Carrier device and plasma etching apparatus

Abstract

This invention relates to a carrier disk apparatus and a plasma etching apparatus. The carrier disk apparatus includes a carrier disk with several support portions, each of which is telescopically connected to the carrier disk and configured to support a wafer to be etched. Each support portion and the carrier disk define a receiving cavity and several buffer cavities. Each buffer cavity communicates with the receiving cavity and contains a carrier medium. Each buffer cavity is an empty cavity configured to hold the carrier medium, and the total weight of the carrier medium that can be contained in each buffer cavity is less than the weight of a single wafer to be etched. Each support portion automatically adjusts the relative distance between the wafer to be etched and the upper electrode of the plasma etching apparatus according to the number of wafers to be etched placed on the carrier disk. The carrier disk apparatus and plasma etching apparatus provided by this invention can automatically adjust the relative distance between the wafer to be etched and the upper electrode of the plasma etching apparatus, thereby ensuring a consistent etching rate regardless of the number of wafers to be etched.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more particularly to a carrier disk apparatus and a plasma etching apparatus. Background Technology

[0002] During the etching process of wafers to be etched, if the number of wafers to be etched on the carrier disk is inconsistent, it will lead to inconsistent etching rates of the wafers to be etched, and in severe cases, it may even cause product abnormalities.

[0003] Therefore, improving the consistency of the etching rate of the wafer to be etched is an urgent problem to be solved. Summary of the Invention

[0004] In view of the shortcomings of the prior art, the purpose of this application is to provide a carrier disk device and a plasma etching equipment, which aims to solve the problem of poor etching rate consistency of the wafer to be etched.

[0005] A carrier disk apparatus includes a carrier disk with a plurality of support portions, each support portion being telescopically connected to the carrier disk and configured to support a wafer to be etched. Each support portion and the carrier disk define a receiving cavity and a plurality of buffer cavities. Each buffer cavity is connected to the receiving cavity and contains a carrier medium. Each buffer cavity is an empty cavity configured to contain the carrier medium, and the total weight of the carrier medium that can be contained in each buffer cavity is less than the weight of a single wafer to be etched. Each support portion automatically adjusts the relative distance between the wafer to be etched and the upper electrode of the plasma etching equipment according to the number of wafers to be etched placed on the carrier disk.

[0006] In the aforementioned carrier disk apparatus, when the carrier section carries the wafer to be etched, the weight of the wafer causes the carrier section to extend and retract, allowing the carrier medium in the accommodating cavity to enter the buffer cavity connected to the accommodating cavity. Since the total weight of the carrier medium that each buffer cavity can hold is less than the weight of a single wafer to be etched, and the carrier medium is constrained by the walls of the accommodating cavity and the buffer cavity, whether placing a single wafer to be etched or multiple wafers to be etched, an equal weight of carrier medium can be forced into all buffer cavities. Thus, the carrier sections, which extend and retract, can automatically adjust the relative distance between the wafer to be etched and the upper electrode of the plasma etching equipment according to the number of wafers to be etched, thereby ensuring that the etching rate remains consistent regardless of the number of wafers to be etched.

[0007] Optionally, the carrier portion includes a telescopic member and a carrier component, the carrier component being telescopically connected to the carrier disk via the telescopic member. Thus, by means of the telescopic member's extension and retraction, when the carrier component is not carrying the wafer to be etched, it can be held on one side of the carrier disk along the first direction.

[0008] Optionally, the extension stroke of the telescopic component is automatically adjusted according to the number of wafers to be etched placed on the carrier. In this way, when the carrier carries the wafers to be etched, the position of the carrier can be adaptively adjusted by the extension and retraction of the telescopic component, thereby adjusting the position of the wafers to be etched.

[0009] Optionally, each buffer chamber is a vacuum environment, and each buffer chamber is located above the receiving cavity. This avoids the problem of gas remaining in the buffer chamber, which could prevent the carrier from failing to fill the buffer chamber with the carrier medium when supporting the wafer to be etched. Furthermore, the negative pressure of the vacuum allows for easier adjustment of the relative distance between the wafer to be etched and the upper electrode, in conjunction with the gravity of the wafer when the carrier medium fills the buffer chamber. The buffer chamber's location above the receiving cavity also allows for easier free fall of the carrier medium, further enhancing the ease of adjusting the relative distance.

[0010] Optionally, the carrier disk includes a carrier disk body and at least one protrusion. The protrusion is located on the side of the carrier disk body closer to the upper electrode. The carrier disk body and the supporting portion together define a receiving cavity, and each protrusion has a buffer cavity. Thus, the receiving cavity is defined by the carrier disk body and the supporting portion, and a buffer cavity is defined by each buffer cavity, enabling communication between the receiving cavity and the buffer cavity while ensuring the sealing of the carrier disk. Positioning the protrusion closer to the upper electrode avoids the need to adaptively increase the area of ​​the upper and lower electrodes if the protrusion were located circumferentially on the carrier disk, as this would increase the overall area of ​​the carrier disk device.

[0011] Optionally, the protrusions include multiple members, each of which is connected between two adjacent protrusions by means of a corresponding telescopic member, so as to telescopically connect with the carrier plate body. In this way, it is possible to avoid any height difference on the surface of the carrier plate along the first direction.

[0012] Optionally, the distance between two adjacent protrusions is less than the radial dimension of the carrier. If the radial dimension of the carrier is less than the distance between two adjacent protrusions, the upward movement of the carrier cannot be restricted. That is, when some carriers are carrying the wafer to be etched, the carriers not carrying the wafer to be etched cannot be restricted from rising. This may cause the carriers not carrying the wafer to be etched to be "lifted" by force when the carrier medium is squeezed. Consequently, the distance between the carrier carrying the wafer to be etched and the upper electrode does not reach the required distance, and the adjustment of the etching rate fails.

[0013] Optionally, when the wafer to be etched is not supported, the distance between the carrier and the upper electrode is greater than the distance between the protrusion and the upper electrode. Understandably, the protrusion is positioned higher in the height direction than the carrier body, that is, the buffer cavity is positioned higher in the height direction than the receiving cavity, thus making it easier to carry the medium for free fall.

[0014] Optionally, the carrier medium includes an insulating fluid. The fluid flows more easily within the receiving cavity and buffer cavity, thereby making it easier to adjust the relative distance between the wafer to be etched and the upper electrode. The insulating fluid, while improving the ease of adjusting the relative distance, avoids interfering with the electric field in the plasma etching equipment.

[0015] Based on the same inventive concept, this application also provides a plasma etching apparatus, which includes an upper electrode, a lower electrode, and the aforementioned carrier disk device; wherein the carrier disk device is located between the upper electrode and the lower electrode.

[0016] In the aforementioned plasma etching equipment, the upper and lower electrodes are used to generate an electric field for etching the wafers to be etched. By using a carrier disk device, the plasma etching equipment can improve the uniformity of the etching rate when etching the wafers to be etched, regardless of the number of wafers to be etched, thereby effectively improving the etching quality of the product and increasing the product yield. Attached Figure Description

[0017] Figure 1 This is a full-disk schematic diagram of the wafer carrier disk to be etched in related technologies;

[0018] Figure 2 This is a schematic diagram of a non-full disk of a wafer carrier to be etched in a related technology.

[0019] Figure 3 This is a schematic diagram of a carrier disk device according to an embodiment of this application;

[0020] Figure 4 This is a schematic diagram of a carrier disk device according to an embodiment of the present application, in which a plurality of wafers to be etched are placed;

[0021] Figure 5 This is a schematic diagram of a carrier device according to an embodiment of the present application, in which a small number of wafers to be etched are placed;

[0022] Figure 6 This is a schematic diagram of a carrier disk device according to another embodiment of this application.

[0023] Explanation of reference numerals in the attached figures:

[0024] 10-Disk carrier device; 11-Disk carrier; 12-Supporting element; 20-Wafer to be etched; 100-Disk carrier device; 110-Disk carrier; 111-Disk carrier body; 112-Protrusion; a-Accommodating cavity; b-Buffer cavity; 120-Supporting part; 121-Extension element; 122-Supporting element; 130-Supporting medium; 200-Wafer to be etched. Detailed Implementation

[0025] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings. Preferred embodiments of this application are shown in the drawings. However, this application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of the disclosure of this application.

[0026] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the specification of this application is for the purpose of describing particular embodiments only and is not intended to be limiting of this application.

[0027] In the semiconductor industry, plasma etching is a commonly used process for etching wafers. The principle of plasma etching is that dissociated gaseous reactants react with the film being etched, and the film is removed by expelling the reaction products from the reaction chamber. The plasma etching process can be divided into chemical etching and physical etching. Chemical etching mainly involves the reaction of active molecules with the film being etched, while physical etching mainly involves charged ions bombarding the surface of the film being etched under the influence of an electric field. Physical and chemical etching occur simultaneously and promote each other.

[0028] Figure 1 A full-disk schematic diagram of a disk carrier device 10 in the related art is shown; Figure 2 A schematic diagram of a partially full disk carrier device 10 in the related art is shown.

[0029] Combination Figure 1 and Figure 2 As shown, the carrier device 10 includes a carrier disk 11 and multiple carrier members 12 connected to the carrier disk 11. The carrier members 12 are used to carry the wafers 20 to be etched, thereby simultaneously etching multiple wafers 20. Since it is often difficult to maintain a full disk in actual production, the inventors discovered through research that when the disk is not full (see...), Figure 2 Abnormal etching of the wafers 20 to be etched frequently occurs. The inventors investigated the cause and discovered that when the disk is not full, the number of wafers 20 to be etched in the carrier device 10 is less than the number of carrier elements 12, resulting in a corresponding reduction in the overall area of ​​the film to be etched. This also reduces the consumption of dissociation gas, meaning an increase in reactants. It is precisely during this process that the etching reaction exhibits a positive promoting effect, with the etching rate accelerating compared to a full disk state. In severe cases, this leads to product abnormalities, i.e., the phenomenon of macroscopic etching load effect.

[0030] Based on this, the inventors attempted to improve the load effect by placing a secondary wafer to fill the remaining carriers 12 when the number of wafers 20 to be etched is insufficient to fill all the carriers 12 of the carrier device 10. However, the improvement effect was poor in the actual production process.

[0031] Therefore, this application aims to provide a solution that can solve the above-mentioned technical problems, the details of which will be described in subsequent embodiments.

[0032] Figure 3 A schematic diagram of a disk carrier device 100 according to an embodiment of this application is shown; Figure 4 This illustration shows a schematic diagram of a carrier device 100 according to an embodiment of the present application, in which a plurality of wafers 200 to be etched are placed; Figure 5 This illustration shows a schematic diagram of a carrier device 100 according to an embodiment of the present application, in which a small number of wafers 200 to be etched are placed.

[0033] Combination Figure 3 , Figure 4 and Figure 5 As shown, an embodiment of this application provides a carrier disk device 100, including a carrier disk 110. The carrier disk 110 is provided with a plurality of carrier portions 120, each carrier portion 120 being telescopically connected to the carrier disk 110. The carrier portions 120 are configured to carry wafers 200 to be etched. Each carrier portion 120 and the carrier disk 110 define a receiving cavity a and a plurality of buffer cavities b. Each buffer cavity b is connected to the receiving cavity a. The receiving cavity a contains a carrier medium 130. Each buffer cavity b is an empty cavity, configured to contain the carrier medium 130, and the total weight of the carrier medium 130 that can be contained in each buffer cavity b is less than the weight of a single wafer 200 to be etched. The carrier portion 120 automatically adjusts the relative distance between the wafers 200 to be etched and the upper electrode of the plasma etching equipment according to the number of wafers 200 to be etched placed on the carrier disk 110.

[0034] After analyzing the principle of plasma etching, the inventors discovered that when the etching gap decreases, not only does the concentration of active molecules in chemical etching increase, but the bombardment intensity of charged ions in physical etching also increases, thus increasing the etching rate. The etching gap is the relative distance between the surface of the wafer 200 to be etched and the upper electrode used to generate the electric field and etch the wafer 200. It can be understood that by adjusting the relative distance between the wafer 200 to be etched and the upper electrode, the etching rate of the wafer 200 can be adjusted to improve the loading effect, ensuring that the etching rate of the wafer 200 remains approximately consistent regardless of whether the disk is fully or partially etched.

[0035] Please continue reading. Figure 3 , Figure 4 and Figure 5When the carrier portion 120 carries the wafer 200 to be etched, the carrier portion 120 expands and contracts due to the weight of the wafer 200, allowing the carrier medium 130 in the accommodating cavity a to enter the buffer cavity b connected to the accommodating cavity a. Since the total weight of the carrier medium 130 that each buffer cavity b can accommodate is less than the weight of a single wafer 200 to be etched, and the carrier medium 130 is restricted by the cavity walls of the accommodating cavity a and the buffer cavity b, when placing a single wafer 200 to be etched, or when placing multiple wafers 200 to be etched, an equal weight of carrier medium 130 can be squeezed into all the buffer cavities b.

[0036] It should be noted that, since the total weight of the carrier medium 130 that can be contained in each buffer cavity b is less than the weight of a single wafer 200 to be etched, when at least one wafer 200 to be etched is placed there, such as Figure 5 As shown, the weight of the wafer 200 to be etched is sufficient to fill the entire buffer cavity b with the carrier medium 130. It can be understood that, limited by the walls of the buffer cavity b and the cavity a, regardless of the number of wafers 200 to be etched, an equal weight of carrier medium 130 will enter the buffer cavity b. Figure 4 As shown, when a large number of wafers 200 to be etched are placed, the relative distance between the wafers 200 to be etched and the upper electrode is relatively close, such as... Figure 5 As shown, when the number of wafers 200 to be etched is small, the relative distance between the wafers 200 to be etched and the upper electrode is relatively large. Figure 4 and Figure 5 In the case of two different etching areas, Figure 5 The number of wafers 200 to be etched is less, and their etchable area is also smaller. This smaller etchable area results in a faster etching rate. The carrier device 100 adaptively adjusts the relative distance between the wafers 200 to be etched and the upper electrode according to the number of wafers 200 placed on it. Figure 4 The wafer 200 to be etched is closer to the top electrode. Figure 5 The wafer 200 to be etched is further away from the upper electrode, thereby balancing the etching rate through different distances, thus making the etching rate more consistent, which also alleviates the load effect of the carrier device 100.

[0037] Thus, each carrier portion 120 that is telescopically connected to the carrier disk 110 can automatically adjust the relative distance between the wafer 200 to be etched and the upper electrode of the plasma etching equipment according to the number of wafers 200 to be etched, so that the etching rate can be consistent regardless of the number of wafers 200 to be etched.

[0038] Please combine Figure 3 , Figure 4 and Figure 5As shown, in some embodiments, the carrier portion 120 includes a telescopic member 121 and a carrier member 122, with the carrier member 122 telescopically connected to the carrier disk 110 via the telescopic member 121. Thus, by means of the telescopic member 121, when the carrier member 122 is not carrying the wafer 200 to be etched, it can be held on one side of the carrier disk 110 along the first direction. Specifically, in some embodiments, the telescopic stroke of the telescopic member 121 is automatically adjusted according to the number of wafers 200 to be etched placed on the carrier disk 110. Thus, when the carrier member 122 carries the wafer 200 to be etched, the position of the carrier member 122 can be adaptively adjusted by the telescopic member 121, thereby adjusting the position of the wafers 200 to be etched.

[0039] In some specific embodiments, the telescopic member 121 is configured as a sealing telescopic member 121. This ensures that the buffer cavity b and the receiving cavity a remain sealed, preventing external gas from entering the buffer cavity b and causing a change in the adjustable distance of the wafer 200 to be etched, thereby leading to the failure of the etching rate adjustment for the wafer 200. Exemplarily, the sealing telescopic member 121 can be a rubber telescopic member; in other embodiments, it can be any other sealing telescopic member 121 that meets the sealing requirements, without limitation. Further, the telescopic member 121 is an elastic telescopic member. Thus, by means of the elastic force of the elastic telescopic member, on the one hand, when the carrier 122 is not carrying the wafer 200 to be etched, the carrier 122 can be held on the side of the carrier 110 closer to the upper electrode. On the other hand, when the carrier 122 carries the wafer 200 to be etched, the elastic force of the elastic telescopic member makes it easier to adjust the position of the carrier 122, thereby adjusting the relative distance between the wafer 200 to be etched and the upper electrode.

[0040] like Figure 3 As shown, in some embodiments, each buffer cavity b is a vacuum environment, and each buffer cavity b is located above the accommodating cavity a. This avoids the problem of gas remaining in the buffer cavity b, which could make it difficult for the carrier 122 to fill the buffer cavity b with the carrier medium 130 when carrying the wafer 200 to be etched. Furthermore, a vacuum refers to a specific space where some substances are expelled, causing its pressure to be less than one atmosphere; that is, the vacuum buffer cavity b is under negative pressure. Utilizing the negative pressure of the vacuum, when the carrier medium 130 fills the buffer cavity b, the relative distance between the wafer 200 to be etched and the upper electrode can be adjusted more easily in conjunction with the gravity of the wafer 200. Since the buffer cavity b is located above the accommodating cavity a, the carrier medium 130 can more easily undergo free fall, further improving the ease of adjusting the relative distance.

[0041] Please continue reading. Figure 3In some embodiments, the carrier disk 110 includes a carrier disk body 111 and at least one protrusion 112, with the protrusion 112 located on the side of the carrier disk body 111 closer to the upper electrode. The carrier disk body 111 and the support portion 120 together define a receiving cavity a, and each protrusion 112 is provided with a buffer cavity b. Thus, the receiving cavity a is defined by the carrier disk body 111 and the support portion 120, and the buffer cavity b is defined by each buffer cavity b, enabling communication between the receiving cavity a and the buffer cavity b while ensuring the sealing of the carrier disk 110. Moreover, by placing the protrusion 112 closer to the upper electrode, in conjunction with some embodiments described later, it is possible to avoid the overall area of ​​the carrier disk device 100 increasing when the protrusion 112 is placed in the circumferential direction of the carrier disk 110, thus avoiding the need to adaptively increase the area of ​​the upper and lower electrodes.

[0042] In some specific embodiments, the protrusions 112 include multiple members, and each carrier member 122 is connected between two adjacent protrusions 112 by means of a corresponding telescopic member 121, so as to telescopically connect with the carrier body 111. In this way, the carrier 110 can be prevented from extending along the first direction (i.e., the first direction). Figure 3 The surface (in the x-axis direction) has a height difference. Of course, in other embodiments, the number, shape and position of the protrusions 112 can be adapted to actual needs, and are not limited here.

[0043] See Figure 3 and combined Figure 5 In some embodiments, the distance between two adjacent protrusions 112 is less than the radial dimension of the carrier 122. If the radial dimension of the carrier 122 is less than the distance between two adjacent protrusions 112, the upward movement of the carrier 122 cannot be restricted. That is, when some carriers 122 carry the wafer 200 to be etched, the carriers 122 that do not carry the wafer 200 to be etched cannot be restricted from rising. This may result in the carrier 122 that does not carry the wafer 200 to be etched being "lifted" when the carrier medium 130 is squeezed. Consequently, the distance between the carrier 122 carrying the wafer 200 to be etched and the upper electrode does not reach the required distance, and the adjustment of the etching rate fails.

[0044] The inventors discovered that when the difference between the radial dimension of the carrier 122 and the distance between two adjacent protrusions 112 is less than 2 mm, there is still a defect that makes it difficult to reliably restrict the rise of the carrier 122. Conversely, when the difference is greater than 5 mm, the carrier 122 becomes too large, occupying a significant amount of space, which affects the number of carriers 122 that can be installed in the carrier device 100, thus limiting the number of wafers 200 that can be etched. Therefore, the difference between the radial dimension of the carrier 122 and the distance between two adjacent protrusions 112 is 2 mm to 5 mm. Understandably, the difference between the radial dimension of the carrier 122 and the distance between two adjacent protrusions 112 includes, but is not limited to, 2 mm, 2.5 mm, 3 mm, 3.5 mm, 4 mm, 4.5 mm, or 5 mm.

[0045] Please continue reading. Figure 3 In some embodiments, when the wafer 200 to be etched is not supported, the distance between the carrier 122 and the upper electrode is greater than the distance between the protrusion 112 and the upper electrode. Understandably, the protrusion 112 is positioned higher in the height direction than the carrier body 111, that is, the buffer cavity b is positioned higher in the height direction than the receiving cavity a, thereby making it easier for the carrier medium 130 to fall freely.

[0046] Combination Figures 3 to 5 As shown, in some embodiments, the carrier medium 130 includes an insulating fluid. It should be noted that a fluid refers to a flowing substance, an object that continuously deforms under any minute shear force. The fluid can flow more easily in the receiving cavity a and the buffer cavity b, thereby making it easier to adjust the relative distance between the wafer 200 to be etched and the upper electrode. The insulating fluid, while improving the ease of adjusting the relative distance, avoids interfering with the electric field in the plasma etching equipment.

[0047] In some specific embodiments, the carrier medium 130 includes an insulating liquid. The insulating liquid, exemplarily, includes deionized water or hydraulic oil. Deionized water refers to pure water after removing impurities in ionic form. Furthermore, deionized water has high resistivity and is a good insulator; in conjunction with some embodiments described later, deionized water can prevent interference between the electric fields of the upper and lower electrodes during the etching process in the carrier device 100. Hydraulic oil is also an insulator, and when used within the carrier device 100, it can also prevent interference with the electric field. The carrier medium 130 also includes a flexible material. The flexible material, exemplarily, includes vacuum grease. Vacuum grease has good insulating properties. Of course, the carrier medium 130 can also be other media; this is merely an example and not a limitation.

[0048] Figure 6A schematic diagram of a carrier disk device 100 according to another embodiment of this application is shown.

[0049] See Figure 6 and combined Figure 3 , Figure 4 and Figure 5 In some other embodiments, the protrusion 112 in the aforementioned embodiments may not be provided. In this way, the buffer cavity b is not formed by relying on the protrusion 112 in the aforementioned embodiments, but directly increases the volume in the carrier disk 110. This can make the manufacturing of the carrier disk device 100 simpler while allowing the carrier 122 to adjust the etching rate of the wafer 200 to be etched by adjusting the relative distance between it and the upper electrode.

[0050] Another aspect of this application provides a plasma etching apparatus, combined with Figure 3 , Figure 4 and Figure 5 As shown, the plasma etching equipment includes an upper electrode, a lower electrode, and the aforementioned carrier disk device 100. The carrier disk device 100 is located between the upper and lower electrodes. The upper and lower electrodes in the plasma etching equipment are used to generate an electric field for etching the wafer 200 to be etched. By using the carrier disk device 100, the plasma etching equipment can improve the etching rate to be more consistent regardless of the number of wafers 200 to be etched, thereby effectively improving the etching quality and product yield.

[0051] Specifically, the carrier disk device 100 is disposed on the lower electrode, and the upper electrode is located on the carrier disk device 100 in the first direction (i.e., in the direction of...). Figure 3 On one side of the x-axis direction. Based on the principle of plasma etching process in some of the aforementioned embodiments, when the number of wafers 200 to be etched is small, the etching rate is too fast. With the help of the carrier 122 in the carrier device 100, the wafers 200 to be etched are further away from the upper electrode, which slows down the etching rate and thus alleviates the load effect. That is, it ensures that the etching uniformity can be improved regardless of the number of wafers 200 to be etched.

[0052] It should be understood that the application of the present invention is not limited to the examples above. Those skilled in the art can make improvements or modifications based on the above description, and all such improvements and modifications should fall within the protection scope of the appended claims.

Claims

1. A carrier disk device, characterized in that, include: A carrier disk is provided with a plurality of support portions, each of which is telescopically connected to the carrier disk and is configured to support a wafer to be etched. Each of the carrier portions and the carrier disk defines a receiving cavity and a plurality of buffer cavities. Each of the buffer cavities is connected to the receiving cavity. The receiving cavity contains a carrier medium. Each of the buffer cavities is an empty cavity. Each of the buffer cavities is configured to receive the carrier medium. The total weight of the carrier medium that each of the buffer cavities can hold is less than the weight of a single wafer to be etched. Each of the carrier portions automatically adjusts the relative distance between the wafer to be etched and the upper electrode of the plasma etching equipment according to the number of wafers to be etched placed on the carrier disk.

2. The carrier disk device as claimed in claim 1, characterized in that, The load-bearing part includes a telescopic component and a load-bearing component; The carrier is telescopically connected to the carrier plate via the telescopic component.

3. The carrier disk device as described in claim 2, characterized in that, The extension stroke of the telescopic component is automatically adjusted according to the number of wafers to be etched placed on the carrier.

4. The carrier disk device as claimed in claim 2, characterized in that, Each of the buffer cavities is a vacuum environment, and each of the buffer cavities is located above the receiving cavity.

5. The carrier disk device as claimed in claim 2, characterized in that, The carrier disk includes a carrier disk body and at least one protrusion, the protrusion being disposed on the side of the carrier disk body near the upper electrode; The carrier body and the bearing portion together define the receiving cavity, and each of the protrusions is provided with the buffer cavity.

6. The carrier disk device as claimed in claim 5, characterized in that, The protrusions include multiple components; Each of the carrier members is connected between two adjacent protrusions by means of a corresponding telescopic member to telescopically connect with the carrier plate body.

7. The carrier disk device as claimed in claim 6, characterized in that, The distance between two adjacent protrusions is less than the radial dimension of the support member.

8. The carrier disk device as claimed in claim 5, characterized in that, When the wafer to be etched is not supported, the distance between the support member and the upper electrode is greater than the distance between the protrusion member and the upper electrode.

9. The carrier disk device according to any one of claims 1-8, characterized in that, The carrier medium includes an insulating fluid.

10. A plasma etching apparatus, characterized in that, Includes an upper electrode, a lower electrode, and a carrier disk device as described in any one of claims 1-9; The carrier disk device is located between the upper electrode and the lower electrode.

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