Carrier transfer module, semiconductor processing apparatus, and wafer processing method

Abstract

The present disclosure provides a carrier transfer module, a semiconductor processing device and a wafer processing method. The carrier transfer module comprises a transfer chamber and a support seat arranged in the transfer chamber. The transfer chamber has a temporary storage area and a temperature control area connected thereto. The temporary storage area is located above the temperature control area. The support seat comprises a support frame, a carrier table and a support column. The support frame is installed above the carrier table and is used to carry a wafer in the temporary storage area. The carrier table is installed on the top of the support column and is used to carry a wafer in the temperature control area. The support column extends into the transfer chamber from the bottom and is used to control the movement of the carrier table and the support frame in the height direction of the transfer chamber. A temperature control disc is arranged in the carrier table and is used to control the temperature of the wafer on the carrier table. The carrier transfer module can prevent wafer pollution, improve wafer yield and reduce the manufacturing cost of semiconductor devices.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor manufacturing technology, and in particular to a carrier transmission module, semiconductor processing equipment, and wafer processing method. Background Technology

[0002] In the manufacture of semiconductor devices, various processes such as film deposition, etching, oxidation, and diffusion are performed on semiconductor wafers (hereinafter referred to as wafers). To improve the productivity of semiconductor devices, multi-chamber semiconductor processing equipment can be used.

[0003] A multi-chamber semiconductor processing system typically includes: a stage for holding and transporting multiple wafers; a loader module (LM) located at atmospheric pressure and equipped with a robotic arm for wafer transport; multiple process modules (PMs) positioned around the loader module and performing predetermined processing on the wafers in a vacuum environment; and a load lock module (LLM) positioned between the process modules and the loader module, capable of switching between vacuum and atmospheric pressure environments. Unprocessed wafers on the stage can be sequentially fed into the process modules via the loader module and the load lock module for processing. Processed wafers are then sequentially fed into the next process module via the load lock module and the loader module.

[0004] A purge storage (PST) chamber, maintained under negative pressure, is typically located between the load locking module and the load module. After the process is completed, the wafer is transferred from the load locking module to the purge storage chamber for purification to remove any residual gas molecules. After purification, the wafer is then transferred to the next processing module via the load module.

[0005] However, after the processed wafers are exposed to the atmospheric environment in the loading and locking module, the gas molecules remaining on the wafer surface will react with the air and easily condense on the wafer surface to form byproducts that are difficult to remove from the purification storage compartment. This will directly affect the wafer yield. Summary of the Invention

[0006] To address at least one of the problems mentioned in the background art, this disclosure provides a carrier transmission module, a semiconductor processing apparatus, and a wafer processing method. The carrier transmission module can prevent wafer contamination, improve wafer yield, and reduce the manufacturing cost of semiconductor devices.

[0007] In a first aspect, this disclosure provides a carrier transmission module, including a transmission chamber and a support seat disposed within the transmission chamber;

[0008] The transfer chamber has a connected temporary storage area and a temperature control area, with the temporary storage area located above the temperature control area;

[0009] The support includes a support frame, a carrier platform, and a support column; the support frame is installed above the carrier platform and is used to carry the wafer in the temporary storage area; the carrier platform is installed on top of the support column and is used to carry the wafer in the temperature control area; the support column extends into the transfer chamber from the bottom and is used to control the movement of the carrier platform and the support frame along the height direction of the transfer chamber.

[0010] The support platform is equipped with a temperature control panel, which is used to control the temperature of the wafers located on the support platform.

[0011] In one possible implementation, the transfer chamber is provided with an air extraction pipe and at least one air inlet pipe.

[0012] In one possible implementation, the intake pipe includes a first intake pipe located above the temporary storage area.

[0013] In one possible implementation, the intake pipe further includes a second intake pipe located below the temperature control zone.

[0014] In one possible implementation, the second air inlet pipe and the first air inlet pipe are located on opposite sides of the transfer chamber, and the air outlet range of the second air inlet pipe and the air outlet range of the first air inlet pipe cover both sides of the wafer, respectively.

[0015] In one possible implementation, a motor is installed inside the support column, and the motor is connected to the support platform, driving the support platform to rotate.

[0016] In one possible implementation, the support is provided with an ejector assembly, which includes a plurality of spaced-apart push rods that retract into the support platform or extend above the top surface of the support platform.

[0017] In one possible implementation, the ejection assembly further includes a drive rod located within the support column and movable axially along the support column, with the ejector rod connected to the drive rod.

[0018] In one possible implementation, the support platform is provided with a through hole penetrating the temperature control plate, and the push rod moves up and down within the through hole, including: when rising, extending out of the through hole to be higher than the top surface of the support platform, and when descending, retracting into the through hole to be lower than the top surface of the support platform.

[0019] In one possible implementation, the support frame includes at least two sets of support portions, which are spaced apart circumferentially along the support platform. The area enclosed by the support portions is used to place the wafer, and different support portions are used to support corresponding different parts of the wafer.

[0020] In one possible implementation, the support includes a mounting plate and a support plate;

[0021] The bottom end of the mounting plate is connected to the side wall of the carrier platform, and the top end of the mounting plate extends toward the top of the transfer chamber. The support plate is connected to the side of the mounting plate facing the center of the transfer chamber, and the wafer is overlapped on the surface of the support plate.

[0022] In a second aspect, this disclosure provides a semiconductor processing apparatus, including a loading module, a processing module, and a bearer transmission module as described above;

[0023] The loading module and the processing module are located at different positions around the load-bearing transmission module. There are channels between the loading module and the load-bearing transmission module, and between the processing module and the load-bearing transmission module. The channels are equipped with openable and closable doors.

[0024] In one possible implementation, the loading module is provided with a first robotic arm that can extend into the transfer chamber that carries the transfer module.

[0025] The processing module is equipped with a second robotic arm, which can extend into the transmission chamber that carries the transmission module.

[0026] Thirdly, this disclosure provides a wafer processing method applied to the semiconductor processing equipment described above, comprising:

[0027] The wafer to be processed is fed from the loading module into the support frame in the transfer chamber of the carrier transfer module;

[0028] The support frame moves up along the height of the transfer chamber until the wafer to be processed is located in the temporary storage area of ​​the transfer chamber;

[0029] Reduce the gas pressure inside the transfer chamber to change the transfer chamber from an atmospheric environment to a vacuum environment;

[0030] The support frame moves downward along the height of the transfer chamber until the wafer to be processed reaches the predetermined position;

[0031] The wafer to be processed is transferred from the transfer chamber to the processing module for processing;

[0032] The processed wafer is transferred from the processing module to a predetermined position within the transfer chamber;

[0033] The processed wafer is placed on a support platform located in the temperature-controlled area of ​​the transfer chamber;

[0034] The gas pressure in the transfer chamber is increased, and the temperature of the processed wafer is gradually adjusted by the temperature control plate located in the carrier stage until the temperature of the processed wafer reaches room temperature.

[0035] In one possible implementation, reducing the gas pressure inside the delivery chamber includes: removing the gas inside the delivery chamber through an extraction pipe disposed inside the delivery chamber.

[0036] Increasing the gas pressure within the transfer chamber includes: introducing gas into the transfer chamber through an air inlet pipe installed within the transfer chamber.

[0037] In one possible implementation, after placing the processed wafer on the stage, the process includes:

[0038] Control the rotation of the support stage to drive the processed wafers located on the support stage to rotate synchronously.

[0039] The carrier transfer module and semiconductor processing equipment disclosed herein include a carrier transfer module with a temporary storage area and a temperature control area connected within its transfer chamber. A support base is installed within the transfer chamber, and the support base, driven by support columns, moves a carrier platform and a support frame mounted above the carrier platform along the height of the transfer chamber. Unprocessed wafers are transferred to the temporary storage area and placed on the support frame. By extracting air from the transfer chamber, the unprocessed wafers undergo a transition from atmospheric pressure to negative pressure within the temporary storage area before being transferred to the processing module for processing. After processing, the wafers are transferred to the temperature control area and supported on the top surface of the carrier platform. By introducing inert gas into the transfer chamber, residual gas molecules on the wafer surface on the carrier platform are prevented from reacting with air to generate byproducts. Furthermore, a temperature control plate within the carrier platform controls the wafer temperature, gradually reducing it to room temperature. Even if byproducts are generated, they are prevented from condensing on the wafer surface. This improves the yield of semiconductor devices and reduces their manufacturing costs. Attached Figure Description

[0040] To more clearly illustrate the technical solutions in the embodiments of this disclosure or the prior art, the accompanying drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0041] Figure 1 This is a schematic diagram of the structure of a semiconductor processing device provided in an embodiment of the present disclosure;

[0042] Figure 2 This is a schematic diagram of the structure of a bearer transmission module provided in an embodiment of the present disclosure;

[0043] Figure 3a A top view of a temperature control zone provided in an embodiment of this disclosure;

[0044] Figure 3b A top view of another temperature control zone provided in an embodiment of this disclosure;

[0045] Figure 4A top view of the temporary storage area provided in an embodiment of this disclosure;

[0046] Figure 5 for Figure 2 A schematic diagram of the structure when the push rod of the load-bearing transmission module is in the ejected state;

[0047] Figure 6 A timeline of environmental transitions in a bearer transmission module provided in this embodiment of the disclosure;

[0048] Figure 7 This is a flowchart of the wafer processing method provided in this embodiment.

[0049] Explanation of reference numerals in the attached figures:

[0050] 100 - Transport module; 200 - Loading module; 300 - Processing module; 400 - Wafer;

[0051] 110 - Transfer chamber; 120 - Support base; 130 - Air inlet pipe; 140 - Air extraction pipe; 210 - First robotic arm; 310 - Second robotic arm;

[0052] 111-Temporary storage area; 112-Temperature control area; 113-Passageway; 121-Support column; 122-Bearing platform; 123-Support frame; 123a-Support section; 131-First air inlet pipe; 132-Second air inlet pipe;

[0053] 1211-Motor; 1221-Temperature control panel; 1222-Ejection assembly; 1231-Mounting plate; 1232-Support plate; 1222a-Ejector rod; 1222b-Drive rod;

[0054] a-Air outlet. Detailed Implementation

[0055] As described in the background art, in the semiconductor processing equipment of the related art, after the wafer finishes the process in the processing module, for example, after the wafer finishes etching (dry etching or wet etching), it is transferred to the loading and locking module. In the loading and locking module, the vacuum environment is converted to the atmospheric environment. After that, it is transferred from the loading and locking module to the purification storage chamber for purification treatment to remove the gas molecules remaining on the wafer surface (after the process). Finally, the wafer is transferred to the loading module for subsequent processing.

[0056] However, during the loading and locking of the wafer, the wafer's temperature changes due to contact with the atmospheric environment. Gas molecules remaining on the wafer surface react with gas molecules in the air, easily forming condensed byproducts on the wafer surface. These byproducts adhere to the wafer surface and are difficult to remove during the clean storage process in the clean storage chamber. This can cause wafer damage or even scrap, reducing the yield of semiconductor devices and increasing the manufacturing cost of semiconductor devices.

[0057] During the processing of the wafer in the processing module, such as etching, film formation, oxidation or diffusion, the temperature is usually maintained at a high level. After the wafer is processed and transferred to the loading and locking module, the wafer comes into contact with the atmospheric environment, the temperature of the wafer decreases, and the gas molecules remaining on the wafer surface react with the gas molecules in the air, and the resulting byproducts are easy to condense and adhere to the wafer surface.

[0058] Taking the reaction gas containing SiF4 introduced during wafer processing in the processing module as an example, SiF4 reacts with H2O to generate SiO2 and HF gas. When the wafer is transferred to the loading and locking module, the HF gas remaining on its surface will react with NH3 in the air to generate NH4F liquid. As the temperature of the wafer decreases when it comes into contact with the atmospheric environment, the NH4F liquid will condense and adhere to the wafer surface, forming byproducts that are difficult to remove.

[0059] In view of this, the present disclosure provides a carrier transmission module and a semiconductor processing apparatus. The carrier transmission module has a temporary storage area and a temperature control area connected within its transmission chamber. A support base is provided within the transmission chamber, and the support base, driven by support columns, moves a carrier platform and a support frame mounted above the carrier platform along the height direction of the transmission chamber. Unprocessed wafers can be transferred to the temporary storage area and placed on the support frame. After the temporary storage environment is changed from atmospheric pressure to negative pressure, the wafers are then transferred to the processing module for processing. After processing, the wafers can be transferred to the temperature control area and supported on the carrier platform. By introducing inert gas into the transmission chamber, residual gas molecules on the wafer surface on the carrier platform are prevented from reacting with air to generate byproducts. Furthermore, the temperature of the wafers is controlled by a temperature control plate within the carrier platform, gradually reducing the wafer temperature to room temperature. Even if byproducts are generated, they are prevented from condensing on the wafer surface. This improves the yield of semiconductor devices and reduces their manufacturing costs.

[0060] To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, the technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this disclosure, and not all embodiments. Based on the embodiments of this disclosure, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this disclosure.

[0061] Figure 1 This is a schematic diagram of the structure of a semiconductor processing apparatus provided in an embodiment of this disclosure. (Refer to...) Figure 1 As shown, the semiconductor device provided in this embodiment includes a loading module 200, a processing module 300, and a transport module 100.

[0062] The loading module 200 is used to load the wafer 400. The loading module 200 is typically located under atmospheric pressure. For example, multiple supports (not shown in the figure) can be spaced apart within the loading module 200, each support capable of supporting one wafer 400, thus allowing the loading module 200 to hold multiple wafers 400. The processing module 300 is used to process the wafer 400. The processing module 300 is typically located under vacuum conditions to perform predetermined processing on the wafer 400, such as etching, film deposition, oxidation, and diffusion. The carrier transfer module 100 is disposed between the loading module 200 and the processing module 300 to facilitate the transfer of the wafer 400 between them. The carrier transfer module 100 can switch between atmospheric pressure and negative pressure environments.

[0063] The loading module 200 and the processing module 300 are both located around the carrier transmission module 100, and are positioned at different locations around the carrier transmission module 100. Channels 113 are provided between the loading module 200 and the carrier transmission module 100, and between the processing module 300 and the carrier transmission module 100. Openable and closable door panels can be installed at these channels 113. When wafers 400 need to be transferred, the door panels open to allow wafers 400 to be transferred between adjacent modules; when wafers 400 do not need to be transferred, the door panels remain closed to ensure the sealing of each module.

[0064] Reference Figure 1As shown, the carrier transmission module 100 includes a transmission chamber 110 and a support base 120. The support base 120 is installed at the bottom of the transmission chamber 110. The support base 120 includes a support column 121, a support platform 122, and a support frame 123. The support column 121 can be supported on a support foundation (e.g., the ground). The support column 121 extends into the transmission chamber 110 through the inner bottom wall of the transmission chamber 110. Alternatively, the support column 121 can also be installed on the inner bottom wall of the transmission chamber 110. The support column 121 extends towards the inner top wall of the transmission chamber 110. The support platform 122 is installed on the top of the support column 121.

[0065] Along the height of the transfer chamber 110, the transfer chamber 110 is divided into a temporary storage area 111 and a temperature control area 112. The temporary storage area 111 is located above the temperature control area 112, and the temporary storage area 111 and the temperature control area 112 are interconnected. Both the temporary storage area 111 and the temperature control area 112 can be used to place the wafer 400. Among them, the support platform 122 is located in the temperature control area 112, and the support frame 123 is installed on the support platform 122 and extends into the temporary storage area 111. The support frame 123 is used to support the wafer 400 located in the temporary storage area 111. The top surface of the support platform 122 (the side surface of the support platform 122 facing away from the support column 121) is used to support the wafer 400 located in the temperature control area 112, and the support platform 122 can control the temperature of the wafer 400 to achieve gradual temperature change of the wafer 400.

[0066] The loading module 200 is equipped with a first robotic arm 210, which is used to transfer the wafer 400 from the loading module 200 to the carrier transmission module 100, and also to transfer the wafer 400 from the carrier transmission module 100 to the loading module 200. The processing module 300 is equipped with a second robotic arm 310, which is used to transfer the wafer 400 from the carrier transmission module 100 to the processing module 300, and also to transfer the wafer 400 from the processing module 300 to the carrier transmission module 100.

[0067] For example, the wafer 400 to be processed in the loading module 200, after the door between the loading module 200 and the carrier transfer module 100 is opened, is held by the first robotic arm 210 and enters the transfer chamber 110 through the channel 113 between the loading module 200 and the carrier transfer module 100, and is placed on the support frame 123 in the temporary storage area 111. Then, the channel 113 between the loading module 200 and the carrier transfer module 100 is closed by the door. At this time, the channel 113 between the processing module 300 and the carrier transfer module 100 is also closed by the door. The transfer chamber 110 is in a closed environment. By evacuating the gas in the transfer chamber 110, the wafer 400 is changed from an atmospheric environment to a negative pressure environment in the temporary storage area 111. Subsequently, the door between the processing module 300 and the carrier transmission module 100 is opened, and the wafer 400 is held by the second robotic arm 310 and transmitted to the processing module 300 for processing through the channel 113 between the processing module 300 and the carrier transmission module 100.

[0068] After being processed by the processing module 300, the wafer 400 is held by the second robotic arm 310 and transferred into the transfer chamber 110 of the carrier transfer module 100 through the channel 113 between the processing module 300 and the carrier transfer module 100 after the door between the processing module 300 and the carrier transfer module 100 is opened. Then, the wafer 400 is carried on the top surface of the carrier stage 122 located in the temperature control zone 112. At this time, inert gas is introduced into the transfer chamber 110 to remove residual gas molecules on the surface of the wafer 400. At the same time, the carrier stage 122 can control the temperature of the wafer 400 to change gradually and slowly. Even if the residual gas molecules on the surface of the wafer 400 react with the air to produce by-products, it can prevent the by-products from condensing on the surface of the wafer 400 due to rapid temperature changes, thus ensuring the cleanliness of the wafer 400, improving the yield of semiconductor devices, and reducing the manufacturing cost of semiconductor devices.

[0069] Reference Figure 1As shown, in some embodiments, the first robotic arm 210 in the loading module 200 (referring to the direction indicated by the arrow) can not only translate between the loading module 200 and the carrier transfer module 100, but also move along the height direction of the semiconductor processing equipment. The first robotic arm 210 can directly place the unprocessed wafer 400 onto the support frame 123 in the temporary storage area 111 of the transfer chamber 110. The second robotic arm 310 in the processing module 300 (referring to the direction indicated by the arrow) can only translate between the processing module 300 and the carrier transfer module 100. The horizontal position of the second robotic arm 310 is shown by the dotted line in the figure. When the wafer 400 is transferred from the temporary storage area 111 to the processing module 300 or from the processing module 300 to the temperature control area 112, the support 120 needs to move to facilitate the transfer of the wafer 400 between the support frame 123 and the second robotic arm 310, and between the second robotic arm 310 and the carrier platform 122.

[0070] In other embodiments, the second robotic arm 310 in the processing module 300 can also move along the height direction of the semiconductor processing equipment. In this case, the support platform 122 can be fixed, and the second robotic arm 310 can move to directly grab the wafer 400 from the support frame 123 in the temporary storage area 111 and transfer it into the processing module 300. After the wafer 400 is processed, the second robotic arm 310 can move to the height position of the support platform 122 after grabbing the wafer 400, and place the wafer 400 directly on the support platform 122.

[0071] In addition, the semiconductor processing equipment may also include other modules. For example, the semiconductor processing equipment may also include a loading module (not shown in the figure). The loading module may include, for example, multiple front opening unified pods (FOUPs). FOUPs are transport containers that hold multiple wafers 400. Wafers 400 can be transferred from FOUPs to loading module 200 and then sequentially transferred to processing module 300 for processing. After processing, wafers 400 can also be transferred from loading module 200 to FOUPs.

[0072] The following are all in the style of Figure 1 Taking the example that the second robotic arm 310 in the processing module 300 shown can only translate between the processing module 300 and the carrier transmission module 100, the carrier transmission module 100 will be described in detail.

[0073] Figure 2 This is a schematic diagram of a transmission module provided in an embodiment of this disclosure. (Refer to...) Figure 2As shown, the transmission chamber 110 carrying the transmission module 100 is provided with an air inlet pipe 130 and an air extraction pipe 140. The air inlet pipe 130 is used to introduce inert gas (such as nitrogen) into the transmission chamber 110, and the air extraction pipe 140 is used to extract the gas in the transmission chamber 110.

[0074] When the wafer 400 is not being transferred, the transfer chamber 110 can be in an atmospheric environment. When the wafer 400 to be processed enters the transfer chamber 110 from the loading module 200 and is supported on the support frame 123, the gas in the transfer chamber 110 is evacuated through the evacuation pipe 140 until a vacuum environment is reached in the transfer chamber 110. After the wafer 400 changes from an atmospheric pressure environment to a vacuum environment, it is then transferred to the processing module 300 for processing. When the processed wafer 400 enters the transfer chamber 110 from the processing module 300 and is supported on the carrier stage 122, inert gas is introduced into the transfer chamber 110 through the air inlet pipe to remove residual gas molecules on the surface of the wafer 400. At the same time, the carrier stage controls the temperature of the wafer 400 to gradually change to room temperature to avoid the generation of by-products on the surface of the wafer 400.

[0075] In some embodiments, the air inlet pipe provided in the transfer chamber 110 may include a first air inlet pipe 131. The first air inlet pipe 131 may be located above the temporary storage area 111. For example, the first air inlet pipe 131 may be located near the top of the transfer chamber 110, and the airflow blown in by the first air inlet pipe 131 flows downward from the temporary storage area 111 to the temperature control area 112. In this way, the first air inlet pipe 131 can be prevented from interfering with the movement of the support frame 123. While ensuring that the first air inlet pipe 131 stably supplies gas into the transfer chamber 110, the support column 121 can also drive the carrier platform 122 and the support frame 123 to move up and down smoothly.

[0076] Similarly, the suction pipe 140 can also be located above the temporary storage area 111, for example, it can be positioned near the top of the transfer chamber 110. This avoids interference from the suction pipe 140 with the movement of the support frame 123, and allows the suction pipe 140 to better function in the temporary storage area 111. For example, the first air inlet pipe 131 and the suction pipe 140 are spaced a certain distance from the portion of the support frame 123 that supports the wafer 400, thus avoiding interference with the first robotic arm 210 placing the wafer 400 on the support frame 123.

[0077] Furthermore, the first air inlet pipe 131 and the exhaust pipe 140 can be located on opposite sides of the transfer chamber 110, respectively. Thus, inert gas enters from one side of the transfer chamber 110, and the exhaust pipe 140 removes gas from the other side of the transfer chamber 110, making the airflow within the transfer chamber 110 more orderly and stable. The inert gas entering through the first air inlet pipe 131 can better act on the wafer 400 on the support frame 123. For example, by bringing the outlet a of the first air inlet pipe 131 closer to the support frame 123 and increasing the area of ​​the outlet a, more inert gas from the first air inlet pipe 131 can be blown onto the surface of the wafer 400, helping to remove dust, water stains, and other foreign matter from the surface of the wafer 400.

[0078] Continue to refer to Figure 2 As shown, to more quickly and thoroughly remove residual gas molecules from the surface of wafer 400, a second air inlet pipe 132 is also provided in the transfer chamber 110. The second air inlet pipe 132 is located in the temperature control zone 112. The second air inlet pipe 132 is also used to introduce inert gas (such as nitrogen) into the transfer chamber 110, increasing the concentration of inert gas in the transfer chamber 110. Since the second air inlet pipe 132 is located in the temperature control zone 112, the inert gas introduced by the second air inlet pipe 132 is mainly concentrated in the temperature control zone 112, which can more quickly and effectively remove residual gas molecules from the surface of wafer 400. In addition, with the inert gas introduced by the first air inlet pipe 131, the temperature control zone 112 is filled with inert gas, which can quickly and completely remove residual gas molecules from the surface of wafer 400.

[0079] For example, the second air inlet pipe 132 can be located below the temperature control zone 112. For instance, the second air inlet pipe 132 can be positioned near the bottom of the transfer chamber 110 to avoid interfering with the movement of the carrier stage 122 and the support frame 123. Furthermore, the first air inlet pipe 131 and the second air inlet pipe 132 blow inert gas into the transfer chamber 110 from the top and bottom, respectively, which can accelerate the flow speed of the inert gas in the transfer chamber 110. The airflow blown out by the first air inlet pipe 131 and the second air inlet pipe 132 can also converge near the top surface of the carrier stage 122 to form a vortex flow, effectively increasing the gas pressure near the carrier stage 122, improving the efficiency of removing residual gas molecules from the surface of the wafer 400, and enhancing the removal effect.

[0080] Figure 3a A top view of a temperature control zone provided in an embodiment of this disclosure; Figure 3b This is a top view of another temperature control zone provided in an embodiment of this disclosure.

[0081] Reference Figure 3aAs shown, as an example, the temperature control zone 112 can be equipped with only one second air inlet pipe 132. The second air inlet pipe 132 is located on one side of the transfer chamber 110. Sufficient inert gas can be delivered through the second air inlet pipe 132, so that the temperature control zone 112 is filled with inert gas. Moreover, the inert gas delivered by the second air inlet pipe 132 acts directly on the wafer 400 on the support stage 122 with a shorter distance, which increases the airflow speed on the surface of the wafer 400 and ensures the purification effect on the wafer 400 located on the support stage 122.

[0082] In addition, the figure shows the orientation of the second air inlet pipe 132 and the first air inlet pipe 131. By positioning the second air inlet pipe 132 and the first air inlet pipe 131 on both sides of the transfer chamber 110, the inert gas delivered by the second air inlet pipe 132 and the inert gas delivered by the first air inlet pipe 131 enter from both sides of the transfer chamber 110 and blow onto the wafer 400. The air outlet range of the second air inlet pipe 132 and the air outlet range of the first air inlet pipe 131 can cover both sides of the wafer 400 respectively. In this way, different areas on the surface of the wafer 400 are blown by airflow with a large flow rate, which has a better effect on removing residual gas molecules on the surface of the wafer 400.

[0083] Reference Figure 3b As shown, as another example, two second air inlet pipes 132 can be provided in the temperature control zone 112. Similar to the orientation of the first air inlet pipe 131 when one second air inlet pipe 132 is provided, the two second air inlet pipes 132 can be located on both sides of the temperature control zone 112 respectively. The inert gas delivered by the two second air inlet pipes 132 enters from both sides of the transfer chamber 110 and blows towards the wafer 400, and the air outlet range of the two second air inlet pipes 132 can cover both sides of the wafer 400 respectively.

[0084] Since both second air inlet pipes 132 are located within the temperature control zone 112, and the distance between the two second air inlet pipes 132 and the wafer 400 on the support stage 122 is relatively close, the inert gas delivered by the two second air inlet pipes 132 can be quickly blown to the surface of the wafer 400. The airflow speed on the surface of the wafer 400 is faster, and the gas pressure on the surface of the wafer 400 is greater, which can more quickly blow away the gas molecules remaining on the surface of the wafer 400.

[0085] In other examples, depending on actual needs, two or more first air inlet pipes 131 may be provided in the temporary storage area 111, and three or more second air inlet pipes 132 may be provided in the temperature control area 112. This embodiment does not specifically limit the number and location of the first air inlet pipes 131 and the second air inlet pipes 132.

[0086] Regarding the temperature control of wafer 400 by the support stage 122, continue to refer to... Figure 2As shown, a temperature control plate 1221 is installed inside the support stage 122. Taking the temperature control plate 1221 as an example of electric heating, after the wafer 400 is processed, it is placed on the support stage 122. By controlling the input and output power of the temperature control plate 1221, the temperature of the temperature control plate 1221 is gradually changed, thereby controlling the temperature of the wafer 400. For example, the temperature control plate 1221 gradually decreases the temperature from 50°C to 23.5°C, so that the temperature of the wafer 400 after processing is gradually reduced, avoiding the formation of condensed by-products on the surface of the wafer 400, ensuring the cleanliness of the wafer 400, and improving the yield of the wafer 400.

[0087] In some embodiments, the temperature control plate 1221 may also be provided with a cooling channel, through which a cooling medium, such as cooling water or cooling air, circulates. By controlling the input power, output power, and circulation of the cooling medium of the temperature control plate 1221, the temperature of the temperature control plate 1221 is controlled.

[0088] The inert gas introduced into the transfer chamber 110 through the air inlet pipe 130 flows over the wafer 400 placed on the top surface of the support stage 122, which helps to remove residual gas molecules on the surface. In addition, the temperature change of the wafer 400 on the support stage 122 is controlled by the temperature control plate 1221, which effectively avoids the formation of condensed by-products on the surface of the wafer 400 and can completely remove residual gas molecules on the surface of the wafer 400.

[0089] Additionally, refer to Figure 3a or Figure 3b As shown, while the first air inlet pipe 131 and the second air inlet pipe 132 are feeding inert gas into the transfer chamber 110, the support platform 122 can also rotate. The wafer 400 on the support platform 122 rotates synchronously with the support platform 122. Thus, different areas of the wafer 400 in the circumferential direction can rotate to the position closest to the second air inlet pipe 132. The airflow velocity is relatively high in a certain range at the front end of the outlet a of the second air inlet pipe 132. Through the rotation of the wafer 400, the high-velocity inert gas can act on each area of ​​the wafer 400 in the circumferential direction. Each area on the surface of the wafer 400 can be subjected to strong gas pressure to remove residual gas molecules on the surface of the wafer 400 more quickly and thoroughly.

[0090] Combination Figure 2As shown, to achieve the rotation of the support platform 122, a motor 1211 can be installed on the support base 120. The motor 1211 can be installed inside the support column 121, and the motor shaft of the motor 1211 is connected to the support platform 122. When the processed wafer 400 is transferred to the temperature control zone 112 and placed on the support platform 122, the motor 1211 can be started to drive the support platform 122 to rotate, so that the wafer 400 rotates with the support platform 122. This allows each area of ​​the wafer 400 in the circumferential direction to pass near the outlet a of the second air inlet pipe 132. The airflow pressure near the outlet a of the second air inlet pipe 132 also acts on each area of ​​the wafer 400, completely removing the gas molecules remaining on the surface of the wafer 400.

[0091] Regarding how to transfer the unprocessed wafer 400 from the loading module 200 to the processing module 300, combined with Figure 1 and Figure 2 As shown, the unprocessed wafer 400 is held by the first robotic arm 210 in the loading module 200 and placed on the support frame 123. Then, the support column 121 moves the carrier platform 122 and the support frame 123 upwards, so that the wafer 400 is placed in the temporary storage area. The gas in the transfer chamber 110 is evacuated through the vacuum pipe 140, so that the wafer 400 changes from an atmospheric state to a vacuum state. Afterwards, the support column 121 moves the carrier platform 122 and the support frame 123 downwards until the wafer 400 on the support frame 123 moves to the horizontal height of the second robotic arm 310 in the processing module 300. The second robotic arm 310 enters the transfer chamber 110, moves horizontally and holds the wafer 400, and sends the wafer 400 into the processing module 300.

[0092] Continue to refer to Figure 2 As shown, the support frame 123 can be installed on the side wall of the support platform 122. Specifically, the support frame may include at least two sets of support parts 123a, which are spaced apart circumferentially along the support platform. The wafer is placed within the area enclosed by each support part 123a, and different parts of the wafer are supported on the corresponding support parts 123a. By providing two or more support parts 123a, the wafer can be stably supported, and clearance space is also provided between adjacent support parts 123a to facilitate the transfer of the wafer 400 by the first robotic arm 210 and the second robotic arm 310.

[0093] Figure 4 A top view of the temporary storage area provided in an embodiment of this disclosure. (Refer to...) Figure 4As shown in the figure, the air inlet pipe 130 and the air extraction pipe 140 are omitted mainly to show the position of the support frame 123. As mentioned above, channels 113 are provided between the carrier transmission module 100 and the loading module 200, as well as between the carrier transmission module 100 and the processing module 300. Taking the channels 113 as being located on opposite sides of the carrier transmission module 100, since the first robotic arm 210 and the second robotic arm 310 need to transfer the wafer 400 from the channels 113 on both sides, each support part 123a can avoid the channels 113 on both sides.

[0094] For example, in order to ensure that the support frame 123 stably supports the wafer 400, at least three support portions 123a can be provided at intervals. It should be understood that... Figure 4 Taking the example of two support parts 123a being provided at intervals on the inner side walls of the unopened channel 113 of the transmission chamber 110, the number of support parts 123a can actually be other numbers, and this embodiment does not limit this.

[0095] Continue to refer to Figure 2 As shown, the support portion 123a may include a mounting plate 1231 and a support plate 1232. The mounting plate 1231 may extend along the height direction of the transfer chamber 110, for example. The bottom end of the mounting plate 1231 is connected to the side wall of the support platform 122, and the top end of the mounting plate 1231 extends toward the top of the transfer chamber 110. The support plate 1232 is connected to the side surface of the mounting plate 1231 facing the center of the transfer chamber 110, and the edge of the wafer 400 overlaps the surface of the support plate 1232.

[0096] Additionally, the support plate 1232 can be connected to the upper middle part of the mounting plate 1231 in the height direction, and there is a gap between the top of the support plate 1232 and the top of the mounting plate 1231. The part of the mounting plate 1231 located above the support plate 1232 can serve as a limiting structure to limit the wafer 400 located on the support plate 1232, ensuring that the wafer 400 is located within the area enclosed by each mounting plate 1231, ensuring that the corresponding different parts of the edge of the wafer 400 can overlap with each support plate 1232, and ensuring that the wafer 400 is stably supported on each support plate 1232.

[0097] As mentioned earlier, since the second robotic arm 310 in the processing module 300 can only move horizontally and not vertically in the transport module 100, the support column 121 is needed to move the carrier platform 122 and the support frame 123 to achieve wafer 400 transfer. To stably receive the processed wafer 400 returned by the second robotic arm 310, refer to... Figure 2As shown, the support base 120 may also be provided with an ejector assembly 1222. By moving the ejector assembly 1222, the wafer 400 is transferred along the height direction in the transfer chamber 110 of the carrier transfer module 100, so as to receive the processed wafer 400 and place it stably on the top surface of the carrier platform 122.

[0098] The ejector assembly 1222 includes a plurality of spaced-apart ejector rods 1222a. For example, 3 to 8 ejector rods 1222a can be spaced circumferentially along the support platform 122, and the ejector rods 1222a can be evenly spaced. The support platform 122 has a plurality of through holes (not shown in the figure) corresponding to each ejector rod 1222a, and each ejector rod 1222a is accommodated in a corresponding through hole.

[0099] When wafer 400 does not need to be transferred, the push rod 1222a retracts into the through hole of the support platform 122, and the push rod 1222a is lower than the top surface of the support platform 122. When wafer 400 needs to be transferred, the push rod 1222a first rises, extends out of the through hole in the support platform 122 to be higher than the top surface of the support platform 122, and its top end can extend to the height of the second robotic arm 310 to support the wafer 400 held by the second robotic arm 310. Then, the push rod 1222a descends and gradually retracts into the through hole to be lower than the top surface of the support platform 122, so as to smoothly transfer the wafer 400 to the top surface of the support platform 122.

[0100] Additionally, the ejector assembly 1222 may also include a drive rod 1222b, which may be located, for example, within the support column 121. The push rod 1222a is connected to the drive rod 1222b. The drive rod 1222b can move axially along the support column 121. When the drive rod 1222b moves upward (towards the support column 122) from its initial position (where the push rod 1222a is retracted within the support platform 122), the push rod 1222a gradually extends upwards towards the support platform 122. When the drive rod 1222b moves downward (towards the bottom of the support column 121) from its ejected position (where the push rod 1222a is extended above the support platform 122), the push rod 1222a gradually descends from its extended state until it retracts into the support platform 122.

[0101] For example, the method by which the drive rod 1222b drives the push rod 1222a to move can be set according to actual needs. For instance, by setting a distance that ensures the push rod 1222a can reach the wafer 400 held by the second robotic arm 310 when it extends to its limit position, the drive rod 1222b can drive the push rod 1222a to stay only at the limit position of being pushed out. That is, the push rod 1222a switches between the retracted state and the limit state of being pushed out. Alternatively, the drive rod 1222b can also drive the push rod 1222a to stop at any position above the support platform 122. In this case, the drive rod 1222b can be controlled to stop moving when the push rod 1222a is sensed (for example, a sensor can be set to sense the state of the top of the push rod 1222a) and the push rod 1222a is in contact with the wafer 400, so that the push rod 1222a stays at the current position.

[0102] Because the push rod 1222a needs to have a certain extension height, it is necessary to ensure that the push rod 1222a itself has sufficient length. When the push rod 1222a is retracted into the support platform 122, the height space occupied by the push rod 1222a in the support platform 122 is relatively large; for example, the length of the push rod 1222a almost occupies the entire height space of the support platform 122. In practical applications, in order to ensure the temperature control effect of the temperature control disk 1221 on the wafer 400, the temperature control disk 1221 is usually close to the top surface of the support platform 122 (e.g., Figure 2 As shown, the push rod 1222a is configured such that it typically needs to pass through the temperature control plate 1221 and extend above the support platform 122. To address this, a through hole provided within the support platform 122 can penetrate the temperature control plate, allowing the push rod 1222a to extend upwards through the temperature control plate 1221.

[0103] Figure 5 for Figure 2 A structural diagram showing the top rod of the load-bearing transmission module in the ejected state. (Refer to...) Figure 5 As shown, regarding how the carrier platform 122 supports the wafer 400 transmitted from the processing module 300 to the carrier transmission module 100, combined with... Figure 1 and Figure 5 As shown, taking the second robotic arm 310 in the processing module 300 at the horizontal position indicated by the dashed line as an example, the second robotic arm 310 first transfers the wafer 400 into the transfer chamber 110 of the carrier transfer module 100. Then, the push rod 1222a in the carrier platform 122 is pushed out (the push rod 1222a extends above the carrier platform 122). The top of the push rod 1222a is supported on the bottom of the wafer 400. Then, the push rod 1222a gradually descends and retracts into the carrier platform 122, so that the wafer 400 falls onto the top surface supported on the carrier platform 122.

[0104] After the wafer 400 is supported on the top surface of the support stage 122, the temperature control disk 1221 is activated to control the temperature of the wafer 400, gradually reducing the temperature of the wafer 400 to room temperature. For example, a sensor may also be installed inside the support stage 122, electrically connected to the temperature control disk 1221. The sensor may be, for example, a photosensitive sensor or a pressure sensor. When the sensor detects the presence of the wafer 400 on the support stage 122, it activates the temperature control disk 1221.

[0105] In some embodiments, in addition to controlling the input and output power of the temperature control disk 1221 itself, controlling the temperature of the temperature control disk 1221, and adjusting the temperature of the wafer 400, the distance between the wafer 400 and the top surface of the support stage 122 can also be adjusted using the push rod 1222a, thereby changing the distance between the wafer and the temperature control disk 1221, and thus adjusting the temperature of the wafer 400. For example, the push rod 1222a can be controlled to extend a small section above the top surface of the support stage 122, lifting the wafer 400, increasing the distance between the wafer 400 and the temperature control disk 1221, and working together with the temperature control of the temperature control disk 1221 to adjust the temperature of the wafer 400.

[0106] In addition, in practical applications, the top surface of the support stage 122 may not be a completely flat surface. The top surface of the support stage 122 may have multiple raised support points. These multiple raised support points may be evenly spaced along the circumference of the support stage 122. The wafer 400 placed on the top surface of the support stage 122 is supported on the raised support points, so that there is a small contact area between the back side of the wafer 400 and the top surface of the support stage 122, so as to prevent the support stage 122 from contaminating the wafer 400.

[0107] Regarding the transition from a vacuum environment to an atmospheric environment in the transmission module 100, Figure 6 A timeline of environmental transitions in the bearer transmission module provided in this embodiment of the disclosure, with reference to Figure 6 As shown, after the wafer 400 is transferred to the carrier transmission module 100, the transmission chamber 110 maintains a vacuum environment for a short time. Then, with the opening of the first air inlet pipe 131 and the second air inlet pipe 132, the transmission chamber 110 gradually changes from a vacuum environment to an atmospheric environment. The atmospheric pressure gradually increases, and the temperature of the wafer 400 gradually decreases until the wafer 400 returns to room temperature.

[0108] Based on the transfer process of wafer 400 between loading module 200, carrier transmission module 100, and processing module 300, this embodiment also provides a wafer processing method. Figure 7 This is a flowchart of the wafer processing method provided in this embodiment, referring to... Figure 7 As shown, the processing method includes the following steps:

[0109] S100. The wafer to be processed is fed from the loading module into the support frame in the transfer chamber of the carrying transfer module.

[0110] Combination Figure 1 As shown, for the wafer to be processed, after the door plate between the loading module 200 and the carrier transmission module 100 moves to open the channel 113 between them, the first robotic arm 210 clamps the wafer 400 and passes it through the channel 11 between the loading module 200 and the carrier transmission module 100 into the transmission chamber 110, and places the wafer 400 on the support frame 123.

[0111] Subsequently, the door panel between the loading module 200 and the carrier transmission module 100 moves to close the passage 113 between them, and the transmission chamber 110 is sealed.

[0112] S200, the support frame moves up along the height direction of the transfer chamber until the wafer to be processed is located in the temporary storage area of ​​the transfer chamber.

[0113] Combination Figure 2 As shown, after the wafer to be processed is placed on the support frame 123, the motor 1211 inside the support column 121 drives the support column 121 to extend. The support column 121 drives the carrier platform 122 and the support frame 123 to move upward until the height of the support plate 1232 of the support frame 123 is within the temporary storage area 111, so that the wafer 400 is located within the temporary storage area 111.

[0114] S300 reduces the gas pressure inside the transfer chamber, changing the transfer chamber from an atmospheric environment to a vacuum environment.

[0115] After the wafer to be processed is located in the temporary storage area 111, the gas pressure in the transfer chamber 110 is reduced, so that the transfer chamber 110 gradually changes from an atmospheric environment to a vacuum environment, so that the environment in which the wafer 400 to be processed is located becomes a vacuum environment.

[0116] Specifically, the gas inside the transfer chamber 110 can be evacuated through the extraction pipe 140 installed inside the transfer chamber 110, thereby changing the atmospheric environment inside the transfer chamber 110 into a vacuum environment. For example, the gas inside the transfer chamber 110 may include nitrogen or other CDA (compressed dry air / clean dry air).

[0117] S400, the support frame moves down along the height direction of the transfer chamber until the wafer to be processed reaches the predetermined position.

[0118] After the environment inside the transfer chamber 110 is transformed into a vacuum environment, the motor 1211 inside the support column 121 drives the support column 121 to retract. The support column 121 then moves the carrier platform 122 and the support frame 123 downwards until the support plate 1232 of the support frame 123 reaches a predetermined height, thus moving the wafer 400 to be processed to the predetermined height. This predetermined height can be the height position of the second robotic arm 310, so that the second robotic arm 310 can grip the wafer 400.

[0119] S500: The wafer to be processed is transferred from the transfer chamber to the processing module for processing.

[0120] After the support frame 123 moves the wafer to be processed to the horizontal height of the second robotic arm 310, the door between the processing module 300 and the carrier transmission module 100 moves to open the channel 113 between them. The second robotic arm 310 moves horizontally into the transfer chamber 110 and clamps the wafer 400. The wafer 400 is then transferred into the processing module 300 for processing through the channel 11 between the processing module 300 and the carrier transmission module 100.

[0121] S600: The processed wafer is transferred from the processing module to a predetermined position within the transfer chamber.

[0122] For the processed wafer, after the door panel between the processing module 300 and the carrier transmission module 100 moves to open the channel 113 between them, the second robotic arm 310 clamps the wafer 400, moves horizontally, passes through the channel 11 between the processing module 300 and the carrier transmission module 100, and puts the wafer 400 into the transmission chamber 110, so that the wafer 400 is in a predetermined position.

[0123] S700: Place the processed wafer on a support platform located in the temperature-controlled zone of the transfer chamber.

[0124] Combination Figure 5 As shown, after the second robotic arm 310 clamps the processed wafer into the transfer chamber 110, the push rod 1222a inside the support platform 122 is pushed out, extending above the support platform 122 and supporting the bottom of the wafer 400. Then, the push rod 1222a gradually descends until it retracts into the support platform 122, thereby causing the wafer 400 to descend stably onto the top surface supported by the support platform 122.

[0125] At this time, the door panel between the processing module 300 and the carrier transmission module 100 moves to close the channel 113 between them, and the transmission chamber 110 is closed.

[0126] S800: Increase the gas pressure in the transfer chamber and gradually adjust the temperature of the processed wafer through the temperature control plate located in the carrier stage until the temperature of the processed wafer reaches room temperature.

[0127] After the processed wafer is stably supported on the top surface of the support stage 122, the gas pressure in the transfer chamber 110 is increased, changing the environment inside the transfer chamber 110 from a vacuum environment to an atmospheric environment. The gas entering the transfer chamber 110 acts on the wafer 400 located on the top surface of the support stage 122 to remove residual gas molecules on the surface of the wafer 400. At the same time, the temperature control disk 1221 located in the support stage 122 controls the temperature of the wafer 400 to gradually change to room temperature to avoid the condensation of by-products on the surface of the wafer 400.

[0128] Specifically, inert gas can be introduced into the transfer chamber 110 through the air inlet pipe 130 to remove residual gas on the surface of the wafer 400. During the introduction of inert gas, the stage 122 can be rotated. The wafer 400 on the stage 122 rotates synchronously with the stage 122. Different areas of the wafer 400 in the circumferential direction can be rotated to positions closest to the air inlet pipe 130 (such as the aforementioned second air inlet pipe 132). Each area on the surface of the wafer 400 can be subjected to strong gas pressure to remove residual gas molecules on the surface of the wafer 400 more quickly and thoroughly.

[0129] It should be understood that the terms “center,” “longitudinal,” “lateral,” “length,” “width,” “thickness,” “upper,” “lower,” “front,” “rear,” “left,” “right,” “vertical,” “horizontal,” “top,” “bottom,” “inner,” and “outer,” etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this disclosure.

[0130] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this disclosure, and are not intended to limit them. Although this disclosure has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this disclosure.

Claims

1. A transmission module, characterized in that, Includes a transfer chamber and a support seat disposed within the transfer chamber; The transfer chamber has a connected temporary storage area and a temperature control area, with the temporary storage area located above the temperature control area; The support base includes a support frame, a support platform, and a support column; the support frame is installed above the support platform and is used to support the wafer in the temporary storage area; the support platform is installed on top of the support column and is used to support the wafer in the temperature control area; the support column extends from the bottom into the transfer chamber and is used to control the movement of the support platform and the support frame along the height direction of the transfer chamber. The support platform is equipped with a temperature control plate, which is used to control the temperature of the wafer located on the support platform.

2. The bearer transmission module according to claim 1, characterized in that, The transfer chamber is equipped with an air extraction pipe and at least one air inlet pipe.

3. The bearer transmission module according to claim 2, characterized in that, The air intake pipe includes a first air intake pipe, which is located above the temporary storage area.

4. The bearer transmission module according to claim 3, characterized in that, The air intake pipe also includes a second air intake pipe, which is located below the temperature control zone.

5. The bearer transmission module according to claim 4, characterized in that, The second air inlet pipe and the first air inlet pipe are located on opposite sides of the transfer chamber, and the air outlet range of the second air inlet pipe and the air outlet range of the first air inlet pipe respectively cover both sides of the wafer.

6. The bearer transmission module according to any one of claims 1-5, characterized in that, A motor is installed inside the support column, and the motor is connected to the support platform, driving the support platform to rotate.

7. The bearer transmission module according to any one of claims 1-5, characterized in that, The support base is provided with an ejector assembly, which includes a plurality of spaced-apart push rods, which retract into the support platform or extend above the top surface of the support platform.

8. The bearer transmission module according to claim 7, characterized in that, The ejector assembly further includes a drive rod located inside the support column and movable along the axial direction of the support column, and the ejector rod is connected to the drive rod.

9. The bearer transmission module according to claim 8, characterized in that, The support platform is provided with a through hole penetrating the temperature control plate. The push rod moves up and down within the through hole, including: when rising, extending out of the through hole to be higher than the top surface of the support platform, and when descending, retracting into the through hole to be lower than the top surface of the support platform.

10. The bearer transmission module according to any one of claims 1-5, characterized in that, The support frame includes at least two sets of support parts, which are spaced apart circumferentially along the bearing platform. The area enclosed by the support parts is used to place the wafer, and different support parts are used to support different parts of the wafer.

11. The bearer transmission module according to claim 10, characterized in that, The support includes a mounting plate and a support plate; The bottom end of the mounting plate is connected to the side wall of the support platform, the top end of the mounting plate extends toward the top of the transfer chamber, the support plate is connected to the side surface of the mounting plate facing the center of the transfer chamber, and the wafer is attached to the surface of the support plate.

12. A semiconductor processing apparatus, characterized in that, Includes a loading module, a processing module, and a bearer transmission module as described in any one of claims 1-11; The loading module and the processing module are located at different positions around the carrying and transmission module. There are channels between the loading module and the carrying and transmission module, and between the processing module and the carrying and transmission module. The channels are equipped with openable and closable doors.

13. The semiconductor processing apparatus according to claim 12, characterized in that, The loading module is equipped with a first robotic arm, which can extend into the transmission chamber of the carrier transmission module. The processing module is equipped with a second robotic arm, which can extend into the transmission chamber of the carrying and transmission module.

14. A wafer processing method, applied to the semiconductor processing apparatus of claim 12 or 13, characterized in that, include: The wafer to be processed is fed from the loading module into the support frame in the transfer chamber of the carrier transfer module; The support frame moves up the height of the transfer chamber until the wafer to be processed is located in the temporary storage area of ​​the transfer chamber; Reduce the gas pressure inside the transfer chamber to change the transfer chamber from an atmospheric environment to a vacuum environment; The support frame moves downward along the height direction of the transfer chamber until the wafer to be processed reaches the predetermined position; The wafer to be processed is transferred from the transfer chamber to the processing module for processing. The processed wafer is transferred from the processing module to the predetermined position within the transfer chamber; The processed wafer is placed on a support platform located in the temperature-controlled area of ​​the transfer chamber; The gas pressure inside the transfer chamber is increased, and the temperature of the processed wafer is gradually adjusted by a temperature control plate located inside the support platform until the temperature of the processed wafer reaches room temperature.

15. The wafer processing method according to claim 14, characterized in that, The method of reducing the gas pressure in the transmission chamber includes: removing the gas in the transmission chamber through an extraction pipe installed in the transmission chamber; Increasing the gas pressure inside the transmission chamber includes: introducing gas into the transmission chamber through an air inlet pipe provided inside the transmission chamber.

16. The wafer processing method according to claim 14, characterized in that, After placing the processed wafer on the support stage, the process includes: The carrier stage is controlled to rotate, thereby driving the processed wafer located on the carrier stage to rotate synchronously.

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