Evaporation mask, evaporation device and evaporation method

Abstract

The present disclosure provides an evaporation mask plate, an evaporation device and an evaporation method, and belongs to the technical field of evaporation. The evaporation mask plate comprises a mask plate body and a plurality of evaporation through holes penetrating through the mask plate body. The plurality of evaporation through holes correspond one-to-one to a plurality of sub-pixel regions arranged at intervals on a to-be-evaporated substrate, so as to form a plurality of sub-pixels of different colors by an evaporation source evaporating the plurality of sub-pixel regions. Since the aperture of the opening on the side close to the to-be-evaporated substrate of each evaporation through hole is smaller than the aperture of the opening on the side away from the to-be-evaporated substrate, and each evaporation through hole can extend to at least one sub-pixel region adjacent to the sub-pixel region formed by the evaporation through hole, the evaporation through hole can be flexibly set by adjusting the through hole included angle, and the evaporation angle of the evaporation source is adjusted, so that the plurality of evaporation sources can reliably evaporate different materials on the to-be-evaporated substrate, and the different materials evaporated can be reliably co-doped, and the evaporation effect is better.

Description

Technical Field

[0001] This disclosure relates to the field of vapor deposition technology, and in particular to a vapor deposition mask, vapor deposition apparatus and vapor deposition method. Background Technology

[0002] In the fabrication process of organic light emitting diode (OLED) display panels, a vapor deposition device combined with a vapor deposition process is often used to deposit the required functional film layer on the substrate to be vapor deposited.

[0003] A typical vapor deposition apparatus includes a vapor deposition source and a vapor deposition mask. The vapor deposition mask has a vapor deposition through-hole perpendicular to the substrate to be vaporized. The vapor deposition source is used to vaporize material onto the substrate through the vapor deposition through-hole to form the desired functional film layer. Furthermore, for functional films that require doping with different materials, the vapor deposition apparatus generally includes multiple vapor deposition sources capable of vaporizing different materials. These multiple vapor deposition sources are used to jointly vaporize different materials onto the substrate through the same vapor deposition through-hole.

[0004] However, due to the spacing between each pair of adjacent vapor deposition sources and the spacing between the vapor deposition source and the vapor deposition mask, different materials cannot be reliably doped, resulting in poor vapor deposition effect. Summary of the Invention

[0005] A vapor deposition mask, vapor deposition apparatus, and vapor deposition method are provided, which can solve the problem of poor vapor deposition effect in related technologies. The technical solution is as follows:

[0006] On one hand, a vapor deposition mask is provided, the vapor deposition mask being disposed on one side of a substrate to be vapor-deposited, and the substrate to be vapor-deposited having a plurality of sub-pixel regions arranged at intervals; the vapor deposition mask includes:

[0007] Mask plate body;

[0008] Multiple evaporation through holes penetrating the mask plate body, each of the multiple evaporation through holes corresponding one-to-one with the multiple sub-pixel areas, so that the evaporation source can evaporate in the multiple sub-pixel areas to form multiple sub-pixels of different colors;

[0009] In this configuration, the aperture of the opening on the side of the vapor deposition via closest to the substrate to be vaporized is smaller than the aperture of the opening on the side furthest from the substrate to be vaporized. The opening of each vapor deposition via on the side furthest from the substrate to be vaporized extends to at least one adjacent sub-pixel region. Furthermore, the color of the vapor-deposited sub-pixel in the sub-pixel region corresponding to each vapor deposition via is different from the color of the vapor-deposited sub-pixel in the at least one adjacent sub-pixel region.

[0010] Optionally, the array of multiple sub-pixel regions is arranged such that the multiple sub-pixels formed by vapor deposition in the multiple sub-pixel regions include: multiple sub-pixels of three colors, and in the row direction, each sub-pixel is arranged in the order of three different colors of sub-pixels; the opening of each vapor deposition via on the side away from the substrate to be vapor deposited extends to two adjacent sub-pixel regions.

[0011] Optionally, the spacing between the openings on the side of each pair of adjacent vapor-deposited vias away from the substrate to be vapor-deposited is greater than the spacing between two sub-pixels formed in the two sub-pixel regions corresponding to each pair of adjacent vapor-deposited vias.

[0012] Optionally, in a direction parallel to the substrate to be vapor-deposited, each vapor-deposited via has two opposing via angles.

[0013] Each vapor deposition through-hole has two through-hole angles that are not equal, and in each vapor deposition through-hole, the through-hole angle in the upstream direction of the vapor deposition source is smaller than the through-hole angle in the upstream direction of the vapor deposition source.

[0014] Optionally, in each vapor-deposited through-hole, one of the two through-hole angles is a right angle and the other is an acute angle.

[0015] Alternatively, in each vapor-deposited through-hole, the included angle between the two through-holes is an acute angle.

[0016] Optionally, in each vapor-deposited through-hole, the smallest through-hole angle is greater than or equal to the arctangent of the ratio of the thickness of the mask body to the first aperture, and less than or equal to the arctangent of the ratio of the thickness of the mask body to the second aperture.

[0017] Furthermore, the first aperture is the aperture of the opening on the side of the evaporation through-hole away from the substrate to be evaporated when the opening extends to an adjacent sub-pixel area; the second aperture is the aperture of the opening on the side of the evaporation through-hole away from the substrate to be evaporated when the opening extends to each adjacent sub-pixel area.

[0018] Optionally, the cross-section of the vapor-deposited through-hole is funnel-shaped along a direction perpendicular to the substrate to be vapor-deposited.

[0019] Optionally, the vapor-deposited vias include a plurality of sub-vias spaced apart along a direction parallel to the substrate to be vapor-deposited;

[0020] The openings of the plurality of sub-through holes near the substrate to be vapor-deposited overlap each other, and the openings of each pair of adjacent sub-through holes away from the substrate to be vapor-deposited are separated by the mask plate body.

[0021] Optionally, in the plurality of sub-vias, each sub-via has two opposing via angles in a direction parallel to the substrate to be vapor-deposited, and the two via angles of each sub-via are equal, while the via angles of each sub-via are not equal.

[0022] Optionally, the vapor-deposited through-hole includes two sub-through-holes;

[0023] Furthermore, in the two sub-through holes, the included angle between the two holes in one sub-through hole is an acute angle, and the included angle between the two holes in the other sub-through hole is a right angle;

[0024] Alternatively, in the two sub-through holes, the included angle between the two through holes in each sub-through hole is an acute angle.

[0025] Optionally, the orthographic projection of the opening of the vapor deposition through-hole on the side closer to the substrate to be vapor deposition on the substrate is circular, elliptical, or rectangular; the orthographic projection of the opening of the vapor deposition through-hole on the side farther from the substrate to be vapor deposition on the substrate is elliptical or rectangular.

[0026] Optionally, the ratio of the thickness of the mask plate body to the aperture of the opening on the side of the vapor deposition through-hole away from the substrate to be vapor-deposited is greater than or equal to 2.

[0027] Optionally, the mask body includes a frame portion and an opening portion, wherein the frame portion is used to define the opening portion, and the opening portion is used to form the plurality of vapor deposition through holes;

[0028] Wherein, the included angle of the vapor-deposited through-hole is smaller than the included angle between the frame portion and the substrate to be vapor-deposited.

[0029] Optionally, the material of the frame portion includes monocrystalline silicon, and the material of the opening portion includes at least one of monocrystalline silicon, silicon oxide, and silicon nitride.

[0030] On the other hand, a vapor deposition apparatus is provided, the vapor deposition apparatus comprising: a plurality of vapor deposition sources, and a vapor deposition mask as described above;

[0031] The plurality of evaporation sources are located on the side of the evaporation mask away from the substrate to be evaporated in the display panel, and the plurality of evaporation sources are arranged at intervals along a direction parallel to the substrate to be evaporated.

[0032] In this process, the nozzle of each vapor deposition source faces the vapor deposition mask, and each vapor deposition source is used to deposit material into the sub-pixel area of ​​the substrate to be vapor deposited through the vapor deposition through-hole of the vapor deposition mask to form a sub-pixel. The materials vaporized by each vapor deposition source are different.

[0033] Furthermore, each vapor deposition source nozzle forms a vapor deposition angle with the substrate to be vapor deposited, and the difference between the vapor deposition angle and the through-hole angle of the vapor deposition through-hole is less than a difference threshold.

[0034] Optionally, the vapor deposition apparatus includes: two vapor deposition sources; and in a direction parallel to the substrate to be vapor-deposited, the vapor deposition vias have two opposing via angles.

[0035] Furthermore, the evaporation angle of each evaporation source is equal to the evaporation angle of the two through holes in the evaporation through hole, with the adjacent through hole angle being equal.

[0036] Optionally, the spacing between any two adjacent vapor deposition sources is negatively correlated with the first parameter and positively correlated with the second parameter;

[0037] Wherein, the first parameter is the thickness of the mask body in the vapor deposition mask; the second parameter is the product of the first sub-parameter and the second sub-parameter;

[0038] The first sub-parameter is the distance between the intersection of the nozzle extension line of one of the two adjacent vapor deposition sources and the side of the vapor deposition through-hole away from the substrate to be vaporized, and the intersection of the nozzle extension line of the other vapor deposition source and the side of the vapor deposition through-hole away from the substrate to be vaporized. The second sub-parameter is the sum of the first parameter and the vertical distance between the plurality of vapor deposition sources and the vapor deposition mask.

[0039] Optionally, the spacing b between any two adjacent vapor deposition sources satisfies: b = a(d + Ts) / d;

[0040] Wherein, d is the first parameter, a is the first sub-parameter, and Ts is the vertical distance between the plurality of vapor deposition sources and the vapor deposition mask.

[0041] Optionally, the cross-section of the vapor-deposited through-hole is funnel-shaped along a direction perpendicular to the substrate to be vapor-deposited;

[0042] The spacing between any two adjacent vapor deposition sources is negatively correlated with the smallest of the two aperture angles of the vapor deposition via.

[0043] In another aspect, a vapor deposition method is provided, the vapor deposition method comprising:

[0044] Provide the substrate to be vapor-deposited;

[0045] Using the vapor deposition apparatus described above, material is vapor deposited on the substrate to be vapor deposited to form a plurality of sub-pixels.

[0046] In summary, the beneficial effects of the technical solutions provided by the embodiments of this disclosure can at least include:

[0047] A vapor deposition mask, a vapor deposition apparatus, and a vapor deposition method are provided. The vapor deposition mask includes a mask body and a plurality of vapor deposition through-holes penetrating the mask body. Each of the plurality of vapor deposition through-holes corresponds one-to-one with a plurality of spaced sub-pixel regions on a substrate to be vapor-deposited, allowing vapor deposition sources to vapor-deposit into multiple sub-pixels of different colors in these sub-pixel regions. Because the aperture of the opening of each vapor deposition through-hole near the substrate is smaller than the aperture of the opening away from the substrate, and because it can extend to at least one adjacent sub-pixel region with different colors, the included angle of the vapor deposition through-holes can be flexibly set, and the vapor deposition angle of the vapor deposition source can be adjusted, enabling multiple vapor deposition sources to reliably vapor-deposit different materials onto the substrate, and the different vapor-deposited materials can be reliably co-doped, resulting in a better vapor deposition effect. Attached Figure Description

[0048] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0049] Figure 1 This is a schematic diagram of the structure of a vapor deposition apparatus provided in an embodiment of this disclosure;

[0050] Figure 2 This is a schematic diagram of the structure of a vapor deposition mask provided in an embodiment of this disclosure;

[0051] Figure 3 This is a schematic diagram of another vapor deposition mask provided in an embodiment of this disclosure;

[0052] Figure 4 yes Figure 3 The equivalent structure diagram of the vapor deposition mask in the structure shown;

[0053] Figure 5 yes Figure 3 Equivalent cross-sectional view of the vapor deposition mask in the structure shown;

[0054] Figure 6 yes Figure 3 The top view equivalent of the vapor deposition mask in the structure shown;

[0055] Figure 7 yes Figure 3 The equivalent bottom view of the vapor deposition mask in the structure shown;

[0056] Figure 8 This is a schematic diagram of the structure of another vapor deposition mask provided in the embodiments of this disclosure;

[0057] Figure 9 yes Figure 8 The equivalent structure diagram of the vapor deposition mask in the structure shown;

[0058] Figure 10 yes Figure 8 Equivalent cross-sectional view of the vapor deposition mask in the structure shown;

[0059] Figure 11 yes Figure 8 The top view equivalent of the vapor deposition mask in the structure shown;

[0060] Figure 12 yes Figure 8 The equivalent bottom view of the vapor deposition mask in the structure shown;

[0061] Figure 13 This is a schematic diagram of another vapor deposition mask provided in an embodiment of the present disclosure;

[0062] Figure 14 yes Figure 13 The equivalent structure diagram of the vapor deposition mask in the structure shown;

[0063] Figure 15 yes Figure 13 Equivalent cross-sectional view of the vapor deposition mask in the structure shown;

[0064] Figure 16 yes Figure 13 The top view equivalent of the vapor deposition mask in the structure shown;

[0065] Figure 17 yes Figure 13 The equivalent bottom view of the vapor deposition mask in the structure shown;

[0066] Figure 18 This is a schematic diagram of another vapor deposition mask provided in an embodiment of the present disclosure;

[0067] Figure 19 yes Figure 18 The equivalent structure diagram of the vapor deposition mask in the structure shown;

[0068] Figure 20 yes Figure 18 Equivalent cross-sectional view of the vapor deposition mask in the structure shown;

[0069] Figure 21 yes Figure 18 The top view equivalent of the vapor deposition mask in the structure shown;

[0070] Figure 22 yes Figure 18 The equivalent bottom view of the vapor deposition mask in the structure shown;

[0071] Figure 23 This is a schematic diagram of another vapor deposition mask provided in an embodiment of the present disclosure;

[0072] Figure 24 This is a schematic diagram of the structure of a vapor deposition apparatus provided in an embodiment of this disclosure;

[0073] Figure 25 This is a schematic diagram of another vapor deposition apparatus provided in an embodiment of this disclosure;

[0074] Figure 26 This is a schematic diagram of another vapor deposition apparatus provided in the embodiments of this disclosure;

[0075] Figure 27 This is a schematic diagram of another vapor deposition apparatus provided in an embodiment of this disclosure;

[0076] Figure 28 This is a schematic diagram of a display panel including a pixel delimiting layer according to an embodiment of the present disclosure;

[0077] Figure 29 This is a schematic diagram of a vapor deposition apparatus that uses a pixel defining layer as a vapor deposition mask, according to an embodiment of this disclosure.

[0078] Figure 30 This is a flowchart of a vapor deposition method provided in an embodiment of this disclosure. Detailed Implementation

[0079] To make the objectives, technical solutions, and advantages of this disclosure clearer, the embodiments of this disclosure will be described in further detail below with reference to the accompanying drawings.

[0080] Currently, most functional films in OLED display panels require co-doping, meaning different materials need to be doped to form a specific functional film. Correspondingly, the film fabrication process requires multiple evaporation sources capable of depositing different materials, working together (i.e., co-evaporation). For example, common co-doped films include the light-emitting layer of pixels in display panels. Furthermore, the different doped materials can be categorized into main materials and dopant materials, with the main material accounting for a larger proportion than the dopant materials. Correspondingly, the multiple evaporation sources can be divided into at least one main evaporation source (i.e., master source) and at least one dopant evaporation source (i.e., dopant source). The master source is used to deposit the main material, and the dopant source is used to deposit the dopant material.

[0081] For example, Figure 1The vapor deposition apparatus shown includes one main source and one doping source. Each vapor deposition source may have a vapor deposition crucible and a nozzle. The vapor deposition crucible may be pre-filled with the material to be vaporized. Then, the vapor deposition source vaporizes the material filled in the vapor deposition crucible through the nozzle in a certain direction, which is the same as the direction of the nozzle and can also be called the vapor deposition direction. In addition, multiple vapor deposition sources may be located in the same vapor deposition chamber and move back and forth along a direction parallel to the moving direction of the substrate to be vaporized, so as to form functional films at different locations on the substrate.

[0082] However, because the current vapor deposition masks all have vapor deposition through holes... Figure 1 The straight holes shown are evaporation through-holes perpendicular to the substrate to be evaporated, with a vertical internal orientation. This means that adjacent evaporation sources cannot approach each other infinitely, and the spacing between adjacent evaporation through-holes is small. However, the diameter of each evaporation through-hole is larger than this spacing. Therefore, multiple evaporation sources evaporating through the same evaporation through-hole result in material variations such as… Figure 1 The delamination phenomenon shown prevents reliable co-doping of materials, meaning that multiple sources (referring to the evaporation source in this case) cannot be doped. Consequently, the formed functional film layer fails, leading to a decline in the performance of devices containing this functional film layer. The spacing between any two adjacent evaporation vias is typically approximately 4 micrometers (μm), such as 4.6 μm or 4.76 μm. The diameter of each evaporation via is typically approximately 7 μm, such as 7.14 μm or 7.22 μm. These problems are more likely to occur in scenarios involving high pixel density and small device distances. Here, device distance refers to the perpendicular distance between the evaporation source and the evaporation mask, also known as the minimum distance.

[0083] This disclosure provides a novel vapor deposition mask that can reliably achieve multi-source doping, prepare functional films of co-doped materials, and ensure good device performance.

[0084] Figure 2 This is a schematic diagram of the structure of a vapor deposition mask provided in an embodiment of this disclosure. Figure 2 As shown, the evaporation mask 00 can be disposed on one side of the substrate 10 to be evaporated, and the substrate 10 to be evaporated can have a plurality of sub-pixel regions A1 arranged at intervals. The evaporation mask 00 includes:

[0085] Mask plate body 01.

[0086] Furthermore, multiple evaporation through-holes 01K (only one evaporation through-hole 01K is schematically shown in the figure) penetrate the mask body 01. These multiple evaporation through-holes 01K correspond one-to-one with multiple sub-pixel regions A1, allowing the evaporation source to evaporate material in the multiple sub-pixel regions A1 to form multiple sub-pixels P1 of different colors. That is, the evaporation source can evaporate material in a corresponding sub-pixel region A1 on the substrate 10 to be evaporated through each evaporation through-hole 01K to form one sub-pixel P1, and evaporate material in different sub-pixel regions A1 through different evaporation through-holes 01K to form multiple sub-pixel P1. Because the multiple sub-pixel regions A1 are arranged at intervals, the multiple evaporation through-holes 01K corresponding one-to-one with the multiple sub-pixel regions A1 are also spaced apart from each other, and the multiple sub-pixels P1 formed are also spaced apart from each other.

[0087] Among them, each vapor deposition through-hole 01K has an opening near the side of the substrate 10 to be vapor deposited (i.e., Figure 2 The aperture of the upper opening shown is smaller than the opening on the side furthest from the substrate 10 to be vapor-deposited (i.e., Figure 2 The aperture of the lower opening is shown. Thus, it can be seen that at least one inner wall of each vapor deposition via 01K can intersect with, but not perpendicular to, the substrate 10 to be vapor-deposited; that is, the vapor deposition via 01K is not a straight hole, but an oblique hole. The vapor deposition source is generally located on the side of the mask body 01 away from the substrate 10 to be vapor-deposited. Therefore, the upper opening can also be considered as the opening away from the vapor deposition source, and the lower opening can be considered as the opening closer to the vapor deposition source. The material vaporized by the vapor deposition source enters the vapor deposition via 01K through the lower opening and is then formed in the sub-pixel region A1 of the substrate 10 to be vapor-deposited through the upper opening.

[0088] Furthermore, the opening of each vapor deposition via 01K on the side away from the substrate 10 to be vaporized can extend to at least one adjacent sub-pixel region A1, that is, the orthographic projection of each vapor deposition via 01K on the substrate 10 to be vaporized can overlap with at least one adjacent sub-pixel region A1. Also, the color of the sub-pixel P1 vaporized in the sub-pixel region A1 corresponding to each vapor deposition via 01K is different from the color of the sub-pixel P1 vaporized in the at least one adjacent sub-pixel region A1.

[0089] Thus, the nozzle orientation of the evaporation source when evaporating material can be flexibly set based on the through-hole angle (also known as the mask tilt angle) of the evaporation through-hole 01K. This allows for flexible control of the evaporation angle, ensuring that when forming a sub-pixel P1 of any color, the evaporation source can reliably evaporate material through the evaporation through-hole 01K into the corresponding sub-pixel area A1, forming sub-pixel P1 without affecting the formation of other color sub-pixels P1. Furthermore, in application scenarios where multiple evaporation sources evaporate different materials through each evaporation through-hole 01K to co-dopate a certain film layer (e.g., a light-emitting layer) in sub-pixels P1, the evaporation through-hole 01K can be configured to meet the requirements. Figure 2The shape shown can also be flexibly adjusted by setting the through-hole angle and coordinating with adjusting the evaporation angle of the evaporation source, so that different materials evaporated by multiple evaporation sources can be reliably doped on the substrate 10 to be evaporated, avoiding material delamination. The through-hole angle of the evaporation through-hole 01K here can refer to the two angles (marked as θ1 and θ2 in the figure) that the evaporation through-hole 01K has in the direction X1 parallel to the substrate 10 to be evaporated. These are the angles formed between the two inner walls of the evaporation through-hole 01K and the substrate 10 to be evaporated in the direction parallel to the substrate 10.

[0090] It should be noted that, in combination Figure 2 The ratio of the thickness d of the mask body 01 to the aperture r0 of the opening on the side of each vapor deposition via 01K away from the substrate 10 to be vapor deposited can be relatively large, meaning the mask body 01 can be relatively thick, while the aperture of the opening on the side of the vapor deposition via 01K away from the substrate 10 to be vapor deposited can be relatively small. In this application scenario, if the vapor deposition via 01K is set to... Figure 1 The straight holes shown make it difficult to achieve material co-doping, while if vapor deposition through-holes (01K) are set... Figure 2 The non-straight holes shown can reliably achieve material co-doping by flexibly setting the included angle of the through holes, unaffected by the relatively thick mask body 01 and the small diameter of the lower opening. The thickness direction can be X2, perpendicular to the substrate 10 to be vaporized.

[0091] Optionally, a single patterning process can be used to form a pattern with... Figure 2 The vapor deposition mask 00 is shown for vapor deposition of through-hole 01K. The patterning process can include sequential steps such as coating, exposure, development, and etching. The substrate 10 to be vapor deposited can be a glass substrate or a flexible substrate, also referred to as the fabrication substrate.

[0092] In summary, this disclosure provides a vapor deposition mask. The vapor deposition mask includes a mask body and a plurality of vapor deposition through-holes penetrating the mask body. Each of the plurality of vapor deposition through-holes corresponds one-to-one with a plurality of spaced sub-pixel regions on the substrate to be vapor-deposited, allowing vapor deposition sources to vapor-deposit into multiple sub-pixels of different colors in these regions. Because the aperture of the opening of each vapor deposition through-hole near the substrate is smaller than the aperture of the opening away from the substrate, and because it can extend to at least one adjacent sub-pixel region with different sub-pixel colors, the included angle of the vapor deposition through-holes can be flexibly set, and the vapor deposition angle of the vapor deposition source can be adjusted, enabling multiple vapor deposition sources to reliably vapor-deposit different materials onto the substrate, and the different vapor-deposited materials can be reliably co-doped, resulting in a better vapor deposition effect.

[0093] Optional, combined Figure 2In this embodiment of the disclosure, the ratio of the thickness d of the mask body 01 to the aperture r0 of the opening on the side of the vapor deposition via 01K away from the substrate 10 to be vapor deposited can be greater than or equal to 2. For example, the thickness d of the mask body 01 can be 20 micrometers (μm), and the aperture r0 of the opening can be 4 μm.

[0094] Optionally, the multiple sub-pixel regions A1 of the substrate 10 to be vapor-deposited can be arranged in an array, that is, in a row and column arrangement, having multiple rows and columns of sub-pixel regions A1. Correspondingly, the multiple sub-pixels P1 formed in the multiple sub-pixel regions A1 can also be arranged in a row and column arrangement, including multiple rows and columns of sub-pixels P1.

[0095] For example, the multiple sub-pixels P1 formed by vapor deposition in multiple sub-pixel regions A1 may include multiple sub-pixels P1 of three colors. Furthermore, in the row direction X1 (the same direction as parallel to the substrate 10 to be vapor-deposited), each sub-pixel P1 can be arranged sequentially in the order of three sub-pixels of different colors. The opening of each vapor deposition via O1K on the side away from the substrate 10 to be vapor-deposited can extend to the two adjacent sub-pixel regions A1. That is, while ensuring that the colors are different, it extends to all adjacent sub-pixel regions A1.

[0096] For example, refer to Figure 3 The three colors shown are red (R), green (G), and blue (B). In the row direction X1, the sub-pixels P1 formed in the same row can be arranged in the order of one red sub-pixel P1-R, one green sub-pixel P1-G, and one blue sub-pixel P1-B. Of course, the positions of red, green, and blue can also be interchanged. The opening of the vapor-deposited via 01K corresponding to the sub-pixel area A1 where the green sub-pixel P1-G is located, away from the substrate 10 to be vapor-deposited, can extend to two adjacent sub-pixel areas A1, and the sub-pixels P1 formed in these two sub-pixel areas A1 are the red sub-pixel P1-R and the blue sub-pixel P1-B, respectively. Other vapor-deposited vias 01K are similar and will not be described further.

[0097] Of course, in some other embodiments, for Figure 3 In the scenario of the three colors of sub-pixels P1 shown, the opening of each vapor deposition via 01K on the side away from the substrate 10 to be vaporized can extend only to one adjacent sub-pixel area A1. That is, the opening of each vapor deposition via 01K on the side away from the substrate 10 to be vaporized extends at least to one adjacent sub-pixel area A1 and at most to two adjacent sub-pixel areas A1, to ensure that it does not extend to the sub-pixel area A1 with the same color as the formed sub-pixel, thereby avoiding affecting the vapor deposition effect.

[0098] Furthermore, in some other embodiments, the multiple sub-pixels P1 formed by vapor deposition in multiple sub-pixel regions A1 may also include multiple sub-pixels P1 of other colors, such as red (R), green (G), blue (B), and white (W). In the row direction X1, if each sub-pixel P1 is arranged sequentially in the order of one red sub-pixel P1-R, one green sub-pixel P1-G, one blue sub-pixel P1-B, and one white sub-pixel, then the opening of each vapor deposition via 01K on the side away from the substrate 10 to be vapor deposited can extend to at least one adjacent sub-pixel region A1, or two sub-pixel regions A1, or at most three sub-pixel regions A1.

[0099] Optional, combined Figure 3 In this embodiment, the spacing between the openings of any two adjacent vapor deposition vias 01K on the side furthest from the substrate 10 to be vapor-deposited can be greater than the spacing between two sub-pixels P1 formed in the two sub-pixel regions A1 corresponding to each pair of adjacent vapor deposition vias 01K. This further ensures that the vapor deposition source reliably vapor-deposits material in the corresponding sub-pixel region A1 through each vapor deposition via 01K, and avoids material delamination when vapor-depositing different materials, thus ensuring reliable co-doping of different vapor-deposited materials.

[0100] Optionally, as described in the above embodiments, in the direction parallel to the substrate 10 to be vapor-deposited, each vapor-deposited via 01K may have two opposing via angles. Figure 2 and Figure 3 They are labeled θ1 and θ2 respectively.

[0101] In this case, the included angles θ1 and θ2 between the two through-holes in each vapor-deposited through-hole 01K can be unequal. Furthermore, combined with... Figure 1 In each vapor-deposited via 01K, the included angles θ1 and θ2 of the two vias are such that the included angle θ1 in the upstream direction closer to the vapor deposition source can be smaller than that in the upstream direction farther from the vapor deposition source (reference). Figure 1 The included angle θ2 of the through-hole (in the direction closer to the doping source). In this way, it is easier to achieve co-doping of different materials deposited by multiple evaporation sources, ensuring good co-doping reliability.

[0102] Optionally, of the two included angles θ1 and θ2 of each vapor-deposited through-hole 01K, one included angle can be a right angle, i.e., equal to 90 degrees. The other included angle can be an acute angle, i.e., greater than 0 degrees and less than 90 degrees. Alternatively, of the two included angles θ1 and θ2 of each vapor-deposited through-hole 01K, each included angle can be an acute angle, i.e., both greater than 0 degrees and less than 90 degrees.

[0103] Example, reference Figure 2 and Figure 3The vapor-deposited through-hole 01K shown has two through-hole angles θ1 and θ2, where the through-hole angle θ1 is an acute angle and the through-hole angle θ2 is a right angle.

[0104] Optionally, taking a vapor-deposited through-hole 01K as an example, Figure 4 It also shows Figure 3 The diagram shows the equivalent structure of the vapor deposition mask. Figure 5 It also shows Figure 3 The cross-sectional equivalent diagram of the vapor deposition mask shown is shown. Figure 6 It also shows Figure 3 The diagram shown is a top view equivalent of the vapor deposition mask. Figure 7 It also shows Figure 4 The image shown is a bottom-view equivalent of the vapor deposition mask. It should be noted that, in conjunction with... Figure 4 The top-view equivalent diagram here is viewed from the side of the evaporation mask 00 closest to the substrate 10 to be evaporated, looking downwards. The bottom-view equivalent diagram here is viewed from the side of the evaporation mask 00 furthest from the substrate 10 to be evaporated, looking upwards. The following embodiments involve bottom and top views similarly, and will not be repeated. Furthermore, Figure 4 , Figure 6 and Figure 7 The upper opening K1 and the lower opening K2 are also marked. Combined with... Figures 4 to 7 It can also be seen that the diameter of the upper opening K1 of the vapor deposition through-hole 01K on the side closer to the substrate 10 is much smaller than the diameter of the lower opening K1 on the side farther away from the substrate 10.

[0105] Example, reference Figure 8 In the example shown, each vapor-deposited through-hole 01K has two through-hole angles θ1 and θ2, and each through-hole angle can be an acute angle.

[0106] Optional, Figure 9 It also shows Figure 8 The diagram shows the equivalent structure of the vapor deposition mask. Figure 10 It also shows Figure 8 The cross-sectional equivalent diagram of the vapor deposition mask 00 shown is shown. Figure 11 It also shows Figure 8 The top view of the vapor deposition mask 00 is shown. Figure 12 It also shows Figure 8 The diagram shows the equivalent bottom view of the vapor deposition mask 00. Furthermore, Figure 9 , Figure 11 and Figure 12 The upper opening K1 and the lower opening K2 are also marked.

[0107] Optionally, of the two included angles θ1 and θ2 of each vapor-deposited via 01K, the smallest included angle (e.g., the included angle θ1 described in the above embodiment) can be greater than or equal to the arctangent of the ratio of the thickness d of the mask body 01 to the first aperture r1, and less than or equal to the arctangent of the ratio of the thickness of the mask body 01 to the second aperture r2. That is, arctan(d / r2) ≥ θ1 ≥ arctan(d / r1).

[0108] Furthermore, combined Figure 2 and Figure 3 The first aperture r1 can be the aperture of the opening (i.e., the lower opening) of the vapor-deposited via 01K on the side away from the substrate 10 when it extends to an adjacent sub-pixel region A1. The second aperture r2 can be the aperture of the opening of the vapor-deposited via 01K on the side away from the substrate 10 when it extends to each adjacent sub-pixel region. That is, the minimum via angle θ1 is related to the aperture of the opening of the vapor-deposited via 01K on the side away from the substrate 10, and the aperture of the opening of the vapor-deposited via 01K on the side away from the substrate 10 is related to the number of sub-pixel regions A1 extended to by the opening of the vapor-deposited via 01K on the side away from the substrate 10.

[0109] As an optional implementation method, combined with Figure 2 , Figure 3 and Figure 8 As can be seen, along the direction perpendicular to the substrate 10 to be vapor-deposited, the vapor-deposited through-hole 01K described in this embodiment can be in the shape of a trumpet, and the vapor-deposited through-hole 01K can also be called a trumpet-shaped through-hole.

[0110] In the embodiment where the diameter of the upper opening is smaller than that of the lower opening, it can be understood that the trumpet shape in this embodiment refers to a shape in which the diameter of the vapor deposition through-hole 01K gradually decreases along the direction close to the substrate 10 to be vaporized. The small opening end of this trumpet-shaped through-hole (i.e., the upper opening near the side of the substrate 10 to be vaporized) can be close to the side of the substrate 10 to be vaporized. After the vapor deposition mask 00 is aligned with the substrate 10 to be vaporized, the small opening end coincides with the position of the corresponding sub-pixel area A1, that is, they overlap.

[0111] As some other alternative implementation methods, see [reference]. Figure 13 As can be seen from another vapor deposition mask shown, each vapor deposition via 01K described in this embodiment may include a plurality of sub-vias 01K1 arranged at intervals along a direction X1 parallel to the substrate 10 to be vapor deposited.

[0112] Furthermore, the openings (i.e., upper openings) of the plurality of sub-vias 01K1 near the substrate 10 to be deposited can overlap (or be considered interconnected), and the openings (i.e., lower openings) of each pair of adjacent sub-vias 01K1 away from the substrate 10 to be deposited can be separated by the mask body 01. That is, the opening positions of the plurality of sub-vias 01K1 near the substrate 10 to be deposited can be the same, and after aligning the evaporation mask 00 with the substrate 10 to be deposited, the interconnected portion positions coincide with the corresponding sub-pixel area A1 positions, i.e., they overlap.

[0113] Optionally, in scenarios where different materials are deposited from multiple evaporation sources to achieve co-doping, each evaporation via 01K has multiple sub-vias 01K1 that correspond one-to-one with multiple evaporation sources. Each evaporation source can be used to deposit material onto the substrate 10 to be deposited along one of the corresponding sub-vias 01K1.

[0114] Optionally, in the plurality of sub-vias 01K1, each sub-via 01K1 may have two opposing via angles in a direction parallel to the substrate 10 to be vapor-deposited. Furthermore, the two via angles of each sub-via 01K1 may be equal, but the via angles of the different sub-vias 01K1 may not be equal. That is, the diameter of each sub-via 01K1 is the same at all points.

[0115] For example, refer to Figure 13 The vapor-deposited through-hole 01K shown includes two sub-through-holes 01K1. In this application scenario, the included angle between the two sub-through-holes 01K1 can be as described above. Figure 2 , Figure 3 and Figure 8 The included angles θ1 and θ2 of the through holes are marked in the middle.

[0116] Furthermore, as described in the above embodiments, in the two sub-through holes 01K1, the included angle between the two holes of one sub-through hole 01K1 can both be acute angles, while the included angle between the two holes of the other sub-through hole 01K1 can both be right angles, corresponding to the above... Figure 2 and Figure 3 The embodiment shown. Alternatively, in the two sub-through holes 01K1, the included angle between the two through holes of each sub-through hole 01K1 can both be acute angles, corresponding to the above. Figure 8 The illustrated embodiment.

[0117] Example, Figure 13 The vapor deposition mask shown includes two sub-through holes 01K1, in which the included angle (i.e., θ1) of the two holes in one sub-through hole 01K1 is an acute angle, and the included angle (i.e., θ2) of the two holes in the other sub-through hole 01K1 is a right angle.

[0118] Optional, Figure 14 It also shows Figure 13The diagram shows the equivalent structure of the vapor deposition mask. Figure 15 It also shows Figure 13 The cross-sectional equivalent diagram of the vapor deposition mask shown is shown. Figure 16 It also shows Figure 13 The top view equivalent diagram of the vapor deposition mask 00 in the vapor deposition apparatus shown. Figure 17 It also shows Figure 13 The diagram shows the equivalent bottom view of the vapor deposition mask. Furthermore, Figure 14 , Figure 16 and Figure 17 The text also indicates the upper opening K1 and the lower opening K2, combined with... Figures 14 to 17 It can also be seen that the vapor deposition via 01K can include two sub-vias 01K1 arranged at intervals, and the upper openings K1 of the two sub-vias 01K1 overlap each other, while the lower openings K2 of the two sub-vias 01K1 are separated by the mask body 01. That is, one sub-via 01K1 can be an oblique hole, and the other sub-via 01K1 can be a straight hole. Correspondingly, the portion of the vapor deposition mask 00 used to separate the two sub-vias 01K1 can be... Figure 13 The right triangle shown.

[0119] Example, Figure 18 In the vapor deposition mask shown, the included angles (i.e., θ1 and θ2) between the two through holes of each sub-through hole 01K1 can both be acute angles.

[0120] Optional, Figure 19 It also shows Figure 18 The diagram shows the equivalent structure of the vapor deposition mask. Figure 20 It also shows Figure 18 The cross-sectional equivalent diagram of the vapor deposition mask shown is shown. Figure 21 It also shows Figure 18 The diagram shown is a top view equivalent of the vapor deposition mask. Figure 22 It also shows Figure 19 The diagram shows the equivalent bottom view of the vapor deposition mask. Furthermore, Figure 19 The upper opening K1 and the lower opening K2 are also schematically marked. That is, both sub-through holes 01K1 can be oblique holes. Correspondingly, the portion of the vapor deposition mask 00 used to separate the two sub-through holes 01K1 can be... Figure 18 The non-right-angled triangle shown.

[0121] Optionally, in this embodiment of the present disclosure, the orthographic projection of the opening (i.e., the upper opening K1) of the vapor-deposited via 01K on the side near the substrate 10 to be vapor-deposited can be circular as shown in the figure, or in some other embodiments it can be elliptical or rectangular. The orthographic projection of the opening (i.e., the upper opening K1) of the vapor-deposited via 01K on the side near the substrate 10 to be vapor-deposited can be elliptical as shown in the figure. Or in some other embodiments it can be rectangular.

[0122] By setting the opening of the evaporation through-hole 01K to be elliptical, sub-pixels can be evaporated at more locations on the substrate 10 to be evaporated, ensuring that the prepared display panel has a high resolution.

[0123] Optional, see reference Figure 23 In this embodiment of the present disclosure, the mask plate body 00 may include a frame portion 001 and an opening portion 002. The frame portion 001 may be used to define the opening portion 002, and the opening portion 002 may be used to form a plurality of vapor deposition through holes 01K as described in the above embodiments.

[0124] The included angle of the vapor deposition through-hole 01K can be smaller than the included angle α1 between the frame portion 001 and the substrate 10 to be vapor-deposited. In this way, the thickness of the opening portion 002 can be thinner than the thickness of the frame portion 001, avoiding sagging of the opening portion 002. It can also ensure that different vapor deposition sources can reliably vapor-deposit materials on the substrate 10 to be vapor-deposited through the vapor deposition through-hole 01K, avoiding material delamination and ensuring a better co-doping effect.

[0125] Optionally, in this embodiment of the disclosure, the material of the frame portion 001 may include single-crystal silicon (SCS). The material of the opening portion 002 may include at least one of single-crystal silicon SCS, silicon oxide (SiNx), and silicon nitride (SiOx), i.e., a combination of one or more of single-crystal silicon SCS, silicon oxide (SiNx), and silicon nitride (SiOx).

[0126] For example, the material of the frame portion 001 and the material of the opening portion 002 can both be monocrystalline silicon SCS.

[0127] For example, the material of the frame portion 001 may include monocrystalline silicon SCS, and silicon oxide (SiOx) material may be embedded in the monocrystalline silicon SCS. The material of the opening portion 002 may also be monocrystalline silicon SCS.

[0128] For example, the frame portion 001 can be made of monocrystalline silicon (SCS), and the opening portion 002 can be made of silicon oxide (SiNx).

[0129] In summary, this disclosure provides a vapor deposition mask. The vapor deposition mask includes a mask body and a plurality of vapor deposition through-holes penetrating the mask body. Each of the plurality of vapor deposition through-holes corresponds one-to-one with a plurality of spaced sub-pixel regions on the substrate to be vapor-deposited, allowing vapor deposition sources to vapor-deposit into multiple sub-pixels of different colors in these regions. Because the aperture of the opening of each vapor deposition through-hole near the substrate is smaller than the aperture of the opening away from the substrate, and because it can extend to at least one adjacent sub-pixel region with different sub-pixel colors, the included angle of the vapor deposition through-holes can be flexibly set, and the vapor deposition angle of the vapor deposition source can be adjusted, enabling multiple vapor deposition sources to reliably vapor-deposit different materials onto the substrate, and the different vapor-deposited materials can be reliably co-doped, resulting in a better vapor deposition effect.

[0130] Figure 24 This is a schematic diagram of the structure of a vapor deposition apparatus provided in an embodiment of this disclosure. Figure 24 As shown, the vapor deposition apparatus includes: a plurality of vapor deposition sources 11, and as described above. Figures 2 to 23 Any of the vapor deposition masks shown 00.

[0131] The plurality of vapor deposition sources 11 are located on the side of the vapor deposition mask 00 away from the substrate 10 to be vapor deposited, and the plurality of vapor deposition sources 11 are arranged at intervals along a direction X1 parallel to the substrate 10 to be vapor deposited.

[0132] In this configuration, the nozzle of each evaporation source 11 faces the evaporation mask 00, and each evaporation source 11 is used to deposit material into the sub-pixel region A1 of the substrate 10 to be evaporated through the evaporation through-hole 01K of the evaporation mask 00 to form sub-pixel P1. Each evaporation source 11 deposits a different material. In this way, material co-doping can be achieved to obtain the desired co-doped functional film layer, such as a light-emitting layer.

[0133] Example, Figure 24 Two vapor deposition sources 11 are shown only schematically. As can be seen from the above embodiments, one of the two vapor deposition sources 11 can be the main source, and the other vapor deposition source 11 can be the doping source.

[0134] Furthermore, a vapor deposition angle, also known as a vapor deposition angle, can be formed between the nozzle of each vapor deposition source 11 and the substrate 10 to be vapor deposited. Figure 24 In the vapor deposition source 11, the vapor deposition angle of the doped source is marked as θ3, and the vapor deposition angle of the main source is marked as θ4. The difference between each vapor deposition angle and the through-hole angle of the vapor deposition via 01K is less than a difference threshold. Optionally, the difference threshold can be small, generally between 0 and 0.5. This ensures that the difference between the vapor deposition angle and the through-hole angle is small, tending to be close to or exactly equal to each other.

[0135] It should be noted that the difference between the vapor deposition angle and the through-hole angle of the vapor deposition through-hole 01K is less than the difference threshold. This can mean that for each through-hole angle, the difference between the vapor deposition angle of the vapor deposition source closest to it and the through-hole angle of the vapor deposition through-hole 01K is less than the difference threshold.

[0136] Studies have shown that by setting the vapor deposition through-hole 01K structure and the included angle to meet the requirements described in the above embodiments, different materials vaporized by multiple vapor deposition sources 11 can be reliably doped on the substrate 10 to be vaporized, and materials vaporized along a specific vapor deposition angle can be vaporized to the corresponding area, avoiding vaporization to the inner wall of the vapor deposition through-hole 01K or other locations, thus ensuring that the vapor deposition source 11 can reliably vaporize the material onto the substrate 10 to be vaporized.

[0137] In summary, this disclosure provides a vapor deposition apparatus. The apparatus includes a vapor deposition mask and multiple vapor deposition sources. The vapor deposition mask includes a mask body and multiple vapor deposition through-holes penetrating the mask body. These multiple vapor deposition sources can be used to deposit different materials onto a substrate through the vapor deposition through-holes, achieving material co-doping. Because the aperture of the opening near the substrate is smaller than the aperture of the opening away from the substrate, and it can extend to at least one adjacent sub-pixel region with different sub-pixel colors, the included angle of the vapor deposition through-holes can be flexibly set, and the vapor deposition angle of the vapor deposition sources can be adjusted, allowing multiple vapor deposition sources to reliably deposit different materials onto the substrate, and the deposited different materials can be reliably co-doped, resulting in a good vapor deposition effect.

[0138] Optional, combined Figure 24 In this embodiment of the disclosure, the vapor deposition apparatus may include two vapor deposition sources 11, and the vapor deposition vias 01K may have two opposing via angles θ1 and θ2 in a direction parallel to the substrate 10 to be vapor deposited. Furthermore, the vapor deposition angle of each vapor deposition source 11 may be equal to the adjacent via angle of the two via angles of the vapor deposition via 01K. For example, refer to… Figure 24 The evaporation angle θ3 of the doped source can be exactly equal to the angle θ1 of the nearest via, and the evaporation angle θ4 of the main source can be exactly equal to the angle θ2 of the nearest via. That is, the difference threshold described in the above embodiment can be 0, and the difference between the evaporation angle and the via angle of the evaporated via 01K is equal to the difference threshold, i.e., equal to 0.

[0139] Thus, it can be considered that the nozzle direction of each vapor deposition source 11 is parallel to the inner wall of the nearest side of the vapor deposition through-hole 01K, that is, the vapor deposition direction is the same as the extension direction of the corresponding inner wall, which can also be called matching. In this way, it can be further ensured that each vapor deposition source 11 reliably vapor deposits material onto the substrate 10 to be vapor deposited through the vapor deposition through-hole 01K, and does not form it in other locations (e.g., the inner wall).

[0140] Optional, Figure 24 Therefore Figure 2 and Figure 3 Taking the structure shown as an example, a schematic diagram of a vapor deposition apparatus including a vapor deposition source is shown. Figure 25 by Figure 8 Taking the structure shown as an example, a schematic diagram of another vapor deposition apparatus including a vapor deposition source is illustrated. Figure 26 by Figure 13 Taking the structure shown as an example, a schematic diagram of another vapor deposition apparatus including a vapor deposition source is illustrated. Figure 27 by Figure 18 Taking the structure shown as an example, a schematic diagram of another vapor deposition apparatus including a vapor deposition source is illustrated. Figure 25 and Figure 27 In this process, the nozzles of the two vapor deposition sources 11 can be close to each other.

[0141] Among them, Figure 24 and Figure 25 The structure shown, where the cross-section of the vapor deposition via 01K is funnel-shaped along the direction X2 perpendicular to the substrate 10 to be vaporized, has a negative correlation between the spacing b between any two adjacent vapor deposition sources 11 and the smallest of the two included angles (e.g., θ1) of the vapor deposition via 01K. That is, the larger the included angle θ1, the smaller the spacing b can be; conversely, the smaller the included angle θ1, the larger the spacing b can be. The smallest included angle θ1 corresponds to the largest inclination of the inner wall, so here it can also be considered that the maximum inclination angle of the vapor deposition via 01K is negatively correlated with the spacing b. Based on this, after the vapor deposition mask 00 is prepared, the spacing b between any two adjacent vapor deposition sources 11 can be flexibly adjusted based on the included angle θ1 of the vapor deposition mask 00.

[0142] In addition, regarding Figures 24 to 27 In the structure shown, the spacing b between any two adjacent vapor deposition sources 11 can be negatively correlated with the first parameter and positively correlated with the second parameter. That is, the larger the first parameter, the smaller the spacing b, and the smaller the first parameter, the larger the spacing b; the larger the second parameter, the larger the spacing b, and the smaller the second parameter, the smaller the spacing b.

[0143] Among them, combined Figures 24 to 27 The first parameter can be the thickness d of the mask body 01 in the vapor deposition mask 00, and the thickness direction can be X2, which is perpendicular to the substrate 10 to be vapor deposited. The second parameter can be the product of the first sub-parameter and the second sub-parameter.

[0144] The first sub-parameter can be the distance 'a' between the intersection point P1 of the nozzle extension line of one evaporation source 11 and the evaporation through-hole 01K on the side away from the substrate 10 to be evaporated, and the intersection point P2 of the nozzle extension line of the other evaporation source 11 and the evaporation through-hole 01K on the side away from the substrate 10 to be evaporated. The intersection points P1 and P2 are only... Figure 24 Indicative symbols. For Figure 26 and Figure 27 In the structure shown, the spacing a can be considered as the spacing between the centers of the lower openings of the two sub-through holes 01K1. Figure 27 The distances between the center of the lower opening of each sub-via 01K1 and the center of the lower opening K2 of the vapor deposition via 01K are also schematically marked, namely a1 and a2. The second sub-parameter can be the sum of the first parameter (i.e., the thickness d of the mask body 01) and the vertical distance Ts between the multiple vapor deposition sources 11 and the vapor deposition mask 00.

[0145] For example, the spacing b between any two adjacent vapor deposition sources 11 can satisfy: b = a(d + Ts) / d.

[0146] As described in the above embodiments, d is the first parameter, a is the first sub-parameter, and Ts is the vertical distance between the plurality of vapor deposition sources 11 and the vapor deposition mask 00. For example, Ts can be 600 millimeters (mm), d can be 20 μm, a can be 4 μm, and b can be calculated to be 120.

[0147] Furthermore, for Figure 24 and Figure 26 For the structure shown, the included angle of the acute-angled through-hole is θ1 = arctan(d / a). Figure 27 In the structure shown, among the two through holes with acute angles θ1 and θ2, the angle θ1 of one through hole is arctan(d / a1), and the angle θ2 of the other through hole is arctan(d / a2).

[0148] That is, as can be seen from the above embodiments, in this disclosure, on the one hand, a funnel-shaped evaporation through-hole 01K can be designed on the evaporation mask 00 to match the evaporation angle of the evaporation source 11, so as to achieve the purpose of reliable co-doping of different materials. On the other hand, a sub-through-hole 01K1 with an angle consistent with the evaporation angle of the evaporation source 11 can be designed on the evaporation mask 00 to achieve the purpose of reliable co-doping of different materials.

[0149] Of course, in some embodiments, the original film layer of the display panel can be reused instead of the vapor deposition mask 00, thus saving costs. For example, see reference... Figure 28The display panel described in this embodiment further includes a pixel definition layer (PDL) located on one side of the substrate 10 to be vapor-deposited.

[0150] The pixel delimiting layer (PDL) can have multiple openings K0. The PDL can be used to confine different sub-pixels P1 in the display panel within different openings K0. The vapor deposition mask 00 can reuse the PDL. That is, the PDL has openings K0 and... Figures 24 to 27 The evaporation vias 01K shown are identical. "Identical" here can mean that the structure and mask tilt angle are the same. In the evaporation process, the pixel delimiting layer (PDL) can be directly used as the evaporation mask 00, in conjunction with the evaporation source 11 for evaporation. For example, Figure 29 by Figure 24 Taking the structure shown as an example, a schematic diagram of a vapor deposition apparatus that uses a pixel defining layer (PDL) as a vapor deposition mask 00 is illustrated.

[0151] In summary, this disclosure provides a vapor deposition apparatus. The apparatus includes a vapor deposition mask and multiple vapor deposition sources. The vapor deposition mask includes a mask body and multiple vapor deposition through-holes penetrating the mask body. These multiple vapor deposition sources can be used to deposit different materials onto a substrate through the vapor deposition through-holes, achieving material co-doping. Because the aperture of the opening near the substrate is smaller than the aperture of the opening away from the substrate, and it can extend to at least one adjacent sub-pixel region with different sub-pixel colors, the included angle of the vapor deposition through-holes can be flexibly set, and the vapor deposition angle of the vapor deposition sources can be adjusted, allowing multiple vapor deposition sources to reliably deposit different materials onto the substrate, and the deposited different materials can be reliably co-doped, resulting in a good vapor deposition effect.

[0152] Figure 30 This is a flowchart of a vapor deposition method provided in an embodiment of this disclosure. Figure 30 As shown, the method includes:

[0153] Step 3001: Provide the substrate to be vapor-deposited.

[0154] Step 3002: Using a vapor deposition apparatus, material is vapor deposited on the substrate to be vapor deposited to form multiple sub-pixels.

[0155] The vapor deposition equipment used can be Figures 24 to 27 Any of the vapor deposition apparatuses shown.

[0156] In summary, the embodiments of this disclosure provide a vapor deposition method. This method utilizes a vapor deposition apparatus to simultaneously vapor-deposit different materials onto a substrate to form multiple sub-pixels. The vapor deposition apparatus includes a vapor deposition mask and multiple vapor deposition sources. The vapor deposition mask includes a mask body and multiple vapor deposition through-holes penetrating the mask body. The multiple vapor deposition sources can be used to vapor-deposit different materials onto the substrate through the vapor deposition through-holes, achieving material co-doping. Because the aperture of the opening on the side of each vapor deposition through-hole closest to the substrate is smaller than the aperture of the opening on the side furthest from the substrate, and because it can extend to at least one adjacent sub-pixel region with different colors, the included angle of the vapor deposition through-holes can be flexibly set, and the vapor deposition angle of the vapor deposition sources can be adjusted, allowing multiple vapor deposition sources to reliably vapor-deposit different materials onto the substrate, and the vapor-deposited different materials can be reliably co-doped, resulting in a good vapor deposition effect.

[0157] It should be noted that the dimensions of layers and regions may be exaggerated in the accompanying drawings for clarity. Furthermore, it is understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element, or there may be intermediate layers. Additionally, it is understood that when an element or layer is referred to as being "below" another element or layer, it can be directly below the other element, or there may be more than one intermediate layer or element. Furthermore, it is also understood that when a layer or element is referred to as being "between" two layers or two elements, it can be the only layer between the two layers or two elements, or there may be more than one intermediate layer or element. Similar reference numerals throughout indicate similar elements.

[0158] Furthermore, the terminology used in the embodiments of this disclosure is for the purpose of explaining the embodiments of this disclosure only and is not intended to limit this disclosure. Unless otherwise defined, the technical or scientific terms used in the embodiments of this disclosure should be understood in their ordinary meaning as understood by one of ordinary skill in the art to which this disclosure pertains.

[0159] For example, in embodiments of this disclosure, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance. The term "multiple" refers to two or more unless otherwise expressly defined.

[0160] Similarly, words like "one" or "one" do not indicate a quantity limit, but rather that there is at least one.

[0161] The word “includes” or similar terms means that the elements or objects preceding “includes” or “include” cover the elements or objects listed after “includes” or “include” or their equivalents, and do not exclude other elements or objects.

[0162] "Up," "down," "left," or "right" are only used to indicate relative positional relationships. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0163] The above description is merely an optional embodiment of this disclosure and is not intended to limit this disclosure. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this disclosure should be included within the protection scope of this disclosure.

Claims

1. A vapor deposition mask, characterized in that, The evaporation mask is used to be disposed on one side of the substrate to be evaporated, and the substrate to be evaporated has a plurality of sub-pixel regions arranged at intervals; the evaporation mask includes: Mask plate body; Multiple evaporation through holes penetrating the mask plate body, each of the multiple evaporation through holes corresponding one-to-one with the multiple sub-pixel areas, so that the evaporation source can evaporate in the multiple sub-pixel areas to form multiple sub-pixels of different colors; Wherein, the aperture of the opening of each vapor deposition via near the substrate to be vapor deposition is smaller than the aperture of the opening away from the substrate to be vapor deposition, the opening of each vapor deposition via away from the substrate to be vapor deposition extends to at least one adjacent sub-pixel area, and the color of the vapor-deposited sub-pixel in the sub-pixel area corresponding to each vapor deposition via is different from the color of the vapor-deposited sub-pixel in the at least one adjacent sub-pixel area. Furthermore, each vapor deposition via includes a plurality of sub-vias arranged at intervals along a direction parallel to the substrate to be vapor deposited; the plurality of sub-vias correspond one-to-one with a plurality of different vapor deposition sources; the openings of the plurality of sub-vias on the side near the substrate to be vapor deposited overlap each other, and the openings of each pair of adjacent sub-vias on the side away from the substrate to be vapor deposited are separated by the mask body; among the plurality of sub-vias, each sub-via has two opposing via angles in a direction parallel to the substrate to be vapor deposited, and the two via angles of each sub-via are equal, while the via angles of each sub-via are not equal.

2. The vapor deposition mask according to claim 1, characterized in that, The array of multiple sub-pixel regions is arranged such that the multiple sub-pixels formed by vapor deposition in the multiple sub-pixel regions include multiple sub-pixels of three colors, and in the row direction, each sub-pixel is arranged in the order of three different colors of sub-pixels; the opening of each vapor deposition through-hole on the side away from the substrate to be vapor deposited extends to the two adjacent sub-pixel regions.

3. The vapor deposition mask according to claim 1, characterized in that, The spacing between the openings on the side of each pair of adjacent vapor-deposited vias away from the substrate to be vapor-deposited is greater than the spacing between two sub-pixels formed in the two sub-pixel regions corresponding to each pair of adjacent vapor-deposited vias.

4. The vapor deposition mask according to any one of claims 1 to 3, characterized in that, In a direction parallel to the substrate to be vapor-deposited, each vapor-deposited via has two opposing via angles. Each vapor deposition through-hole has two through-hole angles that are not equal, and in each vapor deposition through-hole, the through-hole angle in the upstream direction of the vapor deposition source is smaller than the through-hole angle in the upstream direction of the vapor deposition source.

5. The vapor deposition mask according to claim 4, characterized in that, Of the two through-holes in each vapor-deposited through-hole, one through-hole angle is a right angle and the other through-hole angle is an acute angle; Alternatively, in each vapor-deposited through-hole, the included angle between the two through-holes is an acute angle.

6. The vapor deposition mask according to claim 5, characterized in that, In each vapor-deposited through-hole, the smallest through-hole angle is greater than or equal to the arctangent of the ratio of the thickness of the mask body to the first aperture, and less than or equal to the arctangent of the ratio of the thickness of the mask body to the second aperture. Furthermore, the first aperture is the aperture of the opening on the side of the evaporation through-hole away from the substrate to be evaporated when the opening extends to an adjacent sub-pixel area; the second aperture is the aperture of the opening on the side of the evaporation through-hole away from the substrate to be evaporated when the opening extends to each adjacent sub-pixel area.

7. The vapor deposition mask according to any one of claims 1 to 3, characterized in that, Along a direction perpendicular to the substrate to be vapor-deposited, the cross-section of the vapor-deposited through-hole is funnel-shaped.

8. The vapor deposition mask according to any one of claims 1 to 3, characterized in that, The vapor-deposited through-hole includes two sub-through-holes; Furthermore, in the two sub-through holes, the included angle between the two holes in one sub-through hole is an acute angle, and the included angle between the two holes in the other sub-through hole is a right angle; Alternatively, in the two sub-through holes, the included angle between the two through holes in each sub-through hole is an acute angle.

9. The vapor deposition mask according to any one of claims 1 to 3, characterized in that, The orthographic projection of the opening of the vapor deposition through-hole on the side closer to the substrate to be vapor deposition onto the substrate is circular, elliptical, or rectangular; the orthographic projection of the opening of the vapor deposition through-hole on the side farther from the substrate to be vapor deposition onto the substrate is elliptical or rectangular.

10. The vapor deposition mask according to any one of claims 1 to 3, characterized in that, The ratio of the thickness of the mask plate body to the aperture of the opening on the side of the vapor deposition through hole away from the substrate to be vapor deposited is greater than or equal to 2.

11. The vapor deposition mask according to any one of claims 1 to 3, characterized in that, The mask plate body includes: a frame portion and an opening portion, wherein the frame portion is used to define the opening portion, and the opening portion is used to form the plurality of vapor deposition through holes; Wherein, the included angle of the vapor-deposited through-hole is smaller than the included angle between the frame portion and the substrate to be vapor-deposited.

12. The vapor deposition mask according to claim 11, characterized in that, The material of the frame portion includes monocrystalline silicon, and the material of the opening portion includes at least one of monocrystalline silicon, silicon oxide, and silicon nitride.

13. A vapor deposition apparatus, characterized in that, The vapor deposition apparatus includes: a plurality of vapor deposition sources, and a vapor deposition mask as described in any one of claims 1 to 12; The plurality of evaporation sources are located on the side of the evaporation mask away from the substrate to be evaporated in the display panel, and the plurality of evaporation sources are arranged at intervals along a direction parallel to the substrate to be evaporated. In this process, the nozzle of each vapor deposition source faces the vapor deposition mask, and each vapor deposition source is used to deposit material into the sub-pixel area of ​​the substrate to be vapor deposited through the vapor deposition through-hole of the vapor deposition mask to form a sub-pixel. The materials vaporized by each vapor deposition source are different. Furthermore, each vapor deposition source nozzle forms a vapor deposition angle with the substrate to be vapor deposited, and the difference between the vapor deposition angle and the through-hole angle of the vapor deposition through-hole is less than a difference threshold.

14. The vapor deposition apparatus according to claim 13, characterized in that, The vapor deposition apparatus includes: two vapor deposition sources; and in a direction parallel to the substrate to be vapor-deposited, the vapor deposition through-holes have two opposing through-hole angles. Furthermore, the evaporation angle of each evaporation source is equal to the evaporation angle of the two through holes in the evaporation through hole, with the adjacent through hole angle being equal.

15. The vapor deposition apparatus according to claim 13, characterized in that, The spacing between any two adjacent vapor deposition sources is negatively correlated with the first parameter and positively correlated with the second parameter; Wherein, the first parameter is the thickness of the mask body in the vapor deposition mask; the second parameter is the product of the first sub-parameter and the second sub-parameter; The first sub-parameter is the distance between the intersection of the nozzle extension line of one of the two adjacent vapor deposition sources and the side of the vapor deposition through-hole away from the substrate to be vaporized, and the intersection of the nozzle extension line of the other vapor deposition source and the side of the vapor deposition through-hole away from the substrate to be vaporized. The second sub-parameter is the sum of the first parameter and the vertical distance between the plurality of vapor deposition sources and the vapor deposition mask.

16. The vapor deposition apparatus according to claim 15, characterized in that, The spacing b between any two adjacent vapor deposition sources satisfies: b = a(d + Ts) / d; Wherein, d is the first parameter, a is the first sub-parameter, and Ts is the vertical distance between the plurality of vapor deposition sources and the vapor deposition mask.

17. The vapor deposition apparatus according to any one of claims 13 to 16, characterized in that, Along the direction perpendicular to the substrate to be vapor-deposited, the cross-section of the vapor-deposited through-hole is funnel-shaped; The spacing between any two adjacent vapor deposition sources is negatively correlated with the smallest of the two aperture angles of the vapor deposition via.

18. A vapor deposition method, characterized in that, The vapor deposition method includes: Provide the substrate to be vapor-deposited; Using the vapor deposition apparatus as described in any one of claims 13 to 17, material is vapor deposited on the substrate to be vapor deposited to form a plurality of sub-pixels.

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