一种用于电流模控制的Buck电源变换器的过流保护电路

By using high-voltage MOSFET on-resistance sampling and optimizing current detection with a self-biasing circuit, the high power consumption and low accuracy problems of traditional overcurrent protection circuits are solved, achieving low-power, fast-response overcurrent protection, which is suitable for current-mode controlled Buck power converters.

CN117748420BActive Publication Date: 2026-07-17CHONGQING UNIV OF POSTS & TELECOMM +1

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
CHONGQING UNIV OF POSTS & TELECOMM
Filing Date
2024-01-29
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

Traditional overcurrent protection circuits suffer from manufacturing errors when detecting inductor current, are greatly affected by power supply voltage and temperature, and have high power consumption, which cannot meet the high-speed and low-power requirements of modern electronic circuits.

Method used

Using the same high-voltage MOSFET on-resistance sampling method as the system-level power transistor, combined with a self-biasing circuit and a comparator circuit, power consumption is reduced and inductor current changes are responded to quickly. The detection accuracy is optimized by temperature-compensated resistor voltage divider and hysteresis structure. The low-power self-biasing circuit is designed to operate only when the lower power transistor is turned on.

Benefits of technology

It achieves low power consumption and fast response overcurrent protection under wide voltage and high frequency conditions, reduces process errors and temperature effects, and meets the high speed and low power consumption requirements of modern electronic circuits.

✦ Generated by Eureka AI based on patent content.

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Abstract

本发明属于电源管理芯片技术领域,具体涉及一种用于电流模控制的Buck电源变换器的过流保护电路,包括:自偏置电路、采样电路、比较器电路以及输出整形电路;所述自偏置电路分别为采样电路提供采样电流和为比较器电路提供偏置电流;所述采样电路用于对电感电流进行采样;将采样得到的开关节点电平和开关参考功率地信号输入到比较器电路中进行比较;然后将比较器电路的输出信号输入到输出整形电路中,得到整形后的信号;本发明采用了利用与系统级功率管相同的高压MOS管的导通电阻采样办法,降低了传统串联电阻采样方法在工艺电阻的功率损耗,同时也消除了电源电压、大气压强、工作温度对于系统电路的影响。
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