or coating methods, which is used to reduce the contact angle between the diamond wire and the cutting fluid;

[0009] The prepared hydrophilic layer of the wire is then post-processed to obtain a hydrophilic diamond wire.

[0010] In one embodiment of the present invention, the busbar substrate is made of one of high carbon steel, tungsten, or tungsten-molybdenum alloy; the cross-section of the busbar substrate is circular with a diameter of 20 μm to 40 μm.

[0011] In one embodiment of the present invention, the preprocessing includes, in sequence:

[0012] Ultrasonic degreasing, hot water washing, cold water washing, acid washing, and cold water washing.

[0013] In one embodiment of the present invention, the average particle size of the diamond particles is 3 μm to 8 μm.

[0014] In one embodiment of the present invention, the raw materials used to prepare the wetting solution include:

[0015] One or more of the following: fatty acid methyl ester ethoxylate, Briggs, propylene glycol, polyethylene glycol 200, ethylene glycol 200, and malonic acid.

[0016] In one embodiment of the present invention, the wetting liquid includes:

[0017] A liquid is prepared by dissolving 0.5% to 1% by mass fatty acid methyl ester ethoxylate and 0.1% to 0.3% by mass Briger in pure water at 60°C to 70°C.

[0018] In one embodiment of the present invention, the wetting liquid includes:

[0019] The liquid is prepared by dissolving 0.5% to 1% ethylene glycol 200 and 0.1% to 0.3% malonic acid in pure water at 50°C to 60°C.

[0020] In one embodiment of the present invention, the wetting liquid includes:

[0021] The liquid is prepared by dissolving 0.5% to 1% propylene glycol and 0.5% to 1% polyethylene glycol 200 in pure water at 60°C to 70°C.

[0022] In one embodiment of the present invention, the post-processing includes:

[0023] Air-cutting and drying.

[0024] Secondly, embodiments of the present invention provide a hydrophilic diamond wire, which is obtained according to the preparation method of the hydrophilic diamond wire described in the first aspect, and comprises, from the inside to the outside, a base material, a plating layer and a hydrophilic layer.

[0025] The beneficial effects of this invention are:

[0026] Based on the thinning of diamond wire, and addressing the issues of decreased liquid carrying capacity and weakened chip removal ability of diamond wire, the hydrophilic diamond wire preparation method provided in this embodiment of the invention reduces the contact angle between the diamond wire and the cutting fluid by adhering a wetting liquid as a surfactant to the surface of the plating layer during the diamond wire preparation process. This improves the liquid carrying capacity of the diamond wire and enhances its chip removal ability. This embodiment of the invention fills the gap in previous diamond wire production in this regard, is compatible with existing diamond wire preparation processes, and simplifies the process flow. Attached Figure Description

[0027] Figure 1 This is a schematic flowchart of a method for preparing hydrophilic diamond wire according to an embodiment of the present invention;

[0028] Figure 2 This is a longitudinal sectional view of an existing diamond wire.

[0029] Figure 3 A schematic diagram of existing electroplating processes;

[0030] Figure 4 This is a schematic diagram for understanding contact angle;

[0031] Figure 5 This is a schematic diagram of the hydrophilic diamond wire according to an embodiment of the present invention;

[0032] Figure 6 This is a cross-sectional view of the hydrophilic diamond wire according to an embodiment of the present invention. Detailed Implementation

[0033] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0034] To address the issues of poor liquid carrying capacity and difficulty in chip removal after diamond wire is thinned, this invention provides a hydrophilic diamond wire and its preparation method.

[0035] In a first aspect, embodiments of the present invention provide a method for preparing hydrophilic diamond wire, such as... Figure 1 As shown, the method may include the following steps:

[0036] S1, Pretreatment of busbar substrate;

[0037] Those skilled in the art will understand that a substrate is required as a busbar in the process of preparing diamond, which is referred to as the busbar substrate in this embodiment of the invention.

[0038] In one optional embodiment, the material used for the busbar substrate can be one of high carbon steel, tungsten, or tungsten-molybdenum alloy.

[0039] The cross-section of the busbar substrate is circular. In one optional embodiment, in order to prepare fine diamond wire, the diameter of the busbar substrate can be 20μm to 40μm.

[0040] In this step, the purpose of the pretreatment is to remove oil and oxide layers from the busbar substrate. Simply put, this involves degreasing and derusting to ensure a stronger bond between the subsequent electroplating layer and the busbar substrate. This can be achieved using any existing process capable of achieving the above objective. For example, in one optional embodiment, the pretreatment sequentially includes:

[0041] Ultrasonic degreasing, hot water washing, cold water washing, acid washing, and cold water washing.

[0042] For details on the specific processing procedures for each step, please refer to the relevant technical explanations; they will not be described in detail here.

[0043] S2, electroplating is performed on the surface of the pretreated busbar substrate to form a coating layer with diamond particles bonded together.

[0044] Reference Figure 2 The longitudinal sectional view of the existing diamond wire shown is shown. Figure 2 and Figure 3 In the diagram, 11 represents the busbar; 12 represents the nickel plating layer; and 13 represents the diamond particles. Those skilled in the art will understand that the general structure of a diamond wire is as follows: a layer of nickel is plated onto the surface of the busbar by electroplating, forming a nickel plating layer. Due to the addition of diamond micro-powder to the plating solution, the diamond particles are solidified into the nickel plating layer during the electroplating process. The diamond wire saw cuts by utilizing the portion of the diamond particles that protrude from the surface of the nickel plating layer.

[0045] The coating layer in this embodiment of the invention is similar, with diamond particles embedded in the coating layer and at least partially protruding from the surface of the coating layer.

[0046] In one optional embodiment, the coating layer may be made of a metal of one element selected from Cu, Zn, Ti, and Ni, or a metal alloy of several or more elements.

[0047] In one optional embodiment, the average particle size of the diamond particles is 3μm to 8μm. It is understood that the size of the diamond particles selected in this embodiment is adapted to the diameter of the selected busbar substrate.

[0048] In one optional embodiment, the surface of the diamond particle may be uncoated, or it may be coated with any one of nickel-phosphorus alloy, titanium-tungsten alloy, or copper-zinc alloy as a protective layer.

[0049] In one possible implementation of the electroplating process performed in this step, a continuous electroplating process can be used.

[0050] Specifically, the continuous electroplating process can sequentially include three steps: pre-plating, sandblasting, and thickening.

[0051] by Figure 2 Taking the diamond wire shown as an example, in the pre-plating process, the plating solution does not contain diamond particles; only a layer of nickel is plated onto the busbar. In the sandblasting process, the plating solution contains diamond particles, which are then fixed within the nickel layer during electroplating. In the thickening process, the plating solution does not contain diamond particles; the purpose is to thicken the already formed nickel plating layer to further encapsulate the diamond particles. For details, please refer to... Figure 3 The diagram shows the electroplating process and related technical explanations. In the diagram, a, b, and c represent the three processes of pre-plating, sandblasting, and thickening, respectively. Further details are not provided here.

[0052] It is understandable that the three processes of pre-plating, sandblasting, and thickening all require a certain current density, which can be set as needed and is not limited here. For example, in one possible implementation, the current density used in the electroplating process is in the range of 10 to 50 A / dm2.

[0053] S3, perform a triple water wash on the electroplated line;

[0054] Those skilled in the art will understand that a triple wash involves three consecutive washes to ensure that the product surface is clean before proceeding to the next process. Specific procedures can be found in relevant technical documents and will not be described in detail here.

[0055] S4. Using the prepared wetting solution, a hydrophilic layer is formed on the surface of the wire after triple water washing by wetting or coating methods to reduce the contact angle between the diamond wire and the cutting fluid.

[0056] To facilitate understanding of the embodiments of the present invention, a brief introduction to the relevant concepts is given below.

[0057] The contact angle refers to the angle between the solid-liquid interface, through the liquid interior, and at the interface between the solid, liquid, and gas phases. (See also: [link to relevant documentation]). Figure 4 As shown in θ, a larger contact angle indicates greater hydrophobicity, while a smaller contact angle indicates greater hydrophilicity.

[0058] Cutting fluid refers to the liquid medium used when cutting silicon wafers with diamond wire; its functions include cooling and chip removal. The inventors discovered that when the contact angle between the diamond wire and the cutting fluid decreases, it becomes more hydrophilic, allowing the diamond wire to carry more cutting fluid into the kerf during silicon wafer cutting, thus improving fluid carrying capacity. Since the cutting fluid contains cleaning agents and wetting agents, more cutting fluid in the kerf can remove more silicon grains, commonly known as cutting debris, generated during wafer cutting, thereby improving chip removal efficiency.

[0059] Therefore, based on the above concept, the present invention pre-prepares an impregnation liquid to make it hydrophilic, so that the impregnation liquid can be used to form a hydrophilic layer on the surface of the diamond wire, thereby reducing the contact angle between the diamond wire and the cutting fluid, thereby improving the fluid carrying capacity and chip removal capacity.

[0060] Specifically, in this embodiment of the invention, after preparing the wetting solution, the yarn after triple washing can be immersed in the wetting solution, or the wetting solution can be coated on the surface of the yarn after triple washing, so that the surface of the yarn after triple washing is covered with the wetting solution, and after drying, a hydrophilic thin film layer is formed, referred to as the hydrophilic layer.

[0061] In one optional embodiment, the raw materials used to prepare the wetting solution include:

[0062] One or more of the following: fatty acid methyl ester ethoxylate, Briggs, propylene glycol, polyethylene glycol 200, ethylene glycol 200, and malonic acid.

[0063] The following are some examples of experimental preparation of wetting solutions.

[0064] (i) Preparation of wetting solution using fatty acid methyl ester ethoxylate and / or Briggs

[0065] In the specific experiment, a certain mass percentage of fatty acid methyl ester ethoxylate and / or Briggs was used to prepare wetting solutions by dissolving them in pure water at different temperatures. This was used to prepare hydrophilic diamond wires and conduct contact angle tests. The results are shown in Table 1 below. The temperature corresponding to the pure water is the preparation temperature.

[0066] Table 1. Experimental data on the preparation of wetting solutions using fatty acid methyl ester ethoxylates and / or Briggs.

[0067] 1 0.5％～1％ / 50 35 2 0.5％～1％ / 60 38 3 2％ / 60 40 4 / 0.5％～1％ 50 55 5 / 0.5％～1％ 70 50 6 0.5％～1％ 0.5％～1％ 60 30 7 0.5％～1％ 0.1％～0.3％ 60 20 8 0.5％～1％ 0.1％～0.3％ 70 22

[0068] It can be seen that the contact angles corresponding to the two wetting solutions numbered 7 and 8 in Table 1 are relatively small. Therefore, in one possible embodiment, the wetting solution includes:

[0069] A liquid is prepared by dissolving 0.5% to 1% by mass fatty acid methyl ester ethoxylate and 0.1% to 0.3% by mass Briger in pure water at 60°C to 70°C.

[0070] Furthermore, the contact angle corresponding to number 7 is the smallest, which can be considered a preferred embodiment when preparing the wetting solution using fatty acid methyl ester ethoxylate and / or Briggs.

[0071] (ii) Preparation of impregnation solution using ethylene glycol 200 and / or malonic acid

[0072] In the specific experiment, a certain mass percentage of ethylene glycol 200 and / or malonic acid was used to prepare an impregnation solution by dissolving it in pure water at different temperatures. The hydrophilic diamond wire was then prepared and the contact angle was tested. The results are shown in Table 2 below.

[0073] Table 2. Experimental data on the preparation of wetting solutions using ethylene glycol 200 and / or malonic acid.

[0074] 1 0.5％～1％ / 50 45 2 0.5％～1％ / 60 48 3 3％ / 60 53 4 / 0.5％～1％ 50 49 5 / 0.5％～1％ 70 50 6 0.5％～1％ 0.5％～1％ 60 30 7 0.5％～1％ 0.1％～0.3％ 50 25 8 0.5％～1％ 0.1％～0.3％ 60 23

[0075] It can be seen that the contact angles corresponding to the two wetting solutions numbered 7 and 8 in Table 2 are relatively small. Therefore, in one possible embodiment, the wetting solution includes:

[0076] The liquid is prepared by dissolving 0.5% to 1% ethylene glycol 200 and 0.1% to 0.3% malonic acid in pure water at 50°C to 60°C.

[0077] Furthermore, the contact angle corresponding to number 8 is the smallest, which can be considered a preferred embodiment when preparing the wetting solution using ethylene glycol 200 and / or malonic acid.

[0078] (III) Preparation of impregnation solution using propylene glycol and / or polyethylene glycol 200

[0079] In the specific experiment, a certain mass percentage of propylene glycol and / or polyethylene glycol 200 was used to prepare an impregnation solution by dissolving it in pure water at different temperatures. The hydrophilic diamond wire was then prepared and the contact angle was tested. The results are shown in Table 3 below.

[0080] Table 3. Experimental data on the preparation of wetting solutions using propylene glycol and / or polyethylene glycol 200.

[0081]

[0082]

[0083] It can be seen that the contact angles corresponding to the two wetting solutions numbered 6 and 8 in Table 3 are relatively small. Therefore, in one possible embodiment, the wetting solution includes:

[0084] The liquid is prepared by dissolving 0.5% to 1% propylene glycol and 0.5% to 1% polyethylene glycol 200 in pure water at 60°C to 70°C.

[0085] Furthermore, the contact angle corresponding to number 8 is the smallest, which can be considered a preferred embodiment when preparing the wetting solution using propylene glycol and / or polyethylene glycol 200.

[0086] In this embodiment of the invention, the hydrophilic layer is prepared by using an impregnation liquid, which is essentially to adhere a surfactant to the surface of the wire after triple washing, thereby changing the surface state of the diamond wire. Due to the hydrophilic properties of the hydrophilic layer, a smaller contact angle will be formed with the cutting liquid when the diamond wire is cut, reducing the surface tension between the diamond wire and the cutting liquid. Therefore, the liquid carrying capacity of the diamond wire can be improved, and its chip removal capacity can also be improved.

[0087] S4. The prepared hydrophilic layer of the wire is post-processed to obtain hydrophilic diamond wire.

[0088] Those skilled in the art will understand that the conventional diamond wire preparation process mainly includes pretreatment, continuous electroplating and post-treatment, among which conventional post-treatment includes three-stage water washing, hot water washing, air cutting and oven drying.

[0089] In one optional implementation, for S4, the post-processing includes:

[0090] Air-cutting and drying.

[0091] The air-cutting process uses dried compressed air to dry the filament after the hydrophilic layer has been prepared. Please refer to the relevant technical explanation for details.

[0092] Optionally, the air pressure range used in the air cutting process can be 0.5 to 1.2 MPa.

[0093] The drying process involves drying the air-cut fabric at a high temperature. Please refer to the relevant technical explanations for details.

[0094] Optionally, the temperature range for the drying process can be 200℃~350℃, etc.

[0095] The method for preparing hydrophilic diamond wire according to the embodiments of the present invention can add a wetting solution to the hot water washing step in the post-processing of the traditional diamond wire preparation process. This allows the diamond wire, after electroplating and completing the three-stage water washing, to be coated with a layer of hydrophilic surfactant after the hot water washing. After curing and drying, a hydrophilic diamond wire is obtained. Therefore, the process steps of the method of the embodiments of the present invention are compatible with the traditional diamond wire preparation process.

[0096] Based on the thinning of diamond wire, and addressing the issues of decreased liquid carrying capacity and weakened chip removal ability of diamond wire, the hydrophilic diamond wire preparation method provided in this embodiment of the invention reduces the contact angle between the diamond wire and the cutting fluid by adhering a wetting liquid as a surfactant to the surface of the plating layer during the diamond wire preparation process. This improves the liquid carrying capacity of the diamond wire and enhances its chip removal ability. The solution of this embodiment of the invention fills the gap in previous diamond wire production in this regard and is compatible with existing diamond wire preparation processes.

[0097] To facilitate understanding of the preparation method of hydrophilic diamond wire provided in the embodiments of the present invention, three specific embodiments are given below. However, it should be noted that these are merely optional implementation methods and do not constitute a limitation on the method of the embodiments of the present invention.

[0098] (1) Example 1

[0099] A method for preparing hydrophilic diamond wire includes the following steps:

[0100] ① Pre-treatment of the busbar substrate is carried out to remove surface oil and oxide layers, etc. Specific processes include ultrasonic degreasing, hot water washing, cold water washing, acid washing and cold water washing.

[0101] ② The surface of the pretreated busbar substrate is electroplated to form a coating layer with diamond particles. The electroplating process is a continuous electroplating process including pre-plating, sanding, and thickening.

[0102] The current density of the pre-plating process is 10 A / dm. 2 The current density for the sand-coating process is 15 A / dm³. 2 The current density for the thickening process is 25 A / dm. 2 .

[0103] ③ Perform a three-stage water wash on the electroplated line;

[0104] ④ The line body after triple water washing is passed through an impregnation tank containing an impregnation solution. The tank has a total capacity of 650L. By mass percentage, the impregnation solution contains 0.5% fatty acid methyl ester ethoxylate and 0.1% Brijer. It is prepared with pure water and heated to 55°C to form a hydrophilic layer on the surface of the line body after triple water washing.

[0105] ⑤ The wire with the hydrophilic layer prepared is then subjected to post-processing, wherein the drying temperature is set to 250℃ to produce a hydrophilic diamond wire with a hydrophilic layer.

[0106] (2) Example 2

[0107] A method for preparing hydrophilic diamond wire includes the following steps:

[0108] ① Pre-treatment of the busbar substrate is carried out to remove surface oil and oxide layers, etc. Specific processes include ultrasonic degreasing, hot water washing, cold water washing, acid washing and cold water washing.

[0109] ② The surface of the pretreated busbar substrate is electroplated to form a coating layer with diamond particles. The electroplating process is a continuous electroplating process including pre-plating, sanding, and thickening.

[0110] The current density of the pre-plating process is 10 A / dm. 2 The current density for the sand-coating process is 15 A / dm³. 2 The current density for the thickening process is 25 A / dm. 2 .

[0111] ③ Perform a three-stage water wash on the electroplated line;

[0112] ④ The line body after triple water washing is passed through an impregnation tank containing an impregnation solution. The tank has a total capacity of 650L. The impregnation solution contains 0.5% ethylene glycol 200 and 0.1% malonic acid by mass percentage. It is prepared with pure water and heated to 55°C to form a hydrophilic layer on the surface of the line body after triple water washing.

[0113] ⑤ The wire with the hydrophilic layer prepared is then subjected to post-processing, wherein the drying temperature is set to 300℃ to produce a hydrophilic diamond wire with a hydrophilic layer.

[0114] (3) Example 3

[0115] A method for preparing hydrophilic diamond wire includes the following steps:

[0116] ① Pre-treatment of the busbar substrate is carried out to remove surface oil and oxide layers, etc. Specific processes include ultrasonic degreasing, hot water washing, cold water washing, acid washing and cold water washing.

[0117] ② The surface of the pretreated busbar substrate is electroplated to form a coating layer with diamond particles. The electroplating process is a continuous electroplating process including pre-plating, sanding, and thickening.

[0118] The current density of the pre-plating process is 10 A / dm. 2 The current density for the sand-coating process is 15 A / dm³. 2 The current density for the thickening process is 25 A / dm. 2 .

[0119] ③ Perform a three-stage water wash on the electroplated line;

[0120] ④ The line body after triple water washing is passed through an impregnation tank containing an impregnation solution. The tank has a total capacity of 650L. The impregnation solution contains 0.5% propylene glycol and 0.5% polyethylene glycol 200 by mass percentage. It is prepared with pure water and heated to 65°C to form a hydrophilic layer on the surface of the line body after triple water washing.

[0121] ⑤ The wire with the hydrophilic layer prepared is then subjected to post-processing, wherein the drying temperature is set to 350℃ to produce a hydrophilic diamond wire with a hydrophilic layer.

[0122] Secondly, embodiments of the present invention also provide a hydrophilic diamond wire, which is prepared according to the preparation method of the hydrophilic diamond wire described in the first aspect, and includes, from the inside to the outside, a base material, a plating layer and a hydrophilic layer.

[0123] For the specific structure, please refer to [link / reference]. Figure 5 and Figure 6 understand. Figure 5 This is a schematic diagram of the hydrophilic diamond wire according to an embodiment of the present invention; Figure 6 This is a cross-sectional view of the hydrophilic diamond wire according to an embodiment of the present invention.

[0124] Figure 5 and Figure 6 In the diagram, 1 represents the busbar substrate; 2 represents the plating layer; 3 represents the hydrophilic layer; and 4 represents the diamond particles.

[0125] For details regarding the specific contents of each layer of this hydrophilic diamond wire, please refer to the relevant content in the first section, which will not be repeated here.

[0126] The hydrophilic diamond wire provided in this invention has a hydrophilic layer on its surface compared to traditional diamond wire. This reduces the contact angle between the diamond wire and the cutting fluid, improves the fluid carrying capacity of the diamond wire, and enhances its chip removal capacity, thus meeting the market's technical requirements for diamond wire.

[0127] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. In addition, those skilled in the art can combine and integrate the different embodiments or examples described in this specification.

[0128] The above description is merely a preferred embodiment of the present invention and is not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention are included within the scope of protection of the present invention.

Claims

1. A method for preparing hydrophilic diamond wire, characterized in that, include: Pretreatment of busbar substrate; Electroplating is performed on the surface of the pretreated busbar substrate to form a coating layer with diamond particles bonded together. The electroplated line body undergoes a three-stage water wash. Using the prepared wetting solution, a hydrophilic layer is formed on the surface of the wire after triple water washing by wetting or coating. The hydrophilic layer is a thin film layer formed by wetting or coating a surfactant solution and then curing and drying it. It is used to reduce the contact angle between the diamond wire and the cutting fluid, so as to solve the problems of poor fluid carrying capacity and weak chip removal capacity of thinner diamond wire. The prepared hydrophilic layer of the wire is post-processed to obtain a hydrophilic diamond wire; The wetting solution includes: A liquid is prepared by dissolving 0.5% to 1% by mass fatty acid methyl ester ethoxylate and 0.1% to 0.3% by mass Briger in pure water at 60°C to 70°C.

2. The method for preparing hydrophilic diamond wire according to claim 1, characterized in that, The busbar substrate is made of one of the following materials: high carbon steel, tungsten, or tungsten-molybdenum alloy; the cross-section of the busbar substrate is circular with a diameter of 20μm to 40μm.

3. The method for preparing hydrophilic diamond wire according to claim 1, characterized in that, The preprocessing includes, in sequence: Ultrasonic degreasing, hot water washing, cold water washing, acid washing, and cold water washing.

4. The method for preparing hydrophilic diamond wire according to claim 1, characterized in that, The average particle size of the diamond particles is 3μm to 8μm.

5. The method for preparing hydrophilic diamond wire according to claim 4, characterized in that, The wetting solution includes: The liquid is prepared by dissolving 0.5% to 1% propylene glycol and 0.5% to 1% polyethylene glycol 200 in pure water at 60°C to 70°C.

6. The method for preparing hydrophilic diamond wire according to claim 1, characterized in that, The post-processing includes: Air-cutting and drying.

7. A hydrophilic diamond wire, characterized in that, The hydrophilic diamond wire prepared according to any one of claims 1 to 6 comprises, from the inside out, a base material, a plating layer and a hydrophilic layer. The hydrophilic layer is a thin film layer formed by wetting or coating a surfactant solution and curing and drying, obtained by the preparation method according to claim 1. It is used to reduce the contact angle between the diamond wire and the cutting fluid, so as to solve the problems of poor fluid carrying capacity and weak chip removal capacity of thinner diamond wires.

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