基于量子点同质梯度结的光电探测器及其制备方法
By fabricating a photodetector based on a PIN homogeneous gradient junction and utilizing liquid-phase and solid-state ligand exchange methods, the problems of lattice mismatch and high-temperature performance degradation in traditional mid-wave infrared photodetectors were solved, achieving high carrier mobility and good performance at room temperature.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- BEIJING INST OF TECH
- Filing Date
- 2022-09-02
- Publication Date
- 2026-07-17
AI Technical Summary
Traditional mid-wave infrared photodetectors are complex and costly to fabricate. Lattice mismatch and interface transport problems in heterojunctions lead to low photocurrent and rapid performance degradation at high temperatures. Traditional synthesis methods result in low mobility and responsivity.
By employing a mixed-phase ligand exchange method involving liquid-phase ligand exchange and solid-phase ligand exchange, strong N-type, weak N-type, intrinsic N-type, weak P-type, and strong P-type mercury telluride colloidal quantum dots are prepared and stacked in the vertical direction to form a PIN homogeneous gradient junction. This avoids lattice mismatch and interface transport problems, thereby improving carrier mobility and stabilizing the Fermi level.
It improves photocurrent collection capability, maintains good high-temperature performance, and realizes high-performance mid-wave photovoltaic infrared detection at room temperature.
Smart Images
Figure CN117693265B_ABST