Optical proximity correction method
By obtaining the key region and performing iterative correction in the optical proximity correction method, the problem of insufficient correction accuracy in the optical proximity correction method is solved, and accurate transfer of lithographic patterns is achieved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SEMICON MFG INT (SHANGHAI) CORP
- Filing Date
- 2022-09-01
- Publication Date
- 2026-07-21
AI Technical Summary
Existing optical proximity correction methods suffer from insufficient correction accuracy in semiconductor manufacturing, leading to severe distortion of lithographic patterns.
By acquiring the key areas based on the first exposure map and iteratively correcting the second map according to preset rules, a third map is formed, thereby improving the accuracy of the correction.
It improves the accuracy of optical proximity correction, making the lithographic pattern closer to the actual target pattern and reducing the influence of optical proximity effect.
Smart Images
Figure CN117666273B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductor manufacturing technology, and more particularly to an optical proximity correction method. Background Technology
[0002] Photolithography is a crucial technology in semiconductor manufacturing. It transfers patterns from a photomask to the surface of a silicon wafer, forming semiconductor products that meet design requirements. The photolithography process includes an exposure step, a development step following exposure, and an etching step following development. In the exposure step, light passes through the light-transmitting areas of the photomask and shines onto the silicon wafer coated with photoresist, causing a chemical reaction in the photoresist. In the development step, the different solubility of the developer in the photoresist and the non-photoresist is used to form a photolithographic pattern, transferring the photomask pattern onto the photoresist. In the etching step, the silicon wafer is etched based on the photolithographic pattern formed by the photoresist layer, further transferring the photomask pattern onto the silicon wafer.
[0003] In semiconductor manufacturing, as design dimensions continue to shrink and approach the limits of photolithography imaging systems, the diffraction effect of light becomes increasingly pronounced, leading to optical image degradation of the final design pattern. The actual photolithographic pattern formed is severely distorted relative to the pattern on the mask, resulting in a difference between the actual pattern formed on the silicon wafer and the design pattern. This phenomenon is called the optical proximity effect (OPE).
[0004] To correct the optical proximity effect, Optical Proximity Correction (OPC) was developed. The core idea of OPC is to establish an optical proximity correction model based on the consideration of counteracting the optical proximity effect. The photomask pattern is designed according to the optical proximity correction model. In this way, although the lithographic pattern and the corresponding photomask pattern have optical proximity effect, the cancellation of this phenomenon has been considered when designing the photomask pattern according to the optical proximity correction model. Therefore, the lithographic pattern after photolithography is close to the target pattern actually desired by the user.
[0005] However, existing optical proximity correction technologies still have many problems. Summary of the Invention
[0006] The technical problem solved by this invention is to provide an optical proximity correction method to improve the accuracy of optical proximity correction.
[0007] To address the aforementioned technical problems, the present invention provides an optical proximity correction method, comprising: providing a first pattern; performing exposure processing on the first pattern to form a first exposed pattern; obtaining a key region based on the first exposed pattern; obtaining a second pattern, the second pattern including a second graphic; and iteratively correcting the second pattern according to preset rules and the key region to form a third pattern.
[0008] Optionally, the first layout includes a first graphic, the outline of which has several sharp corners; the first exposure layout includes a first exposure graphic corresponding to the first graphic; based on the first exposure layout, a key area is obtained, including: based on the first layout and the first exposure layout, obtaining a deviation area formed by the boundary of the first graphic and the boundary of the first exposure graphic; performing simulation processing on the first graphic according to the deviation area to form a first simulation graphic in the first layout; and taking the area where the first simulation graphic is located in the first layout as the key area.
[0009] Optionally, the enclosed deviation area includes a first boundary corresponding to a portion of the boundary of the first graphic and a second boundary corresponding to a portion of the boundary of the first exposed graphic; the first graphic is simulated based on the deviation area to form a first simulated graphic, including: forming a stepped boundary based on the second boundary, wherein the minimum distance between each step in the stepped boundary and the second boundary is below a first preset value; and replacing a portion of the boundary in the first graphic corresponding to the first boundary with a stepped boundary to form the first simulated graphic.
[0010] Optionally, obtaining the key area based on the first exposure layout further includes: after forming the first simulation graphic, and before using the area where the first simulation graphic is located as the key area, performing fitting processing on the stepped boundary to form a fitting boundary; determining whether the minimum distance between the fitting boundary and the second boundary is below a second preset value, wherein the second preset value is less than or equal to the first preset value; when the minimum distance between the fitting boundary and the second boundary is below the second preset value, using the area where the first simulation graphic is located as the key area; when the minimum distance between the fitting boundary and the second boundary is greater than the second preset value, using the first simulation graphic as the previous first simulation graphic; and based on the previous first simulation graphic, performing simulation processing on the first graphic again according to the deviation area to form a first simulation graphic in the first layout, wherein the first simulation graphic is different from the previous first simulation graphic.
[0011] Optionally, based on the first exposure layout, obtaining the key area further includes: after forming the first simulation graphic, and before using the area where the first simulation graphic is located as the key area, performing fitting processing on the stepped boundary to form a fitting boundary; determining whether the fitting boundary coincides with the second boundary; when the fitting boundary coincides with the second boundary, using the area where the first simulation graphic is located as the key area; when the fitting boundary does not coincide with the second boundary, using the first simulation graphic as the previous first simulation graphic; based on the previous first simulation graphic, performing simulation processing on the first graphic again according to the deviation area to form the first simulation graphic in the first layout, wherein the first simulation graphic is different from the previous first simulation graphic.
[0012] Optionally, the second layout is iteratively modified according to preset rules and key areas to form a third layout, including: determining whether the positional relationship between the second graphic and the key areas meets the preset rules; when the positional relationship between the second graphic and the key areas does not meet the preset rules, modifying the second layout to form an intermediate third layout; using the intermediate third layout as the second layout, continuing to judge and modify until the preset conditions are met to form the third layout.
[0013] Optionally, the second layout is iteratively modified according to preset rules and key areas to form a third layout. It also includes: when the positional relationship between the second graphic and the key area meets the preset rules, the second layout is used as the third layout.
[0014] Optionally, the intermediate third version is used as the second version, and the judgment and correction process is continued until the preset conditions are met to form the third version. This includes: using the intermediate third version as the second version, continuing the judgment and correction process until the number of iterations and corrections reaches the preset number, and using the intermediate third version formed when the iterations and corrections reach the preset number as the third version.
[0015] Optionally, the middle third image is used as the second image, and the judgment and correction process continues until the preset conditions are met to form the third image. This includes: using the middle third image as the second image, continuing the judgment and correction process until the positional relationship between the second image and the key area meets the preset rules, and then using the second image as the third image.
[0016] Optionally, obtaining a second layout includes: providing a second target layout; performing etching processing on the second target layout to obtain etching deviation data; and performing compensation processing on the second target layout based on the etching deviation data to form a second layout.
[0017] Optionally, the second target layout includes a second target pattern; the second target layout is compensated according to the etching deviation data to form the second layout, including: offsetting the boundary of the second target pattern according to the etching deviation data to form the second pattern.
[0018] Optional, preset rules include: the second graphic is located within the critical area.
[0019] Optionally, preset rules include: the spacing between the boundary of the second graphic that extends beyond the key area and the boundary of the key area is below a third preset value.
[0020] Compared with the prior art, the technical solution of the embodiments of the present invention has the following beneficial effects:
[0021] In the optical proximity correction method provided by the present invention, a key area is obtained based on a first exposure pattern, and a second pattern is iteratively corrected according to preset rules and the key area to form a third pattern. Therefore, compared with the target pattern, the second pattern can be compared with the key area that is closer to the actual pattern, thereby improving the accuracy of the correction of the second pattern. Attached Figure Description
[0022] Figure 1 and Figure 2 This is a schematic diagram illustrating the steps of a layout correction method.
[0023] Figure 3 This is a schematic flowchart of an optical proximity correction method according to an embodiment of the present invention;
[0024] Figure 4 This is a schematic diagram of the iterative correction process in an optical proximity correction method according to an embodiment of the present invention;
[0025] Figures 5 to 15 This is a schematic diagram of the structure of each step of the optical proximity correction method in one embodiment of the present invention. Detailed Implementation
[0026] As described in the background section, there are still many problems with optical proximity correction in the prior art, which will be explained in detail below.
[0027] Figure 1 and Figure 2 This is a schematic diagram of the steps involved in a layout correction method.
[0028] Please refer to Figure 1 Provides a front-layer target layout (not shown), which includes the front-layer associated graphics 110.
[0029] Please continue to refer to this. Figure 1 Provides a pre-compensated current layer layout (not shown), which includes current layer graphic 120.
[0030] Please continue to refer to this. Figure 1Align the current layer layout with the target layout of the previous layer, and determine whether the current layer graphic 120 exceeds the range of the associated previous layer graphic 110.
[0031] It should be noted that, for ease of understanding, the outline of the preceding associated graphic 110 is represented by a dashed line.
[0032] Please refer to Figure 2 When the current layer graphic 120 exceeds the range of the previous layer associated graphic 110, the boundary of the current layer graphic 120 is offset to form a modified current layer graphic 130 within the range of the previous layer associated graphic 110.
[0033] However, in the above method, the preceding associated graph 110 has several sharp corners 121 (such as...). Figure 1 As shown in region A), after exposure and development on the wafer based on the previous layer associated pattern 110, an arc-shaped pattern boundary is usually formed. Therefore, the judgment on whether the boundary of the current layer pattern 120 needs to be offset based on the range of the previous layer associated pattern 110, and how much offset is needed, is inaccurate, resulting in poor accuracy of the correction of the current layer pattern 120.
[0034] To address the aforementioned technical problems, the present invention provides an optical proximity correction method, comprising: providing a first pattern; exposing the first pattern to form a first exposed pattern; obtaining a key region based on the first exposed pattern; obtaining a second pattern, the second pattern including a second graphic; and iteratively correcting the second pattern according to preset rules and the key region to form a third pattern. This improves the accuracy of the correction.
[0035] To make the above-mentioned objectives, features and beneficial effects of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
[0036] Figure 3 This is a schematic flowchart of an optical proximity correction method according to an embodiment of the present invention.
[0037] Please refer to Figure 3 Optical proximity correction methods include:
[0038] Step S100: Provide the first layout;
[0039] Step S200: Exposure processing is performed on the first map to form the first exposed map;
[0040] Step S300: Based on the first exposure layout, obtain the key area;
[0041] Step S400: Obtain the second version, which includes the second graphic.
[0042] Step S500: Based on preset rules and key areas, iteratively modify the second version of the map to form the third version.
[0043] Please combine Figure 3 refer to Figure 4 , Figure 4 This is a schematic flowchart of the iterative correction process in an optical proximity correction method according to an embodiment of the present invention. For step S500, the second layout is iteratively corrected according to preset rules and key areas to form a third layout, including:
[0044] Step S510: Based on preset rules and key areas, determine whether the positional relationship between the second graphic and the key areas meets the preset rules;
[0045] When the positional relationship between the second graphic and the key area meets the preset rules, step S511 is executed to use the second graphic as the third graphic.
[0046] When the positional relationship between the second graphic and the key area does not meet the preset rules, execute: step S512, correct the second graphic to form an intermediate third graphic; and step S513, use the intermediate third graphic as the second graphic, and continue to perform judgment and correction processing until the preset conditions are met to form the third graphic.
[0047] The following will be described in detail with reference to the accompanying drawings.
[0048] Figures 5 to 15 This is a schematic diagram of the structure of each step of the optical proximity correction method in one embodiment of the present invention.
[0049] Please refer to Figure 5 Provided the first version of the map 200.
[0050] The first version 200 includes the first graphic 210 (such as...) Figure 6 As shown), the outline of the first graphic 210 has several sharp angles (such as...). Figure 6 (As shown in region B).
[0051] The first map 200 is used to form the target map of the preceding layer.
[0052] Please refer to Figure 7 The first map 200 is exposed to form the first exposed map 300.
[0053] The first exposure layout 300 includes the first exposure pattern 310 corresponding to the first pattern 210 (e.g., ...). Figure 8 (As shown).
[0054] Since the first exposure pattern 310 is obtained by exposing the first pattern 200, the boundary corresponding to the sharp corner of the first pattern 210 in the first exposure pattern 310 will change from the sharp boundary shape in the first pattern 210 to a relatively blunt arc-shaped boundary.
[0055] In this embodiment, the exposure processing is a simulation process that simulates exposure.
[0056] Next, based on the first exposed layout 300, the key area is obtained. For detailed steps on obtaining the key area based on the first exposed layout 300, please refer to [link to relevant documentation]. Figures 9 to 11 .
[0057] Please refer to Figure 9 Based on the first pattern 200 and the first exposure pattern 300, the deviation area Z1 formed by the boundary of the first pattern 210 and the boundary of the first exposure pattern 310 is obtained.
[0058] The deviation zone Z1 formed by the encirclement includes: a first boundary (not shown in the figure) corresponding to a portion of the boundary of the first pattern 210, and a second boundary (not shown in the figure) corresponding to a portion of the boundary of the first exposure pattern 310.
[0059] Specifically, the sharp corners of the first pattern 210 include convex sharp corners and concave sharp corners. Among them, the deviation area Z1 formed by the boundary of the part of the convex sharp corner and the boundary of the first exposure pattern 310 is located inside the first pattern 210, and the deviation area Z1 formed by the boundary of the part of the concave sharp corner and the boundary of the first exposure pattern 310 is located outside the first pattern 210.
[0060] Please refer to Figure 10 and Figure 11 , Figure 11 yes Figure 10 A partially enlarged schematic diagram of region C, and the first graphic 210 is simulated based on the deviation region Z1 to form the first simulation graphic 410 in the first layout 200.
[0061] The area where the first simulation graphic 410 is located is the area defined by the outline of the first simulation graphic 410.
[0062] In this embodiment, the method of simulating the first graphic 210 according to the deviation zone Z1 to form the first simulated graphic 410 includes: forming a stepped boundary 411 based on the second boundary, wherein the minimum distance between each step in the stepped boundary 411 and the second boundary is below a first preset value; and replacing part of the boundary in the first graphic 210 corresponding to the first boundary with the stepped boundary 411 to form the first simulated graphic 410.
[0063] In this embodiment, each step of the stepped boundary 411 can be generated based on a preset generation rule.
[0064] For ease of understanding, Figure 11 The boundary of the first exposure pattern 310 in the deviation zone Z1 is indicated by a dashed line.
[0065] Please continue to refer to this. Figure 10 and Figure 11 In the first version 200, the area where the first simulation graphic 410 is located is designated as the critical area Z2.
[0066] In another embodiment, after forming the first simulated pattern and before using the area where the first simulated pattern is located as the key area, obtaining the key area based on the first exposure layout further includes:
[0067] Step S310: Fit the stepped boundary to form a fitted boundary;
[0068] Step S320: Determine whether the minimum distance between the fitted boundary and the second boundary is below the second preset value, wherein the second preset value is less than or equal to the first preset value;
[0069] When the minimum distance between the fitting boundary and the second boundary is below the second preset value, step S321 is executed to take the area where the first simulation graphic is located as the key area.
[0070] When the minimum distance between the fitted boundary and the second boundary is greater than the second preset value, the following steps are executed: Step S321, using the first simulation graphic as the previous first simulation graphic; and Step S322, based on the previous first simulation graphic, performing simulation processing on the first graphic again according to the deviation area to form a first simulation graphic in the first layout, wherein the first simulation graphic is different from the previous first simulation graphic.
[0071] In another embodiment, after forming the first simulated pattern and before using the area containing the first simulated pattern as the key area, obtaining the key area based on the first exposure layout further includes:
[0072] Step S3100: Fit the stepped boundary to form a fitted boundary;
[0073] Step S3200: Determine whether the fitted boundary coincides with the second boundary;
[0074] When the fitted boundary coincides with the second boundary, step S3210 is executed to take the area where the first simulation graphic is located as the key area.
[0075] When the fitted boundary does not coincide with the second boundary, the following steps are executed: Step S321, using the first simulation graphic as the previous first simulation graphic; and Step S322, based on the previous first simulation graphic, performing simulation processing on the first graphic again according to the deviation area, forming a first simulation graphic in the first layout, wherein the first simulation graphic is different from the previous first simulation graphic. Please refer to [reference needed]. Figure 12 Obtain the second version 500, which includes the second graphic 510.
[0076] The second layout 500 is used to form the layout of the current layer.
[0077] The current layer and the previous layer need to meet the design positional relationship in order to achieve the preset electrical connection and other functions.
[0078] Accordingly, the first graphic 210 is an associated graphic of the second graphic 510, so that the structural pattern in the current layer formed according to the second graphic 510 can meet the design position requirements with the structural pattern in the previous layer formed according to the first graphic 210.
[0079] In this embodiment, obtaining the second layout 500 includes: providing a second target layout (not shown); performing etching processing on the second target layout to obtain etching deviation data; and performing compensation processing on the second target layout based on the etching deviation data to form the second layout 500.
[0080] Etching can be simulated etching or an actual etching process performed on a wafer.
[0081] The second target map is used to form the target map of the current layer.
[0082] In this embodiment, the second target layout includes a second target pattern (not shown), and the method of compensating the second target layout according to etching deviation data to form the second layout 500 includes: offsetting the boundary of the second target pattern according to the etching deviation data to form the second pattern 510.
[0083] Next, based on the preset rules and the key area Z2, the second version 500 is iteratively modified to form the third version.
[0084] Specifically, based on preset rules and key area Z2, the second layout 500 is iteratively modified to form the third layout, including: determining whether the positional relationship between the second graphic 510 and the key area Z2 satisfies the preset rules.
[0085] In this embodiment, the preset rule includes: the second graphic 510 is located within the critical area Z2. That is, when the second graphic 510 is located within the critical area Z2, the positional relationship between the second graphic 510 and the critical area Z2 satisfies the preset rule; otherwise, it does not.
[0086] In other embodiments, the preset rule includes: the spacing between the boundary of the second graphic that extends beyond the critical area and the boundary of the critical area is below a third preset value.
[0087] Please refer to Figure 13 According to preset rules and the key area Z2, the second layout 500 is iteratively corrected to form the third layout. This also includes: when the positional relationship between the second graphic 510 and the key area Z2 satisfies preset rules, the second layout 500 (e.g., ...) is... Figure 12 (As shown in the image) is the third version.
[0088] Please refer to Figure 14 and Figure 15 According to the preset rules and the key area Z2, the second layout 500 is iteratively corrected to form the third layout. It also includes: when the positional relationship between the second graphic 510 and the key area Z2 does not meet the preset rules, the second layout 500 is corrected to form an intermediate third layout (not shown); and the intermediate third layout is used as the second layout to continue to perform judgment and correction processing until the preset conditions are met to form the third layout 600.
[0089] Since the critical area Z2 is obtained based on the first exposure pattern 300, the critical area Z2 is more consistent with the area corresponding to the actual front layer structure pattern than the first pattern 200. Therefore, by comparing the second graphic 510 with the critical area Z2, it can be determined whether the positional relationship between the second graphic 510 and the critical area Z2 meets the preset rules, which can improve the accuracy of the correction of the second graphic 510.
[0090] Specifically, the method for modifying the second version 500 to form the intermediate third version includes: offsetting the boundary of the second graphic 510 locally or globally.
[0091] In this embodiment, the intermediate third version is used as the second version, and the judgment and correction process is continued until the preset conditions are met to form the third version. This includes: using the intermediate third version as the second version, continuing the judgment and correction process until the number of iterations and corrections reaches a preset number, and using the intermediate third version formed when the iterations and corrections reach the preset number as the third version 600.
[0092] In other embodiments, the intermediate third version is used as the second version, and the judgment and correction process is continued until the preset conditions are met to form the third version. This includes: using the intermediate third version as the second version, continuing the judgment and correction process until the positional relationship between the second graphic and the key area meets the preset rules, and then using the second version as the third version.
[0093] It should be noted that, Figure 14 This is a schematic diagram from the second edition of Figure 500 before it was revised. Figure 15 This is a schematic diagram of the revised version 500 (i.e., a schematic diagram of the resulting third version 600), and Figure 15 The diagram only schematically illustrates the overall offset of the second figure 510. Furthermore, for ease of understanding, Figure 14 and Figure 15 The boundary of the critical region Z2 is schematically represented by dashed lines.
[0094] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.
Claims
1. An optical proximity correction method, characterized in that, include: A first layout is provided, which is a target layout for forming the previous layer. The first layout includes a first graphic, the outline of which has several sharp corners. The first image is subjected to exposure processing to form a first exposed image. The exposure processing is a simulation processing of simulated exposure. The first exposed image includes a first exposed image corresponding to the first image. Based on the first exposure layout, a key area is obtained, which includes: based on the first layout and the first exposure layout, obtaining the deviation area formed by the boundary of the first graphic and the boundary of the first exposure graphic; performing simulation processing on the first graphic according to the deviation area to form a first simulation graphic in the first layout; and taking the area where the first simulation graphic is located in the first layout as the key area. Obtain the second layout, which is used to form the layout of the current layer, and the second layout includes the second graphic; According to preset rules and the key area, the second layout is iteratively corrected to form a third layout. The preset rules include: the second graphic is located within the range of the key area, or the distance between the boundary of the second graphic outside the range of the key area and the boundary of the key area is below a third preset value.
2. The optical proximity correction method as described in claim 1, characterized in that, The deviation zone formed by the encirclement includes a first boundary corresponding to a portion of the boundary of the first pattern, and a second boundary corresponding to a portion of the boundary of the first exposed pattern. The step of simulating the first graphic based on the deviation area to form a first simulated graphic includes: forming a stepped boundary based on the second boundary, wherein the minimum distance between each step in the stepped boundary and the second boundary is below a first preset value; The first simulation graphic is formed by replacing a portion of the boundary corresponding to the first boundary in the first graphic with the stepped boundary.
3. The optical proximity correction method as described in claim 2, characterized in that, The step of obtaining the key area based on the first exposed layout also includes: After the first simulation graphic is formed, and before the area where the first simulation graphic is located is used as the key area, the stepped boundary is fitted to form a fitted boundary. Determine whether the minimum distance between the fitted boundary and the second boundary is below a second preset value, wherein the second preset value is less than or equal to the first preset value; When the minimum distance between the fitting boundary and the second boundary is below the second preset value, the area where the first simulation graphic is located is taken as the key area; When the minimum distance between the fitting boundary and the second boundary is greater than the second preset value, the first simulation graph is used as the previous first simulation graph; Based on the previous first simulation graphic, the first graphic is simulated again according to the deviation area to form a first simulation graphic in the first layout. The first simulation graphic is different from the previous first simulation graphic.
4. The optical proximity correction method as described in claim 2, characterized in that, The step of obtaining the key area based on the first exposed layout also includes: After the first simulation graphic is formed, and before the area where the first simulation graphic is located is used as the key area, the stepped boundary is fitted to form a fitted boundary. Determine whether the fitted boundary coincides with the second boundary; When the fitting boundary coincides with the second boundary, the region where the first simulation graphic is located is taken as the key region; When the fitting boundary does not coincide with the second boundary, the first simulation graph is used as the previous first simulation graph; Based on the previous first simulation graphic, the first graphic is simulated again according to the deviation area to form a first simulation graphic in the first layout. The first simulation graphic is different from the previous first simulation graphic.
5. The optical proximity correction method as described in claim 1, characterized in that, The step of iteratively revising the second map according to preset rules and the key area to form the third map includes: Based on preset rules and the key area, determine whether the positional relationship between the second graphic and the key area satisfies the preset rules; When the positional relationship between the second graphic and the key area does not meet the preset rules, the second graphic is corrected to form an intermediate third graphic. The intermediate third version is used as the second version, and the judgment and correction process continues until the preset conditions are met to form the third version.
6. The optical proximity correction method as described in claim 5, characterized in that, The step of iteratively correcting the second layout according to the preset rules and the key area to form the third layout further includes: when the positional relationship between the second graphic and the key area satisfies the preset rules, the second layout is used as the third layout.
7. The optical proximity correction method as described in claim 5, characterized in that, The step of using the intermediate third version as the second version and continuing to perform judgment and correction processing until the preset conditions are met to form the third version includes: using the intermediate third version as the second version and continuing to perform judgment and correction processing until the number of iterations and corrections reaches a preset number, and using the intermediate third version formed by the iterations and corrections at the preset number of times as the third version.
8. The optical proximity correction method as described in claim 5, characterized in that, The step of using the intermediate third map as the second map and continuing to make judgments and corrections until the preset conditions are met to form the third map includes: using the intermediate third map as the second map and continuing to make judgments and corrections until the positional relationship between the second graphic and the key area meets the preset rules, and then using the second map as the third map.
9. The optical proximity correction method as described in claim 1, characterized in that, The step of obtaining the second layout includes: providing a second target layout; performing etching processing on the second target layout to obtain etching deviation data; and performing compensation processing on the second target layout based on the etching deviation data to form the second layout.
10. The optical proximity correction method as described in claim 9, characterized in that, The second target layout includes a second target graphic; The step of compensating the second target pattern based on the etching deviation data to form the second pattern includes: offsetting the boundary of the second target pattern based on the etching deviation data to form the second pattern.