Angle adjustment method, adjustable stand and thin film processing device thereof

Abstract

The application discloses an angle adjusting method, an adjustable support and a film processing device thereof. The adjustable support comprises a circumferential adjusting member arranged outside a vacuum reaction cavity of the film processing device, wherein the circumferential adjusting member comprises a circumferential sliding groove; at least one fixed support, the bottom of which is in sliding connection with the circumferential sliding groove, wherein the fixed support can rotate along the circumferential sliding groove; and an inclination adjusting frame, the two ends of which are connected with the fixed support, wherein the inclination adjusting frame comprises a first position and a second position, the fixed support comprises a third position, the distance between the first position and the third position is greater than the distance between the second position and the third position, a temperature sensor is arranged on the inclination adjusting frame and can move along the inclination adjusting frame. The adjustable support can adjust the vertical inclination and the plane circumferential azimuth angle of the temperature sensor during measurement, thereby increasing the temperature measurement range of the temperature sensor and improving the flexibility of the temperature sensor arrangement.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment, and more specifically to an angle adjustment method, an adjustable support, and a thin film processing device thereof. Background Technology

[0002] Currently, processes such as plasma etching, physical vapor deposition (PVD), and chemical vapor deposition (CVD) are commonly used to microfabricate semiconductor components or substrates, for example, to manufacture flexible displays, flat panel displays, light-emitting diodes, and solar cells. Microfabrication involves various processes and steps, among which chemical vapor deposition and atomic layer deposition (ALD) are widely used. These thin-film processing processes can deposit a variety of materials, including a wide range of insulating materials, most metals, and metal alloys. These processes are generally performed in the high-vacuum reaction chamber of a thin-film processing apparatus.

[0003] With the continuous shrinking of semiconductor device feature sizes and the increasing integration of devices, higher and higher requirements are being placed on the uniformity of thin film processing on wafer surfaces. Although thin film processing equipment has undergone several upgrades and its performance has been greatly improved, there are still many shortcomings in terms of thin film deposition uniformity. In particular, with the increasing size of wafers, existing vapor deposition methods and equipment are no longer able to meet the uniformity requirements of thin film processing.

[0004] In thin film processing, the wafer growth environment is extremely demanding. Various process conditions affect the uniformity of the wafer surface thin film processing, such as the heating temperature field, the direction of reactive gas flow, and the accuracy of reaction temperature measurement. These directly determine the quality of the wafer thin film processing. However, in practical applications, temperature measurement within the chamber is often accompanied by large measurement errors or untimely temperature measurements. This may be due to factors such as the limited space within the chamber leading to a narrow measurement range of the temperature measuring device. This makes temperature measurement and control within the chamber complex and difficult to regulate, easily resulting in uneven heating temperature fields within the reaction chamber. If the process environment in the reaction area within the chamber is not completely consistent, it can cause undesirable phenomena such as uneven wafer surface thin film thickness, uneven composition, and uneven physical properties, thereby reducing the yield of wafer production. Therefore, it is necessary to improve existing thin film processing equipment to enhance the uniformity of wafer thin film processing. Summary of the Invention

[0005] The purpose of this invention is to provide an angle adjustment method, an adjustable bracket, and a thin film processing device thereof. The adjustable bracket combines a circumferential adjustment component, a fixed bracket, and a tilt adjustment bracket, allowing the vertical tilt angle and planar circumferential angle of the temperature sensor to be adjusted during measurement. This increases the temperature measurement range of the temperature sensor, enabling one temperature sensor to measure hundreds or even thousands of location points, improving the flexibility of temperature sensor setup. During the process, the temperature sensor can be verified by measuring multiple locations to further ensure the accuracy of temperature measurement.

[0006] To achieve the above objectives, the present invention is implemented through the following technical solution:

[0007] An adjustable support for a temperature sensing component in a thin-film processing apparatus, comprising:

[0008] A circumferential adjusting member is disposed outside the vacuum reaction chamber of the thin film processing apparatus, the circumferential adjusting member comprising a circumferential sliding groove;

[0009] At least one fixed bracket, the bottom of which is slidably connected to the circumferential groove, and the fixed bracket is circumferentially rotatable along the circumferential groove;

[0010] An angle adjustment frame is provided, with both ends connected to the fixed bracket. The angle adjustment frame includes a first position and a second position, and the fixed bracket includes a third position. The distance between the first position and the third position is greater than the distance between the second position and the third position. A temperature sensor is provided on the angle adjustment frame and the temperature sensor can move along the angle adjustment frame.

[0011] Optionally, the thin film processing apparatus includes a component that is transparent to the detection medium of the temperature sensor, wherein the detection direction of the detection medium of the temperature sensor is perpendicular to the surface of the component that is transparent to the detection medium along its detection path.

[0012] Optionally, the tilt adjustment frame is an arc-shaped support structure.

[0013] Optionally, the arc-shaped support structure can be a concave or convex structure.

[0014] Optionally, the central angle range corresponding to the tilt adjustment frame is 60° to 100°.

[0015] Optionally, an arc-shaped guide is provided between the temperature sensor and the tilt adjustment frame to guide the temperature sensor to move on the tilt adjustment frame.

[0016] Optionally, the arc-shaped guide includes arc-shaped T-shaped bosses and matching T-shaped grooves, the T-shaped grooves being used to guide the T-shaped bosses to move within them;

[0017] The T-shaped boss is disposed on the temperature sensor, and the T-shaped groove is disposed on the tilt adjustment frame; or, the T-shaped boss is disposed on the tilt adjustment frame, and the T-shaped groove is disposed on the temperature sensor.

[0018] Optionally, the temperature sensor is connected to the tilt adjustment frame via a connecting shaft, and the connecting shaft secures the temperature sensor to the tilt adjustment frame via a mechanical fastening device.

[0019] Optionally, the temperature sensor is mounted on the tilt adjustment frame via a connecting shaft, and the contact area between the connecting shaft and the tilt adjustment frame includes sharp edges.

[0020] Optional, also includes:

[0021] A connector that connects to the cavity of the thin film processing device;

[0022] The retractable device has its bottom connected to the top of the connector;

[0023] An observation window structure is provided, with one end connected to the retractable device and the other end connected to a temperature sensor. The temperature sensor is rotatable relative to the observation window structure. The observation window structure includes a transparent structure, which is always perpendicular to the direction of travel of the detection medium emitted by the temperature sensor.

[0024] Optionally, the retractable device is a corrugated pipe structure.

[0025] Optionally, the connector is a flange structure.

[0026] Optionally, the connector is connected to the retractable device via a mechanical fastening device;

[0027] The retractable device is connected to the observation window structure via a mechanical fastening device;

[0028] The temperature sensor is connected to the observation window structure via a mechanical fastening device.

[0029] Optionally, a thin film processing apparatus includes,

[0030] Vacuum reaction chamber;

[0031] Several heating devices are disposed outside the vacuum reaction chamber to provide heat energy to the vacuum reaction chamber;

[0032] The temperature measuring assembly includes a temperature sensor and the adjustable bracket.

[0033] Optionally, at least a portion of the vacuum reaction chamber is made of a material that allows the temperature sensor to detect the medium.

[0034] Optional, also includes:

[0035] An outer cavity is located on the outside of the vacuum reaction chamber.

[0036] Optionally, a circumferential adjustment element is disposed at the top of the outer cavity;

[0037] The top wall of the outer cavity is provided with a detection hole, and the connector is connected to the detection hole.

[0038] Optionally, the space between the outer cavity and the vacuum reaction chamber is a vacuum environment;

[0039] The area enclosed by the connector, the retractable device, and the observation window structure is a vacuum environment.

[0040] Optionally, the temperature sensor is an infrared pyrometer.

[0041] Optionally, a method for adjusting the measuring angle of the temperature measuring component of the thin film processing apparatus includes:

[0042] The adjusting fixed bracket rotates along the circumferential slide groove of the circumferential adjusting component;

[0043] Adjust the position of the temperature sensor on the tilt adjustment bracket to adjust the measurement angle of the temperature sensor.

[0044] Optionally, the detection direction of the temperature sensor's detection medium is perpendicular to the top wall of the vacuum reaction chamber.

[0045] Compared with the prior art, the present invention has at least the following advantages:

[0046] In the angle adjustment method, adjustable bracket and thin film processing device of the present invention, the adjustable bracket combines a circumferential adjustment component, a fixed bracket and an angle adjustment bracket, so that the vertical tilt angle and the planar circumferential angle of the temperature sensor can be adjusted during measurement, thereby increasing the temperature measurement range of the temperature sensor. One temperature sensor can measure hundreds or even thousands of location points, improving the flexibility of temperature sensor setting and temperature measurement. At the same time, the adjustable bracket can adjust the temperature sensor to perform multiple temperature measurements at the same location, ensuring the repeatability of temperature measurement at that measurement location.

[0047] Furthermore, the adjustable bracket allows the detection direction of the temperature sensor's detection medium to be perpendicular to a "transparent (transparent to the detection medium)" object on the detection path of the detection medium, reducing the influence of other components on the detection effect of the detection medium and improving the temperature measurement accuracy of the temperature sensor. Attached Figure Description

[0048] Figure 1 This is a schematic diagram of a thin film processing apparatus according to the present invention;

[0049] Figure 2 for Figure 1 A top view of a thin film processing apparatus;

[0050] Figure 3 This invention relates to a method for adjusting the measuring angle of a temperature measuring component.

[0051] Figure 4 This is a schematic diagram of another adjustable bracket according to the present invention;

[0052] Figure 5 This is a schematic diagram of another thin film processing apparatus according to the present invention;

[0053] Figure 6 for Figure 5 A top view of a thin film processing apparatus;

[0054] Figure 7 for Figure 5 A schematic diagram showing the vertical tilt angle adjustment of the temperature sensor in the vacuum reaction chamber for temperature measurement.

[0055] Figure 8 for Figure 5 A schematic diagram showing the adjustment of the planar circumferential azimuth angle for the temperature sensor in the vacuum reaction chamber to measure the temperature.

[0056] Figure 9 This is a schematic diagram of the planar circumferential azimuth angle adjustment for a temperature sensor to measure the temperature of a wafer. Detailed Implementation

[0057] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0058] It should be noted that, in this document, the terms "comprising," "including," "having," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or terminal device. Unless otherwise specified, an element defined by the phrase "comprising..." or "including..." does not exclude the presence of additional elements in the process, method, article, or terminal device that includes said element.

[0059] It should be noted that the accompanying drawings are all in a very simplified form and use non-precise ratios, and are only used to facilitate and clearly illustrate the purpose of the embodiments of the present invention.

[0060] Example 1

[0061] like Figure 1 The diagram illustrates a thin-film processing apparatus (chemical vapor deposition, CVD) according to the present invention. This apparatus includes a vacuum reaction chamber 110, which can be used to process one or more wafers W, including depositing material onto the upper surface of the wafers W. The vacuum reaction chamber 110 has a top wall 111 at its top end, a bottom wall 112 at its bottom end, and a side wall 113 extending between the top wall 111 and the bottom wall 112. The vacuum reaction chamber 110 includes an inlet opening at one end and an exhaust opening at the other end (not shown). Process gases for deposition flow into the interior space of the vacuum reaction chamber 110 from the inlet opening, perform the chemical vapor deposition process in the reaction region above the wafer W, and exit the chamber from the exhaust opening. The vacuum reaction chamber 110 is equipped with a wafer support structure 120, which includes a wafer carrier stage 121 and a support frame 122. The front of the wafer carrier stage 121 is used to support the wafer W for chemical vapor deposition. The support frame 122 is located below the wafer carrier stage 121 and is used to support the wafer carrier stage 121. Optionally, the support frame 122 is made of a non-metallic material to reduce the risk of contamination of the internal space of the chamber. Optionally, the top wall 111 and the bottom wall 112 are made of optically transparent or translucent materials that are transparent to thermal energy (such as quartz materials that are transparent to specific infrared bands).

[0062] Furthermore, such as Figure 1 As shown, the apparatus includes multiple heating devices 130 that provide heat to the vacuum reaction chamber 110, each heating device 130 being disposed above the vacuum reaction chamber 110. Optionally, the heating device 130 is a high-intensity tungsten filament lamp with a transparent quartz shell and containing a halogen gas such as iodine. The full-spectrum radiant heat energy generated by this high-intensity tungsten filament lamp is not significantly absorbed by the top wall 111 made of a heat-transparent material, ensuring that the heat energy generated by each heating device 130 reaches the vacuum reaction chamber 110 to the maximum extent. During the process, the vacuum reaction chamber 110 of the chemical vapor deposition apparatus is brought to the required process temperature by the heating devices 130, so that the process gas supplied to the vacuum reaction chamber 110 undergoes thermal decomposition, thereby depositing a thin film material on the upper surface of the wafer W. Optionally, the deposited thin film material can be a group III, group IV, and / or group V material, or a material including group III, group IV, and / or group V dopants. For example, the deposited thin film material can be one or more of gallium arsenide, gallium nitride, or aluminum gallium nitride.

[0063] To further detect the temperature status at various points within the vacuum reaction chamber 110, the thin film processing apparatus of the present invention also includes a temperature measuring component 140. The temperature measuring component 140 includes a temperature sensor 144 and an adjustable bracket supporting the temperature sensor 144. The adjustable bracket is disposed outside the vacuum reaction chamber 110. The adjustable bracket allows the circumferential azimuth angle and vertical tilt angle of the temperature sensor 144 during measurement to be adjustable, so that the temperature sensor 144 can measure the temperature of each component within the vacuum reaction chamber 110 from all directions, providing reliable data support for the control of process parameters during the process. At the same time, since the adjustable bracket is disposed outside the vacuum reaction chamber 110, the temperature sensor 144 performs temperature measurement in a non-contact manner, which does not occupy the limited space inside the vacuum reaction chamber 110 and is not limited by the size of the space inside the vacuum reaction chamber 110 or affected by the process environment.

[0064] Specifically, such as Figure 1 and Figure 2 As shown, Figure 2 for Figure 1 A top view of the thin-film processing apparatus shows that the adjustable support for the temperature measuring component 140 includes: a circumferential adjusting member 141, at least one fixed support 142, and an angle adjusting bracket 143. The circumferential adjusting member 141 includes a circumferential groove and is disposed above the vacuum reaction chamber 110. Optionally, the circumferential adjusting member 141 is fixed above the vacuum reaction chamber 110 by a support body. The bottom of the fixed support 142 is slidably connected to the circumferential groove, and the fixed support 142 can rotate circumferentially along the circumferential groove. The tilt adjustment frame 143 is connected to the fixed bracket 142 at both ends. The tilt adjustment frame 143 includes a first position 1431 and a second position 1432. The fixed bracket 142 includes a third position 1421. The vertical distance (H1) between the first position 1431 and the third position 1421 is greater than the vertical distance (H2) between the second position 1432 and the third position 1421. That is, the tilt adjustment frame 143 is a non-planar structure. At least one temperature sensor 144 is provided on the tilt adjustment frame 143 and the temperature sensor 144 can move along the tilt adjustment frame 143. The temperature sensor 144 emits a detection medium to a predetermined temperature measurement point to detect the temperature state at the predetermined position. When the temperature sensor 144 moves along the tilt adjustment frame 143 and the tilt angle changes, the tilt angle of the detection medium emitted by it also changes accordingly.

[0065] In this embodiment, the tilt adjustment frame 143 is a non-planar structure, and at least a portion of the tilt adjustment frame 143 has an undulating structure. When the temperature sensor 144 moves on the tilt adjustment frame 143, the movement trajectory of the temperature sensor 144 also undulates with the structural undulations of the tilt adjustment frame 143, and the tilt angle of the detected medium also changes accordingly, thereby realizing the vertical angle adjustment of the detection path 145 (temperature measuring line) of the detected medium; furthermore, the tilt adjustment frame 143 where the temperature sensor 144 is located is connected to the fixed bracket 142, and the fixed bracket 142 can rotate circumferentially along the circumferential groove of the circumferential adjusting member 141, and the tilt adjustment frame 143 it supports... The temperature sensor 144 can also rotate circumferentially, enabling adjustment of the planar circumferential azimuth angle of the temperature sensor 144. This allows it to rotate 360° on the plane, increasing the measurement range of the temperature sensor 144. Consequently, the temperature sensor 144 can perform omnidirectional angle measurements on the vacuum reaction chamber 110 and its internal components, improving the flexibility of temperature measurement and sensor 144 setup. Simultaneously, the adjustable bracket allows the temperature sensor 144 to perform multiple temperature measurements at the same position, ensuring the repeatability of temperature measurements at that position.

[0066] Furthermore, the thin film processing device includes a component that is transparent to the detection medium of the temperature sensor 144. The detection direction of the detection medium of the temperature sensor 144 is perpendicular to the surface of the component that is transparent to the detection medium on the detection path 145 of the detection medium, so as to reduce the refraction and reflection of the detection medium by the component that is transparent to the detection medium on the detection path 145, reduce the loss of the detection medium emitted by the temperature sensor 144, and further ensure the accuracy of its temperature measurement. At least a portion of the vacuum reaction chamber 110 is made of a material that allows the detection medium of the temperature sensor 144 to pass through. In one embodiment, the top wall 111 of the vacuum reaction chamber 110 is made of a material transparent to the detection medium. The temperature sensor 144 is used to measure the temperature of the wafer W inside the vacuum reaction chamber 110. When the detection path of the detection medium is not perpendicular to the upper surface of the top wall 111, the detection medium will inevitably be reflected and refracted at the top wall 111, significantly reducing its temperature measurement effect and accuracy. When the detection path 145 of the detection medium is perpendicular to the top wall 111, the loss of the detection medium emitted by the temperature sensor 144 along the detection path 145 can be effectively reduced, improving the accuracy of its temperature measurement. In practical applications, whether the detection path 145 of the temperature sensor 144 is perpendicular to the surface of the component transparent to the detection medium can be determined by the reflectance of the detection medium. Of course, other methods can also be used for determination, and this invention does not limit this.

[0067] like Figure 2As shown, in this embodiment, the circumferential adjusting member 141 is a planar circumferential fixed adjusting ring, which includes a circular groove. The temperature measuring assembly 140 includes a pair of parallel fixed supports 142. The fixed supports 142 are vertical fixed supports, each including a bottom support portion. This bottom support portion is slidably connected to the circular groove of the circumferential adjusting member 141, allowing the fixed supports 142 to rotate 360° along the circular groove, thereby adjusting its azimuth angle within the planar circumference. In actual use, a driving device (not shown) drives the fixed supports 142 to rotate along the circular groove of the circumferential adjusting member 141 to adjust the planar circumferential azimuth angle of the temperature sensor 144 carried by the fixed supports 142. Furthermore, both the circumferential adjusting member 141 and the fixed supports 142 are made of metal to ensure the mechanical strength and stability of the adjustable support. It should be noted that the shape of the circumferential adjusting member 141 is not limited to the above. It can also be other structures with circumferential grooves, such as elliptical or square. The present invention does not limit its shape, as long as it can realize the change of azimuth angle of the fixed bracket 142 along the groove of the circumferential adjusting member 141.

[0068] like Figure 1 As shown, in this embodiment, the adjustable bracket of the temperature measuring component 140 further includes a pair of parallel tilt adjustment brackets 143. The tilt adjustment bracket 143 is an upwardly protruding convex arc-shaped structure bracket, with its two ends connected to two fixed brackets 142 respectively. Further, the central angle range corresponding to the arc-shaped structure bracket is 60° to 100°. In this embodiment, the angle to the left of the vertical center line of the tilt adjustment bracket 143 is defined as negative, and the angle to the right is defined as positive. The temperature sensor 144 moves on the tilt adjustment bracket 143, allowing the angle adjustment range of its detection direction relative to the vertical center line of the tilt adjustment bracket 143 to be between -35°C and 35°C. Of course, the numerical range of the central angle corresponding to the tilt adjustment bracket 143 is not limited to the above, nor is the tilt adjustment range of the temperature sensor 144's detection medium limited to the above; it can also be other numerical ranges, which this invention does not limit. Optionally, the tilt adjustment bracket 143 is made of metal or non-metal materials, and its structure is simple and easy to process. It should be noted that the number and shape of the tilt adjustment brackets 143 are not limited to those described above. In other embodiments, they can also be of other quantities and structures, as long as the tilt angle of the temperature sensor 144 on the tilt adjustment brackets 143 can be adjusted. This invention does not impose any limitations on this. Furthermore, the number of the fixed brackets 142 is not limited to those described above. Depending on the actual application requirements, they can also be set to other numbers. This invention does not impose any limitations on this.

[0069] Furthermore, in this embodiment, the temperature sensor 144 is an infrared pyrometer, which utilizes the principle of infrared thermometry to measure the temperature of objects such as the wafer W, wafer stage 121, and cavity top wall 111 or side wall 113 in a non-contact manner by emitting infrared radiation. When the temperature sensor 144 is used to measure the temperature of the wafer W inside the vacuum reaction chamber 110, the top wall 111 of the vacuum reaction chamber 110 is made of a material that allows the infrared radiation of the infrared pyrometer to pass through. The infrared wavelength can pass through the top wall 111 but not through the wafer W, thus measuring the temperature state of the wafer W surface. When the temperature sensor 144 is used to measure the temperature of the top wall 111 of the vacuum reaction chamber 110, the infrared wavelength of the infrared pyrometer used cannot pass through the top wall 111. Of course, the type of temperature sensor 144 is not limited to the above; it can also be other types of temperature measuring devices. This invention does not limit this, and in practical applications, an appropriate temperature sensor 144 can be selected according to actual usage requirements. On the other hand, the present invention does not limit the number of temperature sensors 144 installed on the tilt adjustment frame 143, and can set them according to actual needs. Each temperature sensor 144 measures the temperature of the same or different components to improve the accuracy of detecting the temperature reaction field distribution inside the vacuum reaction chamber 100, thereby providing a reliable data basis for the control of process conditions. It is understood that the present invention also does not limit the number of temperature measuring components 140 installed above the vacuum reaction chamber 100. For example, in another embodiment, multiple temperature measuring components 140 are installed at different azimuth angle positions above the vacuum reaction chamber 100 to achieve omnidirectional temperature measurement of the vacuum reaction chamber 100 and its internal components.

[0070] Optionally, an arc-shaped guide is provided between the temperature sensor 144 and the tilt adjustment frame 143 to guide the temperature sensor 144 to move on the tilt adjustment frame 143, thereby changing its tilt angle and measurement range during measurement. Further, the arc-shaped guide includes arc-shaped T-shaped bosses and matching T-shaped grooves, the T-shaped grooves guiding the T-shaped bosses to move within them. In this embodiment, the tilt adjustment frame 143 has arc-shaped T-shaped grooves, and the temperature sensor 144 has arc-shaped T-shaped bosses that match the T-shaped grooves, allowing the T-shaped bosses of the temperature sensor 144 to move within the T-shaped grooves of the tilt adjustment frame 143. In actual use, the temperature sensor 144 is driven by a driving device, causing its T-shaped bosses to move along the T-shaped grooves of the tilt adjustment frame 143, thereby changing its position on the tilt adjustment frame 143 and adjusting the tilt angle of the temperature sensor 144. It is understood that, in another embodiment, the tilt adjustment frame 143 is provided with arc-shaped T-shaped bosses, and the temperature sensor 144 is provided with arc-shaped T-shaped grooves. Optionally, the driving device is a stepper motor. It should be noted that the driving device is not limited to the above, and it can also be other structures. The present invention does not limit this. Of course, the movement of the temperature sensor 144 on the tilt adjustment frame 143 and the rotation of the fixed bracket 142 along the circumferential sliding groove of the circumferential adjusting member 141 can also be directly adjusted manually by the operator. The present invention does not limit the adjustment driving source. Furthermore, a mechanical fastening device can also be provided. After the movement adjustment of the temperature sensor 144 on the tilt adjustment frame 143 is completed, the temperature sensor 144 and the tilt adjustment frame 143 are locked and fixed by the mechanical fastening device. Of course, it is also possible not to lock and fix them by the mechanical fastening device, but to fix them relative to each other by the friction between them. The present invention does not limit this.

[0071] It is understood that the fixing method of the temperature sensor 144 is not limited to the above-described method; other fixing methods are also possible, as long as the tilt angle adjustment and fixing of the temperature sensor 144 on the tilt adjustment frame 143 can be achieved. For example, in another embodiment, the tilt adjustment frame 143 has an arc-shaped through groove, and the temperature sensor 144 has a through hole corresponding to the arc-shaped through groove. A connecting shaft passes through the arc-shaped through groove and the through hole to connect the tilt adjustment frame 143 and the temperature sensor 144. Both ends of the connecting shaft include mechanical fastening devices (e.g., bolt assemblies) to lock and fix the temperature sensor 144 and the tilt adjustment frame 143. In actual use, adjusting the mechanical fastening devices allows the temperature sensor 144 to move along the arc-shaped through groove of the tilt adjustment frame 143 to adjust its tilt angle and measurement range during measurement. After adjusting the measurement state of the temperature sensor 144 to a predetermined state, adjusting the mechanical fastening devices locks it firmly onto the tilt adjustment frame 144 for subsequent temperature measurements. In another embodiment, the tilt adjustment bracket 143 has an arc-shaped through groove, and the temperature sensor 144 has a through hole corresponding to the arc-shaped groove. A connecting shaft passes through the arc-shaped through groove and the through hole to connect the tilt adjustment bracket 143 and the temperature sensor 144. The contact area between the connecting shaft and the arc-shaped through groove includes multiple sharp angles, which prevent the connecting shaft from rotating within the arc-shaped groove, so that the temperature sensor 144 can be fixed on the tilt adjustment bracket 143 without too many additional mechanical fastening devices. Of course, the groove structure on the tilt adjustment bracket 143 is not limited to arc shape; it can also be other shapes, as long as it can realize the tilt adjustment of the temperature sensor 144. The present invention does not limit this. Similarly, the tilt adjustment bracket 143 may not have an arc-shaped groove, but instead has multiple openings distributed in different positions, so that the connecting shaft passes through the openings and the through holes to lock and fix the two together.

[0072] Based on the same inventive concept, this invention also discloses a method for adjusting the measuring angle of the temperature measuring component 140 of the aforementioned thin film processing apparatus, such as... Figure 3 As shown, the method includes: adjusting the fixed bracket 142 to rotate along the circumferential groove of the circumferential adjusting member 141 to adjust the planar circumferential azimuth angle of the temperature sensor 144; and adjusting the position of the temperature sensor 144 on the tilt adjustment bracket 143 to adjust the tilt angle of the temperature sensor 144. It should be noted that the order of adjustment of the planar circumferential azimuth angle and the tilt angle of the temperature sensor 144 is not limited to the above. In other embodiments, the tilt angle can be adjusted first, followed by the planar circumferential azimuth angle. This invention does not restrict the order of adjustment. When adjusting the planar circumferential azimuth angle of the temperature sensor 144, the temperature sensor 144 and the tilt adjustment bracket 143 are in a locked and fixed state (tilt angle remains unchanged). When adjusting the tilt angle of the temperature sensor 144, the fixed bracket 142 and the circumferential adjusting member 141 are in a locked and fixed state (planar circumferential azimuth angle remains unchanged).

[0073] Furthermore, when the temperature sensor 144 is used to measure the temperature state of the wafer W within the vacuum reaction chamber 110, the top wall 111 of the vacuum reaction chamber 110 is made of a material permeable to the detection medium of the temperature sensor 144. In practical applications, to prevent slight refraction of the detection medium path by the top wall 111, which would cause slight loss of the detection medium along the detection path 145, the detection medium's forward direction (detection path) is perpendicular to the top wall 111 of the vacuum reaction chamber 110. This minimizes interference from the top wall 111 to the detection medium of the temperature sensor 144, ensuring that the temperature detected by the temperature sensor 144 is the accurate temperature at the predetermined detection location. This ensures the accuracy of the measurement data and, consequently, the accurate measurement of the temperature field distribution within the chamber. This provides reliable data support for adjusting process parameters during the manufacturing process, ensuring the quality of wafer W production and improving its yield.

[0074] It should be noted that the structure of the adjustable bracket of the temperature measuring component 140 in this invention is not limited to the above-described structure; it can also be other structures, as long as it can achieve the corresponding function of the adjustable bracket described above. This invention does not impose any limitations on this. For example, in another embodiment, such as... Figure 4 As shown, the adjustable support of the temperature measuring component 140 includes a circumferential adjusting member 141, a pair of fixed supports 142, and a tilt adjusting frame 143. A temperature sensor 144 is mounted on the tilt adjusting frame 143. The tilt adjusting frame 143 is a concave arc-shaped structure support, and the temperature sensor 144 can move on the tilt adjusting frame 143. The connection method between the temperature sensor 144 and the tilt adjusting frame 143 is similar to or the same as in this embodiment, and will not be described again here. Furthermore, the thin film processing apparatus of the present invention is not limited to the above-mentioned chemical vapor deposition apparatus; it can also be other types of thin film processing apparatus, such as an atomic layer deposition apparatus in another embodiment. The present invention does not limit its type.

[0075] Example 2

[0076] Based on the structural characteristics of the thin film processing device in Embodiment 1, this embodiment makes some changes to its cavity structure and the structure of the temperature measuring component 240, mainly making some changes to the adjustable bracket of the temperature measuring component 240.

[0077] like Figures 5 to 9 As shown in the figure, in this embodiment, the thin film processing device includes the components in Embodiment 1, and also includes an outer cavity 250. The outer cavity 250 is disposed outside the vacuum reaction chamber 210, and the heating device 230 is located in the space surrounded by the outer cavity 250 and the top wall of the vacuum reaction chamber 210.

[0078] Similar to or the same as Example 1, such as Figure 5 and Figure 6 As shown in the diagram, in this embodiment, the temperature measuring component 240 includes a temperature sensor 244 and an adjustable bracket. The adjustable bracket includes a circumferential adjusting member 241, a pair of fixed brackets 242, and a tilt adjusting bracket 243. The circumferential adjusting member 241 is disposed on the top of the outer cavity 250. Further, the adjustable bracket of the temperature measuring component 240 also includes a connector 246, a telescopic device 247, and an observation window structure 248. The connector 246 is connected to the outer cavity 250 of the thin film processing device, and the bottom of the telescopic device 247 is connected to the top of the connector 246. One end of the observation window structure 248 is connected to the telescopic device 247, and the other end is connected to the temperature sensor 244. The temperature sensor 244 can rotate relative to the observation window structure 248. The observation window structure 248 includes a transparent structure, which is always perpendicular to the direction of travel of the detection medium emitted by the temperature sensor 244, to reduce interference factors of the detection medium on the detection path 245.

[0079] In this embodiment, a detection hole is provided on the top wall of the outer cavity 250. The connector 246 is connected to the detection hole, and the bottom of the connector 246 passes through the detection hole into the space between the vacuum reaction chamber 210 and the outer cavity 250 to avoid the outer cavity 250 affecting the transmission of the detection medium of the temperature sensor 244. Furthermore, during the process, the area between the outer cavity 250 and the vacuum reaction chamber 210 is a vacuum environment. Because the bottom of the connector 246 passes through the detection hole on the top wall of the outer cavity 250, the area enclosed by the connector 246, the retractable device 247, and the observation window structure 248 is also a vacuum environment, further ensuring the vacuum level between the outer cavity 250 and the vacuum reaction chamber 210 and alleviating the pressure on the vacuum reaction chamber 210. It is understood that in other embodiments, the area between the outer cavity 250 and the vacuum reaction chamber 210 is an atmospheric pressure environment.

[0080] Optionally, the connector 246 is a flange structure; the telescopic device 247 is a bellows structure. When the outer cavity 250 and the vacuum reaction chamber 210 are in a vacuum environment, the connector 246 is a CF / KF flange made of metal. The end of the CF / KF flange without a connecting flange is welded to the detection hole on the top wall of the outer cavity 250, and the end with a connecting flange is connected to the bellows structure. The bellows structure is made of metal, with one end containing a connecting flange that matches the observation window structure 248 and is connected to the observation window structure 248, and the other end connected to the CF / KF flange. The bellows structure further ensures good sealing between the outer cavity 250 and the vacuum reaction chamber 210. Simultaneously, when the temperature sensor 244 undergoes arbitrary changes in planar circumferential azimuth and vertical tilt angle via the adjustable bracket, the bellows structure deforms and adjusts accordingly without affecting the vacuum level between the outer cavity 250 and the vacuum reaction chamber 210. It is understood that the structure of the connector 246 and the telescopic device 247 is not limited to the above-described structure, but can also be other structures that can achieve the same function, and the present invention does not limit them.

[0081] In this embodiment, the observation window structure 248 is an infrared window, comprising glass that allows only a specific wavelength of the detection medium from the temperature sensor 244 to pass through. This glass is perpendicular to the direction of travel of the detection medium from the temperature sensor 244 to avoid loss of the detection medium. Furthermore, this glass further ensures the airtightness of the space enclosed by the observation window structure 248, the retractable device 247, the connector 246, the outer cavity 250, and the top wall of the vacuum reaction chamber 210, helping to maintain the vacuum level of this space. Optionally, the glass material can be CaF2, MgF2, or BaF2; in this embodiment, the glass is made of CaF2. Furthermore, the temperature sensor 244 and the observation window structure 248 are connected by a mechanical fastening device. In this embodiment, the temperature sensor 244 and the observation window structure 248 are connected by a bearing assembly, which ensures the stability of the connection and allows the observation window structure 248 to rotate relative to the temperature sensor 244. This ensures that when the fixed bracket 242 rotates along the circumferential adjustment member 241, the temperature sensor 244 can also rotate accordingly, thereby achieving a change in its planar circumferential azimuth angle. Of course, the connection method between the temperature sensor 244 and the observation window structure 248 is not limited to the above; other connection methods are also possible, and this invention does not impose any limitations on them.

[0082] Furthermore, in this embodiment, the connector 246 is connected to the retractable device 247 via a mechanical fastening device, and the retractable device 247 is connected to the observation window structure 248 via a mechanical fastening device. Of course, the connection methods of the connector 246, the retractable device 247, and the observation window structure 248 are not limited to those described above; other connection methods are also possible, and this invention does not impose any limitations on them.

[0083] like Figure 7 and Figure 8 The diagram shown illustrates an example of temperature measurement and adjustment of the top wall of the vacuum reaction chamber 210 by the temperature measuring component 240 in this embodiment. The vertical tilt angle of the temperature sensor 244 can be adjusted by adjusting its position on the tilt adjustment bracket 243, as shown below. Figure 7 As shown, the temperature sensor 244 can be moved on the tilt adjustment bracket 243 in the direction of arrow 260. Furthermore, by adjusting the fixed bracket 242 to rotate along the circumferential groove of the circumferential adjustment member 241, the azimuth angle of the temperature sensor 244 carried by the fixed bracket 242 on the plane can be further adjusted, such as... Figure 8 As shown, the fixed bracket 242 can be adjusted in the direction of arrow 270, thereby changing the measuring angle of the temperature sensor 244 and enabling it to perform omnidirectional angle measurements of the vacuum reaction chamber 210 and its internal components. Figure 9 As shown, in another embodiment, a set of temperature measuring components 240 is additionally provided above the outer cavity 250 to measure the temperature state of the wafer W inside the vacuum reaction chamber 210. In this embodiment, the forward direction of the detection medium of the temperature sensor 244 is perpendicular to the top wall surface of the vacuum reaction chamber 210 to reduce the loss of the detection medium and improve the accuracy of its temperature measurement. In actual measurement, the fixed bracket 242 can be adjusted in the direction of arrow 280 to change the measurement angle of the temperature sensor 244 in the circumferential direction of the plane. Of course, the moving direction of the temperature sensor 244 on the tilt adjustment bracket 243 and the rotation direction of the fixed bracket 242 along the circumferential groove are not limited to the above. They can also be other directions, which can be adjusted according to the actual process requirements. For example, in one embodiment, the rotation direction of the fixed bracket 242 along the circumferential groove is adjusted to be clockwise.

[0084] In addition, other structures and the working methods of each component in this embodiment, such as the circumferential adjustment component 241, the fixed bracket 242 and the tilt adjustment bracket 243, are the same as those in Embodiment 1, and will not be described again here.

[0085] In summary, in the angle adjustment method, adjustable bracket, and thin film processing device of the present invention, the adjustable bracket combines the circumferential adjustment component 141, the fixed bracket 142, and the tilt adjustment bracket 143, etc., so that the vertical tilt angle and planar circumferential angle of the temperature sensor 144 can be adjusted during measurement, thereby increasing the temperature measurement area of ​​the temperature sensor 144. One temperature sensor 144 can measure hundreds or even thousands of location points, improving the flexibility of temperature sensor 144 setting and temperature measurement. At the same time, the adjustable bracket can adjust the temperature sensor 144 to perform multiple temperature measurements at the same location, ensuring the repeatability of temperature measurement at that measurement location.

[0086] Furthermore, the adjustable bracket allows the detection medium of the temperature sensor 144 to be perpendicular to the "transparent (transparent to the detection medium)" object on the detection path 145, reducing the influence of other components on the detection effect of the detection medium and improving the temperature measurement accuracy of the temperature sensor.

[0087] Furthermore, the adjustable bracket enables the temperature sensor 144 to adjust the temperature measurement angle of the vacuum reaction chamber 110 and its internal components under vacuum conditions. It has a simple structure, is easy to operate, and has high repeatability.

[0088] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. An adjustable bracket for a temperature measuring assembly in a thin-film processing apparatus, characterized in that, Include: A circumferential adjusting member is disposed outside the vacuum reaction chamber of the thin film processing apparatus, the circumferential adjusting member comprising a circumferential sliding groove; At least one fixed bracket, the bottom of which is slidably connected to the circumferential groove, and the fixed bracket is circumferentially rotatable along the circumferential groove; An angle adjustment frame is provided, with both ends connected to the fixed support. The angle adjustment frame is a non-planar structure. The angle adjustment frame includes a first position and a second position, and the fixed support includes a third position. The distance between the first position and the third position is greater than the distance between the second position and the third position. A temperature sensor is provided on the angle adjustment frame and the temperature sensor can move along the angle adjustment frame.

2. The adjustable bracket as described in claim 1, characterized in that, The thin-film processing apparatus includes a component that is transparent to the detection medium of the temperature sensor, wherein the detection direction of the detection medium of the temperature sensor is perpendicular to the surface of the component that is transparent to the detection medium along its detection path.

3. The adjustable bracket as described in claim 1, characterized in that, The tilt adjustment frame is an arc-shaped support structure.

4. The adjustable bracket as described in claim 3, characterized in that, The arc-shaped support structure can be concave or convex.

5. The adjustable bracket as described in claim 3, characterized in that, The central angle range corresponding to the tilt adjustment frame is 60°~100°.

6. The adjustable bracket as described in claim 3, characterized in that, An arc-shaped guide is provided between the temperature sensor and the tilt adjustment frame to guide the temperature sensor to move on the tilt adjustment frame.

7. The adjustable bracket as described in claim 6, characterized in that, The arc-shaped guide includes arc-shaped T-shaped bosses and matching T-shaped grooves, the T-shaped grooves being used to guide the T-shaped bosses to move within them; The T-shaped boss is disposed on the temperature sensor, and the T-shaped groove is disposed on the tilt adjustment frame; or, the T-shaped boss is disposed on the tilt adjustment frame, and the T-shaped groove is disposed on the temperature sensor.

8. The adjustable bracket as described in claim 1, characterized in that, The temperature sensor is connected to the tilt adjustment frame via a connecting shaft, and the connecting shaft secures the temperature sensor to the tilt adjustment frame via a mechanical fastening device.

9. The adjustable bracket as described in claim 1, characterized in that, The temperature sensor is mounted on the tilt adjustment frame via a connecting shaft, and the contact area between the connecting shaft and the tilt adjustment frame includes sharp edges.

10. The adjustable bracket as described in claim 1, characterized in that, Also includes: A connector that connects to the cavity of the thin film processing device; The retractable device has its bottom connected to the top of the connector; An observation window structure is provided, with one end connected to the retractable device and the other end connected to a temperature sensor. The temperature sensor is rotatable relative to the observation window structure. The observation window structure includes a transparent structure, which is always perpendicular to the direction of travel of the detection medium emitted by the temperature sensor.

11. The adjustable bracket as described in claim 10, characterized in that, The retractable device is a corrugated pipe structure.

12. The adjustable bracket as described in claim 10, characterized in that, The connector is a flange structure.

13. The adjustable bracket as described in claim 10, characterized in that, The connector is connected to the telescopic device via a mechanical fastening device; The retractable device is connected to the observation window structure via a mechanical fastening device; The temperature sensor is connected to the observation window structure via a mechanical fastening device.

14. A thin film processing apparatus, characterized in that, Include, Vacuum reaction chamber; Several heating devices are disposed outside the vacuum reaction chamber to provide heat energy to the vacuum reaction chamber; A temperature sensing assembly comprising a temperature sensor and an adjustable bracket as described in any one of claims 1 to 13.

15. The thin film processing apparatus as claimed in claim 14, characterized in that, At least a portion of the vacuum reaction chamber is made of a material that can be detected by a temperature sensor.

16. The thin film processing apparatus as claimed in claim 14, characterized in that, Also includes: An outer cavity is located on the outside of the vacuum reaction chamber.

17. The thin film processing apparatus as claimed in claim 16, characterized in that, A circumferential adjustment component is located at the top of the outer cavity; The top wall of the outer cavity is provided with a detection hole, and the connector is connected to the detection hole.

18. The thin film processing apparatus as claimed in claim 16, characterized in that, The space between the outer cavity and the vacuum reaction chamber is a vacuum environment; The area enclosed by the connectors, retractable devices, and observation window structure is a vacuum environment.

19. The thin film processing apparatus as claimed in claim 14, characterized in that, The temperature sensor is an infrared pyrometer.

20. A method for adjusting the measuring angle of a temperature measuring component in a thin film processing apparatus as described in any one of claims 14-19, characterized in that, Include: The adjusting fixed bracket rotates along the circumferential slide groove of the circumferential adjusting component; Adjust the position of the temperature sensor on the tilt adjustment bracket to adjust the measurement angle of the temperature sensor.

21. The method for adjusting the measuring angle of the temperature measuring component as described in claim 20, characterized in that, The detection direction of the temperature sensor's detection medium is perpendicular to the top wall of the vacuum reaction chamber.

Images