All-glass atomic gas cell and method of making same

Abstract

The application belongs to the field of atomic optics, and provides a full-glass atomic cell and a preparation method thereof. The method comprises the following steps: (1) providing a glass substrate, a first glass and a second glass; (2) processing the glass substrate by adopting laser cutting and wet etching process to form a cell through hole, an internal channel and a gas hole through hole on the glass substrate; (3) polishing the first surface and the second surface of the glass substrate; (4) bonding the first glass and the second glass on the polished first surface and the second surface respectively; (5) connecting a filling pipe on the gas hole channel; (6) vacuumizing through the filling pipe and filling alkali metal atoms to make the alkali metal atoms enter into the cell; and (7) sealing the filling pipe to form the full-glass atomic cell. The method is suitable for the preparation of micro atomic cells with various structures, and the process flow is simple, and the obtained full-glass atomic cell can realize six-side light transmission.

Description

Technical Field

[0001] This invention relates to the field of atomic optics, and more specifically, to an all-glass atomic gas cell and its preparation method. Background Technology

[0002] Atomic magnetometers, atomic gyroscopes, atomic communication devices, and atomic radars, all based on atomic gas cells, have been widely applied in various quantum sensing and quantum communication scenarios. However, due to their large size and high energy consumption, atomic devices based on atomic gas cells remain in the laboratory stage. Therefore, fabricating miniaturized atomic gas cells for use in various atomic devices is of paramount importance.

[0003] Currently, there are technologies for preparing atomic gas cells, such as glass blowing and anodic bonding. Among them, glass blowing is usually used to make atomic gas cells at the millimeter level and above. Atomic gas cells made by "glass-silicon-glass" anodic bonding have disadvantages such as low atomic purity, low vacuum degree and opacity on the sides, which limits their application scenarios.

[0004] Therefore, current methods for preparing all-glass atomic gas cells still need improvement. Summary of the Invention

[0005] The present invention aims to at least partially solve one of the technical problems in the related art.

[0006] In one aspect of the present invention, a method for preparing an all-glass atomic gas cell is provided, comprising the following steps:

[0007] (1) A glass substrate, a first glass and a second glass are provided; the glass substrate has a first surface, a second surface and a side surface disposed opposite to each other, and the first glass and the second glass are both polished glass;

[0008] (2) The glass substrate is processed by laser cutting and wet etching to form air chamber through holes, internal channels and air holes on the glass substrate. The air chamber through holes penetrate the first surface and the second surface of the glass substrate. The air holes are grooves formed on the side of the glass substrate. The internal channels connect the air chamber through holes and the air holes.

[0009] (3) Polish the first surface and the second surface of the glass substrate;

[0010] (4) Bond the first glass and the second glass to the polished first surface and the second surface respectively, so that air chambers and air pore channels are formed together between the first glass, the glass substrate and the second glass;

[0011] (5) Connect the injection pipe to the air vent channel;

[0012] (6) Vacuum the gas chamber through the injection tube and inject alkali metal atoms so that the alkali metal atoms enter the gas chamber through the gas pore channel and the internal channel;

[0013] (7) The filling tube is sealed to form an all-glass atomic gas chamber.

[0014] This invention forms an all-glass atomic gas cell by using laser cutting-assisted wet etching and photopolymer atom bonding. On the one hand, this method is applicable to the preparation of micro-miniature atomic gas cells with various three-dimensional structures, and the process is simple. It can also mass-produce array-level all-glass atomic gas cells. On the other hand, the method of this invention uses a filling tube for vacuuming and filling with alkali metal atoms, which can improve the purity of alkali metal atoms and reduce the entry of impurity gases. Moreover, this process does not need to be carried out in a glove box.

[0015] According to an embodiment of the present invention, the glass substrate, the first glass and the second glass each independently comprise quartz glass or borosilicate glass.

[0016] According to an embodiment of the present invention, the thicknesses of the glass substrate, the first glass, and the second glass are each independently 400 μm-2 mm.

[0017] According to an embodiment of the present invention, the length of the vent hole is 300μm-600μm and the width is 300μm-600μm.

[0018] According to an embodiment of the present invention, the length of the air chamber through hole is 200μm-2mm and the width is 200μm-2mm.

[0019] According to an embodiment of the present invention, the etching solution used in the wet etching process is an aqueous solution of an alkali, the chemical formula of which is M(OH). x M represents alkali metal or alkaline earth metal, and X is 1 or 2.

[0020] According to an embodiment of the present invention, the temperature of the wet etching is 60°C-90°C.

[0021] According to an embodiment of the present invention, the strong alkali solution is a KOH aqueous solution with a concentration of 5 mol / L-10 mol / L.

[0022] According to an embodiment of the present invention, in step (2), the number of air chamber through holes formed on the glass substrate is one.

[0023] According to an embodiment of the present invention, in step (2), a plurality of air chamber through holes are formed on the glass substrate in an array, and the plurality of air chamber through holes are arranged in n rows and m columns, where n and m are integers greater than 1. The internal channel includes one main channel, n row channels and n×m sub-channels, wherein the main channel is connected in parallel with the n row channels, each row channel is connected with m sub-channels, and the m sub-channels are connected to the m air chamber through holes one by one.

[0024] According to an embodiment of the present invention, the method further includes: step (8) heating and sealing each sub-channel.

[0025] In another aspect of the invention, an all-glass atomic gas cell prepared by the aforementioned method is proposed. This all-glass atomic gas cell is light-transmitting on all six sides. Attached Figure Description

[0026] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which:

[0027] Figure 1 A schematic diagram of a single air chamber through-hole is shown;

[0028] Figure 2 A schematic diagram of the array of air chamber through holes is shown;

[0029] Figure 3 A schematic diagram of a CO2 laser local heating subchannel is shown;

[0030] Figure 4 A schematic diagram of the all-glass atomic gas chamber is shown.

[0031] Explanation of reference numerals in the attached figures

[0032] 1: Gas chamber through hole; 2: Gas pore through hole; 3: Internal channel; 4: Main channel; 5: Row channel; 6: Sub-channel; 7: CO2 laser; 8: Glass substrate; 9: Upper glass; 10: Lower glass; 11: Atomic gas chamber. Detailed Implementation

[0033] The embodiments of the present invention are described in detail below. The embodiments described below are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention.

[0034] The inventors discovered that the fabrication of all-glass atomic chambers often requires thicker substrates and more complex splicing, resulting in lower precision and making mass production difficult. Furthermore, for atomic chambers such as sapphire, the filling method involves a single chamber with an alkali metal source. This additional chamber complicates the fabrication process, and the resulting atomic chambers are not independent units.

[0035] Accordingly, in one aspect of the present invention, a method for preparing an all-glass atomic gas cell is provided, comprising the following steps:

[0036] (1) Provide a glass substrate, a first glass, and a second glass;

[0037] The glass substrate has a first surface, a second surface, and a side surface disposed opposite to each other;

[0038] Both the first glass and the second glass are polished glass;

[0039] (2) The glass substrate is processed using laser cutting and wet etching processes to form air chamber through holes, internal channels and air vents on the glass substrate.

[0040] The air chamber through hole penetrates the first surface and the second surface of the glass substrate. The air hole through hole is a groove formed on the side of the glass substrate. The internal channel connects the air chamber through hole and the air hole through hole.

[0041] (3) Polish the first surface and the second surface of the glass substrate;

[0042] (4) Bond the first glass and the second glass to the polished first surface and the second surface respectively, so that air chambers and air pore channels are formed together between the first glass, the glass substrate and the second glass;

[0043] (5) Connect the injection pipe to the air vent channel;

[0044] (6) Vacuum is drawn through the filling tube and alkali metal atoms are added so that the alkali metal atoms enter the gas chamber through the gas pore channel and the internal channel;

[0045] (7) The filling tube is sealed to form an all-glass atomic gas chamber.

[0046] The method of this invention forms gas chambers, internal channels, and gas pores on a glass substrate through laser cutting and wet etching. During the wet etching process, the etching solution reacts chemically with the glass to remove the damaged layer and oxide layer generated by laser cutting, thereby improving the smoothness of the gas pores, internal channels, and gas chambers. Polishing the first and second surfaces of the glass substrate further removes surface textures, improves the smoothness of the glass substrate, and allows for better bonding between the two surfaces and the first and second glass layers, enhancing the sealing effect between the gas chambers and gas pore channels. Connecting a filling tube to the gas pore channels serves as a channel for vacuuming and filling with alkali metal atoms, effectively reducing the entry of impurity gases and thus improving the purity of the alkali metal atoms. Furthermore, the vacuuming and filling processes do not require a glove box, reducing manufacturing costs. In addition, this method can also achieve the fabrication of three-dimensional irregularly shaped micro-atomic gas chambers and the mass production of all-glass atomic gas chambers, with simple operation.

[0047] In step (1), in some embodiments, the provided glass substrate comprises quartz glass or borosilicate glass. Therefore, the wet etching process can be carried out using strong alkali, reducing the process difficulty, and the quartz glass or borosilicate glass, after polishing, has a better sealing effect, resulting in a lower leakage rate in the gas chamber structure.

[0048] In some embodiments, the first glass and the second glass may each independently comprise quartz glass or borosilicate glass. Furthermore, the first glass, the glass substrate, and the second glass are made of materials with the same coefficient of thermal expansion. This makes it easier for the first glass, the glass substrate, and the second glass to form air chambers and pore channels through photoadhesive bonding, thereby improving the sealing effect of the air chambers and pores and reducing the leakage rate.

[0049] In step (1), the length, width, and thickness of the glass substrate, the first glass, and the second glass can be selected according to the number of all-glass atomic gas cells to be fabricated, so as to form gas channels, internal channels, and gas cells of appropriate size to facilitate the introduction and storage of alkali metal atoms. Optionally, the thickness of the glass substrate, the first glass, and the second glass are each independently 400 μm-2 mm. The lengths are each independently 500 μm-50 mm, and the widths are each independently 500 μm-50 mm.

[0050] In step (2), the glass substrate is processed using laser cutting to form gas chamber through-holes, internal channels, and vent through-holes. Wet etching is then used to etch the gas chamber through-holes, internal channels, and vent through-holes, improving their smoothness. It can be understood that laser cutting utilizes a focused, high-power-density laser beam to irradiate the workpiece, causing the irradiated material to ablate rapidly. Simultaneously, a coaxial airflow blows away the molten material, thereby achieving the cutting purpose.

[0051] Optionally, in the laser cutting, the power of the laser is controlled to be 200W-800W, the wavelength to be 450nm-600nm, and the pulse width to be 250fs-350fs.

[0052] In step (2), the vent holes serve as gas channels for filling alkali metal atoms and for the vacuuming process, and their shape is not particularly restricted. As some specific examples, the vent holes are square.

[0053] Optionally, the length of the pores is 300μm-600μm, such as 300μm, 400μm, 500μm, 600μm, etc., and the width of the pores is 300μm-600μm, such as 300μm, 400μm, 500μm, 600μm, etc. Thus, the aforementioned pore specifications can facilitate the smooth entry of alkali metal atoms into the internal channels.

[0054] In step (2), the internal channel serves as a gas channel for filling alkali metal atoms and for the vacuuming process, and its shape is not particularly restricted. As some specific examples, the internal channel is square in shape.

[0055] Optionally, the length, width, and height of the internal channel are each independently greater than 100 μm. Alkali metal atoms condensed on the inner wall of the internal channel may block the internal channel. However, controlling the specifications of the internal channel within the aforementioned range can facilitate the smooth flow of alkali metal atoms into the gas chamber through-hole, while simultaneously meeting the size requirements of the micro-sized atomic gas chamber.

[0056] Furthermore, the length of the internal channel is 100μm-250μm, such as 100μm, 150μm, 200μm, 250μm, etc., the width of the internal channel is 100μm-250μm, such as 100μm, 150μm, 200μm, 250μm, etc., and the height of the internal channel (in the direction perpendicular to the length of the internal channel) is 100μm-250μm, such as 100μm, 150μm, 200μm, 250μm, etc.

[0057] In step (2), the gas chamber through-hole serves as the space for subsequent storage of alkali metal atoms, and its shape is not particularly restricted. As some specific examples, the shape of the gas chamber through-hole can be square. Square gas chamber through-holes are conducive to achieving light transmission from multiple surfaces, and the regular structure makes it easy to integrate with the preceding and following systems.

[0058] Optionally, the length and width of the gas chamber through-hole are 200 μm-2 mm. Specifically, this invention can fabricate micro-sized atomic gas chambers, wherein the length and width of the gas chamber through-hole are 200 μm-600 μm.

[0059] Typically, there are damage layers and oxide layers near and on the sidewalls of vent holes, internal channels, and air chambers. Wet etching can remove the damage layers and oxide layers, thereby improving the smoothness of the vent holes and channels.

[0060] In some embodiments, the etching solution is an aqueous solution of an alkali with the chemical formula M(OH). x M represents alkali metal or alkaline earth metal, and X is 1 or 2.

[0061] Optionally, the alkaline aqueous solution is a KOH aqueous solution with a concentration of 5 mol / L-10 mol / L. Thus, under the action of the laser, the laser-cut portion of the glass substrate forms active centers. During the etching process of the glass substrate using KOH, it will undergo a selective etching reaction with the laser-processed material, resulting in the formation of a silicon-rich SiO₂ structure in the laser-processed glass material. x (x<2) to improve the smoothness of the laser-etched part.

[0062] In some embodiments, the temperature for wet etching is 60°C-90°C.

[0063] In some embodiments, the etching time is 40h-60h.

[0064] In some embodiments, the temperature for wet etching is 60°C-90°C.

[0065] In some embodiments, step (2) further includes: placing the wet-etched glass substrate into an annealing furnace at a temperature of 900℃-1200℃ for annealing for 18h-25h. This annealing process allows the surface that still has roughness after wet etching to be remelted and rearranged smoothly, thereby further improving the smoothness of the laser-etched portion.

[0066] In step (3), the first and second surfaces of the glass substrate obtained in step (2) are polished to remove the texture on the surface of the glass substrate, improve the smoothness of the glass substrate, and facilitate the subsequent bonding process.

[0067] Typically, polishing methods can be chemical polishing or physical polishing.

[0068] In step (4), the polished glass substrate, the first glass and the second glass are bonded to form air chambers and air pore channels.

[0069] In some embodiments, the bonding process is atomic adhesive bonding. Atomic adhesive bonding enables the first and second surfaces of the polished glass substrate to adhere tightly to the first and second glass surfaces via intermolecular forces. During atomic adhesive bonding, hydroxyl groups on the first and second surfaces of the glass substrate at their contact points with the first and second glass surfaces form hydrogen bonds and numerous dangling bonds in the contact areas. As the atomic adhesive bonding time progresses, the dangling bonds are reconfigured into silanol bonds, thus completing atomic-level bonding. This atomic adhesive bonding process is simple, inexpensive, and provides good sealing of gas chambers and pores after bonding. Optionally, the temperature for the atomic adhesive bonding process is 180℃-260℃.

[0070] In step (5), a filling tube is connected to the vent channel to facilitate subsequent filling of alkali metal atoms and vacuuming operations.

[0071] In some embodiments, a filling tube is connected to the pore channel using a hot-melt process. Optionally, the filling tube has an inner diameter of 0.5mm-1.5mm and an outer diameter of 1.5mm-2.2mm.

[0072] Optionally, the filling tube may include a glass tube.

[0073] In some embodiments, step (5) further includes baking the all-glass component connected to the filling tube.

[0074] In step (6), the gas chamber is evacuated and alkali metal atoms are added so that the alkali metal atoms enter the gas chamber through the gas pore channels and internal channels.

[0075] In some embodiments, the vacuum period of the gas chamber is maintained for 22-26 hours using the filling pipe. This increases the vacuum level of the gas chamber and reduces the entry of impurity gases.

[0076] In some embodiments, the process of injecting alkali metal atoms into the gas chamber utilizes the natural diffusion of alkali metal atoms, and the injection ends when a metallic solid condenses on the gas chamber wall.

[0077] In step (7), the filling tube is sealed to form an all-glass atomic gas chamber.

[0078] In some embodiments, the sealing method involves heating and melting the filling tube to seal the vent passage.

[0079] In some embodiments, the number of gas cell vias formed on the glass substrate is one, and the method is a method for preparing a single all-glass atomic gas cell. For example, as shown... Figure 1 As shown, the glass substrate has a gas chamber through hole 1, a gas hole through hole 2 and an internal channel 3, and the internal channel 3 is used to connect the gas hole through hole 2 and the gas chamber through hole 1.

[0080] Optionally, the number of air chamber through holes formed on the glass substrate is one, and the center points of the internal channel, the air chamber through hole and the air hole through hole are located on the same straight line. The center point of the internal channel is located at 400μm-600μm in the thickness direction of the glass substrate.

[0081] In other embodiments, the number of air chamber through holes formed on the glass substrate is multiple, and the internal channel includes multiple sub-channels and a main channel. One end of the main channel is connected to the air chamber through hole, one end of each of the multiple sub-channels is connected to the multiple air chamber through holes in a corresponding manner, and the other end is connected in parallel with the main channel.

[0082] In some other embodiments, reference is made to Figure 2 Multiple air chambers 1 are formed in an array on a glass substrate, arranged in n rows and m columns, where n and m are integers greater than 1. The internal channels include one main channel 4, n row channels 5, and n×m sub-channels 6. The main channel 4 is connected to the n row channels 5 in parallel, and each row channel 5 is connected to the m sub-channels 6. The m sub-channels 6 are connected one-to-one with the m air chambers 1. This allows for the mass production of all-glass atomic air chambers.

[0083] Understandably, n and m relate to the number of all-glass atomic gas cells produced in a batch, and their values ​​can be the same or different.

[0084] Optionally, n is an integer from 2 to 15, such as 2, 5, 8, 10, 15, etc.

[0085] Optionally, m is an integer from 2 to 20, such as 2, 5, 8, 10, 15, etc.

[0086] In some embodiments, reference Figure 3 The process also includes step (8), which involves heating and sealing each subchannel 6 to obtain a sealed all-glass atomic gas chamber. Optionally, the sealing method involves using a CO2 laser 7 to locally heat each subchannel 6 to complete the sealing.

[0087] In some embodiments, step (8) further includes cutting the array of atomic gas cells using glass cutting technology to separate the array of atomic gas cells and form a single all-glass atomic gas cell, thereby completing the mass production of all-glass atomic gas cells.

[0088] In the process of mass-producing all-glass atomic gas chambers, on the one hand, the process is faster due to the high speed of carbon dioxide laser processing, which reduces the time required for mass production of atomic gas chambers and simplifies the operation, thus greatly improving production efficiency; on the other hand, the consistency between individual all-glass gas chambers formed by glass cutting technology is better.

[0089] In another aspect of the invention, the invention proposes an all-glass atomic gas chamber prepared by the above method.

[0090] As an example, see reference Figure 4 The all-glass atomic gas chamber includes a glass substrate 8, an upper glass layer 9, a lower glass layer 10, and an atomic gas chamber 11 formed by the three. The all-glass atomic gas chamber can achieve six-sided light transmission and the effect of complete light transmission on the two polished sides, which can meet the requirements of atomic devices for atomic gas chambers.

[0091] The present invention will be described below through specific embodiments. It should be noted that the following embodiments are only for illustrating the present invention and should not be regarded as limiting the scope of the present invention.

[0092] Example 1

[0093] Using quartz glass (4mm × 4mm × 1mm) as the substrate, a femtosecond laser with a wavelength of 515nm, a pulse width of 300fs, and a frequency of 200kHz was used to sequentially scan along the edge of one surface of the quartz glass to create: 400μm × 400μm air pores, 200μm × 200μm × 200μm internal channels, and 00μm × 500μm air chambers. The center point of the internal channels was located at 500μm along the thickness direction of the quartz glass. The laser-cut quartz glass was then immersed in an 8mol / L KOH aqueous solution and etched at 80℃ for 48 hours. Finally, the wet-etched quartz glass was annealed at 1000℃ for 20 hours.

[0094] The two surfaces of the quartz glass after the above processing are polished. After polishing, the thickness of the glass substrate is naturally reduced to 500μm. Then, two pieces of polished glass (4mm×4mm×1mm) are respectively laminated onto the two surfaces of the quartz glass. The three layers of glass are bonded by photopolymer atomic bonding, and the bonding process temperature is controlled at 200℃ to form air cells and air pore channels.

[0095] A glass tube with an inner diameter of 1 mm and an outer diameter of 2 mm is connected to the air vent channel by heat fusion.

[0096] After baking the glass component with the glass tube, a vacuum is drawn from the glass tube through the pore channel and internal channel to the gas chamber for 24 hours. Then, the Cs atom gas is allowed to diffuse naturally through the gas filling pore channel and the external Cs atom metal source until a metallic solid condenses on the gas chamber wall, at which point the addition of Cs atoms is stopped.

[0097] Finally, the glass tube is heated and fused, and the internal channel is sealed by CO2 laser heating to form a single all-glass atomic gas chamber. This all-glass atomic gas chamber has the properties of being smooth and transparent on all four sides, being entirely made of glass, and having no absorption of radio signals.

[0098] Example 2

[0099] Using quartz glass (30mm×30mm×1mm) as the glass substrate, a femtosecond laser with a wavelength of 515nm, a pulse width of 300fs, and a frequency of 200kHz is used to sequentially scan a 10×10 array of 500μm×500μm air cell through-holes along the edge of one surface of the quartz glass. The spacing between rows is controlled to be 2mm, and the spacing between each row of air cell through-holes is 2mm.

[0100] Continue to use laser to scan the quartz glass to create a 10×10 array of sub-channels, 10 row channels, 1 main channel, and air vents. Make each row of 10 sub-channels correspond one-to-one with each row of 10 air chamber through holes. Each row channel is connected to 10 sub-channels, the main channel is connected to 10 row channels, and the air vent through holes are connected to the main channel.

[0101] The laser-cut quartz glass was then placed in an 8 mol / L KOH solution and etched at 80°C for 48 hours. The wet-etched quartz glass was then annealed at 1000°C for 20 hours.

[0102] The two surfaces of the quartz glass after the above processing are polished. Then, two pieces of polished glass (30mm×30mm×1mm) are respectively laminated onto the two surfaces of the quartz glass. The three layers of glass are bonded together using atomic adhesive bonding. The bonding process temperature is controlled at 200℃ to form air cells and air pore channels.

[0103] A glass tube with an inner diameter of 1 mm and an outer diameter of 2 mm is connected to the air vent channel by heat fusion.

[0104] The component obtained after the glass tube is filled is baked, and the internal channel and gas chamber are evacuated using the venting channel for 24 hours. Then, the Rb atom gas diffuses naturally through the venting channel and the external Rb atom metal source until a metallic solid condenses on the gas chamber wall, at which point the Rb atom filling is stopped.

[0105] The glass tube is heated and melted, and CO2 local laser heating is used to seal the sub-channels, row channels, and main channel.

[0106] Finally, 100 discrete, individual all-glass atomic gas chambers were cut out using glass cutting technology.

[0107] The all-glass atomic gas chamber formed by this method exhibits excellent airtightness, with a helium leakage rate of 1.5 × 10⁻⁶ measured using a side-leakage meter. -13 Pa·m 3 The measured value is / s, which is far below the limit value of the side-leakage instrument, meeting the working requirements of the all-glass atomic gas cell. Furthermore, each all-glass gas cell is small in size, easy to optically integrate, has smooth, four-sided light transmission, and is a single piece of glass, exhibiting no absorption of radio signals. In addition, the process of batch-producing 100 all-glass atomic gas cells is relatively fast, requiring only 5-10 minutes for batch production. This simplifies the operation, greatly increasing production efficiency, and the consistency among the 100 batch-produced all-glass gas cells is excellent.

[0108] In the description of this specification, references to terms such as "one embodiment," "another embodiment," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment is included in at least one embodiment of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in a suitable manner in any one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of those different embodiments or examples.

[0109] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. A method for preparing an all-glass atomic gas cell, characterized in that, Includes the following steps: (1) Provide a glass substrate, a first glass, and a second glass. The glass substrate has a first surface, a second surface, and a side surface disposed opposite to each other. Both the first glass and the second glass are polished glass; (2) The glass substrate is processed using laser cutting and wet etching processes to form air chamber through holes, internal channels and air vents on the glass substrate. The number of air chamber through holes formed on the glass substrate is one. The wet-etched glass substrate is placed in an annealing furnace at a temperature of 900℃-1200℃ for annealing for 18h-25h. The air chamber through hole penetrates the first surface and the second surface of the glass substrate. The air hole through hole is a groove formed on the side of the glass substrate. The internal channel connects the air chamber through hole and the air hole through hole. The center points of the internal channel, the air chamber through hole and the air hole through hole are located on the same straight line. (3) Polish the first surface and the second surface of the glass substrate; (4) Bond the first glass and the second glass to the polished first surface and the second surface respectively, so that the first glass, the glass substrate and the second glass together form an air cell and an air pore channel, wherein the bonding is an atomic glue bonding process and the temperature of the atomic glue bonding process is 180℃-260℃; (5) Connect the filling pipe to the air vent channel; (6) Vacuum is drawn through the filling tube and alkali metal atoms are added so that the alkali metal atoms enter the gas chamber through the gas pore channel and the internal channel; (7) The filling tube is sealed to form an all-glass atomic gas chamber.

2. The method according to claim 1, characterized in that, The glass substrate, the first glass, and the second glass each independently comprise quartz glass or borosilicate glass.

3. The method according to claim 1, characterized in that, The thicknesses of the glass substrate, the first glass, and the second glass are each independently 400 μm-2 mm.

4. The method according to claim 1, characterized in that, The length of the vent hole is 300μm-600μm, and the width of the vent hole is 300μm-600μm; And / or, the length of the air chamber through hole is 200μm-2mm, and the width of the air chamber through hole is 200μm-2mm.

5. The method according to claim 1, characterized in that, The wet etching process satisfies at least one of the following conditions: The etching solution is an aqueous solution of an alkali, and the chemical formula of the alkali is M(OH). X M represents alkali metal or alkaline earth metal, and X is 1 or 2; The temperature ranges from 60℃ to 90℃.

6. The method according to claim 5, characterized in that, The aqueous solution of the alkali is a KOH aqueous solution with a concentration of 5 mol / L to 10 mol / L.

7. An all-glass atomic gas cell prepared by the method according to any one of claims 1-6.

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