Alignment error detection method, device, equipment and medium

Abstract

The present disclosure provides a kind of alignment error detection method, device, equipment and medium, it is related to semiconductor technology field.The method comprises: the deviation influence information of the lens performance deviation of first machine platform compared with second machine platform is acquired, wherein, deviation influence information is used to represent that the alignment mark of different exposure position on the alignment error deviation amount of first film layer generated by lens performance deviation;Based on deviation influence information, the mark weight of multiple alignment marks of first film layer is determined respectively, to determine the alignment error of first film layer compared with second film layer based on the alignment error value corresponding to multiple alignment marks respectively and the mark weight of multiple alignment marks respectively, wherein, the mark weight of each alignment mark is inversely related to the alignment error deviation amount of each alignment mark by lens performance deviation.According to the embodiment of the present disclosure, the detection precision of the alignment error of first film layer compared with second film layer can be improved.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor technology, and in particular to a method, apparatus, device and medium for detecting alignment error. Background Technology

[0002] In semiconductor manufacturing, to improve wafer manufacturing yield, it is often necessary to align the various film layers on the wafer. Since alignment error can measure the degree of alignment between film layers, how to measure the alignment error between film layers has become one of the research directions in the field of semiconductor technology.

[0003] However, in actual semiconductor manufacturing processes, the accuracy of alignment errors between film layers is often low. Therefore, improving the detection accuracy of alignment errors has become an urgent technical problem to be solved.

[0004] It should be noted that the information disclosed in the background section above is only used to enhance the understanding of the background of this disclosure, and therefore may include information that does not constitute prior art known to those skilled in the art. Summary of the Invention

[0005] This disclosure provides a method, apparatus, device, and medium for detecting alignment errors, which at least to some extent overcomes the problem of low accuracy in detecting alignment errors.

[0006] Other features and advantages of this disclosure will become apparent from the following detailed description, or may be learned in part from practice of this disclosure.

[0007] According to one aspect of this disclosure, a method for detecting alignment error is provided, the method comprising:

[0008] Obtain the deviation impact information of the lens performance deviation of the first machine station compared with the second machine station, wherein the first machine station is used to form the first film layer of the target wafer, and the second machine station is used to form the second film layer of the target wafer. The deviation impact information is used to characterize the alignment error deviation of the alignment mark at different exposure positions on the first film layer generated by the lens performance deviation.

[0009] Based on the deviation influence information, the labeling weights of multiple alignment markers in the first film layer are determined. Then, based on the alignment error values ​​corresponding to each alignment marker and their respective labeling weights, the alignment error of the first film layer relative to the second film layer is determined.

[0010] Among them, the marking weight of each alignment mark is inversely correlated with the alignment error deviation of each alignment mark due to the lens performance deviation.

[0011] In one embodiment, determining the label weights of multiple alignment markers in the first film layer based on deviation influence information includes:

[0012] Based on the deviation impact information, an abnormal marking region is determined in the first film layer, wherein the abnormal marking region is caused by the lens performance deviation, resulting in an alignment error offset of the first alignment mark in the region.

[0013] Among multiple alignment markers, the alignment markers in other unmarked abnormal regions are identified as the second alignment markers;

[0014] Assign a first label weight to the first alignment label and assign a second label weight to the second alignment label, wherein the first label weight is less than the second label weight.

[0015] In one embodiment, the first labeling weight is determined based on the ratio of the region width of the labeled abnormal region to the region width of the chip region, and the first labeling weight is positively correlated with the region width ratio.

[0016] The weight of the second label is a fixed value.

[0017] In one embodiment, determining the label weights of multiple alignment markers in the first film layer based on deviation influence information includes:

[0018] Based on lens deviation information, anomaly regions are identified and marked in the first film layer;

[0019] In cases where at least a portion of the marked anomaly region is located within the cut channel region, a third mark weight is assigned to the alignment mark located within at least a portion of the cut channel region;

[0020] When at least a portion of the marked abnormal region is located in the chip region, a fourth marking weight is assigned to the alignment marks located in at least a portion of the chip region, wherein the third marking weight is less than the fourth marking weight.

[0021] In one embodiment, assigning a fourth tag weight to a pair of tags located in at least a portion of a chip region includes:

[0022] Determine the ratio of the width of the portion of the chip area where the anomaly is marked to the width of the chip area.

[0023] Determine the fourth label weight corresponding to the region width ratio, and the fourth label weight is positively correlated with the region width ratio.

[0024] In one embodiment, the deviation impact information includes the alignment error of different machines at the same exposure position.

[0025] Based on lens deviation information, anomalous regions are identified and marked in the first film layer, including:

[0026] Obtain the first correspondence relationship, wherein the first correspondence relationship represents the correspondence between the first alignment error of the alignment mark forming a first exposure area by the first machine and the exposure position, and the first exposure area is distributed on the first film layer;

[0027] Obtain the second correspondence relationship, wherein the second correspondence relationship represents the correspondence between the second alignment error of the alignment mark in a second exposure area formed by the second machine tool through the photomask and the exposure position, the second exposure area is distributed on the second film layer, and the first exposure area and the second exposure area are formed by the same photomask;

[0028] Based on the first correspondence and the second correspondence, determine the target exposure position where the difference between the corresponding first alignment error and the corresponding second alignment error satisfies the preset anomaly judgment condition;

[0029] In the first film layer, the area corresponding to the target exposure position is identified as the marked abnormal area.

[0030] In one embodiment, in the first film layer, the region corresponding to the target exposure location is identified as a marked anomalous region, including:

[0031] In the first direction of the first film layer, the width range corresponding to the target exposure position is determined, which is then defined as the width range of the marked abnormal region;

[0032] In the first film layer, the length range of the marked abnormal region is determined in the second direction; wherein, the first direction is perpendicular to the exposure scanning direction, and the second direction is parallel to the exposure scanning direction;

[0033] The marked abnormal regions are determined on the first film layer based on the width and length range of the marked abnormal regions.

[0034] In one embodiment, the anomaly marking criteria include: the difference between the first alignment error and the second alignment error is greater than the maximum permissible alignment error; the target exposure location includes multiple exposure locations within the first anomaly range;

[0035] Based on the first and second correspondences, the target exposure positions where the difference between the corresponding first alignment error and the corresponding second alignment error satisfies the preset anomaly judgment conditions are determined, including:

[0036] Based on the first correspondence and the second correspondence, the range of exposure positions where the difference between the first alignment error and the second alignment error is greater than the maximum permissible alignment error is determined; the range of exposure positions is determined as the first abnormal range, where the difference between the first alignment error and the second alignment error at the exposure positions within the first abnormal range is greater than the maximum permissible alignment error of the first film layer.

[0037] In one embodiment, before determining the preset exposure location range as the width range of the marked abnormal region, the method further includes:

[0038] Obtain the process window information for the alignment marks of the first film layer;

[0039] Determine the maximum permissible alignment error corresponding to the process window information, where the maximum permissible alignment error is positively correlated with the process window information.

[0040] In one embodiment, the anomaly marking determination condition includes: the difference between the first alignment error and the second alignment error of the target exposure position is the maximum value among the differences between the first alignment error and the second alignment error of each exposure position in the first exposure area;

[0041] Based on the first and second correspondences, the target exposure positions where the difference between the corresponding first alignment error and the corresponding second alignment error satisfies the preset anomaly judgment conditions are determined, including:

[0042] Within the first exposure area, determine the exposure location corresponding to the maximum value of the difference between the first alignment error and the second alignment error;

[0043] The exposure location is determined as the target exposure location;

[0044] Determining the marked anomalous region in the first film layer includes: determining a second width range centered on the target exposure location;

[0045] The second width range is defined as the width range of the marked abnormal region.

[0046] In one embodiment, before obtaining the deviation impact information of the lens performance deviation between the first machine and the second machine, the method further includes:

[0047] For the first machine tool, perform at least one first lens performance deviation test to obtain at least one first correspondence. In each first lens performance deviation test, obtain the first alignment error of multiple alignment marks in a first exposure area formed by the first machine tool. The first exposure area is distributed in the first film layer. A first correspondence is generated based on the obtained first alignment error of multiple alignment marks and the exposure position of the alignment marks.

[0048] For the second machine tool, perform at least one second lens performance deviation test to obtain at least one second correspondence. In each second lens performance deviation test, obtain the second alignment error of multiple alignment marks in a second exposure area formed by the second machine tool. The second exposure area is distributed in the second film layer. A second correspondence is generated based on the obtained second alignment error of multiple alignment marks and the exposure position of the alignment marks.

[0049] Based on at least one first correspondence and at least one second correspondence, deviation influence information is obtained. The deviation influence information is used to characterize the alignment error deviation of different machines at the same exposure position.

[0050] In one embodiment, after identifying the marked anomalous region in the first film layer based on lens deviation information, the method further includes:

[0051] In the film layer of the first machine, determine the area to be exposed that corresponds to the marked abnormal area;

[0052] When the first machine exposes to the area to be exposed, the exposure parameters of the first machine are compensated according to the marking weight of the alignment mark.

[0053] According to another aspect of this disclosure, an alignment error detection device is provided, comprising:

[0054] The information acquisition module is used to acquire the deviation impact information of the lens performance deviation of the first machine station compared with the second machine station. The first machine station is used to form the first film layer of the target wafer, and the second machine station is used to form the second film layer of the target wafer. The deviation impact information is used to characterize the alignment error deviation of the alignment marks at different exposure positions on the first film layer generated by the lens performance deviation.

[0055] The weighting determination module is used to determine the label weights of each of the multiple alignment markers in the first film layer based on the deviation influence information. Based on the alignment error values ​​corresponding to each of the multiple alignment markers and their respective label weights, the alignment error of the first film layer relative to the second film layer is determined.

[0056] Among them, the marking weight of each alignment mark is inversely correlated with the alignment error deviation of each alignment mark due to the lens performance deviation.

[0057] According to another aspect of this disclosure, an electronic device is provided, comprising: a processor; and a memory for storing executable instructions of the processor; wherein the processor is configured to perform the above-described alignment error detection method by executing the executable instructions.

[0058] According to another aspect of this disclosure, a computer-readable storage medium is provided having a computer program stored thereon, which, when executed by a processor, implements the above-described alignment error detection method.

[0059] According to another aspect of this disclosure, a computer program product is provided, including a computer program that, when executed by a processor, implements the above-described alignment error detection method.

[0060] The alignment error detection method, apparatus, device, and medium provided in this disclosure can obtain deviation impact information of the lens performance deviation of the first machine compared to the second machine. Since the deviation impact information can characterize the alignment error deviation of the alignment marks at different exposure positions on the first film layer caused by the lens performance deviation, based on the deviation impact information, a smaller mark weight can be set for the alignment marks with a larger alignment error deviation on the first film layer, and a larger mark weight can be set for the alignment marks with a smaller alignment error deviation. Therefore, when calculating the alignment error of the first film layer compared to the second film layer using the alignment error values ​​and mark weights corresponding to the multiple alignment marks on the first film layer, the influence of the alignment error of the alignment marks with a larger alignment error deviation can be reduced, thereby improving the detection accuracy of the alignment error of the first film layer compared to the second film layer.

[0061] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and are not intended to limit this disclosure. Attached Figure Description

[0062] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this disclosure and, together with the description, serve to explain the principles of this disclosure. It is obvious that the drawings described below are merely some embodiments of this disclosure, and those skilled in the art can obtain other drawings based on these drawings without any inventive effort.

[0063] Figure 1 A schematic diagram of the wafer structure is shown;

[0064] Figure 2 A schematic diagram of an exposure machine is shown.

[0065] Figure 3 This diagram illustrates an exposure process for an alignment mark according to an embodiment of the present disclosure.

[0066] Figure 4 This diagram illustrates another exposure process for alignment marks provided in an embodiment of the present disclosure;

[0067] Figure 5 A schematic diagram illustrating the current film preparation process provided in the embodiments of this disclosure is shown;

[0068] Figure 6 A schematic diagram illustrating the preparation process of the reference film layer provided in the embodiments of this disclosure is shown;

[0069] Figure 7 A schematic diagram showing the alignment of the current film layer and the reference film layer is provided.

[0070] Figure 8A flowchart illustrating an alignment error detection method according to an embodiment of this disclosure is shown.

[0071] Figure 9 A schematic diagram of deviation impact information provided in an embodiment of this disclosure is shown;

[0072] Figure 10 A schematic diagram of an exemplary first exposure area provided by an embodiment of this disclosure is shown;

[0073] Figure 11 A schematic diagram illustrating another deviation impact information provided in an embodiment of this disclosure is shown;

[0074] Figure 12 This invention provides a graph illustrating the variation of overlay error in an embodiment of the present disclosure.

[0075] Figure 13 A schematic diagram of an alignment error detection device according to an embodiment of this disclosure is shown;

[0076] Figure 14 A schematic diagram of an exemplary alignment error detection device provided in an embodiment of this disclosure is shown.

[0077] Figure 15 This diagram illustrates a structural block diagram of an electronic device according to an embodiment of the present disclosure; and

[0078] Figure 16 A schematic diagram of a computer-readable storage medium is shown in an embodiment of the present disclosure. Detailed Implementation

[0079] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the examples set forth herein; rather, they are provided so that this disclosure will be more comprehensive and complete, and will fully convey the concept of the exemplary embodiments to those skilled in the art. The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.

[0080] Furthermore, the accompanying drawings are merely illustrative of this disclosure and are not necessarily drawn to scale. The same reference numerals in the drawings denote the same or similar parts, and therefore repeated descriptions of them will be omitted. Some block diagrams shown in the drawings are functional entities and do not necessarily correspond to physically or logically independent entities. These functional entities may be implemented in software, in one or more hardware modules or integrated circuits, or in different network and / or processor devices and / or microcontroller devices.

[0081] It should be understood that the steps described in the method embodiments of this disclosure may be performed in different orders and / or in parallel. Furthermore, the method embodiments may include additional steps and / or omit the steps shown. The scope of this disclosure is not limited in this respect.

[0082] It should be noted that the concepts of "first" and "second" mentioned in this disclosure are used only to distinguish different devices, modules or units, and are not used to limit the order of functions performed by these devices, modules or units or their interdependencies.

[0083] It should be noted that the terms "a" and "a plurality of" used in this disclosure are illustrative rather than restrictive, and those skilled in the art should understand that, unless otherwise expressly indicated in the context, they should be understood as "one or more".

[0084] In the field of semiconductor technology, to ensure alignment between adjacent film layers, during the exposure process of the current film layer, alignment with the previous layer can be achieved by first locating the alignment mark of the reference film layer, and then exposure and development are performed to form the current film layer. Alternatively, the degree of alignment between adjacent film layers can be determined by measuring the offset between the overlay marks of the current film layer and the reference film layer.

[0085] Therefore, since alignment errors such as overprinting error and alignment error can measure the degree of alignment between adjacent film layers, how to improve the detection accuracy of alignment errors such as overprinting error and alignment error has become an urgent technical problem to be solved.

[0086] To facilitate understanding of the relevant technical content involved in the embodiments of this disclosure, the wafer, exposure equipment, and other related contents will be described below in conjunction with the accompanying drawings.

[0087] Figure 1 A schematic diagram of the wafer structure is shown. (For example...) Figure 1 As shown, wafer 10 may include a dicing region 11 and multiple chip regions 12. Each dicing region 11 and each chip region may be provided with alignment marks and overlay marks. Figure 1 (Not shown).

[0088] After introducing the wafer structure, the exposure process will be explained using an exposure machine. Figure 2 A schematic diagram of an exposure machine is shown. Figure 2 As shown, the exposure equipment may include an illumination 21, a slit 22, a reticle 23, and a lens 24.

[0089] During the exposure process, light emitted by the light source 21 passes through the slit 22, the patterned photomask 23, and the lens 24 to expose the wafer 10 coated with photoresist. After exposure, the photoresist undergoes a property change, thereby transferring the pattern on the photomask 23 to the current film layer on the wafer.

[0090] During the exposure process, slit 22 will move along... Figure 2 The image is swept across the photomask in the direction indicated by the middle arrow to expose one exposure area (shot) on the wafer. Multiple chip areas on the wafer can be patterned using a single exposure area.

[0091] Specifically, the photomask 23 may include a marking pattern to form alignment marks corresponding to the marking pattern on the current film layer of the wafer by means of pattern transfer.

[0092] In passing Figure 1 and Figure 2 Having gained a preliminary understanding of the wafer and the exposure process, the relevant content involved in the embodiments of this disclosure will now be explained.

[0093] In one related technique, alignment error measurements of multiple alignment marks can be obtained, and then the average of the multiple alignment error measurements can be calculated to detect the alignment error of the first film layer relative to the second film layer. However, this alignment error detection method often has low accuracy.

[0094] Through research, the inventors discovered that different film layers on a wafer are often exposed using different exposure equipment. When using different equipment for the exposure process, tool bias may cause abnormal changes such as shift, variation, or shape changes in the alignment marks formed on the film layer.

[0095] For example, Figure 3 A schematic diagram of the exposure process for an alignment mark provided in an embodiment of this disclosure is shown. Figure 4 A schematic diagram of another alignment mark exposure process provided in an embodiment of this disclosure is shown.

[0096] like Figure 3 As shown, the light emitted from the first point source 31 of the normal exposure machine 30 is generated into spherical light through the normal projection lens 32. The formed spherical light can form normal alignment marks 13 on the wafer 10.

[0097] And, such as Figure 4As shown, the light emitted from the second point light source 41 of the abnormal exposure machine 40 passes through the lens 42, which has a lens performance deviation (projection lens different), and forms aspherical light. The aspherical light forms an abnormal alignment mark 14 on the wafer 10.

[0098] Combination Figure 3 and Figure 4 It is known that when there is a slight difference in the lens of the exposure machine, it will cause the alignment mark to shift or change.

[0099] as well as, Figure 5 A schematic diagram illustrating the fabrication process of the current film layer provided in this disclosure embodiment is shown. For example... Figure 5 As shown, the lens 52 of the exposure machine has local variations, meaning that not all areas of the entire lens have the same variation. Therefore, the lens performance deviation (lensaberration) of the lens 52 penetrated by the light source 51 when it reaches different areas of the current film layer L1 on the wafer is not the same. Accordingly, if there is no lens performance deviation, a normal alignment mark L11 can be formed on the current film layer L1, and if there is a lens performance deviation, an abnormal alignment mark L12 can be formed on the current film layer L1.

[0100] as well as, Figure 6 A schematic diagram illustrating the preparation process of the reference film layer provided in an embodiment of this disclosure is shown. Figure 6 As shown, if there is no local lens performance deviation in the lens 62 of the exposure machine, the light source 61 can form normal alignment marks L21 and L22 on the reference film layer L2 through the lens 62.

[0101] Figure 7 A schematic diagram showing the alignment of the current film layer and the reference film layer is displayed. Figure 7 As shown, when aligning the current film layer L1 and the reference film layer L2, the inventors discovered through research that the alignment degree between the normal alignment marks L11 and L21 is relatively high, and there is a certain alignment deviation between the abnormal alignment mark L12 and the normal alignment mark L22. If the alignment error of the abnormal alignment mark L22 compared with the normal alignment mark L22 is used to determine the alignment error of the current film layer L1 compared with the reference film layer L2, it will result in low detection accuracy of the alignment error between the film layers.

[0102] Based on this, embodiments of this disclosure provide a method, apparatus, device, and medium for detecting alignment errors, which can be applied in semiconductor exposure scenarios, such as for detecting overlay errors. Embodiments of this disclosure can adjust the marking weights of each alignment mark based on the deviation impact information of the lens performance deviation of the exposure equipment, thereby reducing the impact of alignment errors of alignment marks with large alignment error deviations and improving the detection accuracy of interlayer alignment errors.

[0103] Before introducing the specific technical solutions of the embodiments of this disclosure, the technical terms involved in the embodiments of this disclosure will be explained.

[0104] (1) Alignment marks are marks provided on the wafer film layers to align two film layers. For example, alignment marks may include overlay marks and / or alignment marks.

[0105] Among them, the overlay mark is a visible graphic set on the film layer for measuring overlay error. The alignment mark is a visible graphic set on the film layer for aligning the film layers.

[0106] Optionally, both the first and second membrane layers may include multiple alignment marks, wherein the multiple alignment marks on the first membrane layer correspond one-to-one with the multiple alignment marks on the second membrane layer.

[0107] (2) Overlay error (OVL) is an important parameter in semiconductor manufacturing. It measures the alignment quality between wafer layers and quantitatively describes the positional deviation between the current layer and the reference layer. The overlay error between film layers can be measured by measuring the overlay marks using dedicated metrology equipment, thereby measuring the positional deviation between film layers.

[0108] (3) Process window: This ensures that the pattern on the photoresist after photolithography meets the above requirements. To achieve this goal, all parameters in the photolithography process must be controlled within a small range, which is called the process window.

[0109] After introducing the above technical terms, the following detailed description of the exemplary implementation method is provided in conjunction with the accompanying drawings and embodiments.

[0110] This disclosure provides a method for detecting alignment errors. This method can be executed by any electronic device with alignment error detection function, such as an overlay error measuring device, and there are no specific limitations on it.

[0111] Figure 8 This diagram illustrates a flow chart of an alignment error detection method according to an embodiment of the present disclosure, as shown below. Figure 8As shown, the alignment error detection method provided in this embodiment includes the following steps S810 and S820.

[0112] S810: Obtain information on the impact of the lens performance deviation of the first machine tool compared to the second machine tool.

[0113] The following section explains the technical terms involved in S810, such as the first machine and the second machine.

[0114] The first equipment is used to form the first film layer on the target wafer. The description of the first equipment is provided above in the embodiments of this disclosure regarding the exposure equipment, and will not be repeated here.

[0115] The second equipment is used to form the second film layer on the target wafer. The second equipment can be referred to in the above description of the exposure equipment in the embodiments of this disclosure, and will not be repeated here. The first and second films can be films with a reciprocal relationship on the target wafer. For example, the first film layer can be formed on top of the second film layer, or both the first and second films can be formed on top of a certain film layer. There are no specific limitations on the positional relationship of the first and second films on the wafer.

[0116] The deviation impact information is used to characterize the alignment error deviation of the alignment marks at different exposure positions on the first film layer caused by lens performance deviation. The alignment error offset can be used to characterize the magnitude of the shift in alignment error caused by the alignment marks. For example, the alignment error offset at each exposure position can be the difference in alignment error between the alignment mark at that exposure position on the first film layer and the alignment mark at that exposure position on the second film layer, caused by lens performance deviation between the lenses of the first and second machines at that exposure position. As another example, the alignment error offset at each exposure position can be the positional deviation between the alignment mark at that exposure position on the first film layer and the alignment mark at that exposure position on the second film layer, caused by lens performance deviation between the lenses of the first and second machines at that exposure position. It should be noted that other physical quantities that can affect the alignment error can also be selected as the alignment error deviation, without specific limitations.

[0117] In some embodiments, the deviation impact information may include the alignment error of different machines at the same exposure position. For example, the alignment error may be calculated using the same reference film layer. Optionally, the deviation impact information may also include the alignment error of the first machine using a photomask corresponding to the first film layer and the second machine using a photomask corresponding to the second film layer at the same exposure position, without specific limitations.

[0118] In one embodiment, the deviation impact information may include a first correspondence and a second correspondence.

[0119] Specifically, the first correspondence represents the correspondence between the first alignment error of the alignment mark forming a first exposure area by the first machine and the exposure position, wherein the first exposure area is distributed on the first film layer. For example, the first correspondence can be a formula, a curve, an array of multiple sets of reference exposure positions and corresponding reference alignment errors, a data table, etc. It should be noted that the first correspondence can also be other forms that can characterize the changing relationship between alignment error and exposure position, without specific limitations.

[0120] Specifically, the second correspondence represents the correspondence between the second alignment error of the alignment mark within a second exposure area formed by the second machine using a photomask and the exposure position. The second exposure area is distributed on the second film layer. Optionally, to accurately assess the lens performance deviation of the first machine compared to the second machine, the first and second exposure areas can be formed using the same photomask. The first and second alignment errors can be calculated using reference marks corresponding to the first and second alignment marks in the same reference film layer. The reference film layer is prepared using a reference machine that determines that the lens performance has no deviation or is within the allowable deviation range. Alternatively, to ensure that the lens performance deviation conforms to the actual semiconductor manufacturing process, the first exposure area can be formed using the photomask used by the first machine in the actual wafer manufacturing process, and the second exposure area can be formed using the photomask used by the second machine in the actual wafer manufacturing process. It should be noted that the specific form of the second alignment relationship can be found in the above description of the first correspondence relationship, and will not be repeated here.

[0121] For example, taking the first correspondence as the first relationship curve and the second correspondence as the second relationship curve as an example, Figure 9 A schematic diagram illustrating deviation impact information provided in an embodiment of this disclosure is shown. For example... Figure 9 As shown, the deviation impact information may include multiple first relationship curves 91 shown by solid lines and multiple second relationship curves 92 shown by dashed lines.

[0122] pass Figure 9 It can be seen that the first relationship curve 91 represents the correspondence between the first alignment error of each alignment mark on the first film layer and the exposure position. The second relationship curve 92 represents the correspondence between the second alignment error of each alignment mark on the second film layer and the exposure position.

[0123] The target wafer can be a wafer for which alignment error calculations are required. For example, it can be a wafer that has already been fabricated or a wafer that is being fabricated, without specific limitations.

[0124] After introducing S810 using the aforementioned technical terms, S820 will now be explained.

[0125] S820, based on the deviation influence information, determine the label weights of each of the multiple alignment marks of the first film layer, so as to determine the alignment error of the first film layer relative to the second film layer based on the alignment error values ​​corresponding to each of the multiple alignment marks and the label weights of each of the multiple alignment marks.

[0126] The weight of each alignment mark is inversely correlated with the alignment error deviation of the lens performance for each alignment mark. In other words, the larger the alignment error deviation corresponding to an alignment mark, the smaller the weight of that mark. Similarly, the smaller the alignment error offset corresponding to an alignment mark, the larger its weight.

[0127] The alignment marks can be overlay marks and / or alignment marks. Accordingly, when the alignment marks include overlay marks, the alignment error can be overlay error, which can be used to measure overlay misalignment between film layers. And, when the alignment marks include alignment marks, the alignment error can be alignment error, which can be used to align film layers.

[0128] Furthermore, the alignment error D0 of the first film layer relative to the second film layer can satisfy the following formula (1):

[0129]

[0130] Where n represents the total number of alignment marks involved in the alignment error calculation within the first exposure area of ​​the first film layer, and n is any integer greater than or equal to 2. D i D represents the alignment error value of the i-th alignment mark, where D i This can be obtained by measuring the center offset between the i-th alignment mark on the first film layer and the corresponding alignment mark on the second film layer. ω i This represents the label weight of the i-th pair of labels.

[0131] Optionally, the sum of the tag weights of the n pairs of tags can be 1.

[0132] Having understood the above concepts, the specific implementation of S820 will be described next.

[0133] In some embodiments, a first alignment mark and a second alignment mark can be determined from the alignment marks in the first film layer, and different mark weights can be assigned to the first alignment mark and the second alignment mark. The first alignment mark is an abnormal alignment mark caused by positional shift or deformation due to lens performance deviation. The second alignment mark is a normal alignment mark, i.e., a mark that does not exhibit significant positional shift or deformation.

[0134] In one embodiment, a marking aberration region can be first determined on the first film layer, and then a first alignment marker and a second alignment marker can be determined based on the marking aberration region.

[0135] Accordingly, S820 may include the following steps A1 to A3.

[0136] Step A1: Based on the deviation influence information, identify the marking abnormal region in the first film layer. The marking abnormal region is defined as the region where the first alignment mark within the region experiences a misalignment due to lens performance deviation. In other words, the alignment mark within the marking abnormal region is the first alignment mark whose misalignment is caused by the lens performance deviation.

[0137] In step A1, an abnormal region can be marked in each exposure area of ​​the first film layer. For example, Figure 10 A schematic diagram of an exemplary first exposure area provided by an embodiment of this disclosure is shown. Figure 10 As shown, the shadowed area within the first exposure area 100 is the marking aberration area 110. Among them, the alignment marks M2 and M9 located within the marking aberration area are the first alignment marks.

[0138] In combination Figure 10 After showing the marked abnormal areas, the specific implementation of step A1 will be described next.

[0139] In one embodiment, when the deviation impact information includes the alignment error of different machines at the same exposure position, step A1 may include steps A11 to A14.

[0140] Step A11: Obtain the first correspondence relationship. The first correspondence relationship can be found in the above-described parts of the embodiments of this disclosure. Figure 9 The relevant explanations will not be repeated here. For example, the first correspondence may include one or more, and there is no limitation thereto. When there are multiple first correspondences, when calculating the first alignment error at a certain exposure position, the alignment error value corresponding to the exposure position in each of the first correspondences can be determined, and a value such as the average or other reference value can be calculated based on the alignment error values ​​of multiple first correspondences as the first alignment error at the exposure position.

[0141] Step A12: Obtain the second correspondence relationship. The second correspondence relationship can be found in conjunction with the above-described portions of the embodiments of this disclosure. Figure 9 The relevant explanations will not be repeated here. For example, the second correspondence may include one or more, and its specific content is similar to that of the first correspondence. Please refer to the relevant description of the first correspondence, which will not be repeated here.

[0142] Step A13: Based on the first correspondence and the second correspondence, determine the target exposure position where the difference between the corresponding first alignment error and the corresponding second alignment error satisfies the preset anomaly judgment condition.

[0143] The target exposure location can be one or more specific location points, or multiple exposure locations within at least one first anomaly range, without any specific restrictions.

[0144] Among them, the preset anomaly judgment condition can refer to the condition that needs to be met when the difference between the first alignment error and the corresponding second alignment error is abnormal.

[0145] In one example, the preset anomaly detection criteria may include the difference between the first alignment error and the second alignment error at the target exposure location being the maximum value among the differences between the first alignment error and the second alignment error at each exposure location in the first exposure area. For example, see [link to example]. Figure 9 Since the difference between the first alignment error and the second alignment error corresponding to exposure positions P1 and P2 is a maximum value, exposure positions P1 and P2 are the target exposure positions.

[0146] In another example, the preset anomaly detection condition may include: the difference between the first alignment error and the second alignment error is greater than the maximum permissible alignment error. For example, Figure 11 A schematic diagram illustrating another deviation impact information provided by an embodiment of this disclosure is shown. For example... Figure 11 As shown, if the difference between the first alignment error and the second alignment error at each exposure position in the exposure position range R1 and R2 is greater than the maximum permissible alignment error Dmax, then the target exposure position includes multiple exposure positions in the exposure position range R1 and R2.

[0147] The maximum permissible alignment error Dmax characterizes the maximum permissible alignment error in semiconductor manufacturing processes. The maximum permissible alignment error Dmax will be explained below.

[0148] In a specific example, the maximum permissible alignment error can be determined based on the process window information of the alignment marks of the first film layer.

[0149] Accordingly, the alignment error detection method provided in this embodiment may further include steps B1 and B2.

[0150] Step B1: Obtain the process window information for the alignment marks of the first film layer. For example, the process window information can characterize the parameter requirements for the alignment marks of the first film layer.

[0151] Step B2: Determine the maximum permissible alignment error corresponding to the process window information.

[0152] The maximum permissible alignment error is positively correlated with the process window information. That is, the larger the fluctuation range of the process window information, the larger the maximum permissible alignment error; the smaller the fluctuation range of the process window information, the smaller the maximum permissible alignment error.

[0153] In step B2, the correspondence between process window information and maximum permissible alignment error can be preset. The correspondence can be a corresponding function, a corresponding curve, or multiple sets of corresponding reference process window information and reference maximum permissible alignment error. There are no specific restrictions on this.

[0154] Through steps B1 and B2, since the process window information reflects the process requirements of the semiconductor process for the alignment marks on the first film layer, the larger the fluctuation range of the process window information, the higher the tolerance for alignment errors of the alignment marks. Conversely, the smaller the fluctuation range of the process window information, the lower the tolerance for alignment errors of the alignment marks. Accordingly, by determining the maximum allowable alignment error through the process window information, the size of the first abnormal range corresponding to the target exposure position and the number of first alignment marks can be adjusted according to the tolerance for alignment errors. Furthermore, the size of the marking abnormal region can be adjusted according to the tolerance for alignment errors of the alignment marks. The greater the tolerance for alignment errors, the smaller the area of ​​the marking abnormal region. In this case, alignment marks with larger alignment error deviations are selected as the first alignment marks. Conversely, the smaller the tolerance for alignment errors, the larger the area of ​​the marking abnormal region, allowing for the selection of more first alignment marks, thereby improving the flexibility and accuracy of alignment error detection.

[0155] In another specific example, the maximum permissible alignment error can be an empirical value, which can be set according to the specific exposure scenario and exposure requirements, without specific restrictions.

[0156] After introducing step A13, we will now explain step A14.

[0157] Step A14: In the first film layer, the area corresponding to the target exposure position is identified as the marked abnormal area.

[0158] In step A14, after determining the target exposure position, the width range corresponding to the target exposure position can be determined, and then an abnormal marking area can be determined based on the width range.

[0159] In one example, step A14 may include steps A141 through A143 as described below.

[0160] Step A141: In the first direction of the first film layer, the width range of the marked abnormal region is determined based on the width range corresponding to the target exposure position. The first direction is perpendicular to the exposure scan direction. For example, Figure 10 The x-direction represents the first direction.

[0161] For example, see [link to previous article] Figure 10 In the x-direction, the width range W corresponding to the target exposure position P1 can be determined.

[0162] Step A142: Determine the length range of the marked abnormal region in a second direction of the first film layer. The second direction is parallel to the exposure scanning direction. For example, Figure 10 The y-direction in the middle represents the second direction.

[0163] For example, the length range of each exposed area in the first film layer in the second direction can be determined as the length range for marking abnormal areas. See also... Figure 10 The length range L of the abnormal marker region can be determined in the Y direction.

[0164] It should be noted that the length range in the second direction can be determined based on the specific scanning situation and the actual scanning scenario, and no specific restrictions are imposed on it.

[0165] Step A143: Determine the marked anomalous region on the first film layer based on the width and length range of the marked anomalous region. For example, see [link to example]. Figure 10 The area enclosed by the long side corresponding to the length range L and the wide side corresponding to the width range W can be used as the marked abnormal area 110.

[0166] Through steps A141 to A143 described above, the marking abnormality region can be accurately determined within each exposure area of ​​the first film layer, using the target exposure position as a reference, thereby improving the detection accuracy of the alignment mark. Furthermore, when the length range is the same as the length range of each exposure area in the second direction, since the slit scanning behavior is consistent in the Y direction of the photomask, the marking abnormality region can be accurately determined based on the actual scanning behavior, further improving the detection accuracy of the alignment mark.

[0167] Since the target exposure location is involved when determining the marked abnormal area, and the target exposure location is related to the abnormal marking judgment condition, the following two examples will be used to explain steps A13 and A14 in conjunction with the abnormal marking judgment condition.

[0168] After introducing the maximum permissible alignment error, the specific implementation of step A13 will be explained next, based on the anomaly marking judgment condition corresponding to the maximum permissible alignment error.

[0169] In one example, when the anomaly marking criteria include the fact that the difference between the first alignment error and the second alignment error of the target exposure position is the maximum value among the differences between the first alignment error and the second alignment error of each exposure position in the first exposure area, step A13 may include steps A131 and A132.

[0170] Step A131: Within the first exposure area, determine the exposure position corresponding to the maximum value of the difference between the first alignment error and the second alignment error.

[0171] For example, continue with Figure 9 For example, the difference between the first alignment error and the second alignment error at exposure position P1 and exposure position P2 is Figure 9 The maximum value among the various differences shown.

[0172] Step A132: Determine the exposure location as the target exposure location.

[0173] For example, continue with Figure 9 For example, exposure positions P1 and P2 are the target exposure positions.

[0174] Accordingly, step A14 may include steps A144 and A145.

[0175] Step A144: Determine a second width range centered on the target exposure location. For example, continue with... Figure 10 Taking the exposure position P1 as an example, the second width range W centered on the target exposure position P1 can be determined.

[0176] Step A145: Determine the second width range as the width range of the marked abnormal region.

[0177] Optionally, the second width range is determined based on the number of alignment marks included in the exposure position. For example, the number of alignment marks within the second width is set to not exceed 20% of the total number of alignment marks in the exposure area to avoid inaccurate film alignment error calculation results.

[0178] Through steps A131-A132 and A144-A145, at the exposure position corresponding to the maximum value of the difference between the first and second alignment errors, the alignment mark at this exposure position has undergone a large positional shift or deformation or other abnormal changes. Since lens performance deviations often cause the alignment marks in a certain area to become abnormal, the abnormal alignment marks in the first film layer can be found quickly and accurately by using this exposure position as a reference. Furthermore, by assigning a lower alignment weight to the abnormal alignment marks, the detection efficiency can be balanced with the detection accuracy of the alignment error.

[0179] Optionally, the preset anomaly determination condition may include the positional deviation between the alignment mark on the first film layer at the target exposure position and the alignment mark on the second film layer at the target exposure position being the maximum value among the positional deviations at each exposure position.

[0180] It should be noted that the specific content of the preset anomaly judgment condition involving positional offset, and the specific implementation method based on the preset anomaly judgment condition, are similar to the preset anomaly judgment condition involving the difference between the first alignment error and the second alignment error. Please refer to the relevant descriptions for details, which will not be repeated here.

[0181] In another example, when the anomaly marking criteria include the difference between the first alignment error and the second alignment error being greater than the maximum permissible alignment error, step A13 may include steps A133 and A134.

[0182] Step A133: Based on the first correspondence and the second correspondence, determine the exposure position range where the difference between the first alignment error and the second alignment error is greater than the maximum allowable alignment error.

[0183] Step A134: The exposure location range is determined as the first abnormal range. Within the first abnormal range, the difference between the first alignment error and the second alignment error at the exposure location is greater than the maximum permissible alignment error of the first film layer. Optionally, the first abnormal range can also be a sub-interval of the exposure location range, or the exposure location range can be a sub-interval of the first abnormal range; there are no specific limitations on this.

[0184] For example, since the difference between the first alignment error and the second alignment error at each exposure position within the exposure position range R1 and R2 is greater than the maximum permissible alignment error Dmax, the exposure position ranges R1 and R2 are correspondingly the first abnormal range.

[0185] Accordingly, step A14 may include step A146.

[0186] Step A146 can be used to determine the first abnormal range as the width range of the marked abnormal region.

[0187] Through the above steps A133, A134 and A146, since lens performance deviations often lead to abnormal alignment marks, which will cause a difference between the first alignment error and the second alignment error, the alignment marks at the exposure position where the difference between the first alignment error and the second alignment error is too large are identified as abnormal alignment marks. In this way, abnormal alignment marks can be accurately identified in the first film layer, thereby improving the detection accuracy of alignment error.

[0188] Optionally, the preset anomaly determination conditions may include the positional deviation between the alignment mark on the first film layer at the target exposure position and the alignment mark on the second film layer at the target exposure position being greater than the maximum permissible alignment error.

[0189] It should be noted that the specific content of the preset anomaly judgment condition involving positional offset, and the specific implementation method based on the preset anomaly judgment condition, are similar to the preset anomaly judgment condition involving the difference between the first alignment error and the second alignment error. Please refer to the relevant descriptions for details, which will not be repeated here.

[0190] Through steps A11 to A14 above, the target exposure position that meets the preset anomaly judgment conditions can be determined first. Since the alignment mark at the target exposure position is shifted or deformed due to lens performance deviation, and lens performance deviation often causes the alignment mark in a region to shift due to alignment error, the target exposure position can be used as a reference to accurately determine the mark abnormal area where the alignment mark is abnormal, thereby improving the detection accuracy and efficiency of alignment error.

[0191] It should be noted that the embodiments of this disclosure may also use other methods to set the marked abnormal areas, and no specific limitations are imposed on them.

[0192] After explaining step A1 through steps A11 to A14 above, we will now continue to explain step A2.

[0193] Step A2: Among multiple alignment markers, identify the alignment markers in other unmarked abnormal regions as the second alignment markers.

[0194] For example, see [link to previous article] Figure 10 You can use the alignment marks in other regions besides the marked abnormal region as the second alignment marks, such as alignment marks M1, M3 to M8, and M10 to M11 as the second alignment marks.

[0195] Step A3 involves assigning a first label weight to the first alignment label and a second label weight to the second alignment label. The first label weight is less than the second label weight. Optionally, the first and second label weights can range from [0,1]. It should be noted that the first and second label weights can be dynamic or fixed values, without specific restrictions.

[0196] The first and second label weights will be explained through several examples.

[0197] In one example, the first label weight and the second label weight can be fixed values. For instance, the first label weight can be 0 and the second label weight can be 1. It should be noted that the first label weight and the second label weight can also be set to other values ​​according to the actual situation and specific needs, and there are no specific restrictions on this.

[0198] This example reduces the impact of the first alignment mark on the weighted calculation of alignment error, ensuring the accuracy of alignment error detection. Furthermore, setting both to constant values ​​improves the detection efficiency of alignment error and reduces the computational cost of assuming alignment errors.

[0199] In another example, the first labeling weight is determined based on the ratio of the area width of the labeled anomalous region to the area width of the chip region, and the first labeling weight is positively correlated with the area width ratio. The second labeling weight can be a fixed value. Exemplarily, the ratio of the area width of the labeled anomalous region to the area width of the chip region can be the ratio of their area widths perpendicular to the exposure scanning direction. The chip region can be the area containing a single chip, or a chip region within an exposure area; there is no specific limitation on this.

[0200] In this embodiment, the weight of the first marker can be flexibly set according to the ratio of the width of the marked abnormal region to the width of the chip region. Since the marked abnormal region occupies a large area of ​​the chip region when the width of the region is relatively large, the more alignment markers in the first film layer are divided into the first alignment markers. Correspondingly, the number of second alignment markers is relatively small. In order to prevent the small number of second alignment markers from failing to accurately reflect the alignment error, the weight of the first alignment marker can be set to a large value. Thus, the influence of the first alignment marker on the calculation result of the alignment error can be used to compensate for the problem that the number of second alignment markers is small and cannot accurately reflect the alignment error, thereby improving the calculation accuracy of the film layer alignment error.

[0201] Alternatively, the first marker weight can be determined directly based on the ratio of the number of alignment markers in the marked abnormal area to the total number of alignment markers in each exposed area of ​​the chip area or the first film layer. It should be noted that the first alignment weight can also be flexibly set according to other parameters, without specific restrictions.

[0202] In another example, the first and second label weights can be flexibly set according to the relevant label parameters of the alignment label or the relevant region parameters of the labeling abnormal region, without any specific restrictions.

[0203] Through steps A1 to A3 above, when the lens of the machine tool experiences lens performance deviation, when light passes through the lens portion causing the deviation and exposes the exposure area, it often leads to deformation or positional shift of the alignment marks within a certain area. Therefore, by first identifying the abnormal marking area and then assigning different weights to the first alignment mark within the abnormal marking area and the second alignment mark outside the abnormal marking area, abnormal alignment marks (i.e., the first alignment mark) and normal alignment marks (i.e., the second alignment mark) can be quickly and accurately identified in each exposure area. In the subsequent alignment error calculation process, the impact of abnormal alignment marks on the calculation results is reduced by using smaller weights, thus balancing the calculation efficiency and accuracy of alignment errors.

[0204] In some other embodiments, S820 may include steps A4 to A6 as described below.

[0205] Step A4: Based on the lens deviation information, identify the marked abnormal regions in the first film layer.

[0206] The specific details regarding the determination of marked abnormal regions can be found in the relevant descriptions in the above sections of the embodiments of this disclosure, and will not be repeated here.

[0207] Step A5: If at least a portion of the marked abnormal region is located within the cut channel region, assign a third mark weight to the alignment marks located within at least a portion of the cut channel region.

[0208] In one embodiment, the marked abnormal region can be entirely located within the cutting channel, in which case a third mark weight can be assigned to each pair of marks within the marked abnormal region.

[0209] In another embodiment, the first part of the marked abnormal region is located in the dicing channel and the second part is located in the chip region. At this time, a third marking weight can be assigned to the alignment mark in the first part.

[0210] Step A6: If at least a portion of the marked abnormal region is located within the chip region, assign a fourth marking weight to the alignment marks located within at least a portion of the chip region, where the third marking weight is less than the fourth marking weight. Optionally, the values ​​of the third and fourth marking weights can range from [0,1]. For example, if the pattern in the dicing area does not involve a chip device, the marking weight of the third alignment mark is set to 0, and the marking weight of the fourth alignment mark is greater than 0 and less than 1. For instance, the marking weight of the third alignment mark can be 0, and the marking weight of the fourth alignment mark can be 0.6. It should be noted that other values ​​can also be selected according to actual needs, which will not be elaborated further.

[0211] In one embodiment, the first part of the marked abnormal region is located in the dicing channel, and the second part is located in the chip region. At this time, a fourth marking weight can be assigned to the alignment mark in the second part.

[0212] In one embodiment, step A6 may include steps A61 and A62 as described below.

[0213] Step A61: Determine the ratio of the width of the portion of the chip area where the marked abnormal region is located to the width of the chip area.

[0214] Step A62: Determine the fourth label weight corresponding to the region width ratio. The fourth label weight is positively correlated with the region width ratio.

[0215] It should be noted that the specific details of steps A61 and A62 can be found in the above description of calculating the first label weight based on the region width ratio in the embodiments of this disclosure, and will not be repeated here.

[0216] In this embodiment, the size of the fourth marker weight can be flexibly set according to the ratio of the area width of the marked abnormal area to the area of ​​the chip region. Since the marked abnormal area occupies a large area of ​​the chip region when the area width is relatively large, a large number of alignment marks in the first film layer are divided into alignment marks corresponding to the fourth marker weight. In order to prevent the alignment error calculation accuracy from being affected when the weight of a large number of alignment marks corresponding to the fourth marker weight is low, the fourth marker weight can be set to a large value, thereby improving the calculation accuracy of the alignment error.

[0217] It should be noted that the specific methods for determining the third and fourth label weights can be found in the above description of the first label weight in the embodiments of this disclosure. For example, they can both be set to fixed values, or they can be flexibly set according to specific parameters, which will not be repeated here.

[0218] Through steps A4 to A6, since the number of alignment marks within the chip area is relatively small, a larger fourth mark weight is assigned to the alignment marks located in the overlapping area between the chip area and the mark abnormality area. This avoids the impact of using fewer alignment marks to calculate the alignment error on the calculation results. Conversely, since the number of alignment marks within the dicing channel is relatively large, a smaller third mark weight is assigned to the alignment marks located in the overlapping area between the dicing channel area and the mark abnormality area. This ensures that a sufficient number of alignment marks participate in the alignment mark calculation while reducing the impact of abnormal alignment marks on the calculation results. Therefore, the accuracy of alignment error detection is guaranteed.

[0219] It should be noted that in S820, the label weights of each alignment mark in the first film layer can also be set in other ways according to the deviation influence information. For example, they can be set based on the correspondence between the alignment error offset and the label weight. This correspondence can be set as an inverse proportional function or an inverse proportional curve, and there are no specific restrictions on this.

[0220] The alignment error detection method provided in this embodiment can obtain the deviation influence information of the lens performance deviation of the first machine compared with the second machine. Since the deviation influence information can characterize the alignment error deviation of the alignment marks at different exposure positions on the first film layer caused by the lens performance deviation, based on the deviation influence information, a smaller mark weight can be set for the alignment marks with a larger alignment error deviation on the first film layer, and a larger mark weight can be set for the alignment marks with a smaller alignment error deviation. Therefore, when calculating the alignment error of the first film layer compared with the second film layer using the alignment error values ​​and mark weights of the multiple alignment marks on the first film layer, the influence of the alignment error of the alignment marks with a larger alignment error deviation can be reduced, thereby improving the detection accuracy of the alignment error of the first film layer compared with the second film layer.

[0221] Furthermore, it should be noted that the inventors discovered through experiments that when the alignment error is a form of overlay error, the process window for improving the overlay error of the first film layer can be improved; and when the alignment error is a form of alignment error, the process window for improving the alignment error of the first film layer can be improved. For example, taking the alignment error as an example of overlay error... Figure 12 A graph showing the variation of overlay error provided in the embodiments of this disclosure is shown. The inventors discovered through experimental research that, as... Figure 12 As shown, curve 121 represents the overprinting error at each exposure position when the weight of the alignment markers within the abnormal marking area is set to 1. Curve 122 represents the overprinting error at each exposure position when the weight of the alignment markers within the abnormal marking area is set to 0.

[0222] As can be seen from the first curve 121 and the second curve 122, the alignment error detection scheme of this embodiment can improve the film alignment error value (OVL window) by about 1 nm. It should be noted that the specific improvement value of the film alignment error can be changed according to the actual situation and specific needs, and there is no specific limitation thereto.

[0223] In some embodiments, prior to step S810, the alignment error detection method may further include steps C1 to C3 as described below.

[0224] Step C1: Perform at least one first lens performance deviation test on the first machine to obtain at least one first correspondence. Specifically, in each first lens performance deviation test, acquire the first alignment error of all alignment marks within a first exposure area formed by the first machine, where the first exposure area is distributed within the first film layer; generate a first correspondence based on the acquired first alignment errors of the multiple alignment marks and the exposure positions of the alignment marks.

[0225] The first correspondence can be a relation function, such as... Figure 9 The relationship curve shown in the first relationship curve 91 is either a corresponding relationship table or there are no specific restrictions on it.

[0226] Alternatively, a first correspondence can be generated based on the marking positions of multiple alignment markers and the exposure positions, without any specific restrictions.

[0227] Optionally, step C1 may include step C11.

[0228] Step C11, during the installation phase and / or periodic maintenance (PM) phase of the first machine, perform at least one first lens performance deviation test.

[0229] Through this embodiment, a new first correspondence can be generated during the installation phase and / or periodic maintenance phase, ensuring the accuracy of the first correspondence while not affecting the normal semiconductor manufacturing process of the first machine, thus ensuring semiconductor manufacturing efficiency.

[0230] Step C2: Perform at least one second lens performance deviation test on the second machine to obtain at least one second correspondence. In each second lens performance deviation test, obtain the second alignment error of multiple alignment marks in a second exposure area formed by the second machine. The second exposure area is distributed in the second film layer. Generate a second correspondence based on the obtained second alignment errors of the multiple alignment marks and the exposure positions where the alignment marks are located.

[0231] The second correspondence can be a relation function, such as... Figure 9The relationship curve shown in the second relationship curve 92 is either a corresponding relationship table or there are no specific restrictions on it.

[0232] Alternatively, a second correspondence can be generated based on the marking positions and exposure positions of multiple alignment markers, without any specific restrictions.

[0233] Alternatively, other reference machines can be used to generate the second correspondence, without specific restrictions.

[0234] Optionally, step C2 may include step C21.

[0235] Step C21, during the installation and / or periodic maintenance phases of the second machine, perform at least one second lens performance deviation test.

[0236] This embodiment allows for the generation of a new second correspondence during the installation and / or periodic maintenance phases. This ensures the accuracy of the second correspondence without affecting the normal semiconductor manufacturing process of the second machine, thus guaranteeing semiconductor manufacturing efficiency.

[0237] Step C3: Based on at least one first correspondence and at least one second correspondence, deviation influence information is obtained. The deviation influence information is used to characterize the alignment error deviation of different machines at the same exposure position.

[0238] For example, both the first and second correspondences are calculated using the same reference film layer. A reference film layer is prepared in a reference instrument, and then a first film layer is obtained using a first instrument, and a second film layer is obtained using a second instrument. The first relationship is determined by the positional deviation of each alignment mark in the first film layer from each alignment mark in the reference film layer, and the second relationship is determined by the positional deviation of each alignment mark in the second film layer from each alignment mark in the reference film layer.

[0239] Optionally, the deviation impact information can be obtained by summarizing based on at least one first correspondence and at least one second correspondence. Alternatively, the deviation of the alignment mark at each exposure position can be calculated based on the first and second correspondences to obtain the deviation impact information; no specific limitation is imposed on this. Through the above steps C1 to C3, the deviation impact information can be pre-generated based on the first and second correspondences through lens performance deviation testing. While not affecting the alignment error detection process, a large amount of test data ensures that the deviation impact information can accurately reflect the lens performance deviation between the first and second machines, thereby ensuring the detection accuracy of the alignment error.

[0240] In some embodiments, after identifying the marked abnormal region, the alignment error detection method further includes steps D1 to D2 as described below.

[0241] Step D1: Determine the area to be exposed in the film layer of the first machine that corresponds to the marked abnormal area.

[0242] Step D2: When the first machine exposes to the area to be exposed, the exposure parameters of the first machine are compensated according to the marking weight of the alignment mark.

[0243] For example, the exposure parameters can be parameters that can adjust the position or shape of the alignment mark, such as light uniformity, light intensity, and light angle, and there are no specific limitations on these parameters.

[0244] Through steps D1 and D2, during the subsequent manufacturing process of the alignment marks in the first film layer, when the exposure machine scans the same abnormal marking area, the exposure parameters can be adjusted by means of exposure parameter compensation. By improving the light intensity and angle, the position of the alignment marks in the abnormal marking area is compensated, the degree of pattern deformation in the abnormal marking area is reduced, the calculation accuracy of subsequent alignment errors is improved, and the structural accuracy of the alignment marks is enhanced.

[0245] In some embodiments, the alignment error detection method may further include the following step E1.

[0246] Step E1: Based on the alignment error, adjust the relative positions between the first and second films of the subsequent wafers manufactured after the target wafer.

[0247] Through this embodiment, the alignment accuracy of the first and second films on the subsequent wafer can be improved by using alignment error feedback, thereby gradually improving the alignment accuracy of the wafer and increasing the wafer manufacturing yield.

[0248] Based on the same inventive concept, this disclosure also provides an alignment error detection device, as shown in the following embodiments.

[0249] Figure 13 A schematic diagram of an alignment error detection device according to an embodiment of this disclosure is shown, as follows: Figure 13 As shown, the alignment error detection device 1300 includes an information acquisition module 1310 and a weight determination module 1320.

[0250] The information acquisition module 1310 is used to acquire deviation impact information of lens performance deviation of the first machine station compared with the second machine station, wherein the first machine station is used to form a first film layer of the target wafer, and the second machine station is used to form a second film layer of the target wafer, and the deviation impact information is used to characterize the alignment error deviation of the alignment mark at different exposure positions on the first film layer generated by the lens performance deviation.

[0251] The weight determination module 1320 is used to determine the label weights of each of the multiple alignment markers in the first film layer based on the deviation influence information, so as to determine the alignment error of the first film layer relative to the second film layer based on the alignment error values ​​corresponding to each of the multiple alignment markers and the label weights of the multiple alignment markers.

[0252] Among them, the marking weight of each alignment mark is inversely correlated with the alignment error deviation of each alignment mark due to the lens performance deviation.

[0253] The alignment error detection device provided in this embodiment can acquire deviation impact information of the lens performance deviation between the first and second machines. Since the deviation impact information can characterize the alignment error deviation of the alignment marks at different exposure positions on the first film layer caused by the lens performance deviation, based on the deviation impact information, a smaller mark weight can be set for the alignment marks with a larger alignment error deviation on the first film layer, and a larger mark weight can be set for the alignment marks with a smaller alignment error deviation. Therefore, when calculating the alignment error of the first film layer compared to the second film layer using the alignment error values ​​and mark weights corresponding to the multiple alignment marks on the first film layer, the influence of the alignment error of the alignment marks with a larger alignment error deviation can be reduced, thereby improving the detection accuracy of the alignment error of the first film layer compared to the second film layer.

[0254] In one embodiment, the weight determination module 1320 includes:

[0255] The region determination unit is used to determine the marking abnormal region in the first film layer based on the deviation influence information, wherein the marking abnormal region is caused by the lens performance deviation, resulting in the alignment error offset of the first alignment mark in the region.

[0256] The marker determination unit is used to determine, among multiple alignment markers, the alignment marker in other unmarked abnormal regions as the second alignment marker;

[0257] The first weight allocation unit is used to allocate a first tag weight to the first alignment tag and a second tag weight to the second alignment tag, wherein the first tag weight is less than the second tag weight.

[0258] In one embodiment, the first labeling weight is determined based on the ratio of the region width of the labeled abnormal region to the region width of the chip region, and the first labeling weight is positively correlated with the region width ratio.

[0259] The weight of the second label is a fixed value.

[0260] In one embodiment, the weight determination module 1320 includes:

[0261] A region determination unit is used to determine marked abnormal regions in the first film layer based on lens deviation information;

[0262] The second weight allocation unit is used to allocate a third mark weight to the alignment mark located in at least a portion of the cut track region when at least a portion of the marked abnormal region is located in the cut track region.

[0263] The third weight allocation unit is used to assign a fourth mark weight to the alignment mark located in at least a portion of the chip region when at least a portion of the marked abnormal region is located in the chip region. The third mark weight is less than the fourth mark weight.

[0264] In one embodiment, the third weight allocation unit includes:

[0265] The width ratio determination sub-unit is used to determine the width ratio of the portion of the chip area where the marked abnormal region is located to the area of ​​the chip area.

[0266] The weight allocation subunit is used to determine the fourth label weight corresponding to the region width ratio, and the fourth label weight is positively correlated with the region width ratio.

[0267] In one embodiment, the deviation impact information includes the alignment error of different machines at the same exposure position.

[0268] The area definition unit includes:

[0269] The first relationship acquisition subunit is used to acquire the first correspondence relationship, wherein the first correspondence relationship represents the correspondence between the first alignment error of the alignment mark of the first exposure area formed by the first machine and the exposure position, and the first exposure area is distributed on the first film layer;

[0270] The second relationship acquisition subunit is used to acquire the second correspondence relationship, wherein the second correspondence relationship represents the correspondence between the second alignment error of the alignment mark in a second exposure area formed by the second machine tool through the photomask and the exposure position. The second exposure area is distributed on the second film layer, and the first exposure area and the second exposure area are formed by the same photomask.

[0271] The position determination subunit is used to determine the target exposure position where the difference between the corresponding first alignment error and the corresponding second alignment error satisfies the preset anomaly judgment condition, based on the first correspondence and the second correspondence.

[0272] The region determination subunit is used to determine the region corresponding to the target exposure position as the marked abnormal region in the first film layer.

[0273] In one embodiment, the region-determining subunit is configured as follows:

[0274] In the first direction of the first film layer, the width range corresponding to the target exposure position is determined, which is then defined as the width range of the marked abnormal region;

[0275] In the first film layer, the length range of the marked abnormal region is determined in the second direction; wherein, the first direction is perpendicular to the exposure scanning direction, and the second direction is parallel to the exposure scanning direction;

[0276] The marked abnormal regions are determined on the first film layer based on the width and length range of the marked abnormal regions.

[0277] In one embodiment, the anomaly marking criteria include: the difference between the first alignment error and the second alignment error is greater than the maximum permissible alignment error; the target exposure location includes multiple exposure locations within the first anomaly range;

[0278] The location-determining subunit is configured as follows:

[0279] Based on the first correspondence and the second correspondence, the range of exposure positions where the difference between the first alignment error and the second alignment error is greater than the maximum permissible alignment error is determined; the range of exposure positions is determined as the first abnormal range, where the difference between the first alignment error and the second alignment error at the exposure positions within the first abnormal range is greater than the maximum permissible alignment error of the first film layer.

[0280] In one embodiment, the alignment error detection device 1300 further includes:

[0281] The information acquisition module is used to acquire the process window information of the alignment marks of the first film layer;

[0282] The parameter determination module is used to determine the maximum permissible alignment error corresponding to the process window information, wherein the maximum permissible alignment error is positively correlated with the process window information.

[0283] In one embodiment, the anomaly marking determination condition includes: the difference between the first alignment error and the second alignment error of the target exposure position is the maximum value among the differences between the first alignment error and the second alignment error of each exposure position in the first exposure area;

[0284] The location-determining subunit is configured as follows:

[0285] Within the first exposure area, determine the exposure location corresponding to the maximum value of the difference between the first alignment error and the second alignment error;

[0286] The exposure location is determined as the target exposure location;

[0287] The region defines the sub-units, which are configured as follows:

[0288] Determine a second width range centered on the target exposure location;

[0289] The second width range is defined as the width range of the marked abnormal region.

[0290] In one embodiment, the alignment error detection device 1300 further includes:

[0291] The first testing module is used to perform at least one first lens performance deviation test on the first machine tool to obtain at least one first correspondence. In each first lens performance deviation test, the first alignment error of multiple alignment marks in a first exposure area formed by the first machine tool is obtained, and the first exposure area is distributed in the first film layer. A first correspondence is generated based on the obtained first alignment error of multiple alignment marks and the exposure position of the alignment marks.

[0292] The second testing module is used to perform at least one second lens performance deviation test on the second machine tool to obtain at least one second correspondence. In each second lens performance deviation test, the second alignment error of multiple alignment marks in a second exposure area formed by the second machine tool is obtained, and the second exposure area is distributed in the second film layer. A second correspondence is generated based on the obtained second alignment error of multiple alignment marks and the exposure position of the alignment marks.

[0293] The deviation information generation module is used to obtain deviation influence information based on at least one first correspondence and at least one second correspondence. The deviation influence information is used to characterize the alignment error deviation of different machines at the same exposure position.

[0294] In one embodiment, the alignment error detection device 1300 further includes:

[0295] The area to be exposed module is used to determine the area to be exposed in the film layer of the first machine that corresponds to the marked abnormal area;

[0296] The parameter compensation module is used to compensate the exposure parameters of the first machine according to the marking weight of the alignment mark when the first machine exposes to the area to be exposed.

[0297] It should be noted that, Figure 13 The alignment error detection device 1300 shown can perform... Figures 8 to 12 The various steps in the method embodiment shown are implemented. Figures 8 to 12 The various processes and effects in the method embodiments shown are not elaborated here.

[0298] In one embodiment, Figure 14 A schematic diagram of an exemplary alignment error detection device provided in an embodiment of this disclosure is shown.

[0299] like Figure 14The alignment detection device may include an information processing system 141 and a processing system 142. The information processing system 141 can systematically capture information and store data.

[0300] Specifically, the information processing system 141 can acquire photomask information such as photomask size, marker placement position, and chip area width. This photomask information can be pre-entered into the information processing system 141.

[0301] The information processing system 141 can also acquire information about the impact of deviations, such as capturing lens test data (such as first correspondence, second correspondence) generated during the periodic maintenance phase.

[0302] In addition, the information processing system can also acquire process information. Process information may include process window information related to the exposure process, such as alignment mark information.

[0303] Furthermore, the processing system 142 can be used to automatically calculate the weights of the alignment markers and provide information feedback. For example, it can achieve a combination of... Figure 13 The functions of the alignment error detection device shown will not be elaborated further.

[0304] Those skilled in the art will understand that various aspects of this disclosure can be implemented as a system, method, or program product. Therefore, various aspects of this disclosure can be specifically implemented in the following forms: a completely hardware implementation, a completely software implementation (including firmware, microcode, etc.), or a combination of hardware and software aspects, collectively referred to herein as a "circuit," "module," or "system."

[0305] The following reference Figure 15 To describe an electronic device 1500 according to such an embodiment of the present disclosure. Figure 15 The electronic device 1500 shown is merely an example and should not be construed as limiting the functionality and scope of use of the embodiments disclosed herein.

[0306] like Figure 15 As shown, the electronic device 1500 is manifested in the form of a general-purpose computing device. The components of the electronic device 1500 may include, but are not limited to: at least one processing unit 1510, at least one storage unit 1520, and a bus 1530 connecting different system components (including storage unit 1520 and processing unit 1510).

[0307] The storage unit stores program code that can be executed by the processing unit 1510, causing the processing unit 1510 to perform the steps described in the "Exemplary Methods" section above according to various exemplary embodiments of this disclosure.

[0308] Storage unit 1520 may include readable media in the form of volatile storage units, such as random access memory (RAM) 15201 and / or cache memory 15202, and may further include read-only memory (ROM) 15203.

[0309] Storage unit 1520 may also include a program / utility 15204 having a set (at least one) program module 15205, such program module 15205 including but not limited to: operating system, one or more application programs, other program modules and program data, each or some combination of these examples may include an implementation of a network environment.

[0310] Bus 1530 can represent one or more of several types of bus structures, including a memory cell bus or memory cell controller, a peripheral bus, a graphics acceleration port, a processing unit, or a local bus using any of the various bus structures.

[0311] Electronic device 1500 can also communicate with one or more external devices 1540 (e.g., keyboard, pointing device, Bluetooth device, etc.), and with one or more devices that enable a user to interact with electronic device 1500, and / or with any device that enables electronic device 1500 to communicate with one or more other computing devices (e.g., router, modem, etc.). Such communication can be performed through input / output (I / O) interface 1550.

[0312] Furthermore, the electronic device 1500 can also communicate with one or more networks (such as local area networks (LANs), wide area networks (WANs), and / or public networks, such as the Internet) via the network adapter 1560.

[0313] like Figure 15 As shown, network adapter 1560 communicates with other modules of electronic device 1500 via bus 1530.

[0314] It should be understood that, although not shown in the figure, other hardware and / or software modules may be used in conjunction with the electronic device 1500, including but not limited to: microcode, device drivers, redundant processing units, external disk drive arrays, RAID systems, tape drives, and data backup storage systems.

[0315] From the above description of the embodiments, those skilled in the art will readily understand that the exemplary embodiments described herein can be implemented by software or by combining software with necessary hardware. Therefore, the technical solutions according to the embodiments of this disclosure can be embodied in the form of a software product, which can be stored in a non-volatile storage medium (such as a CD-ROM, USB flash drive, external hard drive, etc.) or on a network, including several instructions to cause a computing device (such as a personal computer, server, terminal device, or network device, etc.) to execute the methods according to the embodiments of this disclosure.

[0316] In exemplary embodiments of this disclosure, a computer-readable storage medium is also provided, which may be a readable signal medium or a readable storage medium. Figure 16 This illustration shows a schematic diagram of a computer-readable storage medium according to an embodiment of the present disclosure, such as... Figure 16 As shown, the computer-readable storage medium 1600 stores a program product capable of implementing the methods described above.

[0317] In some possible implementations, various aspects of this disclosure may also be implemented as a program product comprising program code that, when run on a terminal device, causes the terminal device to perform the steps described in the “Exemplary Methods” section of this specification according to various exemplary embodiments of this disclosure.

[0318] More specific examples of computer-readable storage media in this disclosure may include, but are not limited to: electrical connections having one or more wires, portable computer disks, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fiber, portable compact disk read-only memory (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination of the foregoing.

[0319] In this disclosure, a computer-readable storage medium may include a data signal propagated in baseband or as part of a carrier wave, wherein readable program code is carried. Such propagated data signals may take various forms, including but not limited to electromagnetic signals, optical signals, or any suitable combination thereof.

[0320] A readable signal medium can also be any readable medium other than a readable storage medium, which can send, propagate or transmit a program for use by or in connection with an instruction execution system, apparatus or device.

[0321] In some examples, program code contained on a computer-readable storage medium may be transmitted using any suitable medium, including but not limited to wireless, wired, optical fiber, RF, etc., or any suitable combination thereof.

[0322] In practical implementation, program code for performing the operations of this disclosure can be written using any combination of one or more programming languages, including object-oriented programming languages ​​such as Java and C++, and conventional procedural programming languages ​​such as C or similar languages. The program code can be executed entirely on the user's computing device, partially on the user's computing device, as a standalone software package, partially on the user's computing device and partially on a remote computing device, or entirely on a remote computing device or server.

[0323] In cases involving remote computing devices, the remote computing devices can be connected to user computing devices via any type of network, including local area networks (LANs) or wide area networks (WANs), or they can be connected to external computing devices (e.g., via the Internet using an Internet service provider).

[0324] This disclosure provides a computer program product or computer program including computer instructions stored in a computer-readable storage medium. A processor of a computer device reads the computer instructions from the computer-readable storage medium and executes the computer instructions, causing the computer device to perform the alignment error detection method provided in various alternative embodiments of this disclosure.

[0325] It should be noted that although several modules or units for the device used to perform actions have been mentioned in the detailed description above, this division is not mandatory. In fact, according to embodiments of this disclosure, the features and functions of two or more modules or units described above can be embodied in one module or unit. Conversely, the features and functions of one module or unit described above can be further divided and embodied by multiple modules or units.

[0326] Furthermore, although the steps of the method in this disclosure are described in a specific order in the accompanying drawings, this does not require or imply that the steps must be performed in that specific order, or that all the steps shown must be performed to achieve the desired result. Additional or alternative steps may be omitted, multiple steps may be combined into one step, and / or a step may be broken down into multiple steps.

[0327] From the above description of the embodiments, those skilled in the art will readily understand that the exemplary embodiments described herein can be implemented by software or by combining software with necessary hardware.

[0328] Therefore, the technical solution according to the embodiments of this disclosure can be embodied in the form of a software product, which can be stored in a non-volatile storage medium (such as a CD-ROM, USB flash drive, mobile hard drive, etc.) or on a network, including several instructions to cause a computing device (such as a personal computer, server, mobile terminal, or network device, etc.) to execute the method according to the embodiments of this disclosure.

[0329] Other embodiments of this disclosure will readily occur to those skilled in the art upon consideration of the specification and practice of the invention disclosed herein.

[0330] This disclosure is intended to cover any variations, uses, or adaptations of this disclosure that follow the general principles of this disclosure and include common knowledge or customary techniques in the art not disclosed herein. The description and examples are to be considered exemplary only, and the true scope and spirit of this disclosure are indicated by the appended claims.

Claims

1. A method for detecting alignment error, characterized in that, The method includes: The deviation impact information of the lens performance deviation of the first machine station compared with the second machine station is obtained. The first machine station is used to form a first film layer of the target wafer, and the second machine station is used to form a second film layer of the target wafer. The deviation impact information is used to characterize the alignment error deviation of the alignment mark at different exposure positions on the first film layer caused by the lens performance deviation of the lens of the first machine station and the lens of the second machine station at the exposure position. The alignment error deviation is the difference in alignment error between the alignment mark at the exposure position on the first film layer and the alignment mark at the exposure position on the second film layer caused by the lens performance deviation of the lens of the first machine station and the lens of the second machine station at the exposure position. Based on the deviation influence information, the label weights of each of the multiple alignment marks in the first film layer are determined, so as to determine the alignment error of the first film layer relative to the second film layer based on the alignment error value corresponding to each of the multiple alignment marks and the label weights of each of the multiple alignment marks; wherein, the label weight of each alignment mark is inversely correlated with the alignment error deviation of each alignment mark due to the lens performance deviation. The step of determining the label weights of the multiple alignment markers in the first film layer based on the deviation influence information includes: Based on the deviation impact information, an abnormal marking region is determined in the first film layer, wherein the abnormal marking region is caused by the lens performance deviation, resulting in an alignment error offset of the first alignment mark in the region; Among the plurality of alignment marks, the alignment marks in other unmarked abnormal regions are identified as the second alignment marks; Assign a first label weight to the first alignment label and assign a second label weight to the second alignment label, wherein the first label weight is less than the second label weight.

2. The method according to claim 1, characterized in that, The first labeling weight is determined based on the ratio of the region width of the labeled abnormal region to the region width of the chip region, and the first labeling weight is positively correlated with the region width ratio; The second label weight is a fixed value.

3. The method according to claim 1, characterized in that, The step of determining the label weights of the multiple alignment markers in the first film layer based on the deviation influence information includes: Based on the deviation impact information, anomaly regions are identified and marked in the first film layer; In the case where at least a portion of the marked abnormal region is located within the cut channel region, a third mark weight is assigned to the alignment marks located within at least a portion of the cut channel region; When at least a portion of the marked abnormal region is located in the chip region, a fourth mark weight is assigned to the alignment mark located in at least a portion of the chip region, wherein the third mark weight is less than the fourth mark weight.

4. The method according to claim 3, characterized in that, Assigning a fourth tag weight to the alignment tags located in at least a portion of the chip region includes: Determine the ratio of the width of the portion of the chip region where the marked abnormal region is located to the width of the chip region; A fourth label weight is determined corresponding to the region width ratio, and the fourth label weight is positively correlated with the region width ratio.

5. The method according to claim 2 or 3, characterized in that, The deviation impact information includes the alignment error of different machines at the same exposure position. The step of identifying and marking abnormal regions in the first film layer based on the deviation impact information includes: Obtain a first correspondence relationship, wherein the first correspondence relationship represents the correspondence between the first alignment error of the alignment mark of the first exposure area formed by the first machine and the exposure position, and the first exposure area is distributed on the first film layer; Obtain a second correspondence, wherein the second correspondence represents the correspondence between the second alignment error of the alignment mark in a second exposure area formed by the second machine tool through the photomask and the exposure position, the second exposure area is distributed on the second film layer, and the first exposure area and the second exposure area are formed by the same photomask; Based on the first correspondence and the second correspondence, determine the target exposure position where the difference between the corresponding first alignment error and the corresponding second alignment error satisfies the preset anomaly judgment condition; In the first film layer, the area corresponding to the target exposure position is determined as the marked abnormal area.

6. The method according to claim 5, characterized in that, In the first film layer, determining the region corresponding to the target exposure position as the marked anomalous region includes: In the first direction of the first film layer, the width range corresponding to the target exposure position is determined as the width range of the marked abnormal region; In the first film layer, the length range of the marked abnormal region is determined in the second direction; wherein, the first direction is perpendicular to the exposure scanning direction, and the second direction is parallel to the exposure scanning direction; The marked abnormal region is determined on the first film layer based on the width range and the length range of the marked abnormal region.

7. The method according to claim 6, characterized in that, The preset anomaly determination conditions include: the difference between the first alignment error and the second alignment error is greater than the maximum allowable alignment error; the target exposure position includes multiple exposure positions within the first anomaly range; Based on the first correspondence and the second correspondence, the target exposure position where the difference between the corresponding first alignment error and the corresponding second alignment error satisfies the preset anomaly judgment condition is determined, including: Based on the first correspondence and the second correspondence, the exposure position range where the difference between the first alignment error and the second alignment error is greater than the maximum permissible alignment error is determined; the exposure position range is determined as the first abnormal range, where the difference between the first alignment error and the second alignment error at the exposure position within the first abnormal range is greater than the maximum permissible alignment error of the first film layer.

8. The method according to claim 7, characterized in that, Before determining the width range corresponding to the target exposure position in the first direction of the first film layer as the width range of the marked abnormal region, the method further includes: Obtain the process window information of the alignment mark of the first film layer; Determine the maximum permissible alignment error corresponding to the process window information, wherein the maximum permissible alignment error is positively correlated with the process window information.

9. The method according to claim 5, characterized in that, The preset anomaly determination condition includes: the difference between the first alignment error and the second alignment error of the target exposure position is the maximum value among the differences between the first alignment error and the second alignment error of each exposure position in the first exposure area; The step of determining the target exposure position where the difference between the corresponding first alignment error and the corresponding second alignment error satisfies the preset anomaly judgment condition based on the first correspondence and the second correspondence includes: Within the first exposure area, determine the exposure position corresponding to the maximum value of the difference between the first alignment error and the second alignment error; The exposure location is determined as the target exposure location; Identifying and marking anomalous regions in the first film layer includes: Determine a second width range centered on the target exposure location; The second width range is determined as the width range of the marked abnormal region.

10. The method according to claim 1, characterized in that, Before obtaining the deviation impact information of the lens performance deviation between the first machine and the second machine, the method further includes: For the first machine tool, perform at least one first lens performance deviation test to obtain at least one first correspondence. In each first lens performance deviation test, obtain the first alignment error of multiple alignment marks in a first exposure area formed by the first machine tool, wherein the first exposure area is distributed in the first film layer. A first correspondence is generated based on the obtained first alignment error of multiple alignment marks and the exposure position of the alignment marks. For the second machine tool, perform at least one second lens performance deviation test to obtain at least one second correspondence. In each second lens performance deviation test, obtain the second alignment error of multiple alignment marks in a second exposure area formed by the second machine tool, the second exposure area being distributed in the second film layer. A second correspondence is generated based on the obtained second alignment error of the multiple alignment marks and the exposure position of the alignment marks. Based on the at least one first correspondence and the at least one second correspondence, the deviation influence information is obtained, which is used to characterize the alignment error deviation of different machines at the same exposure position.

11. The method according to claim 2 or 3, characterized in that, After determining the marked abnormal region in the first film layer based on the deviation influence information, the method further includes: In the film layer of the first machine, determine the area to be exposed that corresponds to the marked abnormal area; When the first machine exposes to the area to be exposed, the exposure parameters of the first machine are compensated according to the marking weight of the alignment mark.

12. A device for detecting alignment error, characterized in that, include: An information acquisition module is used to acquire deviation impact information of lens performance deviation between a first machine and a second machine. The first machine is used to form a first film layer of a target wafer, and the second machine is used to form a second film layer of the target wafer. The deviation impact information is used to characterize the alignment error deviation of the alignment marks at different exposure positions on the first film layer caused by the lens performance deviation. The alignment error deviation is the difference in alignment error between the alignment marks at that exposure position on the first film layer and the alignment marks at that exposure position on the second film layer caused by the lens performance deviation between the lenses of the first machine and the second machine at the exposure position. The weight determination module is used to determine the label weights of each of the multiple alignment marks of the first film layer based on the deviation influence information, so as to determine the alignment error of the first film layer relative to the second film layer based on the alignment error values ​​corresponding to each of the multiple alignment marks and the label weights of the multiple alignment marks; wherein, the label weight of each alignment mark is inversely correlated with the alignment error deviation of each alignment mark due to the lens performance deviation. The weight determination module is further configured to determine a marking abnormal region in the first film layer based on the deviation influence information, wherein the marking abnormal region is caused by the lens performance deviation, resulting in a first alignment mark shifting by an alignment error; among the plurality of alignment marks, determine alignment marks in other non-marking abnormal regions as second alignment marks; assign a first marking weight to the first alignment mark, and assign a second marking weight to the second alignment mark, wherein the first marking weight is less than the second marking weight.

13. An electronic device, characterized in that, include: processor; as well as Memory for storing the executable instructions of the processor; The processor is configured to execute the alignment error detection method according to any one of claims 1-11 by executing the executable instructions.

14. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by the processor, it implements the alignment error detection method according to any one of claims 1-11.

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