A substrate bad point repair method and repair device

Abstract

The application discloses a kind of repair method and repair device for substrate bad point, the method includes: the chip on substrate is tested, and the bad chip is removed and marked bad chip position, obtains bad chip distribution image;Prepare temporary carrier plate, cover adhesive film on temporary carrier plate;According to bad chip distribution image etching adhesive film, form temporary carrier film on temporary carrier plate;Adhere metal layer of pre-set thickness on temporary carrier film;Temporary carrier plate is aligned and attached on substrate, and through the laser of first pre-set wave band, the metal layer is supplemented on the installation position corresponding to bad chip;Through the laser of second pre-set wave band, remove temporary carrier film.The repair method is attached by setting temporary carrier film with laser reaction glue, by soldering on laser reaction glue, the vacant position on substrate is supplemented with soldering, so as to improve the welding stability of chip replacement, improve the overall reliability of display module after bad point repair.

Description

Technical Field

[0001] This invention mainly relates to the field of display module technology, and specifically to a method and apparatus for repairing dead pixels on a substrate. Background Technology

[0002] After the current Micro LED full-color display module completes the chip bonding, it is necessary to test the chips on the display module to make them light up. For defective chips that cannot be lit up or have appearance defects, it is necessary to remove the defective chips with laser and replace them with new chips in the corresponding empty positions.

[0003] Because the soldering and removal of chips cause loss of metal solder, the amount of metal solder remaining in the vacant position after removing defective chips by laser is small. This leads to insufficient soldering stability between the chip and the substrate when chip replacement is performed later, resulting in a decrease in the overall reliability of the display module after defect repair. Summary of the Invention

[0004] The purpose of this invention is to overcome the shortcomings of the prior art and propose a method and apparatus for repairing defective pixels on a substrate. The repair method involves setting a temporary carrier film with laser reactive adhesive, attaching solder to the laser reactive adhesive, and filling the missing positions on the substrate with solder, thereby improving the welding stability of chip filling and improving the overall reliability of the display module after defective pixel repair.

[0005] This invention proposes a method for repairing defects on a substrate, the method comprising:

[0006] Perform a lighting test on the chips on the substrate, remove defective chips and mark their locations, and obtain an image showing the distribution of defective chips;

[0007] Prepare a temporary carrier plate and cover it with an adhesive film;

[0008] The adhesive film is etched according to the defective chip distribution image to form a temporary carrier film on the temporary carrier.

[0009] A metal layer of a predetermined thickness is adhered to a temporary carrier film;

[0010] The temporary carrier board is aligned and attached to the substrate, and a metal layer is added at the corresponding mounting position of the defective chip using a laser of the first preset wavelength.

[0011] The temporary substrate is removed by laser in the second preset wavelength band.

[0012] Furthermore, the step of performing a lighting test on the chips on the substrate, removing defective chips and marking their locations, and obtaining a distribution image of the defective chips includes:

[0013] The appearance and illumination tests are performed using AOI equipment to determine the location of defective chips and output a distribution image of the defective chips at their specific locations.

[0014] Furthermore, the repair method also includes:

[0015] Defective chips are removed by laser, with the laser wavelength ranging from 248nm to 1064nm.

[0016] Furthermore, the preparation of the temporary carrier plate, including covering the temporary carrier plate with an adhesive film, comprises:

[0017] The adhesive film is formed by spin-coating and curing on a temporary carrier plate. The thickness difference between any two points on the adhesive film is Δh, and the value of Δh is within the range of Δh ≤ 3 μm.

[0018] Furthermore, the step of etching the resist film according to the defective chip distribution image to form a temporary carrier film on the temporary carrier includes:

[0019] A temporary carrier film is formed by ICP etching, and the temporary carrier film includes several adhesive film protrusions.

[0020] Furthermore, the size of the adhesive film protrusion is a, and the size of the corresponding defective chip is b;

[0021] The constraint relationship between a and b is: 2μm≤ab≤3μm.

[0022] Furthermore, the film material is a vaporized adhesive, and the light transmittance of the vaporized adhesive is <5%.

[0023] Furthermore, the adhesion of a metal layer of a predetermined thickness onto the temporary carrier film includes:

[0024] The adhesive film protrusions are subjected to HMDS adhesion enhancement treatment, and a metal layer is deposited on the adhesive film protrusions to form a metal layer.

[0025] Furthermore, the metal layer thickness is h1, the residual solder thickness at the defective chip soldering site is h2, and the chip electrode thickness is h3. The constraint relationship between h1, h2, and h3 is: h3≤h1+h2≤2h3.

[0026] Furthermore, the adhesive film thickness is h4, and the distance from the top surface of the chip to the substrate surface after bonding is h5. The constraint relationship between h1, h4 and h5 is: h1 + h4 > h5.

[0027] Furthermore, the laser wavelength of the first preset wavelength band is 980nm, or the laser wavelength of the first preset wavelength band is 1080nm.

[0028] Furthermore, the second preset wavelength band is 355nm.

[0029] Furthermore, the method for repairing defects on a substrate also includes:

[0030] A secondary bonding between the chip and the substrate is achieved through laser welding.

[0031] The present invention also provides a substrate defect repair device, the repair device being used to perform the repair method, comprising: a temporary carrier plate, a temporary carrier film located on the bottom surface of the temporary carrier plate, and a metal layer disposed on the temporary carrier film;

[0032] The temporary carrier film is provided with a plurality of adhesive film protrusions, and the plurality of adhesive film protrusions are arranged in a patterned array based on the location of the defective points on the substrate.

[0033] This invention proposes a method and apparatus for repairing defective pixels on a substrate. The repair method involves setting a temporary carrier film with laser reactive adhesive, attaching solder to the laser reactive adhesive, and filling the missing positions on the substrate with solder, thereby improving the welding stability of chip replacement and enhancing the overall reliability of the display module after defective pixel repair. Attached Figure Description

[0034] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0035] Figure 1 This is a flowchart of a method for repairing defects on a substrate, as described in an embodiment of the present invention.

[0036] Figure 2 This is a schematic diagram of the structure of the substrate defect repair device in an embodiment of the present invention;

[0037] Figure 3 This is a schematic diagram of the substrate solder repair status in an embodiment of the present invention;

[0038] Figure 4 This is a schematic diagram of the substrate solder repair process in an embodiment of the present invention. Detailed Implementation

[0039] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0040] Figure 1 A flowchart of a method for repairing defects on a substrate, according to an embodiment of the present invention, is shown. The method includes:

[0041] S11: Perform a lighting test on the chips on the substrate, remove defective chips and mark their locations, and obtain an image showing the distribution of defective chips.

[0042] The step of performing a lighting test on the chips on the substrate, removing defective chips and marking their locations, and obtaining a distribution image of the defective chips includes:

[0043] Appearance and power-on tests are performed using AOI equipment. The AOI equipment acquires the appearance image of the display module and the image data of the display module when it is powered on. By comparing and analyzing the acquired image data with preset image data, the distribution of defective pixels on the substrate of the display module is obtained, that is, the location of defective chips is determined, and the distribution image of defective chips is output for the specific location of the defective chips.

[0044] Furthermore, the AOI equipment is an Auto Optical Inspection (AOI) machine, which uses imaging technology to compare the test object with a standard image to determine whether the test object meets the standard.

[0045] Specifically, optical vision inspection can quickly obtain the distribution location of defective chips on the display module substrate, and based on the distribution location of defective chips on the display module substrate, the position of the defective chips on the display module substrate can be determined.

[0046] Specifically, the repair method further includes: removing the defective chip with a laser, and applying a laser of a preset wavelength to the solder joint between the defective chip and the substrate, causing the solder on the solder pads of the defective chip and the substrate to melt, thereby causing the defective chip to detach from the substrate.

[0047] Furthermore, the laser wavelength is between 248nm and 1064nm. The laser wavelength can be one of the following: 248nm, 266nm, 355nm, 980nm, 1064nm, etc. Selecting different laser wavelengths for pad ablation according to the actual chip type can improve the ease of chip removal and reduce the risk of damage to the chip and substrate.

[0048] S12: Prepare a temporary carrier plate and cover it with an adhesive film.

[0049] Specifically, the preparation of the temporary carrier plate, including covering the temporary carrier plate with an adhesive film, includes:

[0050] The adhesive film is formed by spin coating and curing on a temporary carrier plate. The temporary carrier plate is clamped on a spin coater, and a preset amount of laser reactive adhesive is dripped onto the center area of ​​the temporary carrier plate. By rotating the temporary carrier plate at high speed, the laser reactive adhesive can be evenly coated on the temporary carrier plate and cured to form the adhesive film.

[0051] Furthermore, by spin coating the adhesive film onto the temporary carrier, the adhesive film can be quickly prepared on the temporary carrier and the consistency of the adhesive film's quality distribution can be ensured, so that the laser-reactive adhesive can be evenly distributed on the temporary carrier.

[0052] The thickness difference between any two points on the adhesive film is Δh, and the value of Δh is within the range of Δh≤3μm. That is, the consistency of the thickness of the adhesive film is improved by spin coating, so that the surface of the adhesive film is flat, thereby ensuring the reliability of the chip repair.

[0053] S13: Etch the adhesive film according to the defective chip distribution image to form a temporary carrier film on the temporary carrier.

[0054] Specifically, the process involves etching the adhesive film based on the defective chip distribution image to form a temporary carrier film on a temporary substrate, and then etching the temporary carrier film using ICP etching. The temporary carrier film includes several adhesive film protrusions.

[0055] Furthermore, the inductively coupled plasma (ICP) etching method involves using a vacuum low-pressure environment where the radio frequency output generated by the ICP RF power supply is sent to a ring coupling coil. A certain proportion of mixed etching gas is coupled and discharged to generate high-density plasma. Under the RF action of the lower electrode, the plasma bombards the substrate surface, breaking the chemical bonds of the semiconductor material in the patterned area of ​​the substrate. The chemical bonds are then broken, and the plasma reacts with the etching gas to generate volatile substances that detach from the substrate in gaseous form.

[0056] Specifically, based on the defective chip distribution image, the corresponding distribution positions of the defective chips are displayed on the adhesive film of the temporary carrier board. The remaining positions other than the defective chips are etched by ICP to form a number of adhesive film protrusions, and the number of adhesive film protrusions are set in a one-to-one correspondence with the positions of the number of defective chips.

[0057] Specifically, the size of the adhesive film protrusion is 'a', and the size of the corresponding defective chip is 'b'. The constraint relationship between 'a' and 'b' is: 2μm≤ab≤3μm. That is, the size of the adhesive film protrusion is slightly larger than the size of the defective chip. This prevents the adhesive film protrusion from shifting outside the substrate gap due to the misalignment error when the temporary carrier board is bonded to the substrate of the display module, thereby ensuring the stability of the adhesive film protrusion bonding of the temporary carrier board.

[0058] Furthermore, the adhesive film is made of vaporized adhesive, which can vaporize and dissipate after reacting with a laser of a preset wavelength, thereby achieving the transfer of solder.

[0059] Furthermore, the light transmittance of the vaporized adhesive is less than 5%, so that the laser can directly act on the adhesive film protrusions, and the adhesive film protrusions can completely react with the laser, avoiding the laser from penetrating the adhesive film protrusions and directly acting on the display module substrate.

[0060] S14: Adhere a metal layer of a predetermined thickness onto a temporary carrier film.

[0061] Specifically, adhering a metal layer of a predetermined thickness to a temporary carrier film includes: performing HMDS adhesion enhancement treatment on the adhesive film protrusions, and depositing a metal layer on the adhesive film protrusions.

[0062] Furthermore, the hexamethyldisilazane (hmds) treatment can increase the adhesion of the surface junction structure and the subsequent photoresist structure, thereby improving the connection stability between the metal layer 3 and the adhesive film protrusion.

[0063] Specifically, an adhesion enhancement treatment is performed on the adhesive film protrusions. A metal layer is deposited on the adhesion enhancement treatment adhesive film protrusions by vapor deposition so that the adhesive film protrusions can adhere to the blank positions of the substrate and perform metal solder replenishment operations.

[0064] Specifically, the thickness of the metal layer is h1, the thickness of the residual solder at the defective chip soldering position is h2, and the thickness of the chip electrode is h3. The constraint relationship between h1, h2, and h3 is: h3≤h1+h2≤2h3. By setting a metal layer of preset thickness, after the metal layer combines with the residual solder at the vacant position on the display module substrate, it can ensure that there is sufficient metal solder in the vacant position on the substrate to realize the soldering and installation of the chip.

[0065] Specifically, after removing defective chips from the substrate of the display module using a laser, the thickness of residual solder in the vacancy position is measured using a laser focusing microscope or a profilometer. Based on the thickness of the residual solder and the thickness of the chip electrode, the vapor deposition thickness of the metal layer on the adhesive film protrusion can be calculated.

[0066] Furthermore, in this embodiment, after removing the defective chip on the display module substrate, the thickness h2 of the residual solder at the resulting vacancy position is between 0.5 μm and 1 μm, and the thickness h1 of the metal layer deposited on the adhesive film protrusion is between 2.5 μm and 3 μm.

[0067] Specifically, a metal layer is vapor-deposited on the adhesive film protrusion. The material of the metal layer can be one of the following metal solders: aluminum (Al), titanium (Ti), platinum (Pt), copper (Au), silver (Ag), nickel-chromium alloy (NiCr). Table 1 shows the vapor deposition parameter requirements for different solder materials. The vapor deposition rate is adjusted according to the different solder materials so that the metal layer can be deposited on the adhesive film protrusion.

[0068] Table 1

[0069]

[0070]

[0071] Furthermore, A is the unit of thickness, angstrom, and the evaporation rate of 4A / s means that the solder material can deposit a metal layer with a thickness of 4 angstroms on the film per second.

[0072] Specifically, the adhesive film thickness is h4, and the distance from the top surface of the chip to the substrate surface after bonding is h5. The constraint relationship between h1, h4, and h5 is: h1 + h4 > h5. When the temporary carrier board is bonded to the substrate of the display module, the thickness of the adhesive film protrusion and the metal layer is greater than the height of the chip on the substrate of the display module, thus avoiding direct contact between the temporary carrier board and the chip of the display module and reducing the risk of damage to the display module chip.

[0073] S15: Align and attach the temporary carrier board to the substrate, and use a laser of the first preset wavelength band to add a metal layer at the mounting position corresponding to the defective chip.

[0074] Specifically, the laser wavelength of the first preset wavelength band can be 980nm, or it can be 1080nm. The temporary carrier board is attached to the substrate of the display module, so that a number of adhesive film protrusions are inserted into the vacant positions of the display module substrate. The high-wavelength laser penetrates the adhesive film protrusions, so that the laser can directly act on the metal layer, so that the metal layer of the adhesive film protrusions can melt and bond with the residual metal solder in the vacant positions.

[0075] Furthermore, by setting a high-wavelength laser, the temporary carrier film on the temporary carrier plate can be prevented from reacting with the first preset wavelength laser. The first preset wavelength laser can penetrate the temporary carrier film and has greater energy to react with the metal layer on the temporary carrier film, so that the metal layer can melt into the residual solder at the vacancy position.

[0076] S16: Remove the temporary carrier film using a laser in the second preset wavelength band.

[0077] Specifically, the second preset wavelength is 355nm. That is, a laser with a wavelength of 355nm is applied to the temporary carrier film on the temporary carrier plate. The temporary carrier film can react with the laser with a wavelength of 355nm and vaporize and dissipate under the action of the laser, thereby realizing the separation of the metal layer, the temporary carrier plate and the temporary carrier film, completing the transfer of the metal layer, and repairing the metal solder in the empty position of the display module, so that the metal solder in the empty position on the substrate of the display module can meet the welding and bonding requirements of the chip.

[0078] Specifically, the method for repairing substrate defects further includes: achieving secondary bonding between the chip and the substrate through laser welding. New chips are bonded to the transfer substrate according to the distribution image of the defective chips, corresponding to the distribution positions of the defective chips. The transfer substrate and the substrate of the display module are then aligned, such that several new chips are correspondingly bonded to the vacant positions on the display module substrate, and the electrode pads of the chips are in contact with the metal solder at the vacant positions. A laser of a third preset wavelength is applied to the contact position between the new chips and the metal solder at the vacant positions, causing the electrode pads of the new chips to be welded to the vacant positions on the display module substrate based on the metal solder.

[0079] Furthermore, the third preset wavelength band is between 980nm and 1064nm. In this embodiment, the third preset wavelength band is preferably 980nm and 1064nm, which is consistent with the laser of the first preset wavelength band, thereby improving the convenience of equipment debugging.

[0080] Furthermore, by selecting a high-wavelength laser to act on the metal solder in the vacant position, the metal solder can be melted and welded to the electrode pads of the new chip.

[0081] This invention provides a method for repairing defective chips on a substrate. The method involves preparing and etching a temporary carrier film on a temporary carrier board based on a distribution image of defective chips on a display module substrate. A metal layer is deposited on the carrier film to repair the metal solder at the vacant positions on the display module substrate, thereby ensuring the stability of the welding connection when the new chip is bonded to the substrate for the second time.

[0082] Example 2:

[0083] Figure 2 A schematic diagram of the structure of a substrate defect repair device is shown in an embodiment of the present invention. Figure 3A schematic diagram of the substrate solder repair state in an embodiment of the present invention is shown. The repair device is used to perform the repair method, including: a temporary carrier plate 1, a temporary carrier film 2 located on the bottom surface of the temporary carrier plate 1, and a metal layer 3 disposed on the temporary carrier film 2. The temporary carrier film 2 on the temporary carrier plate 1 is used to support the metal layer 3. The metal layer 3 on the temporary carrier film 2 can be attached to the empty position of the display module substrate 4 through the temporary carrier plate 1, so that the metal layer 3 of the temporary carrier film 2 is in contact with the residual metal solder 41 at the empty position.

[0084] Furthermore, the metal layer 3 is deposited on the temporary carrier film 2 of the temporary carrier plate 1 by vapor deposition. According to the material of the residual metal solder 41 at the empty position of the substrate 4 of the display module, a corresponding metal material is selected, and the metal vapor deposition rate is adjusted according to the metal material so that the metal solder is deposited on the temporary carrier film 2 to form the metal layer 3.

[0085] Specifically, the temporary carrier film 2 is provided with a plurality of adhesive film protrusions, and the plurality of adhesive film protrusions are arranged in a patterned array based on the defect positions of the substrate 4, that is, the plurality of adhesive film protrusions can be attached to the corresponding defect positions of the display module substrate 4, so that the metal layer 3 on the adhesive film protrusions can be connected to the residual metal solder 41 at the vacant positions on the display module substrate 4.

[0086] Specifically, Figure 4 The diagram illustrates the substrate solder repair process in an embodiment of the present invention. The temporary carrier plate 1 is attached to the substrate 4 of the display module, such that the temporary carrier film 2 on the temporary carrier plate 1 is attached to the corresponding empty position on the substrate 4, and the metal layer 3 on the temporary carrier film 2 can be attached to the metal solder at the empty position.

[0087] Furthermore, by applying a 1080nm laser to the metal layer 3 of the temporary carrier board 1, the metal layer 3 can be fused and bonded to the residual solder at the vacant position of the substrate 4. By applying a high-wavelength laser to the metal layer 3, the metal layer 3 is heated and melted. By bonding the molten metal material to the residual metal solder 41 on the substrate 4, the residual metal solder 41 at the vacant position of the substrate 4 is repaired and replenished.

[0088] Specifically, after the metal layer 3 is fused to the vacancy position of the substrate 4, a laser with a wavelength of 355nm is applied to the temporary carrier film 2, causing the temporary carrier film 2 to react with the laser, thereby achieving the separation between the metal layer 3 and the temporary carrier plate 1.

[0089] Furthermore, the temporary carrier film 2 on the temporary carrier plate 1 can be made of vaporized adhesive material. The vaporized adhesive material can react with a laser with a wavelength of 355nm and vaporize and dissipate under the action of the laser, so that the metal layer 3 can detach from the connection with the temporary carrier film 2, thereby realizing the transfer of the metal layer 3.

[0090] Furthermore, by setting a temporary carrier film 2 made of vaporized adhesive material, the temporary carrier film 2 can avoid affecting adjacent chips on the substrate 4 during the laser reaction process, thereby improving the reliability of defect repair on the substrate 4.

[0091] Specifically, the repair device also includes a transfer substrate. Based on the bad pixel arrangement image on the display module substrate 4, the transfer substrate carries a number of chips, and the chips are arranged corresponding to the bad pixel positions. By attaching the transfer substrate and the display module substrate 4 together, the chips on the transfer substrate are attached to the corresponding bad pixel positions, and the chips are transferred by laser transfer.

[0092] Furthermore, a 1080nm laser is used to act on the metal solder at the defect location of the display module substrate 4, causing the solder metal at the defect location to melt and be welded and fixed to the chip electrode pads of the transfer substrate, thereby achieving the welding and fixing of the chip to the display module substrate 4.

[0093] Furthermore, the connection between the chip and the transfer substrate is stripped by laser, thereby separating the chip from the transfer substrate and completing the laser transfer operation of the chip.

[0094] This invention provides a substrate defect repair device. The repair device has a metal layer on a temporary carrier film of a temporary carrier board. The patterned temporary carrier film corresponds to the defect location on the substrate, and a metal layer is deposited on the temporary carrier film to repair the metal solder at the defect location on the display module substrate, thereby ensuring the stability of the welding connection when the new chip is bonded to the substrate for the second time.

[0095] Furthermore, the above provides a detailed description of a substrate defect repair method and repair device provided by the embodiments of the present invention. Specific examples have been used to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of the present invention. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of the present invention. Therefore, the content of this specification should not be construed as a limitation of the present invention.

Claims

1. A method for repairing defects on a substrate, characterized in that, The method includes: Perform a lighting test on the chips on the substrate, remove defective chips and mark their locations, and obtain an image showing the distribution of defective chips; Prepare a temporary carrier plate and cover it with an adhesive film; The adhesive film is etched according to the defective chip distribution image to form a temporary carrier film on a temporary carrier board. The temporary carrier film includes a number of adhesive film protrusions. A metal layer of a predetermined thickness is adhered to a temporary carrier film; The temporary carrier board is aligned and attached to the substrate, so that several adhesive film protrusions are inserted into the missing positions of the substrate. A metal layer is added at the mounting position of the defective chip. A laser of the first preset wavelength penetrates the adhesive film protrusions and acts directly on the metal layer, so that the metal layer of the adhesive film protrusions melts and combines with the residual metal solder in the missing position. The temporary carrier film is removed by laser in the second preset wavelength band, and the temporary carrier film is vaporized under the action of the laser to achieve the separation of the metal layer and the temporary carrier plate.

2. The method for repairing defects on a substrate as described in claim 1, characterized in that, The step of performing a lighting test on the chips on the substrate, removing defective chips and marking their locations, and obtaining a distribution image of the defective chips includes: The appearance and illumination tests are performed using AOI equipment to determine the location of defective chips and output a distribution image of the defective chips at their specific locations.

3. The method for repairing defects on a substrate as described in claim 1, characterized in that, The repair method also includes: Defective chips are removed by laser, with the laser wavelength ranging from 248nm to 1064nm.

4. The method for repairing defects on a substrate as described in claim 1, characterized in that, The preparation of the temporary carrier plate, including covering the temporary carrier plate with an adhesive film, comprises: The adhesive film is formed by spin coating and curing on a temporary carrier plate. The thickness difference between any two points on the adhesive film is Δh, and the value of Δh is within the range of Δh≤3μm.

5. The method for repairing defects on a substrate as described in claim 1, characterized in that, The step of etching the adhesive film according to the defective chip distribution image to form a temporary carrier film on the temporary carrier includes: A temporary carrier film is formed by ICP etching.

6. The method for repairing defects on a substrate as described in claim 5, characterized in that, The size of the adhesive film protrusion is a, and the size of the corresponding defective chip is b; The constraint relationship between a and b is: 2μm≤ab≤3μm.

7. The method for repairing defects on a substrate as described in claim 4, characterized in that, The adhesive film is made of vaporized adhesive, and the light transmittance of the vaporized adhesive is less than 5%.

8. The method for repairing defects on a substrate as described in claim 5, characterized in that, The process of adhering a metal layer of a predetermined thickness to a temporary carrier film includes: The adhesive film protrusions are subjected to HMDS adhesion enhancement treatment, and a metal layer is deposited on the adhesive film protrusions to form a metal layer.

9. The method for repairing defects on a substrate as described in claim 8, characterized in that, The thickness of the metal layer is h1, the thickness of the residual solder at the defective chip soldering site is h2, and the thickness of the chip electrode is h3. The constraint relationship between h1, h2, and h3 is: h3≤h1+h2≤2h3.

10. The method for repairing defects on a substrate as described in claim 9, characterized in that, The adhesive film thickness is h4, and the distance from the top surface of the chip to the substrate surface after bonding is h5. The constraint relationship between h1, h4 and h5 is: h1 + h4 > h5.

11. The method for repairing defects on a substrate as described in claim 1, characterized in that, The laser wavelength of the first preset wavelength band is 980nm, or the laser wavelength of the first preset wavelength band is 1080nm.

12. The method for repairing defects on a substrate as described in claim 1, characterized in that, The second preset wavelength band is 355nm.

13. The method for repairing defects on a substrate as described in claim 1, characterized in that, The method for repairing defects in a substrate further includes: A secondary bonding between the chip and the substrate is achieved through laser welding.

14. A substrate defect repair device, characterized in that, The repair device is used to perform the repair method as described in any one of claims 1 to 13, comprising: a temporary carrier plate, a temporary carrier film located on the bottom surface of the temporary carrier plate, and a metal layer disposed on the temporary carrier film; The temporary carrier film is provided with a plurality of adhesive film protrusions, and the plurality of adhesive film protrusions are arranged in a patterned array based on the location of the defective points on the substrate.

Images