Image sensing device

Abstract

The present application relates to an image sensor, comprising a photoelectric conversion layer, a plurality of deep trench isolations, a first color filter, a deflector and a cover layer. The photoelectric conversion layer comprises a first photodiode and a second photodiode. The deep trench isolations separate the first photodiode and the second photodiode, wherein the distance between two adjacent deep trench isolations defines a pixel size. The first color filter is disposed on the first photodiode and the second photodiode. The deflector is disposed on the first color filter. The cover layer covers and surrounds the deflector. The refractive index of the cover layer is greater than the refractive index of the deflector, and the difference between the refractive index of the cover layer and the refractive index of the deflector is between 0.15 and 0.6. The phase adjuster comprising the deflector and the cover layer can uniformly distribute external light to the photodiode below the phase adjuster, so that the photodiode can detect light of uniform intensity, thereby avoiding the problem of channel imbalance and improving the efficiency of the image sensor.

Description

Technical Field

[0001] This invention relates to an image sensing device, and more particularly to a deflector in an image sensing device. Background Technology

[0002] In the field of complementary metal-oxide-semiconductor (CMOS) image sensors (also known as CIS), an image sensor may include a lens layer, a color filter layer, and multiple photodiodes. The lens layer is configured to receive external light, and the photodiodes are configured to detect this external light, wherein each photodiode can be separated by multiple deep trench isolation (DTI). However, when the lens layer is misaligned with the color filter layer and / or the photodiodes, the presence of DTI may lead to an unbalanced energy distribution of the external light. Therefore, it is necessary to solve the aforementioned light-spot misalignment problem. Summary of the Invention

[0003] One aspect of the present invention is to provide an image sensing device. The image sensing device includes a photoelectric conversion layer, a plurality of deep trench isolations, a first color filter, a first deflector, and a capping layer. The photoelectric conversion layer includes a first photodiode and a second photodiode. The deep trench isolations separate the first photodiode and the second photodiode, wherein the distance between two adjacent deep trench isolations defines a pixel size. The first color filter is disposed on the first photodiode and the second photodiode. The first deflector is disposed on the first color filter. The capping layer covers and surrounds the first deflector. The refractive index of the capping layer is greater than the refractive index of the first deflector, and the difference between the refractive index of the capping layer and the refractive index of the first deflector is between 0.15 and 0.6.

[0004] In some implementations, the ratio of the top width of the first deflector to the bottom width of the first deflector is between 1 / 4 and 1.

[0005] In some implementations, the ratio of the bottom width or bottom length of the first deflector to the pixel size is between 1 and 1.8, and the bottom width of the first deflector is the same as the bottom length of the first deflector.

[0006] In some implementations, the gap between the sidewall of the first color filter and the sidewall of the bottom of the first deflector is between 0.1 and 0.5 pixel dimensions.

[0007] In some embodiments, the image sensing device further includes a third photodiode, a fourth photodiode, a second color filter, and a second deflector. The third and fourth photodiodes are located in a photoelectric conversion layer, wherein deep trenches isolate and separate the third and fourth photodiodes. The second color filter is disposed on the third and fourth photodiodes. The second deflector is disposed on the second color filter. The second deflector is spaced apart from a first deflector, both of which extend along a first direction and are arranged along a second direction perpendicular to the first direction. A capping layer covers and surrounds the second deflector.

[0008] In some implementations, the ratio of the bottom width or bottom length of the first deflector to the pixel size is between 1 and 1.8, and the ratio of the bottom width or bottom length of the second deflector to the pixel size is between 1 and 1.8.

[0009] In some implementations, the difference between the bottom width and the bottom length of the first deflector is between 0.1 and 0.5 pixels.

[0010] In some embodiments, the first gap between the sidewall of the first color filter and the sidewall of the bottom of the first deflector is the same as the second gap between the sidewall of the second color filter and the sidewall of the bottom of the second deflector, wherein the first gap is less than 0.4 pixel size.

[0011] In some implementations, the first height of the first deflector is between 150 nm and 800 nm, the second height of the second deflector is between 150 nm and 800 nm, and the first height is different from the second height.

[0012] In some embodiments, the image sensing device further includes a fifth photodiode, a sixth photodiode, a third color filter, and a third deflector. The fifth and sixth photodiodes are located in a photoelectric conversion layer, wherein deep trenches isolate and separate the fifth and sixth photodiodes. The third color filter is disposed on the fifth and sixth photodiodes. The third deflector is disposed on the third color filter. The third deflector is spaced apart from the first and second deflectors, and extends along a first direction and is arranged along a second direction. A capping layer covers and surrounds the third deflector.

[0013] In some implementations, the bottom width of the first deflector is the same as the bottom width of the second deflector, and the bottom length of the first deflector is the same as the bottom length of the third deflector.

[0014] In some implementations, the bottom width of the first deflector is the same as the bottom width of the third deflector, and the bottom length of the first deflector is the same as the bottom length of the second deflector.

[0015] In some embodiments, the image sensing device further includes a fifth photodiode, a sixth photodiode, and a third color filter. A deep trench isolates and separates the fifth and sixth photodiodes. The third color filter is disposed on the fifth and sixth photodiodes. The third color filter does not have a first deflector and a second deflector.

[0016] In some embodiments, the bottom width of the first deflector is the same as the bottom length of the first deflector. The first deflector is positioned above the junction of the first color filter and the second color filter.

[0017] In some implementations, the axis of symmetry of the deep trench isolation beneath the first color filter is misaligned with the axis of symmetry of the first deflector. The axis of symmetry of the deep trench isolation beneath the second color filter is also misaligned with the axis of symmetry of the second deflector. The difference between the offset of the axis of symmetry of the first deflector relative to the axis of symmetry of the deep trench isolation beneath the first color filter and the offset of the axis of symmetry of the second deflector relative to the axis of symmetry of the deep trench isolation beneath the second color filter is between 0 and 0.5 pixel dimensions.

[0018] In some embodiments, the image sensing device further includes a lens layer disposed on the cover layer.

[0019] In some implementations, the first deflector extends continuously from the bottom surface of the cover layer to the top surface of the first color filter to cover and surround the first color filter.

[0020] In some embodiments, the image sensing device further includes a first lens disposed above the first deflector. The axis of symmetry of the deep trench isolation below the first color filter, the axis of symmetry of the first deflector, and the axis of symmetry of the cover layer are misaligned with each other. The offset of the axis of symmetry of the first deflector relative to the axis of symmetry isolated by the deep trench below the first color filter is less than the offset of the axis of symmetry of the first lens relative to the axis of symmetry isolated by the deep trench below the first color filter.

[0021] In some implementations, the difference between the offset of the axis of symmetry of the first deflector and the offset of the axis of symmetry of the first lens is between 0.1 and 0.8 of that pixel size.

[0022] In some embodiments, the image sensing device further includes a buffer layer disposed between the first color filter and the first deflector. The refractive index of the first deflector is greater than the refractive index of the buffer layer, and the refractive index of the buffer layer is greater than the refractive index of the first color filter. Attached Figure Description

[0023] The various aspects of the invention can be best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be understood that, in accordance with standard industry practice, the various features are not drawn to scale. In fact, for clarity, the dimensions of the various features can be arbitrarily increased or decreased.

[0024] Figure 1 This is a cross-sectional schematic diagram of an image sensing device according to a comparative embodiment of the present invention.

[0025] Figure 2 for Figure 1 A partial top view.

[0026] Figure 3 This is a cross-sectional schematic diagram of an image sensing device according to some embodiments of the present invention.

[0027] Figures 4 to 7 for Figure 3 Top view of different embodiments of the image sensing device.

[0028] Figure 8 This is a cross-sectional schematic diagram of an image sensing device according to an embodiment of the present invention.

[0029] Figure 9 for Figure 8 A top view of the image sensing device.

[0030] Figure 10 for Figure 3 A partial view of the image sensing device.

[0031] Figure 11 This is a top view of an image sensing device according to an embodiment of the present invention.

[0032] Figure 12 This is a top view of an image sensing device according to another embodiment of the present invention.

[0033] Figure 13 This is a cross-sectional schematic diagram of an image sensing device according to an embodiment of the present invention.

[0034] Figure 14 for Figure 13 A top view of the image sensing device.

[0035] Figures 15 to 17 This is a cross-sectional schematic diagram of an image sensing device according to some embodiments of the present invention.

[0036] Figure 18 for Figure 17 A top view of the image sensing device.

[0037] Figure 19This is a cross-sectional schematic diagram of an image sensing device according to some embodiments of the present invention.

[0038] Figure 20 This is a cross-sectional schematic diagram of an image sensing device according to some embodiments of the present invention.

[0039] Figure 21 and Figure 22 for Figure 20 Top view of different embodiments of the image sensing device.

[0040] The reference numerals in the attached figures are explained as follows:

[0041] 100: Image sensing device; 110: Photoelectric conversion layer; 112: Photodiode (PD); 120: Deep trench isolation (DTI); 130: Color filter layer; 132, 134: Color filters; 140: Lens layer; 142, 144: Lenses; 300, 300A: Image sensing device; 310: Photoelectric conversion layer; 312, 312a, 312b, 312c, 312d: Photodiode (PD); 320: Deep trench isolation (DTI); 330: Color filter layer; 332, 334, 336, 338: Color filters; 340: Phase adjuster; 342, 344: Deflectors; 346: Cover layer; 350: Lens layer; 352, 354: Lenses; 360: Buffer layer; 370: Oxide grid; 372: Metal grid; 800: Image sensor; 812, 812a, 812b, 812c, 812d, 812e, 812f: Photodiode (PD); 820: Deep trench isolation (DTI); 830: Color filter layer; 832, 834: Color filters; 840: Phase adjuster; 841, 842, 843, 844: Deflectors; 845: Cover layer; 850: Lens layer; 852, 854: Lenses; 1100: Image sensor; 1112: Photodiode (PD); 1132, 1134, 1136, 1138: Color filters; 1142, 1144, 1146, 114 8: Deflector; 1200: Image sensor; 1232, 1234, 1236, 1238: Color filters; 1242, 1244, 1246, 1248: Deflectors; 1300: Image sensor; 1310: Photoelectric conversion layer; 1312a, 1312b, 1312c, 1312d: Photodiodes (PDs); 1320: Deep trench isolation (DTI); 1330: Color filter layer; 1332, 1334: Color filters; 1340: Phase adjuster; 1342, 1344: Deflectors; 1350: Lens layer; 1352, 1354: Lenses; 1600: Image sensor; 1630: Color filter layer; 1632, 1634: Color... Color filters; 1632s, 1634s: top surface; 1642, 1644: deflectors; 1646: capping layer; 1646s: bottom surface; 1700: image sensor; 1732, 1734: color filters; 1900: image sensor; 1942: deflector; 2000, 2000A, 2000B: image sensor; 2010: photoelectric conversion layer; 2012, 2012a, 2012b, 2012c, 2012d: photodiodes (PDs); 2020: deep trench isolation (DTI); 2030: color filter layer; 2032, 2034: color filters; 2040: phase modulator; 2041, 2042, 2043: deflectors;2050: Lens layer; A-A', B-B', C-C', D-D', E-E', F-F', G-G': Profile lines; A1, A2, A3, A4, A5: Axis of symmetry; BL: Bottom length; BW: Bottom width; D1: First direction; D2: Second direction; G1, G2, G3: Gap; H1, H2: Height; L: Light; LS: Light spot; O1, O2, O3: Offset; P: Pixel size; R: Groove; W1: Top width; W2: Bottom width. Detailed Implementation

[0042] The following discloses many different implementations or embodiments for achieving various features of the invention. Specific embodiments of components and arrangements are described below to simplify the invention. These are, of course, merely embodiments and are not intended to be limiting. For example, in the following description, the formation of a first feature above or on a second feature may include an embodiment where the first and second features are formed in direct contact, or an embodiment where another feature may be formed between the first and second features so that the first and second features are not in direct contact. Furthermore, reference numerals or words may be repeated in different instances of the invention. The purpose of repetition is to simplify and clarify the description, not to define the relationships between the different embodiments and configurations discussed.

[0043] It will be understood that although terms such as “first,” “second,” etc., may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used only to distinguish one element from another. For example, without departing from the scope of the embodiments, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items.

[0044] In addition, spatial relative terms such as "below," "below," "lower than," "above," and other similar terms are used here for the convenience of describing the relationship between one element or feature and another element or feature in the figure. Spatial relative terms cover not only the orientation depicted in the figure, but also other orientations of the device during use or operation. The device may be oriented in other orientations (rotated 90 degrees or in other orientations), and the spatial relative descriptions used herein can be interpreted accordingly.

[0045] Figure 1 This is a cross-sectional schematic diagram of an image sensing device 100 according to a comparative embodiment of the present invention. Figure 1As shown, the image sensing device 100 includes a photoelectric conversion layer 110, multiple deep trench isolation (DTI) layers 120, a color filter layer 130, and a lens layer 140. The photoelectric conversion layer 110 includes multiple photodiodes (PDs) 112, and each PD 112 is separated by the DTI 120. The color filter layer 130 includes color filters 132 and 134. One color filter (such as color filter 132 or color filter 134) corresponds to at least two PDs 112, such as... Figure 1 As shown. Lens layer 140 includes lens 142 and lens 144. Lens layer 140 is misaligned with color filter layer 130 and PD 112. Specifically, the axis of symmetry of lens 142 is not aligned with the axis of symmetry of color filter 132 or the axis of symmetry of DTI 120 located below and in the middle of color filter 132.

[0046] Figure 2 for Figure 1 This is a partial top view, where some components are not shown for clarity. Please refer to... Figure 1 and Figure 2 When external light L propagates to PD 112 through lens 142 and color filter 132, the light spot LS shifts due to the misalignment of lens 142 and color filter 132. This results in each PD 112 below color filter 132 receiving external light L with a different energy distribution. More specifically, as... Figure 2 As shown, since the light spot LS is not at the center of the four PD112, therefore Figure 2 Each PD 112 in the circuit receives external light L with a different energy distribution. The aforementioned spot offset problem can be called "channel imbalance".

[0047] This invention provides various image sensing devices incorporating phase modulators. The configuration of the phase modulator can uniformly distribute external light to the photodiode below the phase modulator, enabling the photodiode to detect light of uniform intensity, thereby avoiding channel imbalance problems and improving the performance of the image sensing device.

[0048] Figure 3This is a cross-sectional schematic diagram of an image sensing device 300 according to some embodiments of the present invention. The image sensing device 300 includes a photoelectric conversion layer 310, a plurality of digital photodetectors (DTIs) 320, a color filter layer 330, a phase adjuster 340, and a lens layer 350. The photoelectric conversion layer 310 includes a plurality of photodetectors 312 (including PDs 312a, PDs 312b, PDs 312c, and PDs 312d), and each PD 312a to 312d is separated by a DTI 320. The color filter layer 330 includes a color filter 332 and a color filter 334. The color filter 332 is disposed on PDs 312a and PDs 312b, and the color filter 334 is disposed on PDs 312c and PDs 312d. The phase adjuster 340 includes a deflector 342, a deflector 344, and a cover layer 346. The lens layer 350 is disposed on the cover layer 346. A cover layer 346 covers and surrounds deflectors 342 and 344. Deflector 342 is disposed on color filter 332, and deflector 344 is disposed on color filter 334. Deflectors 342 and 344 are spaced apart. Both deflectors 342 and 344 extend along a first direction D1 and are arranged along a second direction D2 perpendicular to the first direction D1. Lens layer 350 includes lenses 352 and 354. Lens layer 350 is disposed on phase adjuster 340. Specifically, deflectors 342 and 344 are disposed between color filter layer 330 and lens layer 350. Image sensing device 300 also includes oxide grid 370 and metal grid 372 in oxide grid 370. Oxide grid 370 and metal grid 372 are configured to prevent light propagation through different color filters, thereby reducing optical crosstalk.

[0049] Still refer to Figure 3 In some embodiments, a buffer layer 360 is disposed between the color filter layer 330 and the phase adjuster 340. In some embodiments, the refractive index of the deflector 342 is greater than the refractive index of the buffer layer 360, and the refractive index of the buffer layer 360 is greater than the refractive index of the color filter layer 330. In some embodiments, the material of the cover layer 346 is the same as the material of the lens layer 350. In some embodiments, the refractive index of the cover layer 346 is greater than the refractive index of the deflector 342. In some embodiments, the difference value between the refractive index of the cover layer 346 and the refractive index of the deflector 342 is between 0.15 and 0.6, such as 0.2, 0.25, 0.3, 0.35, 0.4, 0.45, 0.5, or 0.55.

[0050] Phase modulator 340 (including deflectors 342 and 344, and a cladding layer 346) is configured to uniformly distribute external light L. Specifically, because the refractive index of the cladding layer 346 differs from that of the deflector 342, the propagation speed of light L differs between the cladding layer 346 and the deflector 342, resulting in a phase difference. This phase difference causes optical interference, which then forms multiple light spots of similar intensity, such as... Figure 3 As shown. Therefore, PDs 312a to 312d located below the color filter layer 330 can detect light L of uniform intensity. In other words, by setting a phase modulator 340 containing different elements with different refractive indices, the effect can be improved. Figure 1 and Figure 2 The channel imbalance problem described above can be solved by calculating the phase difference (δ) using the following equation:

[0051]

[0052] Where d is (for example) Figure 10 The height H1 shown is the height of deflector 342, λ is the wavelength of external light L, and n is the wavelength of external light L. m n is the refractive index of the capping layer 346, and n0 is the refractive index of the deflector 342.

[0053] If the difference between the refractive index of the capping layer 346 and the refractive index of the deflector 342 is less than 0.15, there may not be enough phase difference to cause optical interference, and thus multiple light spots of similar intensity cannot be formed. If the difference between the refractive index of the capping layer 346 and the refractive index of the deflector 342 is greater than 0.6, there will be no positive impact on the performance of the image sensing device 300.

[0054] Please refer to this again. Figure 3 Color filters 332 and 334 can be red, green, blue, white, yellow, cyan, magenta, or other color filters, respectively. In some embodiments, color filter 332 may be different from color filter 334, such as... Figure 3 As shown. In other embodiments, color filter 332 may be the same as color filter 334. The size of each deflector between different color filters can be adjusted according to actual design and / or process requirements. Color filter layer 330 may include GRB filters, GRBC filters, RYYB filters, CMY filters, or other combinations of filters. Figure 3 As shown, the pixel dimension P in this invention is defined by the distance between two adjacent DTI 320s. The pixel dimension P can be understood as the pixel dimension in width or the pixel dimension in length.

[0055] Figures 4 to 7 for Figure 3 A top view of different embodiments of the image sensing device 300. Specifically, along... Figure 4 The view captured by the cross section line A-A' of the image sensing device 300A can be Figure 3 The image sensing device 300. Along Figure 5 The view captured by the cross section line B-B' of the image sensing device 300B can be Figure 3 The image sensing device 300 is shown. Along... Figure 6 The view captured by the cross section C-C' of the image sensing device 300C can be Figure 3 The image sensing device 300 is shown. Along... Figure 7 The view captured by the cross section line D-D' of the image sensing device 300D can be Figure 3 The image sensing device 300 shown.

[0056] Figure 3 The image sensing device 300 can be used for applications such as (2n). 2 C architecture (such as 4C, 16C, or 36C), (2n-1) 2 C-architecture (such as 9C or 25C) and dual-PD (DPD) architectures, where n is a positive integer. It's understandable that in this article, "C" represents the number of PDs corresponding to one color filter. In detail, Figure 4 It uses a 4C architecture, where one color filter (such as color filters 332, 334, 336, 338) corresponds to four PDs 312. Figure 5 It is a dual PD (DPD) architecture, where one color filter (such as color filter 332, 334, 336, 338) corresponds to two PDs 312. Figure 6 It is a 16C architecture, where one color filter (such as color filters 332, 334, 336, 338) corresponds to 16 PD 312. Figure 7 It uses a 16C architecture, where one color filter (such as color filters 332, 334, 336, 338) corresponds to 16 PDs 312. Figure 4 , Figure 6 as well as Figure 7 In this configuration, deflector 342 and lens 352 correspond to four PDs 312, and deflector 344 and lens 354 also correspond to four PDs 312. Figure 5 In the middle, deflector 342 and lens 352 correspond to 2 PD 312, and deflector 344 and lens 354 also correspond to 2 PD 312.

[0057] Figure 4 Image sensing device 300A, Figure 5Image sensing device 300B, Figure 6 Image sensing device 300C and Figure 7 The image sensing device 300D includes color filters 332, 334, 336, and 338. Each of the color filters 332, 334, 336, and 338 can be a red, green, blue, white, yellow, cyan, magenta, or other color filter. In some embodiments, color filters 332, 334, 336, and 338 can be different color filters from each other. In some embodiments, color filter 332 can be the same as color filter 338, such as... Figures 4 to 7 As shown. It is understood that the size of each deflector between different color filters can be adjusted according to actual design and / or process requirements. For example, the size of deflector 342 on color filter 332 is smaller than the size of deflector 344 on color filter 334. The size of deflector 342 on color filter 332 is larger than the size of the deflector on color filter 336. The size of deflector 342 on color filter 332 is different from the size of the deflector on color filter 338. In some embodiments, such as Figure 7 As shown, each deflector is diamond-shaped.

[0058] Figure 8 This is a cross-sectional schematic diagram of an image sensing device 800 according to an embodiment of the present invention. Figure 8 Image sensing device 800 and Figure 3 The image sensing device 300 differs in the number of deflectors, PDs, and DTIs, where the size of each deflector between different color filters can be adjusted according to actual design and / or process requirements. Specifically, multiple PDs 812 (including PDs 812a to 812f) and each of PDs 812a to 812f is separated by a DTI 820. Figure 8 From the cross-sectional schematic diagram, the color filter 832 of the color filter layer 830 corresponds to three PDs (i.e., PDs 812a to 812c), and the color filter 834 of the color filter layer 830 also corresponds to three PDs (i.e., PDs 812d to 812f). Figure 8From the cross-sectional schematic diagram, the phase adjuster 840 is disposed between the color filter layer 830 and the lens layer 850. Color filter 832 corresponds to two deflectors (i.e., deflectors 841 and 842), and color filter 834 also corresponds to two deflectors (i.e., deflectors 843 and 844). Deflectors 843 and 844 are spaced apart from deflectors 841 and 842. Deflectors 843 and 844 extend along a first direction D1 and are arranged along a second direction D2. Deflectors 841 to 844 are covered and surrounded by a cover layer 845. Lens 852 corresponds to deflectors 841 and 842, and lens 854 corresponds to deflectors 843 and 844.

[0059] Figure 9 for Figure 8 A top view of the image sensing device 800, where some components are not shown for clarity. Along Figure 9 The view captured by the cross section line E-E' of the image sensing device 800 is Figure 8 The cross-sectional schematic diagram shown. Figure 8 and Figure 9 The image sensing device 800 has a 9C architecture, where one color filter (e.g., color filters 832, 834) corresponds to nine PDs 812. Each of the deflectors 841 to 844 corresponds to four PDs 812.

[0060] Figure 10 for Figure 3 A partial view of the image sensing device 300, wherein some elements are not shown for clarity. In some embodiments, the ratio of the top width W1 of the deflector 342 to the bottom width W2 of the deflector 342 is between 1 / 4 and 1, such as 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, or 0.9. If this ratio is less than 1 / 4 or greater than 1, the external light L may not have a uniform distribution within the image sensing device 300. In some embodiments, the first height H1 of the deflector 342 is between 150 nm and 800 nm. In some embodiments, the second height H2 of the deflector 344 is between 150 nm and 800 nm. In some embodiments, the first height H1 is the same as the second height H2. In some embodiments, the first height H1 is different from the second height H2. If the first height H1 and / or the second height H2 is less than 150 nm or greater than 800 nm, the external light L may not have a uniform distribution within the image sensing device 300. Understandably, the number and size of the deflectors (such as top width W1, bottom width W2, first height H1, and second height H2) can be adjusted according to actual needs to achieve uniform distribution of light L across multiple PDs.

[0061] Identical or similar features are indicated by identical or similar element symbols, and descriptions of similar features are not repeated in the following figures.

[0062] Figure 11 This is a top view of an image sensing device 1100 according to an embodiment of the present invention. The image sensing device 1100 includes a plurality of color filters (including color filters 1132, 1134, 1136, 1138), a plurality of deflectors disposed on the color filters (including deflectors 1142, 1144, 1146, 1148), and a plurality of PDs 1112 located below the color filters 1132, 1134, 1136, 1138. Each deflector 1142 has a bottom width BW and a bottom length BL. Each PD 1112 has a pixel size P (pixel size in width or pixel size in length). In some embodiments, the ratio of the bottom width BW or bottom length BL of the deflector 1142 to the pixel size P is between 1 and 1.8. In some embodiments, the bottom width BW of the deflector 1142 is the same as the bottom length BL of the deflector 1142. In some embodiments, the gap G1 between the sidewall of the color filter 1132 and the bottom sidewall of the deflector 1142 is between 0.1 and 0.5 pixel dimensions P. It should be understood that the upper... Figure 11 The range described herein can also be applied to the gap between the bottom sidewalls of deflectors 1144, 1146, 1148 and the sidewalls of color filters 1134, 1136, 1138.

[0063] Figure 12This is a top view of an image sensing device 1200 according to another embodiment of the present invention. The image sensing device 1200 includes a plurality of color filters (including color filters 1232, 1234, 1236, 1238), a plurality of deflectors disposed on the color filters (including deflectors 1242, 1244, 1246, 1248), and a plurality of PDs 1212 located below the color filters 1232, 1234, 1236, 1238. Each deflector 1242 has a bottom width BW and a bottom length BL. Each PD 1212 has a pixel size P (pixel size in width or pixel size in length). In some embodiments, the ratio of the bottom width BW or bottom length BL of the deflector 1242 to the pixel size P is between 1 and 1.8. In some embodiments, the bottom width BW of the deflector 1242 is different from the bottom length BL of the deflector 1242. In some embodiments, the difference between the bottom width BW and the bottom length BL of deflector 1242 is between 0.1 and 0.5 pixel dimensions P. In some embodiments, the gap G2 between the sidewall of color filter 1232 and the bottom sidewall of deflector 1242 is the same as the gap G3 between the sidewall of color filter 1234 and the bottom sidewall of deflector 1244, wherein gap G2 is less than 0.4 pixel dimensions P. It should be understood that the above... Figure 12 The range described herein can also be applied to the gap between the bottom sidewalls of deflectors 1244, 1246, 1248 and the sidewalls of color filters 1234, 1236, 1238.

[0064] Still refer to Figure 12 In some embodiments, the bottom width BW of deflector 1242 is the same as the bottom width BW of deflector 1244, and the bottom length BL of deflector 1242 is the same as the bottom length BL of deflector 1246. In other embodiments, the bottom width BW of deflector 1242 is the same as the bottom width BW of deflector 1246, and the bottom length BL of deflector 1242 is the same as the bottom length BL of deflector 1244.

[0065] Figure 13 This is a schematic cross-sectional view of an image sensing device 1300 according to an embodiment of the present invention. The image sensing device 1300 includes a photoelectric conversion layer 1310, a plurality of photodetectors 1312a to 1312d located in the photoelectric conversion layer 1310, and a lens layer 1350. Each photodetector 1312a to 1312d is separated by a digital photodetector lens (DTI) 1320. The lens layer 1350 includes lenses 1352 and 1354. Figure 14 for Figure 13 A top view of the image sensing device 1300. Figure 13 Image sensing device 1300 and Figure 3 The difference in the image sensing device 300 lies in the relative positions of the phase adjusters 340 and 1340, and the lens layers 350 and 1350. Specifically, in Figure 13 In this embodiment, the axis of symmetry A1 of the DTI 1320 located below the center of the color filter 1332 in the color filter layer 1330 is misaligned with the axis of symmetry A2 of the deflector 1342, and the axis of symmetry A2 of the deflector 1342 is misaligned with the axis of symmetry A3 of the lens 1352. In some embodiments, two of the axes of symmetry A1, A2, and A3 are misaligned (not aligned). In some embodiments, all the axes of symmetry A1, A2, and A3 are misaligned, such as... Figure 13 As shown.

[0066] Still refer to Figure 13 In some embodiments, the offset O1 of the axis of symmetry A2 (relative to axis of symmetry A1) of the deflector 1342 is less than the offset O2 of the axis of symmetry A3 (relative to axis of symmetry A1) of the lens 1352. In some embodiments, the difference between the offset O1 of the axis of symmetry A2 (relative to axis of symmetry A1) of the deflector 1342 and the offset O2 of the axis of symmetry A3 (relative to axis of symmetry A1) of the lens 1352 is between 0.1 and 0.8 pixel dimensions P. Figure 13 As shown, the axis of symmetry A5 of deflector 1344 is misaligned with the axis of symmetry A4 of DTI 1320 located below the center of color filter 1334. In some embodiments, the difference between the offset O1 of axis of symmetry A2 (relative to axis of symmetry A1) of deflector 1342 and the offset O3 of axis of symmetry A5 (relative to axis of symmetry A4) of deflector 1344 is between 0 and 0.5 pixel size P.

[0067] Figure 15 and Figure 16 This is a cross-sectional schematic diagram of an image sensing device 1500, 1600 according to some embodiments of the present invention. Figure 15 Image sensing device 1500 and Figure 10 The difference in the image sensing device 300 lies in the height of the deflector. Specifically, as... Figure 15 As shown, the height H1 of deflector 1542 is different from the height H2 of deflector 1544. More specifically, height H1 is greater than height H2. Figure 16 Image sensing device 1600 and Figure 10 The difference in the image sensing device 300 lies in the buffer layer 360 and the color filter layer 1630. Specifically, Figure 16No buffer layer is provided between the color filter layer 1630 and deflectors 1642 and 1644. In other words, deflector 1642 extends continuously from the bottom surface 1646s of the cover layer 1646 to the top surface 1632s of the color filter 1632, covering and surrounding the color filter 1632. Similarly, deflector 1644 extends continuously from the bottom surface 1646s of the cover layer 1646 to the top surface 1634s of the color filter 1634, covering and surrounding the color filter 1634.

[0068] Figure 17 This is a cross-sectional schematic diagram of an image sensing device 1700 according to some embodiments of the present invention. Figure 18 for Figure 17 A top view of the image sensing device 1700. Figure 17 Image sensing device 1700 and Figure 10 The difference in the image sensing device 300 lies in the deflector above the color filters 334 and 1734. Specifically, Figure 17 There are no deflectors above the color filter 1734 in the image. In other words, as... Figure 18 As shown, deflector 1742 corresponds to multiple PDs 1712 below color filter 1732, while no deflector corresponds to PD 1712 below color filter 1734.

[0069] Figure 19 This is a cross-sectional schematic diagram of an image sensing device 1900 according to some embodiments of the present invention. Figure 19 Image sensing device 1900 and Figure 10 The difference in the image sensing device 300 lies in the top width W1 and bottom width W2 of the deflectors 342 and 1942. For example... Figure 19 As shown, the top width W1 of the deflector 1942 is the same as the bottom width W2 of the deflector 1942.

[0070] Figure 20 This is a cross-sectional schematic diagram of an image sensing device 2000 according to some embodiments of the present invention. Figure 21 and Figure 22 for Figure 20 Top views of different embodiments of the image sensing device 2000. Specifically, along... Figure 21 The view captured by the cross section F-F' of the image sensing device 2000A can be Figure 20 The image sensing device 2000 is shown. Along... Figure 22 The view captured by the cross section line G-G' of the image sensing device 2000B can be Figure 20 The image sensing device 2000 shown.

[0071] like Figure 20As shown, the image sensing device 2000 has a photoelectric conversion layer 2010, a plurality of PDs 2012 (including PDs 2012a, PDs 2012b, PDs 2012c, and PDs 2012d) located in the photoelectric conversion layer 2010, and each PD 2012a to 2012d is separated by a DTI 2020. A phase adjuster 2040 is disposed between a color filter layer 2030 and a lens layer 2050. The phase adjuster 2040 includes a plurality of deflectors 2041 to 2043, and each of the deflectors 2041 to 2043 is separated by a groove R. A cover layer 2046 covers and surrounds the deflectors 2041 to 2043. The top width W1 of the deflector 2042 is the same as the bottom width W2 of the deflector 2042. Figure 21 and Figure 22 As shown, the deflector 2042 is positioned above the junction of the color filter 2032 and the color filter 2034. In other words, the deflector 2042 spans across the color filter 2032 and the color filter 2034.

[0072] This invention provides various image sensing devices incorporating phase modulators. The phase modulator includes a deflector and a cover layer that covers and surrounds the deflector, wherein the deflector and the cover layer have different refractive indices. The configuration of the phase modulator can uniformly distribute external light to a photodiode below the phase modulator, enabling the photodiode to detect light of uniform intensity, thereby avoiding channel imbalance problems and improving the performance of the image sensing device.

[0073] The above description is only a preferred embodiment of the present invention, but it is not intended to limit the scope of the present invention. Any person skilled in the art can make further improvements and changes on this basis without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the scope defined in the claims of this application.

Claims

1. An image sensing device, characterized in that, include: The photoelectric conversion layer includes a first photodiode and a second photodiode; Multiple deep trench isolations separate the first photodiode and the second photodiode, wherein the distance between two adjacent deep trench isolations defines the pixel size; A first color filter is disposed on the first photodiode and the second photodiode; A first deflector is disposed on the first color filter; as well as A capping layer covers and surrounds the first deflector, wherein the refractive index of the capping layer is greater than the refractive index of the first deflector, the difference between the refractive index of the capping layer and the refractive index of the first deflector is between 0.15 and 0.6, and the ratio of the bottom width or bottom length of the first deflector to the pixel size is between 1 and 1.

8.

2. The image sensing device according to claim 1, characterized in that, The ratio of the top width to the bottom width of the first deflector is between 1 / 4 and 1. The bottom width of the first deflector is the same as the bottom length of the first deflector. The gap between the sidewall of the first color filter and the bottom sidewall of the first deflector is between 0.1 and 0.5 pixels in size.

3. The image sensing device according to claim 1, characterized in that, Also includes: A third photodiode and a fourth photodiode are located in the photoelectric conversion layer, wherein the plurality of deep trenches isolate and separate the third photodiode and the fourth photodiode; A second color filter is disposed on the third photodiode and the fourth photodiode; as well as A second deflector is disposed on the second color filter, wherein the second deflector is spaced apart from the first deflector, both the first and second deflectors extend along a first direction and are arranged along a second direction perpendicular to the first direction, wherein the cover layer covers and surrounds the second deflector.

4. The image sensing device according to claim 3, characterized in that, The ratio of the bottom width or bottom length of the second deflector to the pixel size is between 1 and 1.

8. The difference between the bottom width and the bottom length of the first deflector is between 0.1 and 0.5 pixels.

5. The image sensing device according to claim 3, characterized in that, The first gap between the sidewall of the first color filter and the bottom sidewall of the first deflector is the same as the second gap between the sidewall of the second color filter and the bottom sidewall of the second deflector, wherein the first gap is less than 0.4 pixels. The first height of the first deflector is between 150 nm and 800 nm, the second height of the second deflector is between 150 nm and 800 nm, and the first height is different from the second height.

6. The image sensing device according to claim 3, characterized in that, Also includes: A fifth photodiode and a sixth photodiode are located in the photoelectric conversion layer, wherein the plurality of deep trenches isolate and separate the fifth photodiode and the sixth photodiode; A third color filter is disposed on the fifth photodiode and the sixth photodiode; as well as A third deflector is disposed on the third color filter, wherein the third deflector is spaced apart from the first deflector and the second deflector, the third deflector extends along the first direction and is arranged along the second direction, wherein the cover layer covers and surrounds the third deflector.

7. The image sensing device according to claim 6, characterized in that, The bottom width of the first deflector is the same as the bottom width of the second deflector, and the bottom length of the first deflector is the same as the bottom length of the third deflector. The bottom width of the first deflector is the same as the bottom width of the third deflector, and the bottom length of the first deflector is the same as the bottom length of the second deflector.

8. The image sensing device according to claim 3, characterized in that, Also includes: A fifth photodiode and a sixth photodiode, wherein the plurality of deep trenches isolate and separate the fifth photodiode and the sixth photodiode; as well as A third color filter is disposed on the fifth photodiode and the sixth photodiode, wherein the first deflector and the second deflector are not disposed on the third color filter.

9. The image sensing device according to claim 3, characterized in that, The bottom width of the first deflector is the same as the bottom length of the first deflector, and the first deflector is disposed above the junction of the first color filter and the second color filter.

10. The image sensing device according to claim 3, characterized in that, The axis of symmetry of the deep trench below the first color filter is misaligned with the axis of symmetry of the first deflector, and the axis of symmetry of the deep trench below the second color filter is misaligned with the axis of symmetry of the second deflector. The difference between the offset of the axis of symmetry of the first deflector relative to the axis of symmetry isolated by the deep trench below the first color filter and the offset of the axis of symmetry of the second deflector relative to the axis of symmetry isolated by the deep trench below the second color filter is between 0 and 0.5 of the pixel size.

11. The image sensing device according to claim 1, characterized in that, It also includes a lens layer and a buffer layer, wherein the lens layer is disposed on the cover layer, and the buffer layer is disposed between the first color filter and the first deflector. The refractive index of the first deflector is greater than that of the buffer layer, and the refractive index of the buffer layer is greater than that of the first color filter.

12. The image sensing device according to claim 1, characterized in that, The first deflector extends continuously from the bottom surface of the cover layer to the top surface of the first color filter to cover and surround the first color filter.

13. The image sensing device according to claim 1, characterized in that, It also includes a first lens disposed above the first deflector, wherein the axis of symmetry isolated by the deep trench below the first color filter, the axis of symmetry of the first deflector, and the axis of symmetry of the cover layer are misaligned with each other, and the offset of the axis of symmetry of the first deflector relative to the axis of symmetry isolated by the deep trench below the first color filter is less than the offset of the axis of symmetry of the first lens relative to the axis of symmetry isolated by the deep trench below the first color filter. The difference between the offset of the axis of symmetry of the first deflector and the offset of the axis of symmetry of the first lens is between 0.1 and 0.8 pixels.

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