Target processing apparatus and target processing method

Abstract

A target processing method includes moving a target into a processing chamber, forming a film including carbon on the target using at least one of a first ion including carbon and a first plasma including carbon, and removing the film by a reaction between a second plasma and the film, wherein the forming of the film and the removing of the film are alternately performed multiple times in the processing chamber without removing the target from the processing chamber.

Description

[0001] Cross-references to related applications

[0002] This application is based on and claims the priority benefit of Japanese Patent Application No. 2022-148547, filed on September 16, 2022, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The embodiments described herein generally relate to target processing devices and target processing methods. Background Technology

[0004] In recent years, techniques for processing the surface of a target using a target processing device (e.g., a target substrate device) have become known. Summary of the Invention

[0005] The embodiments provide a technique for reducing the surface roughness of a target.

[0006] One embodiment provides a target processing method, including:

[0007] The target was moved into the processing chamber;

[0008] A carbon-containing film is formed on the target using at least one of a first ion containing carbon and a first plasma containing carbon; and

[0009] The membrane is removed by the reaction between the second plasma and the membrane.

[0010] In this process, membrane formation and membrane removal are performed alternately multiple times within the processing chamber without removing the target from the processing chamber.

[0011] One embodiment provides a target processing device, including:

[0012] Processing room;

[0013] The first supply source is configured to supply at least one of a first ion comprising carbon or a first gas comprising carbon.

[0014] The second supply source is configured to generate a second plasma from a second gas;

[0015] A conveying unit configured to transport the target to a processing chamber; and

[0016] A control device configured to alternately perform a first operation and a second operation multiple times while controlling a first supply source and a second supply source and without removing the target from the processing chamber. In the first operation, at least one of a first ion and a first plasma generated by a first gas is used to form a carbon-containing film on the target disposed in the processing chamber. In the second operation, the film is removed by a chemical reaction between the second plasma and the film.

[0017] Furthermore, one embodiment provides a method for processing a photomask or template, comprising:

[0018] The target to be processed is transferred to the processing room and placed on the table;

[0019] Perform a first operation on a processing target placed on a stage, the first operation including supplying at least one of a first ion comprising carbon or a first gas comprising carbon, and forming a carbon-component film on the processing target using at least one of the first ion and a first plasma generated by the first gas.

[0020] Perform a second operation on the target being processed placed on the stage, the second operation including generating a second plasma from a second gas and removing the membrane by a chemical reaction between the second plasma and the membrane; and

[0021] Repeat the first and second operations multiple times without removing the target from the processing chamber. Attached Figure Description

[0022] Figure 1 This is a schematic diagram illustrating an example of a target processing method;

[0023] Figure 2 This is a perspective diagram illustrating a structural example of a template;

[0024] Figure 3 This is a cross-sectional view illustrating a structural example of a template;

[0025] Figure 4 This is a top view illustrating an example of surface layout;

[0026] Figure 5 This is a cross-sectional schematic diagram illustrating an example of the surface layout;

[0027] Figure 6 This is a schematic diagram illustrating the side view of the target before the carbon film formation step and the carbon film removal step are performed;

[0028] Figure 7 This is a schematic diagram illustrating the side view of the target after the carbon film formation step and before the carbon film removal step;

[0029] Figure 8This is a schematic diagram illustrating the side view of the target after performing the carbon film formation step and the carbon film removal step;

[0030] Figure 9 This is a schematic diagram illustrating an example configuration of the target processing device;

[0031] Figure 10 This is a sequence diagram illustrating an example of a target processing method;

[0032] Figure 11 This is a schematic diagram illustrating an example configuration of the transmission unit;

[0033] Figure 12A This is a cross-sectional view illustrating an example of a method for processing another example of an objective;

[0034] Figure 12B This is a cross-sectional view illustrating another example of a method for processing an objective;

[0035] Figure 13 This is a schematic diagram illustrating another configuration example of the target processing device;

[0036] Figure 14 This is a sequence diagram illustrating an example of a target processing method;

[0037] Figure 15 This is a schematic diagram illustrating yet another configuration example of the target processing device;

[0038] Figure 16 This is a sequence diagram illustrating an example of a target processing method;

[0039] Figure 17 This is a schematic diagram illustrating an example of a carbon film formation step that utilizes a magnet; and

[0040] Figure 18 This is a schematic diagram illustrating the behavior of positive ions during the carbon film formation step when a magnet is present. Detailed Implementation

[0041] The embodiments provide a technique for reducing the surface roughness of a target.

[0042] Typically, according to one embodiment, a target processing method includes: moving a target into a processing chamber; forming a carbon-containing film on the target using at least one of a first ion comprising carbon and a first plasma comprising carbon; and removing the film by a reaction between a second plasma and the film. The film formation and film removal are performed alternately multiple times within the processing chamber without removing the target from the processing chamber.

[0043] Hereinafter, embodiments will be described with reference to the accompanying drawings. The relationship between the thickness and planar dimensions of the elements illustrated in the drawings, the thickness ratios of the elements, etc., may sometimes differ from those of actual elements. In the embodiments, the same reference numerals are given to substantially the same elements, and their descriptions will be omitted.

[0044] [First Embodiment]

[0045] In this embodiment, examples of target processing methods and target processing devices will be described.

[0046] (Target processing method)

[0047] Figure 1 This is a schematic diagram illustrating an example of a target processing method. For example... Figure 1 For example, the target processing method includes a pattern forming step S1, a carbon film forming step S2, a carbon film removal step S3, and a cleaning step S4.

[0048] In the patterning step S1, a pattern is formed on the surface of the target. For example, the target is a master substrate. The master substrate includes a transparent substrate (e.g., a quartz glass substrate) and is, for example, a template used in a patterning method using nanoimprint lithography (NIL) or a photomask used in optical lithography. In a photomask, a pattern is formed on the transparent substrate (e.g., quartz glass) using a light-shielding film, a halftone film, etc., comprising a metal (e.g., chromium). As a general template, for example, a master template used as a mold or a replica template manufactured using a master template is used. Note that the target is not limited to a master substrate (e.g., a template). For example, the target can be a semiconductor substrate in which circuit patterns are formed on a semiconductor wafer (e.g., a silicon wafer). Examples of using a replica template for a target will be described below. However, the embodiments are not limited thereto.

[0049] In the pattern forming method using NIL, a template is pressed onto a layer of imprinted material (e.g., UV-curable resin) placed on a target, and light is irradiated to cure the imprinted material layer and transfer the pattern onto the imprinted material layer.

[0050] Figure 2 This is a perspective diagram illustrating a structural example of a template. For example... Figure 2 For example, the template includes a surface MS called a mesa and a substrate 111 having grooves CO. The substrate 111 is, for example, a quartz glass substrate. Therefore, the substrate 111 comprises silicon and oxygen. Figure 3 This is a cross-sectional view illustrating a structural example of the template, and it illustrates the structure along... Figure 2 A portion of the XZ cross section of the illustrated line segment X1-X2 includes the X-axis of the substrate 111 and the Z-axis orthogonal to the X-axis and Y-axis.

[0051] Figure 4This is a top schematic diagram illustrating an example layout of the surface MS, and also illustrating a portion of the XY plane of the substrate 111. Figure 5 This is a cross-sectional schematic diagram illustrating an example layout of surface MS, and it illustrates the layout along... Figure 4 A portion of the XZ cross-section of the substrate 111 of the illustrated line segment Y1-Y2.

[0052] The surface MS includes an embossed pattern 112. The embossed pattern 112 is a pattern transferred according to a pattern forming method using NIL. The number, position, and shape of the embossed pattern 112 are not particularly limited. For example, Figure 4 and Figure 5 An embossed pattern 112 is illustrated, formed by a protrusion 112a having an upper surface TS and a line and space including a recess 112b having a lower surface BS. The embossed pattern 112 also includes a side (also referred to as a line edge) LE of the protrusion 112a between the upper surface TS and the lower surface BS.

[0053] By alternately repeating the carbon film formation step S2 and the carbon film removal step S3 in the processing chamber I of the target processing device 100, as described below, without removing the target from the processing chamber I, the roughness of the target surface can be reduced, and thus the quality of the pattern can be improved. By using a single target processing device 100, the carbon film formation step S2 and the carbon film removal step S3 are performed without exposing the target to air.

[0054] Figure 6 , Figure 7 and Figure 8 This is a schematic diagram illustrating the target change caused by performing the carbon film formation step S2 and the carbon film removal step S3.

[0055] Figure 6 An example of the side surface LE of the template before performing the carbon film formation step S2 and the carbon film removal step S3 is shown. The side surface LE can be an uneven surface, such as... Figure 6 Example.

[0056] Subsequently, in carbon film formation step S2, as Figure 7 For example, a film 113 is formed on the surface of a substrate 111. Due to the recesses on the surface of the substrate 111, the film 113 is formed to be relatively thick, such as... Figure 7 For example, film 113 includes, for example, carbon (C). Film 113 may include, for example, a compound of silicon carbide. Film 113 may be an amorphous carbon film, such as a diamond-like carbon (DLC) film. Film 113 is formed, for example, by implanting and depositing ions (e.g., carbon ions) on the surface of a substrate 111.

[0057] Film 113 is also formed on side LE. By forming film 113, the substrate 111 is locally modified on side LE, thereby forming a hybrid layer 120. Hybrid layer 120 is formed, for example, by implanting carbon ions into substrate 111. When carbon ions are implanted into substrate 111, the Si-O bonds in the silica of the quartz glass are broken, and silicon and carbon are bonded to form Si-C bonds. Alternatively, carbon is further bonded to oxygen to form Si-OC bonds. Thus, hybrid layer 120 comprises carbon, silicon, and oxygen.

[0058] Subsequently, in carbon film removal step S3, as Figure 8 For example, membrane 113 is removed. Membrane 113 can be removed, for example, using plasma generated from a gas including at least one of oxygen, nitrogen, and rare gases.

[0059] In the carbon film removal step S3, at least a portion of the mixed layer 120 is also removed. Therefore, the roughness of the side surface LE can be reduced. The carbon film formation step S2 and the carbon film removal step S3 are repeated, for example, until the surface roughness of the substrate 111 reaches a desired value.

[0060] (Target processing equipment)

[0061] Next, a configuration example of the target processing device 100 will be described. Figure 9 This is a schematic diagram illustrating an example configuration of the target processing device 100. The target processing device 100 includes a control device A, a gas supply source B1, an AC power supply C, a DC power supply D, a lift E, a conveyor G, a vacuum discharge mechanism H, a processing chamber I, and a table J.

[0062] Control device A controls the operation of various components within the target processing equipment 100. Control device A can control at least one of the following operations: supplying gas from gas supply source B1; supplying AC voltage to processing chamber I from AC power source C; supplying DC voltage to processing chamber I from DC power source D; raising and lowering target F via elevator E; transferring target F between processing chamber I and the outside via transfer port G; and evacuating processing chamber I via vacuum discharge mechanism H.

[0063] Control device A may include hardware, such as a processor, a personal computer, etc. The hardware is directly connected to each of control device A, gas supply source B1, AC power supply C, DC power supply D, elevator E, conveyor port G, and vacuum exhaust mechanism H, or indirectly connected to each of them via a computer network. Therefore, the various operations can be controlled by sending and receiving information from each of them. Note that the various operations can be stored as operating programs in a computer-readable recording medium (e.g., memory), and the various operations can be executed by the hardware appropriately reading the operating programs stored in the recording medium.

[0064] Gas supply source B1 can supply film-forming gas and etching gas to processing chamber I, respectively. Film-forming gas includes, for example, carbon compounds such as methane (CH4), acetylene (C2H2), or toluene (C6H5CH3). Etching gas includes, for example, oxygen and fluorine. Examples of etching gases containing fluorine include fluorocarbons such as tetrafluoromethane (CF4) and trifluoromethane (CHF3). Gas supply source B1 can further supply purge gas to processing chamber I. Purge gas includes, for example, nitrogen.

[0065] Gas supply source B1 is connected to processing chamber I and control device A. Gas supply source B1 includes a cylindrical chamber B1a, a mass flow controller B1b, and gas ports B1c. Multiple cylindrical chambers B1a, mass flow controllers B1b, and gas ports B1c correspond to the quantity of gas to be supplied. For example, when gas supply source B1 supplies film-forming gas, etching gas, and purge gas, three or more cylindrical chambers B1a, three or more mass flow controllers B1b, and three or more gas ports B1c are respectively provided.

[0066] An AC power supply C is connected to the processing chamber I and the control device A. The AC power supply C can supply an AC voltage to the processing chamber I using electrodes C1 disposed within the processing chamber I. This AC voltage has a frequency equal to or greater than, for example, 13.56 MHz. The AC power supply C, together with the gas supply source B1, serves as a plasma / ion supply source.

[0067] DC power supply D is connected to processing chamber I and control device A. DC power supply D can supply DC voltage to processing chamber I using electrodes J2 embedded in stage J. DC power supply D, together with gas supply source B1, serves as a plasma / ion supply source.

[0068] Elevator E can use lifter E1 to lift target F. Elevator E is connected to control device A. Control device A controls the lifting and lowering of elevator E.

[0069] A transfer port G is located within the housing forming the processing chamber I. The transfer port G is opened or closed to connect or disconnect the processing chamber I from the outside. A control device A controls the opening and closing of the transfer port G.

[0070] The vacuum exhaust mechanism H is connected to the processing chamber I. The vacuum exhaust mechanism H can exhaust gas from the processing chamber I.

[0071] Processing chamber I is the location where the target F is processed (e.g., carbon film formation or carbon film removal). The pressure of processing chamber I can be adjusted to a predetermined pressure by normally venting gas from processing chamber I through vacuum venting mechanism H.

[0072] A platform J is set up in processing chamber I. Platform J includes a surface J1 on which the target F is arranged.

[0073] Next, we will refer to Figure 10 An example describing a target processing method using target processing device 100. Figure 10 This is a timing diagram illustrating an example of a target processing method.

[0074] like Figure 10 Examples of target processing methods include a removal step SA, a film formation step SB, an etching step SC, and a removal step SD.

[0075] In the transfer step SA, the transfer port G is opened (transfer port G: open), the target F is transferred from the transfer unit located outside the processing chamber I into the processing chamber I, and the transfer port G is closed (transfer port G: closed).

[0076] Figure 11 This is a schematic diagram illustrating an example configuration of a transfer unit. The transfer unit includes a sample holder K, a transfer robot L, a vacuum spare chamber M, and a vacuum robot N.

[0077] To move target F into processing chamber I, target F is placed on sample holder K. Control device A sets the processing plan for target F. The processing plan includes, for example, data indicating process conditions for film formation step SB and etching step SC, such as the type of supply gas, flow rate of supply gas, pressure in the processing chamber, voltage application conditions, and time duration. The data may be stored, for example, in a memory provided in control device A.

[0078] When control device A indicates the start step, the target F is transferred from sample holder K to vacuum standby chamber M via transfer robot L. Under vacuum atmosphere, the target F is typically moved from vacuum standby chamber M into processing chamber I via transfer port G by vacuum robot N (target F: moved in).

[0079] Target F, which has been moved into processing chamber I, has passed through Figure 9 The illustrated elevator E is raised from the robotic arm of the vacuum robot N. The robotic arm is then returned to its original position, the transfer port G is closed, and the target F is lowered via elevator E and placed on the surface J1 of the platform J.

[0080] Subsequently, without removing the target F from the processing chamber I, the film formation step SB and the etching step SC are alternately repeated in the processing chamber I based on the processing scheme set by the control device A.

[0081] In the film formation step SB, firstly, purge gas is introduced from gas supply source B1 into processing chamber I (purge gas: on). Therefore, the atmosphere in processing chamber I is regulated. Simultaneously, the introduction of film-forming gas and etching gas is stopped (film-forming gas and etching gas: off). Subsequently, the introduction of purge gas into processing chamber I is stopped (purge gas: off), and the introduction of film-forming gas into processing chamber I is started (film-forming gas: on). Simultaneously, the introduction of etching gas is stopped (etching gas: off).

[0082] Simultaneously with the introduction of the film-forming gas into the processing chamber I, a DC voltage is supplied from the DC power supply D. Thus, a first plasma, such as carbon plasma, is generated from the film-forming gas. The potential of the DC voltage switches over time in the following sequence: positive potential (DC power supply D: +), zero potential (DC power supply D: 0), and negative potential (DC power supply D: -). The first plasma is generated at a positive potential and, for example, deposited on the surface of the target F at a negative potential to form... Figure 7 The illustrated film 113. Note that the switching between positive potential, zero potential (non-potential), and negative potential is repeatedly performed. The number of repetitions is appropriately set according to parameters such as the thickness of the film 113 to be formed. The DC voltage potential varies at a frequency of 3 to 5 kHz within the range of ±5 kV. The supply time of the DC voltage each time is, for example, 60 seconds or less. The flow rate of the film-forming gas is, for example, 10 sccm or more. The pressure of the processing chamber I is, for example, 0.4 Pa or less. In the film-forming step SB, for example, in some cases, a film 113 with a thickness equal to or less than 5 nm is formed. Therefore, in order to control the film-forming speed, it is important to control the flow rate of the film-forming gas or the order of application of the DC voltage.

[0083] After forming the film 113 with the desired thickness, the DC voltage supply is stopped, and the supply of the film-forming gas is also stopped (film-forming gas: off). Then, purge gas is introduced from the gas supply source B1 into the processing chamber I (purge gas: on). The atmosphere in the processing chamber I is conditioned with the purge gas. At this time, the supply of both the film-forming gas and the etching gas remains stopped (film-forming gas and etching gas: off). Subsequently, the introduction of purge gas from the gas supply source B1 is stopped (purge gas: off).

[0084] In the etching step SC, the introduction of film-forming gas and purge gas is kept stopped (film-forming gas and purge gas: off), and the introduction of etching gas from gas supply source B1 into processing chamber I is started (etching gas: on).

[0085] Simultaneously with the introduction of etching gas into processing chamber I, an AC voltage is supplied from AC power source C (AC power source C: ON). Therefore, a second plasma, such as oxygen plasma, is generated from the etching gas. Figure 8 For example, the second plasma is used to remove the film 113 from the mixed layer 120 and the target F surface. The AC voltage supply time is longer than the DC voltage supply time each time, and is appropriately set according to parameters such as the thickness of the film 113 to be removed. The AC voltage supply time each time is, for example, 120 seconds or more. The etching gas flow rate is, for example, 30 sccm or more. The pressure in the processing chamber I is, for example, 2.7 Pa or less. After removing the film 113, the AC voltage supply is stopped (AC power supply C: off), and the introduction of etching gas is stopped (etching gas: off).

[0086] The second plasma is preferably an oxygen plasma. This allows for the removal of the film 113 and the hybrid layer 120 while suppressing the removal of the substrate 111 by the oxygen plasma.

[0087] Without removing the target F from processing chamber I, the film deposition step SB and the etching step SC are performed alternately in processing chamber I. Therefore, the switching between film deposition step SB and etching step SC is repeated. The number of repetitions is appropriately set according to a parameter such as the surface roughness of the target F.

[0088] In the removal step SD, open the transfer port G (transfer port G: open), and then... Figure 11 The vacuum robot N in the illustrated transfer unit removes the target F from the transfer port G (target F: removed) and closes the transfer port G (transfer port G: closed). The transport robot L returns the target F to the sample holder K through the vacuum spare chamber M and moves it outside the target processing device 100.

[0089] By performing the film deposition step SB and the etching step SC, the surface roughness of the target F can be reduced. For example, by performing the film deposition step SB and the etching step SC once, the surface roughness of the target F can be reduced to, for example, 85% of the initial state. When the film deposition step SB and the etching step SC are repeated three or more times, the surface roughness of the target F can be reduced to, for example, 74% of the initial state. At this time, the change in pattern size can be reduced to 1 nm or less.

[0090] Subsequently, in cleaning step S4, the surface of target F is cleaned. The target treatment method has been described above.

[0091] As described above, in the target processing method according to the first embodiment, carbon film formation and carbon film removal can be alternately performed in the processing chamber I using a single target processing device 100 without removing the target F from the processing chamber I. Therefore, the target F can be processed without exposing it to air, and variations in the amount of film 113 formed and removed due to oxidation and moisture absorption on the surface of the target F can be suppressed. Therefore, the surface roughness of the target can be reduced without significantly changing the processing dimensions.

[0092] [Second Embodiment]

[0093] The targets that can be processed by the target processing device 100 are not limited to templates. Figure 12A and Figure 12B This is a cross-sectional view illustrating an example of a method for processing another example of an object.

[0094] Figure 12A A portion of a target 200 is illustrated as it is moved into processing chamber I. The target 200 is, for example, a photomask and includes a substrate 201, a phase-shifting film 202, a metal film 211, and an oxide film 212, as shown. Figure 12A Example.

[0095] The substrate 201 is formed of, for example, quartz glass and includes silicon and oxygen.

[0096] The phase-shifting film 202 is, for example, a silicon nitride film, and comprises silicon and nitrogen. The phase-shifting film 202 is disposed on the substrate 201. The phase-shifting film 202 is a film in which the transmittance of exposed light is lower than that of the quartz glass on which the substrate 201 is formed, and has the property of reversing the phase of the transmitted light. A photomask including the phase-shifting film 202 is called a phase-shifting mask.

[0097] A metal film 211 is disposed on the phase shift film 202. The metal film 211 contains, for example, chromium. The phase shift film 202 is etched to obtain the metal film 211.

[0098] An oxide film 212 is disposed on a metal film 211. The oxide film 212 is, for example, a silicon oxide film and comprises silicon and oxygen. The oxide film 212 is used to process the metal film 211 by etching.

[0099] Figure 12A and Figure 12B The oxide film 212 of the illustrated target 200 has a pattern including: a protrusion 213a having an upper surface TS; and a recess 213b in which the upper surface of the metal film 211 is exposed as a lower surface BS. The oxide film 212 also has a side surface LE of the protrusion 213a between the upper surface TS and the lower surface BS.

[0100] For example, Figure 12AThe illustrated target 200 is formed in the following sequence. First, a phase-shifting film 202 is formed on a substrate 201, a metal film 211 is formed on the phase-shifting film 202, an oxide film 212 is formed on the metal film 211, and a photoresist is formed on the oxide film 212. Then, a pattern is processed by developing a pattern in the photoresist and using the photoresist with the developed pattern as a processing mask to partially etch the oxide film 212. At this time, the roughness of the photoresist can be transferred to the oxide film 212. Afterward, the target 200 is formed by removing the photoresist remaining on the oxide film 212.

[0101] Similar to the first embodiment, in Figure 12A In the illustrated target 200, the surface roughness or non-uniformity of the side LE can be reduced by alternately repeating the carbon film formation step S2 and the carbon film removal step S3 in the processing chamber I using the target processing device 100 without removing the target 200 from the processing chamber I. Since the other descriptions of the carbon film formation step S2 and the carbon film removal step S3 are the same as those in the first embodiment, the description of the first embodiment can be used.

[0102] After performing a process similar to that described in the first embodiment, such as Figure 12B For example, the metal film 211 is etched using an oxide film 212 with reduced roughness as a mask, and the phase shift film 202 is further processed using the metal film 211 as a mask to transfer a pattern onto the phase shift film 202. Subsequently, a photomask is fabricated by removing the metal film 211.

[0103] The second embodiment can be appropriately combined with other embodiments.

[0104] [Third Embodiment]

[0105] The configuration of the target processing device 100 is not limited to Figure 9 The illustrated configuration. Figure 13 This is a schematic diagram illustrating another configuration example of the target processing device 100. Figure 13 The illustrated target processing equipment 100 includes control equipment A, gas supply source B1, AC power supply C, DC power supply D, elevator E, conveyor G, vacuum discharge mechanism H, processing chamber I, and table J, and... Figure 9 The target processing device 100 illustrated is the same. The following description will be similar to... Figure 9 The differences of the illustrated target processing device 100, and the description of the first embodiment for other parts, will be adopted.

[0106] Figure 13The illustrated target processing apparatus 100 also includes a remote plasma source B2. The remote plasma source B2 is connected to a gas supply source B1 and is capable of generating remote plasma (e.g., oxygen plasma) from etching gas supplied from a cylindrical chamber B1a via a mass flow controller B1b and a gas port B1c, and supplying the remote plasma to the processing chamber I by opening a supply gate B2a. The supply gate B2a may be a valve. The remote plasma source B2 is connected to a control device A. The control device A controls the plasma supply operation from the remote plasma source B2. The remote plasma source B2, together with the gas supply source B1, serves as a plasma or ion supply source.

[0107] Similar to the first embodiment, it can be achieved by using Figure 13 The illustrated target processing apparatus 100 alternately repeats the carbon film formation step S2 and the carbon film removal step S3 to reduce the surface roughness of the side LE. In the carbon film removal step S3, a remote plasma (e.g., oxygen plasma) generated by a remote plasma source B2 can be used to remove the film 113.

[0108] Figure 14 This is a timing diagram illustrating an example of a target processing method. The differences from the first embodiment will be described below, and the description of the first embodiment will be used for other parts. For ease of description, in Figure 14 The timing diagrams for elevator E, target F, and transfer port G are omitted, but it is assumed that operations similar to those in the first embodiment are performed.

[0109] In the film formation step SB, the supply gate B2a is closed (supply gate B2a: closed), and the operation of the remote plasma source B2 is stopped (remote plasma source B2: disconnected).

[0110] In etching step SC, the introduction of film-forming gas and purge gas is kept stopped (film-forming gas and purge gas: off), and the supply gate B2a is opened (supply gate B2a: open). Subsequently, operation of the remote plasma source B2 is started (remote plasma source B2: on). Further, etching gas is introduced from gas supply source B1 into processing chamber I (etching gas: on), and AC voltage is supplied (AC power supply C: on). Thus, a second plasma is generated from the etching gas, and remote plasma is supplied to processing chamber I from remote plasma source B2. The film 113 on the surface of the mixed layer 120 and the target F is removed by the second plasma and the remote plasma. After removing film 113 and mixed layer 120, the AC voltage supply is stopped (AC power supply C: off), and the introduction of etching gas is stopped (etching gas: off). Subsequently, operation of remote plasma source B2 is stopped (remote plasma source B2: off), and the supply gate B2a is closed (supply gate B2a: closed). In this way, by setting the supply time of the remote plasma to be longer than that of the second plasma, membrane 113 can be removed and treatment chamber I can be cleaned more effectively.

[0111] Note that the AC power supply C can be omitted, and the remote plasma generated by the remote plasma source B2 can be used only to remove the film 113. Since the other descriptions of the carbon film formation step S2 and the carbon film removal step S3 are the same as those of the first embodiment, the description of the first embodiment can be used.

[0112] The third embodiment can be appropriately combined with other embodiments.

[0113] [Fourth Embodiment]

[0114] The configuration of the target processing device 100 is not limited to Figure 9 The illustrated configuration. Figure 15 This is a schematic diagram illustrating yet another configuration example of the target processing device 100. Figure 15 The illustrated target processing equipment 100 includes control equipment A, gas supply source B1, AC power supply C, DC power supply D, elevator E, conveyor G, vacuum discharge mechanism H, processing chamber I, and table J, and... Figure 9 The target processing device 100 illustrated is the same. The following description will be similar to... Figure 9 The differences of the illustrated target processing device 100, and the description of the first embodiment for other parts, will be adopted.

[0115] Figure 14The illustrated target processing apparatus 100 also includes an arc ion source B3. The arc ion source B3 generates carbon ions from a solid carbon source (e.g., a carbon rod) via arc discharge and supplies the carbon ions to the processing chamber I. The arc ion source B3 can be connected to a gas supply source B1, and a carrier gas can be introduced from a cylindrical chamber B1a via a mass flow controller B1b. The carrier gas is, for example, a rare gas. Carbon ions can be introduced from the arc ion source B3 into the processing chamber I by opening a supply gate B3a. The supply gate B3a can be a valve. The arc ion source B3 is electrically connected to a control device A. The control device A controls the ion supply operation of the arc ion source B3.

[0116] Similar to the first embodiment, it can be achieved by using Figure 15 The illustrated target processing apparatus 100 alternately repeats the carbon film formation step S2 and the carbon film removal step S3 to reduce the surface roughness of the side LE. In the carbon film formation step S2, a carbon ion-formed film 113 generated by the arc ion source B3 can be used.

[0117] Figure 16 This is a timing diagram illustrating an example of a target processing method. The differences from the first embodiment will be described below, and the description of the first embodiment will be used for other parts. For ease of description, in Figure 16 The timing diagrams for elevator E, target F, and transfer port G are omitted, but it is assumed that operations similar to those in the first embodiment are performed.

[0118] In the film formation step SB, purge gas is introduced into the processing chamber I from the gas supply source B1 (purge gas: on). Therefore, the atmosphere in the processing chamber I is regulated. Simultaneously, the introduction of film-forming gas and etching gas is stopped (film-forming gas and etching gas: off). The supply gate B3a is closed (supply gate B3a: closed). Subsequently, the introduction of purge gas into the processing chamber I is stopped (purge gas: off), and the introduction of film-forming gas into the processing chamber I is started (film-forming gas: on). Simultaneously, the introduction of etching gas is stopped (etching gas: off).

[0119] Simultaneously with the introduction of the film-forming gas into the processing chamber I, a DC voltage is supplied from the DC power supply D. Therefore, a first plasma is generated from the film-forming gas. The first plasma is generated at a positive potential and accumulates on the surface of the target F at a negative potential to form a film-forming gas. Figure 7 The illustrated membrane 113. Note that the switching between positive potential, zero potential (non-potential), and negative potential is repeated.

[0120] Simultaneously with the introduction of film-forming gas into processing chamber I, operation of arc ion source B3 is initiated (arc ion source B3: on), and supply gate B3a is opened (supply gate B3a: open). Carbon ions generated by arc ion source B3 are thus supplied to processing chamber I. The carbon ions, together with the first plasma, accumulate on the surface of target F to form film 113. After film 113 is formed, supply gate B3a is closed (supply gate B3a: closed). Subsequently, the supply of film-forming gas is stopped (film-forming gas: off). By stopping the supply of film-forming gas after closing supply gate B3a, the backflow of carbon ions to gas supply source B1 can be suppressed.

[0121] In etching step SC, the supply gate B3a is closed (supply gate B3a: closed), and the operation of the arc ion source B3 is stopped (arc ion source B3: disconnected). Note that the arc ion source B3 can remain operational.

[0122] Note that in the carbon film formation step S2, a DC power supply D may not be required; instead, carbon ions generated by the arc ion source B3 can be used to form the film 113. Since the arc ion source B3 can fine-tune the ion accumulation even when supplying only a small amount of ions, the other descriptions of the carbon film formation step S2 and the carbon film removal step S3 are the same as those in the first embodiment, the description of the first embodiment can be used.

[0123] The fourth embodiment can be appropriately combined with other embodiments. For example, Figure 9 The illustrated target processing device 100 may include both the remote plasma source B2 in the third embodiment and the arc ion source B3 in the fourth embodiment.

[0124] [Fifth Embodiment]

[0125] In use Figure 9 In the target processing method of the illustrated target processing apparatus 100, surface cleaning of the target F can be performed before the carbon film formation step S2 and the carbon film removal step S3. Cleaning is performed by exposing the surface of the target F to a plasma generated from oxygen, nitrogen, or a rare gas (e.g., helium (He) or argon (Ar)). The plasma used for cleaning can be generated from a gas supplied from a cylindrical chamber B1a via a mass flow controller B1b and a gas port B1c, for example by supplying an AC voltage from an AC power source C.

[0126] Cleaning may be performed at least before the first carbon film formation step S2, and may be performed or not performed before the second or subsequent carbon film formation step S2.

[0127] The fifth embodiment can be appropriately combined with other embodiments.

[0128] [Sixth Embodiment]

[0129] In use Figure 9 In the target processing method of the illustrated target processing apparatus 100, the target processing can be set using a processing scheme such that the thickness of the film 113 formed in the carbon film formation step S2 is measured, and the duration of the etching step SC in the carbon film removal step S3 is determined based on the measured thickness.

[0130] As a method for measuring the thickness of film 113, a method that can measure the film thickness without opening the processing chamber I to the atmosphere is preferred. For example, one method calculates the film thickness by forming an observation port provided in the outer shell I1 of the processing chamber I (so that light is incident on the surface of the target F through the observation port) and measuring the light transmittance. When the light transmittance of the target F is high, the thickness of film 113 can be measured by utilizing the interference of light. When the thickness of film 113 is represented by T [mm], the removal rate of film 113 is represented by S [nm / s], and the over-etching rate is represented by Over [%], the duration of etching conditions sufficient to remove film 113 with the calculated thickness is determined by (T / S)(1+Over / 100) [s].

[0131] The sixth embodiment can be appropriately combined with other embodiments.

[0132] [Seventh Embodiment]

[0133] In use Figure 9 In the target processing method of the illustrated target processing apparatus 100, the carbon film formation step S2 can be performed using a magnet.

[0134] Figure 17 This is a schematic diagram illustrating an example of carbon film formation step S2 in which a magnet is used. Figure 17 An example of a structure 102 is shown, comprising a tray 121 and a magnet 122. This structure 102 uses a conveying unit to move the target F in or out.

[0135] Tray 121 can accommodate target F. Tray 121 can be formed using, for example, a resin material (e.g., plastic). Tray 121 is preferably a dielectric. As a dielectric, a resin such as polyetheretherketone (PEEK) can be used. Tray 121 is preferably formed of a material with high heat resistance, abrasion resistance, and excellent dimensional stability.

[0136] Magnet 122 is embedded in tray 121 located below target F and overlaps with the receiving unit of target F in the Z-axis direction. Magnet 122 has an S-pole region 122a facing target F and an N-pole region 122b opposite to target F. Magnet 122 has unipolarity in a direction parallel to the bottom surface 124 of recess 123. Magnet 122 is disposed on tray 121 and can be detachably mounted on tray 121. Magnet 122 is, for example, a ferromagnet. Examples of ferromagnets include, for example, permanent magnets, wherein materials such as ferrite, samarium-cobalt alloy, neodymium, and iron-aluminum-silicon based alloys are used. Magnet 122 can be embedded in electrode J2.

[0137] In the carbon film formation step S2, as described above, a DC voltage is supplied and plasma is generated by the film-forming gas. At this time, magnetic field lines ML are formed from the S pole region 122a to the N pole region 122b in the direction where the magnet 122 intersects with the target F.

[0138] When plasma is generated, the temperature of electrode J2 is preferably adjusted, for example, by a temperature control mechanism, so that magnet 122 is below its Curie temperature. Permanent magnets containing rare earth elements (e.g., neodymium) are susceptible to thermal effects. Since the plasma used for film formation is a heat source, the properties of magnet 122 can be maintained by controlling its temperature. For example, the Curie temperature of neodymium is approximately 330°C.

[0139] Figure 18 This is a schematic diagram illustrating the behavior of positive ions P (e.g., carbon ions) in carbon film formation step S2 when magnet 122 is set. When magnet 122 is set, positive ions P are accelerated by a magnetic field based on magnetic field lines ML. A Lorentz force is applied to the accelerated positive ions P. According to Fleming's left-hand rule, the Lorentz force transforms the motion of positive ions P into helical motion. That is, positive ions P perform helical motion in a helical manner in the direction intersecting the surface of electrode J2, such as... Figure 18 For example, in this case, since the amount of positive ions P with sliding motion increases more than the amount of positive ions P with linear motion, the cumulative amount of positive ions P on the side LE relative to the upper surface TS can be increased. Note that the angular velocity of the helical motion is proportional to the magnetic flux density of the magnet. Therefore, the helical motion increases with the increase of the magnetic flux density, and thus, the amount of positive ions P with sliding motion can increase more than the amount of positive ions P with linear motion.

[0140] The seventh embodiment can be appropriately combined with other embodiments.

[0141] While certain embodiments have been described, these embodiments are presented by way of example only and are not intended to limit the scope of the invention. In fact, the novel embodiments described herein can be embodied in various other forms; furthermore, various omissions, substitutions, and changes can be made to the forms of the embodiments described herein without departing from the spirit of the invention. The appended claims and their equivalents are intended to cover these forms or modifications that fall within the scope and spirit of the invention.

Claims

1. A target processing method, comprising: The target with the substrate is moved into the processing chamber; A carbon-containing film is formed on the substrate of the target using at least one of a first ion containing carbon and a first plasma containing carbon, thereby forming a hybrid layer by at least partially altering the substrate. as well as At least a portion of the mixed layer and the membrane are removed by the reaction between the second plasma and the membrane. In this process, the formation and removal of the membrane are performed alternately multiple times within the processing chamber without removing the target from the processing chamber.

2. The target processing method according to claim 1, wherein, The formation of the membrane includes: introducing a first gas comprising carbon into the processing chamber, generating the first plasma from the first gas by supplying a first voltage to the processing chamber, forming the membrane on the target using the first plasma, and subsequently stopping the supply of the first voltage and the introduction of the first gas.

3. The target processing method according to claim 2, wherein, The potential of the first voltage switches in the order of positive potential, zero potential, and negative potential.

4. The target processing method according to claim 1, wherein, The formation of the membrane includes: generating the first ion from a carbon source by arc discharge, introducing the first ion into the processing chamber, using the first ion to form the membrane on the target, and subsequently stopping the introduction of the first ion.

5. The target processing method according to claim 1, wherein, The membrane removal includes: introducing a second gas into the processing chamber, generating a second plasma from the second gas by supplying a second voltage to the processing chamber, removing the membrane by a chemical reaction between the second plasma and the membrane, and subsequently stopping the supply of the second voltage and the introduction of the second gas.

6. The target processing method according to claim 1, wherein, The membrane removal includes: introducing the second plasma, generated by a second gas in a remote plasma source, into the processing chamber; removing the membrane through a chemical reaction between the second plasma and the membrane; and subsequently stopping the introduction of the second plasma.

7. The target processing method according to claim 1, wherein, The membrane is an amorphous carbon membrane.

8. The target processing method according to claim 1, wherein, The formation of the membrane is performed by positioning a ferromagnet below the target, the ferromagnet having unipolarity in a direction substantially parallel to the bottom surface of the target.

9. The target processing method according to claim 1, wherein, The target is a photomask or template.

10. A target processing device, comprising: Processing room; The first supply source is configured to supply at least one of a first ion comprising carbon or a first gas comprising carbon. The second supply source is configured to generate a second plasma from a second gas; A conveying unit configured to convey a target having a substrate into the processing chamber; as well as A control device configured to alternately perform a first operation and a second operation multiple times while controlling the first supply source and the second supply source and without removing the target from the processing chamber. In the first operation, a carbon-containing film is formed on a substrate of the target disposed in the processing chamber using at least one of the first ions and a first plasma generated by the first gas. By forming the film, at least the substrate is at least partially altered to form a mixed layer. In the second operation, at least a portion of the mixed layer and the film are removed by a chemical reaction between the second plasma and the film.

11. The target processing apparatus according to claim 10, further comprising: A first power source is configured to supply a first voltage to the processing chamber; A second power source is configured to supply a second voltage to the processing chamber; as well as A gas supply source configured to selectively introduce a first gas comprising carbon and a second gas into the processing chamber. The first operation includes: introducing the first gas from the gas supply source into the processing chamber; generating the first ions from the first gas by supplying the first voltage from the first power source to the processing chamber; and subsequently stopping the supply of the first voltage and the introduction of the first gas. The second operation includes: introducing the second gas from the gas supply source into the processing chamber, generating the second plasma from the second gas by supplying the second voltage from the second power source into the processing chamber, and subsequently stopping the supply of the second voltage and the introduction of the second gas.

12. The target processing apparatus according to claim 10, wherein, The first supply source includes an arc ion source, which generates the first ions through arc discharge and introduces the first ions into the processing chamber.

13. The target processing apparatus according to claim 10, wherein, The second supply source includes a remote plasma source that generates the second plasma from the second gas and introduces the second plasma into the processing chamber.

14. The target processing apparatus according to claim 10, wherein, The first operation is performed by positioning a ferromagnet below the target, the ferromagnet having unipolarity in a direction generally parallel to the bottom surface of the target.

15. The target processing apparatus according to claim 10, wherein, The conveying unit is a robot, and the processing chamber includes a conveyor port through which the target is conveyed into and removed from the processing chamber.

16. The target processing apparatus according to claim 15, wherein, The transfer port opens when the target is transferred into and removed from the processing chamber, and closes during the first and second operations.

17. The target processing apparatus according to claim 10, wherein, The target is a photomask or template.

18. A method for processing a photomask or template, comprising: The processing target with the substrate is transferred to the processing chamber and the processing target is placed on the table; Perform a first operation on the processing target placed on the stage, the first operation including supplying at least one of a first ion comprising carbon or a first gas comprising carbon, and forming a carbon-component film on a substrate of the processing target using at least one of the first ion and a first plasma generated from the first gas, thereby forming a hybrid layer by at least partially altering the substrate of the processing target by forming the film. A second operation is performed on the processing target placed on the stage, the second operation including generating a second plasma from a second gas and removing at least a portion of the mixed layer and the membrane by a chemical reaction between the second plasma and the membrane; as well as Without removing the processing target from the processing chamber, repeat the first and second operations multiple times.

19. The method of claim 18, further comprising: The thickness of the film formed on the treatment target is measured during the first operation without opening the treatment chamber to the atmosphere.

20. The method according to claim 18, wherein, A ferromagnet is placed between the processing target and the stage, and during the first operation, a force from the magnetic field generated by the ferromagnet is applied to the first ion.

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