A high performance copper film processing process

Abstract

The application discloses a high-performance copper film processing technology, and belongs to the technical field of copper film processing technology, and comprises the following steps: after roughening, solidification and passivation treatment of pre-processed copper film, a passivated copper film is obtained, the passivated copper film is coated by being immersed into a modified silane solution, and after solidification, the processing technology of the high-performance copper film is completed; wherein, hyperbranched polysiloxane is prepared by hydrolysis of gamma-aminopropyl triethoxysilane and phenyl trimethoxysilane; then, the hyperbranched polysiloxane is used as raw material to graft carbon disulfide to obtain the modified silane solution; the C=N double bond formed by the hyperbranched structure and glutaraldehyde and the disulfide amino structure formed by carbon disulfide tightly chelate the siloxane monomer and the surface of the copper film; the silanol is generated by hydrolysis of the silane oxygen group and the organic functional group in the structure of the siloxane monomer, is combined with inorganic matter, forms siloxane, and finally generates a monomolecular film on the surface of the copper film, has the ability of isolating oxidation, and improves the oxidation resistance of the copper film.

Description

Technical Field

[0001] This invention belongs to the field of copper film processing technology, and specifically relates to a high-performance copper film processing process. Background Technology

[0002] PET composite copper film is currently used in the lithium battery industry as a high-quality negative electrode current collector material to replace electrolytic copper film. By using polymer materials to replace copper, PET composite copper film can save about 2 / 3 of the copper. After mass production, the production cost is far lower than that of electrolytic copper film. Secondly, PET composite copper film is safer, longer-lasting, and more compatible than traditional copper film, which better meets the needs of battery manufacturers to improve the safety performance of lithium batteries.

[0003] However, copper films oxidize and discolor at room temperature, especially in high humidity environments and environments containing large amounts of chloride ions and sulfur. Copper is extremely prone to oxidation and discoloration, leading to a decline in its physical properties. my country's electronic industry standard (SJ / T11483-2014) has set relevant regulations on the oxidation resistance of copper films used in lithium-ion batteries.

[0004] Currently, the problem of oxidation and discoloration on copper foil surfaces is generally addressed through technologies such as inorganic passivation, sol-gel, organic molecular adsorption, and surface coating. Among these, inorganic passivation mostly uses chromates and phosphates, which are not environmentally friendly; sol-gel films can easily affect the physical properties of copper foil; water-based copper foil anti-oxidation treatment solutions are gaining more attention due to their environmental advantages; and organic molecular water-based anti-oxidation treatment solutions have advantages such as easy synthesis, abundant and readily available raw materials, and low cost. However, there are few research reports on using organic molecular adsorption membrane technology to prevent oxidation and discoloration on copper foil surfaces. Benzotriazole, which has shown good results, has certain toxicity and high cost, while 2-mercaptobenzimidazole has low solubility. Therefore, existing copper foil surface treatment processes need improvement. Summary of the Invention

[0005] The purpose of this invention is to provide a high-performance copper film processing technology to solve the problem of easy oxidation on the surface of copper films.

[0006] The objective of this invention can be achieved through the following technical solutions:

[0007] A high-performance copper film processing technology includes the following steps:

[0008] After the pretreated copper film is roughened, cured, and passivated, a passivated copper film is obtained. The passivated copper film then undergoes a surface silanization treatment. The silanization treatment process is as follows:

[0009] The passivated copper film is immersed in a modified silane solution for coating, then removed and cured at 80-120℃ for 0.5-2.5h to complete the high-performance copper film processing technology.

[0010] The modified silane solution is prepared by the following steps:

[0011] Step S1: γ-aminopropyltriethoxysilane and phenyltrimethoxysilane are hydrolyzed to prepare hyperbranched polysiloxane;

[0012] Step S2: Add deionized water and ethanol to the hyperbranched polysiloxane, stir at room temperature for 5 min, heat to 60℃, add glutaraldehyde, stir and disperse for 15 min, add sodium borohydride, continue stirring for 3 h, cool to 20℃, stir for 30 min, add carbon disulfide, continue stirring and react for 30 min to obtain a mixed solution, add ethanol and water to the mixed solution and wash 3 times to obtain a modified silane solution.

[0013] Further, in step S2, the ratio of the amount of hyperbranched polysiloxane, deionized water, ethanol, glutaraldehyde, sodium borohydride and carbon disulfide is 20g:200mL:150mL:2g:2.5g:6g.

[0014] Furthermore, the preparation process of the hyperbranched polysiloxane:

[0015] Step S11: Add γ-aminopropyltriethoxysilane, methanol and tetrahydrofuran to phenyltrimethoxysilane, stir at room temperature for 5 min, heat to 55-60℃, continue stirring for 15 min, add hydrochloric acid to adjust the pH to 5.0-5.4, stir at constant temperature for 3 h, then add sodium bicarbonate to adjust the pH to 7.2-7.4, remove solvent and water by rotary evaporation to obtain hyperbranched polysiloxane.

[0016] Further, in step S11, the ratio of phenyltrimethoxysilane, γ-aminopropyltriethoxysilane, methanol and tetrahydrofuran is 0.1 mol: 0.2 mol: 100 mL: 50 mL.

[0017] Furthermore, the roughening, curing, and passivation processes:

[0018] Roughening: The pretreated copper film is subjected to electrodeposition roughening treatment. The roughening solution formula is: copper sulfate 40 g / L; concentrated sulfuric acid 40 mL / L; sodium tungstate 0.1 g / L; stannous sulfate 1 g / L. Electrodeposition conditions: current density 9-12 A / dm³. 2 Temperature 20-40℃; Time 8-12s; after treatment, a roughened copper film is obtained.

[0019] Curing: The roughened copper film is subjected to electrodeposition curing treatment. The curing solution formula is: zinc sulfate 70 g / L; nickel sulfate 27 g / L; potassium antimony tartrate 3 g / L. Electrodeposition conditions: current density 3-4 A / dm³. 2 The time is 20-25 seconds, the temperature is 30-45℃, and a cured copper film is obtained after the treatment.

[0020] Passivation: The cured copper film is passivated by electrodeposition. The passivation solution formula is: sodium molybdate 8 g / L; phytic acid 2 mL / L; electrodeposition conditions: current density 0.2 A / dm³. 2 The electrodeposition time was 10s, and a passivated copper film was obtained after the treatment.

[0021] Furthermore, the pretreatment process of the copper film:

[0022] The copper film is subjected to alkaline washing and degreasing for 2 minutes, then rinsed with deionized water for 1 minute, followed by acid washing for 30 seconds, then rinsed with deionized water for 1 minute, and finally dried to complete the pretreatment of the copper film.

[0023] Furthermore, the alkaline washing includes an alkaline washing solution, the composition of which is: 1.2%-1.5% NaOH, 4%-6% Na2CO3, 4%-6% Na3PO4, 1%-1.2% Na2SiO3, with the balance being deionized water.

[0024] Furthermore, the pickling includes a pickling solution, the composition of which is: 1% H2SO4, 1.5%-2% Na2S2O8, and the balance being deionized water.

[0025] The beneficial effects of this invention are:

[0026] The copper film treatment process in this invention includes pretreatment, roughening, curing, passivation, and surface silicon oxidation. First, the pretreatment process removes oil through alkaline washing and removes dirt and oxide film through acid washing. The roughening and curing processes are used to deposit a uniform and dense layer of copper nodule particles on the surface of the copper film, increasing the specific surface area of ​​the copper film. At the same time, it improves the adhesion between the copper film and the modified silane solvent, thereby helping to improve the oxidation resistance of the copper film. The passivation treatment can improve the corrosion resistance of the copper film and help improve its oxidation resistance.

[0027] In the process of silicon oxidation treatment of copper film surface, the present invention prepares a modified silane solution. First, γ-aminopropyltriethoxysilane and phenyltrimethoxysilane are used as siloxane monomers. After hydrolysis, hyperbranched polysiloxane is prepared. Then, carbon disulfide is grafted onto the hyperbranched polysiloxane. The hyperbranched structure, together with the C=N double bond formed by glutaraldehyde and the disulfoamino structure formed by carbon disulfide, tightly chelates the siloxane monomer and the surface of the metallic copper film. When the siloxane monomer structure and the organic functional group are hydrolyzed, silanol is generated, which combines with inorganic substances to form siloxane. Finally, a monomolecular film is generated on the surface of the copper film, which has the ability to isolate oxidation and improve the oxidation resistance of the copper film. Attached Figure Description

[0028] The invention will now be further described with reference to the accompanying drawings.

[0029] Figure 1These are the polarization curves of the high-performance copper films in Examples 4-6 and Comparative Examples 1-4 of this invention; Detailed Implementation

[0030] The technical solutions of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0031] Example 1

[0032] Preparation of modified silane solution:

[0033] Step S1: Add 0.2 mol γ-aminopropyltriethoxysilane, 100 mL methanol and 50 mL tetrahydrofuran to 0.1 mol phenyltrimethoxysilane, stir at room temperature for 5 min, heat to 55 °C, continue stirring for 15 min, add hydrochloric acid to adjust the pH to 5.0-5.4, stir at constant temperature for 3 h, then add sodium bicarbonate to adjust the pH to 7.2, remove solvent and water by rotary evaporation to obtain hyperbranched polysiloxane;

[0034] Step S2: Add 200 mL of deionized water and 150 mL of ethanol to 20 g of hyperbranched polysiloxane, stir at room temperature for 5 min, heat to 60 °C, add 2 g of glutaraldehyde, stir and disperse for 15 min, add 2.5 g of sodium borohydride, continue stirring for 3 h, cool to 20 °C, stir for 30 min, add 6 g of carbon disulfide, continue stirring and react for 30 min to obtain a mixed solution, add ethanol and water to the mixed solution and wash 3 times to obtain a modified silane solution.

[0035] Example 2

[0036] Preparation of modified silane solution:

[0037] Step S1: Add 0.2 mol γ-aminopropyltriethoxysilane, 100 mL methanol and 50 mL tetrahydrofuran to 0.1 mol phenyltrimethoxysilane, stir at room temperature for 5 min, heat to 58 °C, continue stirring for 15 min, add hydrochloric acid to adjust the pH to 5.0-5.4, stir at constant temperature for 3 h, then add sodium bicarbonate to adjust the pH to 7.3, remove solvent and water by rotary evaporation to obtain hyperbranched polysiloxane;

[0038] Step S2: Add 200 mL of deionized water and 150 mL of ethanol to 20 g of hyperbranched polysiloxane, stir at room temperature for 5 min, heat to 60 °C, add 2 g of glutaraldehyde, stir and disperse for 15 min, add 2.5 g of sodium borohydride, continue stirring for 3 h, cool to 20 °C, stir for 30 min, add 6 g of carbon disulfide, continue stirring and react for 30 min to obtain a mixed solution, add ethanol and water to the mixed solution and wash 3 times to obtain a modified silane solution.

[0039] Example 3

[0040] Preparation of modified silane solution:

[0041] Step S1: Add 0.2 mol γ-aminopropyltriethoxysilane, 100 mL methanol and 50 mL tetrahydrofuran to 0.1 mol phenyltrimethoxysilane, stir at room temperature for 5 min, heat to 60 °C, continue stirring for 15 min, add hydrochloric acid to adjust the pH to 5.0-5.4, stir at constant temperature for 3 h, then add sodium bicarbonate to adjust the pH to 7.4, remove solvent and water by rotary evaporation to obtain hyperbranched polysiloxane;

[0042] Step S2: Add 200 mL of deionized water and 150 mL of ethanol to 20 g of hyperbranched polysiloxane, stir at room temperature for 5 min, heat to 60 °C, add 2 g of glutaraldehyde, stir and disperse for 15 min, add 2.5 g of sodium borohydride, continue stirring for 3 h, cool to 20 °C, stir for 30 min, add 6 g of carbon disulfide, continue stirring and react for 30 min to obtain a mixed solution, add ethanol and water to the mixed solution and wash 3 times to obtain a modified silane solution.

[0043] Example 4

[0044] A high-performance copper film processing technology includes the following steps: pretreatment, roughening, curing, passivation, and silanization of the copper film.

[0045] (1) Pretreatment: The copper film (thickness 80μm) was degreased by alkaline washing for 2min, then the surface of the copper film was rinsed with deionized water for 1min, then the surface of the copper film was acid-washed for 30s, then rinsed with deionized water for 1min, and dried to complete the pretreatment of the copper film.

[0046] The alkaline washing process includes an alkaline washing solution, which consists of 1.2% NaOH, 4% Na2CO3, 4% Na3PO4, 1% Na2SiO3, with the remainder being deionized water. The acid washing process includes an acid washing solution, which consists of 1% H2SO4, 1.5% Na2S2O8, with the remainder being deionized water.

[0047] (2) Roughening: The pretreated copper film was subjected to electrodeposition roughening treatment. The roughening solution formula was: copper sulfate 40 g / L; concentrated sulfuric acid 40 mL / L; sodium tungstate 0.1 g / L; stannous sulfate 1 g / L. The electrodeposition conditions were: current density 9 A / dm³. 2 Temperature 20℃; Time 8s; Roughened copper film obtained after treatment.

[0048] (3) Curing: The roughened copper film is subjected to electrodeposition curing treatment. The curing solution formula is: zinc sulfate 70 g / L; nickel sulfate 27 g / L; potassium antimony tartrate 3 g / L. The electrodeposition conditions are: current density 3 A / dm³. 2 The process takes 20 seconds and takes 30°C to obtain a cured copper film.

[0049] (4) Passivation: The cured copper film is subjected to electrodeposition passivation treatment. The passivation solution formula is: sodium molybdate 8 g / L; phytic acid 2 mL / L; electrodeposition conditions: current density of 0.2 A / dm³. 2 The electrodeposition time was 10s, and a passivated copper film was obtained after the treatment.

[0050] (5) Silanization: The passivated copper film is immersed in the modified silane solution prepared in Example 1 for coating, and then taken out and cured at 80°C for 0.5h to complete the high-performance copper film processing technology.

[0051] Example 5

[0052] (1) Pretreatment: The copper film (thickness 80μm) was degreased by alkaline washing for 2min, then the surface of the copper film was rinsed with deionized water for 1min, then the surface of the copper film was acid-washed for 30s, then rinsed with deionized water for 1min, and dried to complete the pretreatment of the copper film.

[0053] The alkaline washing process includes an alkaline washing solution, which consists of 1.4% NaOH, 5% Na2CO3, 5% Na3PO4, 1.1% Na2SiO3, with the remainder being deionized water. The acid washing process includes an acid washing solution, which consists of 1% H2SO4, 1.7% Na2S2O8, with the remainder being deionized water.

[0054] (2) Roughening: The pretreated copper film is subjected to electrodeposition roughening treatment. The roughening solution formula is: copper sulfate 40 g / L; concentrated sulfuric acid 40 mL / L; sodium tungstate 0.1 g / L; stannous sulfate 1 g / L. The electrodeposition conditions are: current density 10 A / dm³. 2 Temperature 30℃; Time 10s; after treatment, a roughened copper film is obtained.

[0055] (3) Curing: The roughened copper film is subjected to electrodeposition curing treatment. The curing solution formula is: zinc sulfate 70 g / L; nickel sulfate 27 g / L; potassium antimony tartrate 3 g / L; electrodeposition conditions: current density 3.5 A / dm³ 2The treatment time was 22 seconds and the temperature was 40℃. A cured copper film was obtained after the treatment.

[0056] (4) Passivation: The cured copper film is subjected to electrodeposition passivation treatment. The passivation solution formula is: sodium molybdate 8 g / L; phytic acid 2 mL / L; electrodeposition conditions: current density of 0.2 A / dm³. 2 The electrodeposition time was 10s, and a passivated copper film was obtained after the treatment.

[0057] (5) Silanization: The passivated copper film is immersed in the modified silane solution prepared in Example 2 for coating, and then placed at 110°C for 2 hours to complete the high-performance copper film processing.

[0058] Example 6

[0059] (1) Pretreatment: The copper film (thickness 80μm) was degreased by alkaline washing for 2min, then the surface of the copper film was rinsed with deionized water for 1min, then the surface of the copper film was acid-washed for 30s, then rinsed with deionized water for 1min, and dried to complete the pretreatment of the copper film.

[0060] The alkaline washing process includes an alkaline washing solution, which consists of 1.5% NaOH, 6% Na2CO3, 6% Na3PO4, 1.2% Na2SiO3, with the remainder being deionized water. The acid washing process includes an acid washing solution, which consists of 1% H2SO4, 2% Na2S2O8, with the remainder being deionized water.

[0061] (2) Roughening: The pretreated copper film was subjected to electrodeposition roughening treatment. The roughening solution formula was: copper sulfate 40 g / L; concentrated sulfuric acid 40 mL / L; sodium tungstate 0.1 g / L; stannous sulfate 1 g / L. The electrodeposition conditions were: current density 12 A / dm³. 2 Temperature 40℃; Time 12s; A roughened copper film was obtained after treatment.

[0062] (3) Curing: The roughened copper film is subjected to electrodeposition curing treatment. The curing solution formula is: zinc sulfate 70g / L; nickel sulfate 27g / L; potassium antimony tartrate 3g / L; electrodeposition conditions: current density 4A / dm³. 2 The treatment time was 25 seconds and the temperature was 45℃. After treatment, a cured copper film was obtained.

[0063] (4) Passivation: The cured copper film is subjected to electrodeposition passivation treatment. The passivation solution formula is: sodium molybdate 8 g / L; phytic acid 2 mL / L; electrodeposition conditions: current density of 0.2 A / dm³. 2 The electrodeposition time was 10s, and a passivated copper film was obtained after the treatment.

[0064] (5) Silanization: The passivated copper film is immersed in the modified silane solution prepared in Example 3 for coating, and then placed at 120°C for 2.5h to complete the high-performance copper film processing.

[0065] Comparative Example 1

[0066] Comparative Example 1 serves as the control group for Example 4. Step S2 in the preparation process of the modified silane solution prepared in Example 1 during the silanization of Example 4 is removed. That is, the modified silane solution is the hyperbranched polysiloxane prepared in step S1 of Example 1. The specific processing technology for the high-performance copper film is as follows:

[0067] Preparation of modified silane solution:

[0068] Step S1: Add 0.2 mol γ-aminopropyltriethoxysilane, 100 mL methanol and 50 mL tetrahydrofuran to 0.1 mol phenyltrimethoxysilane. Stir at room temperature for 5 min, heat to 55 °C, and continue stirring for 15 min. Add hydrochloric acid to adjust the pH to 5.0-5.4, stir at constant temperature for 3 h, then add sodium bicarbonate to adjust the pH to 7.2. Remove the solvent and water by rotary evaporation to obtain the modified silane solution.

[0069] A high-performance copper film processing technology includes the following steps: pretreatment, roughening, curing, passivation, and silanization of the copper film.

[0070] (1) Pretreatment: The copper film (thickness 80μm) was degreased by alkaline washing for 2min, then the surface of the copper film was rinsed with deionized water for 1min, then the surface of the copper film was acid-washed for 30s, then rinsed with deionized water for 1min, and dried to complete the pretreatment of the copper film.

[0071] The alkaline washing process includes an alkaline washing solution, which consists of 1.2% NaOH, 4% Na2CO3, 4% Na3PO4, 1% Na2SiO3, with the remainder being deionized water.

[0072] Pickling includes pickling solution, which consists of 1% H2SO4, 1.5% Na2S2O8, and the remainder is deionized water.

[0073] (2) Roughening: The pretreated copper film was subjected to electrodeposition roughening treatment. The roughening solution formula was: copper sulfate 40 g / L; concentrated sulfuric acid 40 mL / L; sodium tungstate 0.1 g / L; stannous sulfate 1 g / L. The electrodeposition conditions were: current density 9 A / dm³. 2 Temperature 20℃; Time 8s; Roughened copper film obtained after treatment.

[0074] (3) Curing: The roughened copper film is subjected to electrodeposition curing treatment. The curing solution formula is: zinc sulfate 70g / L; nickel sulfate 27g / L; potassium antimony tartrate 3g / L; electrodeposition conditions: current density 3A / dm³. 2 The treatment time was 20 seconds and the temperature was 30°C. After treatment, a solidified copper film was obtained.

[0075] (4) Passivation: The cured copper film is subjected to electrodeposition passivation treatment. The passivation solution formula is: sodium molybdate 8 g / L; phytic acid 2 mL / L; electrodeposition conditions: current density of 0.2 A / dm³. 2 The electrodeposition time was 10s, and a passivated copper film was obtained after the treatment.

[0076] (5) Silanization: The passivated copper film is immersed in the modified silane solution prepared above for coating, and then taken out and cured at 80°C for 0.5h to complete the high-performance copper film processing technology.

[0077] Comparative Example 2

[0078] Comparative Example 2 served as the control group for Example 5. The modified silane solution in the silanization process of Example 5 was replaced with silane coupling agent K-550, while the remaining surface treatment processes remained unchanged, thus completing the high-performance copper film treatment process.

[0079] Comparative Example 3

[0080] Comparative Example 3 served as the control group for Example 5. The modified silane solution in the silanization process of Example 5 was replaced with silane coupling agent K-560, while the remaining surface treatment processes remained unchanged, thus completing the high-performance copper film treatment process.

[0081] Comparative Example 4

[0082] Comparative Example 4 served as the control group for Example 6. The silanization process of Example 6 was removed, while the remaining surface treatment processes remained unchanged, thus completing the high-performance copper film processing technology.

[0083] The copper films finally prepared in Examples 4-6 and Comparative Examples 1-4 were subjected to performance tests. The performance test process is as follows, and the results are shown in Table 1 and Appendix. Figure 1 As shown:

[0084] High-temperature oxidation test: The test was conducted in a DHG-9075A forced-air drying oven manufactured by Shanghai Aozhen Instrument Manufacturing Co., Ltd. The sample was suspended in the 240℃ forced-air drying oven with stainless steel clamps. After 30 minutes, the copper foil surface was visually inspected for oxidation and discoloration.

[0085] Electrode potentiodynamic polarization detection: Leave 1cm of copper film. 2 The working electrode surface was coated with epoxy resin, and the remaining portion was encapsulated. The three-electrode system consisted of a copper film working electrode, a platinum auxiliary electrode, and a saturated calomel reference electrode. The potential range was ±0.1V, the scan rate was 5mV / s, and the perturbation potential was 10mV. All tests were performed using an RST5O30F electrochemical workstation in a 3.5% (mass fraction) NaCl solution. Polarization curves are attached. Figure 1 As shown.

[0086] Table 1

[0087]

[0088]

[0089] As can be seen from Table 1, the high-performance copper film prepared according to the processing technology of Examples 4-6 of the present invention has better anti-oxidation performance. The copper foil will not be oxidized and will not change color after being baked at 240°C for 30 minutes. However, changing the type of additives in Comparative Examples 1-4 will significantly affect the anti-oxidation performance of the copper film, and significantly reduce the anti-oxidation performance.

[0090] From the appendix Figure 1 It can be seen that, compared with the blank control of Comparative Example 4, the corrosion potential of the copper film treated by the process of Example 3 shifts positively. The silanization treatment of Example 3 can be adsorbed on the surface of the copper film, thereby forming a dense protective film that blocks the copper foil from contacting the corrosive medium, thus achieving the effect of anti-oxidation. The corrosion current density of Examples 1-3 is comparable to and much greater than that of Comparative Examples 1-3. Therefore, the high-performance copper film prepared according to the processing technology of Examples 4-6 of this invention has better anti-oxidation performance.

[0091] It should be noted that, in this document, terms such as “comprising,” “including,” or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0092] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A high-performance copper film processing technology, characterized in that, Includes the following steps: After the pretreated copper film is roughened, cured and passivated, a passivated copper film is obtained. The passivated copper film is then subjected to surface silanization treatment: the passivated copper film is immersed in a modified silane solution for coating, taken out and placed at 80-120℃ for 0.5-2.5h for curing, thus completing the processing technology of high-performance copper film. The modified silane solution is prepared by the following steps: Step S1: γ-aminopropyltriethoxysilane and phenyltrimethoxysilane are hydrolyzed to prepare hyperbranched polysiloxane; Step S2: Add deionized water and ethanol to the hyperbranched polysiloxane, stir at room temperature for 5 min, heat to 60℃, add glutaraldehyde, stir and disperse for 15 min, add sodium borohydride, continue stirring for 3 h, cool to 20℃, stir for 30 min, add carbon disulfide, continue stirring and react for 30 min to obtain a mixed solution, add ethanol and water to the mixed solution and wash 3 times to obtain a modified silane solution.

2. The high-performance copper film processing technology according to claim 1, characterized in that, The ratio of the hyperbranched polysiloxane, deionized water, ethanol, glutaraldehyde, sodium borohydride and carbon disulfide used in step S2 is 20g:200mL:150mL:2g:2.5g:6g.

3. The high-performance copper film processing technology according to claim 1, characterized in that, The preparation process of the hyperbranched polysiloxane: Step S11: Add γ-aminopropyltriethoxysilane, methanol and tetrahydrofuran to phenyltrimethoxysilane, stir at room temperature for 5 min, heat to 55-60℃, continue stirring for 15 min, add hydrochloric acid to adjust the pH to 5.0-5.4, stir at constant temperature for 3 h, then add sodium bicarbonate to adjust the pH to 7.2-7.4, remove solvent and water by rotary evaporation to obtain hyperbranched polysiloxane.

4. The high-performance copper film processing technology according to claim 3, characterized in that, The ratio of phenyltrimethoxysilane, γ-aminopropyltriethoxysilane, methanol and tetrahydrofuran used in step S11 is 0.1 mol: 0.2 mol: 100 mL: 50 mL.

5. The high-performance copper film processing technology according to claim 1, characterized in that, The roughening, solidification, and passivation processes are as follows: Roughening: The pretreated copper film is subjected to electrodeposition roughening treatment. The roughening solution formula is: copper sulfate 40 g / L; concentrated sulfuric acid 40 mL / L; sodium tungstate 0.1 g / L; stannous sulfate 1 g / L. Electrodeposition conditions: current density 9-12 A / dm³. 2 ; Temperature 20-40℃; Time 8-12s; after treatment, a roughened copper film is obtained. Curing: The roughened copper film is subjected to electrodeposition curing treatment. The curing solution formula is: zinc sulfate 70 g / L; nickel sulfate 27 g / L; potassium antimony tartrate 3 g / L. Electrodeposition conditions: current density 3-4 A / dm³. 2 The time is 20-25 seconds, the temperature is 30-45℃, and a cured copper film is obtained after the treatment. Passivation: The cured copper film is passivated by electrodeposition. The passivation solution formula is: sodium molybdate 8 g / L; phytic acid 2 mL / L; electrodeposition conditions: current density 0.2 A / dm³. 2 The electrodeposition time was 10s, and a passivated copper film was obtained after the treatment.

6. The high-performance copper film processing technology according to claim 1, characterized in that, The pretreatment process of the copper film: The copper film is subjected to alkaline washing and degreasing for 2 minutes, then rinsed with deionized water for 1 minute, followed by acid washing for 30 seconds, then rinsed with deionized water for 1 minute, and finally dried to complete the pretreatment of the copper film.

7. The high-performance copper film processing technology according to claim 6, characterized in that, The alkaline washing includes an alkaline washing solution, the composition of which is: 1.2%-1.5% NaOH, 4%-6% Na2CO3, 4%-6% Na3PO4, 1%-1.2% Na2SiO3, with the balance being deionized water.

8. The high-performance copper film processing technology according to claim 6, characterized in that, The pickling includes a pickling solution, the composition of which is: 1% H2SO4, 1.5%-2% Na2S2O8, and the balance being deionized water.

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