Wafer polishing device, wafer polishing method, and electroless plating apparatus

Abstract

The application relates to a wafer polishing method, a wafer polishing device and a chemical plating equipment. The method comprises the following steps: controlling a polishing frame to move from a first position on the upper side to a second position on the lower side; the first position and the second position are both lower than the liquid surface of a process tank of the chemical plating equipment; controlling the first speed of the polishing frame before the polishing frame reaches the second position and stops moving to be located in a first preset speed range, so that the polishing frame can generate vibration with a first preset amplitude in the case of stopping moving. The wafer polishing method, the wafer polishing device and the chemical plating equipment can improve the uniformity of a plating layer of plating.

Description

Technical Field

[0001] This application relates to the field of surface treatment technology, and in particular to a method for polishing a wafer polishing device, a wafer polishing device, and a chemical plating equipment. Background Technology

[0002] In the semiconductor chip manufacturing process, to improve the solderability of semiconductor chips, a layer of nickel is usually plated on the surface of the semiconductor chip. During the soldering process, to prevent nickel oxidation, a layer of gold is then plated on top of the nickel layer. Common methods for nickel-gold plating include electroless nickel-gold plating and electroplating. Electroless nickel-gold plating is widely used due to its simplicity and low cost.

[0003] However, with the development of semiconductor technology, the requirements for the uniformity of the coating are becoming increasingly stringent, and existing chemical plating equipment is gradually failing to meet these requirements. Summary of the Invention

[0004] In view of the above, this application provides a method for polishing a wafer polishing device, a wafer polishing device, and a chemical plating equipment to solve the technical problems existing in the background art.

[0005] To achieve the above objectives, the technical solution of this application is implemented as follows:

[0006] In a first aspect, embodiments of this application provide a polishing method for a wafer polishing device, applied to a coating equipment, comprising:

[0007] The throwing frame is controlled to move from a first position above to a second position below; both the first and second positions are below the liquid level in the process tank of the coating equipment.

[0008] The first speed of the throwing frame before it reaches the second position and stops moving is within a first preset speed range, so that the throwing frame can generate a vibration of a first preset amplitude when it stops moving.

[0009] Optionally, the first velocity of the controlled throwing frame before it reaches the second position and stops moving is within a first preset speed range, including:

[0010] The stroke controlling the movement of the throwing frame includes at least an acceleration phase and a deceleration phase, so that the first speed of the throwing frame before it reaches the second position and stops moving is within a first preset speed range, and the time required for the throwing frame to reach the second position is less than a first preset time; the first preset time is a preset process time for the throwing frame to descend.

[0011] Optionally, the stroke for controlling the movement of the throwing frame includes at least an acceleration phase and a deceleration phase, including:

[0012] The acceleration during both the acceleration and deceleration phases of the movement of the throwing frame is a constant value.

[0013] Optionally, the deceleration section includes:

[0014] The throwing frame is controlled to decelerate at a preset first acceleration and continue for a second preset time; the second preset time is less than the time taken for the deceleration phase.

[0015] The throwing frame is controlled to decelerate at a preset second acceleration until it reaches the second position; the absolute value of the second acceleration is less than the absolute value of the first acceleration.

[0016] Optionally, the method further includes:

[0017] Control the throwing frame to move from the second position to the first position;

[0018] The second speed of the throwing frame before it reaches the first position and stops moving is within a second preset speed range, so that the throwing frame can generate a second preset amplitude vibration when it stops moving.

[0019] Optionally, the second speed of the controlled throwing frame before it reaches the first position and stops moving is within a second preset speed range, including:

[0020] The stroke controlling the movement of the throwing frame includes at least an acceleration phase and a deceleration phase, so that the second speed of the throwing frame before it reaches the first position and stops moving is within a second preset speed range, and the time required for the throwing frame to reach the first position is less than a third preset time; the third preset time is a preset process time for the throwing frame to rise.

[0021] Secondly, embodiments of this application provide a wafer polishing apparatus applicable to any of the wafer polishing methods described above, the polishing apparatus comprising:

[0022] A driving component, having a driving output shaft and a supporting component connected to the output shaft;

[0023] The throwing arm is connected to the driving component and moves up and down under the action of the driving component.

[0024] The throwing frame, connected to the throwing arm, can move with the throwing arm and has a hollowed-out receiving cavity for placing a basket containing wafers.

[0025] The limiting assembly includes a first limiting member and a second limiting member, and the abutment member moves between the first limiting member and the second limiting member following the output shaft.

[0026] Optionally, the first limiting member has a bottom surface, and when the supporting member abuts against the bottom surface of the first limiting member, the throwing frame is located in the first position;

[0027] The second limiting member has a top surface, and when the supporting member abuts against the top surface of the second limiting member, the throwing frame is located in the second position.

[0028] Optionally, the throwing arm includes a positioning groove;

[0029] The projectile frame has a positioning block adapted to the positioning slot, and the projectile frame is connected to the projectile arm through the positioning slot and the positioning block.

[0030] Thirdly, embodiments of this application provide a chemical plating apparatus, including: a feeding device, a wafer polishing device, a plurality of process tanks, and a plurality of unloading devices;

[0031] The wafer polishing device can be any of the wafer polishing devices described above.

[0032] The wafer polishing method, wafer polishing device, and electroless plating equipment provided in this application include: controlling a polishing frame to move from a first position above to a second position below; both the first and second positions are below the liquid level of the process tank of the plating equipment; controlling the first speed of the polishing frame before it reaches the second position and stops moving to be within a first preset speed range, so that the polishing frame can generate vibration of a first preset amplitude when it stops moving. It can be seen that the wafer polishing method, wafer polishing device, and electroless plating equipment in this application control the first speed of the polishing frame before it stops moving to be within a first preset speed range, so that the polishing frame can generate vibration of a first preset amplitude when it stops moving. The wafer self-catalyzes the generation of hydrogen bubbles of different sizes in the plating solution, and these bubbles adhere to the wafer surface. With this configuration, during the wafer's descent, the friction between the wafer and the plating solution can remove large-diameter bubbles from the wafer surface. Based on this, the vibration with the first preset amplitude in this application can more effectively remove small-diameter hydrogen bubbles adhering to the wafer surface, thereby achieving a bubble-free wafer surface. This allows the plating solution to fully contact the product to be plated, improving the uniformity of the plated layer and preventing damage to the product from excessive vibration. Therefore, the wafer polishing device method, wafer polishing device, and electroless plating equipment of this application embodiment can improve the uniformity of the plated layer.

[0033] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0034] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:

[0035] Figure 1 Schematic diagram of the chemical plating equipment provided in the embodiments of this application Figure 1 ;

[0036] Figure 2 Schematic diagram of the chemical plating equipment provided in the embodiments of this application Figure 2 ;

[0037] Figure 3 A schematic flowchart illustrating the polishing method of the wafer polishing apparatus provided in this application embodiment;

[0038] Figure 4 A schematic diagram illustrating the change in the speed of the moving propagation frame in the propagation method of the wafer propagation apparatus provided in this application embodiment. Figure 1 ;

[0039] Figure 5 A schematic diagram illustrating the change in the speed of the moving propagation frame in the propagation method of the wafer propagation apparatus provided in this application embodiment. Figure 2 .

[0040] Explanation of reference numerals in the attached figures:

[0041] 20. Wafer polishing device; 21. Drive component; 211. Support component; 22. Polishing arm; 221. Clamping frame; 222. Positioning groove; 23. Polishing frame; 231. Positioning block; 241. First limiting component; 242. Second limiting component; 30. Process groove; 40. Flower basket. Detailed Implementation

[0042] To make the technical solution and beneficial effects of this application more apparent and understandable, a detailed description is provided below by listing specific embodiments. The accompanying drawings are not necessarily drawn to scale, and local features may be enlarged or reduced to more clearly show the details of the local features; unless otherwise defined, the technical and scientific terms used herein have the same meanings as those in the technical field to which this application pertains.

[0043] In the description of this application, the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "height", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only used for the purpose of simplifying the description of this application and do not indicate that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. In other words, they should not be construed as limitations on this application.

[0044] In this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating the relative importance of the indicated features or the number of indicated technical features. Therefore, a feature specified as "first" or "second" may explicitly include at least one of those features. In the description of this application, "multiple" means at least two, such as two, three, etc.; "several" means at least one, such as one, two, three, etc., unless otherwise explicitly specified.

[0045] In this application, unless otherwise expressly defined, the terms "installation," "connection," "linking," "fixing," "setting," etc., should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, or an integral part; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can also refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0046] In this application, unless otherwise expressly defined, the terms "above," "on top of," "over," "above," "below," "below," "below," or "below" for "first feature over second feature" can refer to the first and second features being in direct contact, or to the first and second features being in indirect contact through an intermediate medium. Furthermore, "above," "over," and "below" for "first feature over second feature" can mean the first feature is directly above or diagonally above the second feature, or simply indicates that the horizontal height of the first feature is higher than the horizontal height of the second feature. Similarly, "below," "below," and "below" for "first feature over second feature" can mean the first feature is directly below or diagonally below the second feature, or simply indicates that the horizontal height of the first feature is lower than the horizontal height of the second feature.

[0047] To fully understand this application, detailed steps and structures will be presented in the following description to illustrate the technical solution of this application. Preferred embodiments of this application are described in detail below; however, in addition to these detailed descriptions, this application may have other implementation methods.

[0048] Among related technologies, plating technology is widely used in semiconductor manufacturing fields such as wire bonding and flip chip packaging, 3D integration, and micro-electro-mechanical systems (MEMS).

[0049] However, after extensive research, the inventors of this application discovered that during the deposition of semiconductor wafers, the plating solution generates a large number of bubbles during the autocatalytic reaction. These bubbles include both relatively large-diameter and relatively small-diameter bubbles. These bubbles adhere to the wafer surface as they are deposited, preventing the plating solution from making good contact with the wafer surface. This affects the deposition of the coating and may even cause bubbles to enter the deposited layer of the coating and generate stress, thus reducing the quality of the coating.

[0050] Therefore, after further extensive research, the inventors of this application have proposed the following technical solution.

[0051] This application provides a wafer polishing device and a polishing method for a coating equipment. In this embodiment, the coating equipment is a chemical plating equipment, where the plating solution generates a large number of hydrogen bubbles (hereinafter referred to as bubbles) during the autocatalytic reaction. Therefore, this application provides a chemical plating equipment, a wafer polishing device 20 within the chemical plating equipment, and a polishing method for the wafer polishing device 20. (Refer to...) Figure 1 and Figure 2 The electroless plating equipment includes: a loading device, a wafer polishing device 20, several process tanks 30, and several unloading devices. The wafer polishing device 20 includes: a drive member 21 with a drivable output shaft and a support member 211 connected to the output shaft; a polishing arm 22 connected to the drive member 21; and a polishing frame 23 connected to the polishing arm 22. The polishing frame 23 has a hollowed-out receiving cavity. A basket 40 containing a wafer is fixed within this cavity by a fixing member, which restricts relative movement between the basket and the polishing frame. When the wafer polishing device is operating, the drive member can drive the polishing arm 22 to move the polishing frame 23 up and down, thereby moving the basket 40 and the wafer within the polishing frame 23 within the plating solution of the process tank.

[0052] In other embodiments, the coating equipment may also include other coating equipment such as electroplating equipment, and the wafer polishing device and the polishing method of the wafer polishing device are also applicable to other coating equipment, which will not be described in detail here.

[0053] It should be noted that, in this embodiment, the agitation frame 23 has a hollowed-out receiving cavity for placing the flower basket 40, and the flower basket 40 has an open hollowed-out structure. When the agitation frame 23 and the flower basket 40 are in the plating solution, the plating solution can contact the wafer through the hollowed-out receiving cavity and the hollowed-out flower basket, achieving the plating effect on the wafer. In this embodiment, the agitation frame with the hollowed-out receiving cavity has a rectangular structure, and each hollowed-out receiving cavity can accommodate two flower baskets. In other embodiments, the structure, shape, and specifications of the agitation frame are not specifically limited, as long as the above-mentioned effect can be achieved.

[0054] Specifically, in this embodiment, the driving component is a cylinder. The cylinder may include a cylinder barrel and a piston rod. The output shaft of the driving component may be the piston rod of the cylinder.

[0055] In other embodiments, the drive element 21 may be a motor. Furthermore, since the throwing motion is linear movement, the power output end of the motor may also be equipped with a conversion mechanism that converts rotation into motion. Examples include a lead screw, worm gear, rack and pinion, etc. The output shaft may be the converted motion output component.

[0056] In this embodiment, the wafer polishing device further includes a limiting component for restricting the movement stroke of the abutment 211, which follows a linear trajectory. Specifically, the limiting component includes a first limiting component 241 and a second limiting component 242, with the abutment 211 moving between the first limiting component 241 and the second limiting component 242 following the output shaft. More specifically, the first limiting component 241 restricts the extreme position of the abutment 211 in one direction, and the second limiting component 242 restricts the extreme position of the abutment 211 in another direction. Since the abutment 211 and the output shaft are connected, i.e., they are linked, the limiting component also restricts the movement stroke of the output shaft, thereby restricting the movement stroke of the polishing arm 22 and the polishing frame 23, causing the polishing frame 23 to move linearly between two preset positions.

[0057] Specifically, in this embodiment, the motion of the throwing frame 23 is a linear motion that moves up and down.

[0058] In some embodiments, the first limiting member 241 has a bottom surface, and when the supporting member 211 abuts against the bottom surface of the first limiting member 241, the throwing frame 23 is located in the first position;

[0059] The second limiting member 242 has a top surface, and when the supporting member 211 abuts against the top surface of the second limiting member 242, the throwing frame 23 is located in the second position.

[0060] The bottom surface and the top surface make the limiting of the supporting member 211 more stable, which in turn makes the throwing frame 23 stably located in the first position or the second position.

[0061] Furthermore, due to the setting of the first limiting member 241, the throwing frame 23 with a certain moving speed can be limited by contacting the first limiting member during the upward movement, thereby reducing the speed of the throwing frame to 0. Since the flower basket and the throwing frame are fixed by the fixing member, the speed of the flower basket also decreases to 0.

[0062] Due to the setting of the second limiting member 242, the throwing frame 23 with a certain moving speed can be limited by contacting the second limiting member 242 during its downward movement, thereby reducing the speed of the throwing frame to 0. Since the basket and the throwing frame are fixed by the fixing member, the speed of the basket also decreases to 0. At this time, the wafer in the basket still has a certain moving speed, thereby contacting the basket and generating vibration. This causes the large-diameter bubbles and small-diameter bubbles attached to the wafer to be affected by the vibration, allowing them to detach from the wafer and rise, so that the wafer surface can fully contact the plating solution and produce a more uniform plating layer.

[0063] In some embodiments, the wafer polishing device further includes a damper that can adjust the movement speed of the polishing frame 23.

[0064] Furthermore, two dampers are provided. These two dampers can be positioned near the first limiting member 241 and the second limiting member 242, or integrated into the cylinder, as long as they can adjust the speed of the throwing frame 23. For example, in this embodiment, the dampers can switch between the acceleration and deceleration phases. On the other hand, by providing dampers, the vibration generated by the throwing frame 23 when it moves to the first limiting member 241 or the second limiting member 242 can be reduced, decreasing the relative collision force between the wafer and the throwing frame 23 and preventing wafer breakage. In other embodiments, other buffer deceleration structures can also be provided; their structure and position are not specifically limited here, as long as the above effects are achieved.

[0065] In some embodiments, the throwing arm 22 includes a positioning groove 222;

[0066] The projectile frame 23 has a positioning block 231 that is adapted to the positioning groove 222, and the projectile frame 23 is connected to the projectile arm 22 through the positioning groove 222 and the positioning block 231.

[0067] The positioning slot 222 and positioning block 231 enable a more flexible and detachable connection between the throwing frame 23 and the throwing arm 22, and the positioning of the connection is also more convenient and accurate.

[0068] Specifically, the agitator arm 22 includes a clamping frame 221 surrounding the agitator frame 23, and the positioning groove 222 is formed in the clamping frame 221. The positioning block 231 is disposed on the top of the agitator frame 23 and is a certain distance away from the top of the basket 40 in the agitator frame 23, so that during plating, the clamping frame 221 is above the liquid surface of the plating solution.

[0069] The principle of the wafer polishing device for removing bubbles from the wafer surface is as follows: the driving component 21 drives the polishing frame 23 to move between the first limiting component 241 and the second limiting component 242, thereby causing the basket 40 to move up and down in the plating solution. In this embodiment, during the descent of the basket 40 and the wafer, the wafer inside the basket 40 will not detach from the basket 40, but will move downward with the basket 40 until it reaches the second position. The polishing frame 23 and the basket 40 then move to the second position at the first speed and suddenly stop. At this time, the wafer inside the basket 40 still has a downward tendency and, after contacting the bottom of the basket 40 and receiving its reaction force, generates a vibration with a first preset amplitude. This allows the friction between the wafer and the plating solution during the wafer's descent to remove large-diameter bubbles from the wafer surface, while the vibration of the first preset amplitude removes small-diameter bubbles. During the upward movement of the throwing frame 23, when it reaches the first position, both the throwing frame 23 and the basket 40 stop moving. The wafer inside the basket 40, due to inertia, tends to continue moving upwards. Because the basket 40 has an open structure, the wafer will not contact any structure above it. At this time, the wafer sways relatively relative to the basket 40, but this sway is small and negligible. In the next process, the throwing frame 23 stays at the first position for a short time. Conversely, as the basket 40 continues to descend following the throwing frame 23, the wafer inside the basket 40 will fall into the basket 40 under gravity and descend with it again, preventing the wafer from detaching from the basket 40 during descent. Therefore, during the upward movement of the wafer, the friction between the wafer and the plating solution also removes large-diameter bubbles from the wafer surface, achieving a certain de-bubbling effect.

[0070] Specifically, in this embodiment, the acceleration of the throwing frame 23 is 0.4g-0.6g.

[0071] refer to Figure 3 The wafer polishing method provided in this application embodiment includes:

[0072] Step 601: Control the throwing frame 23 to move from the upper first position to the lower second position; both the first position and the second position are lower than the liquid level of the process tank 30 of the coating equipment;

[0073] Step 602: Control the first speed of the throwing frame 23 before it reaches the second position and stops moving to be within the first preset speed range, so that when the throwing frame 23 stops moving, the wafer can generate a vibration of the first preset amplitude.

[0074] The method can be implemented by a computer, which can be a computing device configured with a processor. The processor can be a general-purpose processor, a digital signal processor (DSP), a field-programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc.

[0075] In step 601, the purpose of controlling the throwing frame 23 can be achieved by controlling the driving component 21, which drives the throwing frame 23 to move. The throwing frame 23 moves from the first position above to the second position below, that is, the holding component 211 makes a downward movement, thereby driving the basket 40 and the wafer in the throwing frame 23 to move from the opening of the process tank 30 to the bottom of the process tank 30.

[0076] In this embodiment, since the wafer polishing device is used in the electroless plating equipment, the process tank 30 is also called the plating tank, which contains the plating solution, also known as the chemical solution. The wafer is immersed in it for a certain period of time to complete the plating process. Of course, it is also necessary to control the composition, temperature, immersion time, etc. of the plating solution, which will not be described in detail here.

[0077] In other embodiments, the wafer polishing device can also be applied to other equipment, where the process tank is another corresponding functional tank, and the liquid in the process tank is also a liquid that can perform its function corresponding to the functional tank. Here, the application of the wafer polishing device, the type of liquid, and the function of the process tank are not specifically limited, but can be determined according to the actual situation.

[0078] In step 602, the vibration with a first preset amplitude is generated to remove hydrogen bubbles adhering to the surface of the wafer, thereby further improving the coating quality. The first preset amplitude must be neither too large nor too small. Too large an amplitude can damage the wafer, while too small an amplitude will not achieve the purpose of removing bubbles.

[0079] In some embodiments, the amplitude of the vibration is controlled by controlling the initial velocity of the throwing frame 23 before it stops moving.

[0080] Specifically, the throwing frame 23 and the flower basket 40 stop suddenly at the second position at the first speed. At this time, the wafer inside the flower basket 40 comes into contact with the bottom of the flower basket 40 at the first speed, thereby generating vibration and achieving the effect of removing bubbles from the surface of the wafer.

[0081] In other embodiments, while ensuring that the wafer is not damaged, the vibration frequency and waveform can be adjusted to better remove bubbles adhering to the wafer surface. The specific vibration mode of the wafer is not limited here, as long as it effectively removes bubbles adhering to the wafer surface.

[0082] In some embodiments, the first velocity of the controlled throwing frame 23 before it reaches the second position and stops moving is within a first preset velocity range, including:

[0083] The stroke controlling the movement of the throwing frame 23 includes at least an acceleration phase and a deceleration phase, so that the first speed of the throwing frame 23 before it reaches the second position and stops moving is within a first preset speed range, and the time required for the throwing frame 23 to reach the second position is less than a first preset time; the first preset time is a preset process time for the throwing frame 23 to descend.

[0084] Understandably, to reduce the descent time of the propulsion frame 23 and improve production efficiency, the propulsion frame 23 needs to move rapidly. However, to minimize wafer damage, the initial speed before stopping cannot be too high. Therefore, the propulsion frame 23 needs both acceleration and deceleration phases during its movement. (Refer to...) Figure 4 and Figure 5 .

[0085] In some embodiments, the stroke for controlling the movement of the throwing frame 23 includes at least an acceleration phase and a deceleration phase, including:

[0086] The acceleration during the acceleration and deceleration phases of the movement of the throwing frame 23 is a constant value.

[0087] That is, the acceleration phase is uniform acceleration, and the deceleration phase is uniform deceleration. (Refer to...) Figure 4 In this way, the wafer is less damaged during the movement of the throwing frame 23.

[0088] It is understood that in other embodiments, please refer to Figure 5 The projectile frame 23 can undergo variable acceleration motion, whether accelerating or decelerating, as long as the first speed is within a first preset speed range, thus ensuring that it generates a first preset amplitude from the first speed to a stop. The speed range can be controlled within a certain range.

[0089] In some embodiments, the deceleration section may include at least two deceleration segments. As described above, as long as the first speed is within a first preset speed range, so that it can generate a first preset amplitude from the first speed to the stop, and the speed range is controlled within a certain range.

[0090] The deceleration section includes:

[0091] The projectile frame 23 is controlled to decelerate at a preset first acceleration and continue for a second preset time; the second preset time is less than the time taken for the deceleration phase.

[0092] The throwing frame 23 is controlled to decelerate and move at a preset second acceleration until it reaches the second position; the absolute value of the second acceleration is less than the absolute value of the first acceleration.

[0093] That is, the deceleration stage can be a two-stage deceleration, which can reduce the time of the deceleration stage, improve processing efficiency, and make the process of the throwing frame 23 entering the first preset speed range before stopping more smoothly.

[0094] Specifically, the second preset time can be half the time used for the deceleration phase. This makes control more convenient and operation smoother. It is understood that the deceleration phase can be a multi-stage deceleration with more than two deceleration segments. This can further reduce the time of the deceleration phase and improve processing efficiency.

[0095] In some embodiments, the method further includes:

[0096] Control the throwing frame 23 to move from the second position to the first position;

[0097] The second speed of the control frame 23 before it reaches the first position and stops moving is within the second preset speed range, so that when the control frame 23 stops moving, the wafer shakes in the basket 40, and the shaking does not cause the bubbles on the wafer surface to detach from the wafer.

[0098] Specifically, during the upward movement of the throwing frame 23, when it comes into contact with the first limiting member 241, both the throwing frame 23 and the basket 40 stop moving. At this time, the wafer inside the basket 40 still tends to move upward, thus generating inertia that causes the wafer to sway slightly up and down (since the basket 40 has an open structure, no structure touches the slightly swaying wafer, so the rising wafer does not receive any other force, such as the upward reaction force from the basket 40 when the wafer touches it during descent, and therefore cannot achieve the effect of removing bubbles). However, as the wafer inside the basket 40 moves from the bottom of the process tank to near the top with the throwing frame 23, the bubbles on the wafer surface also tend to move upward. During this movement, the friction between the wafer and the plating solution intensifies, causing the hydrogen bubbles to be removed more quickly under the action of friction.

[0099] In some embodiments, the second speed of the controlled throwing frame 23 before it reaches the first position and stops moving is within a second preset speed range, including:

[0100] The stroke controlling the movement of the throwing frame 23 includes at least an acceleration phase and a deceleration phase, so that the second speed of the throwing frame 23 before it reaches the first position and stops moving is within a second preset speed range, and the time required for the throwing frame 23 to reach the first position is less than a third preset time; the third preset time is a preset process time for the throwing frame 23 to rise.

[0101] Understandably, to reduce the descent time of the propulsion frame 23 and improve production efficiency, the propulsion frame 23 needs to move rapidly. However, to minimize wafer damage, the second speed before stopping cannot be too high. Therefore, the propulsion frame 23 needs both acceleration and deceleration phases during its movement. It is understandable that there can be multiple acceleration and deceleration phases.

[0102] It should be noted that the movement of the throwing frame 23 includes both downward and upward strokes, and there is no necessary requirement for their execution order; that is, the downward stroke can be executed first, or the upward stroke can be executed first. However, the downward stroke is more effective in removing hydrogen bubbles, so it will be introduced first. The execution of the upward stroke is the same as the downward stroke, except that the direction of movement is different and the resulting effect is slightly different. For details not covered in the upward stroke section, please refer to the section on the downward stroke section.

[0103] It should be understood that the above embodiments are exemplary and are not intended to encompass all possible implementations included in the claims. Various modifications and changes can be made to the above embodiments without departing from the scope of this disclosure. Similarly, the various technical features of the above embodiments can be arbitrarily combined to form other embodiments of this application that may not be explicitly described. Therefore, the above embodiments merely illustrate several implementations of this application and do not limit the scope of protection of this patent application.

Claims

1. A method for polishing a wafer polishing device, applied to a coating equipment, characterized in that, The wafer polishing device includes a polishing frame and a basket located within the polishing frame, and the method includes: The throwing frame is controlled to move from a first position above to a second position below; both the first and second positions are below the liquid level in the process tank of the coating equipment. The first speed of the control frame before it reaches the second position and stops moving is within a first preset speed range, so that when the wafer is plated using the plating equipment, if the control frame suddenly stops moving, the wafer in the basket continues to move downward due to inertia and collides with the bottom of the basket, generating a vibration of the first preset amplitude. The first velocity of the controlled throwing frame before it reaches the second position and stops moving is within a first preset velocity range, including: The stroke controlling the movement of the throwing frame includes at least an acceleration phase and a deceleration phase, such that the first speed of the throwing frame before it reaches the second position and stops moving is within a first preset speed range, and such that the time required for the throwing frame to reach the second position is less than a first preset time; the first preset time is a preset process time for the throwing frame to descend. The throwing frame is controlled to move from the second position to the first position. When it moves to the first position, the throwing frame and the basket stop moving. The basket has an open structure so that when the wafer is plated using the plating equipment, the wafer inside the basket continues to move upward due to inertia and the top of the wafer does not come into contact with any structure of the basket.

2. The polishing method of the wafer polishing apparatus according to claim 1, characterized in that, The stroke controlling the movement of the throwing frame includes at least an acceleration phase and a deceleration phase, including: The acceleration during both the acceleration and deceleration phases of the movement of the throwing frame is a constant value.

3. The polishing method of the wafer polishing apparatus according to claim 2, characterized in that, The deceleration section includes: The throwing frame is controlled to decelerate at a preset first acceleration and continue for a second preset time; the second preset time is less than the time taken for the deceleration phase. The throwing frame is controlled to decelerate at a preset second acceleration until it reaches the second position; the absolute value of the second acceleration is less than the absolute value of the first acceleration.

4. The polishing method of the wafer polishing apparatus according to claim 1, characterized in that, The control of the throwing frame moving from the second position to the first position includes: The stroke controlling the movement of the throwing frame includes at least an acceleration phase and a deceleration phase, so that the second speed of the throwing frame before it reaches the first position and stops moving is within a second preset speed range, and the time required for the throwing frame to reach the first position is less than a third preset time; the third preset time is a preset process time for the throwing frame to rise.

5. A wafer polishing device, characterized in that, A polishing method using a wafer polishing apparatus as described in any one of claims 1-4, wherein the wafer polishing apparatus comprises: A driving component having a driving output shaft and a supporting component connected to the output shaft; The throwing arm is connected to the driving component and moves up and down under the action of the driving component. The throwing frame, connected to the throwing arm, can move with the throwing arm and has a hollowed-out receiving cavity for placing a basket containing wafers. The limiting assembly includes a first limiting member and a second limiting member, and the abutment member moves between the first limiting member and the second limiting member following the output shaft.

6. The wafer polishing apparatus according to claim 5, characterized in that, The first limiting member has a bottom surface, and when the supporting member abuts against the bottom surface of the first limiting member, the throwing frame is located at the first position; The second limiting member has a top surface, and when the supporting member abuts against the top surface of the second limiting member, the throwing frame is located in the second position.

7. The wafer polishing apparatus according to claim 5, characterized in that, The throwing arm includes a positioning groove; The projectile frame has a positioning block adapted to the positioning slot, and the projectile frame is connected to the projectile arm through the positioning slot and the positioning block.

8. A coating apparatus, characterized in that, include: The equipment includes a loading device, a wafer polishing device, several process tanks, and several unloading devices. Wherein, the wafer polishing device is the wafer polishing device according to any one of claims 5-7; The coating equipment is a chemical plating equipment.

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