A wafer handling device and wafer thinning apparatus for warping wafers

Abstract

The application discloses a kind of warping wafer handling device and wafer thinning equipment, the handling device includes fixed seat, swing arm and loading head, the loading head is set to the end of swing arm and swing around fixed seat;The loading head includes: support disc, set to the lower of swing arm;Suction assembly, set to the middle of support disc, for vacuum adsorption warped wafer;Limit ring, set to the outer edge of support disc, at least part is pressed on wafer edge;When loading head and suction disc workbench interact wafer, the edge space formed by wafer warping part, limit ring and suction disc workbench is vacuumized, under the action of pressure difference on wafer upper and lower surface, warped wafer is adhered to suction disc workbench.

Description

Technical Field

[0001] This invention belongs to the field of wafer thinning technology, and more specifically, relates to a handling device for warped wafers and wafer thinning equipment. Background Technology

[0002] The integrated circuit industry is the core of the information technology industry, playing a crucial role in promoting the digital and intelligent transformation and upgrading of the manufacturing industry. In the back-end process of integrated circuit manufacturing, in order to reduce the packaging height, reduce the chip package size, improve the chip's thermal diffusion efficiency, electrical performance, mechanical performance, and reduce the amount of chip processing, the wafer needs to undergo wafer thinning before subsequent packaging. The thickness of the thinned chip can even be less than 5% of the initial thickness.

[0003] Wafer thinning is performed on wafer thinning equipment, and the wafer handling device is one of the key components of the wafer thinning equipment. The stability and accuracy of wafer transport are directly related to the production efficiency of the equipment.

[0004] Due to material inhomogeneity and the effects of thermal stress, wafers may warp. Therefore, during the wafer thinning process, it is unavoidable to handle and process the warped wafers.

[0005] When a wafer exhibits significant warpage, the following problems arise: due to the wafer warping upwards or downwards, the warped portion cannot adhere to the flat chuck stage, resulting in unreliable wafer adhesion. Specifically, during wafer thinning, vacuum leakage occurs at the warped portion, causing the wafer to shift on the chuck stage, which severely impacts wafer processing quality. Summary of the Invention

[0006] This invention provides a handling device for warped wafers and a wafer thinning equipment, aiming to solve at least one of the technical problems existing in the prior art.

[0007] A first aspect of the present invention provides a transport device for warped wafers, comprising a fixed base, a swing arm, and a loading head, wherein the loading head is disposed at the end of the swing arm and swings around the fixed base; the loading head includes:

[0008] The support plate is located below the swing arm;

[0009] An adsorption assembly, located in the center of a support disk, is used for vacuum adsorption of warped wafers.

[0010] A limiting ring is disposed on the outer edge of the support disk, and at least part of it presses against the edge of the wafer;

[0011] When the loading head interacts with the chuck stage, a vacuum is drawn in the edge space formed by the warped part of the wafer, the limiting ring, and the chuck stage. Under the pressure difference between the upper and lower surfaces of the wafer, the warped wafer adheres to the chuck stage.

[0012] In some embodiments, the limiting ring is configured with a limiting stage, the bottom surface of which is a plane to press against the edge of the warped wafer.

[0013] In some embodiments, the limiting ring further includes an inclined portion disposed on the outside of the limiting platform; the inclined portion is configured with an inclined surface facing outward and downward.

[0014] In some embodiments, the limiting ring is provided with a fluid hole inside, one port of which is located on the inclined surface and the other port is connected to an external fluid source.

[0015] In some embodiments, the number of fluid holes is multiple, and they are uniformly arranged along the circumference of the limiting ring.

[0016] In some embodiments, the limiting ring is made of wear-resistant plastic and has a flat bottom surface.

[0017] In some embodiments, the support plate is provided with at least one through hole, and the through hole is located inside the limiting ring.

[0018] In some embodiments, the adsorption assembly includes an adsorption disk and a guide rod, the adsorption disk being disposed at the lower end of the guide rod and capable of moving vertically.

[0019] In some embodiments, the adsorption assembly further includes an elastic element that is sleeved on the outer periphery of the guide rod and presses against the adsorption disk and the support disk.

[0020] A second aspect of the present invention provides a wafer loading method using the aforementioned transport apparatus, comprising:

[0021] S1, the swing arm drives the loading head to swing around the fixed base to above the wafer to be loaded, the loading head moves down, and the adsorption assembly loads the wafer;

[0022] S2, the loading head loaded with the wafer moves up and moves with the swing arm to above the chuck stage, and the loading head moves down to place the wafer on the chuck stage;

[0023] S3, the fluid hole of the limiting ring sprays liquid toward the edge space, evacuating the porous ceramic of the suction cup stage, so that the edge space forms a negative pressure; under the action of the pressure difference between the upper and lower surfaces of the wafer, the warped wafer adheres to the suction cup stage.

[0024] A third aspect of the present invention provides a wafer thinning apparatus, which includes a thinning unit and the aforementioned transport device, wherein the transport device is disposed adjacent to a suction cup stage of the thinning unit to realize wafer transport.

[0025] The beneficial effects of this invention include:

[0026] a. The loading head of the conveying device is equipped with a limit ring, which at least partially presses against the edge of the warped wafer to limit the loading of the wafer;

[0027] b. The warped portion of the wafer, the limiting ring, and the chuck stage can form an edge space. When the loading head interacts with the chuck stage, the edge space is evacuated, which creates a pressure difference between the upper and lower surfaces of the wafer, thereby promoting the warped wafer to fit tightly against the surface of the chuck stage.

[0028] c. The limiting ring is equipped with a fluid hole that communicates with the edge space so that liquid can be sprayed toward the edge space when the wafer is loaded. Under the action of liquid film tension, the warped part of the wafer W is made to fit tightly against the surface of the chuck stage.

[0029] d. The loading head is equipped with an adsorption component in the middle, which is relatively small in size and can adsorb the center position of the wafer; furthermore, the adsorption component is equipped with an elastic element to improve the flexibility of the loading head and prevent the loaded wafer from making hard contact with the chuck stage, which would cause the wafer to break. Attached Figure Description

[0030] The advantages of the present invention will become clearer and easier to understand through the following detailed description in conjunction with the accompanying drawings, which are merely illustrative and do not limit the scope of protection of the present invention, wherein:

[0031] Figure 1 This is a schematic diagram of a handling device for warped wafers provided in an embodiment of the present invention;

[0032] Figure 2 This is a schematic diagram of a loading head provided in an embodiment of the present invention;

[0033] Figure 3 yes Figure 2 A partial schematic diagram at point A in the middle;

[0034] Figure 4 This is a bottom view of a limiting ring provided in an embodiment of the present invention;

[0035] Figure 5 yes Figure 2 A magnified view of a section at point B in the middle;

[0036] Figure 6 This is a schematic diagram of the interaction between the transport device and the suction cup worktable according to an embodiment of the present invention;

[0037] Figure 7 yes Figure 6 A magnified view of a section at point C;

[0038] Figure 8 This is a flowchart of a wafer loading method provided in an embodiment of the present invention;

[0039] Figure 9 This is a schematic diagram of a wafer thinning apparatus provided in an embodiment of the present invention. Detailed Implementation

[0040] The technical solutions of the present invention will be described in detail below with reference to specific embodiments and accompanying drawings. The embodiments described herein are specific implementations of the present invention, used to illustrate the concept of the present invention; these descriptions are explanatory and exemplary, and should not be construed as limiting the implementation methods or the scope of protection of the present invention. In addition to the embodiments described herein, those skilled in the art can employ other obvious technical solutions based on the content disclosed in the claims and specification of this application. These technical solutions include those that make any obvious substitutions and modifications to the embodiments described herein.

[0041] The accompanying drawings in this specification are schematic diagrams used to illustrate the concept of the invention and to schematically show the shapes of the various parts and their interrelationships. It should be understood that, in order to clearly show the structure of the various components of the embodiments of the invention, the drawings are not drawn to the same scale, and the same reference numerals are used to indicate the same parts in the drawings.

[0042] In this invention, a wafer (W) is also called a substrate, and thinning is also called grinding, which refers to the thinning process of a wafer; their meanings and practical functions are equivalent. The term "comprising" and similar terms should be understood as open-ended inclusion, i.e., "including but not limited to." The term "based on" should be understood as "at least partially based on." The term "one embodiment" or "this embodiment" should be understood as "at least one embodiment." The terms "first," "second," etc., may refer to different or the same objects and are used only to distinguish the objects referred to, without implying a specific spatial order, temporal order, order of importance, etc., of the objects referred to. In some embodiments, values, processes, selected items, determined items, devices, apparatuses, means, parts, components, etc., are referred to as "best," "lowest," "highest," "minimum," "maximum," etc. It should be understood that such descriptions are intended to indicate that selection can be made from a number of available functional options, and that such selection is not necessarily better, lower, higher, smaller, larger, or otherwise preferred than other options in any other respect or in all respects.

[0043] Figure 1This is a schematic diagram of a warped wafer transport device 100 according to an embodiment of the present invention. The transport device 100 includes a fixed base 110, a swing arm 120, and a loading head 130. The loading head 130 is disposed at the end of the swing arm 120 and is used to hold the wafer. The loading head 130 can swing around the center line of the fixed base 110, while the swing arm 120 can move along the central axis of the fixed base 110 to change the position of the loading head 130 and the wafer it holds, thereby realizing the transfer of the wafer.

[0044] Further, a schematic diagram of the loading head 130 is shown below. Figure 2 As shown, the loading head 130 includes:

[0045] A support disk 10 is disposed below the swing arm 120; specifically, the support disk 10 has a disk-shaped structure and its size matches the outer diameter of the wafer to be loaded; the support disk 10 is detachably connected to the end of the swing arm 120 for easy disassembly and maintenance.

[0046] The adsorption component 20 is located in the middle of the support disk 10 and is used for vacuum adsorption of warped wafers.

[0047] The limiting ring 30 is located on the outer edge of the support plate 10; when the wafer is loaded onto the chuck stage 200 ( Figure 7 During the process (as shown), the limiting ring 30 at least partially presses against the edge of the wafer to limit the wafer and ensure that the wafer is concentric with the chuck stage 200.

[0048] Specifically, driven by the swing arm 120, the loading head 130, which holds the warped wafer, moves above the chuck stage 200; then, the loading head 130 presses the wafer against the surface of the chuck stage 200; subsequently, the edge space S formed by the warped portion of the wafer, the limiting ring 30, and the chuck stage 200 is... Figure 7 (As shown) A vacuum is drawn; under the pressure difference between the upper and lower surfaces of the wafer, the warped wafer adheres to the chuck stage 200. This setup effectively prevents gaps from forming between the warped wafer and the surface of the chuck stage 200, thus ensuring reliable adhesion of the warped wafer; during wafer thinning, the flatness of the wafer tightly adhered to the surface of the chuck stage 200 meets the process requirements to ensure wafer processing quality.

[0049] Figure 3 yes Figure 2 The enlarged view at point A shows that the limiting ring 30 is a ring structure with a limiting stage 31. The bottom surface of the limiting stage 31 is a plane, which is used to press against the edge of the warped wafer to limit the wafer in the vertical direction and ensure the accuracy of the wafer placement position.

[0050] Furthermore, the limiting ring 30 also includes an inclined portion 32, which is disposed on the outer side of the limiting platform 31, and the two are integrally formed; wherein, the inclined portion 32 is provided with an outwardly downward inclined surface 32a. It should be noted that, in this invention, "outwardly" means facing outward, referring to the direction from the center of the limiting ring 30 towards the outside; similarly, "inwardly" means facing inward, referring to the direction from the outer wall of the limiting ring 30 towards the center. It can be understood that the limiting platform 31 and the inclined portion 32 can also be adopted as separate structures to periodically replace worn and aged parts, thereby improving the flexibility of use of the limiting ring 30.

[0051] Figure 3 In the middle, the limiting ring 30 has a fluid hole 30a inside, so as to face towards Figure 7 This allows fluid to be ejected from the side edge space S. Specifically, one port of the fluid orifice 30a is located on the inclined surface 32a, and the other port of the fluid orifice 30a is connected to an external fluid source. That is, the fluid orifice 30a is connected to the edge space S, and external fluid can enter the edge space S through the fluid orifice 30a, so that the fluid entering the edge space S contacts the bottom surface of the warped portion of the wafer.

[0052] In this invention, there are multiple fluid holes 30a, which are uniformly arranged along the circumference of the limiting ring 30, such as... Figure 4 As shown. The uniform distribution of fluid holes 30a ensures the uniformity of fluid jetting towards the edge space S, thereby allowing the fluid to act evenly on the warped portion of the wafer and preventing uneven fluid force from affecting the accuracy of wafer placement. In some embodiments, the number of fluid holes 30a is 20-50, and the fluid holes 30a are circular holes with an inner diameter controlled between 1-3 mm to control the flow rate of the jetted fluid and prevent excessive jetting fluid from causing the wafer to float on the surface of the chuck stage 200, thus affecting the accuracy of wafer placement.

[0053] In one embodiment of the present invention, the fluid orifice 30a includes at least an inclined section, such that the inclined section intersects with the inclined surface 32a, allowing the fluid orifice 30a to supply fluid toward the edge space S. In another aspect of this embodiment, the inner diameter of the inclined section of the fluid orifice 30a gradually increases from the outside to the inside, in order to control the flow rate through the fluid orifice 30a and prevent excessive flow velocity of the outflowing fluid from affecting the stability of the loaded wafer. In some embodiments, the angle between the inclined section of the fluid orifice 30a and the horizontal plane is 30-60°, preferably 45°, to quickly supply liquid or other fluid toward the edge space S, thereby rapidly forming a liquid film between the warped portion of the wafer and the chuck stage 200 to enhance their viscosity.

[0054] As one aspect of this embodiment, the angle between the inclined sections of adjacent fluid orifices 30a and the horizontal plane is different, such as the difference between the two being between 5 and 15°, so that the supplied fluid can quickly cover the wafer warped portion, so as to quickly form a liquid film between the wafer warped portion and the chuck stage 200.

[0055] Figure 3 In the illustrated embodiment, a first fluid channel 11 is disposed on the edge of the support disk 10, and the first fluid channel 11 communicates with the fluid hole 30a of the limiting ring 30; simultaneously, a vertical connecting hole 12 is provided inside the support disk 10, one end of the connecting hole 12 communicates with the first fluid channel 11, and the other end is fitted with an air pipe connector, while an external fluid source (not shown) is connected to the air pipe connector. Fluid can enter the edge space S through the connecting hole 12, the first fluid channel 11, and the fluid hole 30a.

[0056] Understandable Figure 3 This is just one embodiment of introducing fluid toward the edge space S; other implementations can also achieve the above function. For example, a sealing ring can be provided above the support plate 10, and a fluid conduit communicating with the limiting ring 30 can be arranged inside the sealing ring to introduce external fluid into the edge space S.

[0057] Figure 5 yes Figure 2 The enlarged view at point B shows that the adsorption assembly 20 includes an adsorption disk 21 and a guide rod 22, with the adsorption disk 21 positioned at the lower end of the guide rod 22. Specifically, a vertical linear bearing 23 is provided inside the support disk 10, and the guide rod 22 is slidably connected to the linear bearing 23 to drive the adsorption disk 21 at the lower end of the guide shaft 22 to move up and down.

[0058] Specifically, the guide rod 22 has a hollow structure. The lower end of the guide rod 22 is connected to the internal cavity of the adsorption disk 21, and the upper end of the guide rod 22 is connected to an external vacuum source to form a negative pressure on the bottom surface of the adsorption disk 21 to adsorb the wafer.

[0059] It is understood that, in some embodiments, the interior of the support disk 10 may be provided with other guiding devices that function equivalent to the linear bearing 23, so that the guide rod 22 can move in the thickness direction of the support disk 10 to change the vertical position of the adsorption disk 21 of the adsorption assembly 20, thereby changing the position of the wafer adsorbed below the adsorption disk 21.

[0060] Furthermore, the adsorption assembly 20 also includes an elastic element 24, which is sleeved on the outer periphery of the guide rod 22 and presses against the adsorption disk 21 and the support disk 10. With this configuration, the adsorption disk 21 can float up and down in the vertical direction to accommodate the loading and transfer of wafers with different degrees of warpage.

[0061] As one aspect of this embodiment, the elastic element 24 is a compression spring, rubber spring, etc. The elastic element 24 can enhance the flexibility of the loading head 130 and prevent the loading head 130 from being too rigid, which would cause the loaded wafer to break.

[0062] When the loading head 130 adsorbs the wafer and presses it against the suction cup stage 200, the swing arm 120 needs to move downward along the central axis of the fixed base 110 to press the wafer against the suction cup stage 200; at this time, the elastic element 24 is in a compressed state, and the guide rod 22 moves upward along the linear bearing 23.

[0063] Once the wafer is reliably adsorbed onto the surface of the suction cup stage 200, the suction cup 21 is connected to the atmosphere to relieve the pressure inside the chamber of the suction cup 21. The swing arm 120 drives the loading head 130 to move upward, and the suction assembly 20 leaves the wafer W. At this time, the elastic element 24 returns to its original state.

[0064] Figure 6 This is a schematic diagram of the interaction between the loading head 130 and the suction cup worktable 200 of the conveying device 100 provided in an embodiment of the present invention. Figure 7 yes Figure 6 A magnified view of a section at point C.

[0065] Figure 7 In the middle, the edge space S is formed by the wafer warp portion, the limiting ring 30 and the upper surface of the chuck stage 200, and the fluid hole 30a is set towards the edge space S so as to allow an appropriate amount of fluid to be introduced into the edge space S.

[0066] Because liquids, especially water, have a certain surface tension, liquid sprayed into the edge space S can increase the viscosity between the wafer W and the chuck stage, promoting surface adhesion between the wafer W and the chuck stage 200. Therefore, it is preferable to introduce liquids such as water into the edge space S to increase the adsorption force between the wafer W and the chuck stage 200.

[0067] In this invention, the limiting ring 30 is made of wear-resistant plastic, such as polytetrafluoroethylene, polyphenylene sulfide, polyoxymethylene resin, etc., to enhance the wear resistance of the limiting ring 30 and extend the service life of the loading head 130.

[0068] Furthermore, the bottom surface of the limiting ring 30 is a plane, meaning there is almost no gap between the limiting ring 30 pressing against the upper surface of the suction cup stage 200 and the upper surface of the suction cup stage 200, so that the enclosed edge space S forms a relatively sealed space, so as to evacuate the edge space S and help to achieve a tight fit between the warped part of the wafer and the suction cup stage 200.

[0069] In this invention, the support disk 10 is provided with at least one through hole 10a, such as... Figure 2As shown, the through-hole 10a is located inside the limiting ring 30. That is, the upper surface of the wafer held by the loading head 130 can communicate with the atmosphere through the through-hole 10a, as... Figure 6 As shown. The edge space S is connected to the lower surface of the warped portion of the wafer. In order to fit the warped portion of the wafer onto the surface of the chuck stage 200, it is necessary to use porous ceramic 200a ( Figure 7 (As shown) A vacuum is drawn into the edge space S, creating a pressure difference between the upper and lower surfaces of the warped portion of the wafer. Under the action of the pressure difference, the warped portion of the wafer is tightly adhered to the upper surface of the chuck stage 200.

[0070] In this invention, liquid can be introduced into the edge space S through the fluid hole 30a of the loading head 130, so that the warped portion of the wafer W can be made to adhere to the surface of the chuck stage 200 under the action of liquid film tension.

[0071] Meanwhile, the present invention also provides a wafer loading method, which utilizes the aforementioned transport device 100. A flowchart of the wafer loading method is shown below. Figure 8 As shown, the method includes:

[0072] S1, the swing arm 120 drives the loading head 130 to swing around the fixed base 110 to above the wafer to be loaded, the loading head 130 moves down, and the adsorption assembly 20 loads the wafer;

[0073] Specifically, the swing arm 120, which swings around the fixed base 110, drives the loading head 130 to the loading position. The swing arm 120 drives the loading head 130 to move downward along the axis of the fixed base 110, so that the adsorption disk 21 of the adsorption assembly 20 abuts against the upper surface of the wafer W to be loaded. Then, the vacuum source connected to the guide rod 22 of the adsorption assembly 20 is activated, so that the adsorption disk 21 forms a negative pressure to adsorb the wafer W, thereby realizing the loading of the wafer.

[0074] S2, the loading head 130 loaded with the wafer moves upward and moves with the swing arm 120 to above the chuck stage 200, and the loading head 130 moves downward to place the wafer on the chuck stage 200.

[0075] Driven by the swing arm 120, the loading head 130 moves to the unloading position (i.e. above the suction cup stage 200), and the swing arm 120 drives the loading head 130 to move downward, so that the wafer W abuts against the upper surface of the suction cup stage 200.

[0076] S3, the fluid hole of the limiting ring 30 sprays liquid toward the edge space S, evacuating the porous ceramic of the suction cup stage 200, so that the edge space S forms a negative pressure; under the action of the pressure difference between the upper and lower surfaces of the wafer W, the warped wafer W adheres to the suction cup stage 200.

[0077] Figure 6In the embodiment shown, the lower surface of the wafer W abuts against the upper surface of the chuck stage 200; then, liquid is sprayed toward the edge space S through the fluid hole 30a, and under the action of liquid film tension, the warped portion of the wafer W adheres to the surface of the chuck stage 200.

[0078] Next, the vacuum source configured on the suction cup stage 200 is activated to clean the porous ceramic 200a. Figure 7 (As shown) Vacuuming is performed; since the edge space S is connected to the micropores of the porous ceramic 200a, a vacuum is gradually formed in the edge space S.

[0079] The upper surface of the wafer is connected to the atmosphere through the through hole 10a of the support disk 10, which creates a pressure difference between the upper and lower surfaces of the wafer. Under the action of the pressure difference, the warped part of the wafer gradually conforms to the surface of the chuck stage 200.

[0080] Once the wafer is fully attached to the chuck stage 200, the fluid supply to the fluid orifice 30a is stopped; the adsorption assembly 20 is opened, and the swing arm 120 drives the loading head 130 to move upward and / or swing away from the chuck stage 200.

[0081] Furthermore, this invention also discloses a wafer thinning apparatus 1000, the schematic diagram of which is shown below. Figure 9 As shown, the wafer thinning equipment 1000 includes a thinning unit 1 and the aforementioned transport device 100. The transport device 100 is located near the suction cup stage 200 of the thinning unit 1. The transport device 100 can transfer the thinned wafer to other functional units to ensure the smooth operation of the wafer thinning equipment 1000.

[0082] Figure 9 The wafer thinning equipment 1000 also includes:

[0083] Front-end unit 2 is used to realize the entry and exit of wafers. Front-end unit 2 is located at the front end of wafer thinning equipment 1000.

[0084] And polishing unit 3, which is located between front-end unit 2 and thinning unit 1, is used to perform chemical mechanical polishing on the thinned wafer.

[0085] Specifically, the front-end unit 2 is located on the front side of the wafer thinning equipment 1000 and is a transition module for moving wafers from the outside to the inside of the equipment, used to realize the loading and unloading of wafers.

[0086] The thinning unit 1 is located at the end of the wafer thinning equipment 1000 and is used to perform wafer thinning processes, such as rough grinding and / or fine grinding.

[0087] A transfer unit 4 is configured on the side of the polishing unit 3, which is arranged along the length of the wafer thinning equipment 1000 to connect the front end unit 2 and the thinning unit 1. The handling device 100 of the present invention can interact with the transfer unit 4. Since the loading head 130 of the handling device 100 provided by the present invention can handle the warped wafer and reliably load the warped wafer onto the surface of the chuck stage 200 by configuring the limiting ring 30, the flatness of the wafer surface is ensured, thereby improving the processing quality of wafer thinning.

[0088] Although embodiments of the invention have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.

Claims

1. A transport device for warped wafers, characterized in that, It includes a fixed base, a swing arm, and a loading head, wherein the loading head is disposed at the end of the swing arm and swings around the fixed base; the loading head includes: The support plate is located below the swing arm; An adsorption assembly, located in the center of a support disk, is used for vacuum adsorption of warped wafers. A limiting ring is disposed on the outer edge of the support plate, and at least partially abuts against the edge of the wafer. The limiting ring is provided with a limiting platform, the bottom surface of which is flat to abut against the edge of the warped wafer. The limiting ring also includes an inclined portion disposed on the outside of the limiting platform. The inclined portion is provided with an inclined surface that faces outward and downward. The limiting ring abuts against the upper surface of the suction cup worktable, so that the enclosed edge space is a relatively sealed space. When the loading head interacts with the chuck stage, a vacuum is drawn in the edge space formed by the warped part of the wafer, the limiting ring and the chuck stage. Under the action of the pressure difference between the upper and lower surfaces of the wafer, the warped wafer fits into the chuck stage. The limiting ring is internally configured with multiple fluid holes, which are evenly distributed along the circumference of the limiting ring. One port of each fluid hole is located on the inclined surface, and the other port is connected to an external fluid source. The fluid holes spray liquid toward the edge space when the loading head interacts with the chuck stage to exchange wafers. The support disk is provided with at least one through hole, and the through hole is located inside the limiting ring, the through hole allowing the upper surface of the wafer to communicate with the atmosphere.

2. The conveying device as described in claim 1, characterized in that, The limiting ring is made of wear-resistant plastic.

3. The conveying device as described in claim 1, characterized in that, The adsorption assembly includes an adsorption disk and a guide rod. The adsorption disk is located at the lower end of the guide rod and can move vertically.

4. The conveying device as described in claim 3, characterized in that, The adsorption assembly also includes an elastic element, which is sleeved on the outer periphery of the guide rod and presses against the adsorption disk and the support disk.

5. A wafer loading method, characterized in that, Using the conveying device according to any one of claims 1 to 4, comprising: S1, the swing arm drives the loading head to swing around the fixed base to above the wafer to be loaded, the loading head moves down, and the adsorption assembly loads the wafer; S2, the loading head loaded with the wafer moves up and moves with the swing arm to above the chuck stage, and the loading head moves down to place the wafer on the chuck stage; S3, before the edge space is evacuated, the fluid hole of the limiting ring sprays liquid toward the edge space to evacuate the porous ceramic of the suction cup stage, so that the edge space forms a negative pressure; under the action of the pressure difference between the upper and lower surfaces of the wafer, the warped wafer adheres to the suction cup stage.

6. A wafer thinning equipment, characterized in that, The device includes a thinning unit and a transport device as described in any one of claims 1 to 4, wherein the transport device is disposed adjacent to a chuck stage of the thinning unit to realize wafer transport.

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