Mip chip and display panel

Abstract

The application provides a MIP chip and a display panel. The MIP chip comprises a light shielding substrate, a flat layer, at least three light emitting chips, an adhesive layer, a transmission line, an insulating layer and a pad. The flat layer is located on one side of the light shielding substrate and internally spaced apart to embed the at least three light emitting chips; the adhesive layer is located between the flat layer and the light shielding substrate to fix the light emitting chips; the transmission line for conducting the light emitting chips is arranged on the side of the light emitting chips away from the light shielding substrate, and the insulating layer and the pad are arranged at the same time. The insulating layer is used to cover and protect the transmission line and the light emitting chips, and the pad is electrically connected with the transmission line. The light shielding substrate is provided with a plurality of light transmission holes, and the light transmission holes are arranged one by one corresponding to the light emitting chips, so that the light of the light emitting chips can pass through the light transmission holes and be emitted outward. The MIP chip of the application realizes the light correction of the light emitting chips through the arrangement of the light transmission holes and the light shielding substrate, so that the light type of the emitted light is straighter, and the color mixing phenomenon is relatively smaller.

Description

Technical Field

[0001] This invention relates to the field of display technology, and more particularly to a MIP chip and a display panel including the MIP chip. Background Technology

[0002] With societal development, higher PPI values ​​have become a pursuit in the display technology field, and micro light-emitting diodes (Micro LEDs) are the main method to achieve this goal. Among the developments of Micro LEDs, a technology that encapsulates multi-color light sources on a backplane to form a single micro-in-package (MIP) chip, and then mounts multiple MIP chips onto a display substrate, has become a solution to the repair and binning problems encountered in ordinary Micro LED display technologies—this is known as MIP (Micro LED in Package) technology.

[0003] In Micro LEDs using MIP technology, the light-emitting surface is on the back panel side. The back panel is usually made of transparent material, which causes the light patterns to be relatively dispersed when the various color light-emitting chips emit light, affecting the observation effect of the display panel. Summary of the Invention

[0004] In view of the shortcomings of the prior art, the purpose of this application is to provide a MIP chip that corrects light pattern and improves light purity, and a display panel including the MIP chip. Specifically, this application includes the following technical solutions: In a first aspect, embodiments of this application provide a MIP chip, comprising: light shielding substrate; A planarization layer is located on one side of the light-shielding substrate; At least three light-emitting chips are spaced apart and embedded in the planarization layer; An adhesive layer, located between the planarization layer and the light-shielding substrate, is used to fix each light-emitting chip; The transmission line is located on the side of the light-emitting chip away from the light-shielding substrate and is used to conduct electricity between the light-emitting chips. An insulating layer and pads are located on the side of the light-emitting chip away from the light-shielding substrate. The insulating layer is used to cover and protect the transmission line and the light-emitting chip. The pads are electrically connected to the transmission line and are exposed on the side of the insulating layer away from the light-shielding substrate. The light-shielding substrate has multiple light-transmitting holes, each corresponding to a light-emitting chip. The light emitted by each light-emitting chip is emitted outward through the light-transmitting hole.

[0005] This application's MIP chip features a planarization layer on one side of a light-shielding substrate, within which at least three light-emitting chips are embedded. An adhesive layer between the planarization layer and the light-shielding substrate secures the positions of the light-emitting chips. Transmission lines on the side of the light-emitting chips facing away from the light-shielding substrate connect the individual chips. An insulating layer and pads on the same side protect the transmission lines and the chips, allowing the pads to transmit electrical signals to the chips via the transmission lines, driving them to emit light. Furthermore, the MIP chip incorporates light-transmitting holes on the light-shielding substrate, each corresponding to a specific chip position, allowing light emitted from the chips to pass through these holes before exiting. These light-transmitting holes correct the light pattern emitted by the chips, preventing color mixing between different chips.

[0006] In one embodiment, the light-shielding substrate is made of glass or resin, and the color of the light-shielding substrate is black.

[0007] In this embodiment, a light-shielding substrate made of glass or resin is used to support and protect the light-emitting chip. Furthermore, by using a black light-shielding substrate, the light emitted by the light-emitting chip is absorbed, thereby correcting the light pattern and making it more direct. Simultaneously, the black light-shielding substrate prevents light interference between the individual light-emitting chips, eliminating color mixing issues and resulting in higher purity emitted light.

[0008] In one embodiment, the thickness of the light-shielding substrate is 50-500 μm.

[0009] In this embodiment, the thinner the light-shielding substrate, the worse the stability; conversely, the thicker the light-shielding substrate, the worse the product's practical performance. This application ensures the stability of the light-shielding substrate by setting a thickness of 50-500μm.

[0010] In one embodiment, the light-transmitting aperture includes a light-exit port and a light-in port. The light-in port is close to the adhesive layer, and the projection of the light-exit port on the adhesive layer is flush with the light-in port, or is contained within the light-in port.

[0011] In this embodiment, by setting a light-emitting port, and having the projection of the light-emitting port on the adhesive layer flush with or contained within the light-in port, the light emitted by the light-emitting chip through the light-emitting port is made straighter.

[0012] In one embodiment, the projection of the light-emitting chip onto the adhesive layer is housed within the light inlet.

[0013] In this embodiment, by providing a light inlet, the projection of the light-emitting chip on the adhesive layer is contained within the light inlet, allowing more light emitted by the light-emitting chip to enter the light inlet, thus improving the light-emitting effect of the MIP chip in this application.

[0014] In one embodiment, the adhesive layer includes multiple through-light-transmitting areas, each of which corresponds to a light-transmitting hole.

[0015] In this embodiment, by setting multiple light-transmitting areas that penetrate the adhesive layer, the light from the light-emitting chip can pass through the light-transmitting areas and enter the light-transmitting hole without being absorbed by the adhesive layer.

[0016] In one embodiment, the light-transmitting area includes a plurality of sub-holes, which are arranged at intervals within the light-transmitting area.

[0017] In this embodiment, by providing multiple sub-holes located in the light-transmitting area, the light emitted by the light-emitting chip can enter the light-transmitting hole through each sub-hole; and the spacing between each sub-hole can ensure the structural stability of the adhesive layer. Simultaneously, the spacing between each sub-hole also provides an adhesive base for the light-emitting chip, increasing the contact area between the light-emitting chip and the adhesive layer.

[0018] In one embodiment, the adhesive layer is black.

[0019] In this embodiment, by setting a black adhesive layer, the adhesive layer also has a certain light-shielding ability, thereby blocking the light from the spaced light-emitting chips and avoiding the formation of color mixing at the adhesive layer, so that the light emitted through the light-transmitting hole has higher purity.

[0020] In one embodiment, the MIP chip further includes a reflective layer located between the light-emitting chip and the insulating layer, the reflective layer being used to reflect the light emitted by the light-emitting chip.

[0021] In this embodiment, an emitting layer is provided between the light-emitting chip and the insulating layer to reflect the light emitted by the light-emitting chip that is away from the light-shielding substrate. The reflected light enters the light-passing hole after reflection, which can further increase the amount of light entering the light-passing hole, making the brightness of the MIP chip of this application higher.

[0022] In one embodiment, the reflective layer is arranged using a distributed Bragg reflector.

[0023] In this embodiment, a distributed Bragg reflector is used to arrange the reflective layer. Since the reflectivity of the distributed Bragg reflector can reach over 99%, less light is absorbed when it strikes the reflective layer, allowing more light to be reflected to the light-shielding substrate side and emitted, thus improving the brightness of the MIP chip in this application. Simultaneously, the reflective layer arranged using a distributed Bragg reflector has better resistance to pin forces.

[0024] Secondly, embodiments of this application provide a display panel, including a driving backplane and the MIP chip of this application, wherein the MIP chip is mounted on the driving backplane.

[0025] It is understandable that the display panel provided in the second aspect of this application, because it adopts the MIP chip provided in the first aspect of this application, also has the beneficial effects of a straighter light pattern and relatively less color mixing. Attached Figure Description

[0026] Figure 1 This is a schematic diagram of the display panel of this application; Figure 2 This is a planar schematic diagram of one side of the MIP chip in this application; Figure 3 This is a planar schematic diagram of the other side surface of the MIP chip in this application; Figure 4 This is a schematic diagram of the MIP chip structure of this application; Figure 5 This is a schematic diagram of light propagation in a local area of ​​the MIP chip in this application; Figure 6 This is a schematic diagram of the MIP chip structure in the prior art; Figure 7 This is a schematic diagram of light propagation in a MIP chip in the prior art.

[0027] Figure 8 This is a schematic diagram of the MIP chip structure in one embodiment of this application; Figure 9 This is a schematic diagram showing the projected shapes of the light inlet and light outlet in one embodiment of this application; Figure 10 This is a schematic diagram of the MIP chip structure in one embodiment of this application; Figure 11 This is a schematic diagram showing the distribution of sub-holes within the light-transmitting area in one embodiment of this application; Figure 12 This is a schematic diagram of partial light propagation in a MIP chip according to one embodiment of this application; Figure 13 This is a schematic diagram of the MIP chip structure in another embodiment of this application. Detailed Implementation

[0028] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings. Preferred embodiments of this application are shown in the drawings. However, this application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of the disclosure of this application.

[0029] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the specification of this application is for the purpose of describing particular embodiments only and is not intended to be limiting of this application.

[0030] The problem described in the existing solution is that in conventional MIP chips, the light-emitting surface is on the back panel, and the back panel is usually made of transparent material. This causes color mixing to occur on the back panel when each light-emitting chip emits light, which reduces the purity of the light emitted from the light-emitting surface. At the same time, the transparent material does not correct the scattered light, which in turn causes the light pattern emitted from the light-emitting surface to be dispersed, further affecting the display effect of the display panel.

[0031] The structure of the MIP chip and display panel in this application will be described in detail below with reference to the accompanying drawings.

[0032] Please see Figure 1 The diagram shown is a plan view of a display panel 200 provided in one embodiment of this application.

[0033] like Figure 1 As shown, the display panel 200 provided in this application includes a driving backplane 201 and a plurality of MIP chips 100. Each MIP chip 100 is mounted on the same outer surface of the driving backplane 201. The driving backplane 201 also includes a driving chip and a plurality of driving circuits (not shown in the figure). The driving chip is connected to each MIP chip 100 through each driving circuit and is electrically connected to the pads of each MIP chip 100. The driving chip provides driving signals to each MIP chip 100 through the driving circuits, causing each MIP chip 100 to emit light in its corresponding area, thereby realizing the display function of the entire display panel 200.

[0034] In this embodiment, multiple MIP chips 100 are arranged in an array on the driver backplane 201. In other embodiments, the arrangement of the MIP chips 100 may be different, and this application does not impose any particular limitation on this.

[0035] On the other hand, in order to clearly show the structure in the display panel 200, Figure 1The MIP chip 100 and the driving backplane 201 are described exemplarily only and do not represent the actual structure and shape of the display panel 200. That is, in other embodiments of the display panel 200 of this application, the shape and area of ​​the driving backplane 201 can be adjusted according to the actual scenario. At the same time, the shape, area, and arrangement spacing of each MIP chip 100 can also be adjusted accordingly. In actual display panel 200 products, the area of ​​each MIP chip 100 is usually small, and the arrangement density is usually higher.

[0036] Please see Figure 2 The diagram shown is a planar schematic of a MIP chip 100 provided in one embodiment of this application.

[0037] like Figure 2 As shown, in this embodiment, a single MIP chip 100 includes a light-shielding substrate 10 and a light-emitting chip 20. The number of light-emitting chips 20 is at least three. Figure 2 In the illustration, the three light-emitting chips 20 are respectively configured as red, green, and blue light-emitting chips, forming an "RGB" three-primary-color light-emitting chip structure. The three light-emitting chips 20 are arranged sequentially along the same direction on the same surface of the light-shielding substrate 10. It is understood that in other embodiments, the number, color, and arrangement of the light-emitting chips 20 can be arbitrarily set based on the specific application scenario of the product. The light-emitting chips 20 in the MIP chip 100 emit light of different colors and can mix colors to form a display effect.

[0038] Please see Figure 3 The diagram shown is a plan view of the other side surface of a MIP chip 100 provided in one embodiment of this application.

[0039] In this embodiment, the back of the three light-emitting chips 20 is also provided with pads 30 and transmission lines 40 (the structure of the insulating layer is omitted here for ease of description). There are four pads 30, including a first pad 30a, a second pad 30b, a third pad 30c, and a zero-position pad 30d. The first pad 30a, the second pad 30b, and the third pad 30c are respectively connected to the red, green, and blue light-emitting chips, specifically through the transmission lines 40. The zero-position pad 30d provides the basic zero position required for the operation of the three light-emitting chips 20. Since the zero-position pad 30d is simultaneously connected to all three light-emitting chips 20, it can be assumed that the zero positions of each light-emitting chip 20 are in an equipotential state.

[0040] The driving circuits on the driving backplane 201 are connected to four pads 30. The driving circuit connected to the zero pad 30d provides zero potential to the three light-emitting chips 20 simultaneously. The three driving circuits connected to the first pad 30a, the second pad 30b, and the third pad 30c respectively provide the driving voltage required for the red, green, and blue light-emitting chips, thereby controlling the display brightness of each light-emitting chip 20 to achieve the function of color mixing to form a display effect of the MIP chip 100 of this application.

[0041] Please see Figure 4 The diagram shown is a structural schematic of a MIP chip 100 provided in one embodiment of this application.

[0042] In this embodiment, the MIP chip 100 further includes an adhesive layer 50, a planarization layer 60, and an insulating layer 70. The planarization layer 60 is located on one side of the light-shielding substrate 10, wherein each light-emitting chip 20 is spaced apart and embedded within the planarization layer 60. The thickness of the planarization layer 60 can be set to be the same as the thickness of each light-emitting chip 20, so that each light-emitting chip 20 can be exposed from the side of the planarization layer 60 away from the light-shielding substrate 10, forming a relatively flat surface. The transmission line 40 is disposed on this relatively flat surface and is connected to each light-emitting chip 20 from the side of the light-shielding chip 20 away from the light-shielding substrate 10 to realize the transmission of driving signals.

[0043] An adhesive layer 50 is also provided between the light-emitting chip 20 and the light-shielding substrate 10. The adhesive layer 50 is used to fix each light-emitting chip 20 to the light-shielding substrate 10. It can be understood that the planarization layer 60 is also fixed to the light-shielding substrate 10 by the adhesive layer 50. That is, both the light-emitting chip 20 and the planarization layer 60 are fixed to the same outer surface of the light-shielding substrate 10 by the adhesive layer 50.

[0044] An insulating layer 70 is located on the side of the planarization layer 60 facing away from the light-shielding substrate 10. The insulating layer 70 simultaneously covers the transmission lines 40, the planarization layer 60, and each light-emitting chip 20. The insulating layer 70 protects the transmission lines 40 and each light-emitting chip 20, and ensures mutual insulation between the transmission lines 40. One end of the pad 30 is located within the insulating layer 70 and is conductive to the transmission line 40; the other end of the pad 30 protrudes from the side of the insulating layer 70 facing away from the light-shielding substrate 10. Thus, the pad 30 and the transmission line 40 are formed. Figure 3 The structure shown allows external driving signals to be transmitted to the light-emitting chip 20.

[0045] The light-shielding substrate 10 has a plurality of light-transmitting holes 11, which penetrate the light-shielding substrate 10 along its thickness direction. The number of light-transmitting holes 11 is equal to the number of light-emitting chips 20, and each light-transmitting hole 11 corresponds to the position of one light-emitting chip 20. Thus, the plurality of light-transmitting holes 11 are also arranged at intervals within the light-shielding substrate 10, and the light emitted by each light-emitting chip 20 can be emitted outward through the light-transmitting hole 11 corresponding to its position.

[0046] In the MIP chip 100 of this application, the light-shielding substrate 10 has light-shielding capability, that is, the light-shielding substrate 10 can block and / or absorb the light emitted by the light-emitting chip 20. The light-transmitting hole 11 penetrating through the light-shielding substrate 10 is used to allow light to pass through. Based on the above structure that each light-emitting chip 20 has a corresponding light-transmitting hole 11, the light emitted by each light-emitting chip 20 can be emitted outward through its corresponding light-transmitting hole 11.

[0047] Please see Figure 5 The diagram shown is a partial light pattern of a MIP chip 100 provided in one embodiment of this application.

[0048] In the MIP chip 100 of this application, the light emission angle of the light-emitting chip 20 is generally large, and it can emit light in any direction within the range of the light emission angle, that is, the light emitted by a single light-emitting chip 20 is relatively dispersed. The dispersed light includes a portion that can enter the light-transmitting hole 11, and the emission angle of this portion of light is relatively small; the other portion is projected onto the outer surface of the light-shielding substrate 10, and the emission angle of this portion of light is relatively large.

[0049] Because the light-shielding substrate 10 has light-shielding capabilities, the light projected onto the light-shielding substrate 10 (i.e., light with a relatively large emission angle) will be absorbed and / or blocked by the light-shielding substrate 10, thereby ensuring that the light projected outward by the light-emitting chip 20 only includes light such as... Figure 5 The light emitted from the chip has a relatively small emission angle. That is, the MIP chip 100 of this application, through the setting of the light-shielding substrate 10, the combination of the light-emitting chip 20 and the light-passing hole 11, makes the light emitted by the light-emitting chip 20 have a relatively small emission angle and a relatively straight light pattern.

[0050] Please see Figure 6 The diagram shows a structural schematic of a MIP chip 100' in the prior art.

[0051] The existing MIP chip 100' also includes a substrate 10', a light-emitting chip 20', a pad 30', a transmission line 40', an adhesive layer 50', a planarization layer 60', and an insulating layer 70'. The adhesive layer 50', the planarization layer 60', and the insulating layer 70' are sequentially stacked on one side of the substrate 10', the light-emitting chip 20' is embedded within the planarization layer 60', and the transmission line 40' and the pad 30' are used to transmit driving signals to the light-emitting chip 20'.

[0052] like Figure 7 As shown, the light emitted by the light-emitting chip 20' in the prior art MIP chip 100' also has a large emission angle. Furthermore, in the prior art MIP chip 100', its substrate 10' is typically made of a light-transmitting material, therefore the substrate 10' in the prior art MIP chip 100' does not have light-shielding capabilities. The light emitted by the light-emitting chip 20' has a relatively dispersed light pattern and can directly pass through the adhesive layer 50' and the substrate 10' before being emitted outwards.

[0053] Therefore, the light emitted by two adjacent light-emitting chips 20' will cause cross-color mixing within the light-transmitting substrate 10'. Alternatively, because the substrate 10' does not have light-shielding capabilities, some light will also cause cross-color mixing on the outside of the substrate 10' after passing through it, further affecting the purity of the emitted light.

[0054] The MIP chip 100 of this application, by employing a light-shielding substrate 10 and a light-passing hole 11, restricts the angle of emitted light, resulting in a relatively small light emission angle and a relatively straight light pattern emitted by the light-emitting chip 20. Therefore, the MIP chip 100 of this application can avoid cross-color mixing that may occur between two adjacent light-emitting chips 20 due to a large light emission angle, resulting in higher purity of the light emitted by the MIP chip 100 and thus improving the display effect of the display panel 200 of this application.

[0055] In one embodiment, the thickness of the light-shielding substrate 10 is between 50 and 500 μm. Because the light-shielding substrate 10 has light-transmitting holes 11, its structural strength is relatively weakened. Experiments conducted by the applicant have verified that when the light-shielding substrate 10 is too thin, its support and protection for the overall structure is weak. During use, this may lead to a decrease in the impact resistance of the light-shielding substrate 10 and damage to its internal structure.

[0056] When the light-shielding substrate 10 is too thick, the overall thickness of the MIP chip 100 increases, which is detrimental to the thinning of the display panel 200. At the same time, because the light-shielding substrate 10 has the ability to absorb and / or block light, when the light-shielding substrate 10 is too thick, the length of the light-transmitting hole 11 increases accordingly, which may cause a decrease in the brightness of the MIP chip 100 of this application.

[0057] Therefore, by setting the thickness of the light-shielding substrate 10 to be between 50-500μm, the thickness of the light-shielding substrate 10 can be controlled while ensuring the structural stability and display brightness of the light-shielding substrate 10, thereby controlling the overall thickness of the display panel 200 of this application.

[0058] In one embodiment, the light-shielding substrate 10 can be made of glass or resin. These materials are relatively inexpensive and easy to process for the light-passing holes 11.

[0059] In one embodiment, the light-shielding substrate 10 is black. The black light-shielding substrate 10 blocks and absorbs light, thus ensuring the light-shielding capability of the light-shielding substrate 10.

[0060] In one embodiment, please refer to Figure 8 The light-transmitting aperture 11 includes a light inlet 111 and a light outlet 112 along its length. The light inlet 111 is located on the side of the light-transmitting aperture 11 closer to the adhesive layer 50, and is close to the light-emitting chip 20. The light outlet 112 is located on the side of the light-shielding substrate 10 away from the light-emitting chip 20. The light emitted by the light-emitting chip 20 enters the light-transmitting aperture 11 through the light inlet 111, and then exits outward from the light-transmitting aperture 11 through the light outlet 112.

[0061] Please cooperate. Figure 9 In the illustrated embodiment, the projection of the light-emitting chip 20 onto the adhesive layer 50 is housed within the light inlet 111. Therefore, more light emitted by the light-emitting chip 20 toward the light-transmitting hole 11 can enter the light-transmitting hole 11 from the light inlet 111, thereby increasing the brightness of the MIP chip 100 of this application.

[0062] And in Figure 8 In the structure shown, the area of ​​the light inlet 111 is greater than or equal to the area of ​​the light outlet 112. That is, the projection of the light outlet 112 onto the adhesive layer 50 is contained within the light inlet 111, or the projection is flush with the light inlet 111. As a result, the light can be further corrected within the light passage 11 during its transmission from the light inlet 111 to the light outlet 112, so that the emission angle of the light emitted from the light outlet 112 is smaller and the light pattern is straighter.

[0063] The cross-sectional shapes of the light inlet 111 and the light outlet 112 along the thickness direction of the light-shielding substrate 10 can be configured as follows: Figure 8 The trapezoidal shape is shown. Part of the light entering the light-transmitting hole 11 from the light inlet 111 will be projected onto the inner wall of the light-transmitting hole 11. This part of the light may be blocked or absorbed by the light-shielding substrate 10, while the outgoing light, which is relatively small or described as relatively straight, can be projected outward from the light outlet 112.

[0064] In one embodiment, the projection shape of the light outlet 112 onto the adhesive layer 50 can be a polygonal shape such as a circle, ellipse, or rectangle; correspondingly, since the shape of the light inlet 111 is also a polygonal shape such as a circle, ellipse, or rectangle, and the shape of the light inlet 111 is the same as the shape of the light outlet 112 (e.g., ... Figure 9 (As shown).

[0065] Please see Figure 10 The diagram shown is a structural schematic of a MIP chip 100 provided in one embodiment of this application.

[0066] like Figure 10 As shown, the adhesive layer 50 has multiple light-transmitting areas 51, which extend through the adhesive layer 50 along its thickness. The number of light-transmitting areas 51 is the same as the number of light-transmitting holes 11, and each light-transmitting area 51 corresponds to one light-transmitting hole 11. The light emitted by the light-emitting chip 20 may be absorbed by the adhesive layer 50. By providing the light-transmitting areas 51, the light emitted by the light-emitting chip 20 can directly pass through the light-transmitting areas 51 and enter the light-transmitting hole 11 without being absorbed by the adhesive layer 50.

[0067] In one embodiment, the area of ​​the light-transmitting area 51 is smaller than the area of ​​the light-emitting chip 20. Therefore, the structure of the adhesive layer 50 at the edge of the light-transmitting area 51 can contact the light-emitting chip 20, thereby achieving an adhesive, fixed, and supportive effect on the light-emitting chip 20.

[0068] Please see Figure 11 The diagram shown is an arrangement of the neutron aperture 511 in the light-transmitting area 51 provided in one embodiment of this application.

[0069] like Figure 11 As shown, the light-transmitting area 51 includes multiple sub-holes 511, which are spaced apart within the adhesive layer 50 to form the structure of the light-transmitting area 51. A portion of the adhesive layer 50 is present between each sub-hole 511, which increases the bonding area between the adhesive layer 50 and the light-emitting chip 20, ensuring that the light-emitting chip 20 is well held within the light-transmitting area 51. The multiple sub-holes 511 within the adhesive layer 50 ensure the structural stability of the adhesive layer 50, and also allow light emitted from the light-emitting chip 20 to enter the light-passing hole 11.

[0070] In this embodiment, the projection shape of the sub-hole 511 on the light-emitting chip 20 is circular; in other embodiments, the projection shape of the sub-hole 511 on the light-emitting chip 20 can also be elliptical, rectangular or other polygonal shapes.

[0071] On the other hand, since the adhesive layer 50 can absorb the light emitted by the light-emitting chip 20, it weakens the light emitted by the light-emitting chip 20 through the adhesive layer 50. By providing multiple sub-holes 511, light can enter the light-transmitting hole 11 through the sub-holes 511, thus avoiding excessive light absorption by the adhesive layer 50.

[0072] In one embodiment, the adhesive layer 50 is black. The black adhesive layer 50 functions similarly to the light-shielding substrate 10. The black adhesive layer 50, together with the light-shielding substrate 10 and the light-transmitting hole 11, can better correct the light, resulting in a straighter light pattern and higher purity of the emitted light.

[0073] Please see Figure 12 The diagram shown is a partial light propagation schematic of a MIP chip 100 provided in one embodiment of this application.

[0074] Because of the partial adhesive layer 50 structure between each sub-hole 511, the black adhesive layer 50 can block and / or absorb light. The function of each sub-hole 511 is similar to that of the light-transmitting hole 11, which corrects the light emitted by the light-emitting chip 20. With the cooperation of the structure of the sub-hole 511 and the black adhesive layer 50 between each sub-hole 511, the light pattern of the light passing through the light-transmitting area 51 is straighter, and the exit angle of the light entering the light-transmitting hole 11 is smaller, thus ensuring the light pattern emitted outward from the light-transmitting hole 11.

[0075] Please see Figure 13 The diagram shown is a structural schematic of a MIP chip 100 provided in one embodiment of this application.

[0076] In this embodiment, the MIP chip 100 of this application further includes a reflective layer, which is disposed between the light-emitting chip 20 and the insulating layer 70. The reflective layer is used to reflect the light emitted by the light-emitting chip 20 toward the reflective layer. Part of the reflected light is blocked or absorbed by the light-shielding substrate 10, and part of it enters the light-transmitting hole 11.

[0077] In this embodiment, since the light-emitting chip 20 emits light as a whole, a portion of the light is emitted from the side of the light-emitting chip 20 closest to the light-shielding substrate 10, forming outgoing light rays that strike the light-transmitting hole 11; another portion of the light is emitted from the side of the light-emitting chip 20 away from the light-shielding substrate 10, striking the insulating layer 70. The reflective layer allows some of the light rays that are away from the light-shielding substrate 10 and strike the reflective layer to enter the light-transmitting hole 11 after reflection, increasing the brightness of the light entering the light-transmitting hole 11 and thus increasing the brightness of the light rays emitted outward through the light-transmitting hole 11.

[0078] Understandably, the brightness of the reflected light from the reflective layer is related to its reflectivity. In one embodiment, a distributed Bragg reflector is used to arrange the reflective layer of the MIP chip 100. This arrangement allows the reflectivity of the reflective layer to reach over 99%. Unlike other reflective layer arrangements, the distributed Bragg reflector increases the reflectivity of the reflective layer and reduces its absorption of light, resulting in less brightness loss of the reflected light. After the reflected light enters the light-transmitting aperture 11, it mixes with the light emitted directly from the light-emitting chip 20 and then, with the cooperation of the light-transmitting aperture 11 and the light-shielding substrate 10, is emitted outward from the light-transmitting aperture 11.

[0079] The reflective layer is arranged in a distributed Bragg reflector configuration, which on the one hand provides higher brightness for the MIP chip 100 of this application. On the other hand, the distributed Bragg reflector configuration also increases the anti-pin capability of the MIP chip 100 of this application.

[0080] It should be understood that the application of the present invention is not limited to the examples above. Those skilled in the art can make improvements or modifications based on the above description, and all such improvements and modifications should fall within the protection scope of the appended claims.

Claims

1. A MIP chip, characterized in that, include: A light-shielding substrate is used to block and / or absorb the light emitted by the light-emitting chip; A planarization layer is located on one side of the light-shielding substrate; At least three light-emitting chips are spaced apart and embedded in the planarization layer; An adhesive layer, located between the planarization layer and the light-shielding substrate, is used to fix each of the light-emitting chips; A transmission line is located on the side of the light-emitting chip away from the light-shielding substrate and is used to conduct electricity to each of the light-emitting chips; An insulating layer and pads are located on the side of the light-emitting chip away from the light-shielding substrate. The insulating layer is used to cover and protect the transmission line and the light-emitting chip. The pads are electrically connected to the transmission line and are exposed on the side of the insulating layer away from the light-shielding substrate. The light-shielding substrate is provided with a plurality of light-transmitting holes, each light-transmitting hole corresponding to one of the light-emitting chips. The light emitted by each light-emitting chip is emitted outward through the corresponding light-transmitting hole to correct the light pattern of the light emitted by each light-emitting chip.

2. The MIP chip according to claim 1, characterized in that, The light-shielding substrate is made of glass or resin, and the color of the light-shielding substrate is black.

3. The MIP chip according to claim 1, characterized in that, The light-transmitting hole includes a light-exit port and a light-in port. The light-in port is close to the adhesive layer. The projection of the light-exit port on the adhesive layer is flush with the light-in port, or is contained within the light-in port.

4. The MIP chip according to claim 3, characterized in that, The projection of the light-emitting chip on the adhesive layer is housed within the light inlet.

5. The MIP chip according to any one of claims 1-4, characterized in that, The adhesive layer includes multiple through-light-transmitting areas, each of which corresponds to a light-transmitting hole.

6. The MIP chip according to claim 5, characterized in that, The light-transmitting area includes multiple sub-holes, which are arranged at intervals within the light-transmitting area.

7. The MIP chip according to claim 5, characterized in that, The adhesive layer is black.

8. The MIP chip according to any one of claims 1-4, characterized in that, The MIP chip also includes a reflective layer located between the light-emitting chip and the insulating layer, which is used to reflect the light emitted by the light-emitting chip.

9. The MIP chip according to claim 8, characterized in that, The reflective layer is arranged using a distributed Bragg reflector method.

10. A display panel, characterized in that, It includes a driver backplane and a MIP chip as described in any one of claims 1-9, wherein the MIP chip is mounted on the driver backplane.

Images