Lithographic apparatus and stereolithography method

Abstract

This application provides a photolithography apparatus and a stereolithography method. The photolithography apparatus includes an arc-shaped substrate, a light-emitting unit, and a lens layer. The light-emitting unit is disposed on the inner sidewall of the arc-shaped substrate, and the light emitted by the light-emitting unit is directed towards the center of the arc-shaped substrate. The light-emitting unit is linearly arranged on the curved surface corresponding to the inner sidewall of the arc-shaped substrate. When exposing the photoresist at the center of the arc-shaped substrate, the light-emitting unit rotates relative to the sample, and the sample is exposed layer by layer. In this application, the stereolithography method described above effectively improves the photolithography accuracy in the photolithography process and effectively improves the photolithography process.

Description

Technical Field

[0001] This application relates to the field of display technology, and more specifically, to a photolithography apparatus and a stereolithography method. Background Technology

[0002] With the development of display technology, consumers have increasingly higher requirements for display products, and various display devices are now widely used as mainstream display components in electronic display products such as laptops, smartphones, and televisions. The fabrication of these display panels typically employs traditional processes such as exposure and etching.

[0003] Traditional photolithography methods use light of varying intensities to solidify corresponding film layers or photosensitive adhesive layers, resulting in ideal patterned structures. However, traditional photolithography methods typically require multiple light irradiation processes, which are complex and slow. Furthermore, as the complexity of internal device structures gradually increases, traditional light irradiation methods can no longer meet the requirements of the fabrication process.

[0004] In summary, the existing photo-processing technology involves numerous photo-processing steps and cannot process complex film layers, thus reducing the efficiency of panel manufacturing and hindering further improvement in the overall performance of the panel. Summary of the Invention

[0005] This application addresses the shortcomings of existing methods by proposing a photolithography apparatus and a stereolithography method to solve the technical problems of unsatisfactory photolithography results and the inability to illuminate complex film layers.

[0006] In a first aspect, embodiments of this application provide a photolithography apparatus for performing photolithography on a sample, comprising:

[0007] Curved substrate,

[0008] A plurality of light-emitting units are disposed on the inner sidewall of the arc-shaped substrate, and the light emitted by the light-emitting units is directed toward the center of the arc-shaped substrate; and,

[0009] A liquid holding tank, the center of which is located on the same central axis as the center of the arc-shaped substrate, and the liquid holding tank is used to hold the sample;

[0010] In this embodiment, multiple light-emitting units are linearly arranged on the curved surface corresponding to the inner sidewall of the arc-shaped substrate. During photolithography, the light-emitting units rotate relative to the liquid tank, and the light-emitting units can move up and down relative to the height direction of the sample to perform photolithography on the sample.

[0011] According to one embodiment of this application, the arc-shaped substrate is configured as a circular structure, and multiple light-emitting units are arranged at equal intervals around the inner sidewall of the circular structure.

[0012] According to one embodiment of this application, the arc length corresponding to the light-emitting unit is at least greater than half the circumference of the circular structure.

[0013] According to one embodiment of this application, the arc-shaped substrate is configured as a half-circle, and the plane formed by the multiple light-emitting units is the same horizontal plane.

[0014] According to one embodiment of this application, the arc-shaped substrate further includes a heat dissipation layer, a buffer layer, and a wiring layer;

[0015] The buffer layer is disposed on the side of the heat dissipation layer near the light-emitting unit, the wiring layer is disposed on the side of the buffer layer near the light-emitting unit, the light-emitting unit is disposed on the wiring layer and electrically connected to the wiring layer.

[0016] According to one embodiment of the present invention, the diameter of the via near the wiring layer is larger than the diameter of the via near the heat dissipation layer.

[0017] According to one embodiment of this application, a first trench is provided on the wiring layer, and the first trench is correspondingly provided between two adjacent light-emitting units. A through hole is also provided in the buffer layer, and metal is provided in the through hole. One end of the metal is in contact with the wiring layer, and the other end of the metal is in contact with the heat dissipation layer.

[0018] According to one embodiment of this application, the liquid-containing tank is configured as any one of cylindrical, square, or spherical shapes.

[0019] According to an embodiment of this application, the photolithography apparatus further includes a lens layer and an encapsulation layer, wherein the encapsulation layer is disposed on the side of the light-emitting unit away from the substrate, and the lens layer is disposed on the side of the encapsulation layer away from the substrate;

[0020] The encapsulation layer is further provided with a second groove, which is located on the side of the encapsulation layer near the light-emitting unit.

[0021] Secondly, embodiments of this application provide a stereolithography method, comprising the following steps:

[0022] The photolithography apparatus provided in the embodiments of this application is provided;

[0023] The light-emitting unit is controlled to emit light, and the light-emitting unit is controlled to rotate relative to the sample placed in the liquid tank, so as to perform photolithography on the current layer of the sample;

[0024] The sample is controlled to move up and down relative to the light-emitting unit along the height direction of the sample. At each layer position of the sample, the light-emitting unit is controlled to rotate relative to the sample held in the liquid tank, so as to perform photolithography on each layer of the sample.

[0025] According to an embodiment of this application, the photolithography process performed on each layer of the sample includes:

[0026] Determine the exposure dose corresponding to each layer, and adjust the luminous intensity of the light-emitting unit according to the exposure dose;

[0027] The exposure dose mentioned herein includes:

[0028] The exposure amount provided by each of the light-emitting units and the exposure coefficient corresponding to each light-emitting unit were measured respectively.

[0029] Based on the exposure amount and the exposure coefficient, the exposure dose received by the film layer during the Kth exposure in the Mth time period is obtained;

[0030] An exposure model is established, and the numerical value of the exposure dose is obtained iteratively.

[0031] The beneficial technical effects of the technical solutions provided in this application include:

[0032] This application provides a photolithography apparatus and a stereolithography method. The photolithography apparatus includes an arc-shaped substrate, a light-emitting unit, and a liquid tank. The light-emitting unit is disposed on the inner sidewall of the arc-shaped substrate, and the light emitted by the light-emitting unit is directed towards the center of the arc-shaped substrate. The light-emitting unit is linearly arranged on the curved surface corresponding to the inner sidewall of the arc-shaped substrate. When exposing a sample in the liquid tank at the center of the arc-shaped substrate, the light-emitting unit is rotated relative to the sample, and the sample is exposed layer by layer to complete the photolithography process of the entire photoresist. In this application, the sample is exposed using a stereolithography method, which effectively improves the photolithography accuracy and reduces the photolithography complexity in the photolithography process, thereby improving the photolithography process and enhancing device performance.

[0033] Additional aspects and advantages of this application will be set forth in part in the description which follows, and will become apparent from the description or may be learned by practice of this application. Attached Figure Description

[0034] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the following description of the embodiments taken in conjunction with the accompanying drawings, wherein:

[0035] Figure 1A This is a schematic diagram of the film structure of a photolithography apparatus provided in one embodiment of this application;

[0036] Figure 1B A side view of the photolithography apparatus provided in an embodiment of this application;

[0037] Figure 2 Another side view of the substrate provided in an embodiment of this application;

[0038] Figure 3 This is a top view schematic diagram of the photolithography apparatus provided in the embodiments of this application;

[0039] Figure 4 This is a schematic diagram of the etching effect of the sample to be processed provided in the embodiments of this application;

[0040] Figure 5 This refers to the stereolithography method provided in the embodiments of this application;

[0041] Figure 6 This is a schematic diagram of the photolithography process provided in an embodiment of this application;

[0042] Figure 7 This is a schematic diagram of sample segmentation provided for an embodiment of this application.

[0043] Explanation of reference numerals in the attached figures:

[0044] 10-Substrate, 101-Heat dissipation layer, 102-Buffer layer, 103-Wire layer, 105-Light emission unit, 1051-First aperture, 1052-Second aperture, 106-Lens layer, Micro protrusion 1061, 107-Through hole, 1071-Metal, 108-Second trench, 109-First trench, 300-Photolithography device, 301-Liquid tank, 302-Sample, 303-Aperture. Detailed Implementation

[0045] This application is described in detail below. Examples of embodiments of this application are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar components or components having the same or similar functions throughout. Furthermore, detailed descriptions of known technologies that are unnecessary for the features of this application are omitted. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application.

[0046] It will be understood by those skilled in the art that, unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains. It should also be understood that terms such as those defined in general dictionaries should be understood to have the same meaning as in the context of the prior art, and should not be interpreted in an idealized or overly formal sense unless specifically defined as herein.

[0047] Those skilled in the art will understand that, unless explicitly stated otherwise, the singular forms “a,” “an,” “the,” and “the” used herein may also include the plural forms. It should be further understood that the term “comprising” as used in the specification of this application means the presence of features, integers, steps, operations, elements, and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. It should be understood that when we say an element is “connected” or “coupled” to another element, it can be directly connected or coupled to the other element, or there may be intermediate elements. Furthermore, “connected” or “coupled” as used herein can include wireless connections or wireless coupling. The term “and / or” as used herein includes all or any units and all combinations of one or more associated listed items.

[0048] In the description of this application, it should be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0049] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, unless otherwise stated, "a plurality of" means two or more.

[0050] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0051] In the description of this specification, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.

[0052] This application provides a photolithography apparatus aimed at solving the aforementioned technical problems of the prior art. The technical solution of this application and how it solves the above-mentioned technical problems are described in detail below with specific embodiments.

[0053] Firstly, embodiments of this application provide a photolithography apparatus. For example... Figure 1A As shown, Figure 1A This is a schematic diagram of the film structure of a photolithography apparatus provided in one embodiment of this application. The photolithography apparatus includes a substrate 10, a light-emitting unit 105, and a lens layer 106.

[0054] Specifically, the substrate 10 can be configured as a multi-layer stacked structure. For example, in the embodiments of this application, the substrate 10 includes at least three layers stacked together to form the substrate of the photolithography device. In the following embodiments, the substrate 10 includes a heat dissipation layer 101, a buffer layer 102, and a wiring layer 103.

[0055] The buffer layer 102 is disposed on the heat dissipation layer 101, the wiring layer 103 is disposed on the buffer layer 102, and the three film layers are stacked on each other to form the substrate 10 in the embodiment of this application.

[0056] In this embodiment, the light-emitting unit 105 is correspondingly disposed on the substrate 10. Furthermore, multiple light-emitting units 105 can be equally spaced on the substrate 10. For example... Figure 1B As shown, Figure 1B A side view of the photolithography apparatus provided for an embodiment of this application. See details. Figure 1B A row of light-emitting units 105 is linearly arranged on the substrate 10. Specifically, the light-emitting unit 105 can be a light-emitting diode or other light-generating light source device, which will not be described in detail here. The light emitted by the light-emitting unit 105 is used to illuminate and process the required material or film layer.

[0057] Furthermore, the photolithography apparatus provided in this embodiment is a stereolithography apparatus. Therefore, when setting the substrate 10, the substrate 10 is configured as an arc-shaped substrate. That is, the substrate 10 includes an arc-shaped surface, and the arc-shaped surface is configured as a concave arc-shaped surface. See details. Figure 1B During setup, since the substrate 10 is an arc-shaped substrate, the light-emitting unit 105 is correspondingly disposed on the inner sidewall of the arc-shaped substrate, forming a ring on the inner sidewall. When the substrate 10 and the light-emitting unit 105 are laid out flat, the light-emitting unit 105 is linearly arranged in a row on the substrate 10. Furthermore, when the light-emitting unit 105 emits light normally, the light emitted by the light-emitting unit 105 is directed towards the center of the arc-shaped substrate. Simultaneously, a sample is placed at the corresponding position at the center, and the sample is exposed using the light emitted by the light-emitting unit 105.

[0058] like Figure 2 As shown, Figure 2This is another side view of the substrate provided in an embodiment of this application. In this embodiment, when the arc-shaped substrate 10 is provided, the arc-shaped substrate 10 can be directly set as a circular structure, such as a ring structure. The ends of the substrate 10 are connected to form a ring structure.

[0059] Furthermore, the photolithography apparatus also includes a liquid reservoir 301, which is located at the center of the arc-shaped substrate 10. The center of the liquid reservoir 301 and the center of the arc-shaped substrate are located on the same central axis ab. Specifically, when exposing the desired sample, the sample material is placed in the liquid reservoir 301 corresponding to the center O of the circular substrate. The light emitted by the light-emitting unit 105 is directed towards the center O, exposing the sample in the liquid reservoir.

[0060] Specifically, in this embodiment, when setting the light-emitting unit 105, since the substrate 10 is set as an arc-shaped substrate, multiple light-emitting units 105 can be equally spaced on the inner sidewall of the arc-shaped substrate. For example, the spacing between two adjacent light-emitting units is the same. Optionally, when the arc-shaped substrate 10 is set as a ring structure, the light-emitting units 105 are also arranged in a ring around the center O. That is, the plane formed by multiple light-emitting units 105 is the same plane. In this way, when the photolithography device rotates, each light-emitting unit 105 illuminates only the material within the same plane during the rotation process, thereby controlling its illumination range and ensuring the illumination effect of the device.

[0061] Combination Figure 1B as well as Figure 2 When the substrate 10 is unfolded, multiple light-emitting units 105 are arranged linearly on the substrate.

[0062] Furthermore, when the light-emitting unit 105 is disposed on the substrate with the aforementioned annular structure, the light-emitting unit 105 can be configured as at least one ring. Optionally, see details. Figure 1B On the inner wall of the annular substrate, multiple light-emitting units 105 are arranged at equal intervals to form a circle with center O as the center. When the photolithography device rotates, the light-emitting units 105 at different positions on the circle have the same effect on the sample in the liquid tank, thereby ensuring its stereolithography effect.

[0063] Furthermore, when setting the aforementioned arc-shaped substrate and multiple light-emitting units 105, the arc-shaped substrate can also be set as other non-circular arc-shaped structures, such as elliptical arc-shaped structures. By setting the substrate as an arc-shaped structure with a certain concavity, the light emitted by the light-emitting unit 105 is directed towards the center of the arc-shaped structure, thereby enabling better photolithography of the material during the rotational exposure process of the photolithography apparatus and improving the photolithography effect. In the following embodiments, the cross-section of the substrate is illustrated using a circular structure as an example.

[0064] In this embodiment, the arc-shaped substrate can also be configured as a half-circle. When the arc-shaped substrate is configured as a half-circle structure, it is equivalent to removing half of the complete annular substrate. This reduces the number of corresponding light-emitting units 105, thereby lowering the manufacturing cost. Therefore, the photolithography apparatus provided in this embodiment can also control its power and exposure conditions according to the requirements of the exposed product, thereby ensuring its photolithography effect.

[0065] In this embodiment, when the substrate is a circular annular substrate, the light-emitting unit 105 can be arranged in at least one ring on the annular sidewall. Optionally, the light-emitting unit 105 can be arranged in one ring around the annular sidewall, and the plane formed by each light-emitting unit is the same plane. In this way, the center of the circle formed by each light-emitting unit 105 and the center of the circle corresponding to the circular annular substrate are on the same central axis. When the light-emitting unit 105 is rotated relative to the liquid tank, the light-emitting unit 105 can illuminate the sample on the same plane.

[0066] Furthermore, when setting the aforementioned light-emitting unit 105, the length of the arc formed by the light-emitting unit on the arc-shaped sidewall is at least greater than half the circumference of the annular substrate. This ensures that a sufficient number of light-emitting units illuminate the material in the exposure area during relative rotation, thereby guaranteeing the photolithography effect of the film layer.

[0067] Furthermore, when the light-emitting unit 105 is arranged in a circle around the annular sidewall, the distance between two adjacent light-emitting units or the arc length between two adjacent light-emitting units can be the same. Specifically, this can be determined based on the outer perimeter and dimensions of the resin to be photolithographically processed. When the depth of the material to be photolithographically processed is large, the arrangement density of the light-emitting unit 105 can be increased to improve the light intensity and ensure the photolithography effect.

[0068] See Figure 1 for details. Figure 2 In this embodiment, the substrate 10 needs to be bent to form a circular ring structure, ensuring that each light-emitting unit is at the same distance from the center of the arc. Furthermore, to further improve the illumination effect of the light-emitting unit, the photolithography apparatus in this embodiment also includes a lens layer 106. This lens layer 106 is disposed on the light-emitting side of the light-emitting unit 105. When the light-emitting unit 105 emits light, the light passes through each film layer sequentially and is directed from the lens layer 106 onto the material to be exposed.

[0069] In this embodiment, the photolithography apparatus further includes an encapsulation layer 104, which is disposed on the wiring layer 103 and completely covers the light-emitting unit 105. The encapsulation layer 104 achieves a sealing effect for each light-emitting unit. Meanwhile, the lens layer 106 is disposed on the side of the encapsulation layer 104 away from the light-emitting unit 105.

[0070] Referring to Figure 1, in this embodiment, the lens layer 106 is disposed on the encapsulation layer 104. Specifically, when the lens layer 106 is disposed, a plurality of micro-protrusions 1061 can be disposed on the surface of the lens layer 106. The plurality of micro-protrusions 1061 function similarly to a convex lens. When the light emitted from the light-emitting unit 105 passes through each film layer and reaches the micro-protrusion 1061, the light is again acted upon by the micro-protrusion 1061. For example, the lens layer 106 focuses the scattered light, thereby controlling the range of the emitted light, and the micro-protrusion 1061 further enhances the light emission efficiency, thereby ensuring the photolithography effect of the light on the sample under test. In this embodiment, when the light-emitting unit 105 is disposed, the light emission intensity corresponding to each light-emitting unit 105 can be adjusted. The light emission intensity of each light-emitting unit 105 can be set to the same light emission intensity. The light emitted by the light-emitting unit 105, after passing through the micro-protrusions 1061, exposes the sample, thereby ensuring its exposure effect. Furthermore, the luminous intensity of the light-emitting unit 105 can be adjusted according to the complexity of the sample to better adapt to different exposure requirements. When setting the light-emitting unit 105 to different luminous intensities, the settings can be made according to the specific product, which will not be elaborated here.

[0071] In this embodiment, each micro-protrusion 1061 is correspondingly arranged with each light-emitting unit 105, thereby ensuring that it enhances the light emitted by the light-emitting unit 105. Furthermore, the aforementioned micro-protrusions 1061 can also be configured with other shapes or structures, such as setting the micro-protrusion 1061 as a raised hexagon or other shapes. Through the above structure, the light extraction efficiency of the emitted light effect is enhanced, thereby improving the photolithography effect of the photolithography apparatus.

[0072] Meanwhile, since the substrate and the corresponding film layer need to be bent in this embodiment, a plurality of second trenches 108 are also provided in the encapsulation layer 104. The second trenches 108 can be located on the side of the encapsulation layer 104 near the lens layer 106. That is, the surface of the encapsulation layer 104 on this side is etched downwards to form a plurality of second trenches 108. The depth of the second trenches 108 can be etched to at least half the thickness of the corresponding encapsulation layer 104. When the substrate is bent, since the second trenches 108 have certain openings, the bending stress inside the encapsulation layer 104 can be effectively released, thereby improving the bending effect of the substrate and ensuring its bending performance and quality.

[0073] In this embodiment of the application, the second groove 108 can be disposed between adjacent light-emitting units 105, or the second groove 108 can be disposed at the corresponding position between two adjacent micro protrusions 1061, so as to ensure that the corresponding film layer is more likely to bend when bent and to ensure its performance.

[0074] Furthermore, when setting the heat dissipation layer 101, buffer layer 102, and wiring layer 103 within the substrate 10, a plurality of first trenches 109 are etched and formed on the wiring layer 103. The plurality of first trenches 109 can be correspondingly disposed between two adjacent light-emitting units 105. Specifically, the first trenches 109 can be correspondingly disposed with second trenches 108, such as the first trenches 109 and second trenches 108 being in the same vertical direction. The aforementioned plurality of first trenches 109 can further improve the bending effect and performance of the film layer. In this embodiment, the wiring layer 103 is used to provide driving signals to the plurality of light-emitting units 105 and to achieve exposure processing.

[0075] In this embodiment, a plurality of through holes 107 are also provided within the buffer layer 102. Specifically, the plurality of through holes 107 can be correspondingly provided with light-emitting units 105. For example, the through holes 107 are provided at corresponding positions below each light-emitting unit 105.

[0076] Specifically, the diameter of the through hole 107 near the light-emitting unit 105 can be larger than the diameter near the heat dissipation layer 101. Additionally, a metal 1071 is disposed within the through hole 107. The metal 1071 fills the through hole 107, with one end of the metal contacting the wiring layer 103 and the other end contacting the heat dissipation layer 101.

[0077] When the light-emitting unit in the lithography apparatus operates for an extended period, a significant amount of heat is generated within and around the light-emitting unit. Due to the presence of the metal 1071 in this embodiment, the heat generated by the light-emitting unit 105 inside the device can be transferred to the heat dissipation layer 101 via the thermally conductive metal 1071, and then the excess heat is transferred to the outside through the heat dissipation layer 101. This ensures the stability of the internal temperature of the lithography apparatus during prolonged operation, thereby guaranteeing the performance of the lithography apparatus.

[0078] Furthermore, such as Figure 3 As shown, Figure 3 This is a top view schematic diagram of the photolithography apparatus provided in an embodiment of this application. The top view of the photolithography apparatus 300 is circular. That is, the substrate and the structure formed by bending the substrate are circular. The circular structure has a center O. (Referring to Figure 1-) Figure 2In the structure shown, after the substrate is bent, the film layers from the outside in are, in order: heat dissipation layer, buffer layer, wiring layer, light-emitting unit, encapsulation layer, and lens layer. The specific film layers can be seen in the structure in Figure 1, and will not be described further here.

[0079] When the photolithography apparatus is in operation, the sample 302 to be photolithographically etched is placed at the center O. In this embodiment, the sample to be photolithographically etched is a photosensitive resin material as an example. The sample 302 is placed directly in the liquid tank 301, or, depending on the usage requirements, the sample 302 is first placed in a glass container, and then the glass container is placed in the liquid tank 301.

[0080] In this embodiment, the liquid-containing tank 301 can be configured as a cylindrical tank, with the center of the cylinder and the center of the circular substrate located on the same axis. Alternatively, the liquid-containing tank can be configured as a square, rectangular, or spherical structure with a regular geometric center, as needed. Furthermore, the outer circle of the liquid-containing tank and the outer circle formed by the light-emitting unit can be concentric circles. Specifically, the liquid-containing tank can be configured as a graduated cylinder or other transparent container with a certain specification. Other structures of the liquid-containing tank are also possible, which will not be listed here.

[0081] After placing the sample 302 into the liquid tank, the light-emitting units inside the photolithography apparatus are turned on and illuminated. Since the light-emitting units are arranged in a circular ring, the light emitted by each unit will be directed towards the sample 302, thereby achieving the photolithography process on the sample.

[0082] Specifically, in order to ensure the photolithography effect, the center of each of the above-mentioned film layers and the center of the sample 302 can be located on the same central axis, thereby ensuring that the different planes form a concentric circle structure, thus ensuring the etching effect.

[0083] Furthermore, such as Figure 4 As shown, Figure 4 This is a schematic diagram illustrating the etching effect of the sample to be processed provided in an embodiment of this application. Figure 4 The aperture 303 in the embodiment of this application is equivalent to the aperture 303 formed by a ring of light-emitting units. The light emitted by the aperture 303 is directed towards the sample 302 at the corresponding position on the same plane. In this way, when the aperture 303 performs photolithography on the sample, it can ensure that the height of the etched part of the sample 302 is at the same height.

[0084] Furthermore, during the etching process, the liquid-filled tank can continuously rotate relative to the aperture 303, thereby ensuring that different parts of the sample 302 receive uniform illumination. After the illumination treatment of the sample 302 corresponding to the aperture is completed, the light-emitting unit and the corresponding photolithography device are moved, such as moving up and down along the height direction of the sample 302. Figure 4 (In the direction indicated by the middle arrow). During this movement, the relative position and height of the aperture 303 and the sample 302 also change. This allows for layer-by-layer photolithography of the sample 302. In this embodiment, during the relative rotation of the liquid tank and the aperture 303, the light-emitting unit corresponding to the aperture can rotate while the liquid tank remains stationary, or the light-emitting unit can remain different while the liquid tank rotates; or both can rotate relative to each other at a certain speed, such as uniform circular rotation. Specifically, this can be determined based on the material requiring exposure. As long as relative rotation between the two is ensured, photolithography of the sample can be achieved.

[0085] Based on the same inventive concept, embodiments of this application provide a stereolithography method, such as... Figure 5 As shown, Figure 5 This is a stereolithography method provided in the embodiments of this application. Specifically, during stereolithography, the light-emitting unit is controlled to emit light, and the light-emitting unit is controlled to rotate relative to the sample held in the liquid tank, so as to perform photolithography on the current layer of the sample;

[0086] The sample is controlled to move up and down relative to the light-emitting unit along the height direction of the sample. At each layer position of the sample, the light-emitting unit is controlled to rotate relative to the sample held in the liquid tank, so as to perform photolithography on each layer of the sample and expose the sample. In this embodiment of the application, the above-mentioned photolithography device is used to perform stereolithography on the sample and realize the photolithography process of complex components. Specifically, the stereolithography includes the following steps:

[0087] This application provides a photolithography apparatus in one of its embodiments;

[0088] Place the sample in the liquid tank and transfer the container to the center of the curved substrate;

[0089] The light-emitting unit is controlled to emit light, wherein the light-emitting unit rotates relative to the liquid tank and simultaneously exposes the sample;

[0090] The sample is controlled to move up and down relative to the light-emitting unit, so that the sample is photolithographically processed layer by layer in the height direction of the sample;

[0091] Each layer was processed sequentially using the method described above, and the photolithography of the sample was completed.

[0092] Specifically, in combination Figure 4 The diagram shows the lithography apparatus described above. During stereolithography, the aforementioned lithography apparatus is first provided, and the sample to be lithographically copied is prepared. Simultaneously, the sample to be lithographically copied is placed in a liquid tank.

[0093] After the above preparations are completed, the photolithography apparatus is turned on, and the light-emitting units within it emit light. Since the substrate of the photolithography apparatus is an arc-shaped substrate, the light emitted by the light-emitting units is all directed towards the center O, and the distance from the light-emitting units at different locations to the center O is the same. Furthermore, in this embodiment, the light-emitting units are linearly arranged on the circular or arc-shaped sidewalls; therefore, the height of the sample etched by the light-emitting units in the same circle is also the same.

[0094] Furthermore, the photolithography apparatus is rotated relative to the sample. During the rotation, the light-emitting unit will move in a circle around the center O, thereby performing photolithography on the sample at the same height during the rotation.

[0095] Furthermore, during the relative rotation of the photolithography device and the liquid tank, the photolithography device can remain stationary while the liquid tank rotates. In this way, the movement between the two is also circular, and both can achieve the same movement and photolithography effect, which will not be elaborated here.

[0096] In this embodiment of the application, when setting up the above-mentioned arc-shaped photolithography device and the corresponding liquid tank, the center of the liquid tank and the center O of the arc-shaped photolithography device can be located on the same central axis, thereby ensuring a better photolithography effect during rotation.

[0097] After photolithography of samples at the same height is completed, the height between the light-emitting unit and the liquid tank is adjusted, allowing the light-emitting unit to move relative to the liquid tank along the height direction of the sample. For example, both can move up and down along the height direction of the liquid tank. Specifically, the liquid tank can be configured as a lifting mechanism, whose height is adjusted when samples at different heights need to be exposed. After photolithography of samples at the same height is completed, photolithography is then performed on samples at other heights, ultimately completing the processing of samples across the entire height layer.

[0098] like Figure 6 as well as Figure 7 , Figure 6 This is a schematic diagram of the photolithography process provided in an embodiment of this application. Figure 7 This is a schematic diagram of sample segmentation provided in an embodiment of this application. In this embodiment, the sample is illustrated using liquid resin material as an example. Specifically, during the layer-by-layer processing of the sample, the cylindrical sample, such as a cylindrical resin liquid sample, can be sliced ​​into layers of the same unit thickness, wherein the thickness of each layer is 'a', and the layer is divided into N cubes with side length 'a'. Thus, each layer is divided into N cubes, and each small cube is equivalent to a voxel.

[0099] After the division is completed, the layer is exposed. In this embodiment, when the above-mentioned light-emitting unit 105 is set, the angle between two adjacent light-emitting units and the center of the cylinder is α. For example, at positions 600 and 601, there are two adjacent light-emitting units at these two positions. Therefore, during relative rotation, since K light-emitting units are set on the circumference, the voxel of the same cube will be exposed K times during rotation, and the exposure dose each time is D. 11 D 12 ...D 1K .

[0100] Measure the exposure dose provided by each light-emitting unit and the corresponding exposure coefficient for each light-emitting unit. For example, if the exposure dose and exposure coefficient for each light-emitting unit are D... 11 g KN That is, during each revolution, the exposure dose is D. 11 g 1N +D 12 g 2N +...+D 1k g kN .

[0101] Among them, g KN Let g be the exposure factor for the Nth voxel in the Kth exposure. KN = f(W,K,N,a,α,φ), where W is the beam width and φ is the absorption coefficient of the resin sample material to be photolithographically patterned at the corresponding wavelength. All the above parameter values ​​can be obtained based on the characteristics of the material being exposed.

[0102] After obtaining the above parameter values, the exposure dose for the Kth exposure within the Mth exposure period is D. MK The exposure dose per voxel is: D 11 g 1N +D 12 g 2N +...+D 1k g kN +D 21 g 1N +D 22 g 2N +...+D 2k g kN +...+D M1 g 1N +D M2 g 2N +...+D Mk g kN .

[0103] After obtaining the total exposure dose of a single voxel in each layer, a model for resin voxel exposure is established. The exposure dose of all voxels and the required exposure dose are solved simultaneously and iteratively to obtain the exposure amount D. MK For the same type of resin photolithography material, the corresponding exposure amount D MK They are the same, therefore, this model can be substituted into D. MK The values ​​are determined, and an exposure program is established to sequentially expose the same type of resin using this exposure program.

[0104] See details Figure 7 After the current layer photolithography is completed, the relative position between the light-emitting unit and the liquid tank is adjusted. For example, if the aperture corresponding to the current layer is the first aperture 1051, after the current layer photolithography is completed, the first aperture is moved to the position of the second aperture 1052. Then, during the photolithography process, following the steps of the first aperture photolithography, the resin liquid corresponding to the second aperture 1052 is exposed. This photolithography process is repeated for multiple other layers until the exposure of the entire cylindrical resin liquid is completed, yielding the desired product after photolithography.

[0105] In this embodiment, the light source for photolithography is a linear light source arranged in a circular ring, and during the exposure process, the material to be exposed rotates and moves relative to the light-emitting unit. After the material exposure process within each layer is completed, photolithography of other layers continues, achieving a stereolithography effect. Furthermore, the photolithography process offers high precision and is suitable for complex three-dimensional structures. Moreover, no other supporting components need to be placed inside the etching solution during the entire photolithography process, allowing for one-time integral forming. This improves the photolithography effect and enhances the photolithography process.

[0106] Those skilled in the art will understand that the steps, measures, and solutions in the various operations, methods, and processes discussed in this application can be alternated, modified, combined, or deleted. Furthermore, other steps, measures, and solutions in the various operations, methods, and processes discussed in this application can also be alternated, modified, rearranged, decomposed, combined, or deleted. Furthermore, steps, measures, and solutions in the prior art that are similar to those disclosed in this application can also be alternated, modified, rearranged, decomposed, combined, or deleted.

[0107] The above description is only a partial embodiment of this application. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of this application, and these improvements and modifications should also be considered within the scope of protection of this application.

Claims

1. A photolithography apparatus for performing photolithography on a sample, characterized in that, include: Curved substrate, A plurality of light-emitting units are disposed on the inner sidewall of the arc-shaped substrate, and the light emitted by the light-emitting units is directed toward the center of the arc-shaped substrate; and, A liquid holding tank, the center of which is located on the same central axis as the center of the arc-shaped substrate, and the liquid holding tank is used to hold the sample; In this embodiment, multiple light-emitting units are linearly arranged on the curved surface corresponding to the inner sidewall of the arc-shaped substrate. During photolithography, the light-emitting units rotate relative to the liquid tank, and the light-emitting units can move up and down relative to the height direction of the sample to perform photolithography on the sample.

2. The photolithography apparatus according to claim 1, characterized in that, The arc-shaped substrate is configured as a circular structure, and multiple light-emitting units are arranged at equal intervals around the inner sidewall of the circular structure.

3. The photolithography apparatus according to claim 2, characterized in that, The arc length corresponding to the light-emitting unit is at least greater than half the circumference of the circular structure.

4. The photolithography apparatus according to claim 2, characterized in that, The plane formed by the multiple light-emitting units is the same horizontal plane.

5. The photolithography apparatus according to claim 1, characterized in that, The light intensity corresponding to each of the light-emitting units is adjustable.

6. The photolithography apparatus according to claim 1, characterized in that, The arc-shaped substrate includes a heat dissipation layer, a buffer layer, and a wiring layer; The buffer layer is disposed on the side of the heat dissipation layer near the light-emitting unit, the wiring layer is disposed on the side of the buffer layer near the light-emitting unit, the light-emitting unit is disposed on the wiring layer and electrically connected to the wiring layer.

7. The photolithography apparatus according to claim 6, characterized in that, The wiring layer is provided with a first groove, which is correspondingly disposed between two adjacent light-emitting units. The buffer layer is also provided with a through hole, and metal is disposed in the through hole. One end of the metal is in contact with the wiring layer, and the other end of the metal is in contact with the heat dissipation layer.

8. The photolithography apparatus according to claim 7, characterized in that, The diameter of the via on the side closer to the wiring layer is larger than the diameter of the via on the side closer to the heat dissipation layer.

9. The photolithography apparatus according to claim 1, characterized in that, The liquid-holding tank can be configured as any one of cylindrical, square, or spherical shapes.

10. The photolithography apparatus according to claim 1, characterized in that, The photolithography apparatus further includes a lens layer and an encapsulation layer. The encapsulation layer is disposed on the side of the light-emitting unit away from the substrate, and the lens layer is disposed on the side of the encapsulation layer away from the substrate. The encapsulation layer is further provided with a second groove, which is located on the side of the encapsulation layer near the light-emitting unit.

11. A stereolithography method using the photolithography apparatus according to any one of claims 1-10, characterized in that, include: The light-emitting unit is controlled to emit light, and the light-emitting unit is controlled to rotate relative to the sample placed in the liquid tank, so as to perform photolithography on the current layer of the sample; The sample is controlled to move up and down relative to the light-emitting unit along the height direction of the sample. At each layer position of the sample, the light-emitting unit is controlled to rotate relative to the sample held in the liquid tank, so as to perform photolithography on each layer of the sample.

12. The stereolithography method according to claim 11, characterized in that, The photolithography process for each layer of the sample includes: Determine the exposure dose corresponding to each layer, and adjust the luminous intensity of the light-emitting unit according to the exposure dose; The exposure dose mentioned herein includes: The exposure amount provided by each of the light-emitting units and the exposure coefficient corresponding to each light-emitting unit were measured respectively. Based on the exposure amount and the exposure coefficient, the exposure dose received by the film layer during the Kth exposure in the Mth time period is obtained; An exposure model is established, and the numerical value of the exposure dose is obtained iteratively.

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