A pvt detection method, system and circuit

Abstract

This invention proposes a PVT detection method, system, and circuit. A first sample is subjected to process detection, voltage detection, and temperature detection to obtain the detection voltages for each parameter. The first sample is then processed to generate process reference voltages, voltage reference voltages, and temperature reference voltages to obtain reference voltages for each parameter. The detected voltages and reference voltages are quantized and differentially analyzed to obtain process codes, voltage codes, and temperature codes. The degree of process angle deviation, voltage deviation, and temperature deviation of the first sample are then determined to obtain the PVT detection result for the first sample. This invention improves measurement accuracy by addressing issues caused by chip-specific process deviations, internal power supply deviations, and temperature deviations.

Description

Technical Field

[0001] This invention relates to the field of integrated circuit design services, and more particularly to a PVT testing method, system, and circuit. Background Technology

[0002] In the integrated circuit manufacturing process, uncertainties in chip pattern transfer and process fluctuations inevitably lead to deviations in the devices on the chip. As the feature size of semiconductor processes continues to shrink, process deviations show a continuous increasing trend. This makes the constraints adopted in the integrated circuit design process more stringent, and also severely restricts the performance and power consumption of integrated circuits. At the same time, the power supply voltage of integrated circuits is affected by external power supplies and various parasitic factors and layout traces, causing deviations in the power supply voltage within specific modules. These deviations can have a significant impact on circuit performance. On the other hand, integrated circuits are affected by ambient temperature and the heat generated by the operation of internal circuits, causing temperature changes at various nodes. As the feature size of semiconductor processes continues to shrink, the impact of temperature changes on the circuit becomes increasingly significant.

[0003] Therefore, current chip testing technology is affected not only by process deviations, internal power supply deviations, and temperature deviations of the device itself, but also by the constraints of external factors on integrated circuit design. This results in greater measurement difficulty, higher costs, and lower accuracy of measurement results when performing industrial testing on chips. Summary of the Invention

[0004] To address the aforementioned issues, this invention proposes a PVT detection method, system, and circuit to resolve the problem of low accuracy in chip detection measurement results caused by variations in chip manufacturing processes, internal power supply, and temperature.

[0005] To achieve the above objectives, embodiments of the present invention provide a PVT detection method, comprising: performing process detection, voltage detection, and temperature detection on a first sample respectively to obtain process detection voltage, voltage detection voltage, and temperature detection voltage;

[0006] The first sample is subjected to process reference voltage generation processing, voltage reference voltage generation processing and temperature reference voltage generation processing respectively to obtain process reference voltage, voltage reference voltage and temperature reference voltage;

[0007] The process detection voltage, the process reference voltage, the voltage detection voltage, the voltage reference voltage, the temperature detection voltage, and the temperature reference voltage are quantized and differentially analyzed to obtain the process code, voltage code, and temperature code.

[0008] Based on the process code, the voltage code, and the temperature code, the degree of process angle deviation of the first sample, the degree of voltage deviation of the sample, and the degree of temperature deviation of the sample are determined to obtain the PVT test result of the first sample.

[0009] The present invention provides a PVT detection method that can detect the process, voltage, and temperature deviations of a chip. By obtaining the detection code through a fully static voltage quantization method, the problem of dynamic comparison structure being easily affected by temperature, voltage, and process can be avoided, thereby improving the accuracy of chip detection results.

[0010] Furthermore, the process detection, voltage detection, and temperature detection are performed on the first sample respectively to obtain the process detection voltage, voltage detection voltage, and temperature detection voltage, specifically as follows:

[0011] Collect the factory process parameters of the first sample; obtain the positive temperature coefficient current and negative temperature coefficient current through the voltage relationship within the factory process parameters of the first sample; set the temperature coefficient of the positive temperature coefficient current and the negative temperature coefficient current to obtain the zero temperature coefficient current; convert the zero temperature coefficient current into the process detection voltage.

[0012] The high-voltage power domain and low-voltage power domain of the first sample are detected respectively to generate the volt detection voltage;

[0013] The junction area parameters of the first sample are collected, and the junction area parameters are subjected to current mirroring to obtain the temperature detection voltage.

[0014] Furthermore, the process reference voltage generation process, voltage reference voltage generation process, and temperature reference voltage generation process are respectively applied to the first sample to obtain the process reference voltage, voltage reference voltage, and temperature reference voltage, specifically as follows:

[0015] Based on the voltage relationship within the factory process parameters of the first sample, a reference voltage is obtained. The reference voltage is then converted into a reference current and subjected to parameter elimination mirroring to obtain the process reference voltage.

[0016] The high-voltage power domain and low-voltage power domain of the first sample are detected respectively to generate the reference voltage.

[0017] The junction area parameters of the first sample are collected, and the temperature reference voltage is obtained by performing parameter elimination mirroring processing based on the relationship between the junction area parameters and the reference voltage.

[0018] Furthermore, the process detection voltage, the process reference voltage, the voltage detection voltage, the voltage reference voltage, the temperature detection voltage, and the temperature reference voltage are quantized and differentially analyzed to obtain the process code, voltage code, and temperature code, specifically as follows:

[0019] The process detection voltage, the process reference voltage, the volt detection voltage, the volt reference voltage, the temperature detection voltage, and the temperature reference voltage are respectively subjected to digital-to-analog quantization calculations to obtain the digital code of the detected quantized process voltage, the digital code of the reference quantized process voltage, the digital code of the detected quantized volt voltage, the digital code of the reference quantized volt voltage, the digital code of the detected quantized temperature voltage, and the digital code of the reference quantized temperature voltage.

[0020] Based on the digital codes for detected and quantized process voltage, reference quantized process voltage, detected and quantized volt voltage, reference quantized volt voltage, detected and quantized temperature voltage, and reference quantized temperature voltage, differential operations are performed to obtain the process code, the voltage code, and the temperature code. The process code consists of a process discrimination bit and a first basic digital code, the voltage code consists of a voltage discrimination bit and a second basic digital code, and the temperature code consists of a temperature discrimination bit and a third basic digital code.

[0021] Furthermore, the step of determining the degree of process angle deviation, the degree of voltage deviation, and the degree of temperature deviation of the first sample based on the process code, the voltage code, and the temperature code to obtain the PVT test result of the first sample is as follows:

[0022] Based on the sign of the judgment flag bit of the process code and the process detection type of the first sample, determine whether the process angle of the first sample is biased towards a fast angle or a slow angle; the larger the value of the first basic digital code, the greater the degree of deviation of the process angle of the first sample; based on the deviation angle judgment result of the judgment flag bit and the degree of deviation judgment result of the first basic digital code, obtain the process detection result.

[0023] When the voltage discrimination bit of the voltage code is determined to be positive, it is determined that the voltage of the first sample is higher than the reference voltage. When the voltage discrimination bit of the voltage code is determined to be negative, it is determined that the voltage of the first sample is lower than the reference voltage. The larger the second basic digital code is, the more the first sample deviates from the reference voltage, and a voltage detection result is obtained.

[0024] When the temperature discrimination bit of the temperature code is positive, it is determined that the temperature of the first sample is higher than the reference temperature. When the temperature discrimination bit of the temperature code is negative, it is determined that the temperature of the first sample is lower than the reference temperature. The larger the third basic digital code is, the more the temperature of the first sample deviates from the reference temperature, and the temperature detection result is obtained.

[0025] Based on the process detection results, the voltage detection results, and the temperature detection results, the PVT detection results of the first sample are obtained.

[0026] The present invention also provides a PVT detection system, comprising: a detection voltage generation module, a reference voltage generation module, an analog-to-digital conversion module, and a digital storage and detection result output module;

[0027] The detection voltage generation module is used to perform process detection, voltage detection and temperature detection on the first sample respectively, and obtain process detection voltage, voltage detection voltage and temperature detection voltage;

[0028] The reference voltage generation module is used to perform process reference voltage generation, voltage reference voltage generation and temperature reference voltage generation processes on the first sample respectively to obtain process reference voltage, voltage reference voltage and temperature reference voltage.

[0029] The analog-to-digital conversion module is used to quantize and differentiate the process detection voltage, the process reference voltage, the voltage detection voltage, the voltage reference voltage, the temperature detection voltage, and the temperature reference voltage to obtain the process code, voltage code, and temperature code.

[0030] The digital storage and detection result output module is used to determine the degree of process angle deviation, the degree of voltage deviation, and the degree of temperature deviation of the first sample based on the process code, the voltage code, and the temperature code, and to obtain the PVT detection result of the first sample.

[0031] The PVT detection system provided in this invention generates a fully static voltage through a module, then quantizes it to obtain a digital code. The degree of deviation is judged by the digital code. It can also automatically adjust the working state of other circuits to compensate for the effects of process, voltage, and temperature deviations. This greatly alleviates the strict constraints in the design process of other circuits of the chip, optimizes the chip power consumption under different process, voltage, and temperature conditions, and thus improves the accuracy of the measurement results when affected by external factors.

[0032] Furthermore, the detection voltage generation module is used to perform process detection, voltage detection, and temperature detection on the first sample respectively, to obtain the process detection voltage, voltage detection voltage, and temperature detection voltage, including:

[0033] Process detection unit, voltage detection unit, and temperature detection unit;

[0034] The process detection unit is used to collect the factory process parameters of the first sample; obtain the positive temperature coefficient current and the negative temperature coefficient current through the voltage relationship within the factory process parameters of the first sample; set the temperature coefficient of the positive temperature coefficient current and the negative temperature coefficient current to obtain the zero temperature coefficient current; and convert the zero temperature coefficient current into the process detection voltage.

[0035] The volt detection unit is used to detect the high-voltage power domain and the low-voltage power domain of the first sample respectively, and generate the volt detection voltage.

[0036] The temperature detection unit is used to collect the junction area parameters of the first sample, and perform current mirroring on the junction area parameters to obtain the temperature detection voltage.

[0037] Furthermore, the reference voltage generation module is used to perform process reference voltage generation processing, voltage reference voltage generation processing, and temperature reference voltage generation processing on the first sample respectively, to obtain process reference voltage, voltage reference voltage, and temperature reference voltage, including:

[0038] Process reference voltage generation unit, voltage reference voltage generation unit, and temperature reference voltage generation unit;

[0039] The process reference voltage generation unit is used to obtain a reference voltage based on the voltage relationship within the factory process parameters of the first sample, convert the reference voltage into a reference current, perform parameter elimination mirroring processing, and obtain the process reference voltage.

[0040] The voltage reference voltage generation unit is used to detect the high voltage power domain and low voltage power domain of the factory-set sample respectively, and generate the voltage reference voltage.

[0041] The temperature reference voltage generation unit is used to collect the junction area parameters of the first sample, and perform parameter elimination mirroring processing based on the relationship between the junction area parameters and the reference voltage to obtain the temperature reference voltage.

[0042] Furthermore, the analog-to-digital conversion module is used to quantize and differentiate the process detection voltage, the process reference voltage, the voltage detection voltage, the voltage reference voltage, the temperature detection voltage, and the temperature reference voltage to obtain a process code, a voltage code, and a temperature code, including:

[0043] Process quantization differential unit, voltage quantization differential unit, and temperature quantization differential unit;

[0044] The process quantization differential unit is used to perform digital-to-analog quantization calculations on the process detection voltage and the process reference voltage respectively to obtain the detection quantized process voltage digital code and the reference quantized process voltage digital code, and then perform differential operations to obtain the process code.

[0045] The voltage quantization differential unit is used to perform digital-to-analog quantization calculations on the voltage detection voltage and the voltage reference voltage respectively to obtain the detection quantized voltage voltage digital code and the reference quantized voltage voltage digital code, and then perform differential operation to obtain the voltage code.

[0046] The temperature quantization differential unit is used to perform digital-to-analog quantization calculations on the temperature detection voltage and the temperature reference voltage respectively to obtain the digital code of the detected quantized temperature voltage and the digital code of the reference quantized temperature voltage, and then perform differential operation to obtain the temperature code.

[0047] The process code consists of a process discrimination bit and a first basic digital code; the voltage code consists of a voltage discrimination bit and a second basic digital code; and the temperature code consists of a temperature discrimination bit and a third basic digital code.

[0048] Furthermore, the digital storage and detection result output module is used to determine the degree of process angle deviation of the first sample, the degree of voltage deviation of the sample, and the degree of temperature deviation of the sample based on the process code, the voltage code, and the temperature code, to obtain the PVT detection result of the first sample, including:

[0049] Process deviation judgment unit, voltage deviation judgment unit, temperature deviation judgment unit, and detection result output unit;

[0050] The process deviation judgment unit is used to determine whether the process angle of the first sample is biased towards a fast angle or a slow angle based on the sign of the judgment flag bit of the process code and the process detection type of the first sample; the larger the value of the first basic digital code, the greater the degree of process angle deviation of the first sample; and to obtain the process detection result based on the deviation angle judgment result of the judgment flag bit and the deviation degree judgment result of the first basic digital code.

[0051] The voltage deviation judgment unit is used to determine that the voltage of the first sample is higher than the reference voltage when the voltage discrimination bit of the voltage code is positive, and to determine that the voltage of the first sample is lower than the reference voltage when the voltage discrimination bit of the voltage code is negative. It also determines that the larger the second basic digital code is, the more the first sample deviates from the reference voltage, and obtains the voltage detection result.

[0052] The temperature deviation judgment unit is used to determine that the temperature of the first sample is higher than the reference temperature when the temperature discrimination bit of the temperature code is positive, and to determine that the temperature of the first sample is lower than the reference temperature when the temperature discrimination bit of the temperature code is negative. It also determines that the larger the third basic digital code is, the more the temperature of the first sample deviates from the reference temperature, and thus obtains the temperature detection result.

[0053] The detection result output unit is used to obtain the PVT detection result of the first sample based on the process detection result, the voltage detection result, and the temperature detection result.

[0054] This invention also provides a PVT detection circuit, including: a bandgap reference source circuit, a process detection circuit, a voltage detection circuit, a temperature detection circuit, a multiplexer, an analog-to-digital converter, a digital circuit, and a register;

[0055] The bandgap reference source circuit, the process detection circuit, the voltage detection circuit, and the temperature detection circuit are connected to the analog-to-digital converter via the multiplexer;

[0056] The digital circuit is connected to the register; the digital circuit is connected to the analog-to-digital converter.

[0057] The bandgap reference source circuit is used to generate a bias voltage;

[0058] The process detection circuit is used to generate the process detection voltage and the corresponding process reference voltage;

[0059] The voltage detection circuit is used to generate the voltage detection voltage and the corresponding voltage reference voltage;

[0060] The temperature detection circuit is used to generate the temperature detection voltage and the corresponding temperature reference voltage;

[0061] The multiplexer is used for data transmission between the bandgap reference source circuit, the process detection circuit, the voltage detection circuit, the temperature detection circuit, and the analog-to-digital converter.

[0062] The analog-to-digital converter is used to generate digital codes;

[0063] The digital circuit is used to send control signals;

[0064] The register is used to store the digital code.

[0065] This invention provides a PVT detection circuit. Each detection module has advantages such as simple circuit structure, few components, small chip area, and complete shutdown after detection. The temperature detection circuit and process detection circuit are closely related and can be repeatedly called to detect the temperature and process corner of different parts of the chip respectively. Nine voltage signals are multiplexed by a digital-to-analog converter and quantized sequentially through a simple digital algorithm, which can greatly reduce on-chip resource consumption. The final multi-byte quantization result can accurately represent the deviation of temperature, voltage, and process, rather than just three simple results. It can be called by other modules to accurately compensate for the impact of process, voltage, and temperature deviations, greatly alleviate the strict constraints in the design process of other chip circuits, optimize chip power consumption under different process, voltage, and temperature conditions, and improve the accuracy of measurement results.

[0066] Furthermore, the voltage detection circuit includes: a first resistor, a second resistor, a third resistor, a fourth resistor, a first volt detection voltage output port, a second volt detection voltage output port, a first switching transistor, and a second switching transistor;

[0067] The first resistor is connected to the second resistor and the first volt detection voltage output port, respectively; the second resistor is connected to the drain of the first switching transistor; the source of the first switching transistor is grounded; the third resistor is connected to the fourth resistor and the second volt detection voltage output port, respectively; the third resistor is connected to the drain of the second switching transistor; the source of the second switching transistor is grounded.

[0068] Furthermore, the temperature detection circuit includes: a first amplifier, a second amplifier, a first diode, a second diode, a first MOSFET, a second MOSFET, a third MOSFET, a fourth MOSFET, a fifth MOSFET, a sixth MOSFET, a seventh MOSFET, an eighth MOSFET, a ninth MOSFET, a tenth MOSFET, a temperature detection voltage output port, a temperature reference voltage output port, a fifth resistor, a sixth resistor, a seventh resistor, an eighth resistor, a ninth resistor, a tenth resistor, and an eleventh resistor;

[0069] The first input terminal of the first amplifier is connected to the fifth resistor and the seventh resistor, respectively; the second input terminal of the first amplifier is connected to the sixth resistor and the first diode, respectively; the output port of the first amplifier is connected to the gate of the first MOSFET, the gate of the second MOSFET, the gate of the third MOSFET, and the gate of the seventh MOSFET, respectively; the sixth resistor is connected to the source of the first MOSFET and the first diode, respectively; the drain of the first MOSFET is connected to the drain of the second MOSFET, the drain of the third MOSFET, the drain of the fifth MOSFET, the drain of the sixth MOSFET, the drain of the seventh MOSFET, the drain of the seventh MOSFET, and the drain of the eighth MOSFET, respectively; the first diode is connected to the second diode, the source of the fourth MOSFET, the ninth resistor, the source of the ninth MOSFET, the source of the tenth MOSFET, the tenth resistor, and the eleventh resistor, respectively; the second diode is connected to the fifth resistor; The seventh resistor is connected to the source of the second MOS transistor and the first input terminal of the second amplifier, respectively; the source of the second MOS transistor is connected to the first input terminal of the second amplifier; the drain of the fourth MOS transistor is connected to the source of the third MOS transistor and the gate of the fourth MOS transistor, respectively; the second input terminal of the second amplifier is connected to the eighth resistor and the ninth resistor, respectively; the output terminal of the second amplifier is connected to the gate of the fifth MOS transistor, the gate of the sixth MOS transistor, and the gate of the eighth MOS transistor, respectively; the drain of the ninth MOS transistor is connected to the source of the sixth MOS transistor and the gate of the ninth MOS transistor, respectively; the gate of the ninth MOS transistor is connected to the gate of the tenth MOS transistor; the source of the seventh MOS transistor is connected to the drain of the tenth MOS transistor and the temperature detection voltage output port, respectively; the temperature detection voltage output port is connected to the tenth resistor; the source of the eighth MOS transistor is connected to the eleventh resistor and the temperature reference voltage output port, respectively. Attached Figure Description

[0070] Figure 1 This is a flowchart illustrating a PVT detection method according to a certain embodiment of the present invention;

[0071] Figure 2 This is a schematic diagram of the structure of a PVT detection system according to a certain embodiment of the present invention;

[0072] Figure 3 This is a schematic diagram of the detection voltage generation module structure of a PVT detection system according to a certain embodiment of the present invention;

[0073] Figure 4This is a schematic diagram of the reference voltage generation module structure of a PVT detection system according to a certain embodiment of the present invention;

[0074] Figure 5 This is a schematic diagram of the analog-to-digital conversion module structure of a PVT detection system according to a certain embodiment of the present invention;

[0075] Figure 6 A schematic diagram of the digital storage and detection result output module of a PVT detection system provided in a certain embodiment of the present invention;

[0076] Figure 7 This is a schematic diagram of a PVT detection circuit according to a certain embodiment of the present invention;

[0077] Figure 8 A schematic diagram of a voltage detection circuit structure for a PVT detection circuit according to a certain embodiment of the present invention;

[0078] Figure 9 This is a schematic diagram of the temperature detection circuit structure of a PVT detection circuit according to a certain embodiment of the present invention;

[0079] Figure 10 This is a schematic diagram of the digital circuit operation of a PVT detection circuit provided in one embodiment of the present invention. Detailed Implementation

[0080] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0081] Example 1

[0082] See Figure 1 , Figure 1 This is a schematic flowchart illustrating a PVT detection method according to one embodiment of the present invention. Figure 1 As shown, this invention proposes a PVT detection method, including steps 101 to 104, the specific details of which are as follows:

[0083] Step 101: Perform process detection, voltage detection and temperature detection on the first sample respectively to obtain the process detection voltage, voltage detection voltage and temperature detection voltage.

[0084] As an example of this embodiment, the factory process parameters of the first sample are collected; the positive temperature coefficient current and the negative temperature coefficient current are obtained through the voltage relationship within the factory process parameters of the first sample; wherein, the positive temperature coefficient PTAT current is mirrored from the temperature detection circuit, and the negative temperature coefficient current can be obtained by calculating the V of the subthreshold MOSFET. GS formula:

[0085]

[0086] Among them, K G For a negative number, it can be expressed as:

[0087]

[0088] Where, θ T V is the substrate implantation coefficient. OFF V is a fixed value in the BSIM3v3 model. TH V is the threshold voltage of the MOSFET, which varies at different process corners. TH When the fast angle is FN, V TH When the slow angle SN is smaller, V TH The value is relatively large. This yields negative temperature coefficient voltages that are parallel at different process angles.

[0089] Temperature coefficient settings are applied to the positive temperature coefficient current and the negative temperature coefficient current to obtain a zero temperature coefficient current; this zero temperature coefficient current is then converted into the process detection voltage. Specifically, I... CTAT and I PTAT The sum of these values ​​yields a voltage with zero temperature coefficient.

[0090] The high-voltage power domain and low-voltage power domain of the first sample are detected respectively to generate the volt detection voltage;

[0091] The junction area parameters of the first sample are collected. Utilizing the principle that, under the same current, the voltage difference between PN junctions with different junction areas is proportional to temperature, the junction area parameters are processed by current mirroring to obtain the temperature detection voltage V. PTAT_TEMP ,in,

[0092]

[0093] In the formula, X and Y are the ratios of the corresponding MOS transistor channel width W to channel length L, respectively.

[0094] Step 102: Perform process reference voltage generation processing, voltage reference voltage generation processing, and temperature reference voltage generation processing on the first sample respectively to obtain process reference voltage, voltage reference voltage, and temperature reference voltage.

[0095] As an example of this embodiment.

[0096] Simulations were performed on the factory-set TN and TP angle models to obtain the temperature coefficient compensation current I2. Based on the voltage relationship within the factory process parameters of the first sample, the reference voltage V was obtained. BG ,in,

[0097]

[0098]

[0099] In the formula, V BE2 This represents the base-emitter voltage difference of the transistor.

[0100] The reference voltage V BG Converted to a reference current I5, and subjected to parameter elimination mirroring, the process reference voltage V is obtained. REF_MOS ,in,

[0101]

[0102]

[0103] In the formula, X is the ratio of the corresponding MOS transistor channel width W to the channel length L.

[0104] The high-voltage power domain V of the factory-set sample was tested respectively. VOLT_VDD1 and low-voltage power domain V VOLT_VDD2 This generates a reference voltage that is within the input range of the ADC, and by default, it is best to have the same reference voltage as the bandgap reference output.

[0105] The junction area parameters of the factory-set sample are collected and set to a reference voltage V that does not change with temperature. BG ,

[0106]

[0107] The temperature coefficient of resistance is eliminated by multiplying the current through a resistor of the same type to obtain a new reference voltage. Current mirroring is then applied to the junction area parameters to obtain suitable starting and ending voltages that satisfy the input range of the subsequent ADC, thus yielding the temperature reference voltage V. REF_TEMP ,in,

[0108]

[0109]

[0110] In the formula, Z is the ratio of the corresponding MOS transistor channel width W to the channel length L.

[0111] In the PVT detection method provided in this embodiment, the process reference voltage generation process and the temperature reference voltage generation process both use the same reference voltage and reference current for calculation, which will not be described in detail here.

[0112] Step 103: Quantize and differentiate the process detection voltage, the process reference voltage, the voltage detection voltage, the voltage reference voltage, the temperature detection voltage, and the temperature reference voltage to obtain the process code, voltage code, and temperature code.

[0113] As an example of this embodiment, the process detection voltage, the process reference voltage, the voltage detection voltage, the voltage reference voltage, the temperature detection voltage, and the temperature reference voltage are respectively subjected to digital-to-analog quantization calculations to obtain the digital codes for the detected quantized process voltage, the reference quantized process voltage, the detected quantized voltage voltage, the reference quantized voltage voltage, the detected quantized temperature voltage, and the reference quantized temperature voltage. The process detection voltage and the process reference voltage are sequentially fed into an ADC for quantization to obtain corresponding digital codes. Subtraction of these codes yields the process code for the MOS transistor, reducing errors caused by various mismatches in the ADC. The voltage detection voltage and the voltage reference voltage are respectively compared with the reference voltage V of the bandgap reference. REF_BG The input is quantized by the ADC to obtain the corresponding digital code. Subtracting these values ​​yields the voltage code, reducing errors caused by various ADC mismatches. Wherein, V... REF_BG Generally, an off-chip filter capacitor is used. Therefore, during use, the reference voltage can be adjusted to the standard value through TRIM to reduce the absolute error of the voltage code. The temperature detection voltage and the temperature reference voltage are quantized by the input ADC and subtracted to obtain the temperature code, thereby reducing the error caused by various mismatches of the ADC.

[0114] Based on the digital codes DOUT_PROC_NMOS<7:0> (detection quantization process voltage), DOUT_REF_NMOS<7:0> (reference quantization process voltage), DOUT_VOLT_VDD1<7:0> and DOUT_VOLT_VDD2<7:0> (detection quantization voltage), DOUT_REF_BG<7:0> (reference quantization voltage), DOUT_PTAT_TEMP<7:0> (detection quantization temperature voltage), and DOUT_REF_TEMP<7:0> (reference quantization temperature voltage), differential operations are performed to obtain the process code, the voltage code, and the temperature code. The process code consists of a process discrimination bit and a first basic digital code; the voltage code consists of a voltage discrimination bit and a second basic digital code; and the temperature code consists of a temperature discrimination bit and a third basic digital code.

[0115] Step 104: Based on the process code, the voltage code, and the temperature code, determine the degree of process angle deviation of the first sample, the degree of voltage deviation of the sample, and the degree of temperature deviation of the sample, to obtain the PVT detection result of the first sample.

[0116] As an example of this embodiment, when the process discrimination bit of the process code is determined to be positive, it is determined that the process angle of the first sample is biased towards a slow angle; when the highest bit of the process code is determined to be negative, it is determined that the process angle of the first sample is biased towards a fast angle; the larger the first basic digital code, the greater the deviation of the first sample, thus obtaining the process detection result; wherein the NMOS process code is an offset binary, and the highest bit represents the sign. A positive highest bit indicates a bias towards a slow angle SN, and a negative highest bit indicates a bias towards a fast angle FN. The larger the last 8 bits, the greater the deviation from the typical process angle; the PMOS process code is an offset binary, and the highest bit represents the sign. A positive highest bit indicates a bias towards a fast angle FP, and a negative highest bit indicates a bias towards a slow angle SP. The larger the last 8 bits, the greater the deviation from the typical process angle.

[0117] When the voltage discrimination bit of the voltage code is positive, it is determined that the voltage of the first sample is higher than the reference voltage. When the voltage discrimination bit of the voltage code is negative, it is determined that the voltage of the first sample is lower than the reference voltage. The larger the second basic digital code, the greater the deviation of the first sample from the reference voltage, thus obtaining the voltage detection result. The voltage code is an offset binary code, with the highest bit representing the sign. A positive highest bit indicates a voltage higher than the default voltage, and a negative highest bit indicates a voltage lower than the default voltage. The larger the last 8 bits, the greater the deviation from the default voltage, with the degree of deviation corresponding to the resistor voltage divider setting.

[0118] When the temperature discrimination bit of the temperature code is positive, it indicates that the temperature of the first sample is higher than the reference temperature; when the temperature discrimination bit of the temperature code is negative, it indicates that the temperature of the first sample is lower than the reference temperature. The larger the third basic digit code, the greater the deviation of the first sample's temperature from the reference temperature. The temperature detection result is obtained. The temperature code is an offset binary code, with the highest bit representing the sign. A positive highest bit indicates a temperature higher than the default temperature, and a negative highest bit indicates a temperature lower than the default temperature. The larger the last 8 digits, the greater the deviation from the default temperature.

[0119] Based on the process detection results, the voltage detection results, and the temperature detection results, the PVT detection results of the first sample are obtained.

[0120] The present invention provides a PVT detection method that can detect the process, voltage, and temperature deviations of a chip. By obtaining the detection code through a fully static voltage quantization method, the problem of dynamic comparison structure being easily affected by temperature, voltage, and process can be avoided, thereby improving the accuracy of chip detection results.

[0121] Example 2

[0122] See Figure 2 , Figure 2 This is a schematic diagram of a PVT detection system provided in one embodiment of the present invention. Figure 2 As shown, the present invention proposes a PVT detection system, including: a detection voltage generation module 201, a reference voltage generation module 202, an analog-to-digital conversion module 203, and a digital storage and detection result output module 204;

[0123] The detection voltage generation module 201 is used to perform process detection, voltage detection and temperature detection on the first sample respectively to obtain process detection voltage, voltage detection voltage and temperature detection voltage;

[0124] As an example of this embodiment, see Figure 3 , Figure 3 This is a schematic diagram of the detection voltage generation module of a PVT system according to a certain embodiment of the present invention. Figure 3 As shown, the detection voltage generation module 201 includes: a process detection unit 301, a voltage detection unit 302, and a temperature detection unit 303;

[0125] The process detection unit 301 is used to collect the factory process parameters of the first sample; obtain the positive temperature coefficient current and the negative temperature coefficient current through the voltage relationship within the factory process parameters of the first sample; set the temperature coefficient of the positive temperature coefficient current and the negative temperature coefficient current to obtain the zero temperature coefficient current; and convert the zero temperature coefficient current into the process detection voltage V. PROC_MOS ;

[0126] The volt detection unit 302 is used to detect the high-voltage power domain and the low-voltage power domain of the first sample respectively, and generate the volt detection voltage.

[0127] The temperature detection unit 303 is used to collect the junction area parameters of the first sample, and perform current mirroring on the junction area parameters to obtain the temperature detection voltage V. PTAT_TEMP .

[0128] The reference voltage generation module 202 is used to perform process reference voltage generation processing, voltage reference voltage generation processing and temperature reference voltage generation processing on the first sample respectively to obtain process reference voltage, voltage reference voltage and temperature reference voltage.

[0129] As an example of this embodiment, see Figure 4 , Figure 4 This is a schematic diagram of a reference voltage generation module structure for a PVT system according to a certain embodiment of the present invention. Figure 4 As shown, the reference voltage generation module 202 includes: a process reference voltage generation unit 401, an electric voltage reference voltage generation unit 402, and a temperature reference voltage generation unit 403.

[0130] The process reference voltage generation unit 401 is used to obtain a reference voltage based on the voltage relationship within the factory process parameters of the first sample, convert the reference voltage into a reference current, perform parameter elimination and mirroring processing, and obtain the process reference voltage V. REF_MOS ;

[0131] The voltage reference voltage generation unit 402 is used to detect the high voltage power domain and low voltage power domain of the factory-set sample respectively, and generate the voltage reference voltage.

[0132] The temperature reference voltage generation unit 403 is used to collect the junction area parameters of the factory-set sample, and perform current mirroring on the junction area parameters to obtain the temperature reference voltage V. REF_TEMP .

[0133] The analog-to-digital conversion module 203 is used to quantize and differentiate the process detection voltage, the process reference voltage, the voltage detection voltage, the voltage reference voltage, the temperature detection voltage, and the temperature reference voltage to obtain the process code, voltage code, and temperature code.

[0134] As an example of this embodiment, see Figure 5 , Figure 5 This is a schematic diagram of the analog-to-digital conversion module structure of a PVT detection system according to a certain embodiment of the present invention. Figure 5 As shown, the analog-to-digital conversion module 203 includes: a process quantization differential unit 501, an electric voltage quantization differential unit 502, and a temperature quantization differential unit 503;

[0135] The process quantization differential unit 501 is used to perform digital-to-analog quantization calculations on the process detection voltage and the process reference voltage respectively to obtain the detection quantized process voltage digital code and the reference quantized process voltage digital code, and then perform differential operation to obtain the process code.

[0136] The voltage quantization differential unit 502 is used to perform digital-to-analog quantization calculations on the voltage detection voltage and the voltage reference voltage respectively to obtain the detection quantized voltage voltage digital code and the reference quantized voltage voltage digital code, and then perform differential operation to obtain the voltage code.

[0137] The temperature quantization differential unit 503 is used to perform digital-to-analog quantization calculations on the temperature detection voltage and the temperature reference voltage respectively to obtain the digital code of the detected quantized temperature voltage and the digital code of the reference quantized temperature voltage, and then perform differential operation to obtain the temperature code.

[0138] The process code consists of a process discrimination bit and a first basic digital code; the voltage code consists of a voltage discrimination bit and a second basic digital code; and the temperature code consists of a temperature discrimination bit and a third basic digital code.

[0139] The digital storage and detection result output module 204 is used to determine the degree of process angle deviation of the first sample, the degree of voltage deviation of the sample, and the degree of temperature deviation of the sample based on the process code, the voltage code, and the temperature code, so as to obtain the PVT detection result of the first sample.

[0140] As an example of this embodiment, see Figure 6 , Figure 6 This is a schematic diagram of the digital storage and detection result output module structure of a PVT detection system according to a certain embodiment of the present invention. Figure 6 As shown, the digital storage and detection result output module 204 includes: a process deviation judgment unit 601, a voltage deviation judgment unit 602, a temperature deviation judgment unit 603, and a detection result output unit 604;

[0141] The process deviation judgment unit 601 is used to determine that the process angle of the first sample is biased towards a slow angle when the process discrimination bit of the process code is positive, and to determine that the process angle of the first sample is biased towards a fast angle when the highest bit of the process code is negative. It is also used to determine that the larger the first basic digital code is, the greater the deviation of the first sample is, and to obtain the process detection result.

[0142] As another example of this embodiment, when it is determined that the judgment flag of the process code is positive and the first sample is an NMOS process detection, it is determined that the process angle of the first sample is biased towards the slow angle SN.

[0143] When it is determined that the judgment flag bit of the process code is negative and the first sample is an NMOS process detection, the process angle of the first sample is determined to be fast angle FN;

[0144] When it is determined that the judgment flag of the process code is positive and the first sample is a PMOS process detection, the process angle of the first sample is determined to be fast angle FN;

[0145] When the judgment flag of the process code is determined to be negative and the first sample is detected by PMOS process, the process angle of the first sample is determined to be biased towards the slow angle SN.

[0146] The larger the value of the basic digital code, the greater the deviation of the process angle of the first sample. That is, the larger the value of the last M-1 digits, the greater the deviation from the typical process angle.

[0147] Based on the deviation angle judgment result of the judgment flag and the deviation degree judgment result of the basic digital code, the process detection result of the first sample is obtained.

[0148] The voltage deviation judgment unit 602 is used to determine that the voltage of the first sample is higher than the reference voltage when the voltage discrimination bit of the voltage code is positive, and to determine that the voltage of the first sample is lower than the reference voltage when the voltage discrimination bit of the voltage code is negative. It also determines that the larger the second basic digital code is, the more the first sample deviates from the reference voltage, and obtains the voltage detection result.

[0149] The temperature deviation judgment unit 603 is used to determine that the temperature of the first sample is higher than the reference temperature when the temperature discrimination bit of the temperature code is positive, and to determine that the temperature of the first sample is lower than the reference temperature when the temperature discrimination bit of the temperature code is negative. It also determines that the larger the third basic digital code is, the more the temperature of the first sample deviates from the reference temperature, and obtains the temperature detection result.

[0150] The detection result output unit 604 is used to obtain the PVT detection result of the first sample based on the process detection result, the voltage detection result, and the temperature detection result.

[0151] The PVT detection system provided in this invention generates a fully static voltage through a module, then quantizes it to obtain a digital code. The degree of deviation is judged by the digital code. It can also automatically adjust the working state of other circuits to compensate for the effects of process, voltage, and temperature deviations. This greatly alleviates the strict constraints in the design process of other circuits of the chip, optimizes the chip power consumption under different process, voltage, and temperature conditions, and thus improves the accuracy of the measurement results when affected by external factors.

[0152] Example 3

[0153] See Figure 7 , Figure 7 This is a schematic diagram of a PVT detection circuit provided in one embodiment of the present invention.

[0154] like Figure 7 As shown, the present invention proposes a PVT detection circuit, comprising:

[0155] Bandgap reference source circuit, process detection circuit, voltage detection circuit, temperature detection circuit, multiplexer, analog-to-digital converter, digital circuit and register;

[0156] The bandgap reference source circuit, the process detection circuit, the voltage detection circuit, and the temperature detection circuit are connected to the analog-to-digital converter via the multiplexer;

[0157] The digital circuit is connected to the register; the digital circuit is connected to the analog-to-digital converter.

[0158] The bandgap reference source circuit is used to generate a bias voltage;

[0159] The process detection circuit is used to generate the process detection voltage and the corresponding process reference voltage;

[0160] The voltage detection circuit is used to generate the voltage detection voltage and the corresponding voltage reference voltage;

[0161] As an example of this embodiment, see Figure 8 , Figure 8 This is a schematic diagram of a voltage detection circuit structure for a PVT detection circuit according to a certain embodiment of the present invention. Figure 8 As shown, the present invention proposes a voltage detection circuit for a PVT detection circuit, comprising: a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a first voltage detection output port, a second voltage detection output port, a first switch S1, and a second switch S2.

[0162] The first resistor R1 is connected to the second resistor R2 and the first volt detection voltage output port respectively; the second resistor R2 is connected to the drain of the first switch S1; the source of the first switch S1 is grounded; the third resistor R3 is connected to the fourth resistor R4 and the second volt detection voltage output port respectively; the third resistor R3 is connected to the drain of the second switch S2; the source of the second switch S2 is grounded.

[0163] As another example of this embodiment, resistors R1 and R2 are connected. During normal testing, control S1 is in the on state, and the impedance is much smaller than that of R1 and R2. After the test is completed, control S1 is turned off, thus reducing the static power consumption of resistors R1 and R2. Therefore:

[0164]

[0165] Similarly, the voltage domain formula for VDD2 is obtained:

[0166]

[0167] The temperature detection circuit is used to generate the temperature detection voltage and the corresponding temperature reference voltage;

[0168] As an example of this embodiment, see Figure 9 , Figure 9 This is a schematic diagram of a temperature detection circuit structure for a PVT detection circuit according to a certain embodiment of the present invention. Figure 9 As shown, this invention proposes a temperature detection circuit for a PVT detection circuit, comprising: a first amplifier OP1, a second amplifier OP2, a first diode Q1, a second diode Q2, a first MOSFET M1, a second MOSFET M2, a third MOSFET M3, a fourth MOSFET M4, a fifth MOSFET M5, a sixth MOSFET M6, a seventh MOSFET M7, an eighth MOSFET M8, a ninth MOSFET M9, and a tenth MOSFET M1. 10 Temperature detection voltage output port, temperature reference voltage output port, fifth resistor R5, sixth resistor R6, seventh resistor R7, eighth resistor R8, ninth resistor R9, tenth resistor R 10 Eleventh resistor R 11 ;

[0169] The first input terminal of the first amplifier OP1 is connected to the fifth resistor R5 and the seventh resistor R7, respectively; the second input terminal of the first amplifier OP1 is connected to the sixth resistor R6 and the first diode Q1, respectively; the output port of the first amplifier OP1 is connected to the gate of the first MOSFET M1, the gate of the second MOSFET M2, the gate of the third MOSFET M3, and the gate of the seventh MOSFET M7, respectively; the sixth resistor R6 is connected to the source of the first MOSFET M1 and the first diode Q1, respectively; the drain of the first MOSFET M1 is connected to the drain of the second MOSFET M2, the drain of the third MOSFET M3, the drain of the fifth MOSFET M5, the drain of the sixth MOSFET M6, the drain of the seventh MOSFET M7, the drain of the seventh MOSFET M7, and the drain of the eighth MOSFET M8, respectively; the first diode Q1 is connected to the second diode Q2, the source of the fourth MOSFET M4, the ninth resistor R9, the source of the ninth MOSFET M9, and the tenth MOSFET M1, respectively. 10 The source, the tenth resistor R 10 and the eleventh resistor R 11Connections are made as follows: the second diode Q2 is connected to the fifth resistor R5; the seventh resistor R7 is connected to the source of the second MOS transistor M2 and the first input terminal of the second amplifier OP2; the source of the second MOS transistor M2 is connected to the first input terminal of the second amplifier OP2; the drain of the fourth MOS transistor M4 is connected to the source of the third MOS transistor M3 and the gate of the fourth MOS transistor M4; the second input terminal of the second amplifier OP2 is connected to the eighth resistor R8 and the ninth resistor R9; the output terminal of the second amplifier OP2 is connected to the gate of the fifth MOS transistor M5, the gate of the sixth MOS transistor M6, and the gate of the eighth MOS transistor M8; the drain of the ninth MOS transistor M9 is connected to the source of the sixth MOS transistor M6 and the gate of the ninth MOS transistor M9; the gate of the ninth MOS transistor M9 is connected to the tenth MOS transistor M... 10 The gate of the seventh MOS transistor M7 is connected to the gate of the tenth MOS transistor M7. 10 The drain of the resistor is connected to the temperature detection voltage output port; the temperature detection voltage output port is connected to the tenth resistor R. 10 Connection; the source of the eighth MOS transistor M8 is connected to the eleventh resistor R. 11 Connect to the temperature reference voltage output port.

[0170] As an example of this embodiment, the base-emitter voltage difference of the transistor is:

[0171]

[0172]

[0173] Where k is Boltzmann's constant and T is the absolute temperature. M1 and M2 have the same ratio, and the input voltage of OP1 is equal; therefore:

[0174] I 2R5+V BE2 =V BE1

[0175] therefore:

[0176]

[0177] In IPTAT and V BG In the generation circuit, the PTAT current I2 flows through R5 and R7 to generate the voltage, which is affected by the voltage drop V of the transistor. BE With a negative temperature coefficient, a reference voltage V that does not change with temperature can be obtained by appropriately setting parameters R5 and R7. BG :

[0178]

[0179] The W / L ratio of M7 to M2 is Y, and I2 is obtained after mirroring:

[0180]

[0181] in I REF In the generation circuit, V is generated through the negative feedback of OP2. BG Since the voltage across R9 is virtually shorted, the current flowing through R9 is:

[0182]

[0183] The W / L ratio of M6 to M5 is X, and I5 is obtained after mirroring:

[0184]

[0185] M9 and M 10 The W / L ratio is 1, I PTAT and I REF After subtraction, the stream flows through R 10 ,get:

[0186]

[0187] like Figure 9 As shown in the coordinate curve, by adjusting Y, V increases PTAT The slope, and by adjusting X to V PTAT The curve is shifted downwards to obtain suitable starting and ending voltages, which meet the input range of the subsequent ADC.

[0188] The W / L ratio of M8 to M5 is Z, and I5 is obtained after mirroring:

[0189]

[0190] I8 flows through R 11 ,get:

[0191]

[0192] In the above formula, X, Y, and Z are the ratios of the corresponding MOS transistor channel width W to the channel length L, respectively.

[0193] The multiplexer is used for data transmission between the bandgap reference source circuit, the process detection circuit, the voltage detection circuit, the temperature detection circuit, and the analog-to-digital converter; the analog-to-digital converter is used to generate digital codes; and the digital circuit is used to issue control signals.

[0194] As an example of this embodiment, the main function of the digital circuit is to control the multiplexer MUX to select the output voltages of the three detection circuits according to the timing sequence, and to read the quantization results of the ADC according to the timing sequence. Then, it calculates the temperature code, voltage code, and process code respectively, and stores them in designated registers for use by other modules of the chip. The signal controlling the MUX is MUX_CTRL<3:0>, and its function is shown in Table 1. (See also...) Figure 10 , Figure 10 A schematic diagram of the digital circuit operation of a PVT detection circuit according to a certain embodiment of the present invention is shown below. Figure 10 As shown, after the chip powers on, by default, MUX_CTRL<3:0> = 0000. At this time, all detection circuits are off, and the digital part remains reset. Then, MUX_CTRL<3:0> sequentially switches from 0001 to 1001, quantizing the nine voltages in the table into nine digital signals. Each quantized signal needs to be averaged multiple times. After all quantizations are completed, MUX_CTRL<3:0> returns to the 0000 state, keeping the digital circuits off, and simultaneously controlling the three detection circuits to turn off as well. Finally, the detection code is sent to the register after the calculation is complete. Therefore, after the chip is calibrated upon power-on, both analog and digital circuits can be turned off, leaving only the register leakage power consumption. It is assumed that the ADC is 8-bit.

[0195] Table 1 MUX_CTRL<3:0> Function List

[0196]

[0197]

[0198] After reading 9 voltage quantization results, the calculations in Table 2 are performed to obtain 5 detection codes:

[0199] The PMOS process code PROCESS_CODE_PMOS<8:0>, the NMOS process code PROCESS_CODE_NMOS<8:0>, the first power supply voltage code VDD1_CODE<8:0>, the second power supply voltage code VDD2_CODE<8:0>, and the temperature code TEMP_CODE<8:0>, wherein the first power supply voltage code and the second power supply voltage code constitute the voltage code.

[0200] Table 2 Quantitative Calculation Table

[0201] Detection code Digital algorithm calculation TEMP_CODE<8:0> DOUT PTAT TEMP<7:0> - DOUT REF TEMP<7:0> VDD1_CODE<8:0> DOUT_VOLT_VDD1<7:0> - DOUT_REF_BG<7:0> VDD2_CODE<8:0> DOUT_VOLT_VDD2<7:0> - DOUT_REF_BG<7:0> PROCESS_CODE_PMOS<8:0> DOUT PROC PMOS <7:0> - DOUT REF PMOS <7:0> PROCESS_CODE_NMOS<8:0> DOUT PROC NMOS <7:0> - DOUT REF NMOS <7:0>

[0202] The MUX selects the ADC to quantize the data sequentially, resulting in DOUT_PTAT_TEMP<7:0> and DOUT_REF_TEMP<7:0> respectively. The data is then read into the digital circuit for calculation: TEMP_CODE<8:0> = DOUT_PTAT_TEMP<7:0> - DOUT_REF_TEMP<7:0>. Finally, the data is stored in the register.

[0203] The MUX selects the ADC to quantize the data sequentially, resulting in DOUT_VOLT_VDD1<7:0>, DOUT_VOLT_VDD2<7:0>, and DOUT_REF_BG<7:0>. These values ​​are then read into the digital circuit for calculation: VDD1_CODE<8:0> = DOUT_VOLT_VDD1<7:0> - DOUT_REF_BG<7:0>; VDD2_CODE<8:0> = DOUT_VOLT_VDD2<7:0> - DOUT_REF_BG<7:0>. Finally, the data is stored in the register.

[0204] The MUX selects the sequentially fed into the ADC for quantization, resulting in DOUT_PROC_NMOS<7:0> and DOUT_REF_NMOS<7:0> respectively;

[0205] The data is read into the digital circuit for calculation: PROCESS_CODE_NMOS<8:0> = DOUT_PROC_NMOS<7:0> - DOUT_REF_NMOS<7:0>; and finally stored in the register.

[0206] The MUX selects the sequentially fed into the ADC for quantization, resulting in DOUT_PROC_PMOS<7:0> and DOUT_REF_PMOS<7:0> respectively;

[0207] The data is read into the digital circuit for calculation: PROCESS_CODE_PMOS<8:0> = DOUT_PROC_PMOS<7:0> - DOUT_REF_PMOS<7:0>; and finally stored in the register.

[0208] The register is used to store the digital code;

[0209] This invention provides a PVT detection circuit. Each detection module has advantages such as simple circuit structure, few components, small chip area, and complete shutdown after detection. The temperature detection circuit and process detection circuit are closely related and can be repeatedly called to detect the temperature and process corner of different parts of the chip respectively. Nine voltage signals are multiplexed by a digital-to-analog converter and quantized sequentially through a simple digital algorithm, which can greatly reduce on-chip resource consumption. The final multi-byte quantization result can accurately represent the deviation of temperature, voltage, and process, rather than just three simple results. It can be called by other modules to accurately compensate for the impact of process, voltage, and temperature deviations, greatly alleviate the strict constraints in the design process of other chip circuits, optimize chip power consumption under different process, voltage, and temperature conditions, and improve the accuracy of measurement results.

[0210] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the technical principles of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

[0211] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of those different embodiments or examples.

[0212] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "a plurality of" means two or more, unless otherwise explicitly specified.

Claims

1. A PVT detection method, characterized in that, include: The first sample is subjected to process testing, voltage testing, and temperature testing respectively to obtain the process testing voltage, voltage testing voltage, and temperature testing voltage. Specifically, the factory process parameters of the first sample are collected; the positive temperature coefficient current and negative temperature coefficient current are obtained through the voltage relationship within the factory process parameters of the first sample; the temperature coefficients of the positive temperature coefficient current and the negative temperature coefficient current are set to obtain the zero temperature coefficient current; and the zero temperature coefficient current is converted into the process testing voltage. The high-voltage power domain and low-voltage power domain of the first sample are detected respectively to generate the voltage detection voltage; the junction area parameters of the first sample are collected, and the junction area parameters are subjected to current mirroring to obtain the temperature detection voltage. The first sample is subjected to process reference voltage generation processing, voltage reference voltage generation processing, and temperature reference voltage generation processing respectively to obtain process reference voltage, voltage reference voltage, and temperature reference voltage. Specifically, according to the voltage relationship within the factory process parameters of the first sample, a reference voltage is obtained, the reference voltage is converted into a reference current, and parameter elimination mirroring processing is performed to obtain the process reference voltage. The high-voltage power domain and low-voltage power domain of the first sample are detected respectively to generate the reference voltage. The junction area parameters of the first sample are collected, and the temperature reference voltage is obtained by performing parameter elimination and mirroring processing based on the relationship between the junction area parameters and the reference voltage. The process detection voltage, the process reference voltage, the voltage detection voltage, the voltage reference voltage, the temperature detection voltage, and the temperature reference voltage are quantized and differentially analyzed to obtain the process code, voltage code, and temperature code. Based on the process code, the voltage code, and the temperature code, the degree of process angle deviation of the first sample, the degree of voltage deviation of the sample, and the degree of temperature deviation of the sample are determined to obtain the PVT test result of the first sample.

2. The PVT detection method as described in claim 1, characterized in that, The process detection voltage, the process reference voltage, the voltage detection voltage, the voltage reference voltage, the temperature detection voltage, and the temperature reference voltage are quantized and differentially analyzed to obtain the process code, voltage code, and temperature code, specifically as follows: The process detection voltage, the process reference voltage, the volt detection voltage, the volt reference voltage, the temperature detection voltage, and the temperature reference voltage are respectively subjected to digital-to-analog quantization calculations to obtain the digital code of the detected quantized process voltage, the digital code of the reference quantized process voltage, the digital code of the detected quantized volt voltage, the digital code of the reference quantized volt voltage, the digital code of the detected quantized temperature voltage, and the digital code of the reference quantized temperature voltage. Based on the digital codes for detected and quantized process voltage, reference quantized process voltage, detected and quantized volt voltage, reference quantized volt voltage, detected and quantized temperature voltage, and reference quantized temperature voltage, differential operations are performed to obtain the process code, the voltage code, and the temperature code. The process code consists of a process discrimination bit and a first basic digital code, the voltage code consists of a voltage discrimination bit and a second basic digital code, and the temperature code consists of a temperature discrimination bit and a third basic digital code.

3. The PVT detection method as described in claim 2, characterized in that, The process angle deviation, voltage deviation, and temperature deviation of the first sample are determined based on the process code, voltage code, and temperature code to obtain the PVT test result of the first sample. Specifically: Based on the sign of the judgment flag bit of the process code and the process detection type of the first sample, it is determined whether the process angle of the first sample is biased towards a fast angle or a slow angle; the larger the value of the first basic digital code, the greater the degree of deviation of the process angle of the first sample. Based on the deviation angle judgment result of the judgment flag and the deviation degree judgment result of the first basic digital code, the process detection result is obtained; When the voltage discrimination bit of the voltage code is determined to be positive, it is determined that the voltage of the first sample is higher than the reference voltage. When the voltage discrimination bit of the voltage code is determined to be negative, it is determined that the voltage of the first sample is lower than the reference voltage. The larger the second basic digital code is, the more the first sample deviates from the reference voltage, and a voltage detection result is obtained. When the temperature discrimination bit of the temperature code is determined to be positive, it is determined that the temperature of the first sample is higher than the reference temperature. When the temperature discrimination bit of the temperature code is determined to be negative, it is determined that the temperature of the first sample is lower than the reference temperature. The larger the third basic digital code is, the more the temperature of the first sample deviates from the reference temperature, and the temperature detection result is obtained. Based on the process detection results, the voltage detection results, and the temperature detection results, the PVT detection results of the first sample are obtained.

4. A PVT detection system, characterized in that, include: The system includes a detection voltage generation module, a reference voltage generation module, an analog-to-digital conversion module, and a digital storage and detection result output module. The detection voltage generation module is used to perform process detection, voltage detection, and temperature detection on the first sample respectively, to obtain process detection voltage, voltage detection voltage, and temperature detection voltage. It includes a process detection unit, a voltage detection unit, and a temperature detection unit. The process detection unit is used to collect the factory process parameters of the first sample; obtain positive temperature coefficient current and negative temperature coefficient current through the voltage relationship within the factory process parameters of the first sample; set the temperature coefficient of the positive temperature coefficient current and the negative temperature coefficient current to obtain a zero temperature coefficient current; and convert the zero temperature coefficient current into the process detection voltage. The voltage detection unit is used to detect the high-voltage power domain and low-voltage power domain of the first sample respectively, generating the voltage detection voltage. The temperature detection unit is used to collect the junction area parameters of the first sample, perform current mirroring on the junction area parameters, and obtain the temperature detection voltage. The reference voltage generation module is used to perform process reference voltage generation, voltage reference voltage generation, and temperature reference voltage generation on the first sample respectively to obtain a process reference voltage, a voltage reference voltage, and a temperature reference voltage. It includes a process reference voltage generation unit, a voltage reference voltage generation unit, and a temperature reference voltage generation unit. The process reference voltage generation unit is used to obtain a reference reference voltage based on the voltage relationship within the factory process parameters of the first sample, convert the reference reference voltage into a reference reference current, and perform parameter elimination mirroring processing to obtain the process reference voltage. The voltage reference voltage generation unit is used to detect the high-voltage power domain and the low-voltage power domain of the factory-set sample respectively to generate the voltage reference voltage. The temperature reference voltage generation unit is used to collect the junction area parameters of the first sample, and perform parameter elimination mirroring processing based on the relationship between the junction area parameters and the reference reference voltage to obtain the temperature reference voltage. The analog-to-digital conversion module is used to quantize and differentiate the process detection voltage, the process reference voltage, the voltage detection voltage, the voltage reference voltage, the temperature detection voltage, and the temperature reference voltage to obtain the process code, voltage code, and temperature code. The digital storage and detection result output module is used to determine the degree of process angle deviation, the degree of voltage deviation, and the degree of temperature deviation of the first sample based on the process code, the voltage code, and the temperature code, and to obtain the PVT detection result of the first sample.

5. The PVT detection system as described in claim 4, characterized in that, The analog-to-digital conversion module is used to quantize and differentiate the process detection voltage, the process reference voltage, the voltage detection voltage, the voltage reference voltage, the temperature detection voltage, and the temperature reference voltage to obtain a process code, a voltage code, and a temperature code, including: Process quantization differential unit, voltage quantization differential unit, and temperature quantization differential unit; The process quantization differential unit is used to perform digital-to-analog quantization calculations on the process detection voltage and the process reference voltage respectively to obtain the detection quantized process voltage digital code and the reference quantized process voltage digital code, and then perform differential operations to obtain the process code. The voltage quantization differential unit is used to perform digital-to-analog quantization calculations on the voltage detection voltage and the voltage reference voltage respectively to obtain the detection quantized voltage voltage digital code and the reference quantized voltage voltage digital code, and then perform differential operation to obtain the voltage code. The temperature quantization differential unit is used to perform digital-to-analog quantization calculations on the temperature detection voltage and the temperature reference voltage respectively to obtain the digital code of the detected quantized temperature voltage and the digital code of the reference quantized temperature voltage, and then perform differential operation to obtain the temperature code. The process code consists of a process discrimination bit and a first basic digital code; the voltage code consists of a voltage discrimination bit and a second basic digital code; and the temperature code consists of a temperature discrimination bit and a third basic digital code.

6. The PVT detection system as described in claim 5, characterized in that, The digital storage and detection result output module is used to determine the degree of process angle deviation, the degree of voltage deviation, and the degree of temperature deviation of the first sample based on the process code, the voltage code, and the temperature code, to obtain the PVT detection result of the first sample, including: Process deviation judgment unit, voltage deviation judgment unit, temperature deviation judgment unit, and detection result output unit; The process deviation judgment unit is used to determine whether the process angle of the first sample is biased towards a fast angle or a slow angle based on the sign of the judgment flag bit of the process code and the process detection type of the first sample; the larger the value of the first basic digital code, the greater the degree of process angle deviation of the first sample; and to obtain the process detection result based on the deviation angle judgment result of the judgment flag bit and the deviation degree judgment result of the first basic digital code. The voltage deviation judgment unit is used to determine that the voltage of the first sample is higher than the reference voltage when the voltage discrimination bit of the voltage code is positive, and to determine that the voltage of the first sample is lower than the reference voltage when the voltage discrimination bit of the voltage code is negative. It also determines that the larger the second basic digital code is, the more the first sample deviates from the reference voltage, and obtains the voltage detection result. The temperature deviation judgment unit is used to determine that the temperature of the first sample is higher than the reference temperature when the temperature discrimination bit of the temperature code is positive, and to determine that the temperature of the first sample is lower than the reference temperature when the temperature discrimination bit of the temperature code is negative. It also determines that the larger the third basic digital code is, the more the temperature of the first sample deviates from the reference temperature, and thus obtains the temperature detection result. The detection result output unit is used to obtain the PVT detection result of the first sample based on the process detection result, the voltage detection result, and the temperature detection result.

7. A PVT detection circuit, characterized in that, A PVT detection method as described in any one of claims 1 to 3 can be executed, comprising: Bandgap reference source circuit, process detection circuit, voltage detection circuit, temperature detection circuit, multiplexer, analog-to-digital converter, digital circuit and register; The bandgap reference source circuit, the process detection circuit, the voltage detection circuit, and the temperature detection circuit are connected to the analog-to-digital converter via the multiplexer; The digital circuit is connected to the register; the digital circuit is connected to the analog-to-digital converter. The bandgap reference source circuit is used to generate a bias voltage; The process detection circuit is used to generate the process detection voltage and the corresponding process reference voltage; The voltage detection circuit is used to generate the voltage detection voltage and the corresponding voltage reference voltage; The temperature detection circuit is used to generate the temperature detection voltage and the corresponding temperature reference voltage; The multiplexer is used for data transmission between the bandgap reference source circuit, the process detection circuit, the voltage detection circuit, the temperature detection circuit, and the analog-to-digital converter. The analog-to-digital converter is used to generate digital codes; The digital circuit is used to send control signals; The register is used to store the digital code.

8. The PVT detection circuit as described in claim 7, characterized in that, The voltage detection circuit includes: First resistor, second resistor, third resistor, fourth resistor, first volt detection voltage output port, second volt detection voltage output port, first switch and second switch; The first resistor is connected to the second resistor and the first volt detection voltage output port, respectively; the second resistor is connected to the drain of the first switching transistor; the source of the first switching transistor is grounded; the third resistor is connected to the fourth resistor and the second volt detection voltage output port, respectively; the third resistor is connected to the drain of the second switching transistor; the source of the second switching transistor is grounded.

9. A PVT detection circuit as described in claim 8, characterized in that, The temperature detection circuit includes: First amplifier, second amplifier, first diode, second diode, first MOSFET, second MOSFET, third MOSFET, fourth MOSFET, fifth MOSFET, sixth MOSFET, seventh MOSFET, eighth MOSFET, ninth MOSFET, tenth MOSFET, temperature detection voltage output port, temperature reference voltage output port, fifth resistor, sixth resistor, seventh resistor, eighth resistor, ninth resistor, tenth resistor and eleventh resistor; The first input terminal of the first amplifier is connected to the fifth resistor and the seventh resistor, respectively; the second input terminal of the first amplifier is connected to the sixth resistor and the first diode, respectively; the output port of the first amplifier is connected to the gate of the first MOSFET, the gate of the second MOSFET, the gate of the third MOSFET, and the gate of the seventh MOSFET, respectively; the sixth resistor is connected to the source of the first MOSFET and the first diode, respectively; the drain of the first MOSFET is connected to the drain of the second MOSFET, the drain of the third MOSFET, the drain of the fifth MOSFET, the drain of the sixth MOSFET, the drain of the seventh MOSFET, the drain of the seventh MOSFET, and the drain of the eighth MOSFET, respectively; the first diode is connected to the second diode, the source of the fourth MOSFET, the ninth resistor, the source of the ninth MOSFET, the source of the tenth MOSFET, the tenth resistor, and the eleventh resistor, respectively; the second diode is connected to the fifth resistor; The seventh resistor is connected to the source of the second MOS transistor and the first input terminal of the second amplifier, respectively; the source of the second MOS transistor is connected to the first input terminal of the second amplifier; the drain of the fourth MOS transistor is connected to the source of the third MOS transistor and the gate of the fourth MOS transistor, respectively; the second input terminal of the second amplifier is connected to the eighth resistor and the ninth resistor, respectively; the output terminal of the second amplifier is connected to the gate of the fifth MOS transistor, the gate of the sixth MOS transistor, and the gate of the eighth MOS transistor, respectively; the drain of the ninth MOS transistor is connected to the source of the sixth MOS transistor and the gate of the ninth MOS transistor, respectively; the gate of the ninth MOS transistor is connected to the gate of the tenth MOS transistor; the source of the seventh MOS transistor is connected to the drain of the tenth MOS transistor and the temperature detection voltage output port, respectively; the temperature detection voltage output port is connected to the tenth resistor; the source of the eighth MOS transistor is connected to the eleventh resistor and the temperature reference voltage output port, respectively.

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