A method, apparatus, and computer storage medium for detecting wire defects in crystal rods.

Abstract

This disclosure provides a method, apparatus, and computer storage medium for detecting line defects in a crystal rod. The method may include: performing stress detection on multiple wafers obtained from the crystal rod to obtain defective wafers and determining stress points on the defective wafers; obtaining the projection line segment of the line connecting the stress points between any two defective wafers onto the radial plane of the crystal rod; determining the angle between the line connecting the stress points and the radial plane in response to the projection line segment being parallel to the 110 crystal orientation of the crystal rod; and determining that a line defect exists in the crystal rod in response to the angle being equal to a preset value within a threshold range.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor manufacturing technology, and in particular to a method, apparatus, and computer storage medium for detecting defects in crystal rod lines. Background Technology

[0002] Single-crystal silicon wafers are currently the most widely used device substrates in the electronics and information field. The manufacturing process of silicon wafers includes crystal growth, cutting, grinding, etching, and polishing. During the actual crystal growth process, the single-crystal state of the single-crystal silicon rod may be lost due to impurity doping or molten liquid fluctuations, resulting in through-line defects in the single-crystal silicon. Wafers with line defects are highly susceptible to device failure after subsequent processing; therefore, the detection of line defects in crystal rods is crucial.

[0003] However, related technologies for detecting defects in crystal rods can often only detect vacancy defects or self-interstitial defects in larger crystal sheets. Single or multiple line defects extending within the crystal rod cannot be detected during the crystal rod slicing stage. They can often only be detected during particle inspection after wafer polishing or even after heat treatment, resulting in serious production waste. Summary of the Invention

[0004] In view of this, the present disclosure aims to provide a method, apparatus, and computer storage medium for detecting line defects in crystal rods, thereby reducing production waste when performing line defect detection on crystal rods.

[0005] The technical solution of this disclosure embodiment is implemented as follows:

[0006] In a first aspect, embodiments of this disclosure provide a method for detecting wire defects in crystal rods, including:

[0007] Stress testing is performed on multiple wafers obtained from the crystal rod to obtain defective wafers and determine the stress points on the defective wafers;

[0008] Obtain the projection line segment of the line connecting the stress points between any two defective wafers onto the radial plane of the crystal rod;

[0009] In response to the fact that the projected line segment is parallel to the 110 crystal orientation of the crystal rod, the angle between the line connecting the stress points and the radial plane is determined.

[0010] If the included angle is equal to a preset value within the threshold range, it is determined that the crystal rod has a line defect.

[0011] In some examples, the response that the projected line segment is parallel to the 110 crystal orientation of the crystal rod, determining the angle between the line connecting the stress points and the radial plane, includes:

[0012] Determine the spacing between the two defective wafers on the original ingot;

[0013] The included angle is determined based on the interval and the length of the projected line segment.

[0014] In some examples, the method further includes:

[0015] Obtain the positional information of the two defective wafers on the original ingot;

[0016] The starting and ending positions of the line defect on the crystal rod are determined based on the location information, the included angle, and the projected line segment.

[0017] In some examples, determining the start and end positions of the line defect on the crystal rod based on the position information, the included angle, and the projected line segment includes:

[0018] Obtain the orthographic projection of the defective wafer onto the radial plane of the crystal rod;

[0019] Extend the projected line segment until it intersects the edge of the orthographic projection of the wafer to obtain two extended line segments;

[0020] The lengths of the two extension segments are determined respectively, and the height information of the two extension segments in the axial direction of the crystal rod is determined based on the lengths of the two extension segments respectively.

[0021] The starting position and the ending position are determined based on the height information and the position information.

[0022] In some examples, determining the start and end positions of the line defect on the crystal rod based on the location information and the projected line segment includes:

[0023] Obtain the orthographic projection of the defective wafer onto the radial plane of the crystal rod;

[0024] Extend the projected line segment until it intersects the edge of the orthographic projection of the wafer to obtain two extended line segments;

[0025] The lengths of the two extension segments are determined respectively, and the height information of the two extension segments in the axial direction of the crystal rod is determined based on the lengths of the two extension segments respectively.

[0026] The starting position and the ending position are determined based on the height information and the position information.

[0027] In some examples, the method further includes:

[0028] A predetermined number of wafers are obtained between the starting position and the ending position of the crystal rod, and stress detection is performed on the wafers to obtain defective wafers;

[0029] If the number of defective wafers meets a preset condition, the portion of the crystal rod between the start position and the end position is determined to be defective.

[0030] In some examples, the number of defective wafers is 1, indicating that the ingot does not have line defects;

[0031] If there are multiple defective wafers, then multiple defective wafers can be combined in pairs to obtain multiple sets of defective wafer combinations.

[0032] If the projected line segments of all the defective wafer combinations are not parallel to the 110 crystal orientation of the crystal rod, it is determined that the crystal rod does not have line defects.

[0033] If the angle between the stress point line connecting all the defective wafer combinations and the radial plane is not equal to the preset value within a threshold range, it is determined that the crystal rod does not have line defects.

[0034] In some examples, the preset value is between 53 and 55 degrees.

[0035] Secondly, embodiments of this disclosure provide a crystal rod wire defect detection device, including:

[0036] The detection module is used to perform stress detection on multiple wafers obtained from the crystal rod to obtain defective wafers and determine the stress points on the defective wafers.

[0037] The acquisition module is used to acquire the projection line segment of the stress point connection between any two defective wafers onto the radial plane of the crystal rod.

[0038] The determination module is used to determine the angle between the line connecting the stress points and the radial plane in response to the parallelism between the projected line segment and the 110 crystal orientation of the crystal rod.

[0039] The determination module is used to determine that the crystal rod has a line defect when the included angle is equal to a preset value within the threshold range.

[0040] Thirdly, embodiments of this disclosure provide an electronic device, the electronic device comprising: a processor and a memory; the processor is configured to execute instructions stored in the memory to implement the rod wire defect detection method described in the first aspect.

[0041] Fourthly, embodiments of this disclosure provide a computer storage medium storing at least one instruction, which is executed by a processor to implement the rod wire defect detection method as described in the first aspect.

[0042] This disclosure provides a method, apparatus, and computer storage medium for detecting line defects in crystal rods. First, stress testing is performed on multiple wafers obtained from the crystal rod to identify defective wafers and determine stress points on them. Then, the projection line segment of the line connecting any two defective wafers' stress points onto the radial plane of the crystal rod is obtained. When the projection line segment is parallel to the 110° crystal direction of the crystal rod, the angle between the stress point line and the radial plane is determined. If the angle is equal to a preset value within a threshold range, a line defect is determined to exist in the crystal rod. Compared to existing technologies, this method allows for the determination of line defects in the crystal rod through random sampling, eliminating the need for inspection after wafer polishing or even heat treatment, thus avoiding polishing and heat treatment of defective wafers and reducing production waste. Attached Figure Description

[0043] Figure 1 This is a schematic diagram of a crystal rod ridge provided in an embodiment of the present disclosure.

[0044] Figure 2 This is a schematic diagram of the implementation environment for a method for detecting wire defects in a crystal rod provided in an embodiment of this disclosure.

[0045] Figure 3 This is a flowchart of a method for detecting wire defects in a crystal rod, provided in an embodiment of this disclosure.

[0046] Figure 4 This is a structural schematic diagram of a stress point connection line provided in an embodiment of this disclosure.

[0047] Figure 5 This is a schematic diagram of a projection line segment provided in an embodiment of this disclosure.

[0048] Figure 6 This is a schematic diagram illustrating a crystal orientation representation provided in an embodiment of the present disclosure.

[0049] Figure 7 This is a schematic diagram illustrating the angle between a stress connection line and a radial plane, provided as an embodiment of this disclosure.

[0050] Figure 8 This is a schematic diagram of an extended line segment provided in an embodiment of this disclosure.

[0051] Figure 9 This is a schematic diagram of an extended line segment in a coordinate system provided by an embodiment of the present disclosure.

[0052] Figure 10 This is a schematic diagram of the starting and ending positions of a line defect provided in an embodiment of this disclosure.

[0053] Figure 11 This is a schematic diagram of a crystal rod wire defect detection device provided in an embodiment of the present disclosure.

[0054] Figure 12 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this disclosure.

[0055] The accompanying drawings have illustrated specific embodiments of this disclosure, which will be described in more detail below. These drawings and descriptions are not intended to limit the scope of the concept in any way, but rather to illustrate the concepts of this disclosure to those skilled in the art through reference to particular embodiments. Detailed Implementation

[0056] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numerals in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this disclosure. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this disclosure as detailed in the appended claims.

[0057] Single-crystal silicon wafers are currently the most widely used device substrates in the electronics and information field. The manufacturing process of silicon wafers includes crystal growth, cutting, grinding, etching, and polishing. Single-crystal silicon rods are grown using methods also known as the Czochralski (CZ) method or the floating zone (FZ) method. The CZ method involves melting polycrystalline silicon and then immersing a seed crystal with a specific crystal orientation in the molten polycrystalline silicon to pull the single-crystal silicon. During crystal growth, silicon atoms follow the lattice arrangement of the seed crystal to align downwards, increasing the length until the crystal rod is fully grown. Figure 1 As shown, the edges on the outer side of the grown crystal rod represent the existence of its single crystal state, and the disappearance of the edges during the growth process indicates the loss of the single crystal state.

[0058] In actual crystal growth, the loss of the single crystal state of a single crystal silicon rod may occur due to the introduction of impurities or fluctuations in the molten liquid, resulting in through-line defects in the single crystal silicon. Once a line defect is generated, it will extend along a specific direction within the crystal rod until it stops at the edge of the crystal rod, unless it is blocked by defects within the crystal (oxygen precipitates / metal silicide impurities) or encounters another dislocation during the extension process. Wafers with line defects are prone to device failure after subsequent processing. Therefore, crystal rods with line defects are usually melted back and re-drawn.

[0059] As mentioned above, line defects can extend to the edge of the crystal rod. Therefore, the presence of line defects inside the crystal can usually be determined by whether the edge line on the outside of the crystal rod is lost. However, line defects may be blocked by other defects in the crystal rod or stop when they encounter another line defect. In this case, the line defect stops inside the crystal rod and does not extend to the edge of the crystal rod to cause the edge line to be lost, so it will not be detected by the user.

[0060] However, after such a crystal ingot is pulled, a dislocation point running through the entire wafer will appear on the wafer after subsequent slicing. This dislocation point is prone to causing fragmentation during grinding or polishing. Even if the grinding and polishing process is successfully completed, the line defect will inevitably lead to larger crystal defects such as stacking faults during the various heat treatment processes in device fabrication, causing device failure or even directly causing fragmentation. Therefore, it is very important to detect line defects in the crystal ingot before processing.

[0061] In related technologies, defects in crystal rods can often only be detected in larger crystal vacancy defects or self-interstitial defects. Single or multiple line defects extending within the crystal rod cannot be detected during the crystal rod slicing stage and can often only be detected after wafer polishing or even after heat treatment, resulting in serious production waste.

[0062] Based on this, this disclosure first provides a method for detecting wire defects in crystal rods. Figure 2 The schematic diagram shows the implementation environment of the crystal rod line defect detection method of the present disclosure, which may include electronic device 220 and stress detection device 210. Electronic device 220 can first acquire the three-dimensional image information of the crystal rod and determine the positions of multiple wafers randomly acquired in the crystal rod, so that the user can acquire multiple wafers in the crystal rod.

[0063] The stress detection device 210 may include a generator 211, a polarizer 212, and a receiver 213. The generator 211 emits infrared light, and the receiver receives the polarization information generated by the infrared light passing through the polarizer 212 and the wafer 230. The stress detection device 210 performs stress detection on the wafer 230 and transmits the image during detection to the electronic device 220 to identify multiple defective wafers among multiple wafers. Next, the electronic device can acquire the projection line segment of the stress point connection between any two defective wafers onto the radial plane of the crystal rod. When the projection line segment is parallel to the 110 crystal direction of the crystal rod, the angle between the stress point connection line and the radial plane is determined, and then it is determined whether the angle is equal to a preset value within a threshold range to determine whether there is a line defect in the crystal rod.

[0064] Figure 3 A flowchart of a wafer hydrophobicity detection method is shown, which can be applied to the above-mentioned electronic device 220. The above-mentioned crystal rod line defect detection method may include steps S310 to S340.

[0065] In step S310, stress detection is performed on multiple wafers obtained from the crystal rod to obtain defective wafers and determine the stress points on the defective wafers.

[0066] In one example embodiment of this disclosure, multiple wafers can be obtained from a crystal rod. The method of obtaining the wafers can be random sampling, and the number of samples can be positively correlated with the length of the crystal rod. The specific number can be customized according to user needs, which will not be elaborated in this example embodiment.

[0067] After obtaining multiple wafers, it is possible to utilize... Figure 2 The stress detection device 210 performs stress detection on the wafer. Specifically, during the detection, the wafer can be placed on a rotating stage, and the stress detection device 210 moves from the center to the edge along the radial direction. The stress detection device 210 collects 360-degree polarization information at each radius, and then continuously moves towards the edge to collect polarization information of each radius circle, thereby determining whether the wafer has stress defects, and thus judging the wafer to be a defective wafer.

[0068] After obtaining the defective wafer, the stress points of the defective wafer, i.e., the locations of the stress defects, can be determined. During testing by the stress detection device 210, an electronic device connected to the receiver 213 generates a stress image corresponding to the wafer based on the polarization information received by the receiver, thereby determining the stress points of the wafer.

[0069] In step S320, the projection line segment of the stress point connection between any two defective wafers onto the radial plane of the crystal rod is obtained.

[0070] In some exemplary embodiments of this disclosure, the number of defective wafers can be determined first. When the number of defective wafers is 1, it can be determined that the crystal rod does not have line defects.

[0071] When the number of defective wafers is greater than or equal to 2, any two defective wafers can be obtained from the multiple defective wafers, and the stress point connection line between the two defective wafers can be obtained. Specifically, refer to... Figure 4 The stress point connection line mentioned above refers to the connection line between the stress points of the two defective wafers when the defective wafers are in the original position of the crystal rod.

[0072] For example, refer to Figure 4 The two defective wafers include a first wafer 410 and a second wafer 420. The first wafer 410 has a stress point A, and the second wafer 420 has a stress point B. The positional relationship between the first and second wafers is as follows: Figure 4 As shown, the line connecting the stress points of the first wafer 410 and the second wafer 420 is AB.

[0073] After obtaining the above connections, as Figure 5As shown, the projection line segment of the stress point connection line AB on the radial plane 430 of the crystal rod can be determined. Specifically, the projection point of stress point A on the radial plane is point a, and the projection point of stress point B on the radial plane 430 is point b. At this time, the projection line segment of the stress point connection line AB is ab.

[0074] In step S330, the angle between the stress point line and the radial plane is determined when the response projection line segment is parallel to the 110 crystal direction of the crystal rod.

[0075] In some exemplary embodiments of this disclosure, after obtaining the above-mentioned projected line segment, the 110 radial direction of the crystal rod can be determined first, and then it can be determined whether the above-mentioned projected line segment is parallel to the 110 crystal orientation of the crystal rod.

[0076] In some exemplary embodiments, crystal orientation refers to a fundamental characteristic of a crystal: its directionality, with different crystal properties along different directions of the lattice. The crystal orientation can be determined using methods such as X-ray diffraction, electron backscatter diffraction, and transmission electron microscopy, which will not be elaborated upon in this exemplary embodiment.

[0077] In some instances, refer to Figure 6 A three-dimensional coordinate system can be established with the center of the radial plane as the origin, where the axial direction is the Z-axis. The X-axis and Y-axis are determined on the radial plane so that the 110 crystal orientation is in the same direction as the line connecting the origin and the coordinate (1, 1, 0) point.

[0078] In some examples, the angle between the line connecting the stress points and the radial plane is determined when the above-mentioned projected line segment is parallel to the 110 crystal orientation of the above-mentioned crystal rod.

[0079] Specifically, such as Figure 7 As shown, the aforementioned included angle can be the angle between the aforementioned projected line segment and the line connecting the aforementioned stress points, i.e. Figure 7 Angle α in the equation.

[0080] In step S340, if the response angle is equal to a preset value within the threshold range, it is determined that the crystal rod has a line defect.

[0081] In some example embodiments of this disclosure, after obtaining the aforementioned included angle, it can be determined whether the included angle is within the threshold range and equal to the aforementioned preset value.

[0082] The preset value can be any value between 53 degrees and 55 degrees, or other values ​​obtained from experiments, which will not be elaborated in this example implementation.

[0083] Optionally, the threshold range can be 0.01, or it can be customized according to the user's requirements for accuracy, which will not be elaborated in this example implementation.

[0084] After obtaining the aforementioned included angle, it can be determined whether the included angle is within the threshold range and equal to the aforementioned preset value. If so, it is determined that the crystal rod has a line defect.

[0085] The crystal rod line defect detection method in this embodiment can determine whether there are line defects in the crystal rod by sampling inspection, without the need to detect after wafer polishing or even after heat treatment, thus avoiding operations such as polishing and heat treatment of defective wafers and reducing production waste.

[0086] In some exemplary embodiments of this disclosure, when determining the angle between the stress point line and the radial plane, the spacing between the two defective wafers on the original ingot can be obtained first, and then the angle can be determined based on the spacing and the length of the projected line segment.

[0087] Specifically, refer to Figure 7 The distance between the two defective wafers on the original crystal rod is ΔL, that is, the distance between the first wafer 410 and the second wafer 420 is ΔL. The length of the projected line segment is ab. Then, the angle between the line connecting the stress points and the radial plane can be expressed as:

[0088] Optionally, when the preset value is 54.74 degrees, the tangent of the preset value is approximately... Therefore, when determining whether the aforementioned included angle is within the threshold range and equal to the aforementioned preset value, it is possible to directly determine whether the aforementioned interval ΔL and the length ab of the projected line segment are within the threshold range and equal to the aforementioned preset value.

[0089] It should be noted that the above-mentioned included angle can also be obtained by direct measurement or by other inverse trigonometric functions, which will not be elaborated in this example implementation.

[0090] In some examples, it can also be determined whether the stress point connection line is parallel to the 112 crystal orientation to determine whether the stress point connection line is equal to the preset value within the threshold range.

[0091] In some exemplary embodiments of this disclosure, the starting and ending positions of the line defects on the original crystal rod can be determined based on the two defective wafers and their positional information.

[0092] It should be noted that when obtaining the above position information, the position information of the wafer on the crystal rod can be determined along the axial direction of the crystal rod. For example, taking the position of one end of the crystal rod as 0, the distance of the defective wafer from the end with position 0 is obtained, and the above distance is used as the position information of the defective wafer.

[0093] Specifically, refer to Figure 8 First, the defective wafer can be projected onto the radial plane of the crystal rod. Then, the projection line segment can be extended until it intersects the edge of the wafer projection, resulting in two extended line segments. The lengths of the two extended line segments can then be determined.

[0094] Specifically, refer to Figure 9 Based on the coordinates of the above-mentioned orthographic projection in the above-mentioned coordinate system, and the coordinates of the above-mentioned projection line segment in the above-mentioned coordinate system, the lengths of the above-mentioned two extended line segments are determined. Assuming that the intersection points of the above-mentioned projection line segment and the edge of the wafer orthographic projection are C and D respectively, the radius of the above-mentioned wafer orthographic projection is 150mm, and the coordinates of the two ends of the above-mentioned projection line segment are (75.8, 32.7) and (-34.9, -76.9) respectively, then, through calculation, the coordinates of point C are (125.6, 82) and the coordinates of point D are (-83.2, -124.8). Through calculation, it can be found that the length of the above-mentioned extended line segment Da is 6.8cm and the length of the extended line segment Cb is 7.01cm.

[0095] Then, based on the lengths of the two extended segments, the height information corresponding to the two extended segments in the axial direction of the crystal rod can be determined. Specifically, refer to... Figure 10 As shown, the height information is the length of the extended line segment mentioned above. times.

[0096] For example, suppose the two defective wafers are located at 151.29 cm and 173.34 cm on the original ingot, respectively. Extend the ab connecting line to intersect the wafer edge at points C and D, with coordinates D: (125.6, 82) and C: (-83.2, -124.8), respectively, in millimeters. Given the coordinates of four points, the distance X between any two points can be calculated using the formula for the distance between two points. CD =29.39cm, X Da =7.01cm, X Cb = 6.8cm, from length X CD The theoretical length of a crystal rod with line defects can be calculated as follows: The starting point of the ingot line defect risk region is the first wafer upwards. The starting point is at 141.38 cm on the crystal rod; the ending point of the crystal rod line defect risk area is the second wafer downwards. That is, the termination position of the crystal rod at 182.96cm.

[0097] In some instances, if the number of the aforementioned defective experience wafers is 1, then the ingot is determined to be free of line defects.

[0098] In other instances, multiple defective wafers can be combined in pairs to obtain multiple sets of defective wafer combinations. When the projected line segments of the multiple sets of defective wafer combinations are not parallel to the 110 crystal orientation of the crystal rod, it is determined that the crystal rod does not have line defects.

[0099] The process of determining the above-mentioned projection line segments has been explained in detail above, so it will not be repeated here.

[0100] In some examples, when the angle between the line connecting the stress points of all defective wafer combinations and the radial plane of the line defect is not equal to the preset value of the line defect within the threshold range, it is determined that the line defect in the crystal rod does not have a line defect.

[0101] The process of obtaining the angle between the line connecting the stress points and the radial plane has been explained in detail above and will not be repeated here.

[0102] In other words, if in a set of defective wafer combinations, the projection line segment of the stress point connection line of one set of defective empirical combinations onto the radial plane of the crystal rod is parallel to the 110 crystal direction of the crystal rod, and the angle between the stress point connection line and the radial plane is equal to a preset value within the threshold range, then the crystal rod will be determined to have a line defect.

[0103] In some examples, after obtaining the above-mentioned starting position and ending position, a preset number of wafers can be obtained between the starting position and the ending position of the crystal rod, and stress detection can be performed on the wafers to obtain defective wafers; wherein the preset number is positively correlated with the interval length between the above-mentioned starting position and ending position, and the specific number is not elaborated here.

[0104] If the number of defective wafers meets a preset condition, the portion of the wafer ingot between its start and end positions is deemed unqualified. The preset condition can be customized according to the user's accuracy requirements, and will not be elaborated upon in this example implementation.

[0105] It should be noted that the above embodiment can determine whether there are line defects in the crystal rod through sampling inspection, eliminating the need for inspection after wafer polishing or even after heat treatment. This avoids operations such as polishing and heat treatment of defective wafers, reducing production waste. Furthermore, geometric calculations can determine the start and end positions of line defects in the crystal rod, enhancing inspection efficiency and reducing production waste caused by discovering defects after slicing.

[0106] Furthermore, this disclosure also provides a crystal rod wire defect detection device, referring to... Figure 11 As shown, the crystal rod wire defect detection device 1100 may include a detection module 1110, an acquisition module 1120, a determination module 1130, and a judgment module 1140. Wherein:

[0107] The detection module 1110 can be used to perform stress detection on multiple wafers obtained from the crystal rod to obtain defective wafers and determine the stress points on the defective wafers.

[0108] The acquisition module 1120 can be used to acquire the projection line segment of the stress point connection between any two defective wafers onto the radial plane of the crystal rod.

[0109] The determination module 1130 can be used to determine the angle between the stress point line and the radial plane in response to the parallelism between the projected line segment and the 110 crystal orientation of the crystal rod.

[0110] The determination module 1140 can be used to determine that the crystal rod has a line defect when the included angle is equal to a preset value within the threshold range.

[0111] In some examples, the determining module 1130 can also determine the spacing between the two defective wafers on the original ingot; and determine the included angle based on the spacing and the length of the projected line segment.

[0112] In some examples, the crystal rod line defect detection device 1100 can also be used to obtain the position information of two defective wafers on the original crystal rod; and determine the start and end positions of the line defects on the crystal rod based on the position information, the included angle and the projected line segment.

[0113] In some examples, the crystal rod line defect detection device 1100 can also be used to obtain the orthographic projection of the defective wafer on the radial plane of the crystal rod; extend the projection line segment until it intersects with the edge of the orthographic projection of the wafer to obtain two extended line segments; determine the length of the two extended line segments respectively, and determine the height information of the two extended line segments in the axial direction of the crystal rod based on the length of the two extended line segments respectively; and determine the starting position and the ending position based on the height information and the position information.

[0114] In some examples, the crystal rod wire defect detection device 1100 can also be used to establish a rectangular coordinate system in the radial plane of the crystal rod and determine the endpoint coordinates of the extended line segments; and determine the length of the two extended line segments based on the endpoint coordinates of the extended line segments.

[0115] In some examples, the crystal rod line defect detection device 1100 can also be used to acquire a preset number of wafers between the start position and the end position of the crystal rod, and perform stress detection on the wafers to obtain defective wafers; in response to the number of defective wafers meeting a preset condition, the part between the start position and the end position of the crystal rod is determined to be unqualified.

[0116] In some examples, the crystal rod line defect detection device 1100 can also be used to determine that the crystal rod does not have a line defect when the number of defective wafers is 1; to determine that the crystal rod does not have a line defect when the number of defective wafers is multiple, and to combine multiple defective wafers in pairs to obtain multiple sets of defective wafer combinations; to determine that the crystal rod does not have a line defect when the projected line segments of all defective wafer combinations are not parallel to the 110 crystal orientation of the crystal rod; and to determine that the crystal rod does not have a line defect when the angle between the stress point line connecting all defective wafer combinations and the radial plane is not equal to a preset value within a threshold range.

[0117] In some examples, the above preset value is between 53 and 55 degrees.

[0118] Please refer to Figure 12 This document illustrates a structural block diagram of an electronic device provided in an exemplary embodiment of the present disclosure. In some examples, the electronic device may be at least one of devices such as a smartphone, smartwatch, desktop computer, laptop, virtual reality terminal, augmented reality terminal, wireless terminal, and laptop computer. The electronic device has communication capabilities and can access wired or wireless networks. The term "electronic device" can refer to one of multiple terminals; those skilled in the art will understand that the number of such terminals may be more or less. In some examples, the electronic device can receive image information of the wafer to be inspected based on the accessed wired or wireless network. It is understood that the electronic device undertakes the computational and processing work of the technical solution of this disclosure, and the embodiments of this disclosure do not limit this aspect.

[0119] It should be understood that the above-described device embodiments are merely illustrative, and the device disclosed herein can be implemented in other ways. For example, the division of units / modules in the above embodiments is only a logical functional division, and there may be other division methods in actual implementation. For example, multiple units, modules, or components may be combined, integrated into another system, or some features may be ignored or not executed.

[0120] Furthermore, unless otherwise specified, the functional units / modules in the various embodiments of this disclosure can be integrated into one unit / module, or each unit / module can exist physically separately, or two or more units / modules can be integrated together. The integrated units / modules described above can be implemented in hardware or as software program modules.

[0121] When integrated units / modules are implemented in hardware, the hardware can be digital circuits, analog circuits, etc. The physical implementation of the hardware structure includes, but is not limited to, transistors, memristors, etc. Unless otherwise specified, the processor can be any suitable hardware processor, such as a CPU, GPU, FPGA, DSP, and ASIC, etc. Unless otherwise specified, the storage unit can be any suitable magnetic or magneto-optical storage medium, such as Resistive Random Access Memory (RRAM), Dynamic Random Access Memory (DRAM), Static Random Access Memory (SRAM), Enhanced Dynamic Random Access Memory (EDRAM), High-Bandwidth Memory (HBM), Hybrid Memory Cube (HMC), etc.

[0122] If the integrated unit / module is implemented as a software program module and sold or used as an independent product, it can be stored in a computer-readable storage device (CMD). Based on this understanding, the technical solution of this disclosure, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a memory and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods of the various embodiments of this disclosure. The aforementioned memory includes various media capable of storing program code, such as a USB flash drive, read-only memory (ROM), random access memory (RAM), portable hard drive, magnetic disk, or optical disk.

[0123] like Figure 12 As shown, the electronic device 1200 may include at least one processor 1210, a memory 1220, and a communication interface 1230.

[0124] The memory 1220 is used to store programs. Specifically, the program may include program code, which includes computer operation instructions.

[0125] The memory 1220 may include high-speed RAM memory, and may also include non-volatile memory, such as at least one disk storage device.

[0126] The processor 1210 is used to execute computer execution instructions stored in the memory 1220 to implement the ingot wire defect detection method described in the foregoing method embodiments. The processor 1210 may be a central processing unit (CPU), an application-specific integrated circuit (ASIC), or one or more integrated circuits configured to implement the embodiments of this disclosure.

[0127] The electronic device 1200 may also include a communication interface 1230, through which it can communicate and interact with external devices. In specific implementations, if the communication interface 1230, memory 1220, and processor 1210 are implemented independently, they can be interconnected via a bus to complete communication. The bus can be an Industry Standard Architecture (ISA) bus, a Peripheral Component Interconnect (PCI) bus, or an Extended Industry Standard Architecture (EISA) bus, etc. Buses can be categorized as address buses, data buses, control buses, etc., but this does not imply that there is only one bus or one type of bus.

[0128] Optionally, in a specific implementation, if the communication interface 1230, memory 1220 and processor 1210 are integrated on a single chip, then the communication interface 1230, memory 1220 and processor 1210 can communicate through an internal interface.

[0129] This disclosure also provides a computer-readable storage medium, which may include various media capable of storing program code, such as a USB flash drive, a portable hard drive, a read-only memory, a random access memory, a disk, or an optical disk. Specifically, the computer-readable storage medium stores program instructions, which are used for the crystal rod wire defect detection method in the above embodiments.

[0130] This disclosure also provides a computer program product including computer instructions stored in a computer-readable storage medium; a processor of an electronic device reads the computer instructions from the computer-readable storage medium and executes the computer instructions, causing the electronic device to perform the ingot wire defect detection method of the above embodiments.

[0131] Those skilled in the art will recognize that the functions described in the embodiments of this disclosure in one or more of the foregoing examples can be implemented using hardware, software, firmware, or any combination thereof. When implemented in software, these functions can be stored in a computer-readable medium or transmitted as one or more instructions or code on a computer-readable medium. Computer-readable media include computer storage media and communication media, wherein communication media include any medium that facilitates the transfer of a computer program from one place to another. Storage media can be any available medium that can be accessed by a general-purpose or special-purpose computer.

[0132] In the above embodiments, the descriptions of each embodiment have their own emphasis. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions of other embodiments. The technical features of the above embodiments can be combined arbitrarily. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as the combination of these technical features does not contradict each other, it should be considered within the scope of this specification.

[0133] Other embodiments of this disclosure will readily occur to those skilled in the art upon consideration of the specification and practice of the invention applied herein. This disclosure is intended to cover any variations, uses, or adaptations of this disclosure that follow the general principles of this disclosure and include common knowledge or customary techniques in the art not claimed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of this disclosure are indicated by the following claims.

[0134] It should be understood that this disclosure is not limited to the precise structures described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The scope of this disclosure is limited only by the appended claims.

Claims

1. A method for detecting wire defects in a crystal rod, characterized in that, include: Stress testing is performed on multiple wafers obtained from the crystal rod to obtain defective wafers and determine the stress points on the defective wafers; Obtain the projection line segment of the line connecting the stress points between any two defective wafers onto the radial plane of the crystal rod; In response to the projection line segment being parallel to the 110 crystal orientation of the crystal rod, the angle between the stress point line and the radial plane is determined; If the included angle is equal to a preset value within a threshold range, it is determined that the crystal rod has a line defect; The method further includes: Obtain the positional information of the two defective wafers on the original ingot; The starting and ending positions of the line defect on the crystal rod are determined based on the position information, the included angle, and the projected line segment. The step of determining the start and end positions of the line defect on the crystal rod based on the position information, the included angle, and the projected line segment includes: Obtain the orthographic projection of the defective wafer onto the radial plane of the crystal rod; Extend the projected line segment until it intersects the edge of the orthographic projection of the wafer to obtain two extended line segments; Establish a rectangular coordinate system in the radial plane of the crystal rod, and determine the coordinates of the endpoints of the extended line segment; The lengths of the two extended segments are determined based on the endpoint coordinates of the extended segments, and the height information of the two extended segments corresponding to the axial direction of the crystal rod is determined based on the lengths of the two extended segments respectively. The starting position and the ending position are determined based on the height information and the position information.

2. The method according to claim 1, characterized in that, The step of responding to the projection line segment being parallel to the 110 crystal orientation of the crystal rod and determining the angle between the stress point line and the radial plane includes: Determine the spacing between the two defective wafers on the original ingot; The included angle is determined based on the interval and the length of the projected line segment.

3. The method according to claim 1, characterized in that, The method further includes: A predetermined number of wafers are obtained between the starting position and the ending position of the crystal rod, and stress detection is performed on the wafers to obtain defective wafers; If the number of defective wafers meets a preset condition, the portion of the crystal rod between the start position and the end position is determined to be defective.

4. The method according to claim 1, characterized in that, The method further includes: If the number of defective wafers is 1, it is determined that the crystal rod does not have line defects. If there are multiple defective wafers, then multiple defective wafers can be combined in pairs to obtain multiple sets of defective wafer combinations. If the projected line segments of all the defective wafer combinations are not parallel to the 110 crystal orientation of the crystal rod, it is determined that the crystal rod does not have line defects. If the angle between the stress point line connecting all the defective wafer combinations and the radial plane is not equal to the preset value within a threshold range, it is determined that the crystal rod does not have line defects.

5. The method according to claim 1, characterized in that, The preset value is 54.74 degrees.

6. A crystal rod wire defect detection device, characterized in that, include: The detection module is used to perform stress detection on multiple wafers obtained from the crystal rod to obtain defective wafers and determine the stress points on the defective wafers. The acquisition module is used to acquire the projection line segment of the stress point connection between any two defective wafers onto the radial plane of the crystal rod. A determining module is used to determine the angle between the stress point line and the radial plane in response to the projection line segment being parallel to the 110 crystal orientation of the crystal rod. The determination module is used to determine that the crystal rod has a line defect when the included angle is equal to a preset value within a threshold range; The crystal rod wire defect detection device is also used for: Obtain the positional information of the two defective wafers on the original ingot; The starting and ending positions of the line defect on the crystal rod are determined based on the position information, the included angle, and the projected line segment. The step of determining the start and end positions of the line defect on the crystal rod based on the position information, the included angle, and the projected line segment includes: Obtain the orthographic projection of the defective wafer onto the radial plane of the crystal rod; Extend the projected line segment until it intersects the edge of the orthographic projection of the wafer to obtain two extended line segments; Establish a rectangular coordinate system in the radial plane of the crystal rod, and determine the coordinates of the endpoints of the extended line segment; The lengths of the two extended segments are determined based on the endpoint coordinates of the extended segments, and the height information of the two extended segments corresponding to the axial direction of the crystal rod is determined based on the lengths of the two extended segments respectively. The starting position and the ending position are determined based on the height information and the position information.

7. An electronic device, characterized in that, The electronic device includes a processor and a memory; the processor is configured to execute instructions stored in the memory to implement the rod wire defect detection method as described in any one of claims 1 to 5.

8. A computer storage medium, characterized in that, The storage medium stores at least one instruction, which is executed by a processor to implement the rod wire defect detection method as described in any one of claims 1 to 5.

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