一种小型化高频四边无引线陶瓷外壳及其加工工艺

By optimizing the high-frequency CQFN housing through a hanging hole structure and a secondary lamination process, the conflict between miniaturization and high-performance transmission is resolved. This enables the non-planar transmission of high-frequency signals in a miniaturized ceramic housing and low-cost processing, ensuring excellent signal transmission performance.

CN117715338BActive Publication Date: 2026-07-17NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
Filing Date
2023-12-12
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

Existing high-frequency four-sided leadless ceramic housings (CQFNs) suffer from problems such as large space occupation due to coaxial structure, large parasitic inductance, large processing error and poor signal transmission performance during miniaturization. Especially when the frequency band reaches Ku and above, it is difficult to achieve both miniaturization and high performance.

Method used

A hanging hole structure is adopted to replace the coaxial structure. Combined with the secondary stacking semi-finished product process, a coplanar waveguide structure and compensation capacitor are designed to optimize impedance matching. Shielding holes are set to realize high-frequency signal heterogeneous transmission, and the bonding strength is improved by electroplating gold.

Benefits of technology

It achieves high-frequency signal transmission in a 1.5mm×1.5mm cavity with a 3mm×3mm outer dimension, reduces the signal transmission channel area, reduces processing errors, ensures signal transmission performance and low cost of packaging components, and supports backward compatibility of frequency bands.

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Abstract

本发明公开了一种小型化高频四边无引线陶瓷外壳及其加工工艺,通过将实现异面传输的类同轴结构更改为挂孔结构,并对信号通道进行阻抗匹配和信号屏蔽,可实现30GHz高频信号传输的同时大幅减小异面传输所占用的面积;当陶瓷外壳达到3mm×3mm及以下尺寸时,传统的HTCC工艺加工所引入的误差会对陶瓷外壳的射频性能造成严重的影响,本发明采用二次叠片的半成品工艺,能够有效解决叠片偏差等工艺误差所造成的传输线不连续问题,从减少阻抗不连续点和增强信号屏蔽两方面提升陶瓷外壳的射频信号传输性能。陶瓷外壳的支持频段可向下兼容,可支撑小尺寸、大腔体、高频段、低成本的芯片封装需求。
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