Reaction precursor vaporizer and atomic layer deposition system including the same

Abstract

The application relates to a reaction precursor evaporator and an atomic layer deposition system comprising the same, the reaction precursor evaporator comprising: a top cover; an evaporator body connected with the top cover, the evaporator body and the top cover defining a space; a conduit located in the space and connected with the top cover, the conduit extending in a first direction; and an ultrasonic oscillator in contact with the evaporator body. Such a design can further improve the growth per cycle of atomic layer deposition.

Description

Technical Field

[0001] This application relates to a semiconductor device, including the design and manufacture of its components. Background Technology

[0002] Atomic layer deposition (ALD) is a thin film deposition technique that allows for the deposition of ultrathin films, a few nanometers thick, in a precisely controlled manner. It is based on the sequential use of gas-phase chemical processes. Most ALD reactions utilize two chemicals called precursors. These precursors react with the material surface in a sequential, self-limiting manner. By repeatedly exposing the material to different precursors, a thin film is slowly deposited.

[0003] In atomic layer deposition (ALD), films are grown on a substrate by exposing its surface to alternating gaseous species (often referred to as precursors or reactants). Unlike chemical vapor deposition (CVD), precursors are never present simultaneously in the reactor; instead, they are inserted as a series of sequential, non-overlapping pulses. In each pulse, precursor molecules react with the surface in a self-limiting manner, thus terminating the reaction once all available sites on the surface have been consumed.

[0004] Therefore, the maximum amount of material deposited on the surface after a single exposure of all precursors (so-called ALD cycles) is determined by the nature of the precursor-surface interaction. By changing the number of cycles, materials can be grown uniformly and with high precision on arbitrarily complex and large substrates.

[0005] ALD (Alternating Layer Deposition) is a crucial process in the fabrication of semiconductor devices and is also part of the toolkit for synthesizing nanomaterials. It is an active research area with hundreds of different processes published in the scientific literature. ALD is a deposition method with enormous potential, allowing for atomic-level control over the thickness and composition of thin films. Summary of the Invention

[0006] The following is a summary of the basic features of this application, in order to provide a basic understanding of some aspects of this application. Attached Figure Description

[0007] When read in conjunction with the accompanying drawings, various aspects of this application will be readily understood from the following detailed description. It should be noted that the features are not drawn to scale. In fact, for clarity of explanation, the dimensions of various features may be arbitrarily increased or decreased.

[0008] Figure 1 An ALD deposition system 100 according to some embodiments of this application is shown.

[0009] Figure 2 A reaction precursor evaporator 103 according to some comparative embodiments of this application is shown.

[0010] Figure 3aA reaction precursor evaporator 103a is shown according to some embodiments of this application.

[0011] Figure 3b Show Figure 3a A magnified view of the area within the dashed box.

[0012] Figure 4 A reaction precursor evaporator 103b according to some embodiments of this application is shown.

[0013] Figure 5 A reaction precursor evaporator 103c according to some embodiments of this application is shown.

[0014] Figure 6 A reaction precursor evaporator 103d according to some embodiments of this application is shown.

[0015] Figure 7 A reaction precursor evaporator 103e according to some embodiments of this application is shown.

[0016] Figure 8a A reaction precursor evaporator 103f is shown according to some embodiments of this application.

[0017] Figure 8b A reaction precursor evaporator 103g is shown according to some embodiments of this application.

[0018] Figure 8c A reaction precursor evaporator 103h is shown according to some embodiments of this application.

[0019] Figure 8d A reaction precursor evaporator 103i according to some embodiments of this application is shown. Detailed Implementation

[0020] For clarity and brevity, unless otherwise specified, the same reference numerals in different figures indicate the same components. Furthermore, for simplicity, descriptions and details of well-known steps and components may be omitted. The use of the terms “generally” or “substantially” means that the values ​​of a component have parameters that are expected to be close to the stated values ​​or locations. However, as is well known in the art, there are always minor differences that prevent the values ​​or locations from being exactly the stated values ​​or locations. It is generally accepted in the art that a deviation of at least ten percent (10%) (and even up to twenty percent (20%) for some components including semiconductor doping concentrations) is a reasonable deviation from the ideal target as exactly as described. The terms “first,” “second,” “third,” etc., in the claims and / or detailed embodiments (as used in part of the component name) are used to distinguish similar components and do not necessarily describe a temporal, spatial, hierarchical, or any other order. It should be understood that the terms thus used are interchangeable where appropriate, and the embodiments described herein may operate in orders other than those described herein or illustrated by example. References to “some embodiments” mean that a particular feature, structure, or characteristic described in connection with that embodiment is included in at least one embodiment of this application. Therefore, the phrase "in some embodiments" appearing in different places throughout this specification does not necessarily refer to the same embodiment, but in some cases it may refer to the same embodiment. Furthermore, as will be apparent to those skilled in the art, specific features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.

[0021] The following disclosure provides numerous different embodiments or instances for implementing various features of the provided subject matter. Specific examples of components and arrangements are described below. These are, of course, merely examples and are not intended to be limiting. In this application, the description in the following description of a first feature forming on or above a second feature may include embodiments where the first and second features are in direct contact, and may also include embodiments where additional features may be formed between the first and second features so that the first and second features are not in direct contact. Furthermore, reference numerals and / or letters may be repeated in various instances throughout this application. This repetition is for the purpose of simplicity and clarity and does not in itself define the relationship between the various embodiments and / or configurations discussed.

[0022] The embodiments of this application are described in detail below. However, it should be understood that many applicable concepts provided in this application can be implemented in a variety of specific environments. The specific embodiments discussed are merely illustrative and do not limit the scope of this application.

[0023] Atomic layer deposition system

[0024] Figure 1An ALD deposition system 100 according to some embodiments of this application is shown. The ALD system 100 is generally capable of performing the operation of depositing a thin film on a semiconductor substrate 112. The ALD deposition system 100 may include a processing chamber 102 and a reactant delivery system 101.

[0025] Processing chamber 102 may include distributor 106. Processing chamber 102 is fluidly connected to reactant delivery system 101 to deliver reactants or cleaning gases, such as process gas 104, carrier gas 109, liquid precursor 111, etc. Figure 1 (Not shown) is conveyed to distributor 106.

[0026] The reactant delivery system 101 may include a mixing vessel 804 for mixing and / or regulating reactants delivered to the distributor 106. One or more mixing vessel inlet valves 120 may control the input of process gas 104 to the mixing vessel 804.

[0027] Some reactants may be stored in liquid form (such as liquid precursor 111) before being conveyed to processing chamber 102. Reactant delivery system 101 may include a reaction precursor evaporator 103 for vaporizing the liquid precursor 111 intended to be supplied to mixing vessel 804. When saturated reactant vapor generated from the reaction precursor evaporator 103 is not adequately controlled at a suitable location in the delivery pipeline (e.g., when no helium is available for vaporizing / atomizing the liquid precursor 111), it may condense downstream of the delivery pipeline. Exposure of incompatible gases to the condensed reactants can produce small particles. These particles may clog pipelines, impede valve operation, contaminate substrates, etc. Residual reactants can be removed by cleaning and / or purging the delivery pipeline. The delivery pipeline downstream of the reaction precursor evaporator 103 may be heat-treated. Mixing vessel 804 may be heat-treated. The pipeline downstream of the reaction precursor evaporator 103 may have an increasing temperature profile, rising from about 100°C to about 150°C at mixing vessel 804.

[0028] Distributor 106 may be fluidly connected to mixing vessel 804. Distributor 106 may be fluidly connected to reaction precursor evaporator 103. Distributor 106 may be fluidly connected to process liquid. Distributor 106 may dispense reactants onto substrate 112, and the flow rate of the reactants may be controlled by one or more valves (e.g., valves 120, 120A, 105) upstream of distributor 106. Substrate 112 may be located below distributor 106. Substrate 112 may be located on substrate support 108. Distributor 106 may include an appropriate number and arrangement of ports for dispensing reactants onto substrate 112.

[0029] Therefore, the ALD deposition system 100 of this application may include a processing chamber 102 and a precursor evaporator 103. The processing chamber 102 may be fluidly connected to the precursor evaporator 103.

[0030] Processing chamber 102 may include substrate support 108. A space 107 is defined between dispenser 106 and substrate support 108. Space 107 may be located below dispenser 106. Space 107 may be located above substrate support 108. Substrate support 108 may be raised or lowered to expose substrate 112 to space 107 and / or change the size of space 107.

[0031] Distributor 106 and substrate support 108 are electrically connected to RF power supply 114 and matching network 116 to excite plasma. The plasma energy can be controlled by one or more parameters, including the pressure of processing chamber 102, gas concentration, RF source power, RF source frequency, and plasma power pulse timing. RF power supply 114 and matching network 116 can operate at any suitable power to form a plasma with the desired composition of free radical material. Any suitable parameters can be modulated discretely or continuously to provide plasma energy for surface reactions. Plasma power can be applied intermittently in pulses to reduce ion bombardment of the substrate surface relative to continuously excited plasma.

[0032] The processing chamber 102 may include a heater 110 for temperature control of the substrate support 108.

[0033] The internal space of the processing chamber 102 can be maintained under vacuum via valve 118. The pressure in the processing chamber 102 can be controlled by operating a vacuum source such as valve 118. Valve 118 can be adjusted by a downstream vacuum pump ( Figure 1 (Not shown) The vacuum provided. The pressure of the processing chamber 102 can be controlled by changing the flow rate of one or more gases introduced into the processing chamber 102. One or more valve-operated vacuum sources (such as valve 118) can be used to remove reactants from the space 107 surrounding the substrate 112 during appropriate ALD operation phases.

[0034] Precursor evaporator

[0035] To use liquid precursor 111 as a reactant in the ALD process, liquid precursor 111 can be vaporized in a precursor evaporator 103 to form a reactant, which is then conveyed to a distributor 106. In the evaporator 103, a small amount of liquid precursor 111 can flow onto a heated surface to cause vaporization of the liquid precursor 111. The vaporized precursor should not contain any droplets and should have a uniform concentration and accurate dispensing.

[0036] Figure 2 A reaction precursor evaporator 103 according to some comparative embodiments of this application is shown. The reaction precursor evaporator 103 may include: a top cover 228, an evaporator body 220, and a conduit 240.

[0037] The evaporator body 220 can be connected to the top cover 228 to seal between the evaporator body 220 and the top cover 228. The evaporator body 220 may include sidewalls 221 and a bottom 224. The sidewalls 221 may surround the bottom 224. The evaporator body 220 may define a space 241 with the top cover 228. The top cover 228 may define a space 241 with the sidewalls 221 and the bottom 224. A conduit 240 may be located within the space 241. The conduit 240 may be connected to the top cover 228. The conduit 240 may pass through the top cover 228. The evaporator body 220 may extend generally along the y-axis. The conduit 240 may extend generally along the y-axis.

[0038] An opening 222 can be defined on the evaporator body 220. An opening 222 can be defined on the side wall 221.

[0039] In some preferred embodiments, the evaporator body 220 may include a separator 244. The separator 244 may be located within the space 241. The separator 244 may define space 241' with the sidewall 221 and the top cover 228. The separator 244 may define space 241" with the sidewall 221 and the bottom 224. The separator 244 may include a plate containing spaced-apart holes. The separator 244 may include a porous medium. The separator 244 provides porous separation between space 241' and space 241'. The pore size of the separator 244 may be about 5 to 50 micrometers. The separator 244 may be made of stainless steel. The evaporator body 220 may include a support 246. The support 246 may be used to maintain the position of the separator 244 relative to space 241".

[0040] The bracket 246 may include an annular plate 245 having holes 247 that generally pass through along the y-axis. The holes 247 may be evenly distributed around the annular plate 245. Fasteners 248 may be inserted into the holes 247 to secure the annular plate 245 to the bottom 224. The annular plate 245 may include a flange 249. The flange 249 may be adjacent to the upper portion of the annular plate 245. The flange 249 may extend generally along the x-axis. The flange 249 may extend generally radially inward along the annular plate 245. The flange 249 may hold the separator 244 in place above the space 241”.

[0041] Liquid precursor 111 may be supplied to evaporator body 220. Carrier gas 109 may be supplied to evaporator body 220. Carrier gas 109 may be supplied to conduit 240. Conduit 240 includes end 242. End 242 may extend through partition 244 and into space 241”. Carrier gas 109 may flow into liquid precursor 111 located in space 241”. Liquid precursor 111 may pass from space 241” through partition 244.

[0042] The temperature of the reaction precursor evaporator 103 is controllable. The temperature of the evaporator body 220 is controllable. For example, the bottom 224 may include a heater 230 to provide heat to the bottom 224. A thermocouple or temperature sensor 250 may be provided to monitor the temperature of the bottom 224. The heater 230 may be configured on the bottom 224. The heater 230 may be configured on the surface of the bottom 224 away from the space 241. The bottom 224 may include the heater 230.

[0043] The top cover 228 may include a level sensor 70 to sense the level of the liquid precursor 111 in the evaporator body 220. Any suitable type of level sensor 70 may be used. The top cover 228 may include a valve 272. The valve 272 may be centrally located relative to the top cover 228. The top cover 228 may include a connector 278. Carrier gas 109 may be supplied to valve 272 via connector 278. The top cover 228 may include a passage 279. Carrier gas 109 may flow through passage 279 and enter the inlet of valve 272. Passage 279 may preheat carrier gas 109 as it enters the precursor evaporator 103.

[0044] Valve 272 may include an inlet communicating with channel 279 and an outlet communicating with evaporator body 220. Top cover 228 may include connector 276. Connector 276 can be used to deliver liquid precursor 111 to evaporator body 220. Connector 276 can be used to remove liquid precursor 111 from evaporator body 220.

[0045] Connector 276 is fluidly connected to conduit 298. Conduit 298 extends generally along the y-axis. In the y-axis direction, conduit 298 is shorter than conduit 240. Conduit 298 provides or removes liquid precursor 111 into the evaporator body 220. A second conduit 298 may have an end that connects to connector 276. Liquid precursor 111 is provided into the evaporator body 220 via conduit 298. Carrier gas 109 is provided into space 241” via conduit 240. Vaporization of liquid precursor 111 occurs, and the vaporized liquid precursor 111 forms reactants, which are then provided to distributor 106.

[0046] ALD deposition cycle

[0047] Therefore, return Figure 1 The basic ALD cycle for deposition on substrate 112 may include:

[0048] (i) Adsorbing reactants (such as vaporized liquid precursor 111) onto substrate 112 to form an adsorption confinement layer.

[0049] (ii) Remove unadsorbed reactants from the space 107 surrounding the adsorbed reactants.

[0050] (iii) Reacting the adsorbed reactants to form a layer on substrate 112, and

[0051] (iv) Remove desorbed membrane reactants and / or reaction byproducts from the space 107 surrounding the membrane layer formed on the substrate 112.

[0052] The removal operations in steps (ii) and (iv) can be accomplished by cleaning, draining, or evacuating the space 107 surrounding the substrate 112 to background pressure (or “base pressure”). Steps (i) through (iv) of the basic ALD sequence do not necessarily involve two or more chemisorbents, depending on the desired deposition chemicals involved.

[0053] Due to the adsorption-limited nature of ALD, a single ALD cycle can deposit a single monolayer of material. The sequence of operations in a typical ALD cycle (e.g., steps (i) to (iv) above) usually needs to be repeated multiple times to form a conformal film of the desired thickness.

[0054] Alternating current deposition (ALD) processes can be used to deposit conformal silicon oxide (SiOx) films. ALD processes can also be used to deposit conformal dielectric films of other chemical substances. Dielectric films formed by ALD can include silicon carbide (SiC) materials, silicon nitride (SiN) materials, silicon carbon nitride (SiCN) materials, or combinations thereof. Dielectric films formed by ALD can include silicon-carbon oxide, silicon-carbon-oxynitride, and silicon-carbon-nitride.

[0055] The dielectric film formed by ALD can include films containing dopants. Various dopant-containing reactants can be used to form dopant-containing films. Examples include boron-doped silicate glass (BSG) films, phosphorus-doped silicate glass (PSG) films, boron-phosphorus-doped silicate glass (BPSG) films, arsenic (As)-doped silicate glass (ASG) films, and the like. Dopant-containing films can include B₂O₃, B₂O, P₂O₅, P₂O₃, As₂O₃, As₂O₅, and the like. Dopant-containing films with dopants other than boron are feasible, for example, dopants including gallium, phosphorus, or arsenic, or other elements suitable for doping semiconductor substrates, such as other Group III and Group V elements.

[0056] The ALD process can be performed at a variety of temperatures. The appropriate temperature range for the substrate support is between about 25°C and 450°C, or between about 50°C and 300°C, or between about 20°C and 400°C, or between about 200°C and 400°C, or between about 100°C and 350°C.

[0057] The ALD process can be carried out at various pressures in the processing chamber 102. The appropriate pressure in the processing chamber 102 can be between about 10 mTorr and 10 Torr, or between about 20 mTorr and 8 Torr, or between about 50 mTorr and 5 Torr, or between about 100 mTorr and 2 Torr.

[0058] If plasma is used in step (iii), a variety of RF powers can be employed to generate plasma. Suitable RF powers may range from about 100 watts to 10 kilowatts, or from about 200 watts to 6 kilowatts, or from about 500 watts to 3 kilowatts, or from about 1 kilowatt to 2 kilowatts.

[0059] In step (I), various process gas 104 flow rates can be used. Suitable flow rate ranges can be from about 0.1 mL / min to 10 mL / min or between 0.1 mL / min and 10 mL / min, or between about 0.5 mL / min and 5 mL / min or between 0.5 mL / min and 5 mL / min, or between about 1 mL / min and 3 mL / min or between 1 mL / min and 3 mL / min.

[0060] Various carrier gas flow rates can be used in various operations. The range of carrier gas flow rates can be approximately or between 1 liter / min and 20 liters / min, or approximately or between 2 liters / min and 10 liters / min.

[0061] For the optional inert gas cleaning steps in steps (ii) and (iv), the range of inert gas flow rates used may be between about 20 liters / min and 100 liters / min, or between about 40 liters / min and 60 liters / min.

[0062] Next, the evacuation to background pressure step refers to evacuating the processing chamber 102 to the background pressure by directly exposing the processing chamber 102 to one or more vacuum pumps. The background pressure can typically be only a few millitors (e.g., between about 1 and 20 millitors). The evacuation to background pressure step may or may not be accompanied by inert cleaning, so that when one or more valves are opened in the pathway to the vacuum pumps, inert gas may or may not flow.

[0063] Multiple ALD cycles can be repeated to build stacked conformal layers. Each layer can have substantially the same composition. Layers deposited sequentially by ALD can have different compositions, or in some such embodiments, the compositions can be alternated layer by layer, or there can be repeating sequences of layers with different compositions.

[0064] As described above, the output of the reaction precursor evaporator 103 is fed into the processing chamber 102. The output of the reaction precursor evaporator 103 is used to fill the pipeline space connected to the processing chamber 102. The pressure is gradually increased to a predetermined value, and then the reactants are transported from the reaction precursor evaporator 103 to the processing chamber 102. Then, in the reaction precursor evaporator 103, the pressure gradually decreases.

[0065] Due to its inherent limitations, the ALD process results in a relatively slow film growth rate. Therefore, while ensuring film performance, growth per cycle (GPC) and ALD deposition cycle time are the two most critical parameters for evaluating ALD process performance. It has been found that growth per cycle is affected by the output rate of the reaction stream from the precursor evaporator 103 and / or the cleaning efficiency of the processing chamber 102. However, the amount and duration of reactant supplied from the liquid precursor 111 within the precursor evaporator 103 are controlled by the temperature of the precursor evaporator 103. After discharging the reactant, the precursor evaporator 103 requires a considerable amount of time to reach the desired vapor pressure of the liquid precursor 111 for the next output, necessitating further improvements in growth per cycle.

[0066] Figure 3a A reaction precursor evaporator 103a is shown according to some embodiments of this application. Figure 3b Show Figure 3a A magnified view of the area within the dashed box. The reaction precursor evaporator 103a is largely the same as... Figure 2 The difference between the shown reaction precursor evaporator 103 and the following is as follows:

[0067] The reaction precursor evaporator 103a may include an ultrasonic oscillator 30. The ultrasonic oscillator 30 may be in contact with the evaporator body 220. The ultrasonic oscillator 30 may not be in contact with the sidewall 221. The ultrasonic oscillator 30 may be disposed on the surface of the bottom 224 away from the space 241. The bottom 224 may include the ultrasonic oscillator 30.

[0068] The bottom 224 may include a protrusion 224' extending generally along the y-axis. The protrusion 224' may hold the ultrasonic oscillator 30. The protrusion 224' may surround the ultrasonic oscillator 30. The protrusion 224' may contact the ultrasonic oscillator 30. The protrusion 224' may be connected to the bottom 224 in any way, such as, but not limited to, integral molding, welding, or locking.

[0069] Generally along the y-axis, space 241 is separated from the ultrasonic oscillator 30 via evaporator body 220. Space 241' is separated from the ultrasonic oscillator 30 via evaporator body 220. Space 241" is separated from the ultrasonic oscillator 30 via evaporator body 220. Space 241 is separated from the ultrasonic oscillator 30 via bottom 224. Space 241' is separated from the ultrasonic oscillator 30 via bottom 224. Space 241" is separated from the ultrasonic oscillator 30 via bottom 224.

[0070] The ultrasonic oscillator 30 may include an oscillator 302. The ultrasonic oscillator 30 may be configured such that the oscillator 302 moves generally along the y-axis. The ultrasonic energy generated by the oscillator 302 during oscillation can reach the space 241 via the evaporator body 220. The ultrasonic energy can propagate generally along the y-axis to efficiently pass through the bottom 224 of the evaporator body 220. The ultrasonic energy generated by the ultrasonic oscillator 30 can reach the space 241' via the evaporator body 220.

[0071] After installing the ultrasonic oscillator 30 in the reaction precursor evaporator 103, to reduce or suppress bubbles generated when ultrasonic waves are transmitted to the surface of the evaporator body 220 facing the space 241, the ultrasonic oscillator 30 can be placed at the bottom 224 or in a planar area of ​​the evaporator body 220. This placement facilitates the installation of the oscillator 302 so that it vibrates substantially along the y-axis, suppressing power transmission loss of the ultrasound.

[0072] To reduce or suppress bubbles generated when ultrasonic waves are transmitted to the surface of the evaporator body 220 facing the space 241, the surface of the evaporator body 220 facing the space 241 may not include blades. The surface of the evaporator body 220 facing the space 241 may not be textured. The surface of the evaporator body 220 facing the space 241 may be a smooth surface. The surface of the evaporator body 220 facing the space 241 may be a polished surface. The surface of the sidewall 221 facing the space 241 may not include blades. The surface of the sidewall 221 facing the space 241 may not be textured. The surface of the sidewall 221 facing the space 241 may be a smooth surface. The surface of the sidewall 221 facing the space 241 may be a polished surface. The surface of the bottom 224 facing the space 241 may not include blades. The surface of the bottom 224 facing the space 241 may not be textured. The surface of the bottom 224 facing the space 241 may be a smooth surface. The surface of the bottom 224 facing the space 241 may be a polished surface.

[0073] The ultrasonic oscillator 30 can be electrically connected to a power supply. The oscillation frequency of the oscillator 302 can cover multiple frequency bands, with a lower limit of 20 kHz and an upper limit of 100 kHz. The oscillation frequency of the oscillator 302 is, for example, but not limited to, 20, 30, 40, 50, 60, 70, 80, 90, or 100 kHz, and any combination of the above values ​​can be suitable for the oscillation frequency band.

[0074] Heater 230 may be adjacent to ultrasonic oscillator 30. Heater 230 may be adjacent to protrusion 224'. Heater 230 may surround ultrasonic oscillator 30. Heater 230 may surround protrusion 224'. The projection of heater 230 along the x-axis may overlap with protrusion 224'. The projection of heater 230 along the x-axis may overlap with ultrasonic oscillator 30. The projection of protrusion 224' along the x-axis may overlap with ultrasonic oscillator 30. Therefore, the ultrasonic oscillator 30 suitable for this disclosure is capable of withstanding high temperatures. Ultrasonic oscillator 30 can be selected according to different liquid precursors 111 and their evaporation temperatures.

[0075] It has been found that by controlling the temperature of the evaporator body 220 and the oscillation frequency of the oscillator 302, the evaporation rate of the liquid precursor 111 can be adjusted, thereby improving the output rate of the reaction stream from the precursor evaporator 103a. The ultrasonic frequency bands applicable to this disclosure include low frequency (20 kHz to 50 kHz), high frequency (>50 kHz to 80 kHz), and ultra-high frequency (>80 kHz to 100 kHz). In the low frequency band, due to the low cavitation threshold, bubbles are less likely to form, but the energy state efficiency for activating the liquid precursor 111 is low, resulting in a low partial pressure of the liquid precursor 111 in the carrier gas 109. Conversely, in the high frequency band, due to the high cavitation threshold, bubbles are easily formed, but the energy state efficiency for activating the liquid precursor 111 is high, resulting in a high partial pressure of the liquid precursor 111 in the carrier gas 109. To suppress bubble formation in the liquid precursor 111 caused by the ultrasonic cavitation effect, it is necessary to control the cavitation threshold. It has been found that the cavitation threshold of the liquid precursor 111 is related to factors such as the oscillation frequency of the oscillator 302 and the temperature of the liquid precursor 111. Therefore, by combining different evaporation temperatures of the liquid precursor 111 and selecting appropriate temperatures of the evaporator body 220 and oscillation frequencies of the oscillator 302, the reaction stream output rate of the reaction precursor evaporator 103a can be improved while reducing or suppressing bubble generation, according to design rules (as shown in Table 1).

[0076] Table 1

[0077] >350℃～400℃ 20kHz~50kHz >220℃～350℃ >50kHz~80kHz 100℃～220℃ >80KHz~100KHz

[0078] The projection of conduit 240 along the y-axis may overlap with the ultrasonic oscillator 30. The projection of conduit 298 along the y-axis may overlap with the ultrasonic oscillator 30. The projection of conduit 240 along the y-axis may overlap with the protrusion 224'. The projection of conduit 298 along the y-axis may overlap with the protrusion 224'. The projection of conduit 240 along the y-axis may not overlap with the ultrasonic oscillator 30. The projection of conduit 298 along the y-axis may not overlap with the ultrasonic oscillator 30. The projection of conduit 240 along the y-axis may not overlap with the protrusion 224'. The projection of conduit 298 along the y-axis may not overlap with the protrusion 224'.

[0079] The precursor evaporator 103a retains the temperature control function of the precursor evaporator 103 and is equipped with an ultrasonic oscillator 30. The inventors have unexpectedly discovered that by introducing ultrasound, the tension state of the gas-liquid interface of the liquid precursor 111 is changed and / or the energy state of the liquid precursor 111 compound molecules is increased, thereby shortening the supply time of reactants from the liquid precursor 111 and further improving the growth per cycle of the ALD deposition system 100.

[0080] Figure 4 A reaction precursor evaporator 103b according to some embodiments of this application is shown. The reaction precursor evaporator 103b is generally similar to... Figure 3a , 3b The difference between the shown reaction precursor evaporator 103a and the following is as follows:

[0081] Compared to the precursor evaporator 103a, the precursor evaporator 103b may additionally include an ultrasonic coupling layer 50. The evaporator body 220 and the ultrasonic oscillator 30 are separated generally along the y-axis by the ultrasonic coupling layer 50. The bottom 224 and the ultrasonic oscillator 30 are also separated generally along the y-axis by the ultrasonic coupling layer 50. The ultrasonic coupling layer 50 may contact the evaporator body 220. The ultrasonic coupling layer 50 may contact the bottom 224. The ultrasonic coupling layer 50 may contact the protrusion 224'. The ultrasonic coupling layer 50 may contact the ultrasonic oscillator 30. The protrusion 224' may surround the ultrasonic coupling layer 50.

[0082] The projection of conduit 240 along the y-axis may overlap with the ultrasonic coupling layer 50. The projection of conduit 298 along the y-axis may overlap with the ultrasonic coupling layer 50. The projection of conduit 240 along the y-axis may not overlap with the ultrasonic coupling layer 50. The projection of conduit 298 along the y-axis may not overlap with the ultrasonic coupling layer 50. The projection of the ultrasonic coupling layer 50 along the y-axis may overlap with the ultrasonic oscillator 30. The projection of heater 230 along the x-axis may overlap with the ultrasonic coupling layer 50. The projection of heater 230 along the x-axis may not overlap with the ultrasonic coupling layer 50.

[0083] In this text, the "ultrasonic coupling layer" can be a material used to transmit sound waves in an ultrasonic device, such as, but not limited to, ultrasonic transducer adhesive. Therefore, the ultrasonic oscillator 30 can be directly connected to the evaporator body 220. The ultrasonic oscillator 30 can be directly connected to the bottom 224. The ultrasonic coupling layer 50 can be used to reduce the void volume between the ultrasonic oscillator 30 and the evaporator body 220. The ultrasonic coupling layer 50 can be used to reduce the void volume between the ultrasonic oscillator 30 and the bottom 224.

[0084] Figure 5 A reaction precursor evaporator 103c according to some embodiments of this application is shown. The reaction precursor evaporator 103c is generally similar to... Figure 4 The difference between the shown reaction precursor evaporator 103b and the following is as follows:

[0085] Compared to the reaction precursor evaporator 103b, the evaporator body 220 and the ultrasonic oscillator 30 are generally separated along the x-axis by an ultrasonic coupling layer 50. The bottom 224 and the ultrasonic oscillator 30 are also generally separated along the x-axis by the ultrasonic coupling layer 50. The protrusion 224' and the ultrasonic oscillator 30 are also generally separated along the x-axis by the ultrasonic coupling layer 50. The protrusion 224' may surround the ultrasonic coupling layer 50.

[0086] The projection of the ultrasonic coupling layer 50 along the x-axis can overlap with the ultrasonic oscillator 30. The projection of the ultrasonic coupling layer 50 along the x-axis can overlap with the protrusion 224'. One surface 50m of the ultrasonic coupling layer 50 can be coplanar with one surface 224'm of the protrusion 224'.

[0087] Figure 6 A reaction precursor evaporator 103d according to some embodiments of this application is shown. The reaction precursor evaporator 103d is used to... Figure 3a , 3b The bottom 224 of the shown precursor evaporator 103a is replaced with a bottom 224d. Bottom 224d is substantially the same as bottom 224. Bottom 224d includes a protrusion 224d'. The arrangement of bottom 224d and protrusion 224d' is substantially the same as the arrangement of bottom 224 and protrusion 224'. Specifically, the difference between precursor evaporator 103d and precursor evaporator 103a is as follows:

[0088] Bottom 224d can be configured to expose ultrasonic oscillator 30 in opening 222. Bottom 224d can be configured to expose ultrasonic oscillator 30 in space 241. Bottom 224d can be configured to expose ultrasonic oscillator 30 in space 241". Ultrasonic oscillator 30 can contact space 241. Ultrasonic oscillator 30 can contact space 241". A surface 30t of ultrasonic oscillator 30 can be coplanar with a surface 224dt of bottom 224d. For example, bottom 224d can include an opening to expose ultrasonic oscillator 30.

[0089] Therefore, the ultrasonic oscillator 30 can come into contact with the liquid precursor 111. According to the mechanism of homogeneous ultrasonic conduction, the ultrasonic energy generated during the oscillation of the oscillator 302 can reach the space 241 via the evaporator body 220. The ultrasonic energy generally propagates along the y-axis, and the ultrasonic energy generated by the ultrasonic oscillator 30 can reach the space 241' via the evaporator body 220. The ultrasonic energy generated by the ultrasonic oscillator 30 can reach the space 241' via the evaporator body 220.

[0090] Figure 7 A reaction precursor evaporator 103e according to some embodiments of this application is shown. The reaction precursor evaporator 103e is generally similar to... Figure 6 The difference between the shown reaction precursor evaporator 103d and the following is as follows:

[0091] Compared to the precursor evaporator 103d, the precursor evaporator 103e may additionally include an ultrasonic coupling layer 50. Generally along the x-axis, the evaporator body 220 and the ultrasonic oscillator 30 are separated by the ultrasonic coupling layer 50. Generally along the x-axis, the bottom 224d and the ultrasonic oscillator 30 are separated by the ultrasonic coupling layer 50. Generally along the x-axis, the protrusion 224d' and the ultrasonic oscillator 30 are separated by the ultrasonic coupling layer 50. Generally along the y-axis, the space 241 and the ultrasonic coupling layer 50 are separated by the evaporator body 220. Generally along the y-axis, the space 241" and the ultrasonic coupling layer 50 are separated by the bottom 224d. Generally along the y-axis, the space 241" and the ultrasonic coupling layer 50 are separated by the evaporator body 220. Generally along the y-axis, the space 241" and the ultrasonic coupling layer 50 are separated by the bottom 224d.

[0092] The ultrasonic coupling layer 50 may contact the evaporator body 220. The ultrasonic coupling layer 50 may contact the bottom 224d. The ultrasonic coupling layer 50 may contact the protrusion 224d'. The ultrasonic coupling layer 50 may contact the ultrasonic oscillator 30. The ultrasonic coupling layer 50 may surround the ultrasonic oscillator 30. The protrusion 224d' may surround the ultrasonic coupling layer 50.

[0093] The projection of the ultrasonic coupling layer 50 along the x-axis can overlap with the ultrasonic oscillator 30. The projection of the protrusion 224d' along the x-axis can overlap with the ultrasonic coupling layer 50. The projection of the heater 230 along the x-axis can overlap with the ultrasonic coupling layer 50.

[0094] One surface 50m of the ultrasonic coupling layer 50 may be coplanar with one surface 224'm of the protrusion 224'. In the y-axis direction, one surface 50t of the ultrasonic coupling layer 50 may be defined at a height h with one surface 30t of the ultrasonic oscillator 30, where h>0.

[0095] The bottom portion 224d may include a protrusion 224d" extending generally along the x-axis. The protrusion 224d" may hold the ultrasonic oscillator 30. The protrusion 224d" may surround the ultrasonic oscillator 30. In the y-axis direction, the protrusion 224d" may cover the ultrasonic coupling layer 50. The protrusion 224d" may contact the ultrasonic oscillator 30. The projection of the protrusion 224d" along the x-axis may overlap with the ultrasonic coupling layer 50. The protrusion 224d" may be connected to the bottom portion 224 in any way, such as, but not limited to, integral molding, welding, or locking.

[0096] Figure 8a A reaction precursor evaporator 103f is shown according to some embodiments of this application. The reaction precursor evaporator 103f is used to... Figure 3a , 3b The sidewall 221 of the shown precursor evaporator 103a is replaced with a body 221f, and the included bottom 224 is replaced with a bottom 224f. The sidewall 221f is substantially the same as the sidewall 221. The bottom 224f is substantially the same as the bottom 224. Specifically, the difference between the precursor evaporator 103f and the precursor evaporator 103a is as follows:

[0097] Sidewall 221f may include layers 221a, 221b, and 221c. In the x-axis direction, layer 221a may be adjacent to space 241. Layer 221a may be adjacent to space 241'. Layer 221a may be adjacent to space 241'". Layer 221a may contact space 241. Layer 221a may contact space 241'. Layer 221a may contact space 241'. Layer 221b may be away from space 241. Layer 221b may be away from space 241'. Layer 221b may be away from space 241'. In the x-axis direction, layer 221c may be located between layers 221a and 221b.

[0098] The bottom layer 224f includes layers 224a, 224b, and 224c. In the y-axis direction, layer 224a may be adjacent to opening 222. Layer 224a may be adjacent to space 241. Layer 224a may be adjacent to space 241'. Layer 224a may be adjacent to space 241'. Layer 224a may contact space 241. Layer 224a may contact space 241'. Layer 224b may be away from opening 222. Layer 224b may be away from space 241. Layer 224b may be away from space 241'. Layer 224b may be away from space 241'. Layer 224b may be adjacent to heater 230. In the y-axis direction, layer 224c may be located between layers 224a and 224b.

[0099] Layer 221a can be connected to layer 221c. Layer 221c can be connected to layer 221b. Layer 224a can be connected to layer 224c. Layer 224c can be connected to layer 224b. Layer 221a can be connected to layer 224a. Layer 221b can be connected to layer 224b. Layer 221c can be connected to layer 224c.

[0100] The bottom layer 224f may include a protrusion 224f'. The configuration relationship between the protrusion 224f' and the bottom layer 224f is generally equivalent to the configuration relationship between the protrusion 224' and the bottom layer 224. The protrusion 224f' may be connected to the layer 224b. The protrusion 224f' may contact the layer 224b. The protrusion 224f' may extend from the layer 224b along the y-axis direction.

[0101] Layer 224a may cover the ultrasonic oscillator 30. Layer 224b may cover the ultrasonic oscillator 30. Layer 224b may contact the ultrasonic oscillator 30. Layer 224c may cover the ultrasonic oscillator 30. The projection of layer 224a along the y-axis may overlap with the protrusion 224f'. The projection of layer 224b along the y-axis may overlap with the protrusion 224f'. The projection of layer 224c along the y-axis may overlap with the protrusion 224f'. The projection of layer 224a along the y-axis may overlap with the ultrasonic oscillator 30. The projection of layer 224b along the y-axis may overlap with the ultrasonic oscillator 30. The projection of layer 224c along the y-axis may overlap with the ultrasonic oscillator 30.

[0102] In the y-axis direction, the ultrasonic oscillator 30 can be separated from the opening 22 via layer 224a. The ultrasonic oscillator 30 can be separated from the opening 22 via layer 224b. The ultrasonic oscillator 30 can be separated from the opening 22 via layer 224c. The ultrasonic oscillator 30 can be separated from the space 241 via layer 224a. The ultrasonic oscillator 30 can be separated from the space 241 via layer 224b. The ultrasonic oscillator 30 can be separated from the space 241 via layer 224c.

[0103] Layer 221c may have a higher thermal conductivity than layer 221a. Layer 221c may have a higher thermal conductivity than layer 221b. Layer 224c may have a higher thermal conductivity than layer 224a. Layer 224c may have a higher thermal conductivity than layer 224b. The materials of layers 221a, 221b, 224a, and 224b are, for example, but not limited to, steel. The materials of layers 221c and 224c are, for example, but not limited to, aluminum. The inventors have unexpectedly discovered that using layer 221c or layer 224c with higher thermal conductivity can improve the temperature field uniformity inside the reaction precursor evaporator 103f (e.g., spaces 241, 241', 241") without hindering the transmission of ultrasonic energy from the ultrasonic oscillator 30.

[0104] Figure 8b A reaction precursor evaporator 103g is shown according to some embodiments of this application. The reaction precursor evaporator 103g is substantially the same as... Figure 8a The difference between the shown reaction precursor evaporator 103f and the following is as follows:

[0105] Bottom layer 224f can be configured to expose the ultrasonic oscillator 30 in opening 222. Layer 224a can be configured to expose the ultrasonic oscillator 30 in opening 222. Layer 224b can be configured to expose the ultrasonic oscillator 30 in opening 222. Layer 224c can be configured to expose the ultrasonic oscillator 30 in opening 222. Bottom layer 224f can be configured to expose the ultrasonic oscillator 30 in space 241. Layer 224a can be configured to expose the ultrasonic oscillator 30 in space 241. Layer 224b can be configured to expose the ultrasonic oscillator 30 in space 241. Layer 224c can be configured to expose the ultrasonic oscillator 30 in space 241. Bottom layer 224f can be configured to expose the ultrasonic oscillator 30 in space 241. Layer 224a can be configured to expose the ultrasonic oscillator 30 in space 241. Layer 224b can be configured to expose space 241” of ultrasonic oscillator 30. Layer 224c can be configured to expose space 241” of ultrasonic oscillator 30. Ultrasonic oscillator 30 can contact space 241”. Ultrasonic oscillator 30 can contact space 241”. Ultrasonic oscillator 30 can contact layer 224a. Ultrasonic oscillator 30 can contact layer 224b. Ultrasonic oscillator 30 can contact layer 224c. A surface 30t of ultrasonic oscillator 30 can be coplanar with a surface 224at of layer 224a. For example, bottom layer 224f can include an opening to expose ultrasonic oscillator 30. Layer 224a can include an opening to expose ultrasonic oscillator 30. Layer 224b can include an opening to expose ultrasonic oscillator 30. Layer 224c can include an opening to expose ultrasonic oscillator 30.

[0106] The projection of layer 224a along the x-axis can overlap with the ultrasonic oscillator 30. The projection of layer 224b along the x-axis can overlap with the ultrasonic oscillator 30. The projection of layer 224c along the x-axis can overlap with the ultrasonic oscillator 30. The projection of layer 224a along the y-axis does not overlap with the ultrasonic oscillator 30. The projection of layer 224b along the y-axis does not overlap with the ultrasonic oscillator 30. The projection of layer 224c along the y-axis does not overlap with the ultrasonic oscillator 30.

[0107] Therefore, the ultrasonic oscillator 30 can come into contact with the liquid precursor 111. According to the mechanism of homogeneous ultrasonic conduction, the ultrasonic energy generated during the oscillation of the oscillator 302 can reach the space 241 via the evaporator body 220. The ultrasonic energy generally propagates along the y-axis, and the ultrasonic energy generated by the ultrasonic oscillator 30 can reach the space 241' via the evaporator body 220. The ultrasonic energy generated by the ultrasonic oscillator 30 can reach the space 241' via the evaporator body 220.

[0108] Figure 8c A reaction precursor evaporator 103h is shown according to some embodiments of this application. The reaction precursor evaporator 103h is substantially the same as... Figure 8a The difference between the shown reaction precursor evaporator 103f and the following is as follows:

[0109] Layer 224b may be configured to expose the ultrasonic oscillator 30 to layer 224a. Layer 224c may be configured to expose the ultrasonic oscillator 30 to layer 224a. The ultrasonic oscillator 30 may contact layer 224a. The ultrasonic oscillator 30 may contact layer 224b. The ultrasonic oscillator 30 may contact layer 224c. A surface 30t of the ultrasonic oscillator 30 may be coplanar with a surface 224bt of layer 224b. For example, layer 224b may include an opening to expose the ultrasonic oscillator 30. Layer 224c may include an opening to expose the ultrasonic oscillator 30.

[0110] In the y-axis direction, the ultrasonic oscillator 30 can be separated from the opening 22 via layer 224a. The ultrasonic oscillator 30 can be separated from the space 241 via layer 224a.

[0111] The projection of layer 224a along the x-axis does not overlap with the ultrasonic oscillator 30. The projection of layer 224b along the x-axis overlaps with the ultrasonic oscillator 30. The projection of layer 224c along the x-axis overlaps with the ultrasonic oscillator 30. The projection of layer 224a along the y-axis overlaps with the ultrasonic oscillator 30. The projection of layer 224b along the y-axis does not overlap with the ultrasonic oscillator 30. The projection of layer 224c along the y-axis does not overlap with the ultrasonic oscillator 30.

[0112] Figure 8dA reaction precursor evaporator 103i according to some embodiments of this application is shown. The reaction precursor evaporator 103i is generally similar to... Figure 8a The difference between the shown reaction precursor evaporator 103f and the following is as follows:

[0113] Layer 224b may be configured to expose the ultrasonic oscillator 30 to layer 224c. The ultrasonic oscillator 30 may contact layer 224b. The ultrasonic oscillator 30 may contact layer 224c. A surface 30t of the ultrasonic oscillator 30 may be coplanar with a surface 224ct of layer 224c. For example, layer 224b may include an opening to expose the ultrasonic oscillator 30.

[0114] In the y-axis direction, the ultrasonic oscillator 30 can be separated from the opening 22 via layer 224a. The ultrasonic oscillator 30 can be separated from the opening 22 via layer 224c. The ultrasonic oscillator 30 can be separated from the space 241 via layer 224a. The ultrasonic oscillator 30 can be separated from the space 241 via layer 224c.

[0115] The projection of layer 224a along the x-axis does not overlap with the ultrasonic oscillator 30. The projection of layer 224b along the x-axis overlaps with the ultrasonic oscillator 30. The projection of layer 224c along the x-axis does not overlap with the ultrasonic oscillator 30. The projection of layer 224a along the y-axis overlaps with the ultrasonic oscillator 30. The projection of layer 224b along the y-axis does not overlap with the ultrasonic oscillator 30. The projection of layer 224c along the y-axis overlaps with the ultrasonic oscillator 30.

[0116] Unexpectedly, the additional ultrasonic oscillator 30 and the precursor evaporator 103a-i have not only been found to be an effective way to improve the growth per cycle of the ALD deposition system 100, but also to achieve effective evaporation of the liquid precursor 111, thereby improving evaporation efficiency and uniformity. Based on the temperature control function of the precursor evaporator 103, the precursor evaporator 103a-i, by introducing ultrasound, can effectively increase the evaporation rate of the liquid precursor 111. This improvement not only shortens the time for providing reactants from the liquid precursor 111, but also shortens the overall ALD deposition cycle time, thereby increasing the productivity of the ALD deposition system 100.

[0117] As used herein, for ease of description, spatial relative terms such as “below,” “under,” “lower,” “above,” “upper,” “lower,” “left,” “right,” etc., may be used to describe the relationship between a component or feature illustrated in the figure and another component or feature. In addition to the orientations depicted in the figures, spatial relative terms are intended to cover different orientations of the device in use or operation. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatial relative descriptors used herein shall be interpreted accordingly.

[0118] It should be noted that the width, distance, and other numerical values ​​described in this application are merely illustrative, and this application is not limited thereto. In some embodiments, these values ​​may be adjusted according to the actual application of the invention without departing from the spirit of the invention.

[0119] As used herein, the terms “about,” “approximately,” “substantially,” “substantially,” and “about” are used to describe and account for small variations. When used in conjunction with an event or situation, the terms can refer to a situation in which the event or situation has clearly occurred or is very close to occurring. As used herein with respect to a given value or range, the terms “about” or “similar” generally mean within ±10%, ±5%, ±1%, or ±0.5% of the given value or range. A range may be expressed herein as from one endpoint to another or between two endpoints. Unless otherwise specified, all ranges disclosed herein include endpoints. The term “substantially coplanar” can refer to two surfaces located along the same plane within a few micrometers (μm), such as within 10 μm, 5 μm, 1 μm, or 0.5 μm. When referring to the same numerical value or characteristic as “substantially,” the term can refer to a value within ±10%, ±5%, ±1%, or ±0.5% of the average of said value.

[0120] The foregoing outlines several embodiments and detailed features of this application. The embodiments described herein can readily serve as the basis for designing or modifying other processes and structures for performing the same or similar purposes and / or obtaining the same or similar advantages of the embodiments introduced herein. These equivalent constructions do not depart from the spirit and scope of this application and various changes, substitutions, and modifications can be made without departing from the spirit and scope of this application.

[0121] While the subject matter of this specification has been described by way of particular preferred embodiments and exemplary embodiments, the foregoing figures and descriptions merely depict typical, non-limiting examples of embodiments of the subject matter and are therefore not intended to limit its scope. Many alternatives and variations will be apparent to those skilled in the art.

[0122] As reflected in the following claims, various aspects of this application may have fewer features than all the features of a single embodiment disclosed above. Therefore, the claims set forth below are hereby expressly incorporated into the detailed description, and each claim represents an independent embodiment of this application. Furthermore, although some embodiments described herein include features included in other embodiments but not others, those skilled in the art will understand that combinations of features from different embodiments are intended to fall within the scope of this application and to form different embodiments.

Claims

1. A reaction precursor evaporator, comprising: Top cover; An evaporator body is connected to the top cover, the evaporator body and the top cover define a space, and the evaporator body includes side walls and a bottom; A conduit, located in the space and connected to the top cover, extending generally along a first direction; and An ultrasonic oscillator is in contact with the evaporator body; The sidewall or the bottom comprises: The first layer, which is adjacent to the space described above; The second layer, which is located away from the space described above; and The third layer is located between the first and second layers; The third layer has a higher thermal conductivity than the first layer, and the third layer has a higher thermal conductivity than the second layer.

2. The reaction precursor evaporator according to claim 1, wherein the ultrasonic oscillator is in contact with the space.

3. The reaction precursor evaporator according to claim 1, wherein the space is separated from the ultrasonic oscillator via the evaporator body in a direction generally along the first direction.

4. The reaction precursor evaporator according to any one of claims 1 to 3, wherein the ultrasonic oscillator comprises an oscillator that moves generally along the first direction.

5. The reaction precursor evaporator according to any one of claims 1 to 3, further comprising an ultrasonic coupling layer, wherein the evaporator body and the ultrasonic oscillator are separated via the ultrasonic coupling layer in a direction generally along the first direction.

6. The reaction precursor evaporator according to any one of claims 1 to 3, further comprising an ultrasonic coupling layer, wherein the evaporator body and the ultrasonic oscillator are separated via the ultrasonic coupling layer in a direction substantially perpendicular to the first direction.

7. The reaction precursor evaporator according to any one of claims 1 to 3, wherein the projection of the conduit along the first direction overlaps with the ultrasonic oscillator.

8. An atomic layer deposition system, comprising: Processing room; And a reaction precursor evaporator according to any one of claims 1 to 7, wherein the processing chamber is fluidly connected to the reaction precursor evaporator.

9. The atomic layer deposition system according to claim 8, further comprising a carrier gas source, the carrier gas source being fluidly connected to the conduit.

10. The atomic layer deposition system according to claim 8 or 9, wherein the processing chamber includes a reactant dispenser fluidly connected to the reactant precursor evaporator.

11. A reaction precursor evaporator, comprising: An evaporator body, the evaporator body including sidewalls and a bottom, wherein the evaporator body generally extends along a first direction and defines an opening; A heater, which is disposed at the bottom of the evaporator body; and An ultrasonic oscillator is disposed at the bottom of the evaporator body; The bottom includes: The first layer, which is adjacent to the opening; The second layer, which is away from the opening; and The third layer is located between the first and second layers; The third layer has a higher thermal conductivity than the first layer, and the third layer has a higher thermal conductivity than the second layer.

12. The reaction precursor evaporator of claim 11, wherein the bottom is configured to expose the ultrasonic oscillator in the opening.

13. The reaction precursor evaporator of claim 11, wherein the opening is separated from the ultrasonic oscillator via the bottom in a direction generally along the first direction.

14. The reaction precursor evaporator according to any one of claims 11 to 13, wherein the bottom includes a protrusion that extends substantially along the first direction.

15. The reaction precursor evaporator of claim 11, wherein the first layer is configured to expose the ultrasonic oscillator in the opening.

16. The reaction precursor evaporator of claim 11, wherein the third layer is configured to expose the ultrasonic oscillator in the first layer.

17. The reaction precursor evaporator according to claim 16, wherein the third layer is in contact with the ultrasonic oscillator.

18. The reaction precursor evaporator of claim 11, wherein the second layer is configured to expose the ultrasonic oscillator in the third layer.

19. The reaction precursor evaporator of claim 18, wherein the ultrasonic oscillator comprises an oscillator that moves generally along the first direction.

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