A high-conductivity, high-strength high-entropy alloy thin film and its preparation method

Abstract

This invention discloses a high-entropy alloy thin film with high conductivity and high strength, and its preparation method, belonging to the field of metal surface modification. The high-entropy alloy thin film is composed of five elements: Ti, Al, Cr, Si, and Cu. The specific composition of the high-entropy alloy thin film, by atomic percentage, is as follows: 30%–40% titanium, 30%–40% aluminum, 15%–35% chromium, 3%–10% silicon, and 5%–20% copper. The preparation steps include surface pretreatment of the substrate, preparation of the alloy target, and preparation of the high-entropy alloy thin film by cathodic arc ion plating. The high-entropy alloy thin film prepared by this invention has controllable composition, thickness, and hardness, good adhesion to the substrate, dense surface, and a thickness of 1.6–2.0 μm. It exhibits high hardness and low resistivity, with a minimum resistivity of 0.67 μΩ / m. Furthermore, the preparation method of this invention is simple and can reduce costs.

Description

Technical Field

[0001] This invention relates to the field of metal surface modification technology, and in particular to a high-conductivity, high-strength high-entropy alloy thin film and its preparation method. Background Technology

[0002] High strength and high electrical conductivity are core properties sought after in materials across many fields. Traditional materials often present a trade-off between strength and conductivity, necessitating the development of novel materials to meet this requirement. High-entropy alloys are a class of novel materials with unique structures and properties, exhibiting high strength, high hardness, and excellent electrical conductivity.

[0003] High-entropy alloys are alloys composed of multiple elements. Compared with traditional alloys, high-entropy alloys have a higher entropy value in their crystal lattice structure, that is, a higher atomic dislocation density and interatomic disorder. This special structure gives high-entropy alloys excellent mechanical properties.

[0004] High-entropy alloy thin films on metal surfaces are materials with unique structures and properties, possessing advantages such as high melting point, high hardness, high corrosion resistance, and good thermal stability. However, their disadvantages are also significant. Traditional high-entropy alloy thin films suffer from high resistivity, mismatched coefficients of thermal expansion, and susceptibility to oxidation, affecting conductivity and stability. Due to limitations in their composition and structure, they face difficulties in prolonged operation under extreme environments. Therefore, there is a need to develop an efficient and low-cost high-entropy alloy thin film and its preparation method to meet the requirements of high strength and high conductivity. Summary of the Invention

[0005] The purpose of this invention is to provide a high-conductivity, high-strength high-entropy alloy thin film and its preparation method, which has controllable thickness and low resistivity, and can effectively solve the problems of low strength and high resistivity of traditional high-entropy alloy thin films.

[0006] To achieve the above objectives, the present invention adopts the following technical solution:

[0007] In a first aspect, the present invention provides a high-entropy alloy thin film with high conductivity and high strength, having a chemical composition of TiAlSiCrCu, composed of five elements: Ti, Al, Cr, Si, and Cu. The specific composition of the high-entropy alloy thin film by atomic percentage is as follows: 30%–40% titanium, 30%–40% aluminum, 15%–35% chromium, 3%–10% silicon, and 5%–20% copper.

[0008] Furthermore, the thickness of the high-entropy alloy film is 1.6–2.0 μm, and the resistivity is as low as 0.67 μΩ / m.

[0009] Secondly, the present invention also provides a method for preparing the above-mentioned high-conductivity, high-strength, high-entropy alloy thin film, comprising the following steps:

[0010] Step 1: Surface pretreatment of the substrate: Remove rust from the substrate with sandpaper, then polish the substrate surface, and then clean it with acetone and alcohol in an ultrasonic manner. Dry it at room temperature for later use.

[0011] Step 2, Preparation of alloy targets: According to the required proportion of components, pure metal fan-shaped targets are prepared in the corresponding proportion. The targets are spliced ​​into alloy targets by splicing targets to obtain four types of targets: TiAl, TiSi, AlCr, and Cu. These targets are then placed on the corresponding target positions in the cathode arc ion plating vacuum chamber.

[0012] Step 3: Prepare high-entropy alloy thin films by cathodic arc ion plating: Place the pretreated substrate from Step 1 into the cathodic arc ion plating vacuum chamber, close the vacuum chamber, turn on the heating device, and evacuate; introduce argon gas and use Ar... + Ion etching pretreatment is performed on the substrate surface. After the substrate reaches a predetermined temperature, the sample stage is rotated and nitrogen gas is introduced for cathodic arc ion plating. TiAl alloy targets, Cu targets, TiSi alloy targets, and AlCr alloy targets are sequentially used for deposition and the process is repeated a certain number of times to prepare a high-entropy alloy thin film. The resulting high-entropy alloy thin film has controllable composition, thickness, and hardness, and exhibits low resistivity.

[0013] Furthermore, in step 1, the matrix is ​​any common metal matrix selected from titanium alloy, stainless steel, and iron and its alloys.

[0014] Furthermore, in step 1, the substrate is derusted using sandpaper of 400-5000 grit in sequence; after derusting and polishing, the substrate is placed in acetone and alcohol for ultrasonic cleaning for 10 minutes each.

[0015] Furthermore, in step 2, the composition ratio of the TiAl alloy target is Ti:Al = 30–70:30–70, the composition ratio of the TiSi alloy target is Ti:Si = 70–90:10–30, the composition ratio of the AlCr alloy target is Al:Cr = 10–35:65–90, and the Cu target is 100% Cu. As an example, the composition and ratio of each target could be TiAl (65 / 35), TiSi (80 / 20), AlCr (20 / 80), and Cu (100).

[0016] Furthermore, the target assembly method involves assembling Ti, Al, Si, Cr, and Cu sheets at a certain apex angle on the basis of an evenly distributed structure.

[0017] Furthermore, in step 3, the vacuuming operation involves evacuating the cathode arc ion plating vacuum chamber to a background vacuum level of 1.5 × 10⁻⁶. -3Pa ~ 2.5 × 10 -3 Pa.

[0018] Furthermore, in step 3, Ar is used. + During the ion etching pretreatment, the argon gas flow rate is 55 sccm to 60 sccm, the purity is above 99.99%, the total etching time is 60 min, the bias voltage applied for the first 30 min is 300 V to 400 V, and the bias voltage applied for the last 30 min is 180 V to 250 V.

[0019] Furthermore, in step 3, the predetermined temperature reached by the substrate is 380℃~400℃, the sample stage rotation speed is 2r / min~3r / min, the flow rate of nitrogen gas is 900sccm~950sccm, the purity is above 99.99%, and the working pressure is 3.5Pa~5.0Pa.

[0020] Furthermore, in step 3, the power of the TiAl alloy target is 10.0kW to 11.0kW, the bias voltage is 25V to 45V, and the deposition time is 5min to 10min; the power of the Cu target is 8.0kW to 11.0kW, the bias voltage is 15V to 45V, and the deposition time is 5min to 15min; the power of the TiSi alloy target is 9.0kW to 10.5kW, the bias voltage is 20V to 40V, and the deposition time is 10min to 20min; and the power of the AlCr alloy target is 8.5kW to 11.0kW, the bias voltage is 95V to 110V, and the deposition time is 20min to 30min.

[0021] Furthermore, in step 3, the loop is repeated a total of 3 times.

[0022] Compared with the prior art, the present invention provides a high-conductivity, high-strength high-entropy alloy thin film and its preparation method, which has the following beneficial effects:

[0023] This invention prepares TiAlSiCrCu high-entropy alloy thin films on substrate surfaces by controlling the parameters of a cathodic arc ion plating process. The prepared films exhibit excellent adhesion to the substrate, a dense surface, and controllable composition, thickness, and hardness. The thickness ranges from 1.6 to 2.0 μm, and the films demonstrate high hardness and low resistivity, with a minimum resistivity of 0.67 μΩ / m. This invention simplifies the preparation process, reduces costs, and yields uniform high-entropy alloy thin films with superior performance. The highly conductive and high-strength high-entropy alloy thin films prepared using this method have broad market prospects and application potential in fields such as electronic devices, energy storage, and transmission. Attached Figure Description

[0024] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0025] Figure 1 This is a Rockwell hardness indentation diagram of the high-entropy alloy thin film in Example 1 of the present invention;

[0026] Figure 2 This is a schematic cross-sectional view of the high-entropy alloy thin film in Embodiment 1 of the present invention for repairing scratches;

[0027] Figure 3 The resistivity / hardness relationship diagrams are shown for the high-entropy alloy thin films prepared in Examples 1-3 and the comparative examples. Detailed Implementation

[0028] The technical solution of the present invention will be clearly and completely described below through detailed embodiments. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0029] Example 1

[0030] This embodiment provides a high-conductivity, high-strength, high-entropy alloy thin film with a chemical composition of TiAlSiCrCu, composed of five elements: Ti, Al, Cr, Si, and Cu, in a molar ratio of 37:34:19:5:5.

[0031] The preparation method of this high-conductivity, high-strength, high-entropy alloy thin film includes the following steps:

[0032] Step 1: Surface pretreatment of the substrate surface

[0033] (1) Surface rust removal and polishing: The substrate is made of stainless steel. The substrate is rusted by sandpaper with a grit of 400 to 5000 grit, and then the surface of the substrate is polished.

[0034] (2) Surface cleaning: After rust removal and polishing, the substrate is placed in acetone and alcohol for ultrasonic cleaning for 10 minutes each, and then dried at room temperature for later use.

[0035] Step 2: Preparation of alloy target material

[0036] According to the required component ratio, pure metal fan-shaped targets with corresponding proportions are prepared. The targets are spliced ​​into alloy targets by splicing the targets. Four types of targets with component ratios of TiAl (65 / 35), TiSi (80 / 20), AlCr (20 / 80), and Cu (100%) are obtained and placed on the corresponding target positions in the cathode arc ion plating vacuum chamber.

[0037] Step 3: Prepare high-entropy alloy thin films by cathodic arc ion plating.

[0038] (1) Place the pretreated substrate from step 1 along with the substrate disk into the cathode arc ion plating vacuum chamber, close the vacuum chamber, turn on the heating device, and evacuate to a background vacuum level of 2.0 × 10⁻⁶. -3 Approximately Pa; introduce high-purity argon gas (purity greater than 99.99%), and use Ar... + The substrate surface was pretreated by ion etching. The argon gas flow rate was 60 sccm, the total etching time was 60 min, the bias voltage applied for the first 30 min was 300 V, and the bias voltage applied for the last 30 min was 180 V.

[0039] (2) After the substrate temperature reaches about 400℃, turn on the sample stage to rotate at a speed of 2r / min, introduce nitrogen gas (purity greater than 99.99%) with a flow rate of 900sccm, and maintain the gas pressure at 5.0Pa.

[0040] (3) Perform cathodic arc ion plating: First, turn on the TiAl alloy target, adjust the power of the TiAl alloy target to 10.5kW and the bias voltage to 30V, and turn off the TiAl alloy target after 10min of deposition; then turn on the Cu target, adjust the power of the Cu target to 8.5kW and the bias voltage to 20V, and turn off the Cu target after 5min of deposition; next, turn on the TiSi alloy target, adjust the power of the TiSi alloy target to 9.0kW and the bias voltage to 25V, and turn off the TiSi alloy target after 12min of deposition; then turn on the AlCr alloy target, adjust the power of the AlCr alloy target to 9.5kW and the bias voltage to 105V, and turn off the AlCr alloy target after 20min of deposition. Repeat this cycle three times to complete the deposition. The total deposition time is 141min. Turn off the target power supply and the bias power supply, and turn off the Ar and N2 gas flow valves. After the sample cools down to room temperature with the chamber temperature, the furnace door can be opened to remove the sample containing the high-entropy alloy film.

[0041] The prepared high-entropy alloy thin films were characterized as follows:

[0042] Among them, the Rockwell hardness indentation pattern of the high-entropy alloy film is as follows: Figure 1 As shown, the prepared high-entropy alloy film exhibits good adhesion to the substrate, with an adhesion strength rating of HF2. A schematic diagram of the repair cross-section of the high-entropy alloy film is shown below. Figure 2 As shown, calculations reveal that the thickness of the high-entropy alloy film is 1.69 μm. Figure 3 As shown, the resistivity of the high-entropy alloy film is 1.13 μΩ / m and the hardness is 31.90 GPa.

[0043] Example 2

[0044] This embodiment provides a high-conductivity, high-strength, high-entropy alloy thin film with a chemical composition of TiAlSiCrCu, composed of five elements: Ti, Al, Cr, Si, and Cu, in a molar ratio of 33:31:20:5:11.

[0045] The preparation method of this high-conductivity, high-strength, high-entropy alloy thin film includes the following steps:

[0046] Step 1: Surface pretreatment of the substrate surface

[0047] (1) Surface rust removal and polishing: The substrate is made of stainless steel. The substrate is rusted by sandpaper with a grit of 400 to 5000 grit, and then the surface of the substrate is polished.

[0048] (2) Surface cleaning: After rust removal and polishing, the substrate is placed in acetone and alcohol for ultrasonic cleaning for 10 minutes each, and then dried at room temperature for later use.

[0049] Step 2: Preparation of alloy target material

[0050] According to the required component ratio, pure metal fan-shaped targets with corresponding proportions are prepared. The targets are spliced ​​into alloy targets by splicing the targets. Four types of targets with component ratios of TiAl (65 / 35), TiSi (80 / 20), AlCr (20 / 80), and Cu (100%) are obtained and placed on the corresponding target positions in the cathode arc ion plating vacuum chamber.

[0051] Step 3: Prepare high-entropy alloy thin films by cathodic arc ion plating.

[0052] (1) Place the pretreated substrate from step 1 along with the substrate disk into the cathode arc ion plating vacuum chamber, close the vacuum chamber, turn on the heating device, and evacuate to a background vacuum level of 2.0 × 10⁻⁶. -3 Approximately Pa; introduce high-purity argon gas (purity greater than 99.99%), and use Ar... + The substrate surface was pretreated by ion etching. The argon gas flow rate was 60 sccm, the total etching time was 60 min, the bias voltage applied for the first 30 min was 300 V, and the bias voltage applied for the last 30 min was 180 V.

[0053] (2) After the substrate temperature reaches about 400℃, turn on the sample stage to rotate at a speed of 2r / min, introduce nitrogen gas (purity greater than 99.99%) with a flow rate of 900sccm, and maintain the gas pressure at 5.0Pa.

[0054] (3) Perform cathodic arc ion plating: First, turn on the TiAl alloy target, adjust the power of the TiAl alloy target to 10.5kW and the bias voltage to 30V, and turn off the TiAl alloy target after 10min of deposition; then turn on the Cu target, adjust the power of the Cu target to 9.0kW and the bias voltage to 20V, and turn off the Cu target after 7min of deposition; next, turn on the TiSi alloy target, adjust the power of the TiSi alloy target to 9.0kW and the bias voltage to 25V, and turn off the TiSi alloy target after 12min of deposition; then turn on the AlCr alloy target, adjust the power of the AlCr alloy target to 9.5kW and the bias voltage to 105V, and turn off the AlCr alloy target after 20min of deposition. Repeat this cycle three times to complete the deposition. The total deposition time is 147min. Turn off the target power supply and the bias power supply, and turn off the Ar and N2 gas flow valves. After the sample cools down to room temperature with the chamber temperature, the furnace door can be opened to remove the sample containing the high-entropy alloy film.

[0055] The prepared high-entropy alloy thin films were characterized as follows:

[0056] Among them, the Rockwell hardness indentation pattern of high-entropy alloy thin films is similar. Figure 1 As shown, the prepared high-entropy alloy film exhibits good adhesion to the substrate, with an adhesion strength rating of HF2. A similar schematic diagram of the repair cross-section of the high-entropy alloy film is also provided. Figure 2 As shown, calculations reveal that the thickness of the high-entropy alloy film is 1.81 μm. Figure 3 As shown, the resistivity of the high-entropy alloy film is 0.91 μΩ / m, and the hardness is 30.39 GPa.

[0057] Example 3

[0058] This embodiment provides a high-conductivity, high-strength, high-entropy alloy thin film with a chemical composition of TiAlSiCrCu, composed of five elements: Ti, Al, Cr, Si, and Cu, in a molar ratio of 31:30:19:5:15.

[0059] The preparation method of this high-conductivity, high-strength, high-entropy alloy thin film includes the following steps:

[0060] Step 1: Surface pretreatment of the substrate surface

[0061] (1) Surface rust removal and polishing: The substrate is made of stainless steel. The substrate is rusted by sandpaper with a grit of 400 to 5000 grit, and then the surface of the substrate is polished.

[0062] (2) Surface cleaning: After rust removal and polishing, the substrate is placed in acetone and alcohol for ultrasonic cleaning for 10 minutes each, and then dried at room temperature for later use.

[0063] Step 2: Preparation of alloy target material

[0064] According to the required component ratio, pure metal fan-shaped targets with corresponding proportions are prepared. The targets are spliced ​​into alloy targets by splicing the targets. Four types of targets with component ratios of TiAl (65 / 35), TiSi (80 / 20), AlCr (20 / 80), and Cu (100%) are obtained and placed on the corresponding target positions in the cathode arc ion plating vacuum chamber.

[0065] Step 3: Prepare high-entropy alloy thin films by cathodic arc ion plating.

[0066] (1) Place the pretreated substrate from step 1 along with the substrate disk into the cathode arc ion plating vacuum chamber, close the vacuum chamber, turn on the heating device, and evacuate to a background vacuum level of 2.0 × 10⁻⁶. -3 Approximately Pa; introduce high-purity argon gas (purity greater than 99.99%), and use Ar... + The substrate surface was pretreated by ion etching. The argon gas flow rate was 60 sccm, the total etching time was 60 min, the bias voltage applied for the first 30 min was 300 V, and the bias voltage applied for the last 30 min was 180 V.

[0067] (2) After the substrate temperature reaches about 400℃, turn on the sample stage to rotate at a speed of 2r / min, introduce nitrogen gas (purity greater than 99.99%) with a flow rate of 900sccm, and maintain the gas pressure at 5.0Pa.

[0068] (3) Perform cathodic arc ion plating: First, turn on the TiAl alloy target, adjust the power of the TiAl alloy target to 10.5kW and the bias voltage to 30V, and turn off the TiAl alloy target after 10min of deposition; then turn on the Cu target, adjust the power of the Cu target to 9.5kW and the bias voltage to 20V, and turn off the Cu target after 10min of deposition; next, turn on the TiSi alloy target, adjust the power of the TiSi alloy target to 9.0kW and the bias voltage to 25V, and turn off the TiSi alloy target after 12min of deposition; then turn on the AlCr alloy target, adjust the power of the AlCr alloy target to 9.5kW and the bias voltage to 105V, and turn off the AlCr alloy target after 20min of deposition. Repeat this cycle three times to complete the deposition. The total deposition time is 156min. Turn off the target power supply and the bias power supply, and turn off the Ar and N2 gas flow valves. After the sample cools down to room temperature with the chamber temperature, the furnace door can be opened to remove the sample containing the high-entropy alloy film.

[0069] The prepared high-entropy alloy thin films were characterized as follows:

[0070] Among them, the Rockwell hardness indentation pattern of high-entropy alloy thin films is similar. Figure 1 As shown, the prepared high-entropy alloy film exhibits good adhesion to the substrate, with an adhesion strength rating of HF2. A similar schematic diagram of the repair cross-section of the high-entropy alloy film is also provided. Figure 2 As shown, calculations reveal that the thickness of the high-entropy alloy film is 1.78 μm. Figure 3 As shown, the resistivity of the high-entropy alloy film is 0.67 μΩ / m, and the hardness is 29.31 GPa.

[0071] Comparative Example

[0072] This comparative example provides a high-entropy alloy thin film with a chemical composition of TiAlSiCr, which is composed of four elements: Ti, Al, Cr, and Si, in a molar ratio of 37:34:24:5.

[0073] The method for preparing this high-entropy alloy thin film includes the following steps:

[0074] Step 1: Surface pretreatment of the substrate surface

[0075] (1) Surface rust removal and polishing: The substrate is made of stainless steel. The substrate is rusted by sandpaper with a grit of 400 to 5000 grit, and then the surface of the substrate is polished.

[0076] (2) Surface cleaning: After rust removal and polishing, the substrate is placed in acetone and alcohol for ultrasonic cleaning for 10 minutes each, and then dried at room temperature for later use.

[0077] Step 2: Preparation of alloy target material

[0078] According to the required component ratio, pure metal fan-shaped targets with corresponding proportions are prepared. The targets are spliced ​​into alloy targets by splicing the targets. Four types of targets with component ratios of TiAl (65 / 35), TiSi (80 / 20), AlCr (20 / 80), and Cu (100%) are obtained and placed on the corresponding target positions in the cathode arc ion plating vacuum chamber.

[0079] Step 3: Prepare high-entropy alloy thin films by cathodic arc ion plating.

[0080] (1) Place the pretreated substrate from step 1 along with the substrate disk into the cathode arc ion plating vacuum chamber, close the vacuum chamber, turn on the heating device, and evacuate to a background vacuum level of 2.0 × 10⁻⁶. -3 Approximately Pa; introduce high-purity argon gas (purity greater than 99.99%), and use Ar... +The substrate surface was pretreated by ion etching. The argon gas flow rate was 60 sccm, the total etching time was 60 min, the bias voltage applied for the first 30 min was 300 V, and the bias voltage applied for the last 30 min was 180 V.

[0081] (2) After the substrate temperature reaches about 400℃, turn on the sample stage to rotate at a speed of 2r / min, introduce nitrogen gas (purity greater than 99.99%) with a flow rate of 900sccm, and maintain the gas pressure at 5.0Pa.

[0082] (3) Perform cathodic arc ion plating: First, turn on the TiAl alloy target, adjust the power of the TiAl alloy target to 10.5kW and the bias voltage to 30V, and turn off the TiAl alloy target after 10min of deposition; then turn on the TiSi alloy target, adjust the power of the TiSi alloy target to 9.0kW and the bias voltage to 25V, and turn off the TiSi alloy target after 12min of deposition; then turn on the AlCr alloy target, adjust the power of the AlCr alloy target to 9.5kW and the bias voltage to 105V, and turn off the AlCr alloy target after 20min of deposition. Repeat this cycle three times to complete the deposition. The total deposition time is 126min. Turn off the target power supply and the bias power supply, and turn off the Ar and N2 gas flow valves. After the sample cools down to room temperature with the chamber temperature, the furnace door can be opened to remove the sample containing the high-entropy alloy film.

[0083] The prepared high-entropy alloy thin films were characterized as follows:

[0084] Among them, the Rockwell hardness indentation pattern of high-entropy alloy thin films is similar. Figure 1 As shown, the prepared high-entropy alloy film exhibits good adhesion to the substrate, with an adhesion strength rating of HF2. A similar schematic diagram of the repair cross-section of the high-entropy alloy film is also provided. Figure 2 As shown, calculations reveal that the thickness of the high-entropy alloy film is 1.72 μm. Figure 3 As shown, the resistivity of the high-entropy alloy film is 2.31 μΩ / m and the hardness is 32.64 GPa.

[0085] As can be seen, this invention uses cathodic arc ion plating technology to prepare high-entropy alloy thin films with controllable thickness, controllable hardness, and low resistivity on a metal substrate.

[0086] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

[0087] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. A high-conductivity, high-strength, high-entropy alloy thin film, characterized in that, Composed of five elements: Ti, Al, Cr, Si, and Cu, the specific composition of the high-entropy alloy thin film, by atomic percentage, is as follows: 30%~40% titanium, 30%~40% aluminum, 15%~35% chromium, 3%~10% silicon, and 5%~20% copper. The thickness of the high-entropy alloy film is 1.6~2.0μm; The highly conductive and high-strength high-entropy alloy thin film is prepared by the following steps: Step 1: Surface pretreatment of the substrate: Remove rust from the substrate with sandpaper, then polish the substrate surface, and then clean it with acetone and alcohol in an ultrasonic manner. Dry it at room temperature for later use. Step 2, Preparation of alloy targets: According to the required proportion of components, pure metal fan-shaped targets are prepared in the corresponding proportion. The targets are spliced ​​into alloy targets by splicing targets to obtain four types of targets: TiAl, TiSi, AlCr, and Cu. These targets are then placed on the corresponding target positions in the cathode arc ion plating vacuum chamber. Step 3: Prepare high-entropy alloy thin films by cathodic arc ion plating: Place the pretreated substrate from Step 1 into the cathodic arc ion plating vacuum chamber, close the vacuum chamber, turn on the heating device, and perform vacuuming. Argon gas is introduced, and Ar is used + The substrate surface is pretreated by etching with ions. After the substrate reaches a predetermined temperature of 380℃~400℃, cathodic arc ion plating is performed under the conditions of sample stage rotation speed of 2r / min~3r / min, working gas pressure of 3.5Pa~5.0Pa, and nitrogen flow rate of 900sccm~950sccm. TiAl alloy target, Cu target, TiSi alloy target, and AlCr alloy target are turned on in sequence for deposition and coating, and the process is repeated 3 times to prepare a high-entropy alloy thin film.

2. The high-conductivity, high-strength, high-entropy alloy thin film according to claim 1, characterized in that, In step 1, the substrate is any one of titanium alloy, stainless steel, or iron and its alloys.

3. The high-conductivity, high-strength, high-entropy alloy thin film according to claim 1, characterized in that, In step 2, the composition ratio of the TiAl alloy target is Ti:Al = 30~70:30~70, the composition ratio of the TiSi alloy target is Ti:Si = 70~90:10~30, the composition ratio of the AlCr alloy target is Al:Cr = 10~35:65~90, and the Cu target is 100% Cu.

4. The high-conductivity, high-strength, high-entropy alloy thin film according to claim 1, characterized in that, In step 3, the vacuuming operation involves evacuating the cathode arc ion plating vacuum chamber to a background vacuum level of 1.5 × 10⁻⁶. -3 Pa ~ 2.5 × 10 -3 Pa.

5. The high-conductivity, high-strength, high-entropy alloy thin film according to claim 1, characterized in that, In step 3, Ar + During the ion etching pretreatment, the argon gas flow rate is 55 sccm~60 sccm, the total etching time is 60 min, the bias voltage applied for the first 30 min is 300V~400V, and the bias voltage applied for the last 30 min is 180V~250V.

6. The high-conductivity, high-strength, high-entropy alloy thin film according to claim 1, characterized in that, In step 3, the power of the TiAl alloy target is 10.0kW~11.0kW, the bias voltage is 25V~45V, and the deposition time is 5min~10min; the power of the Cu target is 8.0kW~11.0kW, the bias voltage is 15V~45V, and the deposition time is 5min~15min; the power of the TiSi alloy target is 9.0kW~10.5kW, the bias voltage is 20V~40V, and the deposition time is 10min~20min; and the power of the AlCr alloy target is 8.5kW~11.0kW, the bias voltage is 95V~110V, and the deposition time is 20min~30min.

Images