半导体封装结构及其制备方法
By forming a filler-free bottom dielectric layer on the front side of the semiconductor packaging structure and performing laser drilling, the problem of damage to metal pads by dielectric filler material is solved, thereby improving the electrical performance and yield of the packaging structure.
CN117672869BActive Publication Date: 2026-07-17CR RUNAN TECHNOLOGIES (CHONGQING) CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- CR RUNAN TECHNOLOGIES (CHONGQING) CO LTD
- Filing Date
- 2022-08-31
- Publication Date
- 2026-07-17
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Figure CN117672869B_ABST
Abstract
本发明提供了一种半导体封装结构及其制备方法，其中所述半导体封装结构的制备方法通过在半导体结构的正面形成无填料的底部介电层，能够在形成开口结构时，避免由于聚光效应造成的金属焊垫损伤，进而可以提高半导体封装结构的电学性能以及良率。
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