A temperature and pressure sensor cooperated with thermocouple and temperature and pressure sensitive resistance

CN117760580BActive Publication Date: 2026-09-22UNIV OF SCI & TECH BEIJING
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Patent Information

Application Number
CN202311836410.5
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2023-12-28
Publication Date
2026-09-22
Estimated Expiration
2043-12-28

AI Technical Summary

Benefits of technology

[0027]本发明主要工作原理在于利用温压敏感电阻作为N-型、P-型热电偶的连接头,并深入待探测环境中;首先利用热电偶测温不受环境压力变化影响的特性测量待测环境温度T,再向热电偶、温压敏感电阻回路施加恒定电流并在热电偶另一端测量电压V;将直接测量电压减去因温度产生的塞贝克电压VS以及在两端热电偶上的分压VTC获得温压敏感电阻两端压降VPT,即VPT=V-VS-VTC,其中VS与测量温度时热电偶所产生的温差电势近似相等,VTC为测量电流与热电偶电阻值的乘积;基于上述温压敏感电阻两端压降VPT和所施加恒定电流的大小,计算得到温压敏感电阻的阻值,并将该阻值与相应温度下该温压敏感电阻的电阻-压力曲线参考数据相对比,实现对环境压力的测量。通过对热电偶、温压敏感电阻材料组分设计,可进一步实现对环境温度、压力范围及灵敏度的调节。该技术优势在于可以在高压环境中快速获得温度、压力等环境信息,在深海、深地探测等领域具有应用价值。

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Abstract

A thermocouple and a temperature-pressure sensitive resistor are combined in a temperature-pressure sensor, belonging to the field of sensors. The temperature-pressure sensitive resistor is used as the connector for N-type and P-type thermocouples and is inserted into the environment to be detected. First, the ambient temperature T is measured using the characteristic that thermocouple temperature measurement is unaffected by changes in ambient pressure. Then, a constant current is applied to the thermocouple and temperature-pressure sensitive resistor circuit, and the voltage V at the other end of the thermocouple is measured. The Seebeck voltage V generated by temperature is subtracted from the directly measured voltage. S And the voltage drop V across the thermocouples at both ends TC Obtain the voltage drop V across the temperature and pressure sensitive resistor PT By combining the magnitude of the applied constant current, the resistance value of the temperature-pressure sensitive resistor is calculated, and this resistance value is compared with reference data of the resistance-pressure curve of the temperature-pressure sensitive resistor at the corresponding temperature to achieve the measurement of environmental pressure. This invention can quickly obtain environmental information such as temperature and pressure in high-pressure environments, and has application value in fields such as deep-sea and deep-earth exploration.
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Description

Technical Field

[0001] This invention belongs to the field of electronic information and sensors, and specifically relates to a temperature and pressure sensor that combines a thermocouple and a temperature and pressure sensitive resistor. Background Technology

[0002] In modern industry and scientific research, temperature and pressure sensors are key sensing technologies widely used in various large and medium-sized devices, testing equipment, and small wearable devices. [1-2] Temperature sensors are used to measure ambient temperature, while pressure sensors are used to measure the pressure of liquids or gases, playing an important role in fields such as automated control systems, medical equipment, the automotive industry, environmental monitoring, and aerospace. [3]

[0003] Traditional temperature and pressure sensors can be classified into resistive, capacitive, or semiconductor sensors based on their working principles. Resistive sensors utilize the thermistor or piezoresistive effect of materials, meaning the resistance of the material changes with temperature or pressure. Capacitive sensors utilize the thermistor or piezoresistive capacitance effect of materials, obtaining temperature or pressure information by measuring changes in the material's capacitance. Semiconductor sensors utilize the properties of semiconductor materials to provide higher accuracy and response speed, enabling the conversion between physical quantities such as electricity, light, temperature, sound, displacement, and pressure. [4-6] In recent years, significant progress has been made in the research and development of new temperature and pressure sensors. [7] On the one hand, sensor technology based on nanomaterials has enriched the application scenarios of sensors, extending their application scope to the surface and body of organisms. [8] Sensors made using nanomaterials can achieve higher sensitivity and faster response speed, thus providing more accurate and real-time temperature and pressure measurements. The high surface area and special structure of nanomaterials enable them to sense changes in temperature and pressure more effectively. In addition, the small size of nanomaterials allows for more miniaturized sensor designs, suitable for applications with limited space. [9]

[0004] However, current research on temperature and pressure sensors still has some limitations. For example, for traditional sensors, most sensor materials cannot be sensitive to both ambient temperature and pressure simultaneously, or their applicable temperature and pressure ranges are very limited, allowing sensing only in conventional environments. These limitations restrict the reliability and accuracy of traditional sensors in certain applications. For novel sensors, although nanomaterial sensors have many advantages, their manufacturing costs are high, and they still face some challenges in large-scale production. Therefore, further research and improvement in the field of temperature and pressure sensors remains of great value in overcoming these limitations and promoting their application development.

[10]

[0005] Silver-based chalcogenides, rare-earth nickel-based oxides, and vanadium oxides possess thermistor, piezoresistive, and metal-insulator phase transition properties in semiconductor materials, maintaining stable crystal structures in biological environments and other extreme conditions, making them excellent temperature and pressure sensor materials. Furthermore, the thermistor and piezoresistive effects of these materials can be modulated through elemental doping to suit different temperature or pressure environments. Additionally, silver-based chalcogenides exhibit good ductility, allowing them to be fabricated into materials meeting various morphological requirements and application scenarios through rolling and other processing methods. Therefore, based on the high sensitivity of these temperature and pressure sensitive materials to temperature and pressure changes, it is feasible to combine them with high-sensitivity thermocouples to create sensors that simultaneously sense and measure temperature and pressure.

[0006] In summary, the performance of existing temperature and pressure sensors mainly depends on the physical and chemical properties of the materials themselves. The application scenarios and resolution are directly limited by the material properties. There is an urgent need to develop new multifunctional sensing materials and combine them with traditional high-sensitivity sensor materials to be suitable for applications in a wide temperature and pressure range, especially for temperature and pressure sensing needs in extreme environments, so as to make temperature and pressure detection methods more efficient and diverse.

[0007] References:

[0008] [1] Yang Yongjun. Overview of the current status and development of temperature measurement technology [J]. Measurement Technology, 2009, 29(04): 62-65.

[0009] [2] Guo Bing, Wang Chong. Current status and development of pressure sensors [J]. China Instrument and Control, 2009, (05): 72-75.

[0010] 【3】Sun Shenghe. Development direction of modern sensors [J]. Journal of Electronic Measurement and Instrumentation, 2009, 23(01): 1-10.

[0011] [4] Wang Fang. Measurement principle and application of resistance temperature sensor [J]. Heilongjiang Metallurgy, 2007, (01): 33-35.

[0012] [5] Meng Wenshun, Yang Yunjing, Liu Yunpeng. Principle and application of capacitive sensors [J]. Modern Electronics Technology, 1999, (07): 78-81.

[0013] [6] Chen Yanjun. Application of semiconductor piezoresistive sensors [J]. Coal Engineering, 2005, (04): 71-72.

[0014] [7] You Zheng. Research progress and application prospects of intelligent sensor technology [J]. Science & Technology Review, 2016, 34(17): 72-78.

[0015] [8] Xu Gaixia, Wang Ping, Li Rong, Yan Weimin, Zheng Xiaoxiang. Nanosensing technology and its application in biomedicine [J]. Foreign Medical Sciences. Biomedical Engineering Section, 2002, (02): 49-54.

[0016] [9] Liu Kai, Zou Defu, Lian Wuzhou, Ma Liling, Ma Limin, Chen Zhidong. Research status and application of nanosensors [J]. Instrumentation Technology and Sensors, 2008, (01): 10-12.

[0017]

[10] Duan Jianrui, Li Bin, Li Shuaizhen. Research progress on commonly used novel flexible sensors [J]. Sensors & Microsystems, 2005, 34(11): 1-4+11. Summary of the Invention

[0018] This invention provides a temperature and pressure sensor combining a thermocouple and a temperature and pressure sensitive resistor. It utilizes the characteristic that thermocouple temperature measurement is unaffected by changes in ambient pressure to measure the ambient temperature T. A constant current is then applied to the thermocouple and temperature and pressure sensitive resistor circuit, and the voltage V at the other end of the thermocouple is measured. The Seebeck voltage V generated by temperature is subtracted from the directly measured voltage. S And the voltage drop V across the thermocouples at both ends TC Obtain the voltage drop V across the temperature and pressure sensitive resistor PT V PT =VV S -V TC It can quickly obtain environmental information such as temperature and pressure in high-pressure environments, and has application value in fields such as deep-sea and deep-earth exploration.

[0019] A temperature-pressure sensor combining a thermocouple and a temperature-pressure sensitive resistor is characterized by using the temperature-pressure sensitive resistor as a connector for N-type and P-type thermocouples, which is then inserted into the environment to be detected. First, the ambient temperature T is measured using the thermocouple's temperature measurement characteristic, which is unaffected by changes in ambient pressure. Then, a constant current is applied to the thermocouple and temperature-pressure sensitive resistor circuit, and the voltage V at the other end of the thermocouple is measured. Finally, the Seebeck voltage V generated by temperature is subtracted from the directly measured voltage. S And the voltage drop V across the thermocouples at both ends TC Obtain the voltage drop V across the temperature and pressure sensitive resistor PT V PT =VV S -V TC V S The potential difference generated by the thermocouple during temperature measurement is approximately equal to that generated by the thermocouple during temperature measurement, V TCThe constant current applied is multiplied by the resistance of the thermocouple; based on the voltage drop V across the aforementioned temperature-pressure sensitive resistor. PT The resistance value of the temperature-pressure sensitive resistor is calculated based on the magnitude of the applied constant current, and this resistance value is compared with the reference data of the resistance-pressure curve of the temperature-pressure sensitive resistor at the corresponding temperature to achieve the measurement of environmental pressure.

[0020] Furthermore, the structural feature of the temperature and pressure sensor comprising the synergistic thermocouple and the temperature and pressure sensitive resistor is that the temperature and pressure sensitive resistor is used to connect one end of two thermocouples (P-type and N-type), and the thermoelectric potential and overall resistance are measured at the other end of the two thermocouples. The thermocouple and the temperature and pressure sensitive resistor can be connected by contact, press-fit, co-sintering, or through leads or electrodes.

[0021] Furthermore, the resistance of the temperature-pressure sensitive resistor can also be measured by applying a constant voltage V and measuring the current I of the entire circuit. First, the ambient temperature T is measured using the characteristic that thermocouple temperature measurement is unaffected by changes in ambient pressure. Then, a constant voltage is applied to the thermocouple and temperature-pressure sensitive resistor circuit, and the current I is measured at the other end of the thermocouple. The applied constant voltage is then subtracted from the Seebeck voltage V generated by the temperature. S And the voltage drop V across the thermocouples at both ends TC Obtain the voltage drop V across the temperature and pressure sensitive resistor PT V PT =VV S -V TC V S The potential difference generated by the thermocouple during temperature measurement is approximately equal to that generated by the thermocouple during temperature measurement, V TC The measured current is the product of the thermocouple resistance; based on the voltage drop V across the aforementioned temperature and pressure sensitive resistor. PT The resistance value of the thermo-pressure sensitive resistor is calculated based on the magnitude of the measured current. This resistance value is then compared with the reference data of the resistance-pressure curve of the thermo-pressure sensitive resistor at the corresponding temperature to achieve the measurement of ambient pressure. The difference between this measurement method and the method of applying constant current to measure the total voltage of the circuit is that, in addition to the voltmeter used to measure the thermoelectric potential, an ammeter for measuring the current of the entire circuit is also required at the other end of the thermocouple. The final measurement results are the same for both methods.

[0022] Furthermore, the thermocouple is a temperature-sensitive material exhibiting the Seebeck effect, composed of two different metals or alloys. The temperature difference between its working and free ends can be converted into a potential difference through the thermoelectric effect. The thermocouple is insensitive to environmental pressure, and its resistance-temperature relationship remains essentially unchanged under different environmental pressures. In addition, since the magnitude of the thermoelectric potential depends only on the temperature difference between the working and free ends of the thermocouple, connecting or splicing other materials between the working ends of the thermocouple will not affect the magnitude of the generated thermoelectric potential. Types include platinum-platinum-rhodium 10 thermocouples, platinum-rhodium 30-platinum-rhodium 6 thermocouples, nickel-chromium-silicon-nickel-silicon thermocouples, and copper-copper-nickel thermocouples. Copper-nickel-iron thermocouples, nickel-chromium-copper-nickel thermocouples, and nickel-chromium-nickel-aluminum thermocouples are all options. The temperature measurement range and accuracy can be controlled through the selection of thermocouple materials and size design. For example, platinum-platinum-rhodium 10 thermocouples are preferred in the 600-1300℃ range; nickel-chromium-silicon-nickel-silicon thermocouples are preferred above 1200℃; platinum-rhodium 30-platinum-rhodium 6 thermocouples are preferred above 1300℃; magnetic nickel-chromium-nickel-aluminum thermocouples or non-magnetic nickel-chromium-copper-nickel thermocouples are preferred in the -200-1200℃ range; copper-nickel-iron thermocouples are preferred in the -40-750℃ range; and copper-copper-nickel thermocouples can be selected in the -250-350℃ range.

[0023] Furthermore, the resistivity of the temperature-pressure sensitive resistor material is sensitive to both ambient temperature and ambient pressure, exhibiting both thermistor and piezoresistive effects. Changes in ambient temperature and pressure alter the electronic and crystal structures of the material, thereby changing its resistance and forming a ternary function relationship of temperature-pressure-resistance. Given any two of these quantities, the third quantity can be determined using this functional relationship. The temperature-pressure relationship of the environmentally sensitive material is reversible, maintaining its original ternary function relationship essentially unchanged even after multiple temperature or pressure cycles. The environmentally sensitive material retains a stable crystal structure even in extreme environments (such as deep sea or deep earth environments with extreme temperatures or pressures). The temperature-pressure sensitive resistor material includes silver sulfide, doped silver sulfide, rare earth nickel-based oxides, and vanadium oxides. By selecting the appropriate temperature-pressure sensitive resistor material and designing its shape and size, the measurement pressure range and accuracy can be controlled.

[0024] Furthermore, the silver sulfide and doped silver sulfide can be modulated by replacing different group silver or group chalcogen elements to suit temperature and pressure sensing requirements in different temperature ranges. Silver sulfide Ag₂S is preferred from room temperature to 450K, and selenium-doped silver sulfide Ag₂S is preferred from room temperature to 425K. 1-x Se x (0≤x≤0.1), Nickel-doped silver sulfide Ag 2-x Ni x S(0≤x≤0.2), mercury-doped silver sulfide Ag2-x Hg x For S(0≤x≤0.4), tellurium-doped silver sulfide Ag₂S is preferred from room temperature to 375K. 1-x Te x (0≤x≤0.2), selenium-doped silver sulfide Ag2S 1-x Se x (0.3≤x≤0.5), Copper-doped silver sulfide Ag 2-x Cu x S(0≤x≤0.2); The silver sulfide and doped silver sulfide can be pressed into bulk samples by powder, or rolled into flexible strip or bar samples to be connected to thermocouples.

[0025] Furthermore, the rare-earth nickel-based oxide can be modulated by doping different A-site lanthanide elements or B-site transition metal elements to suit temperature and pressure sensing requirements in different temperature ranges. For temperatures ranging from liquid nitrogen to room temperature, a La-doped rare-earth nickel-based oxide with a mixture of A-site La and Pr is preferred. x Pr 1-x NiO3 (0≤x≤1), a rare earth nickel-based oxide with La and Nd doping at the A site. x Nd 1-x NiO3 (0≤x≤1), A-site Pr, Nd-doped rare earth nickel-based oxide Pr x Nd 1-x NiO3 (0≤x≤1), or rare earth nickel-based oxides NdFe doped with Co, Cu, Zn, Fe, or Mn at the B site. x Ni 1-x O3 (0≤x≤0.2), NdCo x Ni 1-x O3 (0≤x≤0.2), NdZn x Ni 1-x O3 (0≤x≤0.3), NdCu x Ni 1-x O3 (0≤x≤0.1); preferred A-site Sm, Nd mixed rare earth nickel-based oxide Sm at liquid nitrogen temperature up to 400K. x Nd 1-x NiO3 (0≤x≤1), preferably with rare earth nickel-based oxides Re mixed with Sm, Eu, Gd, Dy, and Ho at temperatures of 400K and above. x Re 1-x NiO3 (Re, Re' = Sm, Eu, Gd, Dy, Ho; 0 ≤ x ≤ 1); the rare earth nickel-based oxide can be chemically deposited into a thin film sample or sintered into a bulk sample and connected to a thermocouple.

[0026] Furthermore, the vanadium oxide compound can be modulated by doping with different transition metal elements to suit temperature and pressure sensing requirements in different temperature ranges. For temperatures from liquid nitrogen to 340 K, vanadium oxide compounds doped with transition metal elements W, Mo, Ti, Nb, Hf, Al, and Co are preferred. 1-x W x O2 (0≤X≤0.01), V 1-x Mo x O2 (0≤X≤0.1), V 1-x Ti x O2 (0≤X≤0.4), V 1-x Nb x O2 (0≤X≤0.1), V 1-x Hf x O2 (0≤X≤0.3), V 1-x Al x O2 (0≤X≤0.3), V 1-x Co x O2 (0≤X≤0.3). The vanadium oxide compound can be prepared as a thin film sample by physical deposition, or it can be sintered into a bulk sample and connected to a thermocouple.

[0027] The main working principle of this invention lies in using a temperature-pressure sensitive resistor as the connector for N-type and P-type thermocouples, and inserting it into the environment to be detected. First, the temperature T of the environment is measured, taking advantage of the thermocouple's characteristic that temperature measurement is unaffected by changes in ambient pressure. Then, a constant current is applied to the thermocouple and temperature-pressure sensitive resistor circuit, and the voltage V at the other end of the thermocouple is measured. The Seebeck voltage V generated by temperature is then subtracted from the directly measured voltage. S And the voltage drop V across the thermocouples at both ends TC Obtain the voltage drop V across the temperature and pressure sensitive resistor PT V PT =VV S -V TC V S The potential difference generated by the thermocouple during temperature measurement is approximately equal to that generated by the thermocouple during temperature measurement, V TC To measure the product of the current and the thermocouple resistance; based on the voltage drop V across the aforementioned temperature-pressure sensitive resistor. PT By calculating the resistance of the thermocouple and the applied constant current, and comparing this resistance with reference data from the resistance-pressure curve of the thermocouple at the corresponding temperature, environmental pressure can be measured. Through the design of the material composition of the thermocouple and thermocouple, the range of ambient temperature and pressure, as well as the sensitivity, can be further adjusted. The advantage of this technology lies in its ability to rapidly obtain environmental information such as temperature and pressure in high-pressure environments, making it valuable for applications in deep-sea and deep-earth exploration. Attached Figure Description

[0028] Figure 1 This is a schematic diagram of a thermocouple and environmental sensitive resistor combined temperature and pressure sensor. A temperature and pressure sensitive resistor material is connected in series between the two free ends of the thermocouple. The temperature of the temperature and pressure sensitive resistor material is measured through the thermoelectric effect of the thermocouple. The resistance value of the temperature and pressure sensitive resistor is measured by applying a constant current to measure the voltage or a constant voltage to measure the current. Furthermore, the pressure of the environment in which the material is located is obtained by solving the ternary function relationship of temperature-pressure-resistance of the environmental sensitive resistor.

[0029] Figure 2 The figure shows the temperature-resistance curves of Ag2S material under different environmental pressures. It can be seen that Ag2S material exhibits a good and stable thermistor effect within the temperature range of the insulating phase, and its functional relationship can be further adjusted by regulating the material composition to adapt to different temperature ranges.

[0030] Figure 3 The graphs show the pressure-resistance curves of Ag2S material at different ambient temperatures. It can be seen that Ag2S material exhibits a good and stable piezoresistive effect, and its functional relationship can be further adjusted by regulating the material composition to adapt to different environmental pressure ranges.

[0031] Figure 4 This is a temperature-pressure-resistance surface plot of Ag₂S material. It shows that at any point on the surface, the resistance corresponds to the ambient temperature and pressure, fully demonstrating the simultaneous thermistor and piezoresistive effects of Ag₂S. Furthermore, the plot marks several depths below sea level corresponding to the ambient pressure, as well as several landmarks, to aid the reader's understanding.

[0032] Figure 5 This is a temperature-resistance curve of Ag₂S material over a wide temperature range at ambient pressure. It can be seen that Ag₂S material exhibits a significant metal-insulator phase transition, and its phase transition temperature can be further adjusted by modifying the material composition to suit different temperature ranges. Detailed Implementation

[0033] Unless otherwise specified, all raw materials used in this invention are commercially available or prepared according to conventional methods in the art. Unless otherwise defined or stated, all technical and scientific terms used herein have the same meaning as commonly understood by one of skill in the art. Furthermore, any methods and materials similar to or equivalent to those described herein may be applied to the methods of this invention.

[0034] Other aspects of the invention will be apparent to those skilled in the art from the disclosure herein.

[0035] The present invention will be further illustrated below with reference to specific embodiments. It should be understood that these embodiments are for illustrative purposes only and are not intended to limit the scope of the invention. Experimental methods in the following embodiments that do not specify specific conditions are generally performed under conventional conditions.

[0036] Example 1:

[0037] The working ends of the platinum-platinum-rhodium thermocouple are contacted and mated using Ag2S bulk material, as follows: Figure 1 The schematic diagram shown illustrates the combination of constant current and voltage measurement to form a synergistic temperature and pressure sensor, which is then applied to the environment where temperature and pressure are to be measured. First, the temperature T of the environment is measured using the characteristic that thermocouple temperature measurement is unaffected by changes in ambient pressure. Then, a constant current is applied to the thermocouple and temperature / pressure sensitive resistor circuit, and the voltage V at the other end of the thermocouple is measured. The Seebeck voltage V generated by temperature is then subtracted from the directly measured voltage. S And the voltage drop V across the thermocouples at both ends TC Obtain the voltage drop V across the temperature and pressure sensitive resistor PT V PT =VV S -V TC V S The potential difference generated by the thermocouple during temperature measurement is approximately equal to that generated by the thermocouple during temperature measurement, V TC To measure the product of the current and the thermocouple resistance; based on the voltage drop V across the aforementioned temperature-pressure sensitive resistor. PT The resistance value of the temperature-pressure sensitive resistor is calculated based on the magnitude of the applied constant current; Figure 2 The temperature-resistivity curves of Ag2S bulk material under different environmental pressures are shown, and as follows: Figure 3 The pressure-resistance curves of Ag₂S bulk material at different ambient temperatures shown below can be obtained as follows: Figure 4 The surface showing the temperature-pressure-resistance ternary function relationship of Ag2S bulk material is shown. Given the ambient temperature and the resistance of Ag2S bulk material, the ambient pressure of Ag2S bulk material can be obtained from this ternary function relationship.

[0038] Example 2:

[0039] The working ends of the platinum-platinum-rhodium thermocouple are contacted and mated using Ag2S bulk material, as follows: Figure 1 The schematic diagram shown illustrates the combination of constant pressure and current measurement to form a synergistic temperature and pressure sensor, which is then applied to the environment where temperature and pressure are to be measured. First, the temperature T of the environment is measured using the characteristic that thermocouple temperature measurement is unaffected by changes in ambient pressure. Then, a constant voltage is applied to the thermocouple and temperature- and pressure-sensitive resistor circuit, and the current I is measured at the other end of the thermocouple. Finally, the Seebeck voltage V generated by temperature is subtracted from the applied constant voltage. S And the voltage drop V across the thermocouples at both ends TCObtain the voltage drop V across the temperature and pressure sensitive resistor PT V PT =VV S -V TC V S The potential difference generated by the thermocouple during temperature measurement is approximately equal to that generated by the thermocouple during temperature measurement, V TC The measured current is the product of the thermocouple resistance; based on the voltage drop V across the aforementioned temperature and pressure sensitive resistor. PT The resistance value of the temperature-pressure sensitive resistor is calculated based on the magnitude of the measured current; Figure 2 The temperature-resistivity curves of Ag2S bulk material under different environmental pressures are shown, and as follows: Figure 3 The pressure-resistance curves of Ag₂S bulk material at different ambient temperatures shown below can be obtained as follows: Figure 4 The surface showing the temperature-pressure-resistance ternary function relationship of Ag2S bulk material is shown. Given the ambient temperature and the resistance of Ag2S bulk material, the ambient pressure of Ag2S bulk material can be obtained from this ternary function relationship.

[0040] Example 3:

[0041] To increase the contact area between the Ag2S material and the thermocouple, thereby improving the accuracy of temperature sensing, the Ag2S bulk material was rolled into a strip and then directly cut into thin strips with scissors. These strips were then wound around the working end of the platinum-platinum-rhodium thermocouple, and subsequently... Figure 1 The schematic diagram shown illustrates the combination of components to form a synergistic temperature and pressure sensor, which is placed in the environment where temperature and pressure are to be measured. First, the ambient temperature T is measured using the thermocouple's characteristic that temperature measurement is unaffected by changes in ambient pressure. Then, a constant current is applied to the thermocouple and temperature- and pressure-sensitive resistor circuit, and the voltage V at the other end of the thermocouple is measured. The Seebeck voltage V generated by temperature is subtracted from the directly measured voltage. S And the voltage drop V across the thermocouples at both ends TC Obtain the voltage drop V across the temperature and pressure sensitive resistor PT V PT =VV S -V TC V S The potential difference generated by the thermocouple during temperature measurement is approximately equal to that generated by the thermocouple during temperature measurement, V TC To measure the product of the current and the thermocouple resistance; based on the voltage drop V across the aforementioned temperature-pressure sensitive resistor. PTThe resistance of the temperature-pressure sensitive resistor is calculated based on the magnitude of the applied constant current. Based on the temperature-resistance curves of rolled Ag2S material under different environmental pressures and the pressure-resistance curves of rolled Ag2S material under different environmental temperatures, a ternary function surface relating temperature, pressure, and resistance of rolled Ag2S material can be obtained. Given the environmental temperature and resistance of the rolled Ag2S material, the environmental pressure can be calculated from this ternary function relationship.

[0042] Example 4:

[0043] The Ag2S material and the thermocouple were connected by welding, and then... Figure 1 The schematic diagram shown illustrates the combination of components to form a synergistic temperature and pressure sensor, which is placed in the environment where temperature and pressure are to be measured. First, the ambient temperature T is measured using the thermocouple's characteristic that temperature measurement is unaffected by changes in ambient pressure. Then, a constant current is applied to the thermocouple and temperature- and pressure-sensitive resistor circuit, and the voltage V at the other end of the thermocouple is measured. The Seebeck voltage V generated by temperature is subtracted from the directly measured voltage. S And the voltage drop V across the thermocouples at both ends TC Obtain the voltage drop V across the temperature and pressure sensitive resistor PT V PT =VV S -V TC V S The potential difference generated by the thermocouple during temperature measurement is approximately equal to that generated by the thermocouple during temperature measurement, V TC To measure the product of the current and the thermocouple resistance; based on the voltage drop V across the aforementioned temperature-pressure sensitive resistor. PT The resistance of the temperature-pressure sensitive resistor is calculated based on the magnitude of the applied constant current. Based on the temperature-resistance curves of rolled Ag2S material under different environmental pressures and the pressure-resistance curves of rolled Ag2S material under different environmental temperatures, a ternary function surface relating temperature, pressure, and resistance of rolled Ag2S material can be obtained. Given the environmental temperature and resistance of the rolled Ag2S material, the environmental pressure can be calculated from this ternary function relationship.

[0044] Example 5:

[0045] Two wires were led out from the surface of the Ag2S block using silver paste and Pt wire. The Pt wires were then connected to the thermocouple by welding. Then, the process was carried out as follows... Figure 1The schematic diagram shown illustrates the combination of components to form a synergistic temperature and pressure sensor, which is placed in the environment where temperature and pressure are to be measured. First, the ambient temperature T is measured using the thermocouple's characteristic that temperature measurement is unaffected by changes in ambient pressure. Then, a constant current is applied to the thermocouple and temperature- and pressure-sensitive resistor circuit, and the voltage V at the other end of the thermocouple is measured. The Seebeck voltage V generated by temperature is subtracted from the directly measured voltage. S And the voltage drop V across the thermocouples at both ends TC Obtain the voltage drop V across the temperature and pressure sensitive resistor PT V PT =VV S -V TC V S The potential difference generated by the thermocouple during temperature measurement is approximately equal to that generated by the thermocouple during temperature measurement, V TC To measure the product of the current and the thermocouple resistance; based on the voltage drop V across the aforementioned temperature-pressure sensitive resistor. PT The resistance of the temperature-pressure sensitive resistor is calculated based on the magnitude of the applied constant current. Based on the temperature-resistance curves of rolled Ag2S material under different environmental pressures and the pressure-resistance curves of rolled Ag2S material under different environmental temperatures, a ternary function surface relating temperature, pressure, and resistance of rolled Ag2S material can be obtained. Given the environmental temperature and resistance of the rolled Ag2S material, the environmental pressure can be calculated from this ternary function relationship.

[0046] Example 6:

[0047] Two Pt electrodes were plated on the surface of the Ag2S block, and the Pt electrodes were connected to the thermocouple by compression bonding. Then, the following steps were performed... Figure 1 The schematic diagram shown illustrates the combination of components to form a synergistic temperature and pressure sensor, which is placed in the environment where temperature and pressure are to be measured. First, the ambient temperature T is measured using the thermocouple's characteristic that temperature measurement is unaffected by changes in ambient pressure. Then, a constant current is applied to the thermocouple and temperature- and pressure-sensitive resistor circuit, and the voltage V at the other end of the thermocouple is measured. The Seebeck voltage V generated by temperature is subtracted from the directly measured voltage. S And the voltage drop V across the thermocouples at both ends TC Obtain the voltage drop V across the temperature and pressure sensitive resistor PT V PT =VV S -V TC V S The potential difference generated by the thermocouple during temperature measurement is approximately equal to that generated by the thermocouple during temperature measurement, V TC To measure the product of the current and the thermocouple resistance; based on the voltage drop V across the aforementioned temperature-pressure sensitive resistor. PTThe resistance of the temperature-pressure sensitive resistor is calculated based on the magnitude of the applied constant current. Based on the temperature-resistance curves of rolled Ag2S material under different environmental pressures and the pressure-resistance curves of rolled Ag2S material under different environmental temperatures, a ternary function surface relating temperature, pressure, and resistance of rolled Ag2S material can be obtained. Given the environmental temperature and resistance of the rolled Ag2S material, the environmental pressure can be calculated from this ternary function relationship.

[0048] Implementation 7:

[0049] To meet the testing requirements of deep-earth wide-temperature environments, Ag2S bulk material with stable resistance and pressure relationships across a wide temperature range was used for docking with a copper-copper-nickel alloy thermocouple suitable for a wide temperature range of -250-350℃, as follows: Figure 1 The schematic diagram shown forms a synergistic temperature and pressure sensor. After encapsulating the AgS material and the copper-copper-nickel alloy thermocouple with inert epoxy resin, it can be used for temperature and pressure sensing under deep-earth wide-temperature conditions. The resistivity-temperature curve of the Ag2S material in the wide temperature range of -170-230℃ is shown below. Figure 5 As shown; firstly, the ambient temperature T is measured by utilizing the characteristic that thermocouple temperature measurement is unaffected by changes in ambient pressure. Then, a constant current is applied to the thermocouple and temperature-pressure sensitive resistor circuit, and the voltage V at the other end of the thermocouple is measured. The Seebeck voltage V generated by temperature is then subtracted from the directly measured voltage. S And the voltage drop V across the thermocouples at both ends TC Obtain the voltage drop V across the temperature and pressure sensitive resistor PT V PT =VV S -V TC V S The potential difference generated by the thermocouple during temperature measurement is approximately equal to that generated by the thermocouple during temperature measurement, V TC To measure the product of the current and the thermocouple resistance; based on the voltage drop V across the aforementioned temperature-pressure sensitive resistor. PT The resistance of the temperature-pressure sensitive resistor is calculated based on the magnitude of the applied constant current. Based on the temperature-resistance curves of Ag2S bulk material under different environmental pressures and the pressure-resistance curves of Ag2S bulk material under different environmental temperatures, a ternary function surface relating temperature, pressure, and resistance of Ag2S bulk material can be obtained. Given the environmental temperature and resistance of the Ag2S bulk material, the environmental pressure can be calculated from this ternary function relationship.

[0050] Example 8:

[0051] The working ends of the platinum-platinum-rhodium thermocouple are contacted and mated using a bulk rare-earth nickel-based oxide (SmNiO3) material, as follows: Figure 1The schematic diagram shown illustrates the combination of constant current and voltage measurement to form a synergistic temperature and pressure sensor, which is then applied to the environment where temperature and pressure are to be measured. First, the temperature T of the environment is measured using the characteristic that thermocouple temperature measurement is unaffected by changes in ambient pressure. Then, a constant current is applied to the thermocouple and temperature / pressure sensitive resistor circuit, and the voltage V at the other end of the thermocouple is measured. The Seebeck voltage V generated by temperature is then subtracted from the directly measured voltage. S And the voltage drop V across the thermocouples at both ends TC Obtain the voltage drop V across the temperature and pressure sensitive resistor PT V PT =VV S -V TC V S The potential difference generated by the thermocouple during temperature measurement is approximately equal to that generated by the thermocouple during temperature measurement, V TC To measure the product of the current and the thermocouple resistance; based on the voltage drop V across the aforementioned temperature-pressure sensitive resistor. PT The resistance of the temperature-pressure sensitive resistor is calculated based on the magnitude of the applied constant current. Based on the temperature-resistance curves of SmNiO3 bulk material under different environmental pressures and the pressure-resistance curves of SmNiO3 bulk material under different environmental temperatures, a ternary function surface relating temperature, pressure, and resistance of SmNiO3 bulk material can be obtained. Given the environmental temperature and resistance of the SmNiO3 bulk material, the environmental pressure can be calculated from this ternary function relationship.

[0052] Example 9:

[0053] A Pt electrode is deposited on the surface of a rare-earth nickel-based oxide SmNiO3 thin film. The Pt electrode is then connected to a thermocouple via a press-fit method, as follows: Figure 1 The schematic diagram shown illustrates the combination of constant current and voltage measurement to form a synergistic temperature and pressure sensor, which is then applied to the environment where temperature and pressure are to be measured. First, the temperature T of the environment is measured using the characteristic that thermocouple temperature measurement is unaffected by changes in ambient pressure. Then, a constant current is applied to the thermocouple and temperature / pressure sensitive resistor circuit, and the voltage V at the other end of the thermocouple is measured. The Seebeck voltage V generated by temperature is then subtracted from the directly measured voltage. S And the voltage drop V across the thermocouples at both ends TC Obtain the voltage drop V across the temperature and pressure sensitive resistor PT V PT =VV S -V TC V S The potential difference generated by the thermocouple during temperature measurement is approximately equal to that generated by the thermocouple during temperature measurement, V TC To measure the product of the current and the thermocouple resistance; based on the voltage drop V across the aforementioned temperature-pressure sensitive resistor. PTThe resistance of the temperature-pressure sensitive resistor is calculated based on the magnitude of the applied constant current. Based on the temperature-resistance curves of the SmNiO3 thin film material under different environmental pressures and the pressure-resistance curves of the SmNiO3 thin film material under different environmental temperatures, a ternary function surface relating temperature, pressure, and resistance of the SmNiO3 thin film material can be obtained. Given the environmental temperature and resistance of the SmNiO3 thin film material, the environmental pressure can be calculated from this ternary function relationship.

[0054] Example 10:

[0055] To meet the testing requirements of polar low-temperature environments, Sm is used, which has a stable resistance temperature and resistance-voltage relationship at low temperatures. 0.25 Nd 0.75 The NiO3 bulk material is mated with a copper-copper-nickel alloy thermocouple suitable for a wide temperature range of -250-350℃, according to the following... Figure 1 The schematic diagram shown is combined to form a synergistic temperature and pressure sensor, and Sm 0.25 Nd 0.75 NiO3 material and copper-copper-nickel alloy thermocouples, encapsulated in inert epoxy resin, can be used for temperature and pressure sensing under deep-earth, wide-temperature-range conditions. First, the ambient temperature T is measured, utilizing the thermocouple's characteristic that temperature measurement is unaffected by changes in ambient pressure. Then, a constant current is applied to the thermocouple and temperature-pressure-sensitive resistor circuit, and the voltage V at the other end of the thermocouple is measured. The Seebeck voltage V generated by temperature is then subtracted from the directly measured voltage. S And the voltage drop V across the thermocouples at both ends TC Obtain the voltage drop V across the temperature and pressure sensitive resistor PT V PT =VV S -V TC V S The potential difference generated by the thermocouple during temperature measurement is approximately equal to that generated by the thermocouple during temperature measurement, V TC To measure the product of the current and the thermocouple resistance; based on the voltage drop V across the aforementioned temperature-pressure sensitive resistor. PT The resistance of the temperature-pressure sensitive resistor was calculated based on the magnitude of the applied constant current; and the temperature-resistance relationship curves of Ag2S bulk material under different environmental pressures, and Sm 0.25 Nd 0.75 The pressure-resistance curves of NiO3 bulk material at different ambient temperatures yield Sm 0.25 Nd 0.75 The temperature-pressure-resistance ternary function surface of NiO3 bulk material, given Sm 0.25 Nd 0.75 Given the ambient temperature and resistivity of the NiO3 bulk material, Sm can be obtained from this ternary function relationship. 0.25 Nd0.75 Environmental pressure of NiO3 bulk materials.

[0056] Example 11:

[0057] To meet the testing requirements near the freezing point of the deep sea and under high pressure, rare earth nickel-based oxides Sm, which are suitable for low-temperature environments and resistant to seawater corrosion, were used. 0.75 Nd 0.25 The NiO3 bulk material is mated with an iron-copper-nickel thermocouple suitable for a temperature range of -40 to 750°C, according to... Figure 1 The schematic diagram shown is combined to form a synergistic temperature and pressure sensor, and Sm 0.75 Nd 0.25 NiO3 material and iron-copper-nickel alloy thermocouples, encapsulated in inert epoxy resin, can be used for temperature and pressure sensing in deep-sea environments for submersibles. First, the ambient temperature T is measured, utilizing the thermocouple's characteristic that temperature measurement is unaffected by changes in ambient pressure. Then, a constant current is applied to the thermocouple and temperature- and pressure-sensitive resistor circuit, and the voltage V at the other end of the thermocouple is measured. The Seebeck voltage V generated by temperature is subtracted from the directly measured voltage. S And the voltage drop V across the thermocouples at both ends TC Obtain the voltage drop V across the temperature and pressure sensitive resistor PT V PT =VV S -V TC V S The potential difference generated by the thermocouple during temperature measurement is approximately equal to that generated by the thermocouple during temperature measurement, V TC To measure the product of the current and the thermocouple resistance; based on the voltage drop V across the aforementioned temperature-pressure sensitive resistor. PT The resistance of the temperature-pressure sensitive resistor is calculated based on the magnitude of the applied constant current; (Based on Sm) 0.75 Nd 0.25 Temperature-resistivity curves of NiO3 bulk materials under different environmental pressures, and Sm 0.75 Nd 0.25 The pressure-resistance curves of NiO3 bulk material at different ambient temperatures can be used to obtain Sm 0.75 Nd 0.25 The temperature-pressure-resistance ternary function surface of NiO3 bulk material, given Sm 0.75 Nd 0.25 Given the ambient temperature and resistivity of the NiO3 bulk material, Sm can be obtained from this ternary function relationship. 0.75 Nd 0.25 Environmental pressure of NiO3 bulk materials.

[0058] Example 12:

[0059] The working ends of the platinum-platinum-rhodium thermocouple are contacted and mated using a rare-earth nickel-based oxide VO2 bulk material, as follows: Figure 1 The schematic diagram shown illustrates the combination of constant current and voltage measurement to form a synergistic temperature and pressure sensor, which is then applied to the environment where temperature and pressure are to be measured. First, the temperature T of the environment is measured using the characteristic that thermocouple temperature measurement is unaffected by changes in ambient pressure. Then, a constant current is applied to the thermocouple and temperature / pressure sensitive resistor circuit, and the voltage V at the other end of the thermocouple is measured. The Seebeck voltage V generated by temperature is then subtracted from the directly measured voltage. S And the voltage drop V across the thermocouples at both ends TC Obtain the voltage drop V across the temperature and pressure sensitive resistor PT V PT =VV S -V TC V S The potential difference generated by the thermocouple during temperature measurement is approximately equal to that generated by the thermocouple during temperature measurement, V TC To measure the product of the current and the thermocouple resistance; based on the voltage drop V across the aforementioned temperature-pressure sensitive resistor. PT The resistance value of the temperature-pressure sensitive resistor is calculated based on the magnitude of the applied constant current; Figure 2 The temperature-resistivity curves of the VO2 bulk material under different environmental pressures are shown, and as follows: Figure 3 The pressure-resistance curves of the VO2 bulk material at different ambient temperatures shown can be obtained as follows: Figure 4 The temperature-pressure-resistance ternary function surface of the VO2 bulk material is shown. Given the ambient temperature and the resistance of the VO2 bulk material, the ambient pressure of the VO2 bulk material can be obtained from this ternary function relationship.

[0060] Example 13:

[0061] A Pt electrode is deposited on the surface of a vanadium oxide (VO2) thin film. The Pt electrode is then connected to a thermocouple via a press-fit method, as follows: Figure 1 The schematic diagram shown illustrates the combination of constant current and voltage measurement to form a synergistic temperature and pressure sensor, which is then applied to the environment where temperature and pressure are to be measured. First, the temperature T of the environment is measured using the characteristic that thermocouple temperature measurement is unaffected by changes in ambient pressure. Then, a constant current is applied to the thermocouple and temperature / pressure sensitive resistor circuit, and the voltage V at the other end of the thermocouple is measured. The Seebeck voltage V generated by temperature is then subtracted from the directly measured voltage. S And the voltage drop V across the thermocouples at both ends TC Obtain the voltage drop V across the temperature and pressure sensitive resistor PT V PT =VV S -V TC V S The potential difference generated by the thermocouple during temperature measurement is approximately equal to that generated by the thermocouple during temperature measurement, VTC To measure the product of the current and the thermocouple resistance; based on the voltage drop V across the aforementioned temperature-pressure sensitive resistor. PT The resistance of the temperature-pressure sensitive resistor is calculated based on the magnitude of the applied constant current. Based on the temperature-resistance curves of VO2 thin film material under different environmental pressures and the pressure-resistance curves of VO2 thin film material under different environmental temperatures, the ternary function relationship surface of temperature-pressure-resistance of VO2 thin film material can be obtained. Under the condition that the environmental temperature of VO2 thin film material and its own resistance are known, the environmental pressure of VO2 thin film material can be obtained from this ternary function relationship.

Claims

1. A temperature and pressure sensor that combines a thermocouple and a temperature and pressure sensitive resistor, characterized in that, In the temperature and pressure sensor, a temperature and pressure sensitive resistor is connected to one end of both a P-type thermocouple and an N-type thermocouple, serving as the connector between them, and is inserted into the environment to be detected. The other ends of both the P-type and N-type thermocouples are used to measure electrical signals. First, the ambient temperature T is measured using the characteristic that thermocouple temperature measurement is unaffected by changes in ambient pressure. Then, a constant current is applied to the thermocouple and temperature and pressure sensitive resistor circuit, and the voltage V is measured at the other end of the thermocouple. The Seebeck voltage V generated by temperature is subtracted from the directly measured voltage. S And the voltage drop V across the thermocouples at both ends TC Obtain the voltage drop V across the temperature and pressure sensitive resistor PT V PT =VV S -V TC V S V is equal to the thermoelectric potential generated by the thermocouple when measuring temperature. TC The constant current applied is multiplied by the resistance of the thermocouple; based on the voltage drop V across the aforementioned temperature-pressure sensitive resistor. PT The resistance value of the temperature-pressure sensitive resistor is calculated based on the magnitude of the applied constant current, and this resistance value is compared with the reference data of the resistance-pressure curve of the temperature-pressure sensitive resistor at the corresponding temperature to achieve the measurement of environmental pressure.

2. The temperature and pressure sensor based on a combined thermocouple and a temperature and pressure sensitive resistor according to claim 1, characterized in that, The structural feature of the temperature and pressure sensor of the synergistic thermocouple and temperature and pressure sensitive resistor is that the temperature and pressure sensitive resistor is used to connect one end of the P-type thermocouple and the N-type thermocouple, and the temperature difference potential and the overall resistance are measured at the other end of the P-type thermocouple and the N-type thermocouple; the thermocouple and the temperature and pressure sensitive resistor are selected from one of the following: contact connection, press connection, co-sintering connection, or connection through leads or electrodes.

3. The temperature and pressure sensor based on the synergistic thermocouple and temperature-pressure sensitive resistor according to claim 1, characterized in that, The resistance of the temperature-pressure sensitive resistor can also be measured by applying a constant voltage V and measuring the current I of the entire circuit. First, the ambient temperature T is measured using the characteristic that thermocouple temperature measurement is unaffected by changes in ambient pressure. Then, a constant voltage is applied to the thermocouple and temperature-pressure sensitive resistor circuit, and the current I is measured at the other end of the thermocouple. The applied constant voltage is then subtracted from the Seebeck voltage V generated by the temperature. S And the voltage drop V across the thermocouples at both ends TC Obtain the voltage drop V across the temperature and pressure sensitive resistor PT V PT =VV S -V TC V S V is equal to the thermoelectric potential generated by the thermocouple when measuring temperature. TC The measured current is the product of the thermocouple resistance; based on the voltage drop V across the aforementioned temperature and pressure sensitive resistor. PT The resistance value of the thermo-pressure sensitive resistor is calculated based on the magnitude of the measured current. This resistance value is then compared with the reference data of the resistance-pressure curve of the thermo-pressure sensitive resistor at the corresponding temperature to achieve the measurement of ambient pressure. The difference between this measurement method and the method of applying constant current to measure the total voltage of the circuit is that, in addition to the voltmeter used to measure the thermoelectric potential, an ammeter for measuring the current of the entire circuit is also required at the other end of the thermocouple. The final measurement results are the same for both methods.

4. The temperature and pressure sensor based on the synergistic thermocouple and temperature-pressure sensitive resistor according to claim 1, characterized in that, The thermocouple is a temperature-sensitive material exhibiting the Seebeck effect, composed of two different metals or alloys. The temperature difference between its working and free ends is converted into a potential difference through the thermoelectric effect. Furthermore, the thermocouple is insensitive to environmental pressure, and its resistance-temperature relationship remains essentially unchanged under different environmental pressures. Moreover, since the magnitude of the thermoelectric potential depends only on the temperature difference between the working and free ends of the thermocouple, connecting or splicing other materials between the working ends of the thermocouple does not affect the magnitude of the generated thermoelectric potential. Types include platinum-platinum-rhodium 10 thermocouples, platinum-rhodium 30-platinum-rhodium 6 thermocouples, nickel-chromium-silicon-nickel-silicon thermocouples, copper-copper-nickel thermocouples, and copper-nickel thermocouples. -Iron thermocouples, nickel-chromium-copper-nickel thermocouples, and nickel-chromium-nickel-aluminum thermocouples; the temperature measurement range and accuracy can be controlled by selecting thermocouple materials and designing dimensions. Platinum-platinum-rhodium 10 thermocouples are selected in the range of 600-1300℃; nickel-chromium-silicon-nickel-silicon thermocouples are selected above 1200℃; platinum-rhodium 30-platinum-rhodium 6 thermocouples are selected above 1300℃; magnetic nickel-chromium-nickel-aluminum thermocouples or non-magnetic nickel-chromium-copper-nickel thermocouples are selected in the range of -200-1200℃; copper-nickel-iron thermocouples are selected in the range of -40-750℃; and copper-copper-nickel thermocouples are selected in the range of -250-350℃.

5. The temperature and pressure sensor with a synergistic thermocouple and a temperature and pressure sensitive resistor according to claim 1, characterized in that, The resistivity of the temperature-pressure sensitive resistor material is sensitive to both ambient temperature and ambient pressure, exhibiting both thermistor and piezoresistive effects. Changes in ambient temperature and pressure alter the electronic and crystal structures of the material, thereby changing its resistance and forming a ternary function relationship of temperature-pressure-resistance. Given any two of these quantities, the third quantity can be determined using this functional relationship. The temperature-resistance-pressure relationship of the temperature-pressure sensitive resistor material is reversible, maintaining its original ternary function relationship essentially unchanged even after multiple temperature or pressure cycles. The temperature and pressure sensitive resistor material still has a stable crystal structure under extreme environments; the temperature and pressure sensitive resistor material includes silver sulfide, doped silver sulfide, rare earth nickel-based oxide, and vanadium oxide; by selecting the temperature and pressure sensitive resistor material and designing its shape and size, the measurement pressure range and accuracy can be controlled.

6. The temperature and pressure sensor of the synergistic thermocouple and temperature and pressure sensitive resistor according to claim 5, characterized in that, The silver sulfide and doped silver sulfide can be modulated by replacing different group silver or chalcogen elements to suit temperature and pressure sensing requirements in different temperature ranges. For the range from room temperature to 720K, selenium-doped silver sulfide (Ag₂S) is selected. 1-x Se x Where 0 ≤ x ≤ 0.1; nickel-doped silver sulfide Ag 2-x Ni x S, where 0 ≤ x ≤ 0.2; mercury-doped silver sulfide Ag 2-x Hg x S, where 0 ≤ x ≤ 0.4; tellurium-doped silver sulfide Ag₂S₂ is selected from room temperature to 620 K. 1-x Te x Where 0 ≤ x ≤ 0.2; selenium-doped silver sulfide Ag₂S 1-x Se x Where 0.3≤x≤0.5; copper-doped silver sulfide Ag 2-x Cu x S, where 0≤x≤0.2; the silver sulfide and doped silver sulfide can be pressed into bulk samples from powder, or rolled into flexible strip or bar samples to be connected to thermocouples.

7. The temperature and pressure sensor of the combined thermocouple and temperature and pressure sensitive resistor according to claim 5, characterized in that, The rare-earth nickel-based oxide can be modulated by doping different A-site lanthanide elements or B-site transition metal elements to meet the temperature and pressure sensing requirements in different temperature ranges. For example, a rare-earth nickel-based oxide with La and Pr doping at the A-site can be selected from liquid nitrogen temperature to room temperature. x Pr 1-x NiO3, where 0≤x≤1; A-site La, Nd mixed rare earth nickel-based oxide La x Nd 1-x NiO3, where 0≤x≤1; A-site Pr, Nd mixed rare earth nickel-based oxide Pr x Nd 1-x NiO3, where 0 ≤ x ≤ 1; or rare earth nickel-based oxides NdFe₂ doped with Co, Cu, Zn, Fe, or Mn at the B site. x Ni 1-x O3, where 0 ≤ x ≤ 0.2; NdCo x Ni 1-x O3, where 0 ≤ x ≤ 0.2; NdZn x Ni 1- x O3, where 0 ≤ x ≤ 0.3; NdCu x Ni 1-x O3, where 0 ≤ x ≤ 0.1; at liquid nitrogen temperature up to 400 K, select A-site Sm, Nd mixed rare earth nickel-based oxide Sm x Nd 1-x NiO3, where 0≤x≤1; rare earth nickel-based oxides Re, a mixture of Sm, Eu, Gd, Dy, and Ho, are selected at temperatures of 400K and above. x Re 1-x 'NiO3, where Re, Re' = Sm, Eu, Gd, Dy, Ho; 0 ≤ x ≤ 1; the rare earth nickel-based oxide can be chemically deposited into a thin film sample or sintered into a bulk sample and connected to a thermocouple.

8. The temperature and pressure sensor of the synergistic thermocouple and temperature and pressure sensitive resistor according to claim 5, characterized in that, The vanadium oxide compound can be modulated by doping with different transition metal elements to meet the temperature and pressure sensing requirements in different temperature ranges. For example, vanadium oxide compounds V doped with transition metal elements W, Mo, Ti, Nb, Hf, Al, and Co can be selected from liquid nitrogen temperatures up to 340 K. 1-x W x O2, where 0 ≤ X ≤ 0.01; V 1-x Mo x O2, where 0 ≤ X ≤ 0.1; V 1-x Ti x O2, where 0 ≤ X ≤ 0.4; V 1- x Nb x O2, where 0 ≤ X ≤ 0.1; V 1-x Hf x O2, where 0 ≤ X ≤ 0.3; V 1-x Al x O2, where 0 ≤ X ≤ 0.3; V 1-x Co x O2, where 0≤X≤0.3; the vanadium oxide compound can be prepared as a thin film sample by physical deposition, or sintered into a bulk sample and connected to a thermocouple.

Citation Information

Patent Citations

  • Electric element

    CN103229032A

  • Array type temperature and pressure cooperative sensor and application method

    CN113340356A