Incident multi-section excitation medium film assisted vertical cavity laser

Abstract

The application discloses an incident type multi-section excitation medium film assisted vertical surface emitting laser, which comprises a substrate made of semiconductor material, a light gain unit and a filter unit, and is stacked in a staggered mode to form a multi-section structure, and the stacking direction is perpendicular to the substrate; a positive conductive layer; a medium HR high reflection film unit; a negative conductive layer; and a medium AR low reflection antireflection film. The medium HR film is used to replace the semiconductor DBR reflection filter, so that the problems of excessive thickness and cost of the DBR caused by the low refractive index difference of the InP device material are avoided, and the incident type laser structure is used in the optical aspect, the single DBR, long cavity, multi-section, narrow spectral line, light outlet transmission, high power scheme are used, and the problems of the double DBR, short cavity, single section, wide spectral line, light outlet reflection and low power of the traditional VCSEL F-P type laser structure are solved.

Description

Technical Field

[0001] This invention relates to the field of laser devices, and more particularly to a vertically emitting laser with a multi-section anti-reflection filter outer interface dielectric film. Background Technology

[0002] Currently, laser devices based on InP substrates suffer from poor filtering effects due to the small difference in optical refractive index of the material. As a result, the thickness of the DBR reflective layer produced is usually very large, leading to high costs.

[0003] Existing vertical cavity surface-emitting lasers typically use an FP laser cavity type consisting of two DBR mirrors, which has the following problems: 1) In order to select a single-cavity, single-segment, single-mode operating mode, the resonant cavity length must be very short, only about one wavelength thick, which limits the length of the optical gain range, requires the reflectivity of the emitter to be as high as 99%, and only about 1% of the optical power is output, which greatly suppresses the emitted light intensity; 2) The short resonant cavity also results in a wide spectrum and poor output light source quality. Summary of the Invention

[0004] Therefore, this invention provides an incident multi-section excitation dielectric film-assisted vertical-plane emitting laser, which differs from the traditional VCSEL dual-DBR mirror FP laser structure. It adopts an incident dielectric-assisted vertical-plane emitting laser structure, replacing the semiconductor DBR structure with an external high-efficiency dielectric HR high-reflectivity film. The gain of the light is effectively improved by increasing the volume and number of optical gain units inside the semiconductor structure. A semiconductor transmission filter layer is provided between the optical gain units, and the external light output port of the device is coated with a dielectric AR film for transmission filtering. The cost, light intensity, and monochromaticity of the laser are all significantly improved.

[0005] By adding multi-layer transmission semiconductor filter units and the positive feedback effect of mutual optical pumping between various gain units, narrow spectral line laser output and selection of working wavelength are effectively achieved. The light output efficiency is improved by low reflectivity and high transmittance. This effectively solves the problems of low output power, wide spectral line and poor performance caused by short resonant cavity, small optical gain and high reflectivity of DBR at the output end of traditional VCSEL, as well as the problems of low reflectivity and high cost of InP material.

[0006] This invention provides an incident multi-segment excitation dielectric film-assisted vertical-plane emitting laser, comprising: a substrate made of semiconductor material, the substrate having an optical output port and a dielectric AR low-reflection antireflection film deposited on the optical output port; a dielectric HR high-reflection film unit located on one side of the back surface of the substrate and disposed opposite to the substrate; a plurality of semiconductor laser gain units and a plurality of transmission semiconductor filter units grown on the substrate, disposed between the dielectric HR high-reflection film unit and the substrate, wherein the semiconductor laser gain units and the transmission semiconductor filter units are staggered to form a multi-segment structure, and the stacking direction is perpendicular to the substrate; wherein, each of the semiconductor laser gain units emits laser light when energized, the laser light propagating away from the dielectric HR high-reflection film unit passes through the plurality of transmission semiconductor filter units and is output, and the laser light propagating toward the dielectric HR high-reflection film unit is reflected by the dielectric HR high-reflection film unit and then passes through the plurality of transmission semiconductor filter units before being output.

[0007] Compared with existing technologies, the technical effects achieved by adopting this technical solution are as follows: The multi-section antireflection filter outer interface dielectric film vertical surface laser emitter differs from the two DBR high reflectivity short cavity working mode of traditional FP laser cavities. This invention adopts a light-incident laser working mode, with only one dielectric HR high reflectivity film unit used for reflection, and the rest being semiconductor laser gain units and transmission semiconductor filter units. Each semiconductor laser gain unit can emit laser light independently after being powered on. In the laser emitted towards the back of the substrate, monochromatic light corresponding to the wavelength of the transmission semiconductor filter unit can pass through the transmission semiconductor filter unit and be output to the back of the substrate; while in the laser emitted towards the dielectric HR high reflectivity film unit, monochromatic light corresponding to the wavelength of the dielectric HR high reflectivity film unit is reflected and then filtered by multiple transmission semiconductor filter units before being output. Therefore, both the transmission semiconductor filter unit and the dielectric HR high reflectivity film unit can select laser light of a specified wavelength, resulting in better monochromaticity of the output light; the dielectric HR high reflectivity film unit has the advantages of high reflectivity and low cost, and the dielectric HR high reflectivity film unit is located far from the substrate. On one side, it facilitates the growth of semiconductor materials; each of the semiconductor laser gain units can serve as the optical pump source for other semiconductor laser gain units, coherently exciting each other to improve the luminous efficiency of the laser; and, compared to the single-cavity, single-segment, single-mode operation of the FP laser cavity, the wavelength of the output light of the multi-segment antireflection filter outer interface dielectric film vertical surface emitting laser is determined by the transmission semiconductor filter unit and the dielectric HR high reflectivity film unit, rather than by the cavity length of the semiconductor laser gain unit. Therefore, the semiconductor laser gain unit has no thickness or cavity length limitation, and the optical gain region length can be increased to increase the optical gain. At the same time, the number of semiconductor laser gain units and the transmission semiconductor filter units can be increased to further improve the intensity of the output light; the dielectric HR high reflectivity film unit, the semiconductor laser gain unit, and the transmission semiconductor filter unit are vertically stacked on the substrate to output vertical light, which can effectively utilize the space on the substrate. Multiple vertical dielectric HR high reflectivity film units, semiconductor laser gain units, and transmission semiconductor filter units can also be set on the same substrate to achieve high-gain, high-power optical power output with multiple segments.

[0008] Furthermore, the wavelength of the output light from the vertical-plane laser emitted by the multi-section antireflection filter outer interface dielectric film is λ0; wherein, the dielectric HR high-reflection film unit has a multi-layer structure, with two adjacent layers forming a period, and the period thickness is [missing information]. And / or, the thickness of each layer of the dielectric HR high-reflectivity film unit is .

[0009] The technical effect achieved by adopting this technical solution is that the medium HR high reflectivity film unit can reflect monochromatic light with wavelength λ0 in the laser, so that the returned monochromatic light is filtered again by the multiple transmission semiconductor filter units, thereby improving the monochromaticity of the output light.

[0010] Furthermore, the center operating wavelength of the output light of the incident multi-segment excitation dielectric film assisted vertical plane laser is λ0; wherein, the dielectric HR high reflectivity film unit is a multilayer structure, with two adjacent layers forming one period, n representing the effective optical refractive index of two dielectric material layers forming one period, and the period thickness is... And / or, the thickness of each layer of the dielectric AR low-reflection transmission film unit is The high-reflectivity HR dielectric film unit is formed by alternating stacks of a first optical dielectric material layer and a second optical dielectric material layer with different refractive indices. The refractive index of the first optical dielectric material layer is n1, and the thickness of the first optical dielectric material layer is... The refractive index of the second optical medium material layer is n2, and the thickness of the second optical medium material layer is... .

[0011] The technical effects achieved by adopting this technical solution are as follows: The high reflectivity film unit of the medium HR is achieved by stacking the first optical medium material layer and the second optical medium material layer alternately to reflect and filter light in the entire beam area, reflecting monochromatic light with a wavelength of λ0. Compared with the partial grating area filtering of the edge-emitting distributed grating DFB laser, this reduces losses and increases efficiency.

[0012] Furthermore, the transmission semiconductor filter unit is formed by alternating stacking of a first semiconductor material layer and a second semiconductor material layer with different refractive indices.

[0013] The technical effects achieved by adopting this technical solution are as follows: The transmission semiconductor filter unit filters the entire beam area through the first optical medium material layer and the second optical medium material layer. Compared with the partial grating area filtering of the edge-emitting distributed grating DFB laser, it reduces losses and has higher efficiency; the multi-layered transmission semiconductor filter unit improves the spectral width and quality of the output light.

[0014] Furthermore, the transmission semiconductor filter unit has a multilayer structure, with two adjacent layers forming one cycle, n b If the effective refractive index represents one period of a two-layer semiconductor material structure, then the period thickness is... And / or, the refractive index of the first semiconductor material layer is n3, and the thickness of the first semiconductor material layer is... The refractive index of the second semiconductor material layer is n4, and the thickness of the second semiconductor material layer is... .

[0015] The technical effect achieved by adopting this technical solution is that the transmission semiconductor filter unit can pass monochromatic light with wavelength λ0 in the laser, ensuring the monochromaticity of the output light.

[0016] Furthermore, the plurality of transmission semiconductor filter units include P-type transmission semiconductor filter units and N-type transmission semiconductor filter units, which are arranged alternately.

[0017] The technical effects achieved by adopting this technical solution are as follows: regardless of whether the laser emitted along the direction away from the substrate or the laser reflected back by the high-reflectivity film unit of the medium HR, after passing through multiple semiconductor laser gain units, it can play a role in optical pumping and achieve an increase in light intensity and enhancement of monochromaticity.

[0018] Furthermore, the dielectric AR low-reflection transmission film unit replaces the semiconductor device transmission filter unit on the outer surface of the light output port; wherein, the dielectric AR low-reflection transmission film unit has a multilayer structure, with two adjacent layers forming one period, and n representing the effective refractive index of two dielectric material layers forming one period, then the period thickness is... And / or, the thickness of each layer of the dielectric AR low-reflection transmission film unit is The low-reflection transmission film unit is formed by alternating stacking of a first optical medium material layer and a second optical medium material layer with different refractive indices. The refractive index of the first optical medium material layer is n1, and the thickness of the first optical medium material layer is... The refractive index of the second optical medium material layer is n2, and the thickness of the second optical medium material layer is... Furthermore, the multi-section antireflection filter outer interface dielectric film vertical surface emitting laser also includes a first metal electrode, a second metal electrode, a power supply, a positive conductive layer, and a negative conductive layer; the first metal electrode is connected to the positive terminal of the power supply, and the second metal electrode is connected to the negative terminal of the power supply; wherein, the multi-section antireflection filter outer interface dielectric film vertical surface emitting laser, from top to bottom, consists of the first metal electrode, the dielectric HR high reflectance film unit, the positive conductive layer, the stacked semiconductor laser gain unit and the transmission semiconductor filter unit, the negative conductive layer, and the substrate.

[0019] Furthermore, the first metal electrode, the dielectric HR high-reflection film unit, the semiconductor laser gain unit, the transmission semiconductor filter unit, the second metal electrode, the dielectric AR low-reflection anti-reflection film, and the power supply connection structure include a direct structure, a parallel structure, or a series structure. The direct structure is as follows: only the positive electrode conductive layer is doped into a p+ type semiconductor and the negative electrode conductive layer is doped into an n+ type semiconductor, and they are respectively connected to the positive and negative electrodes of the power supply. The parallel structure is as follows: not only are the positive electrode conductive layer doped into a p+ type semiconductor and the negative electrode conductive layer doped into an n+ type semiconductor, but all the transmission semiconductor filter units are also doped, either into an n+ type semiconductor or a p+ type semiconductor. The positive terminal of the power supply is connected to all the p+ type transmission semiconductor filter units, and the negative terminal of the power supply is connected to all the n+ type transmission semiconductor filter units. The series structure is as follows: not only are the positive conductive layer doped into a p+ type semiconductor and the negative conductive layer doped into an n+ type semiconductor, but all the transmission semiconductor filter units between the positive and negative conductive layers are also doped, and the transmission semiconductor filter units are either doped into n+ type semiconductors or doped into p+ type semiconductors. The power supply is only connected to the first metal electrode and the second metal electrode.

[0020] The technical effects achieved by adopting this technical solution are as follows: the semiconductor laser gain unit and the transmission semiconductor filter unit form a section, and the sections mutually excite each other to improve the light efficiency; the P-type transmission semiconductor filter unit and the N-type transmission semiconductor filter unit are connected in parallel to the power supply, which can have sufficient excitation effect even under low voltage conditions; and the dielectric HR high reflectivity film unit, the semiconductor laser gain unit and the transmission semiconductor filter unit are connected in series, and the current flowing through them is the same; furthermore, each section formed by the semiconductor laser gain unit and the transmission semiconductor filter unit does not need to be connected to the positive and negative terminals of the power supply separately, thus simplifying the manufacturing process.

[0021] Furthermore, in the case where the substrate is an n-type semiconductor and in the case where the substrate is a p-type semiconductor, the doping methods of the remaining transmission semiconductor filter units between the dielectric HR high-reflection film unit and the dielectric AR low-reflection antireflection film are opposite.

[0022] The technical effects achieved by adopting this technical solution are as follows: when the substrate is an n-type semiconductor or a p-type semiconductor, the remaining transmission semiconductor filter units and the semiconductor laser gain units can be turned on to perform filtering and optical pumping functions, thereby realizing the series structure and the parallel structure.

[0023] In summary, the various embodiments of this application described above may have one or more of the following advantages or beneficial effects: i) The multi-section antireflection filter outer interface dielectric film vertical surface emitting laser differs from the two DBR high reflectivity short cavity working mode of the traditional FP laser cavity. The present invention adopts the light-incident laser working mode, with only one dielectric HR high reflectivity film unit used for reflection, and the rest are semiconductor laser gain units and transmission semiconductor filter units. Each of the semiconductor laser gain units can emit laser light independently after being powered on. In the laser light emitted towards the back of the substrate, the monochromatic light corresponding to the wavelength of the transmission semiconductor filter unit can pass through the transmission semiconductor filter unit and be output to the back of the substrate; while in the laser light emitted towards the dielectric HR high reflectivity film unit, the monochromatic light corresponding to the wavelength of the dielectric HR high reflectivity film unit is reflected and then filtered by multiple transmission semiconductor filter units before being output. Therefore, both the transmission semiconductor filter unit and the dielectric HR high reflectivity film unit can select laser light of a specified wavelength, resulting in better monochromaticity of the output light. ii) The dielectric HR high-reflectivity film unit has the advantages of high reflectivity and low cost. The dielectric HR high-reflectivity film unit is located on the side away from the substrate, which facilitates the growth of semiconductor materials. iii) Each of the semiconductor laser gain units can serve as the optical pump source for the other semiconductor laser gain units, coherently exciting each other to improve the luminous efficiency of the laser; iv) Compared to the single-cavity, single-segment, single-mode operation of the FP laser cavity, the wavelength of the output light of the vertical-plane emitting laser with the multi-segment antireflection filter outer interface dielectric film is determined by the transmission semiconductor filter unit and the dielectric HR high reflectivity film unit, rather than by the cavity length of the semiconductor laser gain unit. Therefore, the semiconductor laser gain unit has no thickness or cavity length limitation, and the optical gain can be increased by increasing the length of the optical gain region. At the same time, the number of gain units and transmission semiconductor filter units can be increased to further improve the intensity of the output light. v) The dielectric HR high-reflection film unit, the semiconductor laser gain unit, and the transmission semiconductor filter unit are vertically stacked on the substrate to output vertical light. This can effectively utilize the space on the substrate. Furthermore, multiple vertical semiconductor laser gain units and transmission semiconductor filter units can be set on the same substrate to achieve high-gain, high-power optical output with multiple units. Attached Figure Description

[0024] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0025] Figure 1 This is a schematic diagram of an incident multi-segment excitation dielectric film-assisted vertical surface emitting laser provided in an embodiment of the present invention.

[0026] Figure 2 for Figure 1 A magnified view of region I in the middle.

[0027] Figure 3 for Figure 1 Enlarged view of region II.

[0028] Figure 4 for Figure 1 A schematic diagram of the circuit structure of a vertically emitting laser from a multi-section anti-reflection filter outer interface dielectric film.

[0029] Figure 5 for Figure 1 A schematic diagram of another circuit structure for a vertically emitting laser from a multi-section anti-reflection filter outer interface dielectric film.

[0030] Figure 6 for Figure 1 Another schematic diagram of a vertically emitting laser from a multi-section anti-reflection filter outer interface dielectric film.

[0031] Explanation of key component symbols: 100 is a multi-section antireflection filter outer interface dielectric film vertical plane emitting laser; 110 is a substrate; 120 is a semiconductor laser gain unit; 130 is a transmission semiconductor filter unit; 131 is a first semiconductor material layer; 132 is a second semiconductor material layer; 140 is a dielectric HR high reflectance film unit; 141 is a first optical dielectric material layer; 142 is a second optical dielectric material layer; 150 is a first metal electrode; 151 is a positive conductive layer; 160 is a second metal electrode; 161 is a negative conductive layer; 170 is a dielectric AR low reflectance antireflection film. Detailed Implementation

[0032] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0033] See Figures 1-3This invention provides an incident multi-segment excitation dielectric film assisted vertical plane emitting laser 100, comprising: a substrate 110, which is made of semiconductor material, and has an optical output port and a dielectric AR low-reflection antireflection film 170 deposited on the optical output port; a dielectric HR high-reflection film unit 140, which is located on the back side of the substrate 110 and is disposed opposite to the substrate 110; and multiple semiconductor laser gain units 120 and multiple transmission semiconductor filter units 130, which are grown and disposed on the substrate 110 and on the dielectric HR high-reflection film. Between unit 140 and substrate 110, semiconductor laser gain unit 120 and transmission semiconductor filter unit 130 are stacked alternately to form a multi-section structure, and the stacking direction is perpendicular to substrate 110; wherein, each semiconductor laser gain unit 120 emits laser after being powered on, the laser propagating in the direction away from the dielectric HR high reflectivity film unit 140 passes through multiple transmission semiconductor filter units 130 and is output, and the laser propagating towards the dielectric HR high reflectivity film unit 140 is reflected by the dielectric HR high reflectivity film unit 140 and then passes through multiple transmission semiconductor filter units 130 before being output.

[0034] In this embodiment, the incident multi-section excitation dielectric film-assisted direct-emission laser 100 differs from the traditional FP laser cavity's two DBR high-reflectivity short-cavity operating mode. This invention employs a light-incident laser operating mode, with only one dielectric HR high-reflectivity film unit 140 for reflection; the rest are semiconductor laser gain units 120 and transmission semiconductor filter units 130. Each semiconductor laser gain unit 120 emits laser light after being energized. For a single path of direct-emission light, the propagation direction is towards the bottom surface of the substrate 110. The light first passes through the transmission semiconductor filter unit 130 to transmit monochromatic transmitted light. This monochromatic transmitted laser then propagates to the next semiconductor laser gain unit 120, acting like a light pump source to excite the next semiconductor laser gain unit. The process of transmitting the laser in this manner, from element 120 to element 120, improves the monochromaticity of the transmitted laser. Finally, the laser is filtered by the dielectric AR low-reflection anti-reflection film 170 before being output. For the other path of detour-reflection laser, the initial propagation direction is away from the substrate 110. Therefore, the longer path of the laser not only requires multiple passes through the transmission semiconductor filter unit 130 and more pumping and excitation of the semiconductor laser gain unit 120 during propagation, but also requires strong reflective filtering by the dielectric HR high-reflection film unit 140. As a result, the monochromaticity of the laser propagating in this path is better. Finally, the two paths of direct transmission and the light reflected from the dielectric HR high-reflection film unit 140 converge at the output end and are emitted towards the bottom of the substrate 110 through the dielectric AR low-reflection anti-reflection film 170. This is also known as dielectric-assisted back-side emission.

[0035] Among them, the dielectric HR high reflectivity film unit 140 has the advantages of high reflectivity and low cost. The dielectric HR high reflectivity film unit 140 is located on the side away from the substrate, which facilitates the growth of semiconductor materials. Furthermore, compared to the single-cavity, single-segment, single-mode operation of the FP laser cavity, the wavelength of the output light from the multi-segment antireflection filter external interface dielectric film vertical surface emitting laser 100 is determined by the transmission semiconductor filter unit 130 and the dielectric HR high reflectivity film unit 140, rather than by the cavity length of the semiconductor laser gain unit 120. Therefore, the semiconductor laser gain unit 120 has no thickness or cavity length limitations, and the optical gain region length can be increased to increase the optical gain. At the same time, the number of semiconductor laser gain units 120 and transmission semiconductor filter units 130 can be increased to further improve the intensity of the output light. The dielectric HR high reflectivity film unit 140, semiconductor laser gain unit 120, and transmission semiconductor filter unit 130 are vertically stacked on the substrate 110 to output vertical light, which can effectively utilize the space on the substrate 110. Multiple vertical dielectric HR high reflectivity film units 140, semiconductor laser gain units 120, and transmission semiconductor filter units 130 can also be set on the same substrate 110 to achieve high gain and high power output of multiple segments.

[0036] Furthermore, compared to edge-emitting distributed grating DFB lasers, this method eliminates the need for gratings, secondary epitaxial growth of semiconductor materials, and the elimination of anti-reflection treatment at the emitter and polishing and coating at the AR end, significantly simplifying the process and reducing costs. The semiconductor laser gain unit 120 and the transmission semiconductor filter unit 130 are stacked alternately, avoiding phase shifts caused by significant errors from mechanical cutting.

[0037] Preferably, the number of semiconductor laser gain units 120 and transmission semiconductor filter units 130 is at least 2 layers, such as 4 layers or 8 layers, which is not limited here.

[0038] In one specific embodiment, the wavelength of the output light from the incident multi-segment excitation dielectric film assisted vertical surface emitting laser 100 is λ0; wherein, the dielectric HR high reflectivity film unit 140 has a multilayer structure, with two adjacent layers forming one period, and the period thickness is [missing information]. And / or, the thickness of each layer of the dielectric HR high-reflectivity film unit 140 is The dielectric HR high-reflectivity film unit 140 can reflect monochromatic light with wavelength λ0 in the laser, so that the returned monochromatic light is filtered again by multiple transmission semiconductor filter units 130, thereby improving the monochromaticity of the output light.

[0039] In one specific embodiment, the dielectric HR high-reflectivity film unit 140 is formed by alternating stacking of a first optical dielectric material layer 141 and a second optical dielectric material layer 142 with different refractive indices. The refractive index of the first optical dielectric material layer 141 is n1, and the thickness of the first optical dielectric material layer 141 is... The refractive index of the second optical medium material layer 142 is n2, and the thickness of the second optical medium material layer 142 is... The dielectric HR high-reflectivity film unit 140 filters light across the entire beam region by staggered stacking of the first optical dielectric material layer 141 and the second optical dielectric material layer 142, reflecting monochromatic light with a wavelength of λ0. Compared with the partial grating region filtering of the edge-emitting distributed grating DFB laser, this reduces losses and increases efficiency.

[0040] In one specific embodiment, the transmission semiconductor filter unit 130 is formed by alternating stacking of a first optical medium material layer 141 and a second optical medium material layer 142 with different refractive indices. The transmission semiconductor filter unit 130 filters the entire beam region through the first optical medium material layer 141 and the second optical medium material layer 142, reducing losses and increasing efficiency compared to partial grating region filtering in an edge-emitting distributed grating DFB laser. The multi-layered transmission semiconductor filter unit 130 improves the spectral width and quality of the output light.

[0041] In one specific embodiment, the transmission semiconductor filter unit 130 has a multilayer structure, with two adjacent layers forming a period, and the period thickness being [missing information]. The refractive index of the first semiconductor material layer 131 is n3, and the thickness of the first semiconductor material layer 131 is... The refractive index of the second semiconductor material layer 142 is n4, and the thickness of the second semiconductor material layer 142 is... The transmission semiconductor filter unit 130 can pass monochromatic light with wavelength λ0 in the laser, ensuring the monochromaticity of the output light.

[0042] In one specific embodiment, the plurality of transmission semiconductor filter units 130 include P-type transmission semiconductor filter units and N-type transmission semiconductor filter units, which are arranged alternately. Whether the laser emitted along a direction away from the substrate 110 or the laser reflected back by the dielectric HR high-reflectivity film unit 140, after passing through the plurality of semiconductor laser gain units 120, it can perform an optical pumping function, thereby increasing the light intensity and enhancing monochromaticity.

[0043] In one specific embodiment, the dielectric AR low-reflection transmission film unit 170 replaces the semiconductor device transmission filter unit on the outer surface of the light output port; wherein, the dielectric AR low-reflection transmission film unit 170 has a multilayer structure, with two adjacent layers forming one period, and denoted by n representing the effective refractive index of two dielectric material layers forming one period, then the period thickness is... And / or, the thickness of each layer of the dielectric AR low-reflection transmission film unit 170 is The dielectric AR low-reflection transmission film unit 170 is formed by alternating stacking of a first optical dielectric material layer 141 and a second optical dielectric material layer 142 with different refractive indices. The refractive index of the first optical dielectric material layer 141 is n1, and the thickness of the first optical dielectric material layer 141 is... The refractive index of the second optical medium material layer 142 is n2, and the thickness of the second optical medium material layer 142 is... .

[0044] In one specific embodiment, the multi-section antireflection filter outer interface dielectric film vertical surface emitting laser 100 further includes a first metal electrode 150, a second metal electrode 160, and a power supply. The first metal electrode 150 is connected to the positive terminal of the power supply, and the second metal electrode 160 is connected to the negative terminal of the power supply.

[0045] Preferably, the multi-section anti-reflection filter outer interface dielectric film vertical surface emitting laser 100 further includes: a positive electrode conductive layer 151 and a negative electrode conductive layer 161, wherein the positive electrode conductive layer 151 can be doped to form a p+ type semiconductor and the negative electrode conductive layer 161 can be doped to form an n+ type semiconductor.

[0046] The multi-section antireflection filter outer interface dielectric film vertical surface emitting laser 100 consists of, from top to bottom, a first metal electrode 150, a dielectric HR high reflectivity film unit 140, a positive electrode conductive layer 151, a stacked semiconductor laser gain unit 120 and a transmission semiconductor filter unit 130, a negative electrode conductive layer 161, and a substrate 110.

[0047] Preferably, the negative electrode conductive layer 161 is disposed on the surface of the substrate 110; the first metal electrode 150 covers the top and periphery of the dielectric HR high reflectivity film unit 140; the bottom of the first metal electrode 150 extends to the negative electrode conductive layer 161 and extends outward in a direction away from the side of the dielectric HR high reflectivity film unit 140 to form a positive electrode fixed end.

[0048] Preferably, the substrate 110 can be an n-type semiconductor.

[0049] Preferably, the connection structure between the first metal electrode 150, the dielectric HR high-reflection film unit 140, the semiconductor laser gain unit 120, the transmission semiconductor filter unit 130, the second metal electrode 160, the dielectric AR low-reflection anti-reflection film 170, and the power supply includes a direct structure, a parallel structure, or a series structure.

[0050] Among them, see Figure 1 The direct structure is as follows: only the positive electrode conductive layer 151 is doped into a p+ type semiconductor, and the negative electrode conductive layer 161 is doped into an n+ type semiconductor, and they are respectively connected to the positive and negative terminals of the power supply.

[0051] Among them, see Figure 4The parallel structure is as follows: not only is the positive conductive layer 151 doped into a p+ type semiconductor and the negative conductive layer 161 doped into an n+ type semiconductor, but all the transmission semiconductor filter units 130 are also doped. The transmission semiconductor filter units 130 can be doped into n+ type semiconductors or p+ type semiconductors. The doping order depends on the substrate doping type. Starting from the opposite type of substrate doping polarity, the doping proceeds alternately with the opposite polarities of p+-n+-p+-n+-p+, forming a superimposed structure up to the last transmission semiconductor filter unit 130 at the top. The positive power supply is connected to all the p+ type transmission semiconductor filter units 130, and the negative power supply is connected to all the n+ type transmission semiconductor filter units 130. This structure is suitable for applications with equal current.

[0052] Among them, see Figure 5 The series structure is as follows: not only is the positive conductive layer 151 doped into a p+ type semiconductor and the negative conductive layer 161 doped into an n+ type semiconductor, but all the transmission semiconductor filter units 130 between the positive conductive layer 151 and the negative conductive layer 161 are also doped. The transmission semiconductor filter units 130 can be doped into n+ type semiconductors or p+ type semiconductors. The doping order depends on the substrate doping type. Starting from the opposite type of substrate doping polarity, the doping is carried out in an alternating manner of p+-n+-p+-n+-p+ polarity, forming a superimposed structure up to the last transmission semiconductor filter unit 130 at the top. The p+ and n+ layers are connected end to end in series. The power supply is only connected to the first metal electrode 150 at the top and the second metal electrode 160 at the bottom, which is suitable for low voltage applications.

[0053] Preferably, a circular opening is formed in the center of the substrate 110 for outputting laser light. This circular opening is smaller than the semiconductor laser gain unit 120 and the transmission semiconductor filter unit 130.

[0054] In another specific embodiment, the doping methods of the remaining transmission semiconductor filter units 130 between the dielectric HR high-reflectance film unit 140 and the dielectric AR low-reflectance antireflection film 170 are opposite, enabling the remaining transmission semiconductor filter units 130 and the semiconductor laser gain unit 120 to conduct, performing filtering and optical pumping functions, thus realizing a series structure and a parallel structure. For example, when the substrate 110 is an n-type semiconductor, the doping method of the transmission semiconductor filter unit 130 is pnpn, and when the substrate 110 is a p-type semiconductor, the doping method of the transmission semiconductor filter unit 130 is npnp.

[0055] In another specific embodiment, see Figure 6The positions of the dielectric AR low-reflection antireflection film 170 and the dielectric HR high-reflection film unit 140 can be interchanged. In this case, the dielectric HR high-reflection film unit 140 is disposed on the substrate 110, while the dielectric AR low-reflection antireflection film 170 is located at the top away from the substrate. When each semiconductor laser gain unit 120 is energized and emits light, for a direct-transmitted light beam, the propagation direction of the laser is away from the bottom surface of the substrate 110. The light first passes through the transmission semiconductor filter unit 130 to filter and transmit as monochromatic light. This monochromatic transmitted laser then propagates to the next semiconductor laser gain unit 120, which acts like a light pump source to excite the next semiconductor laser gain unit 120. This process continues, making the monochromaticity of the transmitted laser increasingly better, and finally, it passes through the dielectric AR low-reflection antireflection film 170 for final filtering before being output. For another... One path of reflective laser propagates initially towards the substrate 110. Therefore, the longer path of the light not only requires multiple passes through the transmission semiconductor filter unit 130 and additional pumping and excitation of the semiconductor laser gain unit 120 during propagation, but also requires strong reflective filtering through the dielectric HR high-reflectivity film unit 140. As a result, the monochromaticity of the laser propagating in this path is better. Finally, the light from the two direct transmission paths and the light reflected back from the dielectric HR high-reflectivity film unit 140 converges at the light output end and is emitted outward through the dielectric AR low-reflectivity anti-reflection film 170, also known as dielectric-assisted front emission.

[0056] Preferably, a circular opening is formed in the middle of the first metal electrode 150 for outputting laser light.

[0057] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. An incident multi-segment excitation dielectric film assisted vertical plane emitting laser, characterized in that, include: The substrate is made of semiconductor material and has an optical output port and a dielectric AR low-reflection anti-reflection film deposited on the optical output port; A dielectric HR high-reflection film unit is located on one side of the back surface of the substrate and is disposed opposite to the substrate. Multiple semiconductor laser gain units and multiple transmission semiconductor filter units are grown and disposed on the substrate, between the dielectric HR high reflectivity film unit and the substrate, and the semiconductor laser gain units and the transmission semiconductor filter units are stacked alternately to form a multi-section structure, with the stacking direction perpendicular to the substrate; Each of the semiconductor laser gain units emits laser light after being powered on. One type of laser light propagating in a direction away from the high-reflectivity HR medium unit passes through multiple transmission semiconductor filter units and the AR medium before being output at the optical output port. Another type of laser light propagating towards the high-reflectivity HR medium unit is reflected by the high-reflectivity HR medium unit, and then passes through multiple transmission semiconductor filter units before being output at the same optical output port. It also includes: a first metal electrode, a second metal electrode, a positive conductive layer, and a negative conductive layer; the first metal electrode is connected to the positive terminal of the power supply, and the second metal electrode is connected to the negative terminal of the power supply; wherein, the incident multi-section excitation dielectric film assisted vertical plane emitting laser, from top to bottom, consists of the first metal electrode, the dielectric HR high reflectivity film unit, the positive conductive layer, the stacked semiconductor laser gain unit and the transmission semiconductor filter unit, the negative conductive layer, the substrate, the dielectric AR antireflection film unit, and a light output hole drilled on the back of the substrate to reduce light absorption loss; The connection structure of the dielectric HR high-reflection film unit, the semiconductor laser gain unit, the semiconductor transmission filter unit, the dielectric AR low-reflection anti-reflection film, and the power supply includes a direct structure, a parallel structure, or a series structure. The transmission semiconductor filter unit has a multi-layer structure, with two adjacent layers forming one cycle, denoted by n. b If the effective refractive index represents one period of a two-layer semiconductor material structure, then the period thickness is... .

2. The incident multi-segment excitation dielectric film assisted vertical plane emitting laser according to claim 1, characterized in that, The thickness of each layer of the dielectric AR low-reflection transmission film unit is The high-reflectivity HR dielectric film unit is formed by alternating stacks of a first optical dielectric material layer and a second optical dielectric material layer with different refractive indices. The refractive index of the first optical dielectric material layer is n1, and the thickness of the first optical dielectric material layer is... The refractive index of the second optical medium material layer is n2, and the thickness of the second optical medium material layer is... .

3. The incident multi-segment excitation dielectric film assisted vertical plane emitting laser according to claim 2, characterized in that, The transmission semiconductor filter unit is formed by alternating stacking of a first semiconductor material layer and a second semiconductor material layer with different refractive indices.

4. The incident multi-segment excitation dielectric film assisted vertical plane emitting laser according to claim 3, characterized in that, The refractive index of the first semiconductor material layer is n3, and the thickness of the first semiconductor material layer is... The refractive index of the second semiconductor material layer is n4, and the thickness of the second semiconductor material layer is... .

5. The incident multi-segment excitation dielectric film assisted vertical plane emitting laser according to claim 1, characterized in that, The plurality of the transmission semiconductor filter units include P-type transmission semiconductor filter units and N-type transmission semiconductor filter units, which are arranged alternately.

6. The incident multi-segment excitation dielectric film assisted vertical plane emitting laser according to claim 1 or 3, characterized in that, The dielectric AR low-reflection transmission film unit replaces the semiconductor device transmission filter unit on the outer surface of the light output port; wherein, the dielectric AR low-reflection transmission film unit has a multilayer structure, with two adjacent layers forming one period, where n represents the effective refractive index of two dielectric material layers forming one period, and the period thickness is... And / or, the thickness of each layer of the dielectric AR low-reflection transmission film unit is The low-reflection transmission film unit is formed by alternating stacking of a first optical medium material layer and a second optical medium material layer with different refractive indices. The refractive index of the first optical medium material layer is n1, and the thickness of the first optical medium material layer is... The refractive index of the second optical medium material layer is n2, and the thickness of the second optical medium material layer is... .

7. The incident multi-segment excitation dielectric film assisted vertical plane emitting laser according to claim 5, characterized in that, When the substrate is an n-type semiconductor and when the substrate is a p-type semiconductor with different doping polarities, the doping methods of the transmission semiconductor filter unit are opposite, the doping methods of the top and bottom n+ and p+ conductive layers are opposite, and the polarity connection of the power supply electrode is opposite.

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