A high frequency solid state power amplifier device with hermetic encapsulation

Abstract

The application relates to a high-frequency solid-state power amplifier device with air-tight packaging, which comprises a base, a tube shell, a cover plate, a partition wall, a low-frequency lead and a high-frequency lead; the tube shell is a rectangular block, a rectangular through hole is formed in the tube shell along an axial direction, and the base seals the rectangular through hole; two I-shaped blind holes are formed in the tube shell in a direction perpendicular to the rectangular through hole; the high-frequency lead comprises a first high-frequency lead, a second high-frequency lead and a third high-frequency lead; the low-frequency lead passes through the tube shell and supplies power to a driving amplification unit and a power amplification unit; the partition wall is arranged at a middle position of the rectangular through hole and divides the tube shell into front and rear cavities; a first dielectric sheet, a second dielectric sheet, a first heat sink, a first attenuation unit and the driving amplification unit are arranged in the front cavity. The application realizes signal amplification and air-tight packaging in the tube shell.

Description

Technical Field

[0001] This invention relates to a hermetically sealed high-frequency solid-state power amplifier device, belonging to the field of communication technology. Background Technology

[0002] Solid-state power amplifiers (SPAs) primarily amplify microwave signals for long-distance space transmission and are a core component of satellite communication, data transmission, and navigation systems. With the rapid development of satellite technology, higher requirements are being placed on the frequency, bandwidth, power, and efficiency of SPAs to achieve high speed and large capacity.

[0003] Furthermore, next-generation satellite technologies such as low-Earth orbit internet require solid-state power amplifiers to be highly integrated, low-cost, and mass-producible to enable rapid networking and upgrades. Meanwhile, aerospace applications place stringent reliability requirements on solid-state power amplifiers, and the bare chips used inside high-frequency solid-state power amplifiers are susceptible to external factors such as moisture and oxygen, posing a significant challenge to high-reliability design. Summary of the Invention

[0004] The technical problem solved by this invention is to overcome the shortcomings of the prior art and propose a hermetically sealed high-frequency solid-state power amplifier device to achieve signal amplification and hermetically sealed packaging inside the tube.

[0005] The solution of the present invention is:

[0006] A hermetically sealed high-frequency solid-state power amplifier device includes: a base, a housing, a cover plate, a partition wall, low-frequency leads, and high-frequency leads; wherein,

[0007] The shell is a rectangular block with a rectangular through hole opened along the axial direction inside it. The base closes the rectangular through hole. There are two I-shaped blind holes opened inside the shell perpendicular to the rectangular through hole.

[0008] The high-frequency lead includes a first high-frequency lead, a second high-frequency lead, and a third high-frequency lead;

[0009] The low-frequency lead passes through the tube shell to supply power to the drive amplifier unit and the power amplifier unit;

[0010] The partition wall is placed in the middle of the rectangular through hole, dividing the inside of the shell into two cavities, front and back.

[0011] The front cavity contains a first dielectric sheet, a second dielectric sheet, a first heat sink, a first attenuation unit, and a drive amplification unit. The first dielectric sheet, the second dielectric sheet, and the first heat sink are bonded to a base. The first attenuation unit and the drive amplification unit are soldered to the first heat sink. The first heat sink is bonded to the base. One end of the first dielectric sheet is connected to one end of a first high-frequency lead via a gold strip, and the other end of the first high-frequency lead extends into a fourth air cavity. The other end of the first dielectric sheet is connected to one end of the first attenuation unit via a gold wire. The other end of the first attenuation unit is connected to one end of the drive amplification unit via a gold wire. The other end of the drive amplification unit is connected to one end of the second dielectric sheet via a gold wire. The other end of the second dielectric sheet is connected to one end of the second high-frequency lead via a gold strip.

[0012] The rear cavity houses a third dielectric sheet, a fourth dielectric sheet, a second heat sink, a second attenuation unit, and a power amplification unit. The other end of the second high-frequency lead is connected to one end of the third dielectric sheet via a gold strip. The other end of the third dielectric sheet is connected to one end of the second attenuation unit via a gold wire. The other end of the second attenuation unit is connected to one end of the power amplification unit via a gold wire. The other end of the power amplification unit is connected to one end of the fourth dielectric sheet via a gold wire. The other end of the fourth dielectric sheet is connected to one end of the third high-frequency lead via a gold strip. The second attenuation unit and the power amplification unit are soldered to the second heat sink. The second heat sink is soldered to the base.

[0013] Furthermore, during signal transmission, the RF input signal enters the first dielectric sheet through one end of the first high-frequency lead. The first dielectric sheet inputs the RF input signal to the first attenuation unit, which attenuates the RF input signal and then inputs the attenuated signal to the drive amplification unit. The drive amplification unit amplifies the signal for the first time, increasing the power from the microwatt level to the milliwatt level. The signal after the first amplification is transmitted through the second dielectric sheet to the second high-frequency lead, which then transmits the signal to the third dielectric sheet. The third dielectric sheet inputs the signal to the second attenuation unit, which attenuates the signal again and then inputs the attenuated signal to the power amplification unit. The signal is amplified a second time, increasing the power to the watt level. The signal after the second amplification is then transmitted through the fourth dielectric sheet to one end of the third high-frequency lead, and finally transmitted to the external interface.

[0014] Furthermore, the base is made of tungsten copper, and the tube shell is made of Kovar alloy.

[0015] Furthermore, the partition wall is used to adjust the isolation between the drive amplifier unit and the power amplifier unit.

[0016] Furthermore, a fourth air cavity is provided at one end of the tube shell, and a waveguide cavity is provided at the other end. The other end of the first high-frequency lead is placed in the fourth air cavity; the other end of the third high-frequency lead is placed in the waveguide cavity.

[0017] Furthermore, a waveguide cavity is provided at the other end of the tube shell, and the other end of the third high-frequency lead is placed in the waveguide cavity.

[0018] Furthermore, the input interface of the casing is an SMP type RF interface, and the output interface is a waveguide RF interface.

[0019] Furthermore, a first air cavity, a second air cavity, and a third air cavity are provided in the tube shell, and the first high-frequency input lead passes through the first air cavity; the third high-frequency output lead passes through the second air cavity and the third air cavity in sequence.

[0020] Furthermore, it also includes an embedded block, with a hole on the other end face of the tube shell. The embedded block mates with the hole to achieve the sealing of the waveguide cavity.

[0021] Furthermore, all internal interfaces of the casing are sealed.

[0022] The advantages of this invention compared to the prior art are:

[0023] (1) This invention integrates drive amplification, power amplification, microstrip transmission and coaxial waveguide conversion functions into one by adopting an integrated tube shell, thereby achieving miniaturization and weight reduction;

[0024] (2) This invention has the advantages of high integration, high performance and high reliability, and is very suitable for mass production. It meets the requirements of future satellites for "fast, intelligent and inexpensive" payload units and has broad application prospects. Attached Figure Description

[0025] Figure 1 This is a cross-sectional view of the casing of the present invention;

[0026] Figure 2 This is a bottom view of the present invention;

[0027] Figure 3 This is an internal view of the present invention;

[0028] Figure 4 This is a cross-sectional view of the device of the present invention. Detailed Implementation

[0029] The present invention will be further described below with reference to the embodiments.

[0030] A hermetically sealed high-frequency solid-state power amplifier device, such as Figure 1-4 As shown, it includes: a base 21, a casing 22, a cover plate 23, a partition wall 24, a low-frequency lead 26, and a high-frequency lead; wherein,

[0031] The shell 22 is a rectangular block with a rectangular through hole opened along the axial direction inside it. The base 21 closes the rectangular through hole. There are two I-shaped blind holes opened inside the shell 22 perpendicular to the rectangular through hole.

[0032] The high-frequency leads include a first high-frequency lead 27, a second high-frequency lead 28, and a third high-frequency lead 29;

[0033] The low-frequency lead passes through the tube housing 22 to supply power to the drive amplifier unit 9 and the power amplifier unit 11.

[0034] The partition wall 24 is placed in the middle of the rectangular through hole, dividing the interior of the tube shell 22 into two cavities, front and back.

[0035] like Figure 2 As shown, the front cavity contains a first dielectric sheet 2, a second dielectric sheet 4, a first heat sink 3, a first attenuation unit 8, and a drive amplification unit 9. The first dielectric sheet 2, the second dielectric sheet 4, and the first heat sink 3 are bonded to the base 21. The first attenuation unit 8 and the drive amplification unit 9 are soldered to the first heat sink 3. The first heat sink 3 is bonded to the base 21. One end of the first dielectric sheet 2 is connected to one end of the first high-frequency lead 27 via a gold strip, and the other end of the first high-frequency lead 27 extends into the fourth air cavity. The other end of the first dielectric sheet 2 is connected to one end of the first attenuation unit 8 via a gold wire. The other end of the first attenuation unit 8 is connected to one end of the drive amplification unit 9 via a gold wire. The other end of the drive amplification unit 9 is connected to one end of the second dielectric sheet 4 via a gold wire. The other end of the second dielectric sheet 4 is connected to one end of the second high-frequency lead 28 via a gold strip.

[0036] The rear cavity houses a third dielectric sheet 5, a fourth dielectric sheet 7, a second heat sink 6, a second attenuation unit 10, and a power amplification unit 11. The other end of the second high-frequency lead 28 is connected to one end of the third dielectric sheet 5 via a gold strip. The other end of the third dielectric sheet 5 is connected to one end of the second attenuation unit 10 via a gold wire. The other end of the second attenuation unit 10 is connected to one end of the power amplification unit 11 via a gold wire. The other end of the power amplification unit 11 is connected to one end of the fourth dielectric sheet 7 via a gold wire. The other end of the fourth dielectric sheet 7 is connected to one end of the third high-frequency lead 29 via a gold strip. The second attenuation unit 10 and the power amplification unit 11 are soldered to the second heat sink 6. The second heat sink 6 is soldered to the base.

[0037] During signal transmission, the radio frequency (RF) input signal enters the first dielectric substrate 2 through one end of the first high-frequency lead 27. The first dielectric substrate 2 inputs the RF input signal to the first attenuation unit 8, which attenuates the RF input signal and inputs the attenuated signal to the drive amplification unit 9. The drive amplification unit 9 amplifies the signal for the first time, increasing the power from the microwatt level to the milliwatt level. The signal after the first amplification is transmitted through the second dielectric substrate 4 to the second high-frequency lead 28, which transmits the signal after the first amplification to the third dielectric substrate 5. The third dielectric substrate 5 inputs the signal to the second attenuation unit 10, which attenuates the signal again and inputs the attenuated signal to the power amplification unit 11 for the second amplification, increasing the power to the watt level. The signal after the second amplification is transmitted through the fourth dielectric substrate 7 to one end of the third high-frequency lead 29, and then transmitted to the external interface.

[0038] The base 21 is made of tungsten copper, and the housing 22 is made of Kovar alloy. The partition 24 is used to adjust the isolation between the drive amplifier unit 9 and the power amplifier unit 11.

[0039] One end of the housing 22 is provided with a fourth air cavity, and the other end is provided with a waveguide cavity. The other end of the first high-frequency lead 27 is placed in the fourth air cavity; the other end of the third high-frequency lead 29 is placed in the waveguide cavity. The other end of the housing 22 is provided with a waveguide cavity, and the other end of the third high-frequency lead 29 is placed in the waveguide cavity. The input interface of the housing 22 is an SMP type RF interface, and the output interface is a waveguide RF interface.

[0040] The housing 22 is provided with a first air cavity, a second air cavity, and a third air cavity. The first high-frequency input lead 27 passes through the first air cavity; the third high-frequency output lead 29 passes through the second air cavity and the third air cavity in sequence.

[0041] It also includes an insert block 25, with an opening on the other end face of the housing 22. The insert block 25 mates with the opening to seal the waveguide cavity. All internal interfaces of the housing 22 are sealed.

[0042] The Ka-band 2W high-frequency solid-state power amplifier device fabricated using the above method operates at a frequency of 32–38 GHz, has an output power greater than 2W, a gain greater than 40 dB, a power accessory efficiency higher than 25%, and a body size of only 31.0 mm × 11.8 mm × 6.5 mm, weighing only 15 g. It also achieves hermetically sealed packaging. The device boasts advantages of high integration, high performance, and high reliability, meeting the application requirements of next-generation satellites for "fast, intelligent, and cost-effective" payload units.

[0043] Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make possible changes and modifications to the technical solutions of the present invention by utilizing the methods and techniques disclosed above without departing from the spirit and scope of the present invention. Therefore, any simple modifications, equivalent changes and alterations made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solutions of the present invention shall fall within the protection scope of the technical solutions of the present invention.

Claims

1. A hermetically sealed high-frequency solid-state power amplifier device, characterized in that, include: The components include a base (21), a casing (22), a cover plate (23), a partition wall (24), a low-frequency lead (26), and a high-frequency lead; among which, The shell (22) is a rectangular block with a rectangular through hole in its interior along the axial direction. The base (21) closes the rectangular through hole. Two I-shaped blind holes are opened in the shell (22) perpendicular to the rectangular through hole. The high-frequency leads include a first high-frequency lead (27), a second high-frequency lead (28), and a third high-frequency lead (29); The low-frequency lead passes through the tube shell (22) to supply power to the drive amplifier unit (9) and the power amplifier unit (11); The partition wall (24) is placed in the middle of the rectangular through hole, dividing the interior of the shell (22) into two cavities, front and back. The front cavity is provided with a first dielectric sheet (2), a second dielectric sheet (4), a first heat sink (3), a first attenuation unit (8), and a drive amplification unit (9); the first dielectric sheet (2), the second dielectric sheet (4), and the first heat sink (3) are bonded to the base (21); the first attenuation unit (8) and the drive amplification unit (9) are welded to the first heat sink (3); the first heat sink (3) is bonded to the base (21); one end of the first dielectric sheet (2) is connected to one end of the first high-frequency lead (27) through a gold strip, and the other end of the first high-frequency lead (27) extends into the fourth air cavity; the other end of the first dielectric sheet (2) is connected to one end of the first attenuation unit (8) through a gold wire; the other end of the first attenuation unit (8) is connected to one end of the drive amplification unit (9) through a gold wire; the other end of the drive amplification unit (9) is connected to one end of the second dielectric sheet (4) through a gold wire; the other end of the second dielectric sheet (4) is connected to one end of the second high-frequency lead (28) through a gold strip; The rear cavity is provided with a third dielectric sheet (5), a fourth dielectric sheet (7), a second heat sink (6), a second attenuation unit (10), and a power amplification unit (11); the other end of the second high-frequency lead (28) is connected to one end of the third dielectric sheet (5) by a gold strip, and the other end of the third dielectric sheet (5) is connected to one end of the second attenuation unit (10) by a gold wire; the other end of the second attenuation unit (10) is connected to one end of the power amplification unit (11) by a gold wire; the other end of the power amplification unit (11) is connected to one end of the fourth dielectric sheet (7) by a gold wire; the other end of the fourth dielectric sheet (7) is connected to one end of the third high-frequency lead (29) by a gold strip; the second attenuation unit (10) and the power amplification unit (11) are welded to the second heat sink (6); the second heat sink (6) is welded to the base.

2. The hermetically sealed high-frequency solid-state power amplifier device according to claim 1, characterized in that, During signal transmission, the radio frequency input signal enters the first dielectric sheet (2) through one end of the first high-frequency lead (27). The first dielectric sheet (2) inputs the radio frequency input signal to the first attenuation unit (8). The first attenuation unit (8) attenuates the radio frequency input signal and inputs the attenuated signal to the drive amplification unit (9). The drive amplification unit (9) amplifies the signal for the first time, increasing the power from microwatts to milliwatts. The signal after the first amplification is transmitted through the second dielectric sheet (4) to the second high-frequency lead (28). The second high-frequency lead (28) transmits the signal after the first amplification to the third dielectric sheet (5). The third dielectric sheet (5) inputs the signal to the second attenuation unit (10). The second attenuation unit (10) attenuates the signal again and sends the attenuated signal to the power amplification unit (11). The signal is amplified for the second time, increasing the power to watts. The signal after the second amplification is transmitted through the fourth dielectric sheet (7) to one end of the third high-frequency lead (29) and transmitted to the external interface.

3. The hermetically sealed high-frequency solid-state power amplifier device according to claim 1, characterized in that, The base (21) is made of tungsten copper, and the shell (22) is made of Kovar alloy.

4. The hermetically sealed high-frequency solid-state power amplifier device according to claim 1, characterized in that, The partition wall (24) is used to adjust the isolation between the drive amplifier unit (9) and the power amplifier unit (11).

5. The hermetically sealed high-frequency solid-state power amplifier device according to claim 1, characterized in that, A fourth air cavity is provided at one end of the tube shell (22), and a waveguide cavity is provided at the other end. The other end of the first high-frequency lead (27) is placed in the fourth air cavity; the other end of the third high-frequency lead (29) is placed in the waveguide cavity.

6. The hermetically sealed high-frequency solid-state power amplifier device according to claim 5, characterized in that, A waveguide cavity is provided at the other end of the tube shell (22), and the other end of the third high-frequency lead (29) is placed in the waveguide cavity.

7. The hermetically sealed high-frequency solid-state power amplifier device according to claim 1, characterized in that, The input interface of the housing (22) is an SMP type RF interface, and the output interface is a waveguide RF interface.

8. The hermetically sealed high-frequency solid-state power amplifier device according to claim 1, characterized in that, The tube shell (22) is provided with a first air cavity, a second air cavity and a third air cavity, and the first high-frequency lead (27) is passed through the first air cavity; The output third high-frequency lead (29) passes through the second air cavity and the third air cavity in sequence.

9. A hermetically sealed high-frequency solid-state power amplifier device according to claim 1, characterized in that, It also includes an embedded block (25), with a hole on the other end face of the tube shell (22). The embedded block (25) cooperates with the hole to achieve the closure of the waveguide cavity.

10. A hermetically sealed high-frequency solid-state power amplifier device according to claim 1, characterized in that, All internal interfaces of the casing (22) are sealed.

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