Method for manufacturing a ferrite isolator film microstrip substrate local load
Patent Information
- Application Number
- CN202311552293.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2023-11-17
- Publication Date
- 2026-09-18
- Estimated Expiration
- 2043-11-17
AI Technical Summary
[0003]目前的铁氧体薄膜微带基板与负载元件连接是通过外接的方式完成的，其要求铁氧体薄膜微带基板与负载元件之间具备额外的电路设计和布局，大大的降低了铁氧体隔离器环形器的可靠性，同时，外接负载的方式也导致了整体器件的尺寸增加，占用更多的空间
[0034] By adopting the above technical solution, a load can be locally integrated on the ferrite isolator thin film microstrip substrate to reduce the volume of the ferrite isolator circulator and improve its reliability.
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Figure CN117748082B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of electronic component processing technology, and in particular to a method for fabricating a localized load on a ferrite isolator thin-film microstrip substrate. Background Technology
[0002] A ferrite isolator circulator is a passive microwave device that enables unidirectional signal transmission. Typically three-port or four-port, it utilizes the unique gyromagnetism of the ferrite base material to ensure that electromagnetic waves propagate in a single direction, delivering all power to the load while significantly attenuating reflected waves. This unidirectional transmission characteristic can be used to isolate the signal source from the effects of load variations. A ferrite isolator circulator generally consists of a ferrite thin-film microstrip substrate, wires, and matching circuitry.
[0003] Currently, the connection between the ferrite thin film microstrip substrate and the load element is completed externally. This requires additional circuit design and layout between the ferrite thin film microstrip substrate and the load element, which greatly reduces the reliability of the ferrite isolator circulator. At the same time, the external load method also leads to an increase in the overall size of the device and occupies more space.
[0004] Therefore, how to locally integrate the load on the ferrite isolator thin-film microstrip substrate to reduce the volume of the ferrite isolator circulator and improve its reliability has become an urgent technical problem to be solved. Summary of the Invention
[0005] The main objective of this invention is to provide a method for fabricating a localized load on a ferrite isolator thin-film microstrip substrate, which aims to integrate the load locally on the ferrite isolator thin-film microstrip substrate to reduce the volume of the ferrite isolator circulator and improve its reliability.
[0006] To achieve the above objectives, this invention proposes a method for fabricating a localized load on a ferrite isolator thin-film microstrip substrate, comprising the following steps:
[0007] A TaN layer, a WTi layer, and an Au layer are sequentially formed on a thin-film microstrip substrate. A first photoresist is coated on the Au layer. After the first photoresist is exposed and developed, the unexposed areas are etched to form load pillars of a predetermined size on the thin-film microstrip substrate. The load pillars are TaN and WTi from bottom to top.
[0008] A NiCr layer completely covering the load pillar is formed on a thin-film microstrip substrate, and an Au layer is formed on the NiCr layer. A second photoresist is coated on the Au layer. After the second photoresist located on both sides of the load pillar is exposed and developed, the unexposed area is etched to expose the TaN layer located between the exposed second photoresist, thereby forming a local load on the thin-film microstrip substrate. The distance between the exposed photoresist on both sides of the load pillar is smaller than the width of the load pillar.
[0009] In one embodiment of this application, before sequentially forming a TaN layer, a WTi layer, and an Au layer on the thin-film microstrip substrate, the following steps are further included:
[0010] S1: Use a neutral cleaning agent to sonicate the thin film microstrip substrate for the first preset time;
[0011] S2: Use deionized water to sonicate the thin-film microstrip substrate for a second preset time;
[0012] S3: Use acetone to sonicate the thin film microstrip substrate for the third preset time;
[0013] S4: Repeat steps S2 to S3 at least once.
[0014] In one embodiment of this application, the first preset time is 50 minutes; the second preset time is 30 minutes; and the third preset time is 40 minutes.
[0015] In one embodiment of this application, the thin-film microstrip substrate is a ferrite ceramic substrate.
[0016] In one embodiment of this application, the resistance of the TaN layer is 50Ω / □, and the thickness of the WTi is 0.1μm.
[0017] In one embodiment of this application, coating a first photoresist onto an Au layer and exposing and developing the first photoresist includes the following steps:
[0018] The spin coater first uses a speed of 600 rpm for 5 seconds, and then uses 1800 rpm for 15 seconds to cover the Au layer with the first photoresist.
[0019] The thin film microstrip substrate with the first photoresist was baked at 115°C for 5 minutes to remove moisture from the first photoresist.
[0020] After baking, the exposure energy is 7.6 mw / cm². 2 The first photoresist was exposed for 15 seconds.
[0021] After exposure is complete, the first photoresist is developed for a fourth preset time.
[0022] In one embodiment of this application, a fourth preset time T is defined, where 90 seconds ≥ T ≥ 60 seconds.
[0023] In one embodiment of this application, the process of forming a NiCr layer that completely covers the load pillars on a thin-film microstrip substrate further includes the following steps on the thin-film microstrip substrate with the load pillars:
[0024] S1: Immerse the thin-film microstrip substrate in an acidic solution for a second preset time;
[0025] S2: Use a neutral cleaning agent to ultrasonically clean the thin-film microstrip substrate for the first preset time.
[0026] S3: Use deionized water to sonicate the thin-film microstrip substrate for the second preset time;
[0027] S4: Use acetone to sonicate the thin film microstrip substrate for the third preset time;
[0028] S5: Repeat steps S3 to S4 at least once.
[0029] In one embodiment of this application, etching the unexposed area to expose the TaN layer located between the exposed second photoresist includes the following steps:
[0030] S1: The Au layer is etched using a gold etching solution at a temperature of 30 degrees Celsius for 50 seconds.
[0031] S2: After etching is complete, soak the thin film microstrip substrate in acetone for 5 minutes to remove the second photoresist on the thin film microstrip substrate.
[0032] S3: The NiCr layer on the thin film microstrip substrate was etched using NiCr etching solution at a temperature of 75 degrees Celsius for 20 seconds. After etching, it was rinsed with deionized water for 2 minutes.
[0033] S4: Use hydrogen peroxide at 70 degrees Celsius for 10 seconds to remove the WTi film layer on the loaded TaN, exposing the TaN layer located between the exposed second photoresist.
[0034] By adopting the above technical solution, a load can be locally integrated on the ferrite isolator thin film microstrip substrate to reduce the volume of the ferrite isolator circulator and improve its reliability. Attached Figure Description
[0035] The present invention will now be described in detail with reference to specific embodiments and accompanying drawings, wherein:
[0036] Figure 1 This is a schematic flowchart of the first embodiment of the present invention;
[0037] Figure 2A schematic diagram illustrating the structure for forming a TaN layer, a WTi layer, and an Au layer on a substrate;
[0038] Figure 3 This is a schematic diagram of the structure on which the first photoresist is coated on the AU layer;
[0039] Figure 4 To Figure 3 A schematic diagram of the structure of the thin-film microstrip substrate after photolithography etching;
[0040] Figure 5 To remove Figure 4 A schematic diagram of the Au layer and the first photoresist in the image;
[0041] Figure 6 In order to be in Figure 5 A schematic diagram of the structure after being covered with a thin metal film NiCr;
[0042] Figure 7 In order to be in Figure 6 A schematic diagram of the structure with an upper AU layer and a second photoresist;
[0043] Figure 8 To Figure 7 A schematic diagram of the structure undergoing photolithography etching;
[0044] Figure 9 This is a schematic diagram of a structure for forming a localized load on a thin-film microstrip substrate. Detailed Implementation
[0045] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the following specific embodiments are only used to explain the invention and do not constitute a limitation thereof.
[0046] like Figures 1 to 9 As shown, in order to achieve the above objectives, this invention proposes a method for fabricating a localized load on a ferrite isolator thin-film microstrip substrate, comprising the following steps:
[0047] A TaN layer, a WTi layer, and an Au layer are sequentially formed on a thin-film microstrip substrate. A first photoresist is coated on the Au layer. After the first photoresist is exposed and developed, the unexposed areas are etched to form load pillars of a predetermined size on the thin-film microstrip substrate. The load pillars are TaN and WTi from bottom to top.
[0048] A NiCr layer completely covering the load pillar is formed on a thin-film microstrip substrate, and an Au layer is formed on the NiCr layer. A second photoresist is coated on the Au layer. After the second photoresist located on both sides of the load pillar is exposed and developed, the unexposed area is etched to expose the TaN layer located between the exposed second photoresist, thereby forming a local load on the thin-film microstrip substrate. The distance between the exposed photoresist on both sides of the load pillar is smaller than the width of the load pillar.
[0049] Specifically, in this application, TaN is tantalum nitride; the WTi layer is a tungsten-titanium alloy; the Au layer refers to gold; and NiCr refers to a nickel-chromium alloy.
[0050] First, prepare the thin-film microstrip substrate and pre-treat it, such as by grinding, polishing, cleaning and baking. This can remove dirt from the surface of the thin-film microstrip substrate and ensure that the substrate surface is in good condition, thereby ensuring that the subsequent substrate surface load resistance is uniform, consistent and has high adhesion.
[0051] A TaN layer, a WTi layer, and an Au layer are sequentially formed on a thin-film microstrip substrate. The TaN layer, WTi layer, and Au layer are deposited sequentially on the thin-film microstrip substrate by magnetron sputtering. The TaN layer provides impedance properties, the WTi layer provides structural support, and the Au layer provides protection.
[0052] A first photoresist is coated onto the Au layer. The photoresist is then evenly coated using a spin coater at 600 rpm for 5 seconds to achieve a smooth surface. The spin coater speed is then increased to 1800 rpm for 15 seconds to ensure no photoresist buildup around the substrate edges, thus forming the first photoresist layer. The first photoresist layer is then baked at 115 degrees Celsius for 5 minutes to remove moisture, improve its strength, and reduce its surface viscosity.
[0053] The first photoresist was exposed and developed using a photolithography machine. Exposure was performed using a mask template, where specific areas of the photoresist were exposed to ultraviolet light, thereby altering its chemical properties. The exposure energy was 7.6 mW / cm². 2 Exposure time: 15 seconds. Development time: 1 minute to 1 minute 30 seconds. Then harden the film and bake at 120 degrees Celsius for 20 minutes.
[0054] After exposure, a development process is performed to remove the unexposed photoresist and form a photomask. A suitable developer is used to dissolve the unexposed photoresist, leaving the photoresist in the exposed areas.
[0055] A thin-film microstrip substrate is placed in an etching chamber, and the areas not covered by the photomask are etched. Using a suitable etchant, the metal layers (Au, WTi, and TaN) in the uncovered areas are removed, thereby forming load pillars of predetermined size on the thin-film microstrip substrate. The load pillars are arranged from bottom to top as TaN and WTi layers.
[0056] A NiCr layer completely encapsulates the load pillar. The NiCr layer is formed by magnetron sputtering, with a thickness of 0.05 μm. The NiCr layer provides resistivity and corrosion resistance, protecting the load pillar.
[0057] An Au layer is formed on the NiCr layer. The Au layer provides electrical conductivity to connect or transport electrons.
[0058] A second photoresist is coated onto the Au layer. The photoresist is then evenly spread using a spin coater at 600 rpm for 5 seconds to achieve a smooth surface. The spin coater speed is then increased to 1800 rpm for 15 seconds to ensure no photoresist buildup around the substrate edges, thus forming the second photoresist layer. The second photoresist layer is then baked at 115 degrees Celsius for 5 minutes to remove moisture, improve its strength, and reduce its surface viscosity.
[0059] The second photoresist located on both sides of the support pillar was exposed and developed using a photolithography machine. Exposure was performed using a mask template, where specific areas of the photoresist were exposed to ultraviolet light, thereby altering their chemical properties. The exposure energy was 7.6 mw / cm², the exposure time was 5 seconds, and the development time was 50 to 70 seconds.
[0060] Unexposed photoresist is removed, along with WTi, exposing the TaN layer located between the exposed second photoresist layers, thus forming a localized load on the thin-film microstrip substrate. Development uses a suitable developer to dissolve the unexposed photoresist, removing the photoresist on both sides of the load pillars and exposing the TaN layer.
[0061] By adopting the above technical solution, a load can be locally integrated on the ferrite isolator thin film microstrip substrate to reduce the volume of the ferrite isolator circulator and improve its reliability.
[0062] In one embodiment of this application, before sequentially forming a TaN layer, a WTi layer, and an Au layer on the thin-film microstrip substrate, the following steps are further included:
[0063] S1: Use a neutral cleaning agent to sonicate the thin film microstrip substrate for the first preset time;
[0064] S2: Use deionized water to sonicate the thin-film microstrip substrate for a second preset time;
[0065] S3: Use acetone to sonicate the thin film microstrip substrate for the third preset time;
[0066] S4: Repeat steps S2 to S3 at least once.
[0067] Specifically, the prepared thin-film microstrip substrate is cleaned by first using a neutral cleaning agent to perform ultrasonic cleaning. Ultrasonic cleaning involves immersing the substrate in an ultrasonic bath containing a neutral cleaning agent, utilizing the vibration of ultrasonic waves to remove contaminants from the substrate surface.
[0068] The thin-film microstrip substrate is then ultrasonically cleaned using deionized water. Ultrasonic cleaning involves immersing the substrate in deionized water and utilizing the vibration of ultrasonic waves to further clean the substrate surface, removing residual contaminants and impurities.
[0069] Finally, the thin-film microstrip substrate was ultrasonically cleaned using acetone. Ultrasonic cleaning involves immersing the substrate in acetone and utilizing the vibration of ultrasonic waves to thoroughly clean the substrate surface, removing any residual contaminants and organic matter.
[0070] Repeat steps 2 through 4 at least once. This ensures that the surface of the thin-film microstrip substrate meets the required cleanliness, reducing contamination and impact on subsequent processing steps.
[0071] The above technical solution effectively removes contaminants and organic matter from the substrate surface, ensuring the quality and reliability of subsequent processing steps. Ultrasonic cleaning can further improve the cleaning effect.
[0072] In one embodiment of this application, the first preset time is 50 minutes; the second preset time is 30 minutes; and the third preset time is 40 minutes.
[0073] Specifically, the first preset time is set to 50 minutes, the second preset time is set to 30 minutes, and the third preset time is set to 40 minutes. This ensures that contaminants and organic matter are thoroughly removed, resulting in a highly clean substrate surface. At the same time, it helps to improve production efficiency, reduce processing time, and thus increase output.
[0074] In one embodiment of this application, the thin-film microstrip substrate is a ferrite ceramic substrate.
[0075] Specifically, the thin-film microstrip substrate is a ferrite ceramic substrate, which has good high-temperature stability and can operate in high-temperature environments without significant performance degradation. It also possesses high mechanical strength and hardness, enabling it to withstand significant physical pressure and stress.
[0076] In one embodiment of this application, the resistance of the TaN layer is 50Ω / □, and the thickness of the WTi layer is 0.1μm.
[0077] Specifically, the TaN layer has a resistance of 50Ω / □, indicating that the TaN layer has low resistance per unit area and good electronic conductivity. It can efficiently conduct current and exhibits low inductance and capacitance effects in high-frequency and fast circuits, contributing to improved signal transmission speed and reduced signal distortion. The WTi layer has a thickness of 0.1μm, providing sufficient protection without significantly increasing device size or adversely affecting circuit performance.
[0078] In one embodiment of this application, coating a first photoresist onto an Au layer and exposing and developing the first photoresist includes the following steps:
[0079] The spin coater first uses a speed of 600 rpm for 5 seconds, and then uses 1800 rpm for 15 seconds to cover the Au layer with the first photoresist.
[0080] The thin film microstrip substrate with the first photoresist was baked at 115°C for 5 minutes to remove moisture from the first photoresist.
[0081] After baking, the exposure energy is 7.6 mw / cm². 2 The first photoresist was exposed for 15 seconds.
[0082] After exposure is complete, the first photoresist is developed for a fourth preset time.
[0083] Specifically, the spin coater is set to 600 rpm and rotated continuously for 5 seconds. Then the speed is adjusted to 1800 rpm and rotated for another 15 seconds to evenly coat the Au layer with the first photoresist. This is achieved by controlling the spin coater's speed to ensure the photoresist is evenly distributed across the substrate surface.
[0084] The thin-film microstrip substrate with the first photoresist is placed in an oven and baked at 115°C for 5 minutes. This removes moisture from the first photoresist to improve the effectiveness of subsequent exposure and development. The baking process is controlled by adjusting the oven temperature and time.
[0085] The substrate with the first photoresist was exposed using an exposure device. The exposure energy was set to 7.6 mW / cm². 2 The exposure time is 15 seconds. By controlling the energy and time parameters of the exposure equipment, specific areas in the photoresist are exposed to form the desired pattern.
[0086] The exposed first photoresist is developed. According to the fourth preset time setting, the substrate with the exposed pattern is placed in the developer solution and developed for a certain period of time. The developer solution dissolves the unexposed photoresist, leaving the desired photoresist pattern.
[0087] By employing the above technical solution and using spin-coating steps with different speeds and times, the uniformity and thickness of the photoresist coverage can be precisely controlled. The baking step removes moisture from the photoresist, improving the accuracy and repeatability of exposure and development, ensuring the formation of accurate photoresist patterns. The processing steps are relatively short, allowing for photoresist processing to be completed in a short time. By adjusting the spin-coating machine's speed, baking temperature and time, exposure energy and time, and development time, the processing flow can be adjusted and optimized to meet different processing requirements.
[0088] In one embodiment of this application, a fourth preset time T is defined, where 90 seconds ≥ T ≥ 60 seconds.
[0089] In one embodiment of this application, the process of forming a NiCr layer that completely covers the load pillars on a thin-film microstrip substrate further includes the following steps on the thin-film microstrip substrate with the load pillars:
[0090] S1: Immerse the thin-film microstrip substrate in an acidic solution for a second preset time;
[0091] S2: Use a neutral cleaning agent to ultrasonically clean the thin-film microstrip substrate for the first preset time.
[0092] S3: Use deionized water to sonicate the thin-film microstrip substrate for the second preset time;
[0093] S4: Use acetone to sonicate the thin film microstrip substrate for the third preset time;
[0094] S5: Repeat steps S3 to S4 at least once.
[0095] Specifically, S1: The thin-film microstrip substrate is immersed in an acidic solution for a second preset time. By placing the substrate in the acidic solution, surface contaminants and impurities are removed through a chemical reaction.
[0096] S2: The thin-film microstrip substrate is placed in a neutral cleaning agent and ultrasonically cleaned. For a predetermined time, ultrasonic waves release tiny bubbles in the neutral cleaning agent and generate impact force to clean the substrate surface. Ultrasonic cleaning effectively removes residual contaminants and impurities.
[0097] S3: The thin-film microstrip substrate is placed in deionized water and ultrasonically cleaned. According to a second preset time, the ultrasonic waves release tiny bubbles in the deionized water and generate impact force to further clean the substrate surface. The use of deionized water removes any residue left during the ultrasonic cleaning process.
[0098] S4: Place the thin-film microstrip substrate in acetone and perform ultrasonic cleaning. According to the third preset time, the ultrasonic waves release the tiny bubbles in the acetone and generate impact force to remove organic contaminants and residues on the substrate surface.
[0099] S5: Repeat steps S3 to S4 at least once. This further ensures the cleanliness and purity of the substrate surface. Multiple ultrasonic cleaning and rinsing processes thoroughly remove contaminants from the substrate surface, preparing it for subsequent processing steps.
[0100] By employing the above technical solution, a combination of acidic solution immersion and ultrasonic cleaning can effectively remove organic and inorganic contaminants from the substrate surface, ensuring the purity of the substrate surface. Ultrasonic cleaning utilizes the action of ultrasonic waves, enabling the cleaning of large areas of the substrate in a short time, thus improving cleaning efficiency.
[0101] In one embodiment of this application, etching the unexposed area to expose the TaN layer located between the exposed second photoresist includes the following steps:
[0102] S1: The Au layer is etched using a gold etching solution at a temperature of 30 degrees Celsius for 50 seconds.
[0103] S2: After etching is complete, soak the thin film microstrip substrate in acetone for 5 minutes to remove the second photoresist on the thin film microstrip substrate.
[0104] S3: The NiCr layer on the thin film microstrip substrate was etched using NiCr etching solution at a temperature of 75 degrees Celsius for 20 seconds. After etching, it was rinsed with deionized water for 2 minutes.
[0105] S4: Use hydrogen peroxide at 70 degrees Celsius for 10 seconds to remove the WTi film layer on the loaded TaN, exposing the TaN layer located between the exposed second photoresist.
[0106] Specifically, the microstrip substrate to be processed is placed in a gold etching solution. The temperature of the etching solution is set to 30 degrees Celsius. The etching time is controlled at 50 seconds to ensure an appropriate etching depth. Through the chemical reaction between the gold etching solution and the Au layer, the Au layer is dissolved and removed, thus achieving the etching of the Au layer.
[0107] After the gold etching solution completes the etching process, the thin-film microstrip substrate is transferred to acetone for immersion. The immersion time is 5 minutes to ensure complete removal of the second photoresist on the thin-film microstrip substrate. The dissolving effect of acetone effectively removes the second photoresist from the thin-film microstrip substrate, resulting in a clean substrate surface.
[0108] The thin-film microstrip substrate, which had been soaked in acetone, was placed in a NiCr etching solution. The temperature of the etching solution was set to 75 degrees Celsius. The etching time was controlled to be 20 seconds to moderately etch the NiCr layer.
[0109] After etching, the substrate surface is rinsed with deionized water for 2 minutes to clean it. The chemical reaction of the NiCr etching solution can dissolve and remove the NiCr layer on the thin film microstrip substrate, while rinsing with deionized water helps to clean the substrate surface and remove residual etching solution and impurities.
[0110] The NiCr etched thin-film microstrip substrate was immersed in hydrogen peroxide. The temperature of the hydrogen peroxide was set to 70 degrees Celsius. The etching time was controlled to be 10 seconds, allowing the hydrogen peroxide to remove the WTi film layer on the TaN, thereby exposing the TaN layer located between the exposed second photoresist.
[0111] By employing the above technical solution and selecting specific etching solutions and processing conditions, specific metal layers or films can be selectively removed, achieving precise processing of different materials. The use of acetone and deionized water effectively removes photoresist and etching solution residues, ensuring the cleanliness of the substrate surface. The processing steps are relatively short, allowing the process to be completed in a relatively short time, thus improving production efficiency.
[0112] The above description is merely a preferred embodiment of the present invention and does not limit the patent scope of the present invention. Any equivalent structural transformations made using the contents of the present invention's specification and drawings under the inventive concept of the present invention, or direct / indirect applications in other related technical fields, are included within the patent protection scope of the present invention.
Claims
1. A method for fabricating a ferrite isolator thin film microstrip substrate local load, characterized in that, Includes the following steps: A TaN layer, a WTi layer, and an Au layer are sequentially formed on a thin-film microstrip substrate. A first photoresist is coated on the Au layer. After the first photoresist is exposed and developed, the unexposed areas are etched to form load pillars of a predetermined size on the thin-film microstrip substrate. The load pillars are TaN and WTi from bottom to top. A NiCr layer completely covering the load pillar is formed on a thin-film microstrip substrate, and an Au layer is formed on the NiCr layer. A second photoresist is coated on the Au layer. After exposing and developing the second photoresist located on both sides of the load pillar, the Au layer is etched sequentially with a gold etching solution, the second photoresist is removed, the NiCr layer is etched with a NiCr etching solution, and the WTi film layer located on the TaN layer is removed with hydrogen peroxide. This process etches the unexposed areas and exposes the TaN layer located between the exposed second photoresist layers, thereby forming a localized load on the thin-film microstrip substrate. The distance between the exposed photoresist layers on both sides of the load pillar is less than the width of the load pillar.
2. The method for fabricating a localized load on a ferrite isolator thin-film microstrip substrate as described in claim 1, characterized in that, Before sequentially forming the TaN layer, WTi layer, and Au layer on the thin-film microstrip substrate, the following steps are also included: S1: Use a neutral cleaning agent to sonicate the thin film microstrip substrate for the first preset time; S2: Use deionized water to sonicate the thin-film microstrip substrate for a second preset time; S3: Use acetone to sonicate the thin film microstrip substrate for the third preset time; S4: Repeat steps S2 to S3 at least once.
3. The method for fabricating a partial load on a ferrite isolator thin-film microstrip substrate as described in claim 2, characterized in that, The first preset time is 50 minutes; the second preset time is 30 minutes; and the third preset time is 40 minutes.
4. The method for fabricating a localized load on a ferrite isolator thin-film microstrip substrate as described in claim 1, characterized in that, The thin-film microstrip substrate is a ferrite ceramic substrate.
5. The method for fabricating a localized load on a ferrite isolator thin-film microstrip substrate as described in claim 1, characterized in that, The sheet resistance of the TaN layer is 50 Ω / □, and the thickness of the WTi layer is 0.1 μm.
6. The method for fabricating a localized load on a ferrite isolator thin-film microstrip substrate as described in claim 1, characterized in that, The first photoresist is coated onto the Au layer, and then exposed and developed, including the following steps: The spin coater first uses a speed of 600 rpm for 5 seconds, and then uses 1800 rpm for 15 seconds to coat the Au layer with the first photoresist. The thin film microstrip substrate with the first photoresist was baked at 115°C for 5 minutes to remove moisture from the first photoresist. After baking, the first photoresist is exposed to an exposure energy of 7.6 mw / cm² for 15 seconds. After exposure is complete, the first photoresist is developed for a fourth preset time.
7. The method for fabricating a partial load on a ferrite isolator thin-film microstrip substrate as described in claim 6, characterized in that, Define the fourth preset time T, where 90 seconds ≥ T ≥ 60 seconds.
8. The method for fabricating a partial load on a ferrite isolator thin-film microstrip substrate as described in claim 3, characterized in that, Before forming a NiCr layer that completely covers the load pillars on the thin-film microstrip substrate, the following steps are performed on the thin-film microstrip substrate with the load pillars: S1: Immerse the thin-film microstrip substrate in an acidic solution for a second preset time; S2: Use a neutral cleaning agent to sonicate the thin-film microstrip substrate for the first preset time; S3: Use deionized water to sonicate the thin-film microstrip substrate for the second preset time; S4: Use acetone to sonicate the thin film microstrip substrate for the third preset time; S5: Repeat steps S3 to S4 at least once.
9. The method for fabricating a partial load on a ferrite isolator thin-film microstrip substrate as described in claim 1, characterized in that, Etching the unexposed areas to expose the TaN layer located between the exposed second photoresist includes the following steps: S1: The Au layer is etched using a gold etching solution at a temperature of 30 degrees Celsius for 50 seconds. S2: After etching is complete, soak the thin film microstrip substrate in acetone for 5 minutes to remove the second photoresist on the thin film microstrip substrate. S3: The NiCr layer on the thin film microstrip substrate is etched using NiCr etching solution at a temperature of 75 degrees Celsius for 20 seconds. After etching, the substrate is rinsed with deionized water for 2 minutes. S4: Use hydrogen peroxide at 70 degrees Celsius for 10 seconds to remove the WTi film layer on the loaded TaN, exposing the TaN layer located between the exposed second photoresist.
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