A simulation method for electrostatic detection

Abstract

A simulation method for electrostatic discharge (ESD) detection, belonging to the field of ESD detection, is disclosed. It includes: establishing a physical model of the electrostatic field; establishing a simulated structural model of the charged object; determining the corresponding simulated physical boundary conditions; setting a finite element analysis model of the ESD detection space of the charged object; performing finite element analysis and solving; numerically fitting the simulation data obtained under different boundary conditions to obtain the corresponding electrostatic potential distribution formula; programming the obtained electrostatic potential distribution formula and writing it into the microcontroller program of the ESD sensor, calling different detection execution programs according to different usage environments. Employing a finite element simulation and solving mode, it can conveniently obtain the electrostatic parameters at any point within the space where the charged object is located; using it to simulate and verify various calibration methods / devices for ESD detection instruments can provide calibration and testing application solutions for ESD detection instruments that are more suitable for the actual conditions of ESD elimination work sites; and it helps improve the environmental adaptability of products.

Description

Technical Field

[0001] This invention belongs to the field of electrostatic detection technology, and particularly relates to a method for detecting static voltage and / or electrostatic field. Background Technology

[0002] During the manufacturing and transportation of products, the numerous extrusion, peeling, and friction processes inevitably generate a large amount of static charge. This static charge can seriously threaten product quality and safety, reduce production efficiency, and cause significant losses. Therefore, comprehensive inspection and monitoring of the static charge on products is of paramount importance.

[0003] Due to the complexity of the production site's process environment, such as installing electrostatic voltage sensors inside machinery / equipment to perform electrostatic detection on charged bodies inside the machinery / equipment; or performing electrostatic detection on charged objects surrounded by suspended or poorly grounded metal supports or robotic arms; or installing electrostatic voltage sensors inside anti-static control boxes to perform electrostatic detection on charged objects inside the anti-static control boxes; or performing electrostatic detection on charged objects in open areas, these vastly different working environments will have a significant impact on electrostatic voltage detection.

[0004] Currently, the detection of static electricity on products is mainly carried out by measuring the static voltage on the product surface. The main testing instruments are electrostatic voltmeters and static voltage sensors. They mostly utilize the principle of electrostatic induction and adopt a non-contact electrostatic detection method to detect static electricity on the surface of an object; in essence, they detect the superimposed electrostatic field generated by the static charges on the surface of the object.

[0005] The testing or calibration methods for such electrostatic voltage measuring instruments are mainly based on the national metrological standard "JJF1517-2015 Calibration Specification for Non-contact Electrostatic Voltage Measuring Instruments". The testing environment and methods are limited, and products tested and debugged by this method cannot cope with diverse application environments.

[0006] In addition, the voltage value of the object surface measured by the static voltage meter and static voltage sensor is closely related to the nature and size of the detection space where the detector is located, and will directly affect the final detection result.

[0007] Based on the above-mentioned practical applications and testing technology reasons, existing static voltage detection products and their applications have the following technical defects:

[0008] 1) During use, only the charged object itself is considered, while the influence of the surrounding spatial environment on the detection results is ignored;

[0009] 2) Using the above standard test methods to debug and calibrate the detection performance of the static voltage sensor requires a lot of test preparation work and test data, which is costly and inefficient.

[0010] How to more scientifically, rationally, and intuitively study / display the spatial electric field distribution of actual charged objects, and provide support for product performance improvement and rational application and promotion, is a practical technical problem that urgently needs to be solved in research and development. Summary of the Invention

[0011] The technical problem this invention aims to solve is to provide a simulation method for electrostatic discharge (ESD) detection. It employs finite element method (FEM) simulation and solution for typical application environments to obtain the corresponding electrostatic potential distribution formula. Based on the simulation results, the electrostatic parameters at any point within the space containing a charged object can be conveniently obtained, allowing for a direct observation of the variation law of the electrostatic field formed by the charged body and the influence of the surrounding spatial environment on the detection results. Applying this method to simulate and verify various calibration methods / devices for ESD detection instruments can provide calibration and testing application solutions for ESD detection instruments that are more suitable for the actual conditions of ESD elimination work sites, thus improving the environmental adaptability of the product.

[0012] The technical solution of the present invention is to provide a simulation method for electrostatic detection, characterized by comprising the following steps:

[0013] 1) Analyze and determine the typical application environment of the electrostatic voltage sensor, and establish an electrostatic field physical model;

[0014] 2) Based on actual charged objects, establish a simulation structural model of the charged object;

[0015] 3) Based on typical application environments, determine the corresponding simulation physical boundary conditions and set up a finite element analysis model for the electrostatic detection space of charged objects;

[0016] 4) Perform finite element analysis and solve the problem;

[0017] 5) Numerical fitting is performed on the simulation data obtained under different boundary conditions to obtain the corresponding electrostatic potential distribution formula;

[0018] 6) The obtained electrostatic potential distribution formula is programmed and written into the electrostatic sensor microcontroller program, and different detection execution programs are called according to different usage environments.

[0019] Specifically, the typical application environments include the following typical electrostatic physical fields:

[0020] 1) Electrostatic shielding / metal shielding of the electrostatic field inside the machine;

[0021] 2) An electrostatic field exists around a suspended conductor;

[0022] 3) The electrostatic field inside the dielectric;

[0023] 4) Electrostatic field in open / fully insulated spaces.

[0024] Specifically, the simulation method involves importing the drawn three-dimensional object structure into finite element simulation software and establishing a simulation domain centered on this three-dimensional object structure.

[0025] Furthermore, the size of the simulation domain is 5-10 times that of the simulated object.

[0026] Specifically, the simulation method involves setting the desired solution domain within the simulation domain and setting the portion of the simulation domain outside the solution domain as an infinite element domain to calculate the electrostatic field distribution in the space where the charged object is located.

[0027] Furthermore, the simulation method applies the following equations to the entire simulation domain:

[0028]

[0029] D=ε0ε r E

[0030]

[0031] Where E is the electric field strength (V / m), V is the static voltage (V), and D is the electric displacement (C / m). 2 ), ρ v Charge density (C / m 3 ), ε0=8.854187817×10 -12 F / m is the vacuum permittivity, ε r It is the relative permittivity;

[0032] Set the boundary conditions of the three-dimensional object structure / actual charged object to volume or surface static voltage, charge quantity or charge density;

[0033] Set the boundary conditions of the solution domain boundary surface to ground, floating potential, dielectric shielding, or zero charge;

[0034] Set the boundary conditions of the entire outer interface of the simulation domain to ground.

[0035] Specifically, the simulation method sets up corresponding solvers for each solution boundary condition and calculates the spatial electrostatic field in the simulation domain under different boundary conditions.

[0036] Furthermore, the simulation method generates a spatial potential distribution map under specific boundary conditions, or obtains spatial electrostatic data under different horizontal or vertical distance parameters by setting spatial data intercepts, and forms a data map.

[0037] Specifically, the simulation method described above involves curve fitting of the simulation data obtained under different boundary conditions to generate a fitting formula:

[0038] y = A1*exp(-x / t1) + y0,

[0039] Where: y is the spatial potential; x is considered as the detection distance; A1, t1, and y0 are constants determined by the boundary conditions.

[0040] The simulation method described in this invention can conveniently obtain the electrostatic parameters at any point in the space where a charged object is located, based on its simulation results. It can also intuitively show the changing pattern of the electrostatic field formed by the charged object and the influence of the surrounding spatial environment on the detection results. It is applicable to the simulation verification of various calibration methods / devices for electrostatic voltage testing instruments, so as to provide a calibration and testing application scheme for electrostatic voltage testing instruments that is more suitable for the actual situation of electrostatic elimination work sites, thereby improving the environmental applicability of the product.

[0041] Compared with the prior art, the advantages of the present invention are:

[0042] 1. By adopting the technical solution of the present invention, the electrostatic parameters of any point in the space where the charged object is located can be obtained conveniently, and the variation law of the electrostatic field formed by the charged object and the influence of the surrounding spatial environment of the charged object on the detection results can be seen intuitively.

[0043] 2. It can be used to simulate and verify various calibration methods / devices for electrostatic voltage testing instruments, so as to provide calibration and testing application solutions for electrostatic voltage testing instruments that are more suitable for the actual conditions of electrostatic elimination work sites;

[0044] 3. The simulation data obtained under different simulated environmental conditions are fitted to obtain the corresponding fitting formula, which is then programmed and written into the microcontroller of the static voltage sensor. Different detection programs are called according to the usage environment, which greatly improves the environmental applicability of the product.

[0045] 4. The electrostatic detection simulation test method described in this technical solution can automatically generate simulation data, eliminating the need for extensive experimental preparation and test data, resulting in low implementation costs and high R&D efficiency. Attached Figure Description

[0046] Figure 1 This is a schematic diagram of the overall process framework of the present invention;

[0047] Figure 2 This is a schematic diagram of the structure of the square flat plate of the present invention;

[0048] Figure 3 This is a schematic diagram of the cube simulation domain wireframe structure of the present invention;

[0049] Figure 4 This is a diagram showing the solution domain / internal rendering structure and the infinite metadomain / external wireframe structure settings of the present invention;

[0050] Figure 5 This is a schematic diagram showing the setting of boundary conditions for the square flat plate structure of the present invention;

[0051] Figure 6 This is a schematic diagram of the simulation domain mesh settings of the present invention;

[0052] Figure 7 A schematic diagram illustrating the data cutoff line settings of this invention;

[0053] Figure 8 The Z-plane spatial potential distribution diagram of a square flat plate structure (grounding boundary condition);

[0054] Figure 9 The Z-plane spatial potential distribution diagram of the square plate structure (suspended potential boundary condition);

[0055] Figure 10 The Z-plane spatial potential distribution diagram of a square flat plate structure (dielectric shielding boundary condition);

[0056] Figure 11 The Z-plane spatial potential distribution diagram of a square flat plate structure (zero charge boundary condition);

[0057] Figure 12 The diagram shows the spatial potential curves under different boundary conditions along the center line of the square flat plate structure in the Z direction.

[0058] Figure 13-1 A diagram showing the fitting of spatial potential data for grounding boundary conditions along the centerline of a flat plate structure in the Z direction.

[0059] Figure 13-2 A diagram showing the fitting of spatial potential data for the floating potential boundary condition along the center line of the Z-direction of a flat plate structure;

[0060] Figure 13-3 A diagram showing the fitting of spatial potential data for dielectric shielding boundary conditions along the center line of a flat plate structure in the Z direction.

[0061] Figure 13-4 A diagram showing the fitting of space potential data for zero-charge boundary conditions along the center line of a flat plate structure in the Z direction. Detailed Implementation

[0062] The invention will now be further described with reference to the accompanying drawings.

[0063] See Figure 1 As shown, the overall methodological framework of this solution will be summarized below:

[0064] 1) Analyze and determine the typical application environment of the electrostatic voltage sensor, and establish an electrostatic field physical model;

[0065] 2) Based on actual charged objects, establish a simulation structural model of the charged object;

[0066] 3) Based on typical application environments, determine the corresponding simulation physical boundary conditions and set up a finite element analysis model for the electrostatic detection space of charged objects;

[0067] 4) Perform finite element analysis and solve the problem;

[0068] 5) Numerical fitting is performed on the simulation data obtained under different boundary conditions to obtain the corresponding electrostatic potential distribution formula;

[0069] 6) The obtained electrostatic potential distribution formula is programmed and written into the microcontroller program of the electrostatic voltage sensor. Different detection execution programs are called according to different usage environments.

[0070] The basic construction process of the model in the technical solution of this invention is described below:

[0071] Based on the typical application environment (or typical usage scenario) of the electrostatic voltage sensor described in the background above, four typical electrostatic physical fields can be identified:

[0072] 1. Electrostatic shielding (metal shielding) of the electrostatic field inside the machine;

[0073] 2. An electrostatic field exists around a suspended conductor;

[0074] 3. The electrostatic field inside the dielectric;

[0075] 4. Electrostatic field in open space (fully insulated space).

[0076] Based on the actual charged object, use 3D modeling software to draw its specific structure.

[0077] Open the finite element simulation software and select 3D modeling to enter the space electrostatic field simulation.

[0078] Import the drawn 3D object structure into the finite element simulation software, and establish a simulation domain centered on this 3D object structure (drawn within the simulation software). The size of the simulation domain should be larger than the size of the 3D object structure. Based on practical experience, this technical solution selects a simulation domain size 5-10 times larger than the simulated object (the aforementioned 3D object structure).

[0079] Set the desired solution domain within the simulation domain, and set the part of the simulation domain outside the solution domain as an infinite element domain, so as to calculate the electrostatic field distribution in the space where the charged object is located.

[0080] For each simulation domain and 3D object structure, you can choose to set material properties, or directly set the relative permittivity parameters of the materials for each domain and 3D object structure.

[0081] Based on electrostatic field theory, the following equations are applied to the entire simulation domain:

[0082]

[0083] D=ε0ε r E

[0084]

[0085] Set the boundary conditions of the three-dimensional object structure (actual charged object) to the volume or surface static voltage, that is: V = the applied static voltage value;

[0086] Alternatively, the boundary condition of the three-dimensional object structure (the actual charged object) can be set as the amount of charge, i.e.: Q0 = the amount of static charge.

[0087] Alternatively, the boundary condition of the three-dimensional object structure (the actual charged object) can be set as charge density, i.e., Q0 = the static charge density value.

[0088] It is worth noting that setting the boundary conditions of a three-dimensional object structure as charge quantity or charge density may better reflect the actual situation on the production site; while the static voltage boundary condition is more suitable for the conductive plate used in the calibration device of the static voltage test instrument, and the factory calibration of the static voltage test instrument is an important and critical link to ensure product quality.

[0089] Set the boundary condition of the solution domain boundary surface to ground, i.e., V = 0. This boundary condition corresponds to a metal shielded space, i.e., the charged object is located inside the mechanical / equipment.

[0090] Set the boundary condition of the solution domain boundary surface to a floating potential, i.e.: V≡const. This boundary condition corresponds to the presence of suspended metal or conductive bodies within the detection space, i.e., the presence of ungrounded or poorly grounded robotic arms, mounting brackets, etc., around the charged object.

[0091] Set the boundary conditions of the solution domain boundary surface to dielectric shielding, i.e.: This boundary condition corresponds to a dielectric shielding space, that is, a charged object is located inside a solid medium such as an anti-static control box.

[0092] Where: d s ε represents the thickness of the dielectric shielding layer, which can be set according to actual conditions; alternatively, a smaller value can be selected to avoid affecting the actual physical field and calculation accuracy. rThe relative permittivity of the dielectric layer is 100 in this technical solution.

[0093] Set the boundary condition of the solution domain boundary surface to zero charge, i.e., n·D=0. This boundary condition corresponds to a completely insulated space, that is, the charged object is located in an open area.

[0094] Set the boundary conditions of the entire outer interface of the simulation domain (outer interface of the infinite element domain) to ground, i.e., V = 0.

[0095] Electrostatic physics field meshing is performed on the entire simulation domain: free tetrahedral meshes are applied to the solution domain to accommodate large structural size variations; a sweep is used to generate hexahedral meshes for the infinite element domain to reduce computational costs.

[0096] For each of the four boundary conditions, four solvers are set up to calculate the spatial electrostatic field in the simulation domain under different boundary conditions.

[0097] After the calculation is completed, in the result generation module, three-dimensional plotting settings are made to generate a spatial potential distribution map under specific boundary conditions; data cut-off lines can also be set to obtain spatial static voltage data under different horizontal and / or vertical distance parameters and form a data map.

[0098] The simulation data obtained under different boundary conditions are subjected to curve fitting to generate fitting formulas, which are then programmed and written into the microcontroller of the electrostatic voltage sensor. This allows the detection execution program under different boundary conditions to be called according to different usage environments / scenarios.

[0099] Therefore, based on the simulation results, we can not only observe and analyze the spatial electrostatic field characteristics of charged objects, but also provide strong theoretical and technical support for the product development and market application of electrostatic detection instruments.

[0100] Specifically, the implementation process of the technical solution of the present invention is described below with reference to the accompanying drawings:

[0101] 1. This technical solution first sets up a square flat plate (see...) Figure 2 This is used to simulate a surface-charged object. The square flat plate structure can be first drawn using 3D drawing software, then opened in finite element simulation software. Select 3D modeling, then enter the electrostatic simulation module, and import the 3D structure into the finite element simulation software.

[0102] 2. Using this square flat plate structure as the center, establish a cubic simulation domain in the simulation software (see...). Figure 3 The simulation domain size should be larger than the size of the three-dimensional object structure. Based on practical experience, this scheme selects a simulation domain size that is 5-10 times the size of the square flat plate structure.

[0103] 3. Set the required solution geometry within the simulation domain to generate the solution domain (i.e., the detection space), and set the portion of the simulation domain outside the solution domain as an infinite element domain (see...). Figure 4 ).

[0104] 4. Select and set material properties for each simulation domain and plate structure. For example, in this technical solution, the material of the plate is set to 304 stainless steel, and the material of the required solution domain and infinite element domain is set to air; or the relative permittivity parameters of the materials of each domain and plate can be set directly.

[0105] 5. Based on electrostatic field theory, apply the following equations to the entire simulation domain:

[0106]

[0107] D=ε0ε r E

[0108]

[0109] Where E is the electric field strength (V / m), V is the static voltage (V), and D is the electric displacement (C / m). 2 ), ρ v Charge density (C / m 3 ), ε0=8.854187817×10 -12 F / m is the vacuum permittivity, ε r is the relative permittivity.

[0110] 6. Set the boundary condition of the square plate structure to a static voltage, that is: set the applied static voltage to the square plate (see...). Figure 5 For example, the voltage across the plate is V1 = 1000V;

[0111] 7. Alternatively, the boundary condition of the plate structure can be set as a charge quantity, i.e., the plate carries a set static charge, such as Q1 = 1.6 × 10⁻⁶. -10 C;

[0112] 8. Alternatively, modify the material of the flat plate structure to an insulating material, such as glass, and set its boundary conditions to charge density (charge density boundary conditions need to be set for the specific charged surface), i.e., for example, the charge density on the upper surface of the flat plate is Q1 = 1.6 × 10⁻⁶. -10 C / m 2 .

[0113] It is worth noting that setting the boundary conditions of a three-dimensional object structure as charge quantity or charge density may better reflect the actual situation on the production site, because the charged bodies in the actual production process are mostly surface-charged insulators; while the conductive plate used for testing in the electrostatic voltage testing instrument calibration device is more suitable for using electrostatic voltage as the boundary condition, which is more in line with the relevant requirements in the national metrology standard "JJF 1517-2015 Calibration Specification for Non-Contact Electrostatic Voltage Measuring Instrument".

[0114] 9. To simulate electrostatic discharge (ESD) detection of charged objects inside mechanical / equipment devices, the boundary conditions of the solution domain boundary surface must be set to ground (this boundary condition corresponds to a metal shielded space), that is: for Figure 4 The six boundary faces of the solution domain (a six-sided cube) are set as ground planes with V=0.

[0115] 10. To simulate electrostatic detection when there are ungrounded or poorly grounded suspended metal objects such as robotic arms or mounting brackets around a charged object, the boundary conditions of the solution domain boundary surface must be set to a floating potential (this boundary condition corresponds to the case where there is suspended metal or a conductor in the detection space). Its describing equation is: V≡const,

[0116] 11. To simulate electrostatic detection when a charged object is located inside a solid medium such as an anti-static control box, the boundary conditions of the solution domain boundary surface must be set as dielectric shielding (this boundary condition corresponds to the dielectric shielding space), and its describing equation is:

[0117] Where: d s The dielectric shielding layer thickness can be set according to actual conditions; or a smaller value can be selected, preferably one that does not affect the actual physical field and calculation accuracy. This scheme sets it to 0.0001m; ε r The relative permittivity of the dielectric layer is ε, which is set to ε in this technical solution. r =100.

[0118] 12. To simulate electrostatic detection of charged objects in an open area, the boundary conditions of the solution domain boundary surface must be set to zero charge (this boundary condition corresponds to a fully insulated space), i.e.: n·D=0.

[0119] 13. Set the boundary conditions of the entire external environment / surface of the simulation domain (the outer interface of the infinite element domain) to ground, that is, with zero potential at infinity, V = 0.

[0120] 14. Perform electrostatic physics field mesh generation for the entire simulation domain (see...) Figure 6For the solution domain, a finer free tetrahedral mesh is applied to accommodate larger structural size variations and meet computational accuracy requirements; while for the infinite element domain, since the spatial electrostatic field is weaker, a sweeping method is used to generate a sparser regular hexahedral mesh to reduce computational costs.

[0121] 15. For the above four solution domain boundary conditions, set up four solvers and calculate the spatial electrostatic field distribution in the simulation domain under different boundary conditions.

[0122] 16. After the calculation is complete, the 3D plotting settings can be configured in the results generation module to generate a spatial potential distribution map under specific boundary conditions (see...). Figure 8 , 9 (10, 11). Spatial data cutoff lines can also be set (see...). Figure 7 Acquire spatial electrostatic data under different horizontal or vertical distance parameters and generate data graphs (see...). Figure 12 ).

[0123] 17. Perform curve fitting on the simulation data obtained under different boundary conditions to generate the fitting formula: y=A1*exp(-x / t1)+y0 (see Figure 13-1 , 13-2 , 13-3, 13-4), where: y is the spatial potential (V); x is considered as the detection distance; A1, t1, y0 are constants determined by the boundary conditions.

[0124] 18. By programming the fitting formulas corresponding to the above different boundary conditions and writing them into the microcontroller of the static voltage sensor, the detection execution program under different boundary conditions can be called according to different usage environments / scenarios to perform static voltage detection on charged bodies.

[0125] 19. Based on the above simulation results, not only can the spatial electrostatic field characteristics of charged objects be observed and analyzed, but it also provides strong theoretical and technical support for the product development and market application of electrostatic detection instruments.

[0126] For example: according to Figure 8 , 9 Figures 10, 11, and 12 show that the spatial potential distribution differs significantly under different boundary conditions. This is especially true when a charged body is surrounded by a metallic conductor, or even a grounded metallic conductor, which greatly affects the spatial electric field distribution of the charged body itself. Therefore, special attention should be paid to the operating environment when calibrating or using electrostatic detection instruments.

[0127] The technical solution of this invention, based on typical application scenarios of electrostatic voltage sensors, identifies several typical electrostatic physical fields, establishes electrostatic field physical models, constructs simulation structural models of charged objects, determines corresponding simulation physical boundary conditions, sets a finite element analysis model of the electrostatic detection space of charged objects, performs finite element analysis and solution, and numerically fits the simulation data obtained under different boundary conditions to obtain the corresponding electrostatic potential distribution formula. This electrostatic potential distribution formula is then programmed and written into the electrostatic sensor microcontroller program. Depending on different application environments / scenarios, the detection execution program under different boundary conditions is called to perform electrostatic voltage detection on charged bodies. Based on the simulation results, not only can the spatial electrostatic field characteristics of charged objects be observed and analyzed, but it also provides strong theoretical and technical support for the product development and market application of electrostatic detection instruments.

[0128] By employing the technical solution of this invention, electrostatic parameters at any point in the space where a charged object is located can be conveniently obtained, allowing for a direct observation of the changing patterns of the electrostatic field formed by the charged object and the influence of the surrounding spatial environment on the detection results. It can be used to simulate and verify various calibration methods / devices for electrostatic voltage testing instruments, providing calibration and testing application solutions for electrostatic voltage testing instruments that are more suitable for the actual conditions of electrostatic elimination work sites. It improves the environmental applicability of the product, can automatically generate simulation data, eliminates the need for extensive experimental preparation and testing data, and has low implementation costs and high R&D efficiency.

[0129] This invention can be widely used in the design or manufacture of electrostatic voltage and / or electrostatic field detection devices.

Claims

1. A simulation method for electrostatic detection, characterized in that: Includes the following steps: 1) Analyze and determine the typical application environment of the electrostatic voltage sensor, and establish an electrostatic field physical model; 2) Draw the specific three-dimensional structure of the actual charged object using 3D modeling software; 3) Based on the three-dimensional structure of the actual charged object, establish a simulation structural model of the charged object; 4) Based on typical application environments, determine the corresponding simulation physical boundary conditions and set up a finite element analysis model for the electrostatic detection space of charged objects; 5) Perform finite element analysis and solve the problem; 6) Numerical fitting is performed on the simulation data obtained under different boundary conditions to obtain the corresponding electrostatic potential distribution formula; 7) Program the obtained electrostatic potential distribution formula and write it into the electrostatic sensor microcontroller program, and call different detection execution programs according to different usage environments.

2. The simulation method for electrostatic detection according to claim 1, characterized in that: The typical application environments include the following typical electrostatic physical fields: 1) Electrostatic shielding / metal shielding of the electrostatic field inside the machine; 2) An electrostatic field exists around a suspended conductor; 3) The electrostatic field inside the dielectric; 4) Electrostatic field in open / fully insulated spaces.

3. The simulation method for electrostatic detection according to claim 1, characterized in that: The simulation method described above involves importing the drawn three-dimensional object structure into finite element simulation software and establishing a simulation domain centered on this three-dimensional object structure.

4. The simulation method for electrostatic detection according to claim 3, characterized in that: The size of the simulation domain is 5-10 times that of the simulated object.

5. The simulation method for electrostatic detection according to claim 1 or 3, characterized in that: The simulation method described above sets the required solution domain within the simulation domain and sets the portion of the simulation domain outside the solution domain as an infinite element domain to calculate the electrostatic field distribution in the space where the charged object is located.

6. The simulation method for electrostatic detection according to claim 1, characterized in that: The simulation method described above applies the following equations to the entire simulation domain: Where E is the electric field strength, in V / m; V is the static voltage, in V; and D is the electric displacement, in C / m. 2 , Charge density, in units of C / m³ 3 , The vacuum permittivity, It is the relative permittivity; Set the boundary conditions of the three-dimensional object structure / actual charged object to volume or surface static voltage, charge quantity or charge density; Set the boundary conditions of the solution domain boundary surface to ground, floating potential, dielectric shielding, or zero charge; Set the boundary conditions of the entire outer interface of the simulation domain to ground.

7. The simulation method for electrostatic detection according to claim 1 or 6, characterized in that: The simulation method described above sets up corresponding solvers for each solution boundary condition and calculates the spatial electrostatic field in the simulation domain under different boundary conditions.

8. The simulation method for electrostatic detection according to claim 6, characterized in that: The simulation method generates a spatial potential distribution map under the boundary conditions of the solution domain boundary surface, or obtains spatial electrostatic data under different horizontal or vertical distance parameters by setting spatial data intercepts, and forms a data map.

9. The simulation method for electrostatic detection according to claim 1, characterized in that: The simulation method described above performs curve fitting on the simulation data obtained under different boundary conditions to generate a fitting formula: y = A1 * exp(-x / t1) + y0, Where: y is the spatial potential; x is considered as the detection distance; A1, t1, and y0 are constants determined by the boundary conditions.

10. The simulation method for electrostatic detection according to claim 1, characterized in that: The simulation method described above can conveniently obtain the electrostatic parameters at any point in the space where the charged object is located, based on its simulation results. It can also intuitively show the changing pattern of the electrostatic field formed by the charged object and the influence of the surrounding spatial environment on the detection results.

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