多孔钨基材料及其制备方法
By combining SiO2/C composite materials with tungsten powder of different particle sizes, the problem of low density in porous tungsten-based materials was solved, and porous tungsten-based materials with high density and excellent microstructure uniformity were prepared, thereby improving the hardness, heat resistance and corrosion resistance of the materials.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- XIAN BAODE JIUTU NEW MATERIAL CO LTD
- Filing Date
- 2023-11-30
- Publication Date
- 2026-07-17
AI Technical Summary
In the prior art, porous tungsten-based materials have a relatively low density, which affects the material's density and high-temperature resistance.
Porous tungsten-based materials were prepared by using SiO2/C composite material as a preform and through cold isostatic pressing and sintering processes. The dispersibility of SiO2/C material and the wettability of carbon layer were utilized to promote copper infiltration. Combined with tungsten powder of different particle sizes to fill the pores, the density and microstructure uniformity of the material were improved.
It improves the hardness, heat resistance and corrosion resistance of porous tungsten-based materials, enhances the fluidity and permeability of the copper phase, and improves the overall strength and density of the material.