Thin film deposition apparatus

Abstract

This application discloses a thin film deposition apparatus, comprising: a gas distribution mechanism, including a spray back plate, a gas equalization plate, a flow equalization plate, and a spray plate arranged sequentially along a first direction; a main body having a reaction chamber, with at least a portion of the gas distribution mechanism located within the reaction chamber; the main body including a chamber cover, the chamber cover being fixedly connected to the spray back plate; a carrier plate for holding the product to be processed; the carrier plate being located within the reaction chamber and on the side of the spray plate opposite to the spray back plate; a second air inlet pipe for conveying inert gas; a second cover plate covering the side of the chamber cover facing the spray back plate, the second cover plate and the chamber cover forming a purge chamber, the outlet of the second air inlet pipe being connected to the purge chamber; a third gap between the chamber cover and the spray back plate, the second cover plate having multiple purge holes for connecting the purge chamber and the third gap. The thin film deposition apparatus of this application is less prone to dust particle contamination on component surfaces.

Description

[0001] This application is a divisional application of Chinese patent application No. 202210325415.0, entitled "Thin Film Deposition Apparatus and Gas Distribution Mechanism Thereof". Technical Field

[0002] This application relates to the field of photovoltaic production technology, and in particular to a thin film deposition apparatus. Background Technology

[0003] With the increasing prevalence of solar power generation, the demand for photovoltaic products is growing, placing higher demands on the equipment used to manufacture them. This requires not only increased production capacity but also larger silicon wafers and higher cell efficiency.

[0004] The heterojunction solar cell process has a theoretical efficiency of over 28%, making it the most efficient process route to date. Furthermore, this process route is simple, with only four steps, which is more than five steps fewer than the mainstream PERC (Passivated Emitter and Rear Cell) and TOPCON (Tunnel Oxide Passivated Contact) processes. It has excellent development prospects.

[0005] The four steps in the heterojunction solar cell process are texturing and cleaning, amorphous silicon thin film deposition, conductive film deposition, and screen printing of electrodes. The amorphous silicon thin film can be deposited using PECVD (Plasma Enhanced Chemical Vapor Deposition).

[0006] In the prior art, some PECVD thin film deposition equipment is prone to dust particle contamination on the surface of components during the process, which can lead to harmful arc discharge. Summary of the Invention

[0007] The main technical problem addressed by this application is to provide a thin film deposition apparatus that can reduce the probability of dust particles accumulating on the surface of components.

[0008] To address the aforementioned technical problems, this application proposes a thin film deposition apparatus, comprising: a gas distribution mechanism, which includes a spray back plate, a gas equalization plate, a flow equalization plate, and a spray plate arranged sequentially along a first direction; wherein the spray back plate and the spray plate together form a spray head, the gas equalization plate and the flow equalization plate are located inside the spray head, a first gas equalization chamber is formed between the flow equalization plate and the spray back plate, and a second gas equalization chamber is formed between the flow equalization plate and the spray plate, with the gas equalization plate disposed within the first gas equalization chamber; the spray back plate has a first through hole at a position facing the gas equalization plate; the gas equalization plate has a through gas equalization hole; the flow equalization plate has a through flow equalization hole, the flow equalization hole being used to allow process gas to enter the second gas equalization chamber from the first gas equalization chamber. Two equalization chambers; a spray plate with through spray holes; a main body with a reaction chamber inside, at least part of the gas distribution mechanism located inside the reaction chamber; the main body includes a chamber cover, which is fixedly connected to the spray back plate; a carrier plate for holding the product to be processed; the carrier plate is located inside the reaction chamber and on the side of the spray plate away from the spray back plate; a second air inlet pipe for conveying inert gas; a second cover plate covering the side of the chamber cover facing the spray back plate, the second cover plate and the chamber cover forming a purging chamber, the outlet of the second air inlet pipe being connected to the purging chamber; a third gap between the chamber cover and the spray back plate, the second cover plate having multiple purging holes for connecting the purging chamber and the third gap.

[0009] The spray back plate is equipped with a heating element, which is used to heat the spray back plate, spray plate, flow equalization plate and the gas inside them.

[0010] The lead wires of the spray backplate heating section are connected to a filter to eliminate the mutual influence between the high-frequency voltage of the spray backplate and the heating section and the temperature sensor of the heating section.

[0011] The cavity cover is equipped with an insulating sleeve, and the lead wires pass through the insulating sleeve. The insulating sleeve is made of high-temperature resistant insulating material and is used to prevent the high-frequency voltage of the lead wires from being transmitted to the cavity cover.

[0012] The device also includes a second connecting assembly for connecting the chamber cover and the spray back plate. The second connecting assembly includes: a second fastener; a first insulating ring located between the chamber cover and the spray back plate, with the second fastener passing through the chamber cover and the first insulating ring and fixed to the spray back plate; a first spacer located between the second fastener and the chamber cover; and a first cover plate located on the side of the chamber cover away from the spray back plate and connected to the first spacer.

[0013] A third insulating ring is provided between the side of the second fastener away from the spray back plate and the first cover plate.

[0014] The first cover plate presses against the third insulating ring.

[0015] The beneficial effects of this application are as follows: Unlike existing technologies, this application provides a thin film deposition apparatus, comprising a gas distribution mechanism, a main body, a carrier plate, a second gas inlet pipe, and a second cover plate. The gas distribution mechanism includes a spray back plate and a spray plate. The main body has a reaction chamber. At least a portion of the gas distribution mechanism is located within the reaction chamber. The main body includes a chamber cover. The chamber cover and the spray back plate are fixedly connected. The carrier plate is used to hold the product to be processed. The carrier plate is located within the reaction chamber and on the side of the spray plate opposite to the spray back plate. The second gas inlet pipe is used to transport inert gas. The second cover plate is disposed on the side of the chamber cover facing the spray back plate. The second cover plate and the chamber cover form a purge chamber. The outlet of the second gas inlet pipe is connected to the purge chamber. Through the above arrangement, inert gas can enter the purge chamber from the second gas inlet pipe, blowing away the process gas and preventing the process gas from depositing on the lower surface of the chamber cover to form dust particle contamination, thereby reducing the probability of arcing discharge in the thin film deposition apparatus. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort, wherein: Figure 1 This is a schematic diagram of the structure of a thin film deposition apparatus and its gas distribution mechanism provided in this embodiment. Figure 2 This is a schematic diagram of the structure of a first connecting component provided in this embodiment; Figure 3 This is a schematic diagram of the structure of an insulating board assembly provided in this embodiment; Figure 4 This is a schematic diagram of the structure of a third connecting component provided in this embodiment.

[0017] Explanation of reference numerals in the attached figures: 1. Cavity cover; 9. Second fastener; 10. First air inlet pipe; 11. Air inlet flange; 13. First insulating ring; 14. Second insulating ring; 15. Third fastener; 16. Insulating sleeve; 17. Gasket; 18. First insulating plate; 19. Second isolator; 20. Second insulating plate; 21. First screw; 22. Spray plate; 23. Flow equalization plate; 24. Boss; 25. Second air equalization chamber; 26. Spray hole; 27. First connecting assembly; 28. Flow equalization hole; 29. ​​Air equalization plate; 30. Spacer ring; 31. 33. First air distribution chamber; 35. Spray back plate; 36. Third cover plate; 37. First fastener; 38. Second screw; 39. Positioning ring; 40. Angled hole; 41. Air inlet; 42. Washer; 43. Insulating cap; 44. First sharp corner; 45. Third sharp corner; 46. Second sharp corner; 47. Side line; 48. First ring portion; 49. Second ring portion; 50. First cavity; 51. First gap; 52. Second gap; 53. Common edge; 54. Angled edge; 55. Side line; 57. Third gap; X: First direction; Y: Second direction. Detailed Implementation

[0018] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0019] It should be noted that when an element is referred to as being "set on" another element, it can be directly on the other element or may be interposed with another element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or may be interposed with another element. The terms "vertical," "horizontal," "left," "right," and similar expressions used herein are for illustrative purposes only and do not represent the only possible implementations.

[0020] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0021] Please see Figure 1This application provides a gas distribution mechanism for a thin film deposition apparatus, comprising a spray back plate 33, a gas equalization plate 29, a flow equalization plate 23, and a spray plate 22 arranged sequentially along a first direction X.

[0022] The spray back plate 33 and spray plate 22 together form a spray head, with a gas equalization plate 29 and a flow equalization plate 23 located inside the spray head. A first gas equalization chamber 31 is formed between the flow equalization plate 23 and the spray back plate 33, and a second gas equalization chamber 25 is formed between the flow equalization plate 23 and the spray plate 22. The gas equalization plate 29 is disposed within the first gas equalization chamber 31. The spray back plate 33 has a first through hole facing the gas equalization plate 29. The gas equalization plate 29 has a through gas equalization hole (not shown). The flow equalization plate 23 has a through flow equalization hole 28, which allows the process gas to enter the second gas equalization chamber 25 from the first gas equalization chamber 31. The spray plate 22 has a through spray hole 26.

[0023] The gas distribution mechanism of the thin film deposition apparatus provided in this application allows process gas to enter the reaction chamber and react with the product to be processed by passing through the gas equalization hole, the flow equalization hole 28 and the spray hole 26 in sequence. Therefore, this gas distribution mechanism can improve the uniformity of gas distribution, thereby improving the uniformity of thin film deposition.

[0024] In this embodiment, the area of ​​the gas equalization plate 29 is greater than or equal to the area of ​​the first through hole, thereby enabling the equalization of all process gases flowing out of the first through hole. The area mentioned in this embodiment refers to the area of ​​the surface perpendicular to the first direction X. Preferably, the centerlines of the spray back plate 33, the gas equalization plate 29, the flow equalization plate 23, and the spray plate 22 can coincide, thereby ensuring a symmetrical distribution of the gas distribution mechanism and more uniform gas distribution.

[0025] Preferably, the air distribution mechanism further includes a first air inlet pipe 10 and an air inlet flange 11. The outlet of the first air inlet pipe 10 is connected to the air inlet flange 11. The first air inlet pipe 10 and the air inlet flange 11 are located on the side of the spray back plate 33 opposite to the air distribution plate 29. The first through hole of the spray back plate 33 and the inner wall of the air inlet flange 11 form an air inlet 40. In the first direction X, the diameter of the air inlet 40 gradually increases, that is, the air inlet flange 11 is conical. The air inlet flange 11 can be a water-cooled flange. A spacer 30 is provided between the air distribution plate 29 and the spray back plate 33 to fix the air distribution plate 29 and the spray back plate 33 together.

[0026] In this embodiment, in the first direction X, the air equalization hole and the flow equalization hole 28 are staggered, and the flow equalization hole 28 and the spray hole 26 are staggered, thereby preventing local small holes from overlapping and causing uneven air distribution, and further improving the uniformity of air distribution.

[0027] The process gas enters the inlet 40 through the first inlet pipe 10 and the inlet flange 11, and then enters the first gas equalization chamber 31. The flow velocity in the first inlet pipe 10 is relatively high. As the process gas enters the inlet flange 11, the volume gradually decreases and expands, and the gas diffuses in all directions, thus slowing down the velocity and forming the first gas equalization layer.

[0028] The process gas continues to flow to the gas equalization plate 29. There is a small gap between the gas equalization plate 29 and the spray back plate 33. After being blocked by the gas equalization plate 29, the process gas diffuses to the surroundings through the gap. At the same time, the process gas can also diffuse downwards from the gas equalization holes. The gas equalization plate 29 forms a second gas equalization layer.

[0029] Subsequently, the process gas diffuses and fills the first gas equalization chamber 31, gradually becoming uniform, and then flows into the second gas equalization chamber 25 through the equalization holes 28 of the flow equalization plate 23, forming a third gas equalization layer.

[0030] Finally, the process gas diffuses and fills the second uniform gas chamber 25, becoming more uniform, and then is sprayed out from the spray holes 26 of the spray plate 22, flowing evenly to the product to be processed on the surface of the carrier plate, thus forming the fourth uniform gas layer in the spray plate 22.

[0031] This embodiment ensures excellent gas distribution uniformity of the gas distribution mechanism through the above four gas distribution layers, thereby improving the flow field uniformity of process gas in the thin film deposition apparatus and improving the uniformity of thin film deposition.

[0032] In this embodiment, a uniform plasma field is formed between the lower surface of the spray plate 22 and the carrier plate. This requires a uniform gap between the lower surface of the spray plate 22 and the carrier plate, thus necessitating a high degree of flatness on the lower surface of the spray plate 22 and minimal deformation. However, the spray plate 22 has a large area (for example, its surface perpendicular to the first direction X can be square with a side length of 2 to 5 meters) and a high temperature (for example, 200 to 300°C), making it highly susceptible to thermal deformation or sagging.

[0033] Therefore, the gas distribution mechanism also includes at least two first connecting components 27. The first connecting components 27 are located around the gas equalization plate 29 and are approximately located in the middle of the flow equalization plate 23 and the spray plate 22. The first connecting components 27 can fix the flow equalization plate 23, the spray plate 22 and the spray back plate 33 together, which can prevent the middle part of the flow equalization plate 23 and the spray plate 22 from sagging and deforming, ensure the flatness of the lower surface of the spray plate 22, improve the electric field uniformity and improve the film deposition uniformity.

[0034] Specifically, such as Figure 2As shown, the first connecting assembly 27 may include a first fastener 36. The spray back plate 33 has a second through hole for mounting the first fastener 36, the flow equalizing plate 23 has a third through hole for the first fastener 36 to pass through, and the spray plate 22 has a fourth through hole for mounting the first fastener 36. The first fastener 36 may be a screw or other fastener with a fixing function. A third cover plate 35 may be provided on the side of the spray back plate 33 opposite to the spray plate 22. The third cover plate 35 covers the second through hole and can provide reinforcement to the spray back plate 33 at that location.

[0035] The fourth through hole coincides with a spray hole 26. Installing the first fastener 36 at this location would cause uneven distribution of process gas at that position. Therefore, the spray plate 22 has at least two oblique holes 39 around the fourth through hole, and the extension direction of the oblique holes 39 intersects the first direction X. One end of the oblique hole 39 communicates with the cavity between the flow equalization plate 23 and the spray plate 22 (i.e., the second gas equalization cavity 25), and the other end communicates with the fourth through hole. Thus, the process gas can enter the spray hole 26 below the first fastener 36 through the oblique holes 39, eliminating the influence of the first fastener 36 and ensuring uniform gas distribution.

[0036] Furthermore, to prevent the spray back plate 33, the flow equalizer 23, and the spray plate 22 from being compressed and deformed when the first fastener 36 is tightened, the first connecting assembly 27 also includes a boss 24 and a positioning ring 38. The boss 24 is located between the spray back plate 33 and the flow equalizer 23. In the first direction X, the height of the boss 24 is greater than or equal to the distance between the spray back plate 33 and the flow equalizer 23. The boss 24 has a fifth through hole for the first fastener 36 to pass through. The positioning ring 38 is located between the flow equalizer 23 and the spray plate 22. In the first direction X, the height of the positioning ring 38 is greater than or equal to the distance between the flow equalizer 23 and the spray plate 22. The positioning ring 38 has a sixth through hole for the first fastener 36 to pass through. By providing the boss 24 and the positioning ring 38, the gap between the spray back plate 33, the flow equalizer 23, and the spray plate 22 in the first direction X can be fixed when the first fastener 36 is tightened, preventing them from being bent or deformed. The positioning ring 38 can be fixedly connected to the flow equalization plate 23 and the boss 24 by the second screw 37.

[0037] In this embodiment, a high-frequency voltage is fed from the conductive plate to the spray back plate 33, and then conducted to the spray plate 22. The lower surface of the spray plate 22 forms a plasma field with the grounded carrier plate. The spray back plate 33, the spray plate 22, and their internal metal parts all carry high-frequency voltage, which can easily form unnecessary and harmful arcing discharges with the surrounding metal parts, especially at sharp edges and corners. Therefore, special insulation treatment is required.

[0038] like Figure 1 and Figure 3As shown, this air distribution mechanism also includes an insulating plate assembly located around the spray plate 22 and the spray back plate 33. The insulating plate assembly can be fixedly installed on the spray plate 22. In the first direction X, one end of the insulating plate assembly is aligned with the surface of the spray back plate 33 facing away from the spray plate 22, and the other end extends beyond the surface of the spray plate 22 facing away from the spray back plate 33.

[0039] Specifically, the insulating plate assembly includes a first insulating plate 18 and a second insulating plate 20. The first insulating plate 18 extends along a first direction X, and the second insulating plate 20 extends perpendicular to the first direction X. The first insulating plate 18 and the second insulating plate 20 have high-temperature resistance. The first insulating plate 18 and the second insulating plate 20 can completely cover the edges and sharp corners of the spray plate 22. The common edge 53 of the nested first insulating plate 18 and the second insulating plate 20 can cover the first sharp corner 43 of the spray plate 22. The edge lines 46 and 47 of the second insulating plate 20 can cover the second sharp corner 45 of the spray plate 22, and the edge lines 47 and 55 of the second insulating plate 20 can cover the third sharp corner 44 of the spray plate 22. The inclined edge 54 of the second insulating plate 20 smoothly transitions from the bottom edge of the second insulating plate 20 to the bottom edge of the spray plate 22, preventing disturbance to the gas flow and preventing the formation of eddies.

[0040] Furthermore, the second insulating plate 20 can be mounted to the spray plate 22 using the first screw 21. Since the first screw 21 is made of metal and is connected to the spray plate 22 which carries a high-frequency voltage, the first screw 21 also carries a high-frequency voltage. Therefore, the head of the first screw 21 has a threaded hole, and the fine threads inside the insulating cap 42 secure the insulating cap 42 to the head of the first screw 21, providing insulation protection for the first screw 21 and preventing arcing discharge between the first screw 21 and the bottom metal part. A washer 41 is provided between the insulating cap 42 and the first screw 21.

[0041] Please see Figure 1 This application also provides a thin film deposition apparatus, including a main body, a carrier plate (not shown), and a gas distribution mechanism. The gas distribution mechanism can be any of the gas distribution mechanisms described in the above embodiments, and will not be repeated here.

[0042] The main body has a reaction chamber (not shown), and at least part of the gas distribution mechanism is located within the reaction chamber. The main body includes a chamber cover 1, which is fixedly connected to a spray back plate 33. A carrier plate is used to hold the product to be processed. The carrier plate is located within the reaction chamber and on the side of the spray plate 22 opposite to the spray back plate 33.

[0043] In this embodiment, the thin film deposition apparatus further includes a second connecting assembly for connecting the chamber cover 1 and the spray backplate 33. The second connecting assembly includes a second fastener 9, a first insulating ring 13, a first spacer, and a first cover plate. The second fastener 9 can be a screw or other fasteners with a fixing function.

[0044] The first insulating ring 13 is located between the cavity cover 1 and the spray back plate 33. The second fastener 9 passes through the cavity cover 1 and the first insulating ring 13 and is fixed to the spray back plate 33. The first isolation member is located between the second fastener 9 and the cavity cover 1. The first cover plate is located on the side of the cavity cover 1 away from the spray back plate 33 and is connected to the first isolation member.

[0045] A third insulating ring may be provided between the side of the second fastener 9 away from the spray back plate 33 and the first cover plate. The first isolator and the third insulating ring insulate the second fastener 9, which carries a high-frequency voltage, to prevent the high-frequency voltage from being conducted to the cavity cover 1. The first cover plate presses against the third insulating ring and also reinforces the slot at that location on the cavity cover 1.

[0046] In this embodiment, the thin film deposition apparatus further includes a third connecting assembly for connecting the chamber cover 1 and the spray backplate 33. Preferably, the second connecting assembly is located around the periphery of the first connecting assembly 27, and is approximately located in the middle portion of the spray backplate 33. The third connecting assembly is located at the end of the spray backplate 33, and the second connecting assembly is closer to the first connecting assembly 27 relative to the third connecting assembly.

[0047] like Figure 4 As shown, the third connecting assembly includes a third fastener 15, a second insulating ring 14, an insulating sleeve 16, and a second spacer 19. The third fastener 15 can be a screw or other fasteners with a fixing function. In this embodiment, the spray backplate 33 is mounted and fastened to the cavity cover 1 by the second fastener 9 and the third fastener 15. The second fastener 9 and the third fastener 15 are oriented in opposite directions, which makes the connection more secure and convenient.

[0048] The spray back plate 33 has a seventh through hole for the third fastener 15 to pass through. The second insulating ring 14 is located between the cavity cover 1 and the spray back plate 33. The third fastener 15 passes through the spray back plate 33 and the second insulating ring 14 is fixed to the cavity cover 1. An insulating sleeve 16 is disposed in the seventh through hole. The outer diameter of the insulating sleeve 16 facing the spray plate 22 is larger than the outer diameter of the side facing away from the spray plate 22, that is, the insulating sleeve 16 can be stepped. The inner wall of the insulating sleeve 16 and the third fastener 15 have a first gap 51 in the second direction Y. The second spacer 19 is disposed between the third fastener 15 and the spray plate 22. The second direction Y intersects the first direction X. Preferably, the second direction Y is perpendicular to the first direction X. In this embodiment, the first direction X is a vertical direction and the second direction Y is a horizontal direction.

[0049] Because the spray back plate 33 is large in size, there is a large temperature difference between the spray back plate 33 and the cavity cover 1, resulting in a relatively large thermal deformation displacement. The spray back plate 33 and the cavity cover 1 are fixedly connected by the second connecting assembly, which is approximately the middle position of the spray back plate 33. Therefore, the expansion of the spray back plate 33 is mainly manifested at the end / around, thus the third connecting assembly is provided with a first gap 51.

[0050] Preferably, a gasket 17 may be provided between the third fastener 15 and the insulating sleeve 16. A second gap 52 is provided between the inner wall of the insulating sleeve 16 and the gasket 17 in the second direction Y. When the spray back plate 33 expands to the left due to thermal expansion, the third fastener 15 and the gasket 17 remain relatively fixed. Due to the presence of the first gap 51 and the second gap 52, the insulating sleeve 16 will move to the left, releasing the thermal expansion displacement. This prevents the spray back plate 33 and the spray plate 22 from being restricted by thermal expansion deformation, thus avoiding damage to themselves or other parts caused by thermal deformation. It also ensures the flatness of the lower surface of the spray plate 22, improves the electric field uniformity, and enhances the uniformity of thin film deposition. The insulating sleeve 16 can be circular, thus providing good compensation for thermal expansion deformation over 360 degrees.

[0051] In this embodiment, the spray backplate 33 carries a high-frequency voltage, while the cavity cover 1 is grounded. The high-frequency voltage of the spray backplate 33 cannot be transmitted to the cavity cover 1; therefore, insulation is required between the spray backplate 33 and the cavity cover 1. The first insulating ring 13 and the second insulating ring 14 are made of high-temperature resistant non-metallic material to prevent electrical conduction between the spray backplate 33 and the cavity cover 1. Simultaneously, the first insulating ring 13 has a sealing structure, sealing the area between the spray backplate 33 and the cavity cover 1 to form a vacuum-sealed region.

[0052] Although the second insulating ring 14 is made of insulating material, over time a thin film can be deposited on its outer surface. Since this film is conductive, the second insulating ring 14 requires a special design. The second insulating ring 14 includes a first ring portion 48 and a second ring portion 49. The second ring portion 49 is located around the first ring portion 48, and a first cavity 50 is formed between the first ring portion 48 and the second ring portion 49. The first cavity 50 communicates with the outside of the second insulating ring 14. This significantly reduces the risk of thin film deposition inside the first cavity 50, preventing the outer surface of the second insulating ring 14 from becoming conductive between the spray backplate 33 and the cavity cover 1, thus ensuring electric field stability.

[0053] Because the spray backplate 33 carries a high-frequency voltage and the cavity cover 1 is grounded, the two cannot conduct electricity. However, the third fastener 15 is made of metal and acts as a conductor. Therefore, the insulating sleeve 16 is made of high-temperature resistant insulating material to prevent the third fastener 15 from conducting electricity between the spray backplate 33 and the cavity cover 1. The second isolator 19 is installed between the head of the third fastener 15 and the energized spray plate 22, insulating the third fastener 15 from the spray plate 22. This prevents the high-frequency voltage carried by the spray backplate 33 and the spray plate 22 from being transmitted to the cavity cover 1.

[0054] In this embodiment, components such as the spray backplate 33, spray plate 22, and flow equalization plate 23 are easily contaminated by thin film deposition and dust particles during the process. Therefore, a heating element can be provided inside the spray backplate 33 to heat the components and their internal gas. This can increase the temperature of the gas distribution mechanism, reducing surface thin film deposition and dust adhesion. Furthermore, it can heat the process gas before the process to reach or approach the process temperature, improving thin film deposition uniformity and efficiency while reducing costs. This heating element can be a heater nested on the upper surface of the spray backplate 33.

[0055] Meanwhile, since the spray backplate 33 carries a high-frequency voltage, the lead wires of the heating section of the spray backplate 33 are connected to a filter, which can eliminate the mutual influence between the high-frequency voltage of the spray backplate 33 and the heating section and the temperature sensor of the heating section. The cavity cover 1 may be provided with an insulating sleeve, through which the lead wires pass. The insulating sleeve is made of high-temperature resistant insulating material to prevent the high-frequency voltage of the heating section lead wires from being transmitted to the cavity cover 1.

[0056] In this embodiment, a third gap 57 is provided between the chamber cover 1 and the spray back plate 33. The thin film deposition apparatus may further include a second air inlet pipe and a second cover plate. The second air inlet pipe is used to deliver inert gas. The second cover plate is disposed on the side of the chamber cover 1 facing the spray back plate 33, and the second cover plate and the chamber cover 1 form a purge chamber. The outlet of the second air inlet pipe is connected to the purge chamber. The second cover plate is provided with a plurality of purge holes for connecting the purge chamber and the third gap 57.

[0057] Inert gas enters the purging chamber from the second inlet pipe and then flows into the third gap 57 formed between the chamber cover 1, the spray back plate 33 and the first insulating ring 13, blowing the process gas away from the third gap 57, preventing the process gas from depositing a thin film on the surface of the component in the third gap 57 to form dust particles and prevent arcing between the lower surface of the chamber cover 1 and the upper surface of the spray back plate 33.

[0058] The shape of the main body is not uniquely limited in this embodiment; it can be a cuboid, cylinder, or other three-dimensional shape. Correspondingly, in the direction perpendicular to the first direction X, the cross-section of the main body can be rectangular, circular, or other shapes. In this embodiment, the cross-section can be square, with a side length of at least 2 meters. That is, the side length of the reaction chamber is at least 2 meters. This embodiment has a large-area cavity, allowing for the installation of a large-area carrier plate and spray plate 22. The large-area carrier plate can hold more materials to be processed, thereby increasing production capacity and reducing costs.

[0059] The thin-film deposition apparatus provided in this application is used for thin-film deposition in heterojunction photovoltaic cells. This process achieves an efficiency of over 25%, which is higher than existing mainstream processes and equipment, significantly improving cell efficiency. Therefore, this thin-film deposition apparatus improves cell efficiency, reduces processing steps, and lowers equipment costs.

[0060] It should be noted that in the description of this specification, the terms "first," "second," etc., are used only for descriptive purposes and to distinguish similar objects; there is no order between them, nor should they be construed as indicating or implying relative importance. Furthermore, in the description of this specification, unless otherwise stated, "a plurality of" means two or more.

[0061] Any numerical values ​​cited herein include all values ​​ranging from a lower limit to an upper limit, increasing by one unit, with at least two units between any lower and any higher value. For example, if the quantity of a component or the value of a process variable (e.g., temperature, pressure, time, etc.) is described as being from 1 to 90, preferably from 20 to 80, more preferably from 30 to 70, the purpose is to illustrate that values ​​such as 15 to 85, 22 to 68, 43 to 51, 30 to 32 are also explicitly listed in this specification. For values ​​less than 1, a unit is appropriately considered to be 0.0001, 0.001, 0.01, 0.1, etc. These are merely examples intended for explicit expression, and it can be assumed that all possible combinations of values ​​listed between the minimum and maximum values ​​are explicitly described in this specification in a similar manner.

[0062] Unless otherwise stated, all ranges include the endpoints and all numbers between them. The terms "approximately" or "about" used with ranges apply to both endpoints of the range. Thus, "approximately 20 to 30" is intended to cover "approximately 20 to approximately 30," including at least the specified endpoints.

[0063] The term "consistent essentially of" used to describe a combination should include the identified elements, components, parts, or steps, as well as other elements, components, parts, or steps that do not substantially affect the essential novel features of the combination. The use of the terms "comprising" or "including" to describe combinations of elements, components, parts, or steps herein also contemplates embodiments that are substantially composed of such elements, components, parts, or steps. The use of the term "may" herein is intended to indicate that any described attribute included by "may" is optional.

[0064] Multiple elements, components, parts, or steps can be provided by a single integrated element, component, part, or step. Alternatively, a single integrated element, component, part, or step can be divided into multiple separate elements, components, parts, or steps. The use of "a" or "an" to describe an element, component, part, or step does not imply the exclusion of other elements, components, parts, or steps.

[0065] The above description is merely an embodiment of this application and does not limit the patent scope of this application. Any equivalent structural or procedural transformations made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this application.

Claims

1. A thin film deposition apparatus, characterized by, include: An air distribution mechanism, comprising a spray back plate, an air equalization plate, a flow equalization plate, and a spray plate arranged sequentially along a first direction; The spray back plate and the spray plate together form a spray head. The gas equalization plate and the flow equalization plate are located inside the spray head. A first gas equalization chamber is formed between the flow equalization plate and the spray back plate, and a second gas equalization chamber is formed between the flow equalization plate and the spray plate. The gas equalization plate is disposed within the first gas equalization chamber. The spray back plate has a first through hole facing the gas equalization plate. The gas equalization plate has a through gas equalization hole. The flow equalization plate has a through flow equalization hole, which allows process gas to enter the second gas equalization chamber from the first gas equalization chamber. The spray plate has a through spray hole. The main body has a reaction chamber inside, and at least a portion of the gas distribution mechanism is located inside the reaction chamber; the main body includes a chamber cover, and the chamber cover is fixedly connected to the spray back plate; A carrier plate is used to hold the products to be processed; the carrier plate is located inside the reaction chamber and on the side of the spray plate opposite to the spray back plate; The second air intake pipe is used to deliver inert gas; A second cover plate is provided on the side of the cavity cover facing the spray back plate. The second cover plate and the cavity cover form a purge cavity. The outlet of the second air inlet pipe is connected to the purge cavity. There is a third gap between the cavity cover and the spray back plate. The second cover plate is provided with a plurality of purge holes, which are used to connect the purge cavity and the third gap.

2. The thin film deposition apparatus of claim 1, wherein The spray back plate is provided with a heating element, which is used to heat the spray back plate, the spray plate and the flow equalization plate and the gas inside them.

3. The thin film deposition apparatus of claim 2, wherein The lead wire of the spray backplate heating section is connected to a filter to eliminate the mutual influence between the high-frequency voltage of the spray backplate and the heating section and the temperature sensor of the heating section.

4. The thin film deposition apparatus according to claim 3, characterized in that, The cavity cover is provided with an insulating sleeve, and the lead wire passes through the insulating sleeve. The insulating sleeve is made of high-temperature resistant insulating material and is used to prevent the high-frequency voltage of the lead wire from being transmitted to the cavity cover.

5. The thin film deposition apparatus according to any one of claims 1-4, characterized in that, It also includes a second connecting assembly for connecting the cavity cover and the spray backplate, the second connecting assembly comprising: Second fastener; A first insulating ring is located between the cavity cover and the spray back plate, and a second fastener passes through the cavity cover and the first insulating ring and is fixed to the spray back plate; The first isolation element is disposed between the second fastener and the cavity cover; A first cover plate is disposed on the side of the cavity cover opposite to the spray back plate and is connected to the first isolation member.

6. The thin film deposition apparatus according to claim 5, characterized in that, A third insulating ring is provided between the side of the second fastener away from the spray back plate and the first cover plate.

7. The thin film deposition apparatus according to claim 6, characterized in that, The first cover plate presses against the third insulating ring.

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