Phase-shift photomask preparation method, device and photolithography method

Abstract

The present application provides a method, device and photolithography method for preparing a phase-shift photomask, wherein the method for preparing the phase-shift photomask includes: measuring the critical dimensions of the structure after etching the first etching layer; obtaining measurement results based on the critical dimension measurement analysis; adjusting the process parameters based on the measurement results, etching the second etching layer and performing critical dimension measurement, and obtaining the target phase-shift photomask. By optimizing the process and adding CD measurement after etching the first etching layer, not only can CD errors be discovered in a timely manner, but also the critical dimensions of the phase-shift photomask pattern can be adapted and adjusted by dynamically adjusting the etching formula, which effectively prevents the CD error of the front-end process from being transmitted backward, and ultimately improves the dimensional accuracy of the phase-shift photomask. There is no need to re-update all manufacturing process conditions to repeatedly try to prepare and apply the phase-shift photomask when the VTT performance of the critical dimensions of the phase-shift photomask pattern is poor, as in the prior art.

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