一种低温烧结低介电微波介质陶瓷材料及电子部件
The low-temperature sintering low-dielectric microwave dielectric ceramic material prepared by using Li2O-Al2O3-SiO2 microcrystalline glass and additives solves many of the performance deficiencies of dielectric ceramic materials in the prior art, and achieves the effects of low-temperature sintering, low dielectric constant and low coefficient of thermal expansion, which is suitable for LTCC process and integration with silicon chips.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHENZHEN SUNLORD ELECTRONICS
- Filing Date
- 2023-11-28
- Publication Date
- 2026-07-17
AI Technical Summary
Existing microwave dielectric ceramic materials cannot simultaneously meet the requirements of low-temperature sintering, low dielectric constant, low dielectric loss, and low coefficient of thermal expansion, making them unsuitable for use with single-crystal silicon chips. Furthermore, there are material compatibility issues in the LTCC process.
Using Li2O-Al2O3-SiO2 microcrystalline glass as the main component, and adding TiO2 and sintering aids such as B2O3, Bi2O3, Li2O, V2O5, and P2O5, the sintering temperature was controlled at 850-900℃ and the holding time was 1-2h, resulting in a low-temperature sintered low-dielectric microwave dielectric ceramic material with a β-lithium nepheline phase content higher than 50wt%.
It achieves dielectric constant K < 5, dielectric loss tanδ < 0.3%, and thermal expansion coefficient α: 2 ~ 5 ppm/℃ after low-temperature sintering. It is suitable for LTCC process, integrates and matches with silicon-based chips, has good co-firing bonding, and has no cracking or corrosion.
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Figure CN117682768B_ABST