SiC晶片表面形貌在位检测和定点研磨的系统
By using an in-situ detection and spot grinding system for SiC wafer surface morphology, the problems of material loss and low efficiency in the SiC wafer grinding process have been solved, achieving efficient and precise SiC wafer surface processing.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- 苏州博宏源设备股份有限公司
- Filing Date
- 2023-12-22
- Publication Date
- 2026-07-17
AI Technical Summary
Existing SiC wafers suffer from severe material loss and low efficiency during the grinding process, especially in the absence of in-situ precise measurement technology, which leads to the need to remove excessive material and increase processing costs.
A SiC wafer surface morphology in-situ detection and spot grinding system is adopted. Through a mesh generation module, a surface shape detection system module, a data processing module, and a control unit, the system can accurately detect and spot grind the SiC wafer surface, determine the datum surface and the amount to be processed, calculate the processing time, and control the grinding head to perform spot processing.
This technology enables efficient grinding of SiC wafers, reduces material loss, improves processing efficiency, and ensures that the surface flatness meets the expected precision requirements.
Smart Images
Figure CN117655909B_ABST