A test system and method for an insulated gate bipolar transistor

Abstract

The application provides a kind of insulated gate bipolar transistor test system and method, it is related to insulated gate bipolar transistor test technical field, the test system of insulated gate bipolar transistor includes oscilloscope, drive circuit, first power supply, insulated gate bipolar transistor, first diode, load circuit, through drive circuit, through drive circuit is responded to control instruction, control insulated gate bipolar transistor conduction or turn off, first diode protects insulated gate bipolar transistor from being voltage breakdown when turn off, first power supply under the condition that insulated gate bipolar transistor is conducted, power supply is to load circuit, oscilloscope gathers the current signal of insulated gate bipolar transistor and shows, for test personnel carries out analysis, obtains the matching result of the component of drive circuit and insulated gate bipolar transistor, through real matching test, reduce the error of matching test result, solve the problem that in prior art through simulation software carries out simulation matching test, resulting in big error of matching test result.

Description

Technical Field

[0001] This application belongs to the field of insulated gate bipolar transistor (IGBT) testing technology, specifically relating to a testing system and method for IGBTs. Background Technology

[0002] Before packaging the components of the drive circuit (including the drive chip, etc.) and the insulated-gate bipolar transistor (IGBT) into the intelligent power module (IPM), it is necessary to perform simulated matching tests on the components of the drive circuit and the insulated-gate bipolar transistor, which requires an insulated-gate bipolar transistor test system.

[0003] In prior art, testers use simulation software to perform simulated matching tests on the components of the drive circuit and the insulated gate bipolar transistor.

[0004] In the process of developing this application, the inventors discovered that the prior art has at least the following problems: because the testers use simulation software to perform simulated matching tests on the components of the drive circuit and the insulated gate bipolar transistor, the matching test results have large errors. Summary of the Invention

[0005] This application aims to provide a testing system and method for insulated gate bipolar transistors (IGBTs), which at least solves the problem in the prior art where the matching test results are large due to the testers using simulation software to perform simulated matching tests on the components of the driving circuit and the IGBT.

[0006] To solve the above-mentioned technical problems, this application is implemented as follows:

[0007] In a first aspect, embodiments of this application provide a testing system for an insulated-gate bipolar transistor (IGBT). The system includes: an oscilloscope, a driving circuit, a first power supply, an IGBT, a first diode, and a load circuit. The oscilloscope is connected to the driving circuit and the IGBT. The driving circuit is connected to the IGBT. The IGBT is connected in parallel with the first diode. The IGBT is connected in series with the load circuit. The first power supply is connected to both the IGBT and the load circuit.

[0008] The driving circuit is used to control the insulated gate bipolar transistor to be turned on or off in response to a control command.

[0009] The first diode is used to protect the insulated gate bipolar transistor from voltage breakdown when it is turned off;

[0010] The first power supply is used to supply power to the load circuit when the insulated gate bipolar transistor is turned on;

[0011] The oscilloscope is used to acquire and display the current signal of the insulated gate bipolar transistor.

[0012] Secondly, embodiments of this application provide a testing method for an insulated-gate bipolar transistor (IGBT), applied to the IGBT testing system described in the first aspect, the method comprising:

[0013] The drive circuit responds to control commands to control the insulated gate bipolar transistor (IGBT) to turn on or off; wherein, when the IGBT is on, power is supplied to the load circuit connected in series with the IGBT; and a first diode connected in parallel with the IGBT protects the IGBT from voltage breakdown when it is off.

[0014] The current signal of the insulated gate bipolar transistor is collected and displayed.

[0015] In this embodiment, the test system for an insulated-gate bipolar transistor (IGBT) includes an oscilloscope, a driving circuit, a first power supply, an IGBT, a first diode, and a load circuit. The driving circuit responds to control commands to turn the IGBT on or off. The first diode protects the IGBT from voltage breakdown when it is off. The first power supply supplies power to the load circuit when the IGBT is on. The oscilloscope acquires and displays the current signal of the IGBT for analysis by testers to obtain the matching results between the components of the driving circuit and the IGBT. Compared to using simulation software to perform simulated matching tests on the components of the driving circuit and the IGBT, the actual matching test using the test system in this embodiment reduces the error in the matching test results and solves the problem of large errors in the matching test results caused by testers using simulation software to perform simulated matching tests on the components of the driving circuit and the IGBT in the prior art. Attached Figure Description

[0016] In the attached diagram:

[0017] Figure 1 This is a schematic diagram of a test system for an insulated gate bipolar transistor provided in an embodiment of this application;

[0018] Figure 2 This is a flowchart illustrating the steps of a testing method for an insulated gate bipolar transistor provided in an embodiment of this application;

[0019] Figure 3 This is a schematic diagram of a test system for an insulated gate bipolar transistor provided in an embodiment of this application;

[0020] Figure 4 This is another schematic diagram of the test system for the insulated gate bipolar transistor provided in the embodiments of this application;

[0021] Figure 5 This is a schematic diagram of the current value of an insulated gate bipolar transistor as a function of time, provided in an embodiment of this application.

[0022] Figure 6 This is a schematic diagram showing the change of current value over time for another insulated gate bipolar transistor provided in this application embodiment. Detailed Implementation

[0023] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0024] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and not to describe a specific order or sequence. It should be understood that such use of data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first," "second," etc., are generally of the same class and the number of objects is not limited; for example, a first object can be one or more. Furthermore, in the specification and claims, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0025] Reference Figure 1This application provides a testing system for an insulated-gate bipolar transistor (IGBT). The system includes: an oscilloscope 20, a driving circuit 30, a first power supply 60, an IGBT 10, a first diode 40, and a load circuit 50. The oscilloscope 20 is connected to the driving circuit 30 and the IGBT 10. The driving circuit 30 is connected to the IGBT 10. The IGBT 10 is connected in parallel with the first diode 40. The IGBT 10 is connected in parallel with the load circuit 50. The circuit 50 is connected in series, and the first power supply 60 is connected to both the insulated gate bipolar transistor 10 and the load circuit 50. The driving circuit 30 is used to control the insulated gate bipolar transistor 10 to turn on or off in response to a control command. The first diode 40 is used to protect the insulated gate bipolar transistor 10 from voltage breakdown when it is turned off. The first power supply 60 is used to supply power to the load circuit 50 when the insulated gate bipolar transistor 10 is on. The oscilloscope 20 is used to acquire and display the current signal of the insulated gate bipolar transistor 10.

[0026] Specifically, in some embodiments, the sampling rate of the oscilloscope 20 is greater than or equal to a preset first sampling rate threshold, for example, the first sampling rate threshold is 6.25 GS / S; the bandwidth of the oscilloscope 20 is greater than or equal to a preset first bandwidth threshold, for example, the first bandwidth threshold is 1 GHz; and the first diode 40 can be a diode.

[0027] It should be noted that the current signal displayed by the oscilloscope 20 is the curve of the current value of the insulated gate bipolar transistor 10 changing over time.

[0028] In this embodiment, the insulated-gate bipolar transistor (IGBT) test system includes an oscilloscope, a driving circuit, a first power supply, an IGBT, a first diode, and a load circuit. The driving circuit responds to control commands to turn the IGBT on or off. The first diode protects the IGBT from voltage breakdown when it is off. The first power supply supplies power to the load circuit when the IGBT is on. The oscilloscope acquires and displays the current signal of the IGBT for analysis by testers to obtain the matching results between the driving circuit components and the IGBT. Compared to using simulation software to perform simulated matching tests on the driving circuit components and the IGBT, the real matching test using the IGBT test system in this embodiment reduces the error in the matching test results and solves the problem of large errors in the matching test results caused by testers using simulation software to perform simulated matching tests on the driving circuit components and the IGBT in the prior art.

[0029] Optional, refer to Figure 3 In some embodiments, the driving circuit 30 includes a second power supply 33, a signal generator 31, a driving chip 32, a first capacitor C1, a first resistor R1, a second resistor R2, a second diode D2, and a third diode D3; the gate of the insulated-gate bipolar transistor 10 is connected to the first terminal of the first resistor R1, the second terminal of the first resistor R1 is connected to the anode of the second diode D2, and the cathode of the second diode D2 is connected to the first terminal H0 of the driving chip 32; the gate of the insulated-gate bipolar transistor 10 is connected to the first terminal of the second resistor R2, and the second resistor R1... The second terminal of 2 is connected to the negative terminal of the third diode D3, and the positive terminal of the third diode D3 is connected to the first terminal H0 of the driver chip 32; the second terminal VS of the driver chip 32 is connected to the emitter of the insulated gate bipolar transistor 10, the second terminal VS of the driver chip 32 is connected to the first terminal of the first capacitor C1, and the third terminal VB of the driver chip 32 is connected to the second terminal of the first capacitor C1; the signal generator 31 is connected to the driver chip 32; the oscilloscope 20 is connected to the signal generator 31; and the second power supply 33 is connected to the driver chip 32.

[0030] Specifically, in some embodiments, the components of the driving circuit 30 may include a driving chip 32, a first resistor R1, a second resistor R2, a first diode 40, etc.

[0031] In the intelligent power module, when the first driver chip 32 controls the conduction or cutoff of the upper three bridges (i.e., the three upper bridges), and the second driver chip 32 controls the conduction or cutoff of the lower three bridges (i.e., the three lower bridges), the driver chip 32 in the test system for insulated gate bipolar transistors provided in this application embodiment can be the first driver chip 32. In this case, the insulated gate bipolar transistor 10 in the test system for insulated gate bipolar transistors can be the insulated gate bipolar transistor 10 corresponding to one of the upper bridges. Alternatively, the driver chip 32 in the test system for insulated gate bipolar transistors provided in this application embodiment can be the second driver chip 32. In this case, the insulated gate bipolar transistor 10 in the test system for insulated gate bipolar transistors can be the insulated gate bipolar transistor 10 corresponding to one of the lower bridges.

[0032] In a smart power module comprising three driver chips 32, each driver chip 32 controlling the on / off state of a corresponding upper bridge and a lower bridge, the insulated gate bipolar transistor 10 in the test system for the insulated gate bipolar transistor provided in this application embodiment can be either an insulated gate bipolar transistor 10 of an upper bridge corresponding to the driver chip 32 or an insulated gate bipolar transistor 10 of a lower bridge corresponding to the driver chip 32.

[0033] It should be noted that, through the test system for the insulated gate bipolar transistor provided in this application embodiment, the actual matching test of the components of the driving circuit 30 and the insulated gate bipolar transistor 10 is performed, and the current signal of the insulated gate bipolar transistor 10 during the conduction and turn-off process is obtained, so that the test personnel can analyze it and obtain the matching test results of the components of the driving circuit 30 and the insulated gate bipolar transistor 10.

[0034] Specifically, in some embodiments, based on the curve of the current value of the insulated gate bipolar transistor 10 changing over time displayed by the oscilloscope 20, the amount of current reduction and the time taken for the current value to decrease are obtained. If the difference between the time taken for the current value to decrease and the standard decrease time (e.g., 35 nanoseconds) is less than a first difference threshold (e.g., 10 nanoseconds), the matching test result between the components of the driving circuit 30 and the insulated gate bipolar transistor 10 is determined to be that during the process of the driving circuit 30 controlling the insulated gate bipolar transistor 10 to turn off, the components of the driving circuit 30 and the insulated gate bipolar transistor 10 are matched. Matching of transistor 10: Based on the curve of the current value of the insulated gate bipolar transistor 10 changing with time displayed on the oscilloscope 20, the rise in current value and the time taken for the current value to rise are obtained. If the difference between the time taken for the current value to rise and the standard rise time (e.g., 110 nanoseconds) is less than the second difference threshold (e.g., 10 nanoseconds), it is determined that the matching test result of the components of the drive circuit 30 and the insulated gate bipolar transistor 10 is that the components of the drive circuit 30 and the insulated gate bipolar transistor 10 are matched during the process of the drive circuit 30 controlling the insulated gate bipolar transistor 10 to be turned on.

[0035] Figure 5 The test system for the insulated gate bipolar transistor (IGBT) provided in this application provides a schematic diagram of the current value of the IGBT 10 changing over time as the oscilloscope 20 displays the process of controlling the IGBT 10 to conduct. A represents the increase in current value during the process of controlling the IGBT 10 to conduct, and B represents the duration of current change during the process of controlling the IGBT 10 to conduct. The value obtained by calculating A / B can represent the conduction rate of the IGBT 10.

[0036] Through the test system of the insulated gate bipolar transistor provided in the embodiments of this application, the experiment of actual matching test of the components of the driving circuit 30 and the insulated gate bipolar transistor 10 yielded A of 39.69 amperes, B of 113.40 nanoseconds, and A / B of 0.35 gigaamperes per second.

[0037] After the components of the drive circuit 30 and the insulated gate bipolar transistor 10 are packaged into the smart power module, based on the curve of the current value of the insulated gate bipolar transistor 10 in the smart power module changing with time during the conduction process obtained by the test, A is 40.32 amperes, B is 112.00 nanoseconds, and A / B is 0.36 gigaamperes per second.

[0038] Since there is a 1.4 nanosecond difference between 113.40 nanoseconds and 112.00 nanoseconds, and a 0.01 gigaampere-second difference between 0.35 gigaampere-seconds and 0.36 gigaampere-seconds, the matching test results of the components of the drive circuit 30 and the insulated gate bipolar transistor 10 obtained by the test system of the insulated gate bipolar transistor provided in this application embodiment (during the process of controlling the insulated gate bipolar transistor 10 to conduct) can well reflect the matching status of the components of the drive circuit 30 and the insulated gate bipolar transistor 10 after the components of the drive circuit 30 and the insulated gate bipolar transistor 10 are packaged into the smart power module (during the process of controlling the insulated gate bipolar transistor 10 to conduct).

[0039] Figure 6 The test system for the insulated gate bipolar transistor (IGBT) provided in this application provides a schematic diagram of the current value of the IGBT 10 changing over time, displayed by the oscilloscope 20 during the process of controlling the IGBT 10 to turn off. C represents the amount of decrease in current value during the process of controlling the IGBT 10 to turn off, and D represents the duration of current change during the process of controlling the IGBT 10 to turn off. The value obtained by calculating C / D can represent the rate at which the IGBT 10 turns off.

[0040] Through the test system of the insulated gate bipolar transistor provided in the embodiments of this application, the experiment of actual matching test of the components of the driving circuit 30 and the insulated gate bipolar transistor 10 yielded C = 39.39 amperes, D = 39 nanoseconds, and C / D = 1.01 gigaamperes per second.

[0041] After the components of the drive circuit 30 and the insulated gate bipolar transistor 10 are packaged into the smart power module, the current value of the insulated gate bipolar transistor 10 in the smart power module during the turn-off process is measured as a function of time, and C is found to be 40.00 amperes, D is 32 nanoseconds, and C / D is 1.25 gigaamperes per second.

[0042] Since there is a 7-nanosecond difference between 39 nanoseconds and 32 nanoseconds, and a 0.24-gigaampere-second difference between 1.01 gigaampere-seconds and 1.25 gigaampere-seconds, the matching test results of the components of the drive circuit 30 and the insulated gate bipolar transistor 10 obtained by the test system of the insulated gate bipolar transistor provided in this application embodiment (during the process of controlling the insulated gate bipolar transistor 10 to turn off) can well reflect the matching status of the components of the drive circuit 30 and the insulated gate bipolar transistor 10 after the components of the drive circuit 30 and the insulated gate bipolar transistor 10 are packaged into the smart power module (during the process of controlling the insulated gate bipolar transistor 10 to turn off).

[0043] The sampling rate of the signal generator 31 is greater than or equal to a preset second sampling rate threshold, for example, the second sampling rate threshold is 1GS / S; the bandwidth of the signal generator 31 is greater than or equal to a preset second bandwidth threshold, for example, the second bandwidth threshold is 50MHz; the signal generator 31 outputs a double pulse signal; the second diode D2 is a diode, and the third diode D3 is a diode; the second power supply 33 can be 15V.

[0044] In this embodiment, since the gate of the insulated gate bipolar transistor 10 is connected to the first end of the first resistor R1, the second end of the first resistor R1 is connected to the anode of the second diode D2, the cathode of the second diode D2 is connected to the first terminal H0 of the driver chip 32, the gate of the insulated gate bipolar transistor 10 is connected to the first end of the second resistor R2, the second end of the second resistor R2 is connected to the cathode of the third diode D3, the anode of the third diode D3 is connected to the first terminal H0 of the driver chip 32, the second terminal VS of the driver chip 32 is connected to the emitter of the insulated gate bipolar transistor 10, the second terminal VS of the driver chip 32 is connected to the first end of the first capacitor C1, the third terminal VB of the driver chip 32 is connected to the second end of the first capacitor C1, the signal generator 31 is connected to the driver chip 32, the oscilloscope 20 is connected to the signal generator 31, and the second power supply 33 is connected to the driver chip 32, the oscilloscope 20 can be connected to the driver circuit 30, and the driver circuit 30 can be connected to the insulated gate bipolar transistor 10.

[0045] Optionally, in some embodiments, the length of the line from the first terminal H0 of the driver chip 32 to the gate of the insulated gate bipolar transistor 10 is less than a first preset threshold.

[0046] It should be noted that the first preset threshold can be 2 centimeters.

[0047] Specifically, refer to Figure 4 In some embodiments, the length of the line from the first terminal H0 of the driver chip 32 to the gate of the insulated gate bipolar transistor 10 is from... Figure 4The length of the line from point X1 through the first resistor R1, the second resistor R2, the second diode D2, and the third diode D3 to point X2.

[0048] In this embodiment, by controlling the length of the line from the first terminal H0 of the driver chip 32 to the gate of the insulated gate bipolar transistor 10 to be less than a first preset threshold, the line connection from the first terminal H0 of the driver chip 32 to the gate of the insulated gate bipolar transistor 10 has a reference standard for line length, which is beneficial to controlling the error of the matching test results.

[0049] Optionally, in some embodiments, the length of the line from the second terminal VS of the driver chip 32 to the emitter of the insulated gate bipolar transistor 10 is less than a second preset threshold.

[0050] It should be noted that the second preset threshold can be 2 centimeters.

[0051] Specifically, refer to Figure 4 In some embodiments, the length of the line from the second terminal VS of the driver chip 32 to the emitter of the insulated gate bipolar transistor 10 is from... Figure 4 The length of the line from point Y1 to point Y2.

[0052] In this embodiment, by controlling the length of the line from the second terminal VS of the driver chip 32 to the emitter of the insulated gate bipolar transistor 10 to be less than a second preset threshold, the line connection from the second terminal VS of the driver chip 32 to the emitter of the insulated gate bipolar transistor 10 has a reference standard for line length, which is beneficial to controlling the error of the matching test results.

[0053] Optionally, in some embodiments, the length of the line from the third terminal VB of the driver chip 32 through the first capacitor C1 to the second terminal VS of the driver chip 32 is less than a third preset threshold.

[0054] It should be noted that the third preset threshold can be 5 centimeters.

[0055] Specifically, refer to Figure 4 In some embodiments, the length of the line from the third terminal VB of the driver chip 32 through the first capacitor C1 to the second terminal VS of the driver chip 32 is from... Figure 4 The length of the line from point Z1, through the first capacitor C1, to point Z2.

[0056] In this embodiment, by controlling the length of the line from the third terminal VB of the driver chip 32 through the first capacitor C1 to the second terminal VS of the driver chip 32 to be less than a third preset threshold, the line connection from the third terminal VB of the driver chip 32 through the first capacitor C1 to the second terminal VS of the driver chip 32 has a reference standard for line length, which is beneficial to controlling the error of the matching test results.

[0057] Optional, refer to Figure 3 In some embodiments, the first capacitor C1 is a bootstrap capacitor; the signal generator 31 is used to output a drive signal in response to a control command; the drive chip 32 is used to control the first terminal H0 of the drive chip 32 to output a high level and the second terminal VS of the drive chip 32 to output a low level when the drive signal is high, so that the insulated gate bipolar transistor 10 is turned on; when the drive signal is low, it controls the first terminal H0 and the second terminal of the drive chip 32 to output a low level, so that the insulated gate bipolar transistor 10 is turned off; the second diode D2 cooperates with the third diode D3 to energize the second resistor R2 and de-energize the first resistor R1 when the insulated gate bipolar transistor 10 is turned on; and to energize the first resistor R1 and de-energize the second resistor R2 when the insulated gate bipolar transistor 10 is turned off; the second power supply 33 is used to supply power to the drive chip 32; the first capacitor C1 is used to maintain a voltage difference between the second terminal VS and the third terminal of the drive chip 32.

[0058] It should be noted that the second power supply 33 supplies power to the driver chip 32 through the power supply terminal VCC of the driver chip 32.

[0059] In this embodiment, the signal generator 31 responds to the control command by outputting a drive signal. When the drive signal is high, the drive chip 32 controls its first terminal H0 to output a high level and its second terminal VS to output a low level, so that the gate voltage of the insulated gate bipolar transistor 10 is higher than the emitter voltage of the insulated gate bipolar transistor 10, and the voltage difference between the gate and emitter of the insulated gate bipolar transistor 10 is greater than or equal to the turn-on voltage, thus turning on the insulated gate bipolar transistor 10. When the drive signal is low, both the first terminal H0 and the second terminal of the drive chip 32 output low levels, so that the gate voltage of the insulated gate bipolar transistor 10 is equal to the insulated gate bipolar transistor voltage. The voltage at the emitter of transistor 10 is less than the turn-on voltage, and the voltage difference between the gate and emitter of insulated-gate bipolar transistor 10 is less than the turn-on voltage, so insulated-gate bipolar transistor 10 is turned off; and the second diode D2 and the third diode D3 cooperate to energize the second resistor R2 and de-energize the first resistor R1 when insulated-gate bipolar transistor 10 is turned on, and to energize the first resistor R1 and de-energize the second resistor R2 when insulated-gate bipolar transistor 10 is turned off. The second power supply 33 supplies power to the driver chip 32, and the first capacitor C1 is used to maintain a voltage difference between the second terminal VS and the third terminal of the driver chip 32, so that the driver circuit 30 responds to the control command to control the insulated-gate bipolar transistor 10 to turn on or off.

[0060] Optional, refer to Figure 3 In some embodiments, the positive terminal CH3 of the signal generator 31 is connected to the positive input terminal HIN of the driver chip 32; the voltage acquisition terminal CH1 of the oscilloscope 20 is connected to the positive terminal CH3 of the signal generator 31; and the current acquisition terminal CH2 of the oscilloscope 20 is connected to the collector of the insulated gate bipolar transistor 10. The negative terminal CH4 of the signal generator 31 is connected to the negative input terminal COM of the driver chip 32. Both the negative terminal CH4 of the signal generator 31 and the negative input terminal COM of the driver chip 32 are connected to the negative terminal of the first power supply 60. Specifically, the signal generator 31 is used to input a drive signal to the positive input terminal HIN of the driver chip 32 through its positive terminal CH3. Specifically, the oscilloscope 20 is used to acquire the drive signal through its voltage acquisition terminal CH1 and to acquire the current signal through its current acquisition terminal CH2.

[0061] Specifically, in some embodiments, the voltage acquisition terminal CH1 of the oscilloscope 20 is a low-voltage probe with a bandwidth greater than or equal to a preset third bandwidth threshold, for example, the third bandwidth threshold is 1 GHz, and the withstand voltage of the low-voltage probe is greater than or equal to a preset first withstand voltage threshold, for example, the first withstand voltage threshold is 300 V; the current acquisition terminal CH2 of the oscilloscope 20 is a current probe with a bandwidth greater than or equal to a preset fourth bandwidth threshold, for example, the fourth bandwidth threshold is 120 MHz; in addition, the oscilloscope 20 also has a high-voltage differential probe, which can be connected to the emitter of an insulated gate bipolar crystal (IGBT) for acquiring the voltage of the IGBT, with a bandwidth greater than or equal to a preset fifth bandwidth threshold, for example, the fifth bandwidth threshold is 200 MHz; and the withstand voltage of the high-voltage differential probe is greater than or equal to a preset second withstand voltage threshold, for example, the second withstand voltage threshold is 1500 V.

[0062] In this embodiment, a drive signal is input to the positive input terminal HIN of the driver chip 32 through the positive terminal CH3 of the signal generator 31, so as to realize the control of the drive circuit 30 to turn on or off the insulated gate bipolar transistor 10. The drive signal is acquired through the voltage acquisition terminal CH1 of the oscilloscope 20, and the current signal is acquired through the current acquisition terminal CH2 of the oscilloscope 20. The oscilloscope 20 displays the current signal for the tester to analyze and obtain the matching result between the components of the drive circuit 30 and the insulated gate bipolar transistor 10.

[0063] Optionally, in some embodiments, the length of the line from the negative input terminal COM of the driver chip 32 to the negative terminal of the first power supply 60 is less than a fourth preset threshold.

[0064] It should be noted that the fourth preset threshold can be 5 centimeters.

[0065] Specifically, refer to Figure 4 In some embodiments, the length of the line from the negative input terminal COM of the driver chip 32 to the negative terminal of the first power supply 60 is from... Figure 4 The length of the line from point P1 to point P2.

[0066] In this embodiment, by controlling the length of the line from the negative input terminal COM of the driver chip 32 to the negative terminal of the first power supply 60 to be less than a fourth preset threshold, the connection of the line from the negative input terminal COM of the driver chip 32 to the negative terminal of the first power supply 60 has a reference standard for the line length, which is beneficial to controlling the error of the matching test results.

[0067] Optional, refer to Figure 3In some embodiments, the load circuit 50 includes an inductive load L and a fourth diode D4; the inductive load L and the fourth diode D4 are connected in parallel, the first terminal of the inductive load L is connected to the emitter of the insulated gate bipolar transistor 10, the second terminal of the inductive load L is connected to the negative terminal of the first power supply 60, and the positive terminal of the first power supply 60 is connected to the collector of the insulated gate bipolar transistor 10; the fourth diode D4 is used to freewheel the inductive load L.

[0068] In this embodiment, an inductive load L is connected in parallel with a fourth diode D4, which is a diode that provides freewheeling for the inductive load L. The first terminal of the inductive load L is connected to the emitter of the insulated-gate bipolar transistor 10, and the second terminal of the inductive load L is connected to the negative terminal of the first power supply 60. The positive terminal of the first power supply 60 is connected to the collector of the insulated-gate bipolar transistor 10, thereby connecting the insulated-gate bipolar transistor 10 and the load circuit 50 in series. The first power supply 60 is used to supply power to the inductive load L when the insulated-gate bipolar transistor 10 is turned on.

[0069] Optional, refer to Figure 3 In some embodiments, the first power supply 60 includes a DC power supply 61 and a second capacitor C2. The first terminal of the second capacitor C2 is connected to the positive terminal of the DC power supply 61, and the second terminal of the second capacitor C2 is connected to the negative terminal of the DC power supply 61. The first terminal of the second capacitor C2 is connected to the collector of the insulated gate bipolar transistor 10, and the second terminal of the second capacitor C2 is connected to the first terminal of the load circuit 50. The second terminal of the load circuit 50 is connected to the emitter of the insulated gate bipolar transistor 10. The DC power supply 61 is used to charge the second capacitor C2 so that when the insulated gate bipolar transistor 10 is turned on, the second capacitor C2 discharges to supply power to the load circuit 50.

[0070] It should be noted that the second capacitor C2 can be an electrolytic capacitor, and the second capacitor C2 is used for energy storage.

[0071] In this embodiment, the second capacitor C2 is charged by the DC power supply 61 so that when the insulated gate bipolar transistor 10 is turned on, the second capacitor C2 discharges to supply power to the load circuit 50, thereby ensuring the normal power supply of the load circuit 50.

[0072] In summary, in this embodiment of the application, the test system for an insulated-gate bipolar transistor (IGBT) includes an oscilloscope, a driving circuit, a first power supply, an IGBT, a first diode, and a load circuit. The driving circuit responds to control commands to turn the IGBT on or off. The first diode protects the IGBT from voltage breakdown when it is off. The first power supply supplies power to the load circuit when the IGBT is on. The oscilloscope acquires and displays the current signal of the IGBT for analysis by testers to obtain the matching results between the components of the driving circuit and the IGBT. Compared to using simulation software to perform simulated matching tests on the components of the driving circuit and the IGBT, the actual matching test using the IGBT test system in this embodiment reduces the error in the matching test results and solves the problem of large errors in the matching test results caused by testers using simulation software to perform simulated matching tests on the components of the driving circuit and the IGBT in the prior art.

[0073] Figure 2 This is a flowchart illustrating the steps of a testing method for an insulated-gate bipolar transistor (IGBT) according to an embodiment of this application. The testing method for IGBTs provided in this embodiment is applied to the aforementioned IGBT testing system. Figure 2 As shown, the method may include:

[0074] Step 101: The drive circuit responds to the control command and controls the insulated gate bipolar transistor (IGBT) to be turned on or off; wherein, when the IGBT is turned on, power is supplied to the load circuit connected in series with the IGBT; and the first diode connected in parallel with the IGBT protects the IGBT from voltage breakdown when it is turned off.

[0075] In this embodiment, the driving circuit responds to a control command to control the insulated-gate bipolar transistor (IGBT) to turn on or off. When the IGBT is on, power is supplied to the load circuit connected in series with the IGBT. A first diode connected in parallel with the IGBT protects the IGBT from voltage breakdown when it is off, thereby acquiring and displaying the IGBT's current signal. The specific implementation process is similar to that described above and will not be repeated here.

[0076] Step 102: Collect and display the current signal of the insulated gate bipolar transistor.

[0077] In this embodiment, the current signal of the insulated gate bipolar transistor (IGBT) is acquired and displayed for analysis by testers to obtain the matching results between the components of the driving circuit and the IGBT. The specific implementation process is similar to that described above and will not be repeated here.

[0078] Optionally, in some embodiments, the matching process between the components of the driving circuit and the insulated gate bipolar transistor includes: (1) selecting a signal generator with a sampling rate greater than or equal to 1 GS / S, a bandwidth greater than or equal to 50 MHz, and outputting a double-pulse signal; (2) selecting an oscilloscope with a sampling rate greater than or equal to 6.25 GS / S and a bandwidth greater than or equal to 1 GHz; and (3) selecting the voltage acquisition terminal and current acquisition terminal of the oscilloscope, wherein the voltage acquisition terminal of the oscilloscope is a low-voltage probe with a bandwidth greater than or equal to 1 GHz. z, the withstand voltage of the low-voltage probe is greater than or equal to 300V; the current acquisition terminal of the oscilloscope is a current probe with a bandwidth greater than or equal to 120MHz; in addition, the oscilloscope also has a high-voltage differential probe, which can be connected to the emitter of the insulated gate bipolar transistor for acquiring the voltage of the insulated gate bipolar transistor, with a bandwidth greater than or equal to 200MHz and a withstand voltage greater than or equal to 1500V; (4) select the components of the driving circuit and the insulated gate bipolar transistor; (5) build the test system of the insulated gate bipolar transistor provided in the embodiments of this application;

[0079] (6) Using an insulated gate bipolar transistor (IGBT) test system, perform a real matching test between the components of the driving circuit and the IGBT, obtain the curve of the current value of the IGBT changing with time as displayed on the oscilloscope, and then obtain the amount of current reduction and the time taken for the current value to decrease. If the difference between the time taken for the current value to decrease and the standard decrease time (e.g., 35 nanoseconds) is less than the first difference threshold (e.g., 10 nanoseconds), determine that the matching test result between the components of the driving circuit and the IGBT is that the components of the driving circuit and the IGBT are matched during the process of the driving circuit controlling the IGBT to turn off; According to the curve of the current value of the IGBT changing with time as displayed on the oscilloscope, obtain the amount of current increase and the time taken for the current value to increase. If the difference between the time taken for the current value to increase and the standard rise time (e.g., 110 nanoseconds) is less than the second difference threshold (e.g., 10 nanoseconds), determine that the matching test result between the components of the driving circuit and the IGBT is that the components of the driving circuit and the IGBT are matched during the process of the driving circuit controlling the IGBT to turn on.

[0080] (6) Adjust the components of the drive circuit (including the drive chip, the first resistor, the second resistor, etc.) so that the components of the drive circuit and the insulated gate bipolar transistor meet the matching conditions: the difference between the time taken for the current value to decrease and the standard decrease time is less than the first difference threshold, and the difference between the time taken for the current value to rise and the standard rise time is less than the second difference threshold; (8) Package the components of the drive circuit and the insulated gate bipolar transistor that meet the matching conditions into the smart power module; (9) Determine that the research and development stage of the smart power module has been completed.

[0081] In this embodiment, the driving circuit responds to control commands to control the insulated-gate bipolar transistor (IGBT) to turn on or off. When the IGBT is on, power is supplied to the load circuit connected in series with the IGBT. A first diode connected in parallel with the IGBT protects the IGBT from voltage breakdown when it is off. The current signal of the IGBT is collected and displayed for analysis by testers to obtain the matching results between the components of the driving circuit and the IGBT. Compared with using simulation software to perform simulated matching tests on the components of the driving circuit and the IGBT, the actual matching test using the IGBT test method in this embodiment reduces the error of the matching test results and solves the problem of large errors in the matching test results caused by testers using simulation software to perform simulated matching tests on the components of the driving circuit and the IGBT in the prior art.

[0082] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element. Furthermore, it should be noted that the scope of the methods and apparatuses in the embodiments of this application is not limited to performing functions in the order shown or discussed, but may also include performing functions substantially simultaneously or in the reverse order, depending on the functions involved. For example, the described methods may be performed in a different order than described, and various steps may be added, omitted, or combined. Additionally, features described with reference to certain examples may be combined in other examples.

[0083] The embodiments of this application have been described above with reference to the accompanying drawings. However, this application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of this application without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of this application.

Claims

1. A test system for an insulated-gate bipolar transistor, characterized in that, The system includes: an oscilloscope, a driving circuit, a first power supply, an insulated-gate bipolar transistor (IGBT), a first diode, and a load circuit; the oscilloscope is connected to the driving circuit and the IGBT, the driving circuit is connected to the IGBT, the IGBT is connected in parallel with the first diode, the IGBT is connected in series with the load circuit, and the first power supply is connected to both the IGBT and the load circuit; The driving circuit is used to control the insulated gate bipolar transistor to be turned on or off in response to a control command. The first diode is used to protect the insulated gate bipolar transistor from voltage breakdown when it is turned off; The first power supply is used to supply power to the load circuit when the insulated gate bipolar transistor is turned on; The oscilloscope is used to acquire and display the current signal of the insulated gate bipolar transistor; The driving circuit includes a second power supply, a signal generator, a driving chip, a first capacitor, a first resistor, a second resistor, a second diode, and a third diode; The gate of the insulated gate bipolar transistor is connected to the first end of the first resistor, the second end of the first resistor is connected to the anode of the second diode, and the cathode of the second diode is connected to the first terminal HO of the driver chip. The gate of the insulated gate bipolar transistor is connected to the first end of the second resistor, the second end of the second resistor is connected to the negative terminal of the third diode, and the positive terminal of the third diode is connected to the first terminal HO of the driver chip. The second terminal VS of the driver chip is connected to the emitter of the insulated gate bipolar transistor, the second terminal VS of the driver chip is connected to the first terminal of the first capacitor, and the third terminal VB of the driver chip is connected to the second terminal of the first capacitor; the positive terminal CH3 of the signal generator is connected to the positive input terminal HIN of the driver chip, and the negative terminal CH4 of the signal generator is connected to the negative input terminal COM of the driver chip; the voltage acquisition terminal CH1 of the oscilloscope is connected to the positive terminal CH3 of the signal generator; and the second power supply is connected to the power supply terminal VCC of the driver chip.

2. The test system for insulated gate bipolar transistors according to claim 1, characterized in that, The first capacitor is a bootstrap capacitor; The signal generator is used to output a drive signal in response to a control command; The driver chip is used to control the first terminal HO of the driver chip to output a high level and the second terminal VS of the driver chip to output a low level when the drive signal is high, so that the insulated gate bipolar transistor is turned on; when the drive signal is low, the first terminal HO and the second terminal VS of the driver chip are both controlled to output a low level, so that the insulated gate bipolar transistor is turned off. The second diode cooperates with the third diode to energize the second resistor and de-energize the first resistor when the insulated gate bipolar transistor is turned on; and to energize the first resistor and de-energize the second resistor when the insulated gate bipolar transistor is turned off. The second power supply is used to power the driver chip; The first capacitor is used to maintain a voltage difference between the second terminal VS and the third terminal VB of the driver chip.

3. The test system for insulated gate bipolar transistors according to claim 1, characterized in that, The length of the line from the first terminal HO of the driver chip to the gate of the insulated gate bipolar transistor is less than a first preset threshold.

4. The test system for insulated gate bipolar transistors according to claim 1, characterized in that, The length of the line from the second terminal VS of the driver chip to the emitter of the insulated gate bipolar transistor is less than a second preset threshold.

5. The test system for an insulated gate bipolar transistor according to claim 1, characterized in that, The length of the line from the third terminal VB of the driver chip through the first capacitor to the second terminal VS of the driver chip is less than a third preset threshold.

6. The test system for an insulated gate bipolar transistor according to claim 1, characterized in that, The current acquisition terminal of the oscilloscope is connected to the collector of the insulated gate bipolar transistor; The negative terminal of the signal generator and the negative input terminal of the driver chip are both connected to the negative terminal of the first power supply. The signal generator is specifically used to input a driving signal to the positive input terminal of the driving chip through the positive terminal of the signal generator; The oscilloscope is specifically used to acquire the drive signal through the voltage acquisition terminal of the oscilloscope and to acquire the current signal through the current acquisition terminal of the oscilloscope.

7. The test system for an insulated gate bipolar transistor according to claim 6, characterized in that, The length of the line from the negative input terminal of the driver chip to the negative terminal of the first power supply is less than a fourth preset threshold.

8. The test system for an insulated gate bipolar transistor according to claim 1, characterized in that, The load circuit includes an inductive load and a fourth diode; The inductive load is connected in parallel with the fourth diode. The first end of the inductive load is connected to the emitter of the insulated gate bipolar transistor, and the second end of the inductive load is connected to the negative terminal of the first power supply. The positive terminal of the first power supply is connected to the collector of the insulated gate bipolar transistor. The fourth diode is used to freewheel the inductive load.

9. The test system for an insulated gate bipolar transistor according to claim 1, characterized in that, The first power source includes a DC power source and a second capacitor. The first terminal of the second capacitor is connected to the positive terminal of the DC power source, and the second terminal of the second capacitor is connected to the negative terminal of the DC power source. The first terminal of the second capacitor is connected to the collector of the insulated gate bipolar transistor, the second terminal of the second capacitor is connected to the first terminal of the load circuit, and the second terminal of the load circuit is connected to the emitter of the insulated gate bipolar transistor. The DC power supply is used to charge the second capacitor so that, when the insulated gate bipolar transistor is turned on, the second capacitor discharges to supply power to the load circuit.

10. A test method for an insulated-gate bipolar transistor, characterized in that, The method, applied to a test system for an insulated-gate bipolar transistor as described in any one of claims 1-9, comprises: The drive circuit responds to control commands to control the insulated gate bipolar transistor (IGBT) to turn on or off; wherein, when the IGBT is on, power is supplied to the load circuit connected in series with the IGBT; and a first diode connected in parallel with the IGBT protects the IGBT from voltage breakdown when it is off. Acquire and display the current signal of the insulated gate bipolar transistor; The driving circuit includes a second power supply, a signal generator, a driving chip, a first capacitor, a first resistor, a second resistor, a second diode, and a third diode; The gate of the insulated gate bipolar transistor is connected to the first end of the first resistor, the second end of the first resistor is connected to the anode of the second diode, and the cathode of the second diode is connected to the first terminal HO of the driver chip. The gate of the insulated gate bipolar transistor is connected to the first end of the second resistor, the second end of the second resistor is connected to the negative terminal of the third diode, and the positive terminal of the third diode is connected to the first terminal HO of the driver chip. The second terminal VS of the driver chip is connected to the emitter of the insulated gate bipolar transistor, the second terminal VS of the driver chip is connected to the first terminal of the first capacitor, and the third terminal VB of the driver chip is connected to the second terminal of the first capacitor; the positive terminal CH3 of the signal generator is connected to the positive input terminal HIN of the driver chip, and the negative terminal CH4 of the signal generator is connected to the negative input terminal COM of the driver chip; the voltage acquisition terminal CH1 of the oscilloscope is connected to the positive terminal CH3 of the signal generator; and the second power supply is connected to the power supply terminal VCC of the driver chip.

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