A preparation method of a heterojunction solar cell with a P-type tunneling structure

Abstract

The application relates to a preparation method of a heterojunction solar cell with a P-type tunneling structure, which comprises the following steps: step A, preparing a solar cell piece with an N-type heterojunction film layer formed on the front surface and a P-type tunneling structure film layer formed on the back surface; step B, forming an aluminum oxide film layer on the back surface of the solar cell piece; step C, performing local laser opening treatment on the aluminum oxide film layer to form an electric contact groove between the P-type tunneling structure film layer and the back surface transparent conductive film layer; and step D, forming a front surface transparent conductive film layer on the front surface of the solar cell piece and forming a back surface transparent conductive film layer on the back surface of the solar cell piece. The application aims to provide a preparation method of a heterojunction solar cell with a P-type tunneling structure, which can improve the electrical power loss caused by the carrier transmission on the back surface of the cell, improve the cell efficiency, and has high executability and mass productivity.

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