TOPCon电池高均匀性硼扩方法

By employing a multi-step source-source method, variable-temperature oxygen-driven junction pushing, and variable-voltage annealing, the problem of non-uniform boron content in TOPCon cell boron diffusion was solved, achieving more efficient silicon wafer diffusion and higher cell conversion efficiency, while reducing process costs.

CN117810296BActive Publication Date: 2026-07-17CECEP SOLAR ENERGY TECH (ZHENJIANG) CO LTD

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
CECEP SOLAR ENERGY TECH (ZHENJIANG) CO LTD
Filing Date
2023-12-19
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

Existing boron expansion methods for TOPCon batteries suffer from uneven boron content distribution, resulting in poor sheet resistance uniformity and low conversion efficiency.

Method used

By employing a multi-step power supply, variable-temperature oxygen-driven junction pushing, and variable-pressure annealing method, and by controlling parameters such as temperature, time, gas flow rate, and furnace pressure, a uniform PN junction is formed, thereby improving diffusion uniformity.

Benefits of technology

This improves the uniformity of doping concentration and sheet resistance on the silicon wafer surface, reduces lattice damage, enhances the conversion efficiency and electrical performance of solar cells, and lowers process costs.

✦ Generated by Eureka AI based on patent content.
Patent Text Reader

Abstract

本发明公开了一种TOPCon电池高均匀性硼扩方法,包括进舟、升温、抽真空和检漏、前氧、多步通源、变温有氧推结、变压退火等步骤。本发明硼扩方法创造性地通过多步通源、变温有氧推结和变压退火及各步骤衔接,并给出了在此方法下,每个步骤中的温度、时间、气体流量和炉内压强等参数的最优窗口值,从而在硅片表面形成PN结,改善扩散均匀性,具有更低的表面掺杂浓度和结深,同时提升扩散后的方阻均匀性,短波响应强,减少硅片表面晶格损伤,减弱光生载流子的复合效应,具有更少的硅片内部缺陷和更高的电池片转换效率,相对减少了扩散工艺时间,降低了工艺气体成本。
Need to check novelty before this filing date? Find Prior Art